Bo-Sung-Dien-Tu-Tuong-Tu - Lecture-Ee08 - Mosfet - S-Circuit - (Cuuduongthancong - Com)

Lecture 08
MOSFET’s Circuit
Microelectronic circuits by 1
meiling CHEN
CuuDuongThanCong.com https://fb.com/tailieudientucntt
topics
1. Large-signal operation
2. FET circuits at DC
3. FET biasing schemes
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Large-signal operation
μCo w
ID = (vGS − Vt ) 2
2L
k n' w Load line: VDD = iD RD + vDS
ID = (vGS − Vt ) 2
2L
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dvo
Av ≡ v I =VIQ
dvI
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DC analysis
Example 4.2
μC o w
ID = (vGS − Vt ) 2
2L
Given I = 0.4mA ⇒ vGS = 1.2V
D
VD = 0.5V VS = I D RS + VSS
Vt = 0.7V ⇒ VS = I D RS − 2.5V
μ nCox = 100 μA / V 2 − 1.2 + 2.5
Rs = = 3.25k
L = 1μm 0.4m
w = 32 μm VDD = I D RD + VD
RD = ? ⇒ 2.5V = I D RD + VD
RS = ?
2.5 − 0.5
RD = = 5k
0.4m
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Example 4.3
Given
I D = 80 μA
Vt = 0.6V
μ nCox = 200 μA / V 2
L = 0. 8 μ m
w = 4 μm
VD = ?
R=?
μC o w
ID = (VD − Vt ) 2
2L
⇒ VD = 1V
VDD = 3V = I D R + VD
3 −1
⇒R= = 25k
0.08m
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Exercise 4.12
ID
R = 25k
VD 2
μC o w μC o w
ID = (VGS 2 − Vt ) 2 = (VD − Vt ) 2
2L 2L
QVD = 1V ∴ I D = 80μA
VDD = 3V = I D R2 + VD 2
⇒ VD 2 = 3 − 80 μ × 20k = 1.4V
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Example 4.4
let
Vt = 1V
K n′ (W / L) = 1mA / V 2
find RD = ?
vDS = VD = 0.1V ≤ VDD − Vt = 5 − 1 = 4

vDS ≤ vGS − Vt → ohmic region
μ n Co w
ID = [2(vGS − Vt )vDS − vDS
2
]
2L
→ I D = 0.395mA
5 − 0.1
RD = = 12.4k
0.395m
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Example 4.5
let if I D = 0.89mA
Vt = 1V VG =
10 M
10V = 5V VS = 6k × 0.89m = 5.34V
10 M + 10M
K n′ (W / L) = 1mA / V 2 → VGS < 0 contradiction
1 W
I D = k n' (VGS − Vt ) 2 if I D = 0.5mA
2 L
Assume FET VS = 6k × 0.5m = 3V
1
in saturation ⇒ I D = × 1× [(5 − I D × 6k ) − 1]2 → VGS = 2V
2
mode since → VD = 10 − 6k × 0.5m = 7V
⇒ 18I D2 − 25I D + 8 = 0
VG>0 → VD > VG − Vt
I D = 0.89mA, I D = 0.5mA
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Example 4.6 Design the circuit operate in saturation
Find the range of RD
1 'W
ID = k n (VGS − Vt ) 2
2 L
1
⇒ 0.5 = ×1× [VGS − (−1)]2
2
⇒ VGS = −2V
VDS ≥ VGS − Vt = −2 + 1 = −1
⇒ VD (max) = +4V
4
RD (max) = = 8k
0.5m
3
RD (min) = = 6k
0.5m
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Example 4.7
let
VGS ( p ) = −2.5V
Vnt = −V pt = 1V
VGS ( n ) = 2.5V
K n′ (W / L) vo = 0V
= K ′p (W / L) = 1mA / V 2 1
I DP = ×1[−2.5 − (−1)]2 = 1.125mA
2
First case : vI=0V
1
Q p on, Qn on I Dn = × 1[2.5 − 1]2 = 1.125mA
2
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Second case : vI=+2.5V
Qp off , Qn ohmic region
μ n Co w μ n Co w
ID = [2(vGS − Vt )vDS − vDS
2
]≈ (vGS − Vt )vDS
2L L
NOT gate
VGS = 5V VD = −2.44V = vo
I Dn = 1×1[5 − 1]VDS VDS = −2.44 + 2.5 = 0.06
= 1×1[5 − 1](− I Dn ×10k ) VGS − Vt = 5 − 1 = 4
⇒ I Dn = 0.244mA VDS ≤ VGS − Vt Ohmic region
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Second case : vI=-2.5V
Qp ohmic region , Qn off
NOT gate
VSG = 5V VD = vo = I Dp × 10k = 2.44V

I Dp = 1×1[5 − 1]VSD VSD = +2.5 − 2.44 = 0.06
= 1×1[5 − 1](2.5 − I Dp × 10k ) V − V = 5 − 1 = 4
SG t
⇒ I Dp = 0.244mA VSD ≤ VSG − Vt Ohmic region
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Exercise 4.16 Amplifier
Assume Qn up
k n' (Wn / Ln ) = k p' (W p / L p ) = 1(mA / V 2 )
Vtn = −Vtp = 1V
λ =0
find
iDN , iDP , vo
for
vI = 0V ,2.5V ,−2.5V 2nd case : vI=2.5V 3rd case : vI=-2.5V
Qn on Q p off Qn off Qp on
First case : vI=0V
Qn off Qp off
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Biasing method
• Fixed Bias by VGS
• Self Bias
• Biasing using Drain –to-Gate feedback resistor
• Biasing using constant current source
Biasing circuit
Small signal
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μ n Co w
ID = (vGS − Vt ) 2
2L
1. Device change ( Vt , Cox ,W L ) Change ID

2. Temperature change ( Vt , μ n )
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Example 4.9 Self Bias find
Vt = 1.5V Change MOSFET
K n′ (W / L) = 1mA / V 2
ΔI D = ? mA
k n' w 1
ID = (vGS − Vt ) = × 1× (vGS − 1.5) 2
2
2L 2
vGS = 7 − 10k × I D
⇒ I D = 0.455mA
when
Good biasing scheme
Vt = 1V I D ↑⇒ I D RS ↑⇒QVG fixed ⇒ VGS ↓
K n′ (W / L) = 1mA / V 2 k n' W
Q ID = (vGS ↓ −Vt ) 2 ⇒ I D ↓
I D = 0.5mA 2L
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Self Bias
I D ↑⇒ VS ↑⇒ VGS ↓⇒ I D ↓
Good biasing scheme
'
k w
ID = (vGS − Vt ) 2
n
2L
VGS = − I D RS
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Exercise 4.21 Drain –to-Gate feedback bias
k n' w
parameters ID = (VGS − Vt ) 2
2L
VDD = 5V 1
0.5m = × 1× (VGS − 1) 2
Vt = 1V 2
⇒ VGS = 2V
K n′ (W / L) = 1mA / V 2
requirement VGS = VDS = VDD − I D RD
I D = 0.5mA VGS = VDS = 5 − I D × RD
find 2V = 5 − 0.5 × RD
RD , VD ⇒ RD = 6k
VGS = VDS ⇒ saturation
I D ↑⇒ VD = VDD − I D RD ⇒ VD ↓
⇒ VGS ⇒ I D ↓
Good biasing scheme
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Constant current bias
VDD − VGS
I REF = I D1 = = I D2
R
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Lecture 08

vDS = VD = 0.1V ≤ VDD − Vt = 5 − 1 = 4

VSG = 5V VD = vo = I Dp × 10k = 2.44V

1. Device change ( Vt , Cox ,W L ) Change ID

Good biasing scheme

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