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 MATPR 11362 No. of Pages 6, Model 5G
9 January 2020

Materials Today: Proceedings xxx (xxxx) xxx

1

Contents lists available at ScienceDirect

Materials Today: Proceedings

journal homepage: www.elsevier.com/locate/matpr

5
6

3 Q1 Direct UV laser writing system to photolithographically fabricate

4 Q2 optimal microfluidic geometries: Experimental investigations
7 Sangam Srikanth a, Jaligam Murali Mohan a, Sohan Dudala b, Satish Kumar Dubey a, Arshad Javed a,
8 Q3 Sanket Goel b
9 Q4 a Department of Mechanical Engineering, Birla Institute of Technology and Science, Pilani, Hyderabad Campus, Hyderabad 500078, India
10 b
MEMS, Microfluidics and Nanoelectronics Lab, Department of Electrical and Electronics Engineering, Birla Institute of Technology and Science, Pilani, Hyderabad Campus,
11 500078, India
12

13
a r t i c l e i n f o a b s t r a c t
1
2 5
8
16 Article history: Ultraviolet (UV) photolithography is utilised to obtain required geometric features on a substrate coated 29
17 Received 18 September 2019 with photosensitive polymer by impinging beam of UV light. Using this fabrication technique, dimensions 30
18 Received in revised form 1 November 2019 in the order of sub-micron range can be achieved effectively. However, the conventional photolithogra- 31
19 Accepted 26 December 2019
phy is quite complex, tardy and inefficient approach, specially to achieve higher dimensions (>50 µm). In 32
20 Available online xxxx
this work, optimization for fabrication of microchannels using a custom PC based UV (405 nm) Direct 33
Laser Writing (DLW) system for photolithography has been performed. Liquid photoresist and dry film 34
21 Keywords:
photoresist of various thicknesses are used on the substrate and the patterns are fabricated using the 35
22 Photolithography
23 Microchannel
DLW system. The geometry of developed pattern is observed using profilometry and imaging techniques 36
24 Direct laser writing to understand how the width and depth of pattern is being affected by the varying parameters (laser 37
25 Photoresist intensity and stage speed), and their optimal values for desired width and depth have been identified. 38
26 Profilometry Parameters for developing (developer solution and time) are analysed for both types of photoresists 39
27 and their effect of mould dimensions have also been studied. 40
Ó 2019 Elsevier Ltd. All rights reserved. 41
Selection and peer-review under responsibility of the scientific committee of the 2nd International Con- 42
ference on Recent Advances in Materials & Manufacturing Technologies. 43
44

45
46
47 1. Introduction source, microscope, mask(s), and dedicated operator, making it a 63
highly cost and time intensive process. 64
48 Q5 MEMS and semiconductor industry extensively utilize several One way to eradicate these challenges is to use Direct UV laser 65
49 kinds of micro-patterns for various applications. Patterns are usu- writing (DLW) on to the substrate to obtain the required pattern. 66
50 ally generated using standard photolithography (UV Lithography) One of the unique features of DLW is that in place of a hard mark 67
51 techniques on a substrate coated with a photosensitive material. only software mask is required to scan the UV laser accordingly. 68
52 The photosensitive material can either be positive resist or nega- This method is termed as Maskless Photolithography (MPL). Many 69
53 tive resist, which reacts differently when exposed to UV light. With methods are available for fabricating micropatterns such as, 3D 70
54 positive photoresist, the UV is exposed on the areas need to be printing, Xurography, CO2 laser machine [3–5]. However, MPL 71
55 removed. On the contrary, when a negative photoresist is exposed offers better resolution, throughput and suitability to research as 72
56 to UV light, the chemical structure of the photoresist is hardened per the requirement of the semiconductor industry at a compara- 73
57 and the unexposed area can easily be removed [1,2]. The exposure tively lower cost. One of the major advantages of MPL is design 74
58 can be performed by placing a mask on the substrate to obtain the scalability that can be done prior to direct writing on the substrate 75
59 required pattern. Exposure can also be done in steps, using a step- [6–8]. There are multiple parameters in MPL process, which deci- 76
60 per, wherein the UV light is exposed as a projection through the des the accuracy and desired geometry of the micro pattern such 77
61 mask. Overall, this conventional photolithography process needs as, intensity of the laser, speed and motion accuracy of the fixture 78
62 several exclusive and dedicated items such as mask-aligner, UV table, and the substrate thickness. 79
Several research attempts are made to study these parameters 80

E-mail address: satishdubey@hyderabad.bits-pilani.ac.in (S.K. Dubey) over the generated geometry of the microchannel. Experimental 81

https://doi.org/10.1016/j.matpr.2019.12.301
2214-7853/Ó 2019 Elsevier Ltd. All rights reserved.
Selection and peer-review under responsibility of the scientific committee of the 2nd International Conference on Recent Advances in Materials & Manufacturing
Technologies.

Please cite this article as: S. Srikanth, J. M. Mohan, S. Dudala et al., Direct UV laser writing system to photolithographically fabricate optimal microfluidic
geometries: Experimental investigations, Materials Today: Proceedings, https://doi.org/10.1016/j.matpr.2019.12.301
 MATPR 11362 No. of Pages 6, Model 5G
9 January 2020

2 S. Srikanth et al. / Materials Today: Proceedings xxx (xxxx) xxx

82 studies have been performed to vary the width by only adjusting Table 1
83 the exposure of laser (intensity) to obtain a relatively stable line- Specifications of Direct UV Laser Writing (DLW).

84 width of a microchannel [9]. Usually, with increasing exposure # Part Specification

85 time, the width of the pattern also increases; hence there is a need 1 Laser head GaN diode,
86 to optimize the laser intensity to obtain lines of required width. 405 nm wavelength
87 Investigations have been done to study the effect of laser intensity 65,000 W/m2 Intensity
88 and speed with which the laser passes on the substrate coated with 2 XY-scanning stage travel 100 mm range,
1 lm resolution
89 liquid photoresist [10]. Consequences of exposure efficiency and 3 Z-axis focus travel 20 mm,
90 line width were analyzed using a digital micro-mirror devices to 1 lm resolution
91 develop a relationship between exposure efficiency, exposure 4 Dimensions of substrate 100 mm  100 mm
92 intensity and line width of pattern [11]. In addition, line or space 5 Control software Lazy cam,
Laser writing System, Mach3 loader.
93 patterns were analyzed for different exposure doses and pattern
94 profiles were also studied based on intensity distribution [12].
95 Experiments were performed on dry film photoresist to produce
96 microfluidic devices using relatively low cost lithography method 3. Experimental procedure 125
97 that eliminated cleanroom requirements [13].
98 In the present work, an experimental study is performed to ana- Extensive experimentations have been performed to obtain the 126
99 lyze the variations of line width corresponding to the change in results for the variations of selected parameters. First, the sub- 127
100 laser intensity and stage speed (fixture table) of a specifically cus- strates were prepared with dry and wet photoresists, which are 128
101 tomized maskless DLW system for photolithography, custom man- described in detailed here. Negative dry film photoresist (DFR) 129
102 ufactured by Holmarc Opto Mechatronics Pvt Ltd. The variation of (negative) is placed a on glass substrate and passed through a lam- 130
103 photoresist thickness is also considered and its effect on the micro inator (115 °C) to adhere it to glass substrate to prevent any 131
104 pattern line width is discussed. In this study, liquid photoresist and entrapped air. Subsequently, the substrate was cooled down natu- 132
105 dry film photoresist are chosen to fabricate the micropatterns. rally to the room temperature. 133
Liquid photoresist had a good adhesive property with glass and 134
copper surfaces. The thick liquid photoresist is diluted using Propy- 135
106 2. Materials and equipment lene glycol methyl ether (Sigma Aldrich), which is a slow evaporat- 136
ing solvent that acts as a thinner to reduce the viscosity of 137
107 A custom designed maskless Direct UV laser writing (DLW) sys- photoresist. The prepared photoresist is coated on glass substrates 138
108 tem is used in this work, which directly plots the micropattern using a spin coater (Spin NXG-P1AC, APEX Instruments India) at 139
109 designs through a static laser head on a motion controlled XY stage spin speeds varying from 250 rpm to 2500 rpm. The spin coated 140
110 carrying the substrate coated with photo sensitive layer. The laser substrates are then baked in an air oven (CINTEX Industrial Corpo- 141
111 uses a GaN laser diode with a wavelength of 405 nm. The system ration) for 1 h at 90 °C followed by natural cooling up to room tem- 142
112 comprises of XY scanning stage travel range of 100 mm in both perature. The thickness of coated photoresist material is measured 143
113 the directions. The Z axis travel limit is up to 20 mm to provide bet- using contact profilometer (Surtronic 25-Taylor-Hobson). By this 144
114 ter focus on the substrate. The focus can be manually adjusted with process, uniform and thin film of liquid photo resist is deposited 145
115 the help of a focusing system controlled through a UV Laser Writ- on the glass substrate. The thickness of the layer value is depen- 146
116 ing software, as shown in Fig. 1. In this work, both dry film pho- dent on the rotational speed, which is experimentally observed 147
117 toresist and liquid photoresist have been used on glass as shown in Fig. 2. As evident in Fig. 2, the thickness of photoresist 148
118 substrates. The specifications of DLW system are listed in Table 1. layer decreases with increase in the rotational speed. 149
119 Dry film photoresist of 38 µm (1.5 mil) thickness is procured To analyze the performance of the system, a straight line of 150
120 from Segolike, India and liquid photoresist (Photrak ETAP 240) 2 cm length and 100 µm width is drawn using CorelDraw X7 in 151
121 was obtained from A-GAS Electronic materials. Both the photore- ‘‘.dxf” format. LazyCam software is used to extract G-codes for 152
122 sists used are negative photosensitive materials having excellent the designs. The G-codes are altered as required and Mach3 loader 153
123 adhesion and are suitable for use with alkali and acid etchants or software acts as the interface for computer and the laser writing 154
124 developers. system. Intensity is varied using the laser writing software and 155
speed (i.e., the speed at which XY stage moves) is varied through 156
changing values in G-code. Fifteen minutes after the exposure, 157
the protective layer on the DFR is removed and developed using 158

Fig. 1. Parts of the UV-Laser Writing system. Fig. 2. Thickness variation of the layer with rotation speed.

Please cite this article as: S. Srikanth, J. M. Mohan, S. Dudala et al., Direct UV laser writing system to photolithographically fabricate optimal microfluidic
geometries: Experimental investigations, Materials Today: Proceedings, https://doi.org/10.1016/j.matpr.2019.12.301
 MATPR 11362 No. of Pages 6, Model 5G
9 January 2020

S. Srikanth et al. / Materials Today: Proceedings xxx (xxxx) xxx 3

159 the suitable developer solution. The optimized developer for the
160 DFR is 0.8% Sodium carbonate (Sigma Aldrich). Here the developing
161 time was selected as 2 min at 24 °C. The obtained pattern is then
162 rinsed with DI water and the washed substrate with desired pat-
163 tern is dried with nitrogen gas. In case of substrates coated with
164 liquid photoresist, post exposure the substrates are developed with
165 1% Sodium carbonate solution. The pattern developing time is var-
166 ied corresponding to the thickness of the photoresist. For higher
167 thickness of the photoresist longer development time is required.
168 In both the cases, developer solution is sprayed on to the sub-
169 strates. Once the patterns are generated, the remaining photoresist
170 material is cleaned by spraying DI water on the substrates.

171 4. Results and discussions

172 4.1. Dry film photo resist Fig. 4a. Width vs. Thickness-50 steps per minute.

173 Experiments are conducted to establish the effect of the laser

174 intensity and stage speed on the generated width of the patterns.
175 As depicted in Fig. 3(a), stage speed is increased from 50 steps
176 per minute to 100 steps per minute (500 µm/sec to 900 µm/sec)
177 while keeping the intensity constant. Successively, the intensity
178 is varied from 25,000 W/m2 to 65,000 W/m2. In another set of
179 experiments, as shown in Fig. 3(b), intensity is increased from
180 25,000 W/m2 to 65,000 W/m2 with constant speed. This is repeated
181 for different speeds ranging from 50 to 100 steps per minute (500–
182 900 µm/sec). The thickness of pattern-line is measured using the

Fig. 4b. Width vs. Thickness-75 steps per minute.

Fig. 3a. Variation of width with speed.

Fig. 4c. Width vs. Thickness-100 steps per minute.

surface profiler and found to be 35 µm. The width is measured 183

using an optical microscope (Leica DM2000). 184
As seen in Fig. 3(a), at a speed of 50 steps per minute and inten- 185
sity of 65,000 W/m2, 26% increase in width is observed as com- 186
pared to the design dimension (100 µm). At speed of 100 steps 187
Fig. 3b. Variation of width with Intensity. per minute with 25,000 W/m2, there is a 17% decrease in the width. 188

Please cite this article as: S. Srikanth, J. M. Mohan, S. Dudala et al., Direct UV laser writing system to photolithographically fabricate optimal microfluidic
geometries: Experimental investigations, Materials Today: Proceedings, https://doi.org/10.1016/j.matpr.2019.12.301
 MATPR 11362 No. of Pages 6, Model 5G
9 January 2020

4 S. Srikanth et al. / Materials Today: Proceedings xxx (xxxx) xxx

Fig. 5. Straight Channels fabricated using Laser Writing System on (a) Dry and (b) Liquid Photoresist.

decreases, the line width decreased as well. For 75 steps per min- 222

Table 2 ute speed, minimum width of 137.3 µm is obtained at intensity of 223

Optimum limiting conditions identified from experimentation (spm: steps per 25,000 W/m2. At speed of 100 steps per min, a minimum line width 224
minute). of 118.59 µm is noted at an intensity of 25,000 W/m2 as shown in 225

Attributes Finding Fig. 4(c). To obtain patterns with lesser width on substrates coated 226
with liquid photoresist, higher speed and lower intensity values 227
Thickness Liquid Photoresist: 4.02 µm
Dry Film Photoresist: 35 µm are desired. 228
Width Liquid Photoresist: 118.59 µm The obtained results show that the variation in width for sub- 229
Dry Film Photoresist: 82.89 µm strates coated with liquid photo resist is higher than that of the 230
Minimum distance between 2 38.025 µm substrates with dry film photoresist. One of the reasons for this 231
micropattern
variation could be varying liquid photoresist thickness on sub- 232
Optimal Combination of Intensity Liquid Photoresist: 25,000 W/m2 &
and speed to achieve micropattern 100 spm strates. Another contributory factor can be attributed to the chem- 233
of 100 µm Dry Film Photoresist: 35,000 W/m2 & ical properties of liquid and dry film photoresist, which behave 234
60 spm & 45,000 W/m2 & 70 (or 80) differently on UV exposure. Fig. 5 shows samples of patterns fabri- 235
spm
cated by direct laser writing on dry film and liquid photoresist. It 236
can be noticed that dry film photo resist offers straighter edges 237
with better accuracy compared to liquid photoresist. 238
189 The microchannel width gradually decreases with increase in the After multiple trials for fabrication of micropatterns on sub- 239
190 speed and decrease in the intensity. Fig. 3(b) indicates that increas- strates coated with Dry film photoresist and Liquid photoresist, 240
191 ing trend in width is observed with increase in intensity. This can optimum limiting conditions were identified for required dimen- 241
192 be attributed to the increased spot size at higher intensities. From sions. The optimal values are tabulated in Table 2. 242
193 Fig. 3, it can be realized that optimal combination of speed and
194 intensity must be chosen for obtaining desired channel geometries.
5. Conclusions 243
195 It is evident that, to obtain line width of 100 µm, combination of
196 intensity 35,000 W/m2 with 60 steps per minute and 45,000 W/
In this work, optimization of Direct UV laser writing (DLW) sys- Q6 244
197 m2 with 70 (or 80) steps per minute are optimal.
tem for fabrication of microchannels was performed using both dry 245
film photoresist and liquid photoresist. Various parameters such as 246
198 4.2. Liquid photoresist intensity of laser, speed of the stage and layer thickness of photore- 247
sist material were varied to obtain optimal parameters corre- 248
199 Liquid photosensitive material is spin-coated on substrates at sponding to the pattern needs. DLW system was used for direct 249
200 different speeds to obtain different thickness. While using liquid writing of patterns on the substrates and line widths for different 250
201 photoresist, thickness of photoresist becomes an important param- intensities and speeds were obtained. In addition to these, line 251
202 eter affecting line width. The substrates are exposed to intensities width for varying thickness were also recorded and data was anal- 252
203 from 25,000 W/m2 to 65,000 W/m2 at three chosen speeds i.e. 50, ysed accordingly. It has been observed that line width increases 253
204 75 and 100 steps per minute. For each thickness, speed is kept con- with intensity at lower speeds. Whereas, at high speeds with high 254
205 stant and intensity is varied from 25,000 W/m2 to 65,000 W/m2. intensity, the line width is comparatively less. Patterns generated 255
206 Similarly, experiments are conducted for different thickness at with higher speed and lower intensity results in less line width 256
207 three speeds with varying intensities. Fig. 4 represents the varia- and better accuracy. In case of dry film photoresist, the percentage 257
208 tions in the widths of the microchannel corresponding to different change in width is less than that of liquid photoresist. Line width 258
209 values of the thickness of the liquid photoresist for three speeds increases with decrease in liquid photoresist thickness for given 259
210 and different intensity values. parameters. Thus, in addition to intensity of laser and speed of 260
211 It is evident, that there is rapid decrease in width for thickness the stage, photoresist thickness is also an important parameter 261
212 up to 10 µm followed by a gradual decrease. It can be inferred that affecting the line width. Substrates with dry film photoresist pro- 262
213 for layers with lesser thickness, the width should be higher. Pat- duced patterns with straighter edges, when compared with liquid 263
214 terns of lesser width can be obtained with thicker photoresist photoresist. Further studies, such as resolution, shape of the 264
215 layer. At speed of 50 steps per minute (Fig. 4(a)), patterns are wider microchannel and utilization of the microchannels as mold for 265
216 for higher intensities. At any intensity level, there is no significant soft-lithography, are underway to ensure the versatility of the 266
217 drop in width even up to thickness value of 40 µm. This implies DLW system. Q7 267

218 that at speed of 50 steps per minute, due to the slow stage move-
219 ment, the laser dosage increases, which leads to increase in width. Declaration of Competing Interest 268
220 At speed of 75 steps per minute (Fig. 4(b)), for intensity 65,000 W/
221 m2 there is no considerable change, however as the intensity The authors declared that there is no conflict of interest. 269

Please cite this article as: S. Srikanth, J. M. Mohan, S. Dudala et al., Direct UV laser writing system to photolithographically fabricate optimal microfluidic
geometries: Experimental investigations, Materials Today: Proceedings, https://doi.org/10.1016/j.matpr.2019.12.301
 MATPR 11362 No. of Pages 6, Model 5G
9 January 2020

S. Srikanth et al. / Materials Today: Proceedings xxx (xxxx) xxx 5

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Please cite this article as: S. Srikanth, J. M. Mohan, S. Dudala et al., Direct UV laser writing system to photolithographically fabricate optimal microfluidic
geometries: Experimental investigations, Materials Today: Proceedings, https://doi.org/10.1016/j.matpr.2019.12.301