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    Modeling and HSPICE Analysis of The CMOS Image Sensor Pixel With The Complementary Signal Path

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    陳傳中

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    J. of the Korean Sensors Society Vol. 17, No, 1 (2008) pp. 41-52 SSE USG= BAO] CMOs ODA, Bad SAS HX HSPICE SH UNS - BUS Bae LSM - Bele lial - Sees" Modeling and HSPICE analysis of the CMOS image sensor pixel with the complementary signal path Jinsu Kim, Jinwoo Jung, Myunghun Kang, Hosub Noh, Jongmin Kim*, Jaewoon Lee, and Hanjung Song’ Abstract, In this paper, a circuit analysis of the complementary CMOS active pixel and readout circuit is carried out Complementary pixel structure which is different ftom conventional 3TR APS structure is consist of photo diode, reset PMOS, several NMOSs and PMOSs sets for complementary signals. Photo diode is modelled with Medici device program. HSPICE was used to analyze the variation of the signal feature depending on light intensity using 0.5 um standard CMOS, process. Simulation results show that the output signal range is from 0.8 V to 4.5 V, This signal range increased 135 % output dynamic range compared to conventional 3TR pixel in the condition of 5 V power supply. Key Words : complementary pixel, CMOS, S&F, photo diode, PMOS reset MOS, readout circuit LMF 2:2}el| CMOS 1 AAU 7b AAS} Blo, 2b 277} WHE WS] GS Ag Aes we AH, A olmla] aA tas} AEH DSC (Digital = FA7FeH) AHA }S et 7Io] ots} Ad 2B Still Camera) S14} WHS AIHA UE BPAY +A —-& SMA. CMOS 1M] MAE SHV HS 2 10S SBS o]n] 1970 BF 744) EFSJo] Vou S Ba AE 19608 fae AMAT BAG WE HALES ARS) oma] AME, eezhe BAS om We] Ae} aa sh WRC} o] Aske AH Aeslo] SH 2] ZA ER Fo} Ach. o] AAS] Ealge ole|aje] wig Weel) 5 Eo] CMOS 282 28 oe} Geb pe o]7} Ache Bolt}. 0] wo]? olla] 447} eas} SIateh. CMOS olela) al ach, vel A1o1CMOS@: Complementary Metal Oxide Semi- she ko] conductor®) 1x2, Bal a] 2}9} BIE] CPUS ¥t tol She BA VY FR ASST, a wa a Fe ya] aA S 7S Bol ASHE WAS] Ch. CMOSE aa ay CCD 9} CMOS *9216) 52E4. CCD "YA 49] qual o}ze ata, 714, He. atacces eee ei NANG, Een. e Unies) gt8| CCD ALS COD & NEA Hshel *Comresponding sthorhjsonainjeackr ARE SLL Hh BE We, ‘Reevived November 30,207, Asseped:Janaary 17,2008) 2 Cathode Gighd Poser (in Watsfem 2) as voltage input ys Ys P= Jer6 wen? * L5te- ISA? from 2D sim Ys CHOBE ja? for Ne/p-well fen MOS CI Ineo loge asym Ve? fram no IE Yo RS “2 from von RE (pe No ite A fr BS ati is NefPwel Dige Ys ceakD : ym, subekt kepd A CP parameters pdweles is Diede made dare cakage) current, forward current, capacitance and timing rmodel Dphoto diode level 1 SePDIS 19°80 ¢)-PDCJO m= 358 S97 meL67 DPD (A.C ) Dpboto arearareaPD Js Contaied castent GED (CAD CP goad vees gr erent Sure aps inp pow mip by stvity“M fllersareePDePCon ABS Fa HAs Ae Ecoles ape] Ba pa dele wo) heals RHEE CMOS YAS Hee] oP 3, 88 744 o] Sols), SO ee Ee ASS PEE 71 GEOL, FES BAS Tae + wel Ba BPE CCD BAIA) vial AEs] Ash. Set Ccp Yall ofa} 7h] Heo] gb x lel SFO] gaa}7] Eo Phe] Exh. Aeews) ale} #2 4 CCD Y42 24a Aven}, CMOS YAS ABAR7 M AC B ETE CMOS Y4}9) WAS Pe) Eo) Sash ATA ON AS BBY BATS HS HAS AA) etch. BaloyAy 935 DAS) ASE ABA merge 8H] IE WIA SES BAL ola He SPICE B9]ARS VALS 4 SA] Pixel SUT WE AI AY HIS Fel asic. 2. See Oldlal MAi Ba owe Ay SE 14 WA) BF-Ale Vs}e Ler] OSE S42} Ble] Al7)o we} a2] SSS] ABs & AEEA, SHS) WE wopeelis SHH AxfoleH a A WSA| Ala] Bel] LETIO|OE Bolas AS a} 3/4) 4)172 ALS, 2008 57) Goue BEBE, dasoS She E EXpQES S24 S-9Z se}n]efo} B7hseH, A Ee JES Aaatel olm]4} ad aol 4B FS PEELE BIS PAIR. IS AAA} ol] EErbo|oee| Hy S32 Beat) Hate a APES AE YA AYLS Bess! 2 YAbool 2} 3 AF-S VCCS (Voltage-controlled current so- urce) 2.92) @9lch. Le Nupwell EET}. O= 2 Fo 25 BAS} FA sepwEHS 71ES) SV NMOSS} BIT 22}R4+} 218-8}. obeh S| WSS AWW 47K ZECbS|2= wel se}Eg Bosch, 1Y 12 Cadence Tools} AZZ ZErpo| LE set BTS 01 83}e] AH) alata ZErpoles Az} Eqoleh. Aaa AE SoA] Boles wel FS AYAS o]8-sfo} GASH. 1 VE 1 wWiem"el} HSSHE WL] 4417101}, 500 WV 500 wWiemeel] 8 ELE Wo} A719} SUSHCh, EA pal, pdwS Za ato} EELS $V WS 2a SF Uc. EEC} LES) Yao} Ssh oleh Fags 3S SPICE BS}ABIA| Wes}7] 8k} Ware] AV OHS Bale SYS ah A) aie] E] vile] a] (Medici) Fat] BA se] BAY sich. B APel) -42- ARY ALAS W] CMOS $12 P 4) 4 GAB HSPICE 814 = © Yolgeae ager] stead 4 te sat =~] 2} Bgole . 28 3@e S44} A eabolal Segal we] t a1 Newell 418 C9129) Ae Zo]3} ataigte] Sv U1E|AS whe] By Vas HAlsea SB 1. a4 Eero] o 54a A RC}. 2 3by=E BARTS Az) 94 + EOS 37) 2 We ASR Ue. WBS] FS ums AVPO Sy Fig, 1. Modeling of the photo de fra eeu simul PUN ah Wea ahaa tel genapee ae Son according the ht intensity. ee Balun’) BAS HEM, 2 We aby] Photadiod: 7\7* 1e-6 Wicm? U4 1.54e-15 Alums AESTSIC}. “henr 3. Qt! CMOS O|D[A| MA Bad sh} Ad 4& Chen Xwt ASL= AME ABE Bal oju|a} MAS} PSO]CH. 71S] 3TR FAA HABE Dy, Saigle] Sgt wl Aahcp, allah, Seo) 4TR ES ; Bo] SAYS doioel MANE 9188 Sito] obs, aba 22) p Fa of) ; 72 see cape ra Sea 88 Ho device modeling using Medici program, (APS eto] G2, FAVA) WAY B4AK= 5 V NMOS 2:7}9] 20A%/EM — fo] @ eal} Yo] eA a a] 4gh s+ SUSE N+Pwell Beele}, =. Qe 5 r eal Balas 2] PA} SA ESS SPICE NMOS model?! Xj @ Neub SE} HE] ZA}S} FOS Ops FSS} SAG. VY Ze wIcA]S 018-0] Aa) EE (a) photo diode structure (b) output current AB 3. PAH REL olor was) 9hyt IaoH ope we]al ws] ale Aah Fig. 3. Medici simulation results of the photo diode according to the light intensity -9- 4. Sensors Soe., Vol. 17, No. 1, 2008 “ Aas: a 4 aeaaaa| , i rl BY 4, algtshe 28 CMOS 9}P12) A} 8 3S Fig. 4. Proposed complementary CMOS image sensor pixel circuit MOS(MI.M2)= S44] 272] Ws7} AYOR SS Sal Bch. 2 & 2249] Ve} MOS(M3,M4)= 2]4 AG AB Sls) Meh. F7|2= ala ol] AV 2A) A), P48] BE Bao] Easy) |} spy 2] Rowe] Sh+2] UH E] RS F7} Spy, Heo} BABY Bape} sh}s] MHElS o}- Bap of AMEGAAG Ao]E vsel2 3 vselle] AEB wdlshe as} Age] Boyes Adal SH eh. S A714 dete] Za oltre Fs] AS ALS op 2 UE Re] het shy] WA C= Fhe) ‘UA RSS wi s7] Hal ole}. Cy) Baal & “| a3 et Photo V AGH+4-& 2212] NMOS(M2), JB 5. 24l AG et A) RErpol2= Ag Photo v) F4 HAA As AMG VAL BAY - AGU ola - SU PMOS(M1)2| Ale] Eo] el 7t|at, SFeo} WA MOS(M3.Maye AESI7) Ach. Bas] Se Ae Al@} MOS(M3.M4)¢} 7le]=o] el7}s|s AIS gt of Sai Bale) Als7} SS si) alc. Bee Bde] S342 HAS ZErfo] ees} SF BH] IS Val Yo] Ws seh. o]e4e o] FH Alf] JAS Meroe BBS ol Sele] we] gy AbSa} el4t Aghol HE Aeh Sd Fa (Photo VS AME. 2y se Aleks ZErpo]L= VVepdl= Se-6, pdw=3e-6)2l] 500 wWiem?2} 14} RE BLS el7t OAS BF ZEOILE APhoto V) 4 Yo} U. eal alg BA SAL Voltagel =0, Voliage2=5, Delay time=1 is, Rise time=Ins. Fall time=1 ns, Pulse width= 10 ms, period=10.01 ms°-S! 8 213}31¢}. Asks FES Bd olnla| AAS eal EWA) AE 7} Bas CHE PMOSS. 49S] YOU S NMOSSHE WHS eal ANS WAST, eal Age] OVA A+ «Sel VDD RES WI, 3] Fs] Belo Sel ita) Ago) ast] Alaekh, 2d 62 Bal 44g ade say 4ge wo) Alle] Sop SPICE AEe}o}4d As} Bs7o]e}. of Wz Be] Yo] SHH A set Fae] Be] a ORE ZS Mt + ach. UE Me] eles] S71) U2 = A FB BNA, 100 pV~5100 pV S22 ANUS ATE 17H] STEPS HAIL Uy. 0] MSE Bo) A717} ORE HES Ue} Zlole} BF YOM, ARE 10mselch, ©]9]2] 449) Aae) Sols Aa Rel Beals) We Ms wd. BA WAY lo] MS FE Vow, Hslala oe Fig. 5. Simulation result of the node voltage in the photo diode under low reset voltage. A312) 17a ALE, 2008 ae qv LEAR Yel] CMOS olla) ala) Bad etal SL SPICE Ht 45 a AE 6. aete Serbo] ees yl gapgol| ake Eechol ee APhoto V) ela AF Fig. 6. Simulation resutt of the node voltage in the photo diode according to the various light intensity (0000 AN/cm? Se cam con We. FAD We] Yo] M4. Wel SLs +P | eh. glo] oe 2714, We] So] ok Yo] BS a, Ta ARAM OS BE Pe] Wet eHol ae A) Sl] Sec}. Jae dal RAH te] Ye] Alle, 10~ 10000 pWiem? %0}}, SES} 4i)717F 10 «Wier? © Hh EEC} LE AE Photo V2} 7127l(delta V idelta Time "14 F274, ©] 718715 SBS + 3 = AA] Bojok Me}. ET Was Re} Ari} 10000 hWiem? 2s. oH? GRE GY ERC] SE Ag (Photo VE} 71271 wh 2), eb |z °] Agr ASA ZU ALS ASA + selof Beh. 1e 169] BH ANA OB Age Bo] ie | -45— 7. 29] Al717} 10000 hWiem? @ $2] ERC] R= Ag} (Photo V) 548 Bat 7. Node voltage of the photo diode in case of the high intensity(10000 x Wicm!) a ae FE YAN YF). 1z]BE We) Yo] oh Bo} EECS|2= AT Photo V) S440) oP WEA a Of BSE BRAVES (A LY 10 ms2l yal POR Wo] mS He Hgel4 Ses) ALS a ofa # LES Mh. URES, Re] Yo] ok a ©} REO] 2= AY Photo V) Ho] VS Se Bla BEANE YAAUE 1S A] POH Rol AS AS Wee Bes) ASS Hoye F US & BRO] Paar, ARIOS HOA Boe Yl 2} Bol Ge} BAL AY BAS] FS AS Bas’ 6] 3th. Se] a7)7} HE BF BEpo|L= Ae (Photo V) At sale] A1z2gahoH we} Bala] ol J. Sensors Soe., Vol. 17, No. 1, 2008 AH 8. Voutp % Voutn B35 Fal A}Beljol4l Az} (500 wWiem?) Fig. 8. Simulation results of the Voutp and Voutn (5000 1 Wiem?). Al7| HEY ANAS SHS) ASS Yo + al = ATE eh. Rt AW S Bale, Woy ali7|7} oF WE AF Se AER RET] L=S A (Photo V)2} AG FAlo] w=] Bola} s/n}, o] A Folks ASS Ao) + She 7} Aojayy) Ach. ake} Ye} N71 7F 10000 wWiem?eH} 442] SEE}O] 2. 3 AG Photo V9] VEE Jo} 2) | 4} gop # SLE Speco] E}ojo} Sch. 218 TAA S| Ast Be Ao =e gal ae 100 uV~S100 pV (Reset 77] :10 ms)" Mo] Z°] HBSS SVT Tel} Up. 87] eolAl yo} Ail7% 10000 uw Wiem? (10 mV 17h) & 73-201}, wo] et BA 71S I ms® 1 BPN og Ph + BAU ge Blo] He 1s ASS dy ae a wae] BES) WL Alo] oe As AS S WIA F of agaist ae. 24 selA}e] Babel] Be] el Mosel Ae] A BA(vsell, vsel2)ol] leh Weh= Yate} ss 2h aeebl Ach. 714 ch] eo] eitsperet UBL, Srl] Seo] Sis We] Yo) ws ac}st 7p AAS G, FELL= AF} (Photo V2] AY AS AF 7 Zolz|a) Ach. ola Ay, Aa a UY SAPS Soi Yo By oe AS = Ae Mos AolEo} el7tsl= Ast Beef ape} 41 2S OMA Sch, Aa SaA~cel aise a ee] BAFs 71S Al Fo}, BS A1zLS RLS ATS AW + olok Beh. |] TIA As Ea alse} we Sa} S F712] AF Mos BAS AS = aSt BF, AMS US Ho] BH} oh. S, We] Alt AE BPS BEYO]L= A (Photo ALATA) M172 ALLS, 2008 Vo] Fo] oh Ge} WoyzJEs, He a]z} etl] 4 Aa] ASS BEM Ware] Mech. azz Asa Bese wy WE 3719} 42 US ZL ese] 2D 2S 7a deh. 4. See Ba USsHssl= Mil g! Simulation HBA BZES Blo] VA Bao] Ue A WSS] SSS 18 94] ERA. Bale} Ase Source & Follower (S&F) 2)-} 2:9]3) BSS Se} THA SIC}. 2S SAPO YQ BAYS) ASE Vl AS AA 2914) IEA AAA) FSS shail eleh. ae AS AS} ANY Az 4-2 HT. 4.1. Source & Follower 812 221 2¥ 10& Source-Followers] 2.2} 5.0] Ch, = 11 Souree-Fllower=] 2.0*| MOS(M0,M4)=H]_ 2 Voutn, Voutp?| 187} 428] £85}o] 42 Se op Congr | Salas Fees SAF LL Switching age B21(veu AB 9. 489 Bae oln|a) ay ls SESE Fig. 9. Block diagram of the proposed CMOS. pixel readout circuit A 46— 49 UIE Wes] CMOS o|2|A MA Bal SID B HSPICE a} 7 AE! 10. Source - Follower $12 Fig. 10. Schematic of the source - follower. Fig, 11. Simulation results of the sw1 and sw2. Bolt}. SIA YES Se MOS(MOM4)2} vb, vb2 aell 2}2H} Voutn, Voutp 2] 215.71 24 841@ A} Bala Bol AHS B Sel spYo] Has}oy, o} ** Voutn, Voutp’] 3.7} MOS(MS.M3)21 )¢] E44) @ BUC. Ale} WS Atel] Sah VDD ze) Blo] UL = ALS7t Mos} M79} BE Ap Mos} Sli tH) 8b el aabi 28H] ZH 11) FY SS Ap. F AS SF Voutp 62! swie ¥) B73S9) UB Fo] ANY Fe sos aa 40), ChE VS, Voum2} 1S sw2e aelz)o}, -47- 294 3B otos aaa. 4.2, ula7| Se wall 19) 12 Hat] BE oC}. MIW719} FS BE. We At] S719 7A BF BLE o SS AQ} WE AS Sabi she Belch. Wa) Zo FRE AE MS Set SE} a7 athe dole. B tte] alebehe wlae7i= wh SY SES BFE B71S ASA. Base, Ue ASS SH} Voup See] Viele ets] J. Sensors Soe., Vol. 17, No. 1, 2008 48 v ae 12. ¥)27) Fig. 12. Schematic of the comparator. JE 13. sav7] USS Alea) Fig. 13. Simulation results of the Al AG. VreHis BS EAU WS Algseh Fai) ath, V2.8 Bol Qe VSI} SAH Mcp BS A) 2. ANS] Sao] So, Bagdad we Be. we. Ago] Bo} S14) eh. 28 3 BE] v9] 4 Atel] Vea Agel We} ela Sealshs A We ov = SVz Bala Ach o} Balla Boe 71 SAY US ISVS Ba FACh. ] Blw71o] ZA A HBS ue] BBS ap} +93) B= Mose) ACES w7ts\A) Sth. ALA} S}a]7) a7 ALS, 2008 AAS - BAS AYE EA ASU - ola - Sa ae aa aet a EA 2.5 Vv) ‘comparator output (Vref : 2.5 V). 43, AA8 12 SA) 2g We 2 daa Ve H94 AZ eld. aw 4a] Bes) 292 YER BAS Ao] oye} ewe ES 47 +2010), dale Fhe] Va (swl, sw2yF S49] YEA a(swi)e) *1s27191SS 7) 4 u]e 2] YE (Comparator-out}o = So}.27] eh. Se Ate] wil WHIRS B+ Vet Mose} AF do] BYP} owl Se) SISA Sri, swie] WS Ate] UMS BH Set MOSS] Ao] BIE) of sw2 ate] FA S]7) IC}. A> Source Follower?) SAS F wit Ao] WAV SAG. sw2 —48- NB LEAS YAY CMOS olaiaaly Bd VAY gD HSPICE Ha i d L B14, 2:1 294) se Fig. 14. 2:1 Switching circuit. = Vous] So}S 21E2]"], swe] VoutpolA] So} S AlBolch. wil Bs Mst7]9} MISS 74 244) 3182] Aol Aol el7 tsa) sich. 2% 1S Source Follower 4] Be} 1H7} w]e AAA GS ASTM Jall(swiel 2g) 294} Bal) AW Aso BAS HA] Telch. S, swat sw2GSS v]a27]2] V{=swl) ab 7EAMS VA Fah MAS} A914 BE Aas] SSI] Se] SA ich. DE 15. 4912] 312 YA (owl, sw) AzalolA THY 44.388 a aA UsHesie #4 Wat 2H 16} A913] U2 AS SS WPS BAAR Viswijatel Blat7] S29] 7)e2iet aac} J ES AV) SAA Hz, 0] Ae eve S2S AU eet AOS wba ch. o] BS Agr & 494 aZ2) YS Mose] AWS Yale Se}, Voutn2} 18. 3, swi2] eS Selsba ech. V-ao) 8]at7) Bo) 7eAeE} ao}: & 44, BS Age] S4H7] Ha, o] Ae yl F284 Ve Adee wba acho) BS Age. A913 3]Re] o}Re Mose} Ahde} Bsa} Al 212}, Vou?) 1%, + sw22°] AES Sesh 5) = Roleh. Val UE Ae By Wale], Bo} S2e Boo) He} Se4]BR, By well ech. AEE 2914) AY HBS at uaa) she Belch. as, 247}4] SHS] Bal PREC BIS) 08 V~4.5 VE] BUNS 7] % Aaa] A S482 "hs et Saale. DO) A7|7) BA} BF, S 10000 wWiem? Bee} Bo) HS ZAM OS} WE SS HIS Ase. We FAS | ms2s SH}, Select MOS! @h7bE= WAS] UM} 71 ZAZF 10 ps, 50 ps StMEh. BH L7ONAL SLED eRe], WAV717F 10000 wWiem™ 9] ZECH|L= A Photo V) HAE SEA A & 7S ADS RTE UE. FH 2G 17S mse] et F7)0} S 2ms Sete] Se SUS BOM, oF ey) Pole Bas] a SS SHS ASAT ME RS SF A. HR op aA v7] BEY 21 299 BSS ADV 3} H)t7] A189} whe} Aesolates Ya} Fig. 15. Simulation results of the sw) and sw2 and selected region according the comparator signal. —49- J, Sensors Soe., Vol. 17, No. 1, 2008 0 wae aa AVE Hl AB ola Sa a TH 16. swis} su29] a7 mergeSlO] We WS 7 At Hl Hah Fig. 16. Output voltage curve of the merged Voutn with Voutp. Bl 17. 812} 41717} High intensity(10000 wWien ee 21 BFA AS ABO HY Fig. 17. Output voltage curve in ease of the high intensity (10000 pWiem?) £18 Vout Youn] 41874 Ae] AAISIO} & Sake 2S 84 ole. as, Bel re FOE. 08 V~45 VO} HIB Ales AAA AY SAae ele Nat Seach SB EE A) AaisK= AL olula) AMS OE Ze Slo} a Bali S40] 7eesiche AS Mokzeeh, BEES SESS USS Sale] Bboy y Qe ABE BY Agel Jah PAM} FE Dynamic Range’ 91 7} oh) Wek, We ad olnl7] AMM US EEF} 2H Lost Zo] NMOS} PMOSE o]23}e] ZEIGE EAS at SAVES AYA, Bo) Aa} heh Dynamic Range? 7/21 4) O}9]S

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