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T ERAHERTZ W IRELESS C OMMUNICATIONS

A 16-QAM 45-Gbps 7-m Wireless Link Using InP HEMT LNA


and GaAs SBD Mixers at 220-GHz-Band

Yukun Li, Yong Zhang * , Chengkai Wu, Jianhan Cui, Huali Zhu, Bo Yan

School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
*
The corresponding author, email: yongzhang@uestc.edu.cn

Abstract: This paper presents a 220-GHz-band 7-m cant challenge to the existing wireless communication
wireless link with a 45-Gbps transmission data rate by technologies. Although the commercial 5th generation
using 16 quadrature amplitude modulation (16-QAM). mobile networks (5G) at millimeter-wave frequencies
Super-heterodyne transceiver modules are developed can support data rates of more than 10 Gbps in the
for transmission and reception of the modulated sig- future [4], most of applications beyond 10 Gbps still
nals, which consist of a Schottky barrier diodes (SBD) need to depend on optical fiber communication [5].
based sub-harmonic mixer (SHM), an InP HEMT low However, optical fiber communication technology is
noise amplifier (LNA), a waveguide band-pass filter difficult to support application in high-speed mobile
(BPF), and a 108-GHz local oscillator (LO) multiplier scenario. In this background, wireless communication
chain. The transmitter features a peak transmit power technologies using carrier frequency above 100 GHz
of 1.41 dBm, and the IF frequency varies from 5 GHz (or call it as terahertz communication) will be avail-
to 20 GHz. Besides, the receiver features a conver- able to support application with more than 100 Gbps
sion gain of 9.3 dB in average and a noise temperature and provide abundant available spectrum [6, 7]. It is
of 3052.8 K. The measured results indicate that the expected that high-speed terahertz wireless link will
transceiver modules enable data transmission of a 45- play a central role in future wireless communication
Gbps 16-QAM signal with Signal-Noise-Ratio (SNR) systems for its high capacity and security, and it will
from 11.59 dB to 15.36 dB in a 7-m line-of-sight chan- become a decisive factor in the competition of science
nel. and technology.
Keywords: wireless link; 16 quadrature amplitude
modulation (16-QAM); super-heterodyne transceiver Generally, terahertz communication is mainly ad-
modules; sub-harmonic mixer (SHM) dressed by photonics technologies [8–12] and active
electronics devices [2, 13, 14]. Photonics technolo-
I. INTRODUCTION gies have been proven a promising solution, which
features the capability of generate broadband terahertz
In recent years, wireless capacity is increasing at a signals with frequency tunability and a high transmis-
prodigious rate, the IP traffic is exploding all over the sion speed can be achieved by optical modulation. In
world in 2018 [1, 2] and there are more than 11 billion [10], this work achieved a 100-Gbps data rates by us-
mobile connected devices by the Internet of Things ing photonic sub-harmonic mixer and 16-QAM mod-
(IoT) paradigm in 2020 [3]. Obviously, the increas- ulation. Besides, in [12], this work achieved a 612.65-
ing requirement for wireless capacity brings signifi- Gbps data rates by using photonic sub-harmonic mixer
and 64-QAM OFDM modulation. However, the pho-
Received: Jan. 22, 2021 tonics devices are limited by their own low photoelec-
Revised: Mar. 20, 2021 trical conversion efficient, and cannot meet the need
Editor: Xianbin Yu
of long-distance data transmission. On the other hand,

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LO Multiplier Chain LO Multiplier Chain
18GHz 18GHz

Antenna Antenna
108GHz SHM BPF LNA LNA BPF SHM 108GHz
7m Channel
X2 X3 X3 X2
221-236 GHz

IF signal (5~20 GHz) IF signal (5~20 GHz)


45Gbps Data 16-QAM decoding and 45Gbps Data
16-QAM coding and
PC modulating demodulating PC
IFA

Figure 1. Block diagram of the 220-GHz-band wireless link.

with the rapid development of the semiconductor tech- as follows: In Section II, the architecture of wire-
nology such as InP HBT and InP HEMT [15, 16], ac- less link and the performance of each module are de-
tive solid-state electronics technologies shown great scribed, and the link budget calculation of the pro-
advantages on their high output power and high in- posed transceiver is introduced. The design process
tegration especially from 0.1 THz to 1 THz [17]. and measured results of the critical modules for the
Some representative developments are including a 25- proposed transceiver are introduced in Section III. In
Gbps wireless link operating at 220 GHz in 50-nm Section IV, wireless link experiments with 16-QAM
mHEMT MMIC technology [13], and a 120-Gbps modulation are given. Finally, conclusion is drawn in
wireless communication link working at 300GHz in Section V.
80-nm HEMT MMIC technology [2]. Besides, [14]
employed a combination of a photonic and electronic
II. OVERVIEW OF THE WIRELESS LINK
technologies, and this wireless link achieved a data
rate of 100-Gbps. Therefore, wireless communica- 2.1 Transceiver Architecture
tion system from 200 GHz to 300 GHz is available to
meet the requirement of the wireless capacity beyond The principle block diagram of wireless link is shown
10 Gbps. in Figure 1. This wireless link is composed of a
In this paper, a 45-Gbps 16-QAM wireless link transceiver and a signal processing platform, which
working at 220-GHz-band is reported. A super- enables transmission and reception of the modulated
heterodyne front-end is designed for transmission signals, the IF signal is range from 5 GHz to 20 GHz.
and reception of the modulated signals by using As shown in Figure 2, super-heterodyne frequency
component-based architecture for its great conve- mixing architecture is adopted in this transceiver, the
nience on modifying and packaging. Circuits includ- modulated IF signal is carried out up or down fre-
ing LO multiplier, SHM, BPF, and LNA are pack- quency conversion by using GaAs Schottky barrier
diodes (SBDs) based SHM, which is driven by a W-
band ×6 multiplier chain. This frequency multiplier
IF out
chain consists of a SBDs based tripler and a doubler
amplifier stage. This doubler amplifier stage has a 4.6-
Doubler
W power consumption with a 4-dBm input signal and
Tripler it provides a 21-dBm driving power after connecting
LNA Horn antenna
SHM BPF
BPF SHM
a 4-dB attenuator for the frequency tripler at 36 GHz.
Horn antenna LNA
Additionally, this tripler reaches an output power of 5
dBm at 108 GHz with a 2.5 % conversion efficiency.
Doubler
At the transmitter side, the modulated IF signal from
Tripler IF in 5 GHz to 20 GHz is up converted by using SHM, the
carrier wave range from 221 GHz to 236 GHz is fil-
Figure 2. Photograph of transmitter and receiver. tered by a rectangular waveguide BPF and then am-
plified by a LNA module. The measured maximum
aged as waveguide modules. This paper is organized output power of the transmitter is 1.41 dBm at 226

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GHz, as shown in Figure 3. For receiver, the received Table 1. The performance of the wireless link.
signal is down converted by using a same architecture
Symbol Quantity Value
before being delivered to the demodulation platform,
the carrier wave range from 221 GHz to 236 GHz is f0 Center frequency 228.5 GHz
first amplified by using a same LNA module, and then Pout Maximum output power 1.41 dBm
is down-converted through a same mixing stage. Be- TR Noise temperature of receiver 3052.8 K
sides, a same waveguide BPF is connected between BW 0 Bandwidth of transmitter 15 GHz
the SHM and LNA. Finally, the carrier wave range N Modulation index 16
from 5 GHz to 20 GHz is finally amplified to by an G Antenna gain 25 dBi
IF amplifier module. The measured conversion gain D Link distance 7m
of the receiver is 9.3 dB in average within 221 GHz Lp Path loss of LOS channel 96.5 dB
to 236 GHz, as shown in Figure 4, and the calculated R Transmission binary data rate 45 Gbps
noise figure of receiver is 10.8 dB in average within Eb /N 0 Receive signal noise rate per bit 10.1dB
221 GHz to 236 GHz. SNR Signal noise ratio 14.87 dB

"
ity code combined with OFDM system is employed.
At first, the PRBS sequence is translated as LPDC-
16-QAM symbols, which has an improved transmis-
!"#$%&'()'(*+,-.

sion efficiency and coding gain. Then, IFFT is used


! to translate the the frequency domain symbols to time
domain. Next, a normal cyclic prefix (CP) is inserted
&
to reduce the impact on the inter-symbol interference
(ISI). At the receiver side, the received signal is con-
verted as IF signal. Then, IFFT is used to realize
&" OFDM demodulation after CP is removed. Then, the
! " # $ %! % %" %# %$
!"#$"%&'()*+, user data is recoverd back by 16-QAM de-maping and
LDPC de-coding.
Figure 3. Measured output power of transmitter.

2.3 Link Budget


20
In order to build up an available short-range wireless
15
link by using the proposed tranceiver, WR-3 horn an-
tennas with a gain of 25 dBi are connected in front of
Conversion gain(dB)

10
the terahertz front-end. Then the link budget analysis
5 of the proposed front-end is characterized by Signal-
Noise-Ratio (SNR), which can be calculated by
0

S Eb Rb
-5 SN R = 10 · lg = 10 · lg · . (1)
N N0 W
-10 Where S and N represent the average power of the out-
220 222 224 226 228 230 232 234 236 238
Frequency(GHz) put signal and noise, Eb /N 0 is SNR per bit, Rb and W
are the transmitting bit rates per second and the signal
Figure 4. Measured down- conversion gain of receiver.
bandwidth, respectively. Our assumption is a 45-Gbps
16-QAM signal in 15-GHz bandwidth, and the cen-
tered frequency is 228.5 GHz. In this calculation, the
2.2 Digital Signal Processing (DSP) Routine
maximum link distance can be calculated while the re-
The digital signal processing (DSP) routine is shown quired SNR is 15 dB. First, the maximum link distance
in Figure 5. At the transmitter side, low density par- (D) can be defined by the maximum loss of the light-

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LPDC bit QAM Serial to Parallel to
PRBS IFFT Add CP D/A Transmitter
codeing interleaving mapping parallel serial

(a)
LPDC bit QAM Parallel to Serial to
PRBS FFT remove CP A/D Receiver
decodeing deinterleaving demapping Serial parallel

(b)

Figure 5. The DSP routine of (a) transmitter,(b) receiver.

of-sight (LOS) channel as follows: can support 45 Gbps signal (16QAM, 15 Gbaud) with
a maximum loss of the light-of-sight (LOS) channel of
D = 10Lp /20 · c/(4πf0 ). (2) 96.5 dB. This means that the calculated maximum link
distance of is 7 m (SNR=14.87 dB).
Where c represents the speed of the light, and the cen-
ter frequency (f 0 ) is 228.5 GHz. Then, the maximum
loss of the light-of-sight (LOS) channel is calculated
by: III. CRITICAL CIRCUITS DESIGN FOR
WIRELESS LINK
Lp = PT + GT − PR − L0 + GR − LA . (3)

Where PR and PT are the received power and the


3.1 GaAs SBD Based SHM
transmit power, GT and GR are gain of horn anten-
nas in front of the front-end, LA represents additional In this wireless link, SHM plays an important role in
loss of wireless link and antenna misalignment, which the super-heterodyne transceiver for signal generator
is about 1 dB in both the transmitter and receiver. Be- and detector. A sub-harmonic mixing structure is em-
sides, in order to accurately analysis the channel per- ployed for mixer design, which can sharply reduce the
formance range from 200 to 300 GHz, the effects of requirement of high frequency LO signal. This SHM
fog and rain attenuation should be taken into account is designed by using anti-parallel GaAs Schottky bar-
[18–21], the atmospheric attenuation (L0 ) under clean rier diodes (SBDs), and passive linear parasitic pa-
sky and heavy rain is characterized as 3dB/Km and rameters are extracted by using 3D full-wave electro-
23dB/Km [13], respectively. The received power (PR ) magnetic simulation after considering all of the layers
can be calculated through (4) and (5) as follows: and materials of the SBDs, as shown in Figure 6(a).
Combined with an intrinsic nonlinear SPICE model,
PR = Eb /N0 + (10 · lg (k · R · TR ) + 30). (4) a complete SBD model is developed [22], where the
junction capacitance ( Cj 0 ), series resistance (Rs ), re-
verse breakdown voltage (V j ) and reverse saturation
S/N = (Eb /N0 ) · (Rb /W ). (5)
current (I s ) are 1.42 fF, 12 ohms, 0.6 V and 1.75 fA,
Where k is the Boltzmann constant (1.38×1023 J/K), as shown in Figure 6(b). This sub-harmonic mixer is
and the noise temperature (T R ) of the receiver can be designed in microstrip environment on 50-um quartz
calculated by substrate, both of the LO signal and received RF signal
are coupled to the substrate by using an E-plane probe
TR = TLN A + (Tmixer − 1)/GLN A . (6) transition, as shown in Figure 7(a). Figure 7(b) shows
the measured conversion loss of the SHM. When LO
WhereT LN A and T mixer represent the noise tempera- frequency is fixed at 108 GHz with power 5 dBm,
ture of LNA and SHM. The noise temperature intro- the measured average conversion loss is 8.1 dB from
duced by LNA and SHM are 2958 K and 950 K by 198 GHz to 236 GHz. Besides, by using the Y factor
using Y-factor measured method, and the calculated method, the measured noise temperature of the SHM
T R is 3052.8 K. As shown in Table 1, this transceiver is 950 K in average from 221 GHz to 236 GHz.

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WR-4.3

RF
GaAs substrate

IF SBDs

(a)
DC-grounding

DIODE1
Model=DIODEM
2
DIODEM 1 3
Cj0=1.42 fF PORT1 4 PORT2
Rs=12 ohms
Vj=0.6 V DIODE2
Is=1.75 fA Model=DIODEM WR-8

(b)
LO
(a)
Figure 6. (a)The 3-D electromagnetic model of planar
GaAs SBD (b) The SPICE model of planar GaAs SBD.
14

12

3.2 220 GHz BPF


Conversion Loss(dB)

10

8
A 220-GHz waveguide band-pass filter is designed for 6
frequency election in transceiver. The standardized 4

waveguide WR-4 BPF is designed by using Cheby- 2

shev filter matrix synthesize technique, and the struc- 0


195 200 205 210 215 220 225 230 235 240
Frequency(GHz)
ture of nine-pole rectangular resonant cavities is em-
ployed. Besides, ultra-sophisticated machining tech- (b)
nique with 5-um precision is employed in order to re-
Figure 7. (a) The GaAs SBD SHM (b) Measured conversion
duce the fabrication tolerance. As shown in Figure 8,
loss of SHM.
the measured center frequency is 220 GHz with a 40-
GHz 3-dB bandwidth, and the minimum loss is 0.38
dB at 220 GHz. Besides, the return loss and sideband
rejection is respectively better than 20 dB and 40 dB.
0

3.3 220 GHz InP HEMT LNA


-20

A low noise amplifier in InP HEMT technology is de-


S-Parameters(dB)

signed for signal amplification in the transmitter and -40

receiver, and it adopts a four-stage common-source


configuration, as shown in Figure 9(a). The matching -60
Simulated(S21)

Simulated(S11)

network is designed for minimum noise matching and Measured(S21)

Measured(S11)

circuit stabilization in the first stage, while the next -80

three stages focus on high gain and taking into account 160 180 200 220 240 260

the noise. Finally, the LNA MMIC is packaged as a Frequency(GHz)

module, both the input and output RF signal are cou-


pled to the main substrate by using an E-plane probe, Figure 8. 220 GHz rectangular waveguide BPF and mea-
and gold wire bonding is employed to connect to LNA sured S-parameter.
MMIC. DC power supply circuit has been embedded

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in the module. The measured results show that this 23.90%, 17.06%, 26.01%, and 26.18%, respectively.
LNA MMIC get a gain of about 12.9 dB in average A 3.98 bit/s/Hz spectrum efficiency has been real-
from 221 GHz to 236 GHz, as shown in Figure 9(b). ized in our 220-GHz-band wireless link, and Table 2
Besides, the measured noise temperature by the Y fac- gives a comparison with previous published terahertz
tor method is 2958 K in average from 221 GHz to 236 wireless links at 220-GHz-band. Besides, a cascaded
GHz. MMIC power amplifier with higher output power will
Vg1 Vg2 Vg3 Vg4 help us to achieve higher SNR in the future.

RF in RF out

Vd1 Vd2 Vd3 Vd4

(a)

20 3

18

16 2
Conversion Loss(dB)

14

12 1

10

8 0

4 -1

0 -2
200 205 210 215 220 225 230 235 240
Frequency(GHz)

(b)

Figure 9. (a) The schematic of 4-stage InP HEMT LNA, (b)


Measured small-signal gain of LNA.
Figure 10. Photograph of 220-GHz wireless link.

IV. WIRELESS DATA TRANSMISSION EX- 2

1.5 SNR=11.85 dB
2

1.5
SNR=12.28 dB
2

1.5
SNR=11.59 dB
2

1.5 SNR=12.43 dB

PERIMENTS 1

0.5
1

0.5
1

0.5
1

0.5
Quadrature

Quadrature
Quadrature

Quadrature

0 0 0 0

-0.5 -0.5 -0.5 -0.5

-1 -1 -1

The transmitter and receiver modules are placed in a


-1

-1.5 -1.5 -1.5


Subband 1 Subband 2
-1.5
Subband 3 Subband 4
-2 -2 -2 -2
-2 -1 0 1 2 -2 -1 0 1 2 -2 -1 0 1 2 -2 -1 0 1 2

7-m setup for short-range wireless data transmission


In-pha se In-phase In-phase In-phase

-40
40
Power spectral density (dBm/Hz)

2 2
2

1.5 SNR=15.36 dB SNR=11.70 dB 1.5


SNR=11.64 dB -60

experiment, as shown in Figure 10. The measurement


1.5

1 1
1 -80
0.5 0.5
0.5
Quadrature

Quadrature
Quadrature

-100
is carried out in room temperature. The data trans- -0.5
0

-0.5
0

-0.5
0

-120
-1
-1 -1 -140
mission test is carried out with a 45-Gbps data rate -1.5

-2
Subband 5
-1.5

-2
Subband 6
-1.5

-2
Subband 7 -160
0 5 10 15
Frequency(GHz)
20
-2 -1 0 1 2 -2 -1 0 1 2 -2 -1 0 1 2
Rx signal spectrum (45Gbps)
and 16-QAM format. To generate a wideband 16-
In-phase In-phase In-phase

QAM IF signal, a Keysight arbitrary waveform gen- Figure 11. Measured constellation of 16-QAM 45-Gbit/s
erator (AWG) at 80 GSps is used. A Keysight digi- signal after 7-m transmission in at 220-GHz-band.
tal storage oscilloscope (DSO) is used as the receiver
of the IF signal. The measured results show that the
demodulated signals are divided as 7 sub-bands from V. CONCLUSION
3.4 GHz to 14.7 GHz, and the bandwidth of sub-
band is characterized as 1.62 GHz. The correspond- This paper reports a 220-GHz-band wireless link over
ing constellations are shown in Figure 11, and the cal- distances up to 7 m. This link is employed a super-
culated SNR values from the constellations are 11.85 heterodyne front-end and a 16 quadrature amplitude
dB, 12.28 dB, 11.59 dB, 12.43 dB, 15.36 dB, 11.70 modulation. The transceiver is consisted of SHM,
dB, and 11.64 dB, respectively. The corresponding LNA, LO multiplier chain, BPF and horn anten-
calculated EVM values are 25.55%, 24.32%, 26.33%, nas. The feasibility of 45-Gbps wireless transmis-

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Table 2. Comparison of the wireless link around 220 GHz.

Freq Data Rate Modulation BW Efficiency Pout D


Ref Technology
(GHz) (Gbps) Scheme (GHz) (Bit/s/Hz) (dBm) (m)
[2] 80-nm InP HEMT 290 120 16-QAM 30 4 6 9.8
[13] 50-nm InP mHEMT 220 25 ASK 34 0.74 0 10
[14] UTC PD+35-nm InP mHEMT 237.5 100 16-QAM 25 4 - 20
[23] 130 nm SiGe 240 25 BPSK 25 1 -3 0.11
[24] 130 nm SiGe 230 95 16-QAM 23.75 4 1.5 1
[25] 35-nm InP mHEMT 240 96 8PSK 32 3 0 40
Our
SHM+ InP HEMT 228.5 45 16-QAM 11.3 3.98 1.41 7
work

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Jianhang Cui received the B.S. de-


gree from Zhengzhou University of Aero-
Biographies nautics, Zhengzhou, China, in 2014. At
present, he is pursuing the Ph.D. de-
Yukun Li received the B.S. degree gree since September, 2016 at University
from the ChongQing University in 2015. of Electronic Science and Technology of
He is currently pursuing the Ph.D. de- China (UESTC), Chengdu, China, ma-
gree since September, 2017 at Univer- joring in Electromagnetic Field and Mi-
sity of Electronic Science and Technology crowave Technology. His current research interests include mil-
of China (UESTC), majoring in Electro- limeter wave circuit theory and technology, mm-wave and tera-
magnetic Field and Microwave Technol- hertz integrated circuits and systems.
ogy. His current research interests include
millimeter-wave and terahertz monolithic integrated circuit design
and modeling of InP heterojunction bipolar transistors. huali Zhu received the B.S. degree from
the University of Electronic Science and
Technology of China, chengdu, China,
Yong Zhang received the B.S., M.S., and in 2017. He is currently pursuing the
Ph.D. degrees from University of Elec- Ph.D. degree with the University of Elec-
tronic Science and Technology of China tronic Science and Technology of China,
(UESTC), Chengdu, China in 1999, 2001, Chengdu, China, majoring in electronic
and 2004, respectively. He was invited science and technology. His current re-
as a visiting scholar of Illinois Institute of search interests include microwave/millimeter wave circuit the-
Technology, USA, in 2009-2010. He has ory and technology, mm-wave and terahertz integrated circuits and
been working in the field of RF circuits systems.
for 18 years since he entered the University of Electronic Science
and Technology of China as a Master Student. He is now a pro-
fessor in the same university because of his outstanding research Bo Yan received the B.S. and M.S.
achievements. He has published more than 100 journal and con- degrees in electromagnetic field and mi-
ference papers. He has applied 13 patents and five of them got crowave techniques, and the Ph.D. degree
the authorization. His current research interests include the design from the University of Electronic Sci-
and application of passive and active components at RF frequen- ence and Technology of China, Chengdu,
cies, Solid state Terahertz technology, etc. China, in 1991, 1994, and 1998, respec-
tively. His current research interests in-
clude microwave and millimeter-wave hy-
brid integrated circuit and MCM technology.

262 China Communications · May 2021

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