Taiwan Semiconductor

Content
1. Absolute Maximum Ratings ................................................................................................................................... 3
1.1 Drain-Source Voltage (VDS) ............................................................................................................................. 3
1.2 Gate-Source Voltage (VGS) .............................................................................................................................. 3
1.3 Continuous Drain Current (ID) ......................................................................................................................... 3
1.4 Pulsed Drain Current (IDM) .............................................................................................................................. 4
1.5 Single Pulse Avalanche Current (IAS) ............................................................................................................... 4
1.6 Single Pulse Avalanche Energy (EAS) ............................................................................................................... 4
1.7 Total Power Dissipation (PD) ........................................................................................................................... 5
1.8 Operating Junction and Storage Temperature Range (TJ,TSTG) ...................................................................... 5
2. Thermal Performance ............................................................................................................................................ 6
2.1 Junction To Case Thermal Resistance (RθJC) .................................................................................................. 6
2.2 Junction To Ambient Thermal Resistance (RθJA) ............................................................................................. 6
3. Electrical Specifications .......................................................................................................................................... 7
3.1 Drain-Source Breakdown Voltage (BVDSS) ...................................................................................................... 7
3.2 Gate Threshold Voltage (VGS(TH)) ........................................................................................................... 7
3.3 Gate-Source Leakage Current (IGSS) ....................................................................................................... 8
3.4 Drain-Source Leakage Current (IDSS) ...................................................................................................... 8
3.5 Drain-Source On-State Resistance (RDS(ON))............................................................................................ 8
3.6 Forward Transconductance (gfs) ........................................................................................................... 9
4. Dynamic................................................................................................................................................................. 10
4.1 Total Gate Charge (Qg) .................................................................................................................................. 10
4.2 Capactance (Ciss, Coss, Crss) ............................................................................................................................ 10
4.3 Gate Resistance (Rg)...................................................................................................................................... 10
5. Switching Time ...................................................................................................................................................... 11
5.1 Switching Time (Td(on) ,Tr ,Td(off) ,Tf) ............................................................................................................... 11
6. Source-Drain Diode Characteristics...................................................................................................................... 12
6.1 Forward Voltage (VSD) ................................................................................................................................... 12
6.2 Body Diode Reverse Recovery (trr,Qrr) .......................................................................................................... 12
7. Characteristics Curves ........................................................................................................................................... 13
Output Characteristics ............................................................................................................................... 13
Transfer Characteristics ............................................................................................................................. 13
Gate-Source Voltage vs. Gate Charge .......................................................................................................... 14
On-Resistance vs. Junction Temperature ..................................................................................................... 15

1 Version: A1611