ST 2N2222 / 2N2222A

NPN Silicon Epitaxial Planar Transistor

for switching and AF amplifier applications.

The transistor is subdivided into one group

according to its DC current gain. As complementary
type the PNP transistor ST 2N2907 and ST
2N2907A are recommended.

On special request, these transistors can be

manufactured in different pin configurations.

TO-92 Plastic Package

Weight approx. 0.19g

Absolute Maximum Ratings (Ta = 25 OC)

Symbol Value Unit

ST 2N2222 ST 2N2222A
Collector Base Voltage VCBO 60 75 V
Collector Emitter Voltage VCEO 30 40 V
Emitter Base Voltage VEBO 5 6 V
Collector Current IC 600 mA
Power Dissipation Ptot 625 mW
Junction Temperature Tj 150 O
C
Storage Temperature Range TS -55 to +150 O
C

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 05/10/2005
ST 2N2222 / 2N2222A

Characteristics at Tamb=25 OC

Symbol Min. Typ. Max. Unit

DC Current Gain
at IC=0.1mA, VCE=10V hFE 35 - - -
at IC=1mA, VCE=10V hFE 50 - - -
at IC=10mA, VCE=10V hFE 75 - - -
at IC=150mA, VCE=10V hFE 100 - 300 -
at IC=500mA, VCE=10V ST 2N2222 hFE 30 - - -
ST 2N2222A hFE 40 - - -
Collector Cutoff Current
at VCB=50V ST 2N2222 ICBO - - 0.01 µA
at VCB=60V ST 2N2222A ICBO - - 0.01 µA
Collector Base Breakdown Voltage
at IC=10µA ST 2N2222 V(BR)CBO 60 - - V
ST 2N2222A V(BR)CBO 75 - - V
Collector Emitter Breakdown Voltage
at IC=10mA ST 2N2222 V(BR)CEO 30 - - V
ST 2N2222A V(BR)CEO 40 - - V
Emitter Base Breakdown Voltage
at IE=10µA ST 2N2222 V(BR)EBO 5 - - V
ST 2N2222A V(BR)EBO 6 - - V
Collector Saturation Voltage
at IC=150mA, IB=15mA ST 2N2222 VCE(sat) - - 0.4 V
ST 2N2222A VCE(sat) - - 0.3 V
at IC=500mA, IB=50mA ST 2N2222 VCE(sat) - - 1.6 V
ST 2N2222A VCE(sat) - - 1 V
Base Saturation Voltage
at IC=150mA, IB=15mA ST 2N2222 VBE(sat) - - 1.3 V
ST 2N2222A VBE(sat) 0.6 - 1.2 V
at IC=500mA, IB=50mA ST 2N2222 VBE(sat) - - 2.6 V
ST 2N2222A VBE(sat) - - 2.0 V
Gain Bandwidth Product
fT 250 - - MHz
at IC=20mA, VCE=20V, f=100MHz
Collector Output Capacitance
Cob - - 8 pF
at VCB=10V, f=1MHz
Input Capacitance
Cib - - 30 pF
at VCB=0.5V, f=1MHz

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 05/10/2005
 ST 2N2222 / 2N2222A

Figure 1. DC Current Gain

1000
700
o
500 TJ=125 C
h FE , DC CURRENT GAIN

300
200
25o C
100

70
-55o C
50
30 VCE=1.0V
VCE=10V
20

10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0 K

I C, COLLECTOR CURENT (mA)

Figure 2. Collector Saturetion Region

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.0
TJ= 25o C

0.8

0.6
I C=1.0mA 10mA 150mA 500mA

0.4

0.2

0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50

I B, BASE CURENT (mA)

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 05/10/2005
ST 2N2222 / 2N2222A

Figure 3. Capacitances Figure 4. Current-Gain Bandwidth Product

f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)

30 500
VCE=20V
20 TJ = 25o C
300

Ceb
200
10

7.0

5.0 100

Ccb
70
3.0

2.0 50
0.1 0.2 0.3 0.5 0.71.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

REVERSE VOLTAGE (VOLTS) I C, COLLECTOR CURRENT (mA)

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 05/10/2005