NPN Silicon Darlington Transistors SMBTA 13

SMBTA 14

● High DC current gain

● High collector current
● Collector-emitter saturation voltage

Type Marking Ordering Code Pin Configuration Package1)

(tape and reel) 1 2 3
SMBTA 13 s1M Q68000-A6475 B E C SOT-23
SMBTA 14 s1N Q68000-A6476

Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 30 V
Collector-base voltage VCB0 30
Emitter-base voltage VEB0 10
Collector current IC 300 mA
Peak collector current ICM 500
Base current IB 100
Peak base current IBM 200
Total power dissipation, TS = 81 ˚C Ptot 330 mW
Junction temperature Tj 150 ˚C
Storage temperature range Tstg – 65 … + 150

Thermal Resistance
Junction - ambient2) Rth JA ≤ 280 K/W
Junction - soldering point Rth JS ≤ 210

1) For detailed information see chapter Package Outlines.

2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1 5.91

 SMBTA 13
SMBTA 14

Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.

DC characteristics
Collector-emitter breakdown voltage V(BR)CE0 30 – – V
IC = 10 µA
Collector-base breakdown voltage V(BR)CB0 30 – –
IC = 10 µA
Emitter-base breakdown voltage V(BR)EB0 10 – –
IE = 10 µA
Collector-base cutoff current ICB0 – – 100 nA
VCB = 30 V
Emitter-base cutoff current IEB0 – – 100
VEB = 10 V
DC current gain hFE –
IC = 10 mA, VCE = 5 V1) SMBTA 13 5000 – –
SMBTA 14 10000 – –
IC = 100 mA, VCE = 5 V1) SMBTA 13 10000 – –
SMBTA 14 20000 – –
Collector-emitter saturation voltage1) VCEsat – – 1.5 V
IC = 100 mA, IB = 0.1 mA
Base-emitter saturation voltage1) VBEsat – – 2
IC = 100 mA, IB = 0.1 mA

AC characteristics
Transition frequency fT 125 – – MHz
IC = 50 mA, VCE = 5 V, f = 20 MHz

1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group 2
 SMBTA 13
SMBTA 14

Total power dissipation Ptot = f (TA*; TS) Capacitance CCB0 = f (VCB0)

* Package mounted on epoxy CEB0 = f (VEB0)
f = 1 MHz

Permissible pulse load Ptot max / Ptot DC = f (tp) Transition frequency fT = f (IC)
VCE = 5 V, f = 20 MHz

Semiconductor Group 3
 SMBTA 13
SMBTA 14

Base-emitter saturation voltage Collector-emitter saturation voltage

IC = f (VBE sat) IC = f (VCE sat)
hFE = 1000 hFE = 1000

Collector cutoff current ICB0 = f (TA) DC current gain hFE = f (IC)

VCB = 30 V VCE = 5 V

Semiconductor Group 4