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Reliable Operation D D
Improved Ruggedness S
G D
l Repetitive Avalanche Capability for Robustness G
and Reliability
S
TO-247AC
G D S
Gate Drain Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
nH 6mm (0.25in.) G
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energyd ––– 140 mJ
EAR Repetitive Avalanche Energy c ––– 33 mJ
VDS(Avalanche) Repetitive Avalanche Voltagec 240 ––– V
IAS Avalanche Currentd ––– 39 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS @ TC = 25°C Continuous Source Current ––– ––– 65 MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current ––– ––– 260 integral reverse
(Body Diode)c p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 46A, VGS = 0V e
trr Reverse Recovery Time ––– 100 150 ns TJ = 25°C, IF = 46A, VDD = 50V
Qrr Reverse Recovery Charge ––– 430 640 nC di/dt = 100A/µs e
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IRFP4227PbF
1000
VGS VGS
TOP 15V TOP 15V
10V 10V
ID, Drain-to-Source Current (A)
7.0V
10
10
1000.0 4.0
ID = 46A
100.0 3.0
(Normalized)
TJ = 175°C
10.0 2.0
0.1
0.0
3.0 4.0 5.0 6.0 7.0 8.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
1000 1000
L = 220nH L = 220nH
900 C = 0.4µF C = Variable
100°C 800 100°C
800 25°C 25°C
Energy per pulse (µJ)
Energy per pulse (µJ)
700
600
600
500
400
400
300 200
200
100 0
110 120 130 140 150 160 170 130 140 150 160 170 180 190
VDS, Drain-to -Source Voltage (V) ID, Peak Drain Current (A)
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage Fig 6. Typical EPULSE vs. Drain Current
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IRFP4227PbF
1400 1000.0
L = 220nH
1200
1000
C= 0.2µF TJ = 175°C
800
10.0
600
400
1.0
TJ = 25°C
200
VGS = 0V
0
0.1
25 50 75 100 125 150
0.2 0.4 0.6 0.8 1.0 1.2
Temperature (°C)
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical EPULSE vs.Temperature Fig 8. Typical Source-Drain Diode Forward Voltage
8000 20
VGS = 0V, f = 1 MHZ ID= 46A
Ciss = Cgs + Cgd, Cds SHORTED
VDS = 160V
Ciss 12
4000
8
2000
Coss
4
Crss
0
0
0 20 40 60 80 100 120
1 10 100 1000
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
70 1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
60
1µsec
ID, Drain-to-Source Current (A)
100
ID , Drain Current (A)
50 100µsec 10µsec
40
10
30
20
1
Tc = 25°C
10
Tj = 175°C
Single Pulse
0 0.1
25 50 75 100 125 150 175 1 10 100 1000
TC , CaseTemperature (°C) VDS , Drain-to-Source Voltage (V)
Fig 11. Maximum Drain Current vs. Case Temperature Fig 12. Maximum Safe Operating Area
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IRFP4227PbF
600
0.16
RDS (on), Drain-to -Source On Resistance (Ω)
0.08 300
TJ = 125°C
200
0.04
100
TJ = 25°C
0.00 0
5 6 7 8 9 10 25 50 75 100 125 150 175
VGS, Gate-to-Source Voltage (V) Starting TJ, Junction Temperature (°C)
Fig 13. On-Resistance Vs. Gate Voltage Fig 14. Maximum Avalanche Energy Vs. Temperature
5.0 200
ton= 1µs
Duty cycle = 0.25
VGS(th) Gate threshold Voltage (V)
4.5
160 Half Sine Wave
3.0
80
2.5
40
2.0
1.5 0
-75 -50 -25 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175
Fig 15. Threshold Voltage vs. Temperature Fig 16. Typical Repetitive peak Current vs.
Case temperature
1
D = 0.50
Thermal Response ( Z thJC )
0.1 0.20
0.10 R1 R2 R3
R1 R2 R3 Ri (°C/W) τi (sec)
0.05 τJ
τJ
τC
τ 0.08698 0.000074
τ1 τ2 τ3
0.02 τ1 τ2 τ3 0.2112 0.001316
0.01
0.01 Ci= τi/Ri 0.1506 0.009395
Ci τi/Ri
Notes:
SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1
VGS=10V *
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
Recovery Body Diode Forward
-
+ Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Ripple ≤ 5% ISD
V(BR)DSS
15V
tp
L DRIVER
VDS
RG D.U.T +
V
- DD
IAS A
VGS
20V
tp 0.01Ω
I AS
Fig 19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms
Id
Vds
Vgs
L
VCC
DUT Vgs(th)
0
1K
Fig 20a. Gate Charge Test Circuit Fig 20b. Gate Charge Waveform
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IRFP4227PbF
A
RG C PULSE A
DRIVER
PULSE B
VCC
B
Ipulse
RG
DUT
tST
Fig 21a. tst and EPULSE Test Circuit Fig 21b. tst Test Waveforms
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IRFP4227PbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.18mH, RG = 25Ω, IAS = 39A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Rθ is measured at TJ of approximately 90°C.
Half sine wave with duty cycle = 0.25, ton=1µsec. Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 2/06
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