HAT2050T

Silicon N Channel Power MOS FET

High Speed Power Switching

ADE-208-660A (Z)
2nd. Edition
February 1999

Features

• Low on-resistance
• Capable of 4 V gate drive
• Low drive current
• High density mounting

Outline

TSSOP–8

65
87

34
1 8 12
D D

4 5
G G

1, 8 Drain
S S S S 2, 3, 6, 7 Source
2 3 6 7
4, 5 Gate
MOS1 MOS2
HAT2050T

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit
Drain to source voltage VDSS 100 V
Gate to source voltage VGSS ± 20 V
Drain current ID 1 A
Note1
Drain peak current I D(pulse) 4 A
Body-drain diode reverse drain current I DR 1 A
Note2
Channel dissipation Pch 1.0 W
Note3
Channel dissipation Pch 1.5 W
Channel temperature Tch 150 °C
Storage temperature Tstg – 55 to + 150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 100 — — V I D = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ± 20 — — V I G = ± 100 µA, VDS = 0
Gate to source leak current I GSS — — ± 10 µA VGS = ± 16 V, VDS = 0
Zero gate voltege drain current I DSS — — 1 µA VDS = 100 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.3 — 2.3 V VDS = 10 V, I D = 1 mA
Static drain to source on state RDS(on) — 0.56 0.75 Ω I D = 0.5 A, VGS = 10 V Note4
resistance RDS(on) — 0.72 1.0 Ω I D = 0.5 A, VGS = 4 V Note4
Forward transfer admittance |yfs| 0.7 1.1 — S I D = 0.5 A, VDS = 10 V Note4
Input capacitance Ciss — 90 — pF VDS = 10 V
Output capacitance Coss — 42 — pF VGS = 0
Reverse transfer capacitance Crss — 20 — pF f = 1MHz
Turn-on delay time t d(on) — 11 — ns VGS = 4 V, ID = 0.5 A
Rise time tr — 24 — ns VDD ≅ 10 V
Turn-off delay time t d(off) — 14 — ns
Fall time tf — 11 — ns
Body–drain diode forward voltage VDF — 0.84 1.1 V I F = 1 A, VGS = 0 Note4
Body–drain diode reverse t rr — 85 — ns I F = 1 A, VGS = 0
recovery time diF/ dt = 20 A/µs
Note: 4. Pulse test

2
 HAT2050T

Main Characteristics

Power vs. Temperature Derating Maximum Safe Operation Area

2.0 10
Test Condition : 10 µs
When using the glass epoxy board 3 10
Pch (W)

0
µs

I D (A)
(FR4 40x40x1.6 mm), PW < 10 s
1.5 1 DC 1
PW m
Op s
er =
0.3 ati 10
on m
s

Drain Current
Channel Dissipation

(P
2

1.0 0.1 W
Dr

Operation in No
<
10 te5
ive

1 this area is s)
Op

Dr 0.03
limited by R DS(on)
er

ive
at

0.5 Op 0.01
ion

er
at Ta = 25°C
ion 0.003 1 shot Pulse
1 Drive Operation
0.001
0 50 100 150 200 0.2 1 3 10 30 100 200
Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V)

Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)

Typical Output Characteristics Typical Transfer Characteristics

5 5
Pulse Test
8V
4 10V 4
(A)
I D (A)

5V
–25°C
ID

3 6V 4.0 V 3 Tc = 75°C
25°C
Drain Current

Drain Current

2 2
3.0 V
1 1
VGS = 2.5 V V DS = 10 V
Pulse Test
0 2 4 6 8 10 0 2 4 6 8 10
Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V)

3
HAT2050T

Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance
Gate to Source Voltage vs. Drain Current
2.0 20

Drain to Source On State Resistance

R DS(on) ( Ω )
Pulse Test Pulse Test
Drain to Source Saturation Voltage
V DS(on) (V)

10
1.6

ID=2A 5

1.2
2
4V
0.8
1
1A
VGS = 10 V
0.4 0.5

0.5 A
0.2
0 2 4 6 8 10 0.2 0.5 1 2 5 10 20
Gate to Source Voltage V GS (V) Drain Current I D (A)

Static Drain to Source on State Resistance Forward Transfer Admittance vs.

vs. Temperature Drain Current
Static Drain to Source on State Resistance

2.0 5
Forward Transfer Admittance |y fs | (S)
R DS(on) (Ω )

1.6 ID = 2 A 2
Tc = –25 °C
1
1.2 1, 0.5 A

0.5
75 °C
2A
0.8
25 °C
1, 0.5 A 0.2

0.4 4V
0.1 V DS = 10 V
VGS = 2.5 V Pulse Test Pulse Test
0 0.05
–40 0 40 80 120 160 0.02 0.05 0.1 0.2 0.5 1 2
Case Temperature Tc (°C) Drain Current I D (A)

4
 HAT2050T

Body–Drain Diode Reverse Typical Capacitance vs.

Recovery Time Drain to Source Voltage
500 1000
VGS = 0
Reverse Recovery Time trr (ns)

f = 1 MHz
200 300

Capacitance C (pF)
100 100 Ciss

50 30 Coss

10
20
Crss
10 3
di/dt = 20 A/µs
V GS = 0, Ta = 25°C
5 1
0.1 0.2 0.5 1 2 5 10 0 10 20 30 40 50
Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V)

Dynamic Input Characteristics Switching Characteristics

50 10 100
V DS (V)

V GS = 4 V, V DD = 10 V
I D= 1 A
V GS (V)

PW = 5 µs, duty < 1 %

50
40 8
Switching Time t (ns)

V DD = 5 V
10 V V GS t d(off)
20
Drain to Source Voltage

20 V
30 6
Gate to Source Voltage

t d(on)
10 tf
V DS tr
20 4
5

10 V DD = 20 V 2
10 V 2
5V
0 1
0 0.8 1.6 2.4 3.2 4.0 0.01 0.02 0.05 0.1 0.2 0.5 1
Gate Charge Qg (nc) Drain Current I D (A)

5
HAT2050T

Reverse Drain Current vs.

Souece to Drain Voltage
5
Pulse Test

Reverse Drain Current I DR (A)

4

5V V GS = 0
1

0 0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V SD (V)

Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)

10
γ s (t)
Normalized Transient Thermal Impedance

D=1
1
0.5
0.2
0.1
0.1
0.05
0.02
θ ch – f(t) = γ s (t) • θ ch – f
0.01 θ ch – f = 166 °C/W, Ta = 25 °C
0.01 e
puls When using the glass epoxy board
h ot (FR4 40x40x1.6 mm)
1s
PDM PW
0.001 D=
T
PW
T
0.0001
10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 10000
Pulse Width PW (S)

6
 HAT2050T

Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)

10
γ s (t)
Normalized Transient Thermal Impedance

D=1
1
0.5
0.2
0.1
0.1
0.05
0.02
θ ch – f(t) = γ s (t) • θ ch – f
0.01 θ ch – f = 210 °C/W, Ta = 25 °C
0.01 When using the glass epoxy board
lse (FR4 40x40x1.6 mm)
t pu
ho PW
0.001 1s PDM D=
T
PW
T
0.0001
10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 10000

Pulse Width PW (S)

Switching Time Test Circuit Switching Time Waveform

Vin Monitor Vout

Monitor
90%
D.U.T.
RL
Vin 10%

Vin V DD Vout 10%

50Ω 10%
4V = 10 V

90% 90%

td(on) tr td(off) tf

7
HAT2050T

Package Dimensions

Unit: mm

3.00 ± 0.1

8 5

4.40 ± 0.1

1 4
1.10 Max

6.40 ± 0.20

0–8°
0.65
0.07 +0.03
–0.04
0.17 ± 0.05

0.10 0.50 ± 0.10

+0.08
0.22 –0.07
0.13 M
Hitachi Code TTP–8D
EIAJ Code —
JEDEC Code —

8
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.