DATA SHEET

DATA SHEET
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SILICON TRANSISTOR

2SC3355
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise PACKAGE DIMENSIONS
amplifier at VHF, UHF and CATV band. in millimeters (inches)
5.2 MAX.
It has lange dynamic range and good current characteristic. (0.204 MAX.)

FEATURES

(0.216 MAX.)
• Low Noise and High Gain

5.5 MAX.
NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz
• High Power Gain

(0.551 MIN.)
MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz 0.5

14 MIN.
(0.02)

(0.069 MAX.)
1.77 MAX.
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Collector to Base Voltage VCBO 20 V 1.27 2.54
(0.05) (0.1)
Collector to Emitter Voltage VCEO 12 V

(0.165 MAX.)
4.2 MAX.
Emitter to Base Voltage VEBO 3.0 V
Collector Current IC 100 mA 1 2 3
Total Power Dissipation PT 600 mW
Junction Temperature Tj 150
C
1. Base EIAJ : SC-43B
Storage Temperature Tstg 65 to +150
C 2. Emitter JEDEC : TO-92
3. Collector IEC : PA33

ELECTRICAL CHARACTERISTICS (TA = 25
C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

Collector Cutoff Current ICBO 1.0
A VCB = 10 V, IE = 0

Emitter Cutoff Current IEBO 1.0
A VEB = 1.0 V, IC = 0

DC Current Gain hFE 50 120 300 VCE = 10 V, IC = 20 mA

Gain Bandwidth Product fT 6.5 GHz VCE = 10 V, IC = 20 mA

Output Capacitance Cob 0.65 1.0 pF VCB = 10 V, IE = 0, f = 1.0 MHz

Insertion Power Gain
S21e
2

9.5 dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz

Noise Figure NF 1.1 dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz

Noise Figure NF 1.8 3.0 dB VCE = 10 V, IC = 40 mA, f = 1.0 GHz

hFE Classification
Class K

Marking K

hFE 50 to 300

Document No. P10355EJ3V1DS00 (3rd edition)

Date Published March 1997 N
Printed in Japan © 1985
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2SC3355

TYPICAL CHARACTERISTICS (TA = 25
C)

TOTAL POWER DISSIPATION vs. FEED-BACK CAPACITANCE vs.

AMBIENT TEMPERATURE COLLECTOR TO BASE VOLTAGE
2
heat sink
f = 1.0 MHz
PT-Total Power Dissipation-mW

19

Cre-Feed-back Capacitance-pF
1000

10
With heat sink
1

3.8

7.8
500
Free air

0.5

0 50 100 150
TA-Ambient Temperature-°C 0.3
0 0.5 1 2 5 10 20 30
VCB-Collector to Base Voltage-V

DC CURRENT GAIN vs. INSERTION GAIN vs.

COLLECTOR CURRENT COLLECTOR CURRENT
200 15
VCE = 10 V VCE = 10 V
f = 1.0 GHz

100
|S21e|2-Insertion Gain-dB
hFE-DC Current Gain

10

50

20

10 0
0.5 1 5 10 50 0.5 1 5 10 50 70
IC-Collector Current-mA IC-Collector Current-mA

GAIN BANDWIDTH PROUDCT vs. INSERTION GAIN, MAXIMUM GAIN

COLLECTOR CURRENT vs. FREQUENCY
10
Gmax
fT-Gain Bandwidth Product-GHz

5.0
20
3.0
|S21e|2-Insertion Gain-dB
Gmax-Maximum Gain-dB

|S21e|2
2.0

1.0
10
0.5
0.3
0.2 VCE = 10 V
VCE = 10 V IC = 20 mA
0.1 0
0 0.5 10 5.0 10 30 0.1 0.2 0.4 0.6 0.8 10 2
IC-Collector Current-mA f-Frequency-GHz

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2SC3355

NOISE FIGURE vs. INTERMODULATIOn DISTORTION vs.

COLLECTOR CURRENT COLLECTOR CURRENT
7
VCE = 10 V
f = 1.0 GHz
6
−80
5
NF-Noise Figure-dB

IM3
4
−70

IM2, IM3 (dB)

−60
2

IM2
1
−50
0
0.5 1 5 10 50 70 VCE = 10 V
at V0 + 100 dB µ V/50 Ω
IC-Collector Current-mA −40 Rg = Re = 50 Ω
IM2 f = 90 + 100 MHz
IM3 f = 2 × 200 − 190 MHz
−30
20 30 40 50 60 70
IC-Collector Current-mA

S-PARAMETER
VCE = 10 V, IC = 20 mA, ZO = 50

f (MHz)
S11
 S11
S21
 S21
S12
 S12
S22
 S22

200 0.173 80.3 13.652 103.4 0.041 73.8 0.453 21.8
400 0.054 77.0 7.217 85.1 0.066 71.2 0.427 26.0
600 0.013 57.9 4.936 74.0 0.113 69.3 0.428 30.8
800 0.028 81.8 3.761 62.3 0.144 67.0 0.414 37.2
1000 0.062 82.2 3.094 58.3 0.183 64.7 0.392 43.2
1200 0.091 80.7 2.728 52.9 0.215 61.7 0.377 51.4
1400 0.121 80.2 2.321 44.9 0.240 58.7 0.359 58.3
1600 0.148 80.1 2.183 36.4 0.288 50.7 0.354 67.2
1800 0.171 80.0 1.892 30.2 0.305 46.8 0.345 80.0
2000 0.207 79.9 1.814 21.4 0.344 39.1 0.344 90.4

VCE = 10 V, IC = 40 mA, ZO = 50

f (MHz)
S11
 S11
S21
 S21
S12
 S12
S22
 S22

200 0.011 60.1 13.76 105.4 0.040 73.3 0.421 17.5
400 0.028 42.9 7.338 82.9 0.069 66.7 0.416 22.8
600 0.027 25.1 4.996 72.7 0.114 69.4 0.414 28.7
800 0.043 65.7 3.801 61.9 0.144 67.8 0.406 35.7
1000 0.074 75.1 3.134 57.6 0.183 63.4 0.386 41.8
1200 0.098 75.6 2.759 52.4 0.221 62.1 0.373 49.8
1400 0.120 74.1 2.351 44.4 0.247 55.7 0.356 56.3
1600 0.146 75.8 2.203 36.0 0.291 49.6 0.347 66.6
1800 0.171 77.2 1.910 29.9 0.299 46.0 0.342 78.8
2000 0.205 78.0 1.825 21.3 0.344 39.4 0.335 89.6

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2SC3355

S-PARAMETER

S11e, S22e-FREQUENCY CONDITION VCE = 10 V 0.11

0.12 0.13 0.14
0.15
0.10 0.39
0.38 0.37 0.36
9 0.35 0.1
0.0 0.40 100
90 80 6
1 0.3 0.1
8 0.4 110 70 4

1.0
0.0 2 0.3 7

0.9

1.2
0.8
0.4 600 3 0.

1.4
0
07

0.7
12 18
0.

1.6
0.
43 32

0.6
0. 0 0.2

1.8
50
13

0. 31
14 0.4 6

2.0
0

19
0.

0.
4

5
0.
T
EN 0.4

0.2 0
0.4 5

0
0 .0

40
N

0.3
5

) MPO

0
4
0.

( –Z–+–J–XTANCE CO
0.0TOR
0
0.6 3.

0.2
4
RA

0.2
6
0
0.4

1
30
0.0 GENE

15

C
0.8

9
0.3

EA

O
4.0

ER

0.2
3
0.02 TOWARD

ITIV
1.0

0.2
7
0.4

2
EES

POS

8
6.0

0
1.

20
0.2
S11e

EGR

0.23
THS
0.8

0.48

0.27
T IN D
2.0 GHz

NG
0.6

WAVELE
10

10
E
0.01

0.24
0.49

0.26
0.1 0.4

CI
IC = 40 mA

F
IC = 20 mA 20

0.0W2ARD LOADLECTION COEF

0.2
50

0.1

0.2

0.3

0.4

0.5

0.6
0.7
0.8
0.9
1.0

1.2

1.4
1.6
1.8
2.0

3.0

4.0

5.0

10

20

0.25
0.25
0
0
0

0
REACTANCE COMPONENT

( R
––––
ZO ) 0.2 IC = 40 mA 50

0.2 GHz 20

F
0.01

0.24
0.49

0.26
E
0.2 GHz

R
0.4

−10
0.1

OF
10

THS ANGLE
0.6

0.23
0.48

0.27
O
8

T
0.
IC = 20 mA

4 VELE −160

−20
0.2

ENT

0
3

0.2
5.0

1.
NG
7
0.0

0.2
ON
0.4 2.0 GHz 1.0
S22e

2
MP

8
4.0

)
CO
0

AC −J––O–
A
0.8

−3
0.2
–Z
TA X
0.3

15
0W

E
0

NC
6

0.2
(

0
.
−
0.4

1
9
0.6 0
3.

RE

0.2 0
0.4 5

E
0
4
0. 06 40
0.

IV

−4
5

0.3
.

0
0

AT
0. −1

0
G 0.4
NE

0. 31
19
5
4

0.
0.
−5

2.0
30
4

0
−1 0.

1.8
07

0.6
0.2 18
0. 3 0.

1.6
4 20 −6 32

0.7
0. −1 .08 0 0.1

1.4
0.8
0 2 0.3 7

1.2
0.9
−70

1.0
0
0.0
9 0.4 −11 0.1
6 3
1 −100 −80 0.15 0.3
0.4 0.10 −90 4
0.11 0.14 0.35
0.40 0.12 0.13
0.36
0.39 0.38 0.37

S21e-FREQUENCY CONDITION VCE = 10 V S12e-FREQUENCY CONDITION VCE = 10 V

IC = 40 mA IC = 40 mA
90° 90°

120° 60° 120° 60°

0.2 GHz

150° 30° 150° 30°

S12e
S21e 2.0 GHz

2.0 GHz 0.2 GHz

180° 0° 180° 0°
4 8 12 16 20 0.1 0.2 0.3 0.4 0.5

−150° −30° −150° −30°

−120° −60° −120° −60°

−90° −90°

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2SC3355

[MEMO]

5
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[MEMO]

6
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[MEMO]

7
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Anti-radioactive design is not implemented in this product.

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