Modeling Guidelines for Very Fast Transients
in Gas Insulated Substations
Report Prepared by the Very Fast Transients Task Force
of the IEEE Working Group on Modeling and Analysis of System Transients
Contributing Members: J.A. Martinez (Co-chairman), D. Povh (Co-chairman), P. Chowdhuri, R.
Iravani, A. J.F. Keri
Abstract- This document is aimed at providing modeling guidelines
for digital simulation of very fast transients (VFT) in gas insulated
substations (GIS). A short explanation about the origin of VFT
overvoltages, their propagation and effects on GIS equipment is
included. The document presents modeling guidelines of GIS
components proposed in some previous works. The accuracy of
digital computations using these guidelinesis also discussed. Several
examples corresponding to actual cases with detailed data input
and validated simulation results are presented.
Keywords: Gas Insulated Substations, Very Fast Transients,
Modeling, Digital Simulation.
1. INTRODUCTION
An accurate representation of each component of a system is
essential for a reliable simulation of its transient performance,
This representation must be done taking into account the
frequency range of the transients to be simulated. Very Fast
Transients (VFT) belong to the highest frequency range of
transients in power systems. Component models to be used in
VFT simulations must be suitable for frequencies varying from
100 kHz up to 50 MHz [21].
VFT arise within a gas-insulated substation (GIS) any time there
is an instantaneous change in voltage. Most often this change
occurs as the result of the opening or closing of a disconnect
switch, but other events, such as the operation of a circuit
breaker, the closing of a grounding switch, or the occurrence of
a fault, can also cause VFT. These transients generally have a
very short rise time, in the range of 4 to 100 ns, and are
normally followed by oscillations having frequencies in the
range of 1 to 50 MHz. Their magnitude is in the range of 1.5 to
2.0 per unit ofthe line-to-neutral voltage crest, but they can also
reach values as high as 2.5 per unit. These values are generally
below the BIL of the GIS and connected equipment of lower
voltage classes. VFT in GIS are of greater concern at the
highest voltages, for which the ratio of the BIL to the system
voltage is lower. Some equipment failures and arcing problems
between grounded parts have occurred at system voltages above
420 kV, they have been correlated with disconnect switch and
6-1
circuit breaker operation.
The generation and propagation of VFT from their original
location throughout a GIS can produce internal and external
overvoltages. The main concern are internal overvoltages
between the center conductor and the enclosure. However,
external VFT can be dangerous for secondary and adjacent
equipment. These external transients include transient voltages
between the enclosure and ground at GIS-air interfaces,
voltages across insulating spacers in the vicinity of GIS current
transformers, when they do not have a metallic screen on the
outside surface, voltages on the secondary terminals of GIS
instrument transformers, radiated electromagnetic fields (EMF)
which can be dangerous to adjacent control or relay equipment.
VFT can also occur during switching of vacuum breakers and
with certain lightning conditions. The objective of this
document is to present an explanation of the VFT phenomena
that can occur in GIS and provide guidelines for representing
GIS components in digital simulations. Some examples with
detailed input data are presented. A discussion about the
accuracy of the simulations and their verification with field
measurements is also included.
2. BACKGROUND
2.1 ORIGINOF VFTIN GIS
VFT overvoltages are generated in a GIS during disconnector
or breaker operations, or by line-to-ground faults. During a
disconnector operation a number of pre- or restrikes occur due
to the relatively slow speed of the moving contact. Figure 1
shows the simplified configuration used to explain the general
switching behavior and the pattern of voltages on closing and
opening ofa disconnector at a capacitive load [4], [17].
During closing, as the contacts approach, the electric field
between them will rise until sparking occurs. The first strike
will almost inevitably occur at the crest of the power frequency
voltage, due to the slow operating speed. Thereafter current will
flow through the spark and charge the capacitive load to the
source voltage. As it does so, the potential difference across the
contacts falls and the spark will eventually extinguish. The
behavior on opening is very nearly a complete reversal of the
above description.
In case ofa line-to-ground fault, the voltage collapse at the fault
location occurs in a similar way as in the disconnector gap
during striking. Step-shaped travelling surges are generated and
injected to GIS lines connected to the collapse location. The rise
time of these surges depend on the voltage preceding the
collapse.
2.2 PROPAGATION OF VFT IN GIS
VFT in GIS can be divided into internal and external. Internal
transients can produce overvoltages between inner conductors
and the encapsulation, external transients can cause stress on
secondary and adjacent equipment. A summary about the
propagation and main characteristics of both types of
phenomena follows.
2.2.1 Internal transients
Breakdown phenomena across the contacts of a disconnector
during a switch operation or line-to-ground faults generate very
short rise time travelling waves which propagate in either
direction from the breakdown or fault location. Surges travelling
throughout GIS and to other connected equipment are reflected
and refracted at every transition point. As a consequence of
multiple reflections and refractions, travelling voltages can
increase above the original values and very high frequency
oscillations occur.
The propagation of VFT throughout GIS can be analyzed by
representing GIS sections as low-loss distributed parameter
transmission lines. Each section may be characterized by a surge
impedance and a transit time. Travelling waves are reflected and
refracted at every point where they encounter a change in the
surge impedance. The generated transients depend on the GIS
configuration and on the superposition of the surges reflected
and refracted on line discontinuities like breakers, "T" junctions
or bushings. The main frequencies depend on the length of the
GIS sections affected by the disconnector operation and are in
the range of 1 to 50 MHz.
The internal damping of the VFT influencing the highest
frequency components is determined by the spark resistance.
Skin effects due to the aluminum enclosure can be neglected.
The main portion of the damping of the VFT occurs by
outcoupling at the transition to the overhead line.
6-2
In case of power transformers feeding the GIS, overall
transients with frequencies in the range of 20 to 100 kHz can be
observed caused by the oscillation of the whole system
consisting of the GIS and the transformer,
Due to the travelling wave behavior of the VFT, the
overvoltages caused by disconnector switches show a spatial
distribution. Normally the highest overvoltage stress is reached
at the open end of the load side. The maximum value of the
local VFT overvoltages is dependent on the voltage drop at the
disconnectorjust before striking and on the location considered.
For the calculation of VFT stresses, the trapped charge
remaining on the load side of the disconnector must be taken
into consideration. For a normal disconnector with a slow
speed, the maximwn trapped charge reaches 0.5 pu resulting in
a most unfavorable voltage collapse of 1.5 pu. For these cases,
the resulting overvoltages are in the range of 1.7 pu and reach
2.0 pu for very specific cases. For a high speed disconnector,
the maximwn trapped charge could be 1.0 pu and the highest
overvoltages reach values up to 2.5 pu. Extremely high values
of more than 3.0 pu have been reported. It can be shown,
however, that these values have been derived by calculation
using unrealistic simplified simulation models.
An example ofthese transient phenomena measured in an actual
GIS is given in Figure 2, where one prestrike of a disconnector
switching is depicted showing the steep voltage transients at the
supply and load sides. The basic frequency component of the
VFT in the MHz range, the overall transient and the steady state
waveform are also shown.
The two following examples will be useful to illustrate the
generation of VFT in GIS, and the influence of some
parameters on the frequency and maximum values of these
transients. Figure 3 shows a very simple case, a GIS bus duct
represented as a lossless distributed parameter transmission line
is fed from a step-shaped source. The reflections of the
travelling wave at both terminals ofthe duct will produce at the
open terminal a pulse-shaped transient of constant magnitude -
2 pu - and constant frequency. The frequency of this pulse can
be calculated from the following expression
1
f
4 1 (1)
being t the transit time ofthe line. If the propagation velocity is
close to that of light, the frequency, in MHz, of the voltage
generated at the open terminal will be

75
f
d (2)
where d is the duct length, in meters. In this case, d = 12 m, then
the frequency is 6.25 MHz, which corresponds to a period of
160 ns, as shown in Figure 3.b. Therefore, the main reason why
VFT are generated in GIS is due to the short length of ducts.
Each GIS section, represented as a lossless distributed
parameter transmission line, may be characterized by a surge
impedance and a transit time. In the previous case, the surge
impedance of the bus was 50 Q; however, this value was
unimportant because the supplying source was assumed ideal.
Figure 3.b shows the simulation result obtained with a more
realistic representation of the source, R = 10 Q. One can
observe than now the frequency is still the same, but the
maximum overvoltage at the open terminal is lower than 2 pu,
and the transient is damped. At the end, the voltage value at this
terminal is equal to that of the source. The equivalent
impedance at the source side ofan actual GIS disconnector will
be different from a pure resistance; this representation has be
considered here to facilitate the introduction to VFT generation.
As mentioned above, trapped charge remaining on the load side
of a disconnector must be taken into consideration. Figure 3.c
shows that the voltage at the open terminal can reach 3 pu ifthe
transient is started with a 1 pu trapped charge on the
transmission line. This increase is due to the fact that now the
travelling wave is a 2 pu step, which duplicates at the open
terminal; the fmal 3 pu value is the result of subtracting the
remaining trapped charge. A more accurate simulation should
assume that the equivalent impedance at the source side is not
negligible and a lower trapped charge. The second plot of
Figure 3.c depicts the new results with a non-zero source
resistance and a lower trapped charge.
Maximum voltages can reach higher values in more complex
GIS configurations. Figure 3 shows a "T" junction GIS
network. The simulations performed with the previous case
were repeated with this new configuration. All bus ducts had the
same surge impedance - 50 Q - and the same propagation
velocity, that of light. The simulations show that node 4 in
Figure 4.a is the open terminal where overvoltages are higher.
From the new plots one can deduce that VFT as higher as 4.5 pu
can be generated; however, as with the previous case, a realistic
simulation cannot neglect the source impedance. In addition, the
value of the trapped charge has to be accurately evaluated as it
will have an important influence on the maximum generated
overvoltage; the second plot of Figure 4.c was obtained
assuming' that the trapped charge was 0.5 pu.
6-3
2.2.2Externaltransients
An internally generated VFT propagates throughout the GIS
and reaches the bushing where it causes a transient enclosure
voltage and a travelling wave that propagates along the
overhead transmission line. An explanation about the generation
of external transients and some comments on their main
characteristics follow.
a) Transient enclosure voltages
Transient enclosure voltages (TEV), also known as transient
ground potential rise (TGPR), are short duration high voltage
transients which appear on the enclosure ofthe GIS through the
coupling of internal transients to enclosure at enclosure
discontinuities. The usual location for these voltages is the
transition GIS-overhead line at an air bushing, although they
can also emerge at other points such as visual inspection ports,
insulated spacers for C'l's or insulated flanges at GIS/cables
interfaces. The simplified circuit shown in Figure 5 will be used
to explain the generation ofTEV [20].
At the GIS-air interface three transmission lines can be
distinguished : the coaxial GIS transmission line, the
transmission line formed by the bushing conductor and the
overhead line, the GIS enclosure-to-ground transmission line.
Each ofthem has a different surge impedance. When an internal
wave propagates to the gas-to-air bushing, a portion of the
transient is coupled onto the overhead line-to-ground
transmission line, and a portion is coupled onto the GIS
enclosure-to-ground transmission line. The latter constitutes the
TEV.
In general, TEV waveforms have at least two components, the
first one has a short initial rise time and is followed by high
frequency oscillations determined by the lengths of various
sections ofthe GIS, they are concentrated in the range of5 to 10
MHz. The second component is of lower frequency, hundreds
ofkHz, and is often associated with the discharge of capacitive
devices with the earthing system.
 Ie
0>---------

a) Diagramof the capacitive circuit

:. ; : :
" :;

b) Openingoperation

[JD.1S pu TRAPPED CHARGE

+-+-1-+-+H-+-+-+-IH-+-+-1H--+~H-J,--t-H~-!-..j.....,I4-+-J,........J~----,

.. ..

c) Closingoperation

Figure 1. Variationofload and source side voltages during disconnector switching [4].

6-4
 Source side Load side

1.5 -------ooop-oo-......----. 1 . 5 - - - - - - - - - - - - -......

Us (p.u.) UL(P·U.)
1.0
a 11.0 ~......-...+-~~
1 0.5 I----!~+_f_-+_-~~_+__#______t

o tl 200 400 600 800 1000 o t1 200 400 600 800 1000
----.. t (lIS) - -..... t(ns)

1.5 1.5
Us (p.u.) UL(P·U.)

I I
1.0 1.0
b
0.5 0.5

0 t1 2 4 6 8 10 0 t1 2 4 6 8 10
• t (I-Ls) - -..... t(l-Ls)

1.5 ....-----.----,----r-----, 1.5

Us (p.u.) UL(P·U.)

1 1
1.0 1.0
c r'
,....-J
I
I
0.5 ~_--+--""_-+-_ _+--_--1 0.5 I

I
I
I
I
I

o t1 90 t2 180 210 360 o t1 90 t2 180 210 360

- -.... t(lJ.s) - -..... t(lJ.s)

I I
1.5 1.5
Us (p.u.) UL(P·U.)
d 1.0 t----:::II~~___+__----I 1.0 I

0.5 0.5

o 1 t1 2 3 4 5
o 1 t1 2 3 4 5
- -.... t(ms) - -.... t(ms)

a) steepvoltage transients
b) basic frequency component of the VFT in the MHZ range
c) overall transients in the kHZ range
d) low frequency transient and steadystatecondition

Figure2. Transients on the sourceand load side of a GIS due to disconnector switching.

6-5
 ®
•

Length = 12 m

a) Scheme of the network

I i

If,.,.]
- , I} WOO l - ·_ · , 1} NU(JC» - f ll /rllJOO' "" ( 2 /NtJ()(M

R=O R=lOQ

b) Simulation results without trapped charge

L :

f····

: :

1{,./
••• • ,~ ~ lJOQI
'IN' - ",/rfUOO1

R=O R= 10Q

c) Simulation results with trapped charge

Figure 3. Generation ofVFTs in a GIS bus duct.

6-6
 @

Leng th =

a) Scheme of the network

.....
...:"; :...r . L.':
..... L.!
•_ ••• • · · · 0 • •• :•.: : : ·· ~: : LF:l
...: . ..:

- r ' } I'iI.lOO· • • • • t f'NUoo.

'/116)
- ( ' j IollJDOI

R=O R= IOn

b) Simulation results withouttrapped charge

. .....
i i
[...: I.
j r···-~
LoT'O ...f·-· :...:".. : ~ ..:
'...:

- ( I jMJOO , - ( 1) """00 '

'Ina)

R=O R= IOn

c) Simulation results with trapped charge

Figure4. Generation ofVFTs in a GIS with a bifurcation point.

6-7
 !ove~he.ad
Both components are damped quickly as a result of the lossy
nature of the enclosure-to-ground plane transmission mode.
E TEV generally persists for a few microseconds. The magnitude
translDlSSlon
varies along the enclosure; it can be in the range of 0.1 to 0.3 pu
.. line
Ir-~~-...... of the system voltage, and reaches the highest magnitude near
the GIS-air interface.

The TEV wave which couples onto the enclosure encounters

earthing connections which form transmission line
discontinuities and attenuate TEV. Mitigation methods include
grounding using low surge impedance, short length leads and
the installation of metal-oxide arresters across any insulating
spacers.

b) Transients on overhead connections

a) Propagation of travelling waves caused by a disconnector
operation
inside coaxial bus duct 2 on overhead line
3 between ground and encapsulation
c;
A portion of the VFT travelling wave incident at a gas-air
transition is coupled onto the overhead connection and
propagates to other components. This propagation is lossy and
results in some increase of the waveform rise time, although
transients can have rise times in the range of 10 to 20 ns if the
air connection is relatively short. In general, external waveforms
have two different characteristics
* the overall waveshape is dictated by lumped circuit
parameters, such as the capacitance of voltage
transformers or line and earthing inductance; the rise time
is in the range of a few hundred nanoseconds
* a fast front portion which is dictated by transmission line
effects; it has a rise time in the range of 20 ns and is
usually reduced in magnitude due to discontinuities in the
transmission path.

The fast rise time of the initial portion is possible as capacitive

b) Equivalent circuit components, such as bushings, are physically long and
distributed, and they cannot be treated as lumped elements.

The magnitude of the rise time portion of external transients is

generally lower than that of internal VFT, the voltage rate-of-
rise can be in the range of 10-30 kV/I1S. However, as VFT occur
during normal conditions in GIS and each disconnector
operation can generate tens to hundreds of individual transients,
possible aging on the insulation of external components must be
considered. These overvoltages can cause stress on adjacent
equipment, and resonance phenomena can occur in exposed
transformers.

c) Transient electromagnetic fields

c) Single-line diagram
Figure 5. Diagram to explain the generation ofTEV [20].
EMF are radiated from the enclosure and can cause some stress
on secondary equipment, especially when sophisticated
computer-controlled equipment may be affected. Their
frequency depends on the GIS arrangement, but is typically in

6-8
the range of 10 to 20 MHz.
2.3 EFFECTS ON EQUIPMENT
The level reached by VFT overvoltages originated by
disconnector switching or line-to-ground faults inside a GIS are
below the BIL of substation and external equipment. However,
aging of the insulation of external equipment due to frequent
VFT must be considered.
TEV is a low energy phenomenon, and it is not considered
dangerous to humans. The main concern is in the danger of the
surprise-shock effect. TEV can also cause interference with or
even damage to the substation control, protection and other
secondary equipment, and radiate EMF which may induce
voltages and currents within electric circuits.
The main effects caused by VFr to equipment and the
techniques which can be used to mitigate these effects are
summarized in Table 1.
3. MODELING GUIDELINES
Due to the travelling nature of VFT, modeling of GIS
components makes use of electrical equivalent circuits
composed of lumped elements and distributed parameter lines.
At very high frequencies, the skin losses can produce a
noticeable attenuation. However, due to the geometrical
structure of GIS and the enclosure material, skin losses are
usually neglected, which gives conservative results. Only the
dielectric losses in some components, e.g. capacitively graded
bushing, need be taken into account.
The next two subsections present modeling guidelines to
represent GIS equipment in computation of internal transients
and TEV.
3.1 COMPUTATION OF INTERNAL TRANSIENTS
All the distributed parameter lines take into account the internal
mode (conductor-enclosure) only, assuming that the external
enclosure is perfectly grounded. If TEV is of concern, then a
second mode (enclosure-ground) is to be considered. Table 2
shows the equivalent circuits proposed to represent main
components of a typical GIS [17]. More accurate models were
presented in [27].
Distributed parameter models shown in Tables 2 take into
account the internal mode (conductor-enclosure) only, assuming
6-9
the external enclosure to be perfectly earthed. IfTEV have to be
considered, it is necessary to add one more mode (enclosure-
ground) since at these high frequencies, the earth connections
assume significant impedance values.
A short explanation about the representation of the most
important GIS components follows.
a) Bus ducts
For a range of frequencies lower than 100 MHz, a bus duct can
be represented as a lossless transmission line. The surge
impedance and the travel time can be calculated from the
physical dimensions of the duct. Empirical corrections are
usually needed to adjust the propagation velocity. Experimental
results show that the propagation velocity in GIS ducts is close
to 0.95 - 0.96% of the speed of light [14], [24]. The error
committed by ignoring skin effect losses is usually negligible.
Other devices such as elbows or closed disconnectors can also
be modeled as lossless transmission lines.
b) Surge arresters
A surge arrester model should take into account the steep front
wave effect : the voltage developed across the arrester for a
given discharge current increases as the time to crest of the
current increases, and reaches crest prior to the crest of the
discharge current. A detailed model must represent each internal
shield and block individually, and include the travel times along
shield sections, as well as capacitances between these sections,
capacitances between blocks and shields, and the blocks
themselves. The model shown in Table 2 considers two
sections, represented as lossless transmission lines, and a
capacitance paralleled by a resistance between sections.
Experimental results show that switching operations do not
produce voltages high enough to cause MOVs to conduct.
Although sophisticated models have been developed to
represent an MOV, only its capacitance needs to be taken into
account.
c) Circuit breakers
The representation of a circuit breaker is very complicated due
to internal irregularities. In addition, circuit breakers with
several chambers contain grading capacitors. As these
components are not arranged symmetrically, a circuit breaker
has a different transient response depending upon which
terminal is connected to the surge source.
 TABLE 1- EFFECTS OF VERY FAST TRANSIENTS [17]
EQUIPMENT VFTEFFECTS
Direct connected transformers can experience
- an extremely nonlinear voltage distribution along the high voltage winding,
TRANSFORMERS connected to the oil-SF6 bushings, due to steep fronted wave impulses
- extremely high part-winding resonance voltages due to transient oscillations
generated within the GIS.
The insulation system of breakers and loadbreak switches is not endangered by VFf
overvoltages generated in adjacent GIS equipment.
DISCONNECTORS Ground faults induced by VFTO have been observed in disconnectors operations, as
& BREAKERS residual leader branches can be activated by enhanced field gradient to ground and
by feeding them with GIS-1l;enerated VFTO.
Breakdown caused by VFT overvoltages is improbable in a well-designed GIS
insulation system during normal operations. However, breakdown values can be
SF 6 INSULATION reduced by insulation irregularities like edges and fissures.
The breakdown probability is very low for low VFTO amplitudes, it increases with
the frequency of the oscillations and the degree of the field homogeneitv.
TEV can cause sparking across insulated flanges and to insulated busbars ofCTs, and
0\
I puncture of insulation which is intended to limit the spread of circulating currents
1--01
o within the enclosure.
ENCLOSURE
BUSHINGS SF6 insulated bushings can be affected as other SF6 equipment.
Very few problems have been reported with capacitivelv graded bushings,
CABLES No problems have been experienced on the main insulation.
VFT effects appear always in grounded circuits and are originated by TEVs.
TEV may interfere with secondary equipment or damage sensitive circuits
- by raising the housing potential if they are directly connected
SECONDARY - or via cable shields to GIS enclosure by emitting free radiation which may
EQUIPMENT induce currents and voltages in adjacent equipment.
MITIGATION TECHNIQUES
Transformers can withstand the stress built up by steep front waves. In critical cases, it
might be necessary to install varistors to protect tap changers against very high frequency
transient oscillations.
The development of a ground fault by branching of the leader discharge during a
disconnector operation can be avoided by a proper disconnector design.
TEVs can be minimized
- by a proper design and arrangement of substation mats
- by keeping ground leads as short and straight as possible in order to minimize the
inductance
- by increasing the number of connections to ground
- by introducing shielding to prevent internally generated VFT from reaching the
outside of the enclosure
- by installing voltage limiting varistors where spacers must be employed.
Avoid high impedance in the connection of the last graded layer to the enclosure.
Grounding connections must be modified to eliminate troubles.
Correct cable connection procedures may minimize interference. The coupling of
radiated energy may be reduced
- by mounting control cables closely along the enclosure supports and other
grounded structures
- by grounding cable shields at both ends by leads as short as possible
- by using optical coupling services.
Voltage limiting devices may have to be installed.
 TABLE 2 - GIS COMPONENT MODELS [17]

COMPONENT EQUIVALENT CIRCUIT NOTES

Bus duct -+'""-)_...,-----J}--

I
Loss-free distributed parameter
~srnissionlUne

Spacer ( C ~ 20 to 30 pF)

Elbow

Spherical shield (C ~ fewpF)

Surge arrester -f) ¢f)

I ..L ~
Closedswitch -f) }-
I

Open switch I

I
I I.---,- (n = numberof breaking
1" 1"
....L....L
chambers)

Closeddisconnector -+--)--.------}--
I

Open disconnector

Disconnector during sparking r =r(t) ; R =a few Q

C =a few tens pF

Bushing(capacitive type) n =numberof equivalent

shields(5 to 8) simulated

Bushing(gas filled) GIS --+"""') ~,AjR C = a few tens pF

u Ie z» 250 Q
Powertransformer parameters evaluated from the
(termination) frequency responseof the
~sformer

Currenttransformer sometimes negligible

Capacitive voltagetransformer

Earth connection

Aerial line or long cable r = surge impedance

(termination)

6-11
A closed breaker can be represented as a lossless transmission
line. The surge impedance is calculated from the diameters of
the conductor and enclosure. The electrical length is equal to the
physical length. The propagation velocity is also reduced to 0.95
- 0.96% of the speed of light. The effect of grading capacitors
can be ignored. The representation ofa closed circuit breaker is
more complicated because the electrical length is increased and
the speed of progression is decreased due to the effects of the
higher dielectric constant of the grading capacitors [24]. If the
intermediate voltages are needed, the breaker is divided into as
many sections as there are interrupters, all connected by the
grading capacitors.
A simpler model consists oftwo equal lengths ofbus connected
by a capacitor with a value equivalent to the series combination
ofall the grading capacitors. Parameters ofthe two bus sections
are calculated from the physical dimensions of the breaker. A
different representation has been proposed for circuit breakers
which contain pre-insertion resistors [24].
d) Gas to air bushings
A bushing gradually changes the surge impedance from that of
the GIS to that ofthe line. A detailed model ofthe bushing must
consider the coupling between the conductor and shielding
electrodes, and include the representation of the grounding
system connected to the bushing. A simplified model consists
of several transmission lines in series with a lumped resistor
representing losses. The surge impedance of each line section
increases as the location goes up the bushing. If the bushing is
distant from the point of interest, the resistor can be neglected
and a single line section can be used [24]. More advanced
models for capacitively graded bushings were proposed in [9],
[16] and [28].
e) Power transfonners
A common practice is to model a power transformer as a
capacitor representing the capacitance ofthe winding to ground.
When voltage transfer has to be calculated, interwinding
capacitances and secondary capacitance to ground must also be
represented. At very high frequencies a winding of a
transformer behaves like a capacitive network consisting of
series capacitances between turns and coils, and shunt
capacitances between turns and coils to the grounded core and
transformer tank. The equivalent capacitance, C; is given by
(3)
where C, and C, are the equivalent series and ground
capacitances ofthe winding. The equivalent series capacitance,
C s' is more difficult to compute. The details of computation
have been discussed in [37]. The terminal capacitance to ground
must be added to (3) to obtain the total capacitance of the
6-12
winding. Most of this terminal capacitance comes from the
capacitance of the terminal bushing to ground.
Ifvoltage transfer is not of concern, an accurate representation
can be obtained by developing a circuit that matches the
frequency response of the transformer at its terminals, At very
high frequencies, the saturation of the magnetic core can be
neglected, as well as leakage impedances.
f) Current transformers
Insulating gaps are usually installed in the vicinity of current
transformers. During high voltage switching operations, these
gaps flash over, establishing a continuous path. Travelling
waves propagate with little distortion. Current transformers can
often be neglected.
The parameters needed to represent these models can be
determined either from manufacturer's data or by calculation
based on the physical sizes ofthe equipment. If neither ofthese
is possible, the capacitance values can be estimated from those
shown in Table 2, while surge impedances can be estimated
around 50-80 ohms.
3.2 COMPUTATION OF TEV
At the frequencies of the VFT caused by dielectric breakdown
within the GIS (breakdown across disconnect switch contacts,
line-to-ground faults), currents are constrained to flow along
the surface of the conductors and do not penetrate through
them. The inside and the outside ofthe enclosure are distinct, so
that transients generated within the GIS do not appear onto the
outside surface of the enclosure until discontinuities in the
sheath are encountered. These discontinuities occur at gas-to-air
terminations (the most frequent case), GIS-cable transitions, or
external core current transformers.
The modeling ofthe GIS for computation ofTEV must include
the effects ofthe enclosure, the representation of ground straps
and the earthing grid.
A GIS-air termination can be modeled as a junction of three
transmission lines each with its own surge impedance, see
Figure 5. This equivalent network can be analyzed using
lossless transmission line models to determine reflected and
transmitted waves. The basic mechanism ofTEV is defmed by
the refraction of waves from the internal coaxial bus duct to the
enclosure sheath-to-ground system. The travelling wave incident
onto the GIS-air termination is reflected at this termination
being the magnitude ofthe transmitted wave onto the outside of
the enclosure sheath given by the coefficient
 (4)
where ZI, Z2 and Z3 are the surge impedance of the coaxial bus
duct, the overhead line and the sheath-to-ground system,
respectively [5]. The negative sign means that there is an
inversion ofthe waveform with respect to the internal transient.
TEV propagates back from the gas-to-air termination into the
substation on the transmission line defmed by the enclosure and
the ground plane. The first discontinuity in the propagation is
generally a ground strap. For TEV rise times, most ground
straps are too long and too inductive for effective grounding.
However, ground leads may have a significant effect on the
magnitude and waveshape ofTEV. This effect can be explained
by considering two mechanisms [6] :
* the ground lead may be seen as a vertical transmission line
whose surge impedance varies with height; when the
transient reaches the ground strap, a reflected wave is
originated which reduces the magnitude of the transmitted
wave, being the reduction expressed by the coefficient
2Z g
2Z g + Z 3 (5)
where Zg is the surge impedance of the ground strap and
Z3 the surge impedance of the enclosure-to-ground
transmission line; as Zg is usually much larger than Z3' the
attenuation produced by the ground strap will be usually
small
* the portion of the wave which propagates down the ground
strap meets the low impedance of the ground grid, then a
reflected wave will be produced at this point which
propagates back to the enclosure where it will tend to
reduce the original wave.
The representation of a ground lead as a constant surge
impedance is not strictly correct. In reality, the ground strap has
a continuously varying surge impedance, so that a continuous
reflection occurs as a wave propagates down the lead. An
analysis of the performance of different models for the ground
lead was presented in [6]; simulation results did show that a
constant inductor model may be adequate for straps with travel
time less than the surge rise time, while a nonuniform
impedance model may be necessary for much larger straps.
Reference [6] proposes to divide a ground strap into sections,
each one represented by a surge impedance calculated from the
following expression
6-13
Z
s
= 60 In 2 12 h (6)
r
where r is the strap radius and h the average height of the
section.
The representation of the earthing grid at TEV frequencies is a
very complex task. Furthermore, this grid may not be designed
to carry very high frequency currents, as no standards for very
high frequency earthing systems are currently available. A
simplified modeling may be used by representing the earthing
grid as a low value constant resistance.
Advanced models for GIS components in computation ofTEV
might consider a frequency-dependent impedance for ground
straps, a frequency-dependent model for the enclosure-
to-ground line (which could take into account earth losses) and
the propagation of phase- to-phase modes on the three
enclosures [6].
Distributed parameter models shown in Tables 2 take into
account the internal mode (conductor-enclosure) only, assuming
the external enclosure to be perfectly earthed. IfTEV have to be
considered, it is necessary to add one more mode (enclosure-
ground) since at these high frequencies, the earth connections
assume significant impedance values. A more detailed model is
then required, see Section 5.3.
4. VALIDATION
The accuracy of a simulation depends on the quality of the
model of each individual GIS component. In order to achieve
reasonable results even for time periods ofsome micro-seconds
or for very complex GIS structures, highly accurate models for
each internal component and also for external components,
connected to the GIS, are necessary. Figure 6 shows an example
of how a 420 kV disconnector with an arrangement of spacers,
shielding electrodes and varying diameters can be simulated by
the equivalent circuit derived from its geometry. Figure 6.c
shows the measured step response and the simulation result
using the equivalent circuit shown in Figure 6.b. An excellent
correlation between measurements and calculations can be
observed.
 V<>lt.11!l" I pu

1.5

1 .0

0 .5

- - - - measurement
_ _ simulat ion

o. 0 f-'-.,.-.,.--r--r--r-,--,--,--..-..-..-..-..-..-..-..-..-..-~
m o 50 100 150 200 250 300 350 400 450 500
121--+---'7'0 "I
t1lllo 1115

Figure 7. Comparison of simulationand measurement of

a) Anmngement of GIS equipment disconnect switch inducedovervoltages in a 420 kV GIS.

C02 C03 C04 C05 C06 C07 C08 COg

95.60 95.60 480 1250 480 95.60 95.60
O.21m a.41m a.79m a.125m 0.445m O.26m O.21m

spacer spacer

b) Equivalent circuit

voltage / pu a) Diagramof the substation

Measurement

1+-~----J'-r:'Y--~:----:7'"----t

:1-, _
21 U " I' 111
tiJle / DS o

c) Field measurement and simulation result

CaJ.cuJ.ation

Figure 6. Validationofa 420 kV disconnector operation.

1+-1-"''---I---i~V----'lr-~~-----t

An accuratemodelingof eachindividual GIS component makes

it possible to reproduceVFT waveforms with a relatively high
precision, especiallyin short GIS structures or test equipment.
Figure 7 demonstrates the accuracy of such techniques by
comparing a computersimulation with a directmeasurement of
a transient waveform in an actual GIS. The simulation
performed neglects the presence of propagation losses which
result in somewhatless damping of the high frequency part of
the waveform. The effects of spacers, flanges, elbows, corona
shields, and other connection hardware, were included in the
model.
o
o 2. 9 J.Ls
b) Comparison of simulation results and measurements
at measuring point M2
Figure 8. Measurement and simulationof overvoltages in a
420 kV GIS at closing of disconnectswitch Q 12.

6-14

Amplitude and frequency ofVFT can be reproduced withgood
accuracy for severalperiods and manydetailsin the waveform
can be explained. Figure 8 shows a part of a 420 kV GIS on
which measurements have been made at point M2. By closing
disconnect switch Q12, one part of the switchyard has been
connected. The measurements have been reproduced by a
detailedsimulation. Certain differences in the range of higher
frequencies did occur because the simulation was performed
with a low damping equivalent circuit and measuring
instruments didnotcaptureveryhighfrequencies. However, the
main waveformhas been reproduced with sufficient accuracy.
5. CASE STUDIES
As it has been explained above, VFT in GIS are caused by
dielectric breakdowns. The collapsing electric field during a
breakdown produces travelling waveswhichpropagate in both
directions from the disturbance location. This propagation can
be analyzed and simulated using transmission line theory, and
assuming that propagation losses are negligible. Travelling
wavesappearexternally at enclosure transitions, e.g. gas-to-air
terminations. At these transitions, reflected waves travelling
back onto the station and transmitted waves coupled onto the
outsideof the enclosure sheathsare generated.
The magnitude of the travelling waves will depend on their
source (disconnect switch operation, fault) and the GIS
configuration. Depending on the transient of concern, a
different modeling is to be considered. Guidelines for
simulation of internaland externaltransients werediscussed in
Section3.
Due to the very high frequencies generated by a dielectric
breakdown withinthe GIS, a digital simulation is restricted to
calculations duringtheVFTwaveformperiod,usually1or2 us,
If the simulation is performed with an EMTP-like program,
whichuses a constanttimestep size,then the valueof this step
sizewilldependon the shortertransittimein the GIS.Thisstep
size must be equal or smaller than one-halfthe shortertransit
time.
Three case studies are included in this section. The first one
presents the simulation of VFT in a 420 kV substation
generated by a closingoperation. Thenexttwo casesarerelated
to low voltage tests in a 765 kV GIS. Low voltage tests are a
veryusefultool for development and validation of GISmodels.
The first of these two cases presentsthe simulation of internal
transients, while the secondone is aimedat calculating TEV.
5.1 CLOSING OPERATION IN A 420 kV GIS [35]
6-15
Detailed calculations have been made for a 420 kV GIS with 2
line feederbays,a transformer and a bus coupler, see Figure9.
The double busbar system also included bus sectionalizers.
Single-phase enclosure is applied to the bays and three-phase
enclosure forthebusbars. According to theirinternaldesign, all
GIS components have been represented thoroughly by line
sections with the corresponding surge impedance and transit
time, and by lumped capacitances for spacers and additional
capacitances causedby internalshieldingdevices, see Figures
11 to 14.Thethree-phase encapsulated busbarsare represented
by surge impedances in positiveand zero sequence system.
Detailed data are given in Appendix A, Tables Al to A4.
Capacitive grading of thebushingshasbeensimulated assuming
two representative screens for each. The behavior of the
transformer winding under high-frequency transients has been
simulated by an equivalent circuit,see Figure 13, proposed by
the manufacturer, according to the high-frequency
measurements performed in the factory.
The behavior of the spark in the disconnecting switch during
closing was represented by a fixed resistance of 0.5 ohms in
serieswithan exponentially decreasing resistance, R =R, exp(-
t/T), with Ro = 1012 ohms and T = 1 ns, resulting in a time
duration of voltage breakdown of about IOns. Calculations
were performed for a closing operation of the by-pass
disconnecting switch in the line feeder bay 1, see Figure 10,
connecting the busbar 1 to the voltage source. Time-step size
was 0.15 ns. Simulation results are shown in Figure 15 for the
measuring pointsM1 to M5 :
* point Ml - node 35 in Figure 13 -, voltage stress at the
connection inside the transformer between bushing and
transformer winding
* point M2 - node 34 in Figure 13 -, high-frequency
oscillations at the GIS-sideof the transformer bushing are
caused mainly by the capacitive grading system of the
bushing
* point M3 - node 10 in Figure 11 -, the voltage oscillation
near the end of the switchedbusbar SS2 starts from non-
zero conditions, since part of the feeding voltage on
busbar SSI is capacitively coupled to busbar SS2 via the
capacitance of the open circuit breaker in the couplingbay
* point M4 and M5 correspond to nodes 3 in Figure 11 and
node 18 in Figure 13,respectively.
The investigation clearlyshows that very detailed information
of the internal design not only of the GIS but also of the
external equipment, likebushings and transformer windings, is
necessary to achieve reliableresults.
 bu. COuPI.~

t~on.fo~"'e~ feede~

Figure 9. Basicarrangement of the 420 kV GIS.

line feede~ 2

bu. .ectionollzer
M4

M3

bus coupler

t~on.for"'er fe.de~

Figure 10. Configuration of the 420 kV GIS used for the simulation.

6-16
 Zu".-409 o
btJslxJ SS2 -.4/ _

btJslxJ SSI--------.I--~-----
1 67 10 11

Figure 11 . Arrangement of busbars, including bus

sectionalizer.

_ _--...,;.'4 16
15
'3~' 9
1,0\.
,!>
,\'0
9 4
10
1 1 12
1.3
7
'6 ~ 14

.n
8 IS

22
21 Figure 13. Line feeder.

27
------=2:.:::1....,,~....,,!--I-~---------
28
19 4
29 18
30 17
33 31 16
32 15
34 14
35 13
, 2.' 0 12
11
10
9
8
0.7!> ..F 7

6 .....-----45
Figure 12. Transformerfeeder.

Figure 14. Bus coupler.

6-17
 1.0
5.2 LOW VOLTAGE TEST OF A 765kV GIS [24]
voltage - pu

Figures 16 and 17 show the one-line and the connectivity

diagram of a 765 kV test bay. Models used to represent
POINT M1 -+-------------- components of thiscase arepresentedin Table2. Theprocedure
followed to develop these models is detailed in [24]. A
summaryof this procedure follows:
1) Low voltage tests on individual components were
-1.0
performedusing waves with fronts of 4 and 20 ns.
voltage - pu 1.13 - 2) Models based on physical dimensions were developed,
1 .0
assuminga propagationvelocity equal to that of light.
3) Digital models were adjusted so simulation results were
matched to measurements. The main adjustment was to
decreasepropagationvelocity to 0.96 that of light.
POINT M2 --+--------------
Two transientshave been reproduced
-0.5
in the first one, a ramp voltage is applied at t =0
voltage - pu
in the second case, the ramp voltage source is also used
but the transient starts after closing a switch at the instant
the ramp reaches its maximumvalue.

Waveforms obtained for each case at two nodes are shown in

0.5
Figures 18 and 19. It can be observed that waveforms for both
cases are essentiallythe same, except for the first nanoseconds
POINT M3 --+-------------- in the vicinityof the input node DC1. These simulationresults
were validatedby comparison with low voltage measurements.
-0.5
For normal studies,the input wave will be one of three forms
voltage - pu 1 .06 -
1.0 * a ramp voltage with a magnitude determined by the
voltage across the switch

* two ramp currents on opposite sides of the switch such

that the voltage across the switch is equal to zero at the
POINT M4 ---+---------------
crest of the inputs

-0.5 * charge both sides of the switch to the desired value and
close the switch.
voltage - pu 1 .06 _
1.0

POINT M5 --+---------------

-0.5

o time - J.1.S 2

Figure 15. Simulationresults.

6-18
 BUSHING

-~/--t---t------:>.---,
UCI
) ) UK

(
Figure 16. One-line diagram ofa 765 kV GIS.

01
10 P F f

@
8
100 ohm @
8 § 8 (0 @ @ @)
®
8
@
8 e 8 e @
0
@) @ @ @ 8
-
2

@ @
0 8 S
@
75 ohm
8 @
@ @ @0 @ T3

75 oIlm

Figure 17. Connectivity diagramof the 765 kV GIS.

6-19
 5.3 CALCULATION OF TEV IN A 765kV GIS [24]

Modeling of GIS components to simulate TEVs must include

the effects of
* an enclosure, which cannot be assumed to be continuously
grounded
* the surge impedances and lengths of the grounding
structures
* the resistance of the earth ground.
trn-J
Each GIS component can be represented as a two-phase ideal
a) Voltage at location UC1 transmission line defmed by two modal parameters, ZO and Z 1,
whose values can be approached as follows [24]
Z = 60 In(D/d) Zl = Z/2 Zo = 20000 - Z,
where D is the inside diameter of the enclosure and d is the
outside diameter of the center conductor.

At the bushing, the two modes split with one going up to the
bushing and the other connected to the grounding surge
impedance, see Figure 20.
,---------------------

trn-J TOP OP BUSH:IN'G

AI.....
XAI----
b) Voltage at location UK B

Figure 18. Simulation results with 4 ns ramp. XB

GR.OUND
RES.STANCE

Figure 20. Connection of GIS to an air bushing.

Figures 21 through 24 show simulation results at different

locations produced by a 4 ns ramp as input voltage.

,~
6. CONCLUSIONS

a) Voltage at location VC1 A description of the origin and main characteristics ofVFT in
GIS, as well as their effects on substation and adjacent
equipment, has been summarized in this document. Modeling
guidelines for digital simulation of GIS networks in VFT
studies have been discussed. Their application was illustrated
with three case studies. Although guidelines proposed in this
document neglect propagation losses for many GIS components
and very simple models are proposed for most components,
validation tests have shown that an excellent correlation
,~
between simulation results and field measurements can be
achieved. More accurate models may be needed in some cases
b) Voltage at location UK for which propagation losses at very high frequencies should
Figure 19. Simulation results from closing a switch. not be neglected.

6-20
v(VJ

7. REFERENCES

[1] A. Ecklin, D. Schlicht and A. Plessl, "Overvoltages in

GIS caused by the operation of isolators", Surges in
high-voltage networks, K. Ragaller (Ed.), pp. 115-129,
Plenum Press, 1980.
[2] S. Narimatsu et al., "Interrupting performance of
capacitive current by disconnecting switch for gas
insulated switchgear", IEEE Trans. on Power Apparatus
and Systems, vol. 100, no. 6, pp. 2726-2732, June
Figure 21. Voltage between the center conductor and the 1981.
enclosure at location UCI. [3] S. Matsumara and T. Nitta, "Surge propagation in gas
insulated substation", IEEE Trans. on Power Apparatus
and Systems, vol. 100, no. 6, pp. 3047-3054, June
1981.
[4] S.A. Boggs et al., "Disconnect switch induced transients
and trapped charge in gas-insulated substations", IEEE
Trans. on Power Apparatus and Systems, vol. 101, no.
6, pp. 3593-3602, October 1982.
[5] N. Fujimoto, E.P. Dick, S.A. Boggs and G.L. Ford,
"Transient ground potential rise in gas-insulated
substations - Experimental studies", IEEE Trans. on
Power Apparatus and Systems, vol. 101, no. 6, pp.
Figure 22. Voltage between the enclosure and ground at the 3603-3609, October 1982.
base of the bushing. [6] E.P. Dick, N. Fujimoto, G.L. Ford and S. Harvey,
v(VJ "Transient ground potential rise in gas-insulated
substations - Problem identification and mitigation" ,
IEEE Trans. on Power Apparatus and Systems, vol.
101, no. 6, pp. 3610-3619, October 1982.
[7] L. Blahous and T. Gysel, "Mathematical investigation
of the transient overvoltages during disconnector
switching in GIS", IEEE Trans. on Power Apparatus
and Systems, vol. 102, no. 9, pp. 3088-3097, September
1983.
[8] G. Bernard, J. Massat, G. Ebersohl and G. Voisin,
"Study of electromagnetic transients due to disconnector
Figure 23. Voltage between the center conductor and ground switching in metal enclosed substations", Revue
at location UK. Generate de l'Electricite, no. 11, pp. 667-694, ~
v(VJ 1983.
[9] R.J. Harrington and M.M. EI-Faham, "Proposed
methods to reduce transient sheath voltage rise in gas
insulated substations", IEEE Trans. on Power Apparatus
and Systems, vol. 104, no. 5, pp. 1199-1206, May
1985.
[10] J. Lalot, A. Sabot, J. Kieffer and S.W. Rowe,
"Preventing earth faulting during switching of
disconnectors in GIS including voltage transformers",
IEEE Trans. on Power Delivery, vol. 1, no. 1, pp. 203-
211, January 1986.
Figure 24. Voltage between the center conductor and the [11] S. Ogawa et aI., "Estimation of restriking transient
enclosure at location UK. overvoltage on disconnecting switch for GIS", IEEE

6-21
 Trans. on Power Delivery, vol. 1, no. 2, pp. 95-102,
April 1986.
[12] T. Yoshida et aI., "Distribution of induced grounding
current in large-capacity GIS using multipoint grounding
system", IEEE Trans. on Power Delivery, vol. 1, no. 4,
pp. 120-127, October 1986.
[13] J. Ozawa et aI., "Suppression of fast transient
overvoltage during gas disconnector switching in GIS",
IEEE Trans. on Power Delivery, vol. 1, no. 4, pp.
194-201, October 1986.
[14] N. Fujimoto, H.A. Stuckless and S.A. Boggs,
"Calculation of disconnector induced overvoltages in
gas-insulated substations", Gaseous Dielectrics IV,
Pergamon Press, 1986.
[15] R. Boersma, "Transient ground potential rises in gas-
insulated substations with respect to earthing systems",
Electra, no. 110, pp. 47-54, January 1987.
[16] R. Witzmann, "Fast transients in gas insulated
substations. Modelling of different GIS components",
5th Int. Symposium on HV Engineering, Paper no.
12.06, Braunschweig, 23-28 August, 1987.
[17] CIGRE Working Group 33/13-09, "Very fast transient
phenomena associated with gas insulated substations",
CIGRE Paper No. 33-13, 1988.
[18] CIGRE WG 33/13-09, Monograph on GIS Very Fast
Transients, 1988.
[19] N. Fujimoto and S.A. Boggs, "Characteristics of GIS
disconnector-induced short risetime transients incident on
externally connected power system components", IEEE
Trans. on Power Delivery, vol. 3, no. 3, pp. 961-970,
July 1988.
[20] J. Meppelink, K. Diederich, K. Feser and D.W. Pfaff,
"Very fast transients in GIS", IEEE Trans. on Power
Delivery, vol. 4, no. 1, pp. 223-233, January 1989.
[21] CIGRE Working Group 33.02, Guidelinesfor
representation of networks elements when calculating
transients, 1990.
[22] S. Yanabu et aI., "Estimation of fast transient
overvoltage in gas-insulated substation", IEEE Trans. on
Power Delivery, vol. 5, no. 4, pp. 1875-1882, October
1990.
[23] A.M. Miri and M. Schelker, "ATP simulation of
transient ground potential rise in gas-insulated
substations", EMTP News, vol. 4, no. 3, pp. 14-21, SepaThr
1991.
[24] D.L. Nickel, "Very fast transients in Gas-insulated
substations", EPRI Report, 1991.
[25] S. Okabe, M. Kan and T. Kouno, "Analysis of surges
measured at 550 kV substations", IEEE Trans. on Power
Delivery, vol. 6, no. 4, pp. 1462-1468, October 1991.
[26] H. Toda et aI., "Development of 800 kV gas-insulated
switchgear", IEEE Trans. on Power Delivery, vol. 7,
6-22
no. 1, pp. 316-323, January 1992.
[27] Z. Haznadar, C. Carsimamovic and R. Mahmutcehajic,
"More accurate modeling of gas insulated substation
components in digital simulations of very fast
electromagnetic transients", IEEE Trans. on Power Delivery,
vol. 7, no. 1, pp. 434-441, January 1992.
[28] A. Ardito et aI., "Accurate modeling of capacitively
graded bushings for calculation of fast transient
overvoltages in GIS", IEEE Trans. on Power Delivery,
vol. 7, no. 3, pp. 1316-1327, July 1992.
[29] A.M. Miri and M.A. Nothaft, "Simulation of the effects
of ZnO-varistors in reducing the transient ground
potential rise between a GIS enclosure and the cable
outlet flange", Proc. of the First European Conference
on Power Systems Transients, pp. 53-60, Lisbon, June
17-18, 1993.
[30] H.W. Dommel, "Simulating travelling waves inside and
outside GIS enclosures with the EMTP", presented at
the Canadian Electrical Association, Toronto, March
1994.
[31] A.M. Miri and C. Binder, "Investigation of transient
phenomena in inner- and outer systems of GIS due to
disconnector operation", Proc. ofthe Int. Conference on
Power Systems Transients, pp. 71-76, Lisbon, SepaThr
3-7,1995.
[32] Y. Yamagata et aI., "Suppression of VFT in 1100 kV
GIS by adopting resistor-fitted disconnector", IEEE
Trans. on Power Delivery, vol. 11, no. 2, pp. 872-880,
April 1996.
[33] M. lanoz, L. Dellera, C.A. Nucci and L. Quinchon,
"Modeling of fast transient effects in power networks
and substations", CIGRE Paper 36-204, 1996.
[34] K. Mizuno et aI., "Investigation ofPD pulse propagation
characteristics in GIS", IEEE Transmission and
Distribution Conference Proceedings, pp. 204-212, Los
Angeles, September 15-20, 1996.
[35] IEEE TF on Very Fast Transients (D. Povh, Chairman),
"Modelling and analysis guidelines for very fast
transients", IEEE Trans. on Power Delivery, vol. 11,
no. 4, October 1996.
[36] IEC 71-2, Insulation Co-ordination - Part 2 :
Application Guide, 1996.
[37] P. Chowdhuri, Electromagnetic Transients in Power
Systems, RSP-John Wiley, 1996.
[38] CIGRE Joint WG 33/23.12, "Insulation co-ordination of
GIS : Return of experience, on site tests and diagnostic
techniques", ELECTRA, no. 176, pp. 66-97, February
1998.
 APPENDIX A - DATA OF THE 420 kV GIS TABLEA2 - TRANSFORMER FEEDER DATA

TABLE Al - LINE FEEDERDATA Branch Length Z C

(m) (0) (pF)
Branch Length Z C
1 - 2 1.20 95
(m) (0) (pF) 2 - 3 0.75 42
1 - 2 1.20 95 3 - 4 4
2 - 3 0.75 42 4 - 5 0.30 42
3 - 4 0.15 42 5 - 6 0.45 95
4 - 5 0.30 42 6 - 7 0.45 95
5 - 6 0.45 95 7 - 8 0.15 42
6 - 7 0.45 95 7 - 9 0.75 42
7 - 8 0.15 42 9 - 10 0.15 42
7 - 9 0.75 42 10 - 11 0.30 42
9 - 10 4 11 - 12 1.10 95
10 - 11 0.30 42
12 - 13 1.15 95
11 - 12 1.10 95
13 - 14 1.20 95
12 - 13 1.15 95
13 - 15 0.75 42
13 - 14 1.20 95 15 - 16 4
13 - 15 0.75 42 16 - 17 0.30 42
15 - 161) 4 17 - 18 0.65 95
16 - 17 0.30 42 18 - 19 0.40 42
17 - 18 0.65 95 19 - 20 1.10 42
18 - 19 0.40 42 20 - 21 0.30 95
19 - 20 1.10 42 21 - 22 0.70 95
20 - 21 0.30 95 22 - 23 1.10 66
21 - 22 0.70 95 23 - 24 1.15 66
22 - 23 1.10 66 24 - 25 0.70 95
23 - 24 1.15 66 8 - 25 2.30 95
24 - 25 0.70 95
17 - 26 0.80 95
8 - 25 2.30 95
26 - 27 0.90 72
17 - 26 0.80 95
27 - 28 0.80 95
26 - 27 0.90 72 28 - 29 0.90 95
27 - 28 0.60 95
29 - 30 1.50 95
28 - 29 0.60 25
30 - 31 0.80 95
27 - 30 4.00 95 31 - 32 0.60 95
30 - 31 0.15 95
32 - 33 0.60 25
31 - 32 1.50 95
31 - 34 11.0 25
32 - 332) 4.90 95 34 - 35 1) 2.30 126
2 - E 10 2 - E 10
5 - E 14 5 - E 14
6 - E 10 6 - E 10
8 - E 10 8 - E 10
11 - E 24 11 - E 24
13 - E 10 13 - E 10
17 - E 10 17 - E 10
21 - E 10 22 - E 10
22 - E 32 23 - E 32
23 - E 32 24 - E 32
24 - E 32 25 - E 32
25 - E 10 26 - E 10
26 - E 10
27 - E 10
27 - E 10
28 - E 16
29 - E 10 29 - E 10
30 - E 10
31 - E 10
1)by-pass disconnect switch 2) special bushing representation

1)special bushing representation

6-23
 TABLE A3 - BUSBARDATA APPENDIX B - DATA OF THE 765 kV GIS
Branch Length Zo ZI C
(m) (0) (0) (PF)
1 - 2 1.80 157 113
Branch Z Travel time
2 - 3 3.70 157 113
(0) (ns)
3 - 4 5.60 157 113
4 - 5 0.90 157 113
UCI - J3 75 6.40
5 - 6 0.85 104 60 J3 - J4 75 48.0
6 - 7 0.15 104 60 J4 - T22 75 2.20
7 - 8 0.20 104 60
T22 - T23 51 1.90
8 - 9 1.80 157 113 J4 - 09 78 2.20
9 - 10 7.40 157 113 09 - 088 68 1.80
10 - 11 1.80 157 113 D88 - 066 59 4.20
1 - E 12 D44 - 022 33 5.80
2 - E 3 D22 - Dl 330 9.10
3 - E 3 J3 - T21 75 2.20
4 - E 3 T21 - T20 51 1.90
8 - E 3 T20 - Tl9 160 0.67
9 - E 3 T19 - T18 65 1.70
10 - E 3 T19 - T17 75 6.80
T17 - T16 65 1.70
T17 - J7 75 8.50
J7 - T24 75 2.20
TABLE A4 - BUS COUPLERDATA T24 - T25 51 1.90
Branch Length Z J7 - T26 75 2.20
C T26 - T27 51 1.90
(m) (0) (pF) T17 - T14 160 0.67
1 - 2 1.20 95 T14 - T13 51 1.90
2 - 3 0.45 42 TI3 - TIl 75 9.90
3 - 4 0.15 42 TIl - T12 65 1.70
4 - 5 0.90 42 TIl - J2 75 7.50
5 - 6 0.60 95 J2 - T9 75 2.20
6 - 7 0.90 72 T9 - TI0 51 1.90
7 - 8 1.00 95 TIO - T28 160 0.67
8 - 9 0.30 66 T28 - J6 75 7.10
9 - 10 4 J6 - UK 75 6.40
10 - 11 0.80 66 T28 - T29 65 1.70
11 - 12 0.85 66 T28 - J5 75 8.80
12 - 13 4 J5 - T30 75 2.20
13 - 14 0.30 66 T30 - T32 51 1.90
14 - 15 0.70 95 J2 - Jl 75 6.70
15 - 16 1.70 95 Jl - T4 75 2.20
16 - 17 0.45 95 T4 - T3 51 1.90
17 - 18 0.45 95 Jl - TS 75 2.20
18 - 19 0.45 42
19 - 20 0.15 42
20 - 21 0.75 42
21 - 22 0.15 42
22 - 23 1.20 95
8 - 14 900
2 - E 10
6 - E 10
7 - E 10
8 - E 32
11 - E 40
14 - E 32
15 - E 10
16 - E 24
17 - E 10

6-24