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FJAF6810
FJAF6810

High Voltage Color Display Horizontal

Deflection Output
• High Collector-Base Breakdown Voltage : BVCBO = 1500V
• High Switching Speed : tF(typ.) =0.1µs
• For Color Monitor

TO-3PF
1
1.Base 2.Collector 3.Emitter

NPN Triple Diffused Planar Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Rating Units
VCBO Collector-Base Voltage 1500 V
VCEO Collector-Emitter Voltage 750 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current (DC) 10 A
ICP* Collector Current (Pulse) 20 A
PC Collector Dissipation 60 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%

Electrical Characteristics TC=25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units
ICES Collector Cut-off Current VCB=1400V, RBE=0 1 mA
ICBO Collector Cut-off Current VCB=800V, IE=0 10 µA
IEBO Emitter Cut-off Current VEB=4V, IC=0 1 mA
BVEBO Emitter-Base Breakdown Voltage IE=500µA, IC=0 6 V
hFE1 DC Current Gain VCE=5V, IC=1A 10
hFE2 VCE=5V, IC=6A 5 8
VCE(sat) Collector-Emitter Saturation Voltage IC=6A, IB=1.5A 3 V
VBE(sat) Base-Emitter Saturation Voltage IC=6A, IB=1.5A 1.5 V
tSTG* Storage Time VCC=200V, IC=6A, RL=33Ω 3 µs
tF* Fall Time IB1=1.2A, IB2= - 2.4A 0.2 µs
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed

Thermal Characteristics TC=25°C unless otherwise noted

Symbol Parameter Typ Max Units
RθjC Thermal Resistance, Junction to Case 2.08 °C/W

©2001 Fairchild Semiconductor Corporation Rev. A2, May 2001

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FJAF6810
Typical Characteristics

10 100
IB=2.0A
VCE = 5V
IC [A], COLLECTOR CURRENT

8 0 0
Ta = 125 C Ta = 25 C

hFE, DC CURRENT GAIN

6
0
Ta = - 25 C
IB=0.6A 10

4 IB=0.4A

IB=0.2A
2

0 1
0 2 4 6 8 10 12 14 0.1 1 10 100

VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

100 10

IC = 5 IB IC = 3 IB
VCE(sat) [V], SATURATION VOLTAGE
VCE(sat) [V], SATURATION VOLTAGE

10

0
Ta = 25 C
1 0
Ta = 125 C
0 Ta = 125 C
0
Ta = 25 C
0.1
0
Ta = - 25 C 0
0.1 Ta = - 25 C

0.01 0.01
0.1 1 10 0.1 1 10

IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage

14 10

VCE = 5V VCC = 200V,

12 IC = 6A, IB1 = 1.2A
IC [A], COLLECTOR CURRENT

tSTG & tF[µs], SWITCHING TIME

10 tSTG
1

6
tF
0.1
4

0 0 0
Ta = 125 C 25 C - 25 C
2

0 0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 10

VBE [V], BASE-EMITTER VOLTAGE IB2 [A], REVERSE BASE CURRENT

Figure 5. Base-Emitter On Voltage Figure 6. Resistive Load Switching Time

©2001 Fairchild Semiconductor Corporation Rev. A2, May 2001

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FJAF6810
Typical Characteristics (Continued)

100 10

VCC = 200V, VCC = 200V,

IC = 6A, IB2 = - 2.4A IB1 = 1.0A, IB2 = - 2.4A

tSTG & tF [µs], SWITCHING TIME

tSTG & tF[µ s], SWITCHING TIME

10

tSTG
tSTG

1 1

tF
tF
0.1

0.01 0.1
1 10 1 10

IB1 [A], FORWARD BASE CURRENT IC [A], COLLECTOR CURRENT

Figure 7. Resistive Load Switching Time Figure 8. Resistive Load Switching Time

30 100

RB2 = 0, IB1 = 15A

VCC = 30V, L = 200µ H IC (Pulse) t = 100ms t = 10ms
25
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT

10
IC (DC) t = 1ms
20

15 1

10

VBE(off) = - 6V 0.1

5 o
TC = 25 C
VBE(off) = - 3V
Sigle Pulse
1 0.01
10 100 1000 10000 1 10 100 1000 10000

VCE [V], COLLECTOR-EMITTER VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 9. Reverse Bias Safe Operating Area Figure 10. Forward Bias Safe Operating Area

80

70
PD [W], POWER DISSIPATION

60

50

40

30

20

10

0
0 25 50 75 100 125 150 175 200

C o
T [ C], CASE TEMPERATURE

Figure 11. Power Derating

©2001 Fairchild Semiconductor Corporation Rev. A2, May 2001

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FJAF6810
Package Demensions

TO-3PF

5.50 ±0.20
3.00 ±0.20
4.50 ±0.20

15.50 ±0.20 ø3.60 ±0.20

(1.50)

10.00 ±0.20

°
10

23.00 ±0.20
26.50 ±0.20

22.00 ±0.20
0.85 ±0.03
14.50 ±0.20
16.50 ±0.20

16.50 ±0.20

1.50 ±0.20
2.00 ±0.20

2.50 ±0.20

2.00 ±0.20
2.00 ±0.20 2.00 ±0.20 2.00 ±0.20
14.80 ±0.20

4.00 ±0.20

+0.20
3.30 ±0.20
0.75 –0.10

5.45TYP 5.45TYP +0.20

[5.45 ±0.30] [5.45 ±0.30] 0.90 –0.10
5.50 ±0.20
3.30 ±0.20

2.00 ±0.20

Dimensions in Millimeters

©2001 Fairchild Semiconductor Corporation Rev. A2, May 2001

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TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.

ACEx™ FAST® OPTOPLANAR™ SuperSOT™-3

Bottomless™ FASTr™ PACMAN™ SuperSOT™-6
CoolFET™ FRFET™ POP™ SuperSOT™-8
CROSSVOLT™ GlobalOptoisolator™ PowerTrench® SyncFET™
DenseTrench™ GTO™ QFET™ TinyLogic™
DOME™ HiSeC™ QS™ UHC™
EcoSPARK™ ISOPLANAR™ QT Optoelectronics™ UltraFET®
E2CMOS™ LittleFET™ Quiet Series™ VCX™
EnSigna™ MicroFET™ SLIENT SWITCHER®
FACT™ MICROWIRE™ SMART START™
FACT Quiet Series™ OPTOLOGIC™ Stealth™

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2001 Fairchild Semiconductor Corporation Rev. H2