BC171 Collector-Emitter Voltage 174 171 172 65 45 25 Vdc VCEO BC172 Collector-Base Voltage VCBO 80 50 30 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous ic 100 mAdc CASE 29-02, STYLE 17 TO-92 (TO-226AA) Total Device Dissipation @ T/\ = 25°C PD 350 mW Derate above 25°C 2.8 mW/°C AMPLIFIER TRANSISTORS Total Device Dissipation @ Tc = 25°C pd 1.0 Watt Derate above 25°C 8.0 mW/°C NPN SILICON Operating and Storage Junction Tj, T s tg -55 to +150 °c Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case Rwc 125 °C/W Thermal Resistance, Junction to Ambient Rfljc 357 °c/w Refer to BC546 for graphs.
ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted)
Characteristic Type Symbol Typ. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CE0 V dC = 1 mA, Ib = 0) BC174 65 BC171 •45 BC172 25 Emitter-Base Breakdown Voltage V(BR)EB0 V (l E = 10uA, Ic = 0) BC171 6 BC172 6 BC174 6 Collector Cutoff Current ices nA (Vce = 70 V, Vbe = 0) BC174 0.20 15 (Vce = 50 v, vbe = o) BC171 0.20 15 (v C e = 35 v, vbe = o> BC172 0.20 15
(VCE = 30 V, Ta = 125°C) BC174 4 uA
BC171 4 BC172 4 ON CHARACTERISTICS DC Current Gain hFE dC = 10uA, VCE = 5 V) BC171A/2A/4A 90 BC171B/2B/4B 150 BC172C 270
BC171B/2B/4B 180 BC172C 300 Collector-Emitter Saturation Voltage VCE(sat) V dC = 10 mA, Ib = 0.5 mA) 0.09 0.25 (IC = 100 mA, Ib = 5 mA) 0.2 0.60 (IC = 1 mA, Ib = See Note 1) 0.3 0.6 Base-Emitter Saturation Voltage VBE(sat) V (IC = 10 mA, Ib = 0.5 mA) 0.7 Base-Emitter On Voltage VBE(on) V dC = 2 mA, V C E = 5 V) 0.55 0.70 (IC = 10 mA, VCE = 5 V) 0.77 NOTE 1 : Ib is value for which Ic = 11 mA at Vce = 1 V.
2-62 BC174.BC171, BC172
ELECTRICAL CHARACTERISTICS (continued) (Ta = 25 °C unless otherwise noted)
Characteristic Type Symbol Min. | Typ. | Max. | Unit DYNAMIC CHARACTERISTICS, SMALL SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fT MHz dC = 10 mA, Vce = 5 V, f = 100 MHz) BC171 150 300 BC172 150 300 BC174 150 300 Output Capacitance Cobo PF (VcB = 10 V, lc = 0, f = 1 MHz) 1.7 4.5
Input Capacitance Cjbo PF
(Vbe = 0.5 V, lc = 0, f = 1 MHz) 10 Input Impedance hie Kohm (JC = 2 mA, Vce = 5 V, f = 1 KHz) BC171A/2A/4A 1.6 2.7 4.5 BC171B/2B/4B 3.2 4.5 8.5 BC172C 6.0 8.7 15.0 -4 Voltage Feedback Ratio hre X10 dC = 2 mA, Vce = 5 V, f = 1 KHz) BC171A/2A/4A 1.5 BC171B/2B./4B 2.0 BC172C 3.0 Small-Signal Current Gain hfe dC = 2 mA, Vce = 5 V, f = 1 KHz) BC171A/2A/4A 125 220 260 BC171B/2B/4B 240 330 500 BC172C 450 600 900 Output Admittance hoe l^mhos (IC = 2 mA, VCE = 5 V, f = 1 KHz) BC171A/2A/4A 8 25 BC171B/2B/4B 10 35 BC172C 12 50 Noise Figure NF dB dC = 0.2 mA, VCE = 5 V, Rs = 2 KOhms, BC171 2 10 f = 1 KHz, Af = 200 Hz) BC172 2 10 BC174 2 10