~ Cinfineon MOSFET OptiMOS™ 5 Power-Transistor, 150 V. Features + N-channel, normal level + Excellent gate charge x Rosin) product (FOM) + Very low oneresistance Rosin + 150°C operating temperature + Pb-free lead plating; RoHS compliant + Qualified according to JEDEC"” for target application + Ideal for high-frequency switching and synchronous rectification Table 1__Key Performance Parameters Parameter [Value [Uni Vos. Rostenimax 4 B oss [Qc (ov..10V) 28. sw 14.5 nc [Type / Ordering Code Package Marking Related Links IBSC110N15NS5, PG-TOSON-8 +10N15NS. - 41 J-§1020 and JESD22 Final Data Sheet 1 Rev. 2.5, 2021-05-20o OptiMOS™ 5 Power-Transistor, 150 V Infi neon BSC110N15NS5 Table of Contents Description 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics 3 Electrical characteristics diagrams 5 Package Outlines 9 Revision History 10 Trademarks 10 Disclaimer 10 Final Data Sheet 2 Rev. 2.6, 2021-05-20OptiMOS™ 5 Power-Transistor, 150 V BSC110N15NSS oS Infineon 1__ Maximum ratings 5 C, unless otherwise specified Table 2__ Maximum ratings Values Parameter |symbot lUnit [Note / Test Condition Min. [Typ [Max. LEC Te=25 °C Continuous drain current fo EO BIA UTEE80 Sc Pulsed drain current” ove EE aoa fA | re=25 °C Avalanche energy, single pulse” [Ens EF ft00 my |n=50.A, Ros=25 2 Gate source voltage Ves leo | fo vy Power dissipation Eras |w[re=25 °c Operating and storage temperature |T,Tm 55 | as0 [re (EC aimatic ctegory: 2 Thermal characteristics Table 3__ Thermal characteristics Values Parameter |symbot lUnit [Note / Test Condition Min. [Typ. _[Max. Thermal resistance, junction -case [Ric - fos ft [cw | 6 om? cooling area”? [Row rf eR 3__ Electrical characteristics at T-25 °C, unless otherwise specified Table 4 _ Static characteristics Values ; 5 Parameter lsymbot lUnit [Note / Test Condition Min. |Typ._[Max. Drain-source breakdown voltage Vewoss [50 | Fv V, fo=1 mA\ Gate threshold voltage Vesun ssa fae |v vA Lor ft 0V, T=25 °C. Zero gate voltage drain current loss cS oo A OV, 1a125°C Gate-source leakage current fess |; |t_ftoo Ina Efe faa Drain-source on-state resistance Rosen bo Ha me Gate resistance” [Re EF fos fiss [a | Transconductance los 29 [58 |S [IVost21folRosimnnan, b=38 A 11 $e0 Diagram 3 for more detailed information 2 Seo Diagram 13 for more detailed information » Device on 40 mm x 40 mm x 1.6 mm epoxy PCB FR4 with 6 em* (one layer, 70 um thick) copper area for drain connection, POBiis vertical in stil air. ‘Defines by design. Noi subject to production test Final Data Sheet Rev. 2.6, 2021-05-20OptiMOS™ 5 Power-Transistor, 150 V In fi neon BSC110N15NS5 Table 5 Dynamic characteristics Values ; ; Parameter |Symbol Unit |Note / Test Condition iin. tye. [Max Input capacitance’? Cvs - 12080 [2770 |pF |Vas=0 V, Vos=75 V, f1 MHz Output capacitance? Cons - 515685 pF [Vas=0 V, Vos=75 V, 1 MHz Reverse transfer capacitance’) Crs - 13 23 [pF V, Vos=75 V, f=1 MHz Turr-on delay time fiw | fros fe |rw (erty Veortov, woo BV, VanIOV, BOB A, Rise time ; Es fre [Merry Turmatt delay time ce '5 V, Ves=10 V, In=38 A, Fall ime A Es Fr [Were Table 6 Gate charge characteristics” Values Parameter symbol JUnit |Note / Test Condition in. [typ. [ax Gate source cha a ie | he TOA Vassdto TOV Gate to drain charge" Qos - 5.8 EJ Inc n=38 A, Vos=0 to 10 V Swicing charge ants pre 5B A, Vase to 10 Gate charge total’! Qs IL 28 35 Inc =38 A, Ves=0 to 10 V Gate patau vlogs Vanw se e V BA VesrO to 10V Output charge"? Qoss LE [78 103 [nC |Voo=75 V, Vos=0 V Table7 Reverse diode Values Parameter Symbot nit uote Test condition itn. tye. ax Diode continous foward event i Diode pls current lean} For Ja Ire=as6 Diode foward volage Vaan fn2(VWar0v, maa T=25"O Reverse recovery time” - 45 190 Ins Va=75 V, Ir=38 A, dir/dt=100 Aus Reverse recovery charge’? LK 46. \92. INC |Va=75 V, I-=38 A, diridt=100 Als "Defined by design. Not subject to production test 2 Seo "Gate charge waveforms” for parameter definition Final Data Sheet 4 Rev. 2.6, 2021-05-20OptiMOS™ 5 Power-Transistor, 150 V BSC110N15NS5 4 Electrical characteristics diagrams — Infineon Diagram 1: Power dissipation [Diagram 2: Drain current sp 0 [ to 0 m % z Zo a : © : \ = » ° ee eG ee a Te PC] Te PC) Pro=t(Te) lo=f(Te); Ves=10 V [Diagram 4: Max. transient thermal impedance 10 10 10! bial 10° 10 0 0 10° 0 10 10 Vos [V1 0 ingle pulse, 10? oe tO 0 Is] To=liVoahi To=25 "°C; D0; parameter: Zioe=figy, parameter. D=tT Final Data Sheet 5 Rev. 2.5, 2021-05-20OptiMOS™ 5 Power-Transistor, 150 V BSC110N15NS5 oo Infineon Diagram 5: Typ. output characteristics [Diagram 6: Typ. drain-source on resistance 150 1 38 tov av ¥ Tau // 7] we 28 ‘to L 85V. g 2 z E 2 3 é 15 | 50 BV: ‘0 Y Tov BV. 5 ° ° ° 1 2 3 4 5 ° “0 80 120 160 Vos 1 toIAl TlVoah T=25 °C: parameter: Ves Rosinr(o), 25 “Cs parameter: Ves Diagram 7: Typ. transfer characteristics Diagram 8: Typ. forward transconductance 140 100 120 80 100 60 80 = gz 2 & 60 ‘» * | EU Tae * 7 / ° o ° 2 4 6 8 10 ° 20 40 60 a 100 Vos 1M] bial To=flVas; Vos)» 2] Rosonnas parameter: Ty go-to Te25 °C Final Data Sheet 6 Rev. 2.6, 2021-05-20OptiMOS™ 5 Power-Transistor, 150 V BSC110N15NS5 oo Infineon Diagram 9: Drain-source on-state resistance Diagram 10: yp. gate threshold voltage 25; 20) 6 Rosien [mo] 10 ‘yp 20 100140 60 nee) 50 45 40 35 30 25 Ves IV] 20 18) 19 os. oo 60 20 x00 140 60 Tee) Rosin: 38 A; Ves=10V Vesinr(Ts Ves= Vos: parameter: fo Diagram 14: Typ. capacitances: Diagram 4 “orward characteristics of revers diode 10 0 10 lpr] 0° —a5c 25°C, max 0° 180°C, max| ro FIA 0 10 10° 0° : ° 30 60 0 0 180 00 05 10 15 20 Vos [V] Veo [VI C=(Voe); Vas“ Vi Et MZ ivan), parameter 7 Final Data Sheet 7 Rev. 2.5, 2021-05-20OptiMOS™ 5 Power-Transistor, 150 V BSC110N15NS5 oo Infineon Diagram 13: Typ. gate charge. 0 10 Hf . Vi at sy ray 6 Eo = 2 g 4 2 10! ° o 10 oe ty o. 5 0 4% 2 2 3 toys] Qo IC Tas=i(tahs Res=25 O; parameter Tiers “38A pulsed: parameter: Voo Diagram 15: Drain-source breakdown voltage Diagram Gate charge waveforms 170 165 160 4s. 140 135. Vos “60-2020. Tee) VeniossFt(Ty; =1 mA Final Data Sheet 8 Rev. 2.5, 2021-05-20OptiMOS™ 5 Power-Transistor, 150 V Infi neon BSC110N15NS5 5 Package Outlines «— ¢ 02 oe = os 1 st { | LT |eee} = x * & “ | foo . lO vas i} A ial He z i laa /B]A ro ‘DOUHENT WO. om ca 3 oi = EUROPEAN PROVEETON 2 ao wm “poe me Evo eee, of Figure 1 Outline PG-TDSON-8, dimensions in mm Final Data Sheet 9 Rev. 2.6, 2021-05-20— OptiMOS™ 5 Power-Transistor, 150 V Infi neon BSC110N15NS5 Revision History BSCTTONTENSS Revision: 2021-05-20, Rev. 2.5 Previous Revision Revision [Date [Subjects (major changes since last revision) 20 2016-05-26 [Release of inal version 21 2015-06-09 _|Update Avalanche Energy 22 2017-09-18 [Update Ron max at Vgs=8V 23 [2018-02-21 _ [Update labels Diagram 9 24 [2018-05-23 [Update date 25 2021-05-20 _|Update Diagram 11 and forward current Trademarks We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document, Please send your proposal (Including a reference to this document) to: ‘erratum@infineon.com Published by Infineon Technologies AG 81726 Munchen, Germany © 2020 Infineon Technologies AG All Rights Reserved. Legal Disclaimer ‘The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (Beschaffenheitsgarantie") With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the Product, Infineon Technologies hereby disclaims any and all warranties and liabilties of any kind, including without limitation ‘warranties of non-infringement of intellectual property rights of any third party. Tn addition, any information given in this document is subject to customer's compliance with its obligations stated in this ‘document and any applicable legal requirements, norms and standards concerning customer's products and any use of the product of Infineon Technologies in customer's applications. ‘The data contained in this document is exclusively intended for technically trained staft. tis the responsibilty of customer's technical departments to evaluate the suitability ofthe product forthe intended application and the completeness of the product information given in this document with respect to such application. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon ‘Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Offic. ‘The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems andlor automotive, aviation and aerospace applications or systems only with the express writen approval of Infineon Technologies, ita failure of stich components can reasonably be expected to cause the failure ofthat life-support, automotive, aviation and ‘aerospace device or system oF to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support andior maintain and sustain and/or protect human life. IFthey fail, itis reasonable to assume thal the health of the user or other persons may be endangered Final Data Sheet 10 Rev. 2.6, 2021-05-20