TMS27C32 32,768-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC32 32,768-BIT PROGRAMMABLE READ-ONLY MEMORY This Date Sheet Is Applicable to All ror 7MS27622s and TMS27PC32s Symbolzod tro? views wath Code "A" as Described on Page 12. av (FORD vee © Organization... aK x 8 ae 2 zap} a8 as zi a8 © Single 5.v Power Supoly Aa Ele aif] att © Pin Compatible with Existing 22K MOS Ag Gs 200] Gree ROMs. PROMSs, and EPROMe az qs ssf} aro Mar whe © JEDEC Standard Pinout PaHeebiee © All nputs/Outputs Fully TTL Compatible ar Qs sf) a7 @ Gro 5B) a8 © Max Access/Min Cycle Times 2 ye eh ee Voc 25% Voc £10% ono Giz_ssf} ae “a7caa-t00 “2782-10 100ns “27/PC32-120 “27C/PC3212 120 ns Pa MENCLATRE “276)PC32-180 “27C/PC32-18 150 ns TORT haa pa ‘arcimes22“27C/PC32.20 200 ns Ech tnnie ‘arejpes2—“270/"C32.25 250 ns Bee Oupun eaieti219 V © Power Saving CMOS Technology ono umain we Si © Very High-Speed SNAP! Pulee Programming Ot08 Gupte or Fast Programming Algorithme ee. $4 ower Supt fe 2-State Output Butfere © Low Power Dissipation (Voc = 8.25 V) — Aetive . .. 132 mW Worst Case = Standby... 1.4 mW Worst Case (CMOS Input Levels) (© PEPA Version Available with 168 Hour Bum- In, and also Extended Guaranteed Operating Temperature Ranges (© 400 mV Guaranteed ‘DC Noise Immunity with Standatd TTL Loads © Latchup immunity of 250 mA on All Input ‘end Output Lines description ‘Tho TMS27C32 series are 32,768-bit ultravioletight erasable, electrically programmable read-only ‘The TMS27PC32 series are 32,768-bit, one-time, electrically programmable read-only memories. ‘These devices are fabricated using power saving CMOS technology for high-speed and simple interta: with MOS and bipolar circuits. All inputs (including program data inputs) can be driven by Series 74 TTL circuits without the use of externel pull-up resistors. Each output can drive one Series 74 TTL circuit without external resistors. The data outputs are three-state for connecting multiple devices to a common bus. The TMS27C32 and the TMS27PC32 are pin compatible with 24-pin 32K MOS ROMs, PROMs, and EPROM. ‘The TMS27C32 EPROM is offered in a dual-insline ceramic package (J suffix) designed for insertion in ‘mounting hole rows on 1,2-mm (600-mi) centers. The TMS27C32 is available with two gu temperature ranges of O°C to 70°C and ~ 40°C to 85°C (TMS27C32-_JL and TMS27C32-.. JE, respectively). The TMS27C32 is also offered with 168 hour burnin on both temperature ranges ADVANCE INFORMATION 5 EPROMs/PROMs/EEPROMs (7MS27C32-__JL4 and TMS27C32._ _JE4, respectively. (See table on page 2) ence Grovan © To, Tos nono noes iia, Beate enna Sens & oraniion tof ncn ie Texas eet ‘inert santa atee oN cone INSTRUMENTS‘TMS27C32 32,768-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC32 32,768-BIT PROGRAMMABLE READ-ONLY MEMORY The TMS27PC32 PROM is offered in a dualintine plastic package (N suffix) designed for insertion in ‘mounting hole rows on 15,2-mm (600-mil) centers. The TMS27PC32 is guaranteed for operation from 0°C to 70°C (NL suffix) All package styles conform to JEDEC standards. ‘SUFFIX FOR OPERATING ‘SUFFIX FOR PEPA a TEMPERATURE RANGES 160 + 8 HR. BURNIN WITHOUT PEPA BURNIN (VS TEMPERATURE RANGES Tew I] aC wee] Tow IOC] -4C WATT THSaTCSE RX Ie 7 ry ee ‘These 32K EPROMs and PROMS operate from a single 5-V supply (in the read model, thus are ideal for uuse in microprocessor based systems. One other 12-13 V supply is needed for programming. All programming signals are TTL level. These devices are programmable by either Fast or SNAP! Pulse programming algorithms. Fast programming uses @ Vpp of 12.5 V and a Voc of 6.0 V for @ nominal programming time of two minutes. SNAP! Pulse programming uses a Vpp of 13.0 V and a Vcc. 9f 8.8 V for a nominal programming time of 1 second. For programming outside the system, existing EPROM. programmers can be used. Locations may be programmed singly, in blocks, or at random Zz operation ‘There are seven modes of operation listed in the following table. Read mode requires a single 5-V supply. All inputs are TTL level except for Vp during programming (12.6 V for Fast, or 13.0 V for SNAPI Pulse) and 12 V on AQ for signature mode. 8WOUd33/SWOd/*WOud3S FUNCTION cr 5 wm ‘Ovut vam ¥. Program | Signewre ems) ed Guest | stanaoy | Programming | vety aoe ray iu ‘ vi w vi vi v vn na ne 5 ‘i i iu ‘ 5 Bee v vi * v ve vi na i ts x vee a ee a esa ce cc cc cc cc ice ce 2 x x x x x x but fue (22) im x in| on ar08 CO0E on. Pour wz ez Ow Dour wz — [wee [oence| 1347) 7 | os Wye vn Os. TEXAS, wy S22 INSTRUMENTS‘TMS27C32 32,768-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC32 32,768-BIT PROGRAMMABLE READ-ONLY MEMORY road/output disable ‘When the outputs of two or more TMS27C32s or TMS27PC32s are connected in parallel on the same bus, the output of any particular device in the circuit can be read with no interference from the competing ‘Qutputs of the other devices. To read the output of a single device, a low-level signal is applied to the E and GiVpp pins. All other devices in the circuit should have their outputs disabled by applying a high-level signal to one of these pins. Output data is accessed at pins 1 to OB, latchup immunity Lotchup immunity on the TMS27C32 and TMS27PC32 is a minimum of 260 mA on all inputs and outputs. ‘This feature provides latchup immunity beyond any potential transients at the P.C. board level when the devices are interfaced to industry standard TTL or MOS logic devices. Input/output layout approach controls. latchup without compromising performance or packing density. For more information see application report SMLAQO’ HVCMOS EPROM Family, power down “Design Considerations; Latchup Immunity of the ‘available through TI Fiold Sales Offices. ‘Active Ic¢ current can be reduced from, 30 mA to 600 A (TTLtevel inputs} oF 250 wA (CMOS-evel inputs) by applying 2 high TTL signal to the E pin. In this mode all outputs are in the high-impedance state. ‘erasure (TMS27632) Before programming, the TMS27C32 EPROM is erased by exposing the chip through the transparent lid to high intensity ultraviolet light (wavelength 2537 angstroms). EPROM erasure before programming is necessary to assure that all bits are in the logic 1 (high) state. Logic Os are programmed into the desired locations. & programmed logic 0 can be erased only by ultraviolet light. The recommended minimum ultraviolet ight exposure dose (UV intensity * exposure time) is 15 watt-seconds per square centimeter A typical 12-miliwatt-per-square-centimeter, fiterless UV lamp will erase the dovice in 21 minutes. Th lamp should be located about 2.6 centimeters above the chip during erasure, It should be noted that normal ambient light contains the correct wavelength for erasure, Therefore, when using the TMS27C32, the window should be covered with an opaque label Initializing (T™M1S27PC32) ‘The one-time programmable TMS27PC32 PROM is provided with all bits in the logic 1 state, then logic Os are programmed into the desired locations. Logic Os programmed into s PROM cannot be erased. ‘SNAP! Pulse programming The 32K EPROM ar PROM can be programmed using the TI SNAP! Pulse programming algorithm ilustrated bby the flowchart in Figure 1, which can reduce programming time to 8 nominal of one second. Actual programming time will vary as a function of the programmer used. Data is presented in parallel (eight bits} on pins Q1 to QB, Once addresses and dats stable, Eis pulsed ‘The SNAP! Pulse programming algorithm uses initial pulses of 100 microseconds (ss) followed by a byte verification to determine when the addressed byte has been successfully programmed. Up to 10 (ten) 100 4s pulses per byte are provided before @ failure is recognized 18.0 V, Vec = 6.5 V, and E = Vip. More than one connected in parallel. Locations can be programmed % TEXAS, INSTRUMENTS: 6-23 EPROMs/PROMs/EEPROMs‘TMS27C32 32,768-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC32 32,768-BIT PROGRAMMABLE READ-ONLY MEMORY 5 SINOHd33/SINOUd/SWOUda {fest programming ‘The 32K EPROM and PROM can be programmed using the Fast programming algorithm illustrated by the flowchart in Figure 2. During Fast programming, data is presented in parallel (eight bits) on pins Q1 to QB. Once addresses and data are stable, E is pulsed. The programming mode is achieved when Grvpp = 12.5, Vcc = 6.0 V, and = Vil. More than one device can be programmed when the devices ‘are connected in parallel. Locations can be programmed in any order. Fast programming uses two types of programming pulses: Prime and Final. The length of the Prime pulse is 1 milisocond; this pulse is applied X times. After each Prime pulse, the byte being programmed is verified. IY the correct data is read, the Final programming pulse is applied; if correct data is not read, en additional 1 milisecond pulse is applied up to @ maximum X of 25. The Final programming pulse is 3X long. This sequence of programming and verification is performed at Vcc = 6.0 V and GiVpp = 12.5 V. When the full Fast programming routine is complete, all bits are veritied when Vcc = G/Vpp =5 V. program inhibit Programming may be inhibited by maintaining a high level input on the E pin. program verity Programmed bits may be verified when G/Vpp and E = Vu. signature mode sture mode provides access to a binary code identifying the manufacturer and type. This mode ig activated when A9 (pin 22) is forced to 12 V + 0.5 V. Two identifier bytes are accessed by AO (pin; i.e., AO = VIL accesses the manufacturer code which is output on 1-08; AO = Vip accesses the device code which is output on Q1-O8, All other addresses must be held at ViL. Each byte possesses ‘odd parity on bit G8. The manufacturer code for these devices Is 97, and the device code is 08. 6-26TMS27C32 32,768-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY ‘TMS27PC32 32,768-BIT PROGRAMMABLE READ-ONLY MEMORY Core "ADDRESS — FIRST LOGATION V = 026 v. Giver = 130V2 [PROGRAM ONE PULSE = tw = 100 a} INCREMENT ADDRESS Last no. ‘ADORESS? vs "ADDRESS = FIRST LOGATION { PROGRAM ONE PULSE = ty = 100 pe ProcnaM 5 EPROMs/PROMs/EEPROMs FIGURE 1. SNAP! PULSE PROGRAMMING FLOWCHART % TEXAS. INSTRUMENTS % <> sme FINAL VERIFICATION 6-25TMS27C32 32,768-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY ‘TMS27PC32 32,768-BIT PROGRAMMABLE READ-ONLY MEMORY SINOHd33/SWOUd/S\WOHdS 6-26 “ADORESS = FIRST LOCATION ‘PROGRAM ONE 3X me DURATION No. | WNoREMENT IADDRESS. ves DEVE FAILED Veo = 8V. Gvep - Va COMPARE ‘ALL BYTES TO) ‘ORIGINAL ATA FIGURE 2. FAST PROGRAMMING FLOWCHART TEXAS, % INSTRUMENTSTMS27C32 32,768-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY ‘TMS27PC32 32,768-BIT PROGRAMMABLE READ-ONLY MEMORY logic symbols EPROM A056 B PROM 4056 < 8 0" az] a oA oA a a 095 ‘005 & a an] In ha (PWR OWN te wR OWN = = EN ~ ‘rece aymbols ar in secordance with ANSVIEEE Std 91.1984 and IEC Pubiemion 617-12, Ingo (unless otherwise noted) -0.8 Vto7V 5 Leese -0.6V 10 18. range (see Note 1); All inputs except AS... 0.6 V 10 6.5 V . 1) -0.6 V t0 13.8 V -0.6 Vito Veo + 1V ir temperature range ('27€32- JL and JL4; *27PC32-__NL) °C to 70°C. ir temperature range ('27C32-_ JE and JE4) 40°C to 85°C 85°C to 150°C NOTE 1: Under absolute maximum rating, voltage vekies * Stresses beyond thase listed under "Absolute Maxsnum Ratings” may causa permanent damage tothe device. This is #stess rating any. and tinctonal operation ofthe device at these or anyother conditions beyond thoveinieted inthe "Recommended Operating Conditions section a this specification snot implies. Expoture To absolute maximurn rated conditions for extended prods may ate device olay. TEXAS. % INSTRUMENTS ADVANCE INFORMATION | EPROMs/PROMs/EEPROMs 627‘SINOHd33/SINOHd/SWONdS NOILVINHOANI JONVAGV ‘TMS27C32 32,768-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY ‘TMS27PC32 32,768-BIT PROGRAMMABLE READ-ONLY MEMORY recommended operating conditions rea eT “zrempe32-120 “rreresz-12 ‘rrepesz-00 “zremesz.16 "2ICIPC32-2 “27CIPC32-20 usr “zones -zromesz.25 aR Now Woe | him NOMA eo ode es Noe 7 ae 8 eae | ae ce. Siply volte Far pragrring rn e758 aa | ae aa] SHAP Pose orogrreing pon] 625 65 678 | 625 85675 at pow Ss asa | es Sree Surely vom SRaPT Pulse programming slgorithm| 12.75 131328 [ 1275 131325] ¥ 70 z veers]? Yeoet Ver Minvt input vokaoe es — ee Ta Lowi ban ve 77 om on] 08 os], Lowering vonage cL = oat 38 a Ta Soaring Toor per i wape | oem page a] | oe wooo | 7 NOTE 2: Voc must be apple before oat the some tine os Vpp ond removed after oF at ‘board when Upp oF Voc i eppied ‘electrical characteristics over full ranges of recommended operating conditions PARAMETER “TEST CONOTTONS man wet max | on Ton = =26 ma 38 v You Habavel ouput vtoge eee a ~ Vo. Lowsevel output vltge aan ES TL put arene Gwakage Vs 0vwsév ap ig Out erent dekage? Vo = 0V w vec a1 [os tee Gee suppl curent ling progam puis) | CiVep = 19 3550 | ma vey VEC HY caret [TTL ve Voc = 55 v. Fv 250 soo | +A * stony) cwosinpx eve | vee = 88 v. 8 = vot 700 260_[ na Ver = 85 V.E= Vi toca Voc svpptycusen active) Aeyela = minimam cycle tine, 0 a5 | ma utp open ‘Typical valine we at Ta = 25°C and nominal volgen ‘capacitance over recommended supply voltage range and operating free-air temperature range, f= 1 Met PARAMETER TEST CoNDMONS Mn _Tve?_Max | UNT Gout conactanes Vie Ovit = 1 Mae eo 10 | oF Co Output capneance Vo = OV.t= 1 mie 1014 | oF ‘Trypicel valine te ot Ta. = 25°C ond nominal voRoges. 2Capectence massureants ae made on mole Bais on 6.28 TEXAS, 4 INSTRUMENTS:‘TMS27C32 32,768-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC32 32,768-BIT PROGRAMMABLE READ-ONLY MEMORY switching characteristics over full ranges of recommended operating conditions (see Notes 3 and 4) Teav conomong | (27682-100 |27enesa 20] a7ene3a.180 PanaMersn cceerconormons | “ayeaz.i0_|-zvoneaz.i2 [a7crca2.16 | UT ‘an oa] tan Max |W — MAX Tea Accu re om sree 100 70 150 [a tal) ASCs te for eh enti 10 120 160-[ re teniG) Ouout eae tne tom Gpp | Cy = 100 6. = 5 75 [re Ovi deaie srw om Givpp_| ¥ Sere 74 TT. ton Soon E. whichever oceure first Input | $20 ne, . * o of] Output date valid time after trout 4 £20 om tn) change of ern, Er ° ° ° re Bivep, whichever ocr eet “arenes | aveneaa esr conomons | 4 : panaeren eer comomions | -aycreaz-20 | 27cm092.25 | UNT ‘an wax | mn MAX Twa Acco tne fom oa 20 260 [we The) Asset tine fom emp ent ou = 10006 200 250 [ve TeiGh OU rales on BivpP 1 Sore 7677 ton, 75 100 |e Outpt date te for Givpp OE whch | Py 20 yee te ‘oie occurs tis Input ty 520 ns ° "Out dte vd nw on chang of 5 7 . ‘VIA! _E, of Givpp. whichever occurs first "Vote calculated tom 0.8 V doe omens eve. The pane onysanged and not 100% tere. switching characteristics for programming: Vcc = 6 V and G/Vpp = 12.5 V (Fast) or Voc = 6.50 and G/Vpp = 13.0 V (SNAP! Pulse}, Ta = 25°C (see Note 3) PARAMETER Tanna | OWT [ange on ° 730_[ me tec) Ost NOTES: &. Forall lege ADVANCE INFORMATION A EPROMs/PROMs/EEPROMs 6-29‘TMS27C32 32,768-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY ‘TMS27PC32 32,768-BIT PROGRAMMABLE READ-ONLY READ-ONLY MEMORY recommended timing requirements for program’ 6 V and Givpp 2.5 V (Fast) or Voc = 6.50 V and Givpp = 13.0 V (SNAPI Pulse), Ta - 25°C (see Note 3) m in Wow wax [ ow Fa ee aa 393 Toe | ‘auram ite pogrom pike droion 3 Es 'SNAPY Pulse programming sigoritoy 35100105 | ss 3 Toatpaa Fiat pubs duran Fast progarming on Z8. 7.75 [me Sea ects ou ue z = [to ass tre z a BZ [csvon —Bivop sw ve 2 a 3B Fetvecr—vec sate tne 7 = Pia atari 3 = Sip) bat rei ne z os [inven ver nats re a B B [scrai reo He 2 = 3 ea) vee B [eet Ome va ra Eo Th SZ [uroia Bree rae ve = ra > Q < S 2 9 m 2 a 9 a = > =| 6 2 630 Texas. % INSTRUMENTS‘TMS27C32 32,768-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC32 32,768-BIT PROGRAMMABLE READ-ONLY MEMORY PARAMETER MEASUREMENT INFORMATION 208 AL = 8000 ourpur. UNDER TEST 7B aoe FIGURE 3. OUTPUT LOAD CIRCUIT AC testing inputioutput wave forms 24V— ray ove ae ogy ev. A.C. testing inputs are driven at 2.4 V for logic 1 and 0.4 V for logic 0. Timing measurements are made at 2.0 V for logic 1 and 0.8 V for logic O for both outputs. read cycle timing aoa é ‘ADDRESSES VALIO se Spe ADVANCE INFORMATION 5 EPROMs/PROMs/EEPROMs TEXAS, & 631 INSTRUMENTS‘SNOHd33/SINOUd/SINOHdS NOLLVINHOSNI JONVAGYV 5 632 TMS27C32 32,768-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY ‘TMS27PC32 32,768-BIT PROGRAMMABLE READ-ONLY MEMORY program cycle timing a ea I * f i want vay avon —_{onawerme hn von vou mor! 1 reek Tt re peor! ated ee a a pean Themes | ' t ie sl woe | | tere | I vm ! ' ve Laeeurvt | ee twarcm Tinvecr Seren + vee charactor ofthe dev WVpp 00d 8.0 V Vc for Mania) Hey but must be accommadsted by the programe programming: 13.0 V GiVpp and 6.80 V Vcc for SNAPI Pus device symbolization This data sheot is applicable to all TI TMS27C32 CMOS EPROMs and TMS27PC32 CMOS PROMS with the data sheet revision code “A” as shown below. + J DATA SHEET REVISION CODE: FRONT END CODE: ie Revision cone ———— ‘YEAR OF MANUFACTURE! (WEEK OF MANUFACTURE: TEXAS, % INSTRUMENTS1 ‘TMS27PC32 32,761 BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY PROGRAMMABLE READ-ONLY MEMORY ce1— Standby Supoly Curent ‘Mormelred) FREE Am TEMPERATURE surety VOLTAGE y va i» Bow be oes rast fin Tomer sumy Tours ‘a evan 1 ‘a Sead rea a pts oi 4 ie de eT @ 4 id ox teas oxo ° SSTANOBY SUPPLY CURRENT FREE AIR TEMPERATURE ‘STANDBY SUPPLY CURRENT SUPPLY VOLTAGE vagy { Spee , Hee : in Seren En we ee | Cg Ta=Free Ar Temparaure— °C ACTIVE SUPPLY CURRENT 425.45 475 60 526 55 575 Vco~Svpply Voltage —V ACTIVE SUPPLY CURRENT 75-80-28 0 25 50 Ta-Froe A Temperature Voe~Suoely Votege—V 425 45 475 50 525 65 575 ns 80-25 0 28 80 75 100 125 ‘Ta—FrewAle Temperature °C 50 425 45 475 50 525 58 575 Voo~Supply Votage—v ADVANCE INFORMATION B EPROMs/PROMs/EEPROMs TEXAS INSTRUMENTS 6.33