Chapter 2

Mobility
2.1 (a) The mean free time between collisions using Equation (2.2.4b) is

q mn  n mn
n    mn   1.71  10 13 sec
mn q

where n is given to be 300 cm2/Vsec (= 0.03 m2/Vsec), and mn is assumed to be

m0.

(b) We need to find the drift velocity first:

vd   nε  60000 cm / sec .

The distance traveled by drift between collisions is

d  vd mn  0.10 nm .

2.2 From the thermal velocity example, we know that the approximate thermal velocity
of an electron in germanium is

3kT
vth   3.37  107 cm / sec .
m

Consequently, the drift velocity (vd) is (1/10)vth = 3.37106 cm/sec, and the time it
takes for an electron to traverse a region of 1 m in width is

104 cm
t  2.97  1010 sec .
3.37  106 cm / sec

Next, we need to find the mean free time between collisions using Equation (2.2.4b):

q mn  n mn
n    mn   2.66  1013 sec
mn q

where n is 3900 cm2/Vsec (=0.39 m2/Vsec, for lightly doped germanium, given in
Table 2-1), and mn is 0.12m0 (given in Table 1-3). So, the average number of
collision is

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 t
 1117 collision  1117 collisions .
 mn

In order to find the voltage applied across the region, we need to calculate the electric
field using Equation (2.2.3b):

3.37  106 cm / sec

vd    nε  ε  vd   864.1 Vcm 1 .
n 3900 cm 2 / V sec

Then, the voltage across the region is

V  ε  width  864.1 Vcm 1  10 4 cm  0.8641V .

2.3 (a)
4
10
Log[]

1
2

3
10

2
10
100 200 300 400 500 600 700 T (K)

(b) If we combine 1 and 2,

Log[]
3
10

2
10 T (K)
100 200 300 400 500 600 700

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 The total mobility at 300 K is
1
 1 1 
 TOTAL (300 K )      502.55 cm 2 / V sec .
 1 (300 K )  2 (300 K ) 

(c) The applied electric field is

1V
εV   10V / cm .
l 1 mm

The current density is

J ndrift  q n nε  q n N d ε  80.41A / cm2 .

Drift
2.4 (a) From Figure 2-7 on page 62, we find the resistivity of the P-type sample doped
with 11016cm-3 of boron is 1.5 -cm.

(b) The donor density (phosphorous) exceeds the acceptor density (N). Hence, the
resulting conductivity is N-type, and the net dopant concentration is Nnet = |Nd-Na|
= n = 91016cm-3 of electrons. However, the mobilities of electrons and holes
depend on the total dopant concentration, NT=1.11017cm-3. So, we have to use
Equation (2.2.14) to calculate the resistivity. From Figure 2-4,
17 -3 2
n(NT=1.110 cm ) is 750 cm /Vsec. The resistivity is

1 1 1
    0.093  cm .
 qN net  n 3

q  9  10 cm  750 cm 2 / V sec
16

(c) For the sample in part (a),

N   1.04  1019 cm 3 
E f  Ev  kT ln v   0.026V ln 16 3
  0.12 eV .
 Na   10 cm 

Ec

Ei
0.12 eV
Ef
Ev

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 For the sample in part (b),

 N   2.8  1019 cm 3 
E c  E f  kT ln c   0.026eV ln 3 
  0.14 eV
 9  10 cm 
16
 N net 
0.14 eV

Ec
Ef
Ei

Ev

2.5 (a) Sample 1: N-type Holes are minority carriers.

p = ni2/Nd = (1010cm-3)2/1018cm-3 = 102 cm-3

Sample 2: P-type Electrons are minority carriers.

n = ni2/Na = (1010cm-3)2/1014cm-3 = 106 cm-3

Sample 3: N-type Holes are minority carriers.

p = ni2/Nnet = (1010cm-3)2/(1018cm-3)  102 cm-3

(b) Sample 1: Nd = 1018cm-3

n(Nd = 1018cm-3) = 270 cm2/Vsec (from Figure 2-4)
 = qNdn = 43.2 -1cm-1

Sample 2: Na = 1014cm-3
p(Na = 1014cm-3) = 470 cm2/Vsec (from Figure 2-4)
 = qNap = 0.075 -1cm-1

Sample 3: NT = Nd+Na = 1.00011018cm-3

n(NT = 1.0011018cm-3) = 270 cm2/Vsec (from Figure 2-4)
Nnet = Nd-Na = 1018cm-3
 = qNnetn = 43.2 -1cm-1

(c) For Sample 1,

N   2.8  1019 cm 3 
Ec  E f  kT ln c   0.026V ln 18 3
  0.027 eV .
 Nd   10 cm 
0.027eV
Ec
Ef

Ei

Ev

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 For Sample 2,

N   1.04  1019 cm 3 
E f  Ev  kT ln v   0.026V ln 14 3
  0.24 eV .
 Na   10 cm 
Ec

Ei
0.24 eV
Ef
Ev

For Sample 3,

 Nc   2.8  1019 cm 3 
Ec  E f  kT ln   0.026V ln 3 
  0.027 eV .
 N net  N d  N a   9.9  10 cm 
18

0.027eV
Ec
Ef

Ei

Ev

2.6 (a) From Figure 2-5, p(Na = 5  1017cm-3 of As) is 180 cm2/Vsec. Using Equation
(2.2.14), we find

1 1
   0.069  cm .
 qn p

(b) The mobility of electrons in the sample depends not on the net dopant
concentration but on the total dopant concentration NT:

NT  N d  N a  1  1018 cm 3 .

From Figure 2-4,

 n NT   270 cm 2 / V sec and  p NT   150 cm 2 / V sec .

Nnet = Nd-Na = 0. Hence, we can assume that there are only intrinsic carriers in
the sample. Using Equation (2.2.14),

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 1 1 1
  
 qni  n  qpi  p qni  n   p 
1
 .

q  1  10 cm  270  150 cm 2 / V sec
10 3

The resistivity is 1.49106 -cm.

(c) Now, the total dopant concentration (NT) is 0. Using the electron and hole
mobilities for lightly doped semiconductors (from Table 2.1), we have

 n  1400 cm 2 / V sec and  p  470 cm 2 / V sec .

Using Equation (2.2.14),

1 1 1
  
 qni  n  qpi  p qni  n   p 
1
 .
q  1  10 cm  1400  470cm 2 / V sec 
10 3

The resistivity is 3.34105 -cm. The resistivity of the doped sample in part (b)
is higher due to ionized impurity scattering.

2.7 It is given that the sample is p-type, and the applied electric field  is 800V/cm. The
electron velocity dp is 3105cm/s.

(a) From the velocity and the applied electric field, we can calculate the mobility of
electrons:
dn = n, n = dn/ = 3105/800 = 375cm2/V·s.

From Figure 2-5, we find Nd is equal to 5.01017/cm3. Hence,

n = Nd = 5.01017/cm3, and p = ni2/n = ni2/ Nd = 1020 / 5.01017 = 200/cm3.

Clearly, the minority carriers are the holes.

(b) The Fermi level with respect to Ec is

Ef = Ec-kTln(Nc/Nd) = Ec-0.104 eV.

(c) R = L/A. Using Equation (2.2.14), we first calculate the resistivity of the sample:

 = q(n n + p p)  qn n = 1.610-19  375  5.01017 = 30/-cm, and

=  -1 = 0.033 -cm.

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 Therefore, R = (0.033)  20m / (10m 1.5m) = 440.

Diffusion
2.8 (a) Using Equation (2.3.2),

J = qn = qD(dn/dx).

Therefore,

 = D(1/n)(dn/dx) = -D/. (constant)

(b) J = qn n = qn and  = n.

Therefore,  = -D/n  = -(kT/q)/.

(c)  = -1000V/cm = -0.026/. Solving for  yields 0.25m.

1 dEi 1  
2.9 (a) ε  dV    .
dx q dx q L qL

(b) Ei is parallel to Ev. Hence, we can calculate the electron concentration in terms of
Ei.
 
where Ei ( x)  E f   / L x.
 Ei ( x )  E f / kT
n ( x )  ni e

Therefore, n( x)  ni e  x / LkT .

dn
(c) J n qn n ε  qDn 0
dx
   
qni e  x / LkT  n  qDn ni e  x / LkT   0
qL  LkT 

Therefore,

n Dn kT
  Dn  n .
q kT q

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