Basic Electronics - JFET nal FT, The io the n-type as Junction Flold Effect Transistor, JFET t nannel FET. A p-type material | ddod to the ype material i po of FET to understand be fabrication of Nchannel FET. 4 Field Effect Transistor. For mod by diffusion on on on which P-type materia ned to draw a sin jon for gate terminal, Th G _—Gate These tro gate area between ¢ Balad as 2 channel, The through this cha ine a ae form of the FE ‘ re = Aput JFETs have only depletion ioe wit be discussed in the operation of MOSFETs ‘operation. Let us consider that there is no potential applies Vop is applied between drain and source. Now, its maximum as the channel width is more. terminal Veg is reverse biased. This increases layers grow, the cross-section of the channel decreas! decreases. and source terminals 2nd @ poy. ws from drain to $0 Ct ‘ .d between gate an d between gate a current Ip flo Let the voltage applies the depletion width, es and hence the drai iN CUTTEN Ip aise TEE hss rein current is turer Increased, a stage oocurs where both the deplelon layers tou ‘each other, and prevent the current Ip low. This is clearly shown in t source(s) is called as “Pinch off voltage”. It rrent is a function fe voltage at which both these ¢ Ip indicated as VP. The drain current is literally nil at this point. Hen f reverse bias voltage at gate. nt, FET Is called as the voltage controlled device. This jnce gate voltage controls the drain curr more clearly understood from the drain ct istics curve. which we can obtain the obtain the characteristic curve obtain these characteristics is given below. to summarize the function FET. The circuit of FET tPinch off (Saturation region) can —et Pinch off voltage 4s Pinch off point Breakdown regionagainst drain source voltage Vos \ drain current to teristics for such various Inpu jotted for ‘The overall drain charact drain characoistcs a VGs. different values of gate source voltage voltages iS as given under. o& Drain Characteristics of FET 1p Vos) rent, FET is called as a Voltage controlled he drain characteristics Transconductance and As the negative gate voltage controls the drain cur device. The drain characteristics indicate the performance of a FET. TI plotted above are used to obtain the values of Drain resistance, ‘Amplification Factor.“Drain (D) Gate (4) yurce (5) Structure of N-channel FET Ohmic contacts are made al the two wrids of the 14 and the drain Operation of N-channel FET Before going Into the operation of ne should understand formed. For th uppose that the vollagy at ga ol say V the voltage at drain terminal say Vy 1 appliod, Lat this bo the ca * In case 1, Whon Vog is rovorse biasbd and Vp 1 ppl betwoon P and N lay » expand r s attracts the holes from the p-type layer towards the gate terminal In caso 2, Ino tiveterminaltodrainandne positiveterm 9 applied, the electrons flow from source Let us now consider the following figure, to undorgo at drain terminal allow st terminal makes the depletion ayer arow and the VEEN Beer * terinal, Suppose the point at source {601 of the channel al B. Which means, The supply at gate the drain current from source to dralt point at drain terminal is A, then the resistance the terminal A is greater than the voltage drop at the vaVe J will be such that the voltage dr n of the channel. So, the re gh the lenat! Hence the voltage drop is being progressive throu biasing effect is stronger at drain terminal than at the source (er yer tends to penetrate more into the ct int A than at p applied. The following figure explains this, minal. This Is why anne! at P int B, when both Vao and \ have understood the behavior of FET, let us go through the real operation of FET. ‘of Operation role in the operation of FET, the name depletion lation layer plays an important plies. We have another mode called enhancement méde of operation, whichFETS have af fovonced Fer eration To ¢ MOSFET stang, “we Semeonducor Gate Field Effect tq tet Tr Modes of pean! tsi Constructioy asiGrey type and Neypeia The followin, iSubstrate Ss CHANNEL Ss Source e at gate bontrols the operation o is case, both ative voltages can be applied on the gale as ated from thewotage. ‘enhanc win negative gate Dias ye t acts 08 @ bias vote of MOSFETS Classification 4 materials used sin the £0 p-ch= P-channel ® Nech=N- channel jon, let us BBter the cla She N-channel MOS! MOSFET are as given b Ete are simply caled as NMOS. The symbs lowSymbols sof NC hannel MOSFET Go Depletion Mode The P ISFETs vs PMO! Symbols of PChannel MOSFET se | | : Enhancement Mode Depletion Mode Now, let us go through the constr N-channel Mi NChannel MOBFET is considered tion as tt there is no Need to mention that the study of ains the ott Construction of N- Channel MOSFET Hor any N-channel MOSFE fy two heavily doped Netype regions are diffused, » type substrate is taken Intoca diffusion t0 form Diffused Channel P-Type Substrate Structure of N-channel MOSFET om dloxde (SI0,) is grown over the entire surface and Holes We ore (or arain and source terminals, A conducting layer ‘ha entive channel, upon this SIO: layer from source to drain SiO, substrate is connected to the common or ground A thin layer of Sil made to draw ohmic co of aluminum is aid over ‘which constitutes the’ gate. The terminals Because of its construction, the MOSFET 85% of the occupancy when compared to bi operated in modes, They are depletion a has a very less chip area than BJT, which is ipolar junction transistor. This device can be J enhancement modes. Let us try to get into N- [depletionmodedepletionmode MOSFET lave an idea that there is no PN junction present between i i ate Bongo a FET: We contain coesive: rat, he. cused channel LtegionsbetweentwoN+regions, the insulating dielectric “SiO; and etal layer ofthe gate together form a parallel plats capacitor Bs to be worked in depletion mode, the , the gate terminal I while drain is at positive potential, as shown in the ene ee .Working’of MOSFET in’depletion mode When no voltage is applied between gate and source, some current flows due to the voltage between drain and source. Let some negative voltage is applied at Ves. Then the minority carriers i.e. holes, get attracted and setle near SIO; layer. But the majority carriers, i.e., electrons get repelled. With some amount of negative potential atVsaa certain amount of drain current ls flows through source to drain. When this negative potential is further increased, the electrons get depleted and the current le decreases. Hence the more negative the applied Veo, the lesser the value of drain current lp will be. The channel nearer to drain gets more depleted than at source likeinFETHikeinFET and the current flow decreases due to thi is called as depletion mode MOSFET. Working of N-Channel MOSFET EnhancementModeEnhancementModeneoment mode, We oa ch a pe weed nhancane ucieT WO ‘So, let us consid ‘own in the following figue ‘The same MOSFET car polarities of the voltage Vee Voltage Ves being positive as shi D + 9 Vp af L! Ae) VeetL SiO, | CHANNEL s | ae) Working‘of MOSFET in Enhancement mode When no voltage is applied between gate and source, some current voltage between drain and source. Let some positive voltage Is applied at V the minority cariers i.e. holes, get repelied and the majority carriers L@. electron attracted towards the SIO, layer With some amount of positive potential at Vas @ certain amount of drain current le flow through source to drain, When this positive potential ig further increased, th tl Increases due to the flow of electrons from source and th¢se are pushed idue to the voltage applied at Veo, Hence the more positive the applied Vso, the Value of drain current ls wil be, The current flow gets enhanced due to the ih electron flow better than in depletion mode, Hence this mode is termeDiffused Channel N-Type Substrate Structure of P-channel MosFeT Working of PMos n Enhancement Mode When the gate terminal is given Voltage Veo, then due to the P+ reg the diffused P channel and the PM, When the gate terminal voltage Vee, then due to the re current reduces. Thu differs, the working is similar in both t yoltage polarity both of the types can b. his can be better understood by Characteristics us PMOS works in Depletion Modent Ip and the for different nthe drain curre! 7 are drawn between the drat fhe drain characteristics of a MOSFE ‘The drain characteristics o' oristic curve 18 a8 Sho drain source voltage Vos. The charac values of inputs, Drain Characteristics of MOSFET Ip (mA) -10. Ves = —200 8 Ves = —16¥ Ves = -120 6 —8v Vos) - -10 -15 -20 -25 Actually When Vos is increased, the drain current lp should increase, but due to the applied Ves, the drain current Is controlled at certain level. Hence the gate current controls the output drain current. Transfer Characteristics insfer| characteristics define the change in the value of Veewith the change fandesin both depletion and enhancement modes. The below transfer feristic curve is drawn for drain current versus gate to source voltage.Enhancement Mode Ip(ON) Comparison between BJT, FET and MOSFET Now that we h propertie ows) yee ite se* || Geer | MOSFET i Device type | Cur tay Current flow Bipola inbeke Terminals | interchangeable | !ter le angeabl Operational No modes | Enhancement and petates or | Depletion modes,| Very high Input | High y hig impedance | Low | i! Naren | Moderate Moderate Operational | | | eh pee Low Modo | ’ | | Hoiee High Low Low Thermal | stability Low Better High So far, we have discussed various electronic components and their types along with their construction and working. All of these components have various uses in the electronics field. To have a practical knowledge on how th mponi sed In practical circuits, please refer to the ELECTRONIC CIRCUITS tutorial