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One Die
Both Die
Equal Power
MD7002,A,B
Total Device Dissipation PD
@ Ta = 25°C 575 625 mW CASE 654-07, STYLE 1
Derate above 25°C 3.29 3.57 mW/°C
Total Device Dissipation pd DUAL
@ TC = 25°C 1.8 2.5 Watts
Derate above 25°C 10.3 14.3 mW/°C AMPLIFIER TRANSISTOR
Operating and Storage Junction TJ- T stg -65 to +200 °C NPN SILICON
Temperature Range
THERMAL CHARACTERISTICS
Both Die
Characteristic Symbol One Die Equal Power Unit
Thermal Resistance, Rwc 97 70 °C/W
Junction to Case
Thermal Resistance, RfljAd) 304 280 °c/w Refer to 2N2919 for graphs.
Junction to Ambient
Junction to Junction to
Ambient Case
Coupling Factors 84 44 %
(1) R&JA is measured with the device soldered into a typical printed circuit board.
MATCHING CHARACTERISTICS
DC Current Gain Ratio(3) hFE1 /n FE2 —
dC = 100 pAdc, Vce = 10 Vdc) MD7002A 0.75 - 1.0
MD7002B 0.85 1.0
5-79