SEMICONDUCTOR KTC2022D/L

TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION.

FEATURES A I
C J
Low Collector-Emitter Saturation Voltage
DIM MILLIMETERS
: VCE(sat)=-2.0V(Max.).

D
A _ 0.2
6.60 +
B _ 0.2
6.10 +
_ 0.2
Complementary to KTA1042D/L. C
D
5.0 +
_ 0.2
1.10 +

B
E _ 0.2
2.70 +
F _ 0.1
2.30 +
H 1.00 MAX

M
Q

K
_ 0.2

E
I 2.30 +

O
J _ 0.1
0.5 +
H P K _ 0.20
2.00 +
L _ 0.10
0.50 +
MAXIMUM RATING (Ta=25 ) F F L
M 0.91+_ 0.10
O _ 0.1
0.90 +
1 2 3
CHARACTERISTIC SYMBOL RATING UNIT P _ 0.10
1.00 +
Q 0.95 MAX

Collector-Base Voltage VCBO 100 V 1. BASE

2. COLLECTOR
Collector-Emitter Voltage VCEO 100 V 3. EMITTER

Emitter-Base Voltage VEBO 5 V

Collector Current IC 5 A DPAK
Base Current IB 0.5 A
Collector Power Dissipation (Tc=25 ) PC 20 W
Junction Temperature Tj 150 A
C
I
J

Storage Temperature Range Tstg -55 150

D
DIM MILLIMETERS

B
A 6.60 +_ 0.2
B 6.10 +_ 0.2
_ 0.2
5.0 +
Q

K
D _
1.10 + 0.2
H P
E 9.50 +_ 0.6
G _ 0.1
E
F 2.30 +
G 0.76 +_ 0.1
H 1.0 MAX
I 2.30 +_ 0.2
J 0.5 +_ 0.1
F F L _
K +
2.0 0.2
L 0.50 +_ 0.1
P _ 0.1
1.0 +
1 2 3 Q 0.90 MAX

1. BASE
2. COLLECTOR
3. EMITTER

IPAK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=100V, IE=0 - - 100 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 1.0 mA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=50mA, IB=0 100 - - V
hFE(1) (Note) VCE=5V, IC=1A 70 - 240
DC Current Gain
hFE(2) VCE=5V, IC=4A 20 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=4A, IB=0.4A - - 2.0 V
Base-Emitter Voltage VBE VCE=5V, IC=1A - - 1.5 V
Transition Frequency fT VCE=5V, IC=1A - 30 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 40 - pF
Note : hFE(1) Classification 0:70~140, Y:120~240.

2003. 3. 27 Revision No : 4 1/2

 KTC2022D/L

I C - VCE VCE(sat) - I C

COLLECTOR-EMITTER SATURATION
5.0 2
0 200 COMMON EMITTER
30 25
0 150
COLLECTOR CURRENT I C (A)

I C /I B =10
100 1
4.0

VOLTAGE VCE(sat) (V)

C
0.5

5
=7
3.0 50 0.3

Tc
2.0 Tc=25 C
I B =20mA Tc=-25 C
0.1
COMMON EMITTER
1.0
Tc=25 C
0.05
0
0 0.03
0 1.0 2.0 3.0 4.0 5.0 6.0 0.01 0.03 0.1 0.3 1 3 10

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A)

h FE - I C SAFE OPERATING AREA

500 20
I C MAX.(PULSED) *
300 10
DC CURRENT GAIN h FE

COLLECTOR CURRENT I C (A)

I C MAX.
(CONTINUOUS)
5
Tc=75 C

1m *
10
10 S *
100 3

0m
mS
S*
Tc=25 C DC
O
Tc PE
50 Tc=-25 C =2 RA
5 TI
C ON
30 1

0.5
COMMON EMITTER * SINGLE NONREPETITIVE

VCEO MAX.
VCE =5V 0.3 PULSE Tc=25 C
10 CURVES MUST BE DERATED
0.01 0.03 0.1 0.3 1 3 10 LINEARLY WITH INCREASE
IN TEMPERATURE
COLLECTOR CURRENT I C (A) 0.1
2 5 10 30 100 300

COLLECTOR-EMITTER VOLTAGE VCE (V)

Pc - Ta
24
COLLECTOR POWER DISSIPATION

1 Tc=25 C
1
20 2 Ta=25 C

16
PC (W)

12

4
2
0
0 25 50 75 100 125 150

AMBIENT TEMPERATURE Ta ( C)

2003. 3. 27 Revision No : 4 2/2