Course Code: ECE3002 Course Name: VLSI System Design Lab

Faculty In – Charge: Dr. G. LAKSHMI PRIYA Department: SENSE

Name of the Student: ARUN PRAKASH Registration Number: 19BEC1154
Experiment No.: 1 Date of Experiment: 04.08.2021
Name of the
CHARACTERISTICS OF NMOS TRANSISTOR
Experiment:

OBJECTIVE: To design and analyse the I – V Characteristics of NMOS

Transistor using 180nm and 45nm in LTspice.

TOOLS: LT Spice, TSMC 180nm/45nm and CMOS Technology

THEORY / FORMULA:

PROCEDURE:
CIRCUIT DIAGRAM – SCHEMATIC:
(A) INPUT TRANSFER CHARACTERISTICS:

(i) 180nm
(ii) 45 nm
(B) OUTPUT TRANSFER CHARACTERISTICS:

(i) 180 nm
(ii) 45 nm
OBSERVATION:
(A) PLOT OF INPUT TRANSFER CHARACTERISTICS:
(i) 180nm
(ii) 45 nm
TABULATION:

Technology Node VGS (V) VDS (V) ID (µA)

180nm 1.8 1.8 148
45nm 1.1 1.8 39

(B) PLOT OF OUTPUT CHARACTERISTICS:

(i) 180nm
(ii) 45 nm
TABULATION:
 Technology VGS (V) VDS (V) ID (µA)
Node
0.4 1.8 3.3
0.8 38
180nm 1.2 83
1.6 128
1.8 148
0.2 1.1 1.35
0.3 6.2
45nm 0.4 16
0.5 27
0.6 38

INFERENCE:
Characteristics of NMOS transistor were analyzed by visualizing the output
graphs of Id v/s Vgs and Id v/s Vds.
 In the cut off region,
Vgs < Vtn and ID=0.
 In the linear mode,
Vgs > Vtn, Vds < Vgs- Vtn,
ID = (μ*Cox*W/L) *(Vgs-Vtn) * Vds – V2 /2]
ds

we can approximate the value of Vtn =0.4V

 In the saturation mode,
Vgs > Vtn

Vds ≥ Vgs – Vtn,

ID= 1/2 * (μ * Cox * W/L) * [Vgs – Vtn]2
Approximating from ID v/s Vds graph, saturation starts roughly when Vds
=140V.