Low Power Bipolar Transistors

BC109 Series
Feature:

• NPN Silicon Planar Epitaxial Transistors

Specification Table
TO-18 Metal Can Package
Dimensions Minimum Maximum

A 5.24 5.84
B 4.52 4.97
C 4.31 5.33
D 0.4 0.53
E - 0.76
F - 1.27
G - 2.97
H 0.91 1.17
J 0.71 1.21
K 12.7 -
L 45°
Dimensions : Millimetres

Pin Configuration:
• Emitter
• Base
• Collector

Absolute Maximum Ratings

Description Symbol BC109 Unit

Collector - Emitter Voltage VCEO 25

Collector - Base Voltage VCBO 30 V
Emitter-Base Voltage VEBO 5
Collector Current Continuous IC 0.2 A

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 Low Power Bipolar Transistors
BC109 Series
Absolute Maximum Ratings
Description Symbol BC109 Unit
Power Dissipation at Ta = 25°C 0.6 W
PD
Derate above 25°C 2.28 mW / °C
Power Dissipation at TC = 25°C 1
Derate above 25°C 6.67
Operating and Storage Junction TJ, Tstg -65 to +200 °C
Temperature Range
Thermal Resistance
Junction to Case Rth (j-c) 175 °C / W

Electrical Characteristics (Ta = 25°C unless otherwise specified)

Description Symbol Test Condition Minimum Maximum Unit

Collector - Emitter Voltage VCEO IC = 2 mA, IB = 0 25 -

V
Emitter Base Voltage VEBO IE = 10 µA, IC = 0 5 -
VCB = 25 V, IE = 0 15 nA
ICBO Tamb = 125°C -
Collector Cut off Current
-
VCB = 25 V, IE = 0 4 µA
IC = 10 µA, VCE = 5 V -
B Group 40
C Group 100
DC Current hFE -
IC = 2 mA, VCE = 5 V 200 800
B Group 200 450
C Group 420 800

VBE 0.83
Base Emitter Saturation Voltage (Sat) IC = 10 mA, IB = 0.5 mA -
1.05
IC = 100 mA, IB = 5 mA 0.25
Collector Emitter Saturation Voltage VCE (Sat) -
0.6
IC = 2 mA, VCE = 5 V 0.55 0.7 V
Base Emitter On Voltage VBE (on)
IC = 10 mA, VCE = 5 V - 0.77
IC = 10 mA, IB = The value
Collector Knee Voltage VCE (K) for which IC = 11 mA at - 0.6
VCE = 1 V
VCE = 5 V, IC = 10 mA,
Transition Frequency ft 150 - MHz
f = 100 MHz
VCE = 5 V, IC = 0.2 mA
Rg = 2 kΩ
Noise Figure NF -
F = 30 Hz to 15 KHz 4 dB
F = 1 kHz, B = 200 Hz 4 dB
Output Capacitance Cobo VCB = 10 V, f = 1MHz - 4.5 pF
ALL f = 1 kHz
IC = 2 mA, VCE = 5V 240 900
Small Signal Current Gain hfe 240 500 -
B Group 450 900
C Group

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 Low Power Bipolar Transistors
BC109 Series
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Description Symbol Test Condition Minimum Maximum Unit

IC = 2 mA, VCE = 5V
Input Impedance hie B Group 3.2 8.5 KΩ
C Group 6 15 KΩ
IC = 2 mA, VCE = 5 V
Output Admittance hoe B Group - 60 µΩ
C Group 110

Part Number Table

Package Part Number

Transistor, NPN, TO-18 BC109

Transistor, NPN, TO-18 BC109B
Transistor, NPN, TO-18 BC109C

Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of
it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces
all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use
made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted.
Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising)
is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.

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