BAV70W, SBAV70W

Dual Switching Diode

Common Cathode
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and www.onsemi.com
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*

SOT−323
MAXIMUM RATINGS (TA = 25°C)
CASE 419
Rating Symbol Max Unit STYLE 5
Reverse Voltage VR 100 V
ANODE
Forward Current IF 200 mA 1
3
Peak Forward Surge Current IFM(surge) 500 mA
CATHODE 2
Stresses exceeding those listed in the Maximum Ratings table may damage ANODE
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
THERMAL CHARACTERISTICS
3
Characteristic Symbol Max Unit
Total Device Dissipation FR− 5 Board PD 200 mW A4 MG
(Note 1) G
TA = 25°C
Derate above 25°C 1.6 mW/°C
1 2
Thermal Resistance, RqJA 625 °C/W
Junction−to−Ambient A4 = Specific Device Code
M = Date Code
Total Device Dissipation PD 300 mW
G = Pb−Free Package
Alumina Substrate (Note 2) TA = 25°C
(Note: Microdot may be in either location)
Derate above 25°C 2.4 mW/°C
Thermal Resistance, RqJA 417 °C/W
Junction−to−Ambient
ORDERING INFORMATION

Junction and Storage Temperature TJ, Tstg −55 to °C Device Package Shipping†
+150 BAV70WT1G SOT−323 3,000 / Tape & Reel
1. FR− 5 = 1.0  0.75  0.062 in. (Pb−Free)
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. SBAV70WT1G SOT−323 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2015 1 Publication Order Number:

April, 2015 − Rev. 8 BAV70WT1/D
 BAV70W, SBAV70W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
Reverse Breakdown Voltage V(BR) V
(I(BR) = 100 mA) 100 −

Reverse Voltage Leakage Current (Note 3) IR

(VR = 100 V) − 1.0 mA
(VR = 50 V) − 100 nA
Forward Voltage VF mV
(IF = 1.0 mA) − 715
(IF = 10 mA) − 855
(IF = 50 mA) − 1000
(IF = 150 mA) − 1250
Diode Capacitance CD pF
(VR = 0 V, f = 1.0 MHz) − 1.5
Reverse Recovery Time trr ns
(IF = IR = 10 mA, RL = 100 W, IR(REC) = 1.0 mA) (Figure 1) − 6.0
Forward Recovery Voltage VRF V
(IF = 10 mA, tr = 20 ns) (Figure 2) − 1.75
3. For each individual diode while the second diode is unbiased.

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 BAV70W, SBAV70W

BAV70

RS = 50 W
SAMPLING
OSCILLOSCOPE
IF
RL = 50 W

tr tp

10%
+IF
trr
OUTPUT PULSE

VR
90% 10%OF
100W
VR
INPUT PULSE

Figure 1. Recovery Time Equivalent Test Circuit

1 KW 450 W

RS = 50 W
SAMPLING
BAV70
OSCILLOSCOPE
RL = 50 W

V
90%

VFR

10%
t

tr tp
INPUT PULSE OUTPUT PULSE t
Figure 2.

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 BAV70W, SBAV70W

100 10
TA = 150°C

IR , REVERSE CURRENT (μA)

IF, FORWARD CURRENT (mA)

TA = 125°C
1.0
10

TA = 85°C TA = 85°C
0.1

TA = 25°C TA = 55°C
1.0

TA = -40°C 0.01

TA = 25°C
0.1 0.001
0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50
VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Forward Voltage Figure 4. Leakage Current

1.0
CD , DIODE CAPACITANCE (pF)

0.9

0.8

0.7

0.6
0 2 4 6 8
VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Capacitance

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 BAV70W, SBAV70W

PACKAGE DIMENSIONS

SC−70 (SOT−323)
CASE 419−04
ISSUE N

NOTES:
D 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
e1 2. CONTROLLING DIMENSION: INCH.

MILLIMETERS INCHES
3 DIM MIN NOM MAX MIN NOM MAX
A 0.80 0.90 1.00 0.032 0.035 0.040
HE E A1 0.00 0.05 0.10 0.000 0.002 0.004
1 2 A2 0.70 REF 0.028 REF
b 0.30 0.35 0.40 0.012 0.014 0.016
c 0.10 0.18 0.25 0.004 0.007 0.010
D 1.80 2.10 2.20 0.071 0.083 0.087
b E 1.15 1.24 1.35 0.045 0.049 0.053
e 1.20 1.30 1.40 0.047 0.051 0.055
e e1 0.65 BSC 0.026 BSC
L 0.20 0.38 0.56 0.008 0.015 0.022
HE 2.00 2.10 2.40 0.079 0.083 0.095
STYLE 5:
A c PIN 1. ANODE
A2 2. ANODE
3. CATHODE
0.05 (0.002) L
A1

SOLDERING FOOTPRINT*
0.65
0.65 0.025
0.025

1.9
0.075

0.9
0.035

0.7
0.028
SCALE 10:1 ǒinches
mm Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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PUBLICATION ORDERING INFORMATION

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