Taiwan Semiconductor

MOSFET datasheet parameters introduction

Introduction
When choosing a MOSFET, parameters that are focused on by most engineers intuitively are VDS,
RDS(on), ID. However, in power systems, it is significant to pick up a suitable MOSFET based on
different applications. In this application note, Taiwan Semiconductor (TSC) introduces the definition
of every single parameter of a MOSFET, and from chapter 3, TSC also explains how each parameter is
realized, hoping this would help designers on the power projects.

1. Absolute Maximum Ratings

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT Notes
Drain-Source Voltage VDS 30 V 1.1
Gate-Source Voltage VGS ±20 V 1.2
(Note 1) TC = 25°C 39
Continuous Drain Current ID A 1.3
TA = 25°C 11
Pulsed Drain Current IDM 156 A 1.4
(Note 2)
Single Pulse Avalanche Current IAS 15.6 A 1.5
(Note 2)
Single Pulse Avalanche Energy EAS 36.5 mJ 1.6
TC = 25°C 33
Total Power Dissipation PD W
TC = 125°C 6.6
1.7
TA = 25°C 2.6
Total Power Dissipation PD W
TA = 125°C 0.5
Operating Junction and Storage Temperature range TJ, TSTG - 55 to +150 °C 1.8

1.1 Drain-Source Voltage (VDS )

VDS represents MOSFET absolute maximum voltage between Drain and Source. In operations,
voltage stress of Drain-Source should not exceed maximum rated value.

1.2 Gate-Source Voltage ( VGS )

VGS represents operating driver voltage between Gate and Source. In operations, voltage stress of
Gate-Source should not exceed maximum rated value.

1.3 Continuous Drain Current ( ID )

ID represents MOSFET’s continuous conduction current and could be calculated by below equation.
TJ  TC
ID 
TJ = Junction Temperature RJC  RDS (ON )  K
TC = Case Temperature
RDS(ON) = Drain-Source On-State Resistance
RθJC = Junction to Case Thermal Resistance
K = On-Resistance vs. Junction Temperature

3 Version: A1611