ELECTRONICS DEVICES AND CIRCUIT 2(TTA)

INSTRUCTIONS-
1.NUMBER OF QUESTIONS 25
2.HAS A TIME LIMIT OF 15 MINUTES
3.HAS A PASS MARKS OF 30%
4.QUESTIONS PER PAGE 1
5.EACH QUESTIONS HAS 1 MARKS
6.NEGATIVE MARKING FOR EACH QUESTIONS IS 0.25
7.WILL ALLOW TO YOU GO BACK ,SKIP AND CHANGE YOUR ANSWERS
8.WILL ALLOW TO YOU PRINT OUT YOUR RESULT AND CERTIFICATE
9.WILL ALLOW TO YOU PRINT OUT YOURS RESPONSE SHEET WITH
CORRECT ANSWER KEY AND EXPLANATION
.
Max Time Al lowed: 15 mi n

Q.1) A general propose diode is more likely to suffer an av alanche breakdown rather than a Zener
breakdown because
A. It has weak covalent bonds

B. It is lightly doped

C. It is heavily doped

D. None of the above

Q.2) .No-load voltage of power supply is 100 V and full-load v oltage is 80 V, the percentage of
regulation is
A. 0

B. 25

C. 15.75

D. none of above

Q.3) which circuit of transistor is known as emitter follower

A. CC

B. ALL

C. CE

D. CB

Q.4) The Zener effect is valid approximately

A. Above 5 V

B. Equal to 5 V

C. None of the above

D. Below 5 V

Q.5) Silicon diode is less suited for low v oltage rectifier operation because
A. Its reverse saturation current is low

B. None of the above

C. Its cut-in voltage is high

D. Its breakdown voltage is high

Q.6) Varactor diodes are used in FM receiv ers to obtain

A. Automatic frequency control

B. Automatic gain control

C. None of the above

D. Automatic volume control

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 Q.7) Zener diode
A. Has a sharp breakdown at low reverse voltage

B. Is useful as an amplifier

C. Has a high forward voltage rating

D. None of the above

Q.8) Silicon is not suitable for fabrication of light-emitting diodes because it is

A. A direct band gap semiconductor

B. An indirect band gap semiconductor

C. A wide band gap semiconductor

D. None of the above

Q.9) A Zener diode is based on the principle of

A. Tunneling of charge carriers across the junction

B. Diffusion of charge carriers across the junction

C. None of the above

NONE OF T HESE
D. T hermionic emission

Q.10) The disadvantages of capacitor input LC filter are

A. none of these

B. High cost, more weight and external field produced by a series inductor

C. Low cost, more weight

D. High cost, less weight

Q.11) .The clipping action of a diode requires that its forward resistance
A. Have a finite value

B. None of the above

none of these
C. Be zero

D. Be infinite

Q.12) For a low voltage rectification

A. Bridge rectifier is suitable

B. Two diode full-wave rectifier is suitable

C. Both bridge and full-wave rectifier are suitable

None of the above
D.
none of these

Q.13) .The most significant component of ripple v oltage in a half-wave rectifier is contained in
A. None of the above
none of these
B. Fundamental frequency

C. Second harmonic

D. DC component

Q.14) A Zener diode

A. None of the above

B. Is useful as an amplifier

C. Has a high forward voltage rating

D. Has a sharp breakdown at low reverse voltage

Q.15) The LED is usually made of materials like

A. none of these

B. GaAs

C. C and Si

D. GeAs

Q.16) Diode transition or space capacitance is due to

A. storage of minority charge

B. majority carrier moves from junction

C. both

D. none of these

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 Q.17) Zener diodes are used as
A. Reference voltage elements

B. Reference current elements

C. Reference resistance

D. none of these

Q.18) Which rectifier requires four diodes?

A. Half-wave voltage doubler

B. None of the above

C. Full-wave bridge circuit

D. Full-wave voltage doubler

Q.19) Which of these is a best description of a Zener diode?

A. It operates in the reverse region

B. It is a constant voltage device

C. It is a constant current device

D. All of the above

Q.20) .If the junction temperature of LED is increased the radiant output power
A. Increases

B. Decreases

C. Remains the same

D. None of the above

none of these

Q.21) Larger the v alue of the capacitor filter

A. none

B. Longer the time that current pulse flows through the diode

C. Larger the peak current in the rectifying diode

D. Smaller the dc voltage across the load

Q.22) When two Zener diodes each of 10 V and 15 V are connected in series, then the overall voltage
between them when they are in conduction is
A. 10 V

B. Zero

C. 25 V

D. 15 V

Q.23) If Vm is the peak value of an applied voltage in a half-wave rectifier with a large capacitor across
the load, then PIV is
A. Vm

B. Vm/2

C. none of these

D. 2Vm

Q.24) When a diode is forward-biased, the recombination of free electron and holes may produce
A. Heat

B. Radiation

C. All of the above

D. Light

Q.25) Zener diodes are

A. None of the above

B. Normally doped p-n junctions

C. Specially doped p-n junctions

D. Lightly doped p-n junctions

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 Answer Key
Q.1) It is lightly doped
Q.2) 25
Q.3) CC
Q.4) Below 5 V
Q.5) Its cut-in voltage is high
Q.6) Automatic frequency control
Q.7) Has a sharp breakdown at low reverse voltage
Q.8) An indirect band gap semiconductor
Q.9) Tunneling of charge carriers across the junction
Q.10) High cost, more weight and external field produced by a series inductor
Q.11) Be zero
Q.12) Two diode full-wave rectifier is suitable
Q.13) Fundamental frequency
Q.14) Has a sharp breakdown at low reverse voltage
Q.15) GaAs
Q.16) majority carrier moves from junction
Q.17) Reference voltage elements
Q.18) Half-wave voltage doubler
Q.19) It is a constant voltage device
Q.20) Decreases
Q.21) Larger the peak current in the rectifying diode
Q.22) 15 V
Q.23) 2Vm
Q.24) All of the above
Q.25) Specially doped p-n junctions

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