HAT2198R

Silicon N Channel Power MOS FET

Power Switching
REJ03G0062-0200
Rev.2.00
Oct.18.2004

Features
• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 7.2 mΩ typ. (at VGS = 10 V)

Outline

SOP-8
5 6 7 8
D D D D

65
7
4 8 1, 2, 3 Source
G 4 Gate
3
4 5, 6, 7, 8 Drain
1 2

S S S
1 2 3

Absolute Maximum Ratings

(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 30 V
Gate to source voltage VGSS ±20 V
Drain current ID 14 A
Drain peak current ID(pulse)Note1 112 A
Body-drain diode reverse drain current IDR 14 A
Note 2
Avalanche current IAP 14 A
Avalanche energy EAR Note 2 19.6 mJ
Channel dissipation Pch Note3 2.5 W
Channel to ambient thermal impedance θch-a Note3 50 °C/W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s

Rev.2.00, Oct.18.2004, page 1 of 7

HAT2198R

Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 30 — — V ID = 10 mA, VGS = 0
Gate to source leak current IGSS — — ± 0.1 µA VGS = ±20 V, VDS = 0
Zero gate voltage drain current IDSS — — 1 µA VDS = 30 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V VDS = 10 V, I D = 1 mA
Static drain to source on state RDS(on) — 7.2 9.0 mΩ ID = 7 A, VGS = 10 V Note4
resistance RDS(on) — 9.6 14.0 mΩ ID = 7 A, VGS = 4.5 V Note4
Forward transfer admittance |yfs| 18 30 — S ID = 7 A, VDS = 10 V Note4
Input capacitance Ciss — 1650 — pF VDS = 10 V
Output capacitance Coss — 390 — pF VGS = 0
Reverse transfer capacitance Crss — 135 — pF f = 1 MHz
Gate Resistance Rg — 0.55 — Ω
Total gate charge Qg — 11 — nC VDD = 10 V
Gate to source charge Qgs — 4.7 — nC VGS = 4.5 V
Gate to drain charge Qgd — 2.5 — nC ID = 14 A
Turn-on delay time td(on) — 8.5 — ns VGS = 10 V, ID = 7 A
Rise time tr — 5 — ns VDD ≅ 10 V
Turn-off delay time td(off) — 38 — ns RL = 1.42 Ω
Rg = 4.7 Ω
Fall time tf — 3.8 — ns
Body–drain diode forward voltage VDF — 0.80 1.04 V IF = 14 A, VGS = 0 Note4
Body–drain diode reverse recovery trr — 28 — ns IF = 14 A, VGS = 0
time diF/ dt = 100 A/ µs
Notes: 4. Pulse test

Rev.2.00, Oct.18.2004, page 2 of 7

HAT2198R

Main Characteristics

Power vs. Temperature Derating Maximum Safe Operation Area

4.0 500
Test Condition : 10
When using the glass epoxy board µs
Pch (W)
100

ID (A)
(FR4 40 x 40 x 1.6 mm), PW < 10 s 10
3.0 0µ
1m s
DC PW s
10 Op =1
era 0m

Drain Current
Channel Dissipation

tio s
n(
2.0 PW
1 < 1Note
Operation in 0s 5
)
this area is
1.0 limited by RDS(on)
0.1
Ta = 25°C
1 shot Pulse
0.01
0 50 100 150 200 0.1 0.3 1 3 10 30 100
Ambient Temperature Ta (°C) Drain to Source Voltage VDS (V)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)

Typical Output Characteristics Typical Transfer Characteristics

20 20
10 V Pulse Test VDS = 10 V
3V 2.8 V Pulse Test
16 16
ID (A)

ID (A)

12 12
Drain Current

2.6 V
Drain Current

Tc = 75°C
8 8

VGS = 2.4 V 25°C

4 4
–25°C

0 2 4 6 8 10 0 1 2 3 4 5
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)

Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance
Gate to Source Voltage vs. Drain Current
VDS(on) (mV)

300 100
Drain to Source On State Resistance

Pulse Test Pulse Test

VDS(on) (mΩ)

50
240
V GS = 4.5 V
20
180
Drain to Source Voltage

ID = 20 A
10
10 V
120
5
10 A
60
5A 2

1
0 4 8 12 16 20 1 10 100 1000
Gate to Source Voltage VGS (V) Drain Current ID (A)

Rev.2.00, Oct.18.2004, page 3 of 7

HAT2198R

Static Drain to Source on State Resistance Forward Transfer Admittance vs.

vs. Temperature Drain Current
20 1000
Static Drain to Source on State Resistance
RDS(on) (mΩ)

Forward Transfer Admittance |yfs| (S)

Pulse Test
20 A
16 Tc = –25°C
I = 5 A, 10 A
D 100

12 V
GS = 4.5 V
10
8 25°C
5 A, 10 A, 20 A
1 75°C
10 V
4
VDS = 10 V
Pulse Test
0
-25 0 25 50 75 100 125 150 0.1 0.3 1 3 10 30 100
Case Temperature Tc (°C) Drain Current ID (A)

Body–Drain Diode Reverse Typical Capacitance vs.

Recovery Time Drain to Source Voltage
100 10000
Reverse Recovery Time trr (ns)

3000
Ciss
Capacitance C (pF)

50
1000

Coss
300

Crss
20 100

di/dt = 100 A/µs 30 VGS = 0

VGS = 0, Ta = 25°C f = 1 MHz
10 10
0.1 1 10 100 0 5 10 15 20 25 30
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)

Dynamic Input Characteristics Switching Characteristics

50 20 1000
VDS (V)

ID = 14 A VGS = 10 V, VDS = 10 V
V GS (V)

Rg = 4.7 Ω, duty < 1 %

40 VGS 16
Switching Time t (ns)

VDD = 25 V
100
Drain to Source Voltage

10 V
Gate to Source Voltage

30 5V 12 t d(off)
VDS
tr
20 8 t d(on)
10
VDD = 25 V
10 10 V 4
5V tf
0 1
0 8 16 24 32 40 0.1 1 10 100
Gate Charge Qg (nc) Drain Current ID (A)

Rev.2.00, Oct.18.2004, page 4 of 7

HAT2198R

Reverse Drain Current vs. Maximum Avalanche Energy vs.

Source to Drain Voltage Channel Temperature Derating
20

Repetitive Avalanche Energy EAR (mJ)

20
IAP = 11 A
(A) 10 V VDD = 15 V
16 16
Reverse Drain Current IDR
duty < 0.1 %
5V Rg > 50 Ω
12 VGS = 0,-5 V 12

8 8

4 4

Pulse Test
0
0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150
Source to Drain Voltage VSD (V) Channel Temperature Tch (°C)

Normalized Transient Thermal Impedance vs. Pulse Width

10
Normalized Transient Thermal Impedance
γs (t)

D=1
1

0.5
0.2
0.1
0.1
0.05
θch - f(t) = γs (t) x θch - f
0.02 θch - f = 83.3°C/W, Ta = 25°C
0.01
0.01 When using the glass epoxy board
lse (FR4 40 x 40 x 1.6 mm)
t pu
ho PW
0.001 1s PDM D=
T
PW
T
0.0001
10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 10000
Pulse Width PW (s)

Rev.2.00, Oct.18.2004, page 5 of 7

HAT2198R

Avalanche Test Circuit Avalanche Waveform

1 VDSS
EAR = L • IAP2 •
L 2 VDSS - V DD
V DS
Monitor
I AP V (BR)DSS
Monitor
I AP
Rg D. U. T VDD V DS
ID
Vin 50Ω
15 V
VDD
0

Switching Time Test Circuit Switching Time Waveform

Vin Monitor Vout 90%

Monitor
D.U.T.
Rg RL Vin 10%

Vout 10% 10%

Vin V DS
10 V = 10 V
90% 90%

td(on) tr td(off) tf

Rev.2.00, Oct.18.2004, page 6 of 7

HAT2198R

Package Dimensions

As of January, 2003
Unit: mm
4.90
5.3 Max
8 5

3.95
1 4

*0.22 ± 0.03
0.20 ± 0.03
1.75 Max
+ 0.10
6.10 – 0.30
0.75 Max
1.08

0˚ – 8˚

+ 0.11
0.14 – 0.04
+ 0.67
1.27 0.60 – 0.20

*0.42 ± 0.08
0.40 ± 0.06
0.15

0.25 M
Package Code FP-8DA
JEDEC Conforms
*Dimension including the plating thickness JEITA —
Base material dimension Mass (reference value) 0.085 g

Ordering Information
Part Name Quantity Shipping Container
HAT2198R-EL-E 2500 pcs Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.

Rev.2.00, Oct.18.2004, page 7 of 7

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