MBT3946DW1T1

Dual General Purpose

Transistor
The MBT3946DW1T1 device is a spin−off of our popular
SOT−23/SOT−323 three−leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT−363−6
surface mount package. By putting two discrete devices in one http://onsemi.com
package, this device is ideal for low−power surface mount
applications where board space is at a premium. (3) (2) (1)

• hFE, 100−300
• Low VCE(sat), ≤ 0.4 V Q1 Q2
• Simplifies Circuit Design
• Reduces Board Space
(4) (5) (6)
• Reduces Component Count
• Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
MBT3946DW1T1*

• Device Marking: MBT3946DW1T1 = 46

*Q1 PNP
Q2 NPN
• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
6 5
4
MAXIMUM RATINGS
1
Rating Symbol Value Unit 2
3
Collector −Emitter Voltage VCEO Vdc
SOT−363−6/SC−88
(NPN) 40
CASE 419B
(PNP) −40
Style 1
Collector −Base Voltage VCBO Vdc
(NPN) 60
(PNP) −40
Emitter −Base Voltage VEBO Vdc MARKING
(NPN) 6.0 DIAGRAM
(PNP) −5.0
Collector Current − Continuous IC mAdc
(NPN) 200
46d
(PNP) −200
Electrostatic Discharge ESD HBM>16000, V
MM>2000
46 = Specific Device Code
THERMAL CHARACTERISTICS d = Date Code

Characteristic Symbol Max Unit

Total Package Dissipation (Note 1) PD 150 mW
TA = 25°C ORDERING INFORMATION
Thermal Resistance RJA 833 °C/W Device Package Shipping†
Junction−to−Ambient

Junction and Storage TJ, Tstg −55 to +150 °C MBT3946DW1T1 SOT−363 3000/Tape & Reel
Temperature Range
MBT3946DW1T1G SOT−363 3000/Tape & Reel
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint. MBT3946DW1T2 SOT−363 3000/Tape & Reel
MBT3946DW1T2G SOT−363 3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

 Semiconductor Components Industries, LLC, 2004 1 Publication Order Number:

January, 2004 − Rev. 2 MBT3946DW1T1/D
 MBT3946DW1T1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2) V(BR)CEO Vdc
(IC = 1.0 mAdc, IB = 0) (NPN) 40 −
(IC = −1.0 mAdc, IB = 0) (PNP) −40 −
Collector −Base Breakdown Voltage V(BR)CBO Vdc
(IC = 10 Adc, IE = 0) (NPN) 60 −
(IC = −10 Adc, IE = 0) (PNP) −40 −
Emitter −Base Breakdown Voltage V(BR)EBO Vdc
(IE = 10 Adc, IC = 0) (NPN) 6.0 −
(IE = −10 Adc, IC = 0) (PNP) −5.0 −
Base Cutoff Current IBL nAdc
(VCE = 30 Vdc, VEB = 3.0 Vdc) (NPN) − 50
(VCE = −30 Vdc, VEB = −3.0 Vdc) (PNP) − −50
Collector Cutoff Current ICEX nAdc
(VCE = 30 Vdc, VEB = 3.0 Vdc) (NPN) − 50
(VCE = −30 Vdc, VEB = −3.0 Vdc) (PNP) − −50

ON CHARACTERISTICS (Note 2)
DC Current Gain hFE −
(IC = 0.1 mAdc, VCE = 1.0 Vdc) (NPN) 40 −
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 70 −
(IC = 10 mAdc, VCE = 1.0 Vdc) 100 300
(IC = 50 mAdc, VCE = 1.0 Vdc) 60 −
(IC = 100 mAdc, VCE = 1.0 Vdc) 30 −

(IC = −0.1 mAdc, VCE = −1.0 Vdc) (PNP) 60 −

(IC = −1.0 mAdc, VCE = −1.0 Vdc) 80 −
(IC = −10 mAdc, VCE = −1.0 Vdc) 100 300
(IC = −50 mAdc, VCE = −1.0 Vdc) 60 −
(IC = −100 mAdc, VCE = −1.0 Vdc) 30 −
Collector −Emitter Saturation Voltage VCE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) (NPN) − 0.2
(IC = 50 mAdc, IB = 5.0 mAdc) − 0.3

(IC = −10 mAdc, IB = −1.0 mAdc) (PNP) − −0.25

(IC = −50 mAdc, IB = −5.0 mAdc) − −0.4
Base −Emitter Saturation Voltage VBE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) (NPN) 0.65 0.85
(IC = 50 mAdc, IB = 5.0 mAdc) − 0.95

(IC = −10 mAdc, IB = −1.0 mAdc) (PNP) −0.65 −0.85

(IC = −50 mAdc, IB = −5.0 mAdc) − −0.95

SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product fT MHz
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (NPN) 300 −
(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) (PNP) 250 −
Output Capacitance Cobo pF
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (NPN) − 4.0
(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) (PNP) − 4.5
Input Capacitance Cibo pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (NPN) − 8.0
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) (PNP) − 10.0
2. Pulse Test: Pulse Width ≤ 300 s; Duty Cycle ≤ 2.0%.

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 MBT3946DW1T1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Max Unit
Input Impedance hie k

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN) 1.0 10
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) (PNP) 2.0 12
Voltage Feedback Ratio hre X 10− 4
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN) 0.5 8.0
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) (PNP) 0.1 10
Small −Signal Current Gain hfe −
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN) 100 400
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) (PNP) 100 400
Output Admittance hoe mhos
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN) 1.0 40
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) (PNP) 3.0 60
Noise Figure NF dB
(VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 k
, f = 1.0 kHz) (NPN) − 5.0
(VCE = −5.0 Vdc, IC = −100 Adc, RS = 1.0 k
, f = 1.0 kHz) (PNP) − 4.0
SWITCHING CHARACTERISTICS
Delay Time (VCC = 3.0 Vdc, VBE = − 0.5 Vdc) (NPN) td − 35
(VCC = −3.0 Vdc, VBE = 0.5 Vdc) (PNP) − 35
ns
Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) (NPN) tr − 35
(IC = −10 mAdc, IB1 = −1.0 mAdc) (PNP) − 35
Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) (NPN) ts − 200
(VCC = −3.0 Vdc, IC = −10 mAdc) (PNP) − 225
ns
Fall Time (IB1 = IB2 = 1.0 mAdc) (NPN) tf − 50
(IB1 = IB2 = −1.0 mAdc) (PNP) − 75

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 MBT3946DW1T1

(NPN)

+3 V +3 V
DUTY CYCLE = 2% 10 < t1 < 500 s t1
300 ns +10.9 V
+10.9 V DUTY CYCLE = 2%
275 275

10 k 10 k
0
−
0.5 V
< 1 ns Cs < 4 pF* 1N916 Cs < 4 pF*

−
9.1 V′
< 1 ns

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time
Equivalent Test Circuit Equivalent Test Circuit

TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25°C
TJ = 125°C

10 5000
(NPN) VCC = 40 V (NPN)
3000
7.0 IC/IB = 10
2000
CAPACITANCE (pF)

5.0
Q, CHARGE (pC)

1000
700
Cibo
3.0 500

300 QT
2.0 Cobo 200
QA
100
70
1.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 3. Capacitance Figure 4. Charge Data

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 MBT3946DW1T1

(NPN)

500 500
IC/IB = 10 VCC = 40 V
300 300
IC/IB = 10
200 200

100 100

t r, RISE TIME (ns)

70 tr @ VCC = 3.0 V 70
TIME (ns)

50 50

30 30
40 V
20 20
15 V
10 10 (NPN)
(NPN)
7 td @ VOB = 0 V 2.0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Turn −On Time Figure 6. Rise Time

500 500
t′s = ts − 1/8 tf VCC = 40 V
300 IB1 = IB2 300
IC/IB = 20 IC/IB = 10 IB1 = IB2
200 200
IC/IB = 20
t s′ , STORAGE TIME (ns)

t f , FALL TIME (ns)

100 100
70 70
50 IC/IB = 20 50
IC/IB = 10 IC/IB = 10
30 30
20 20

10 (NPN) 10 (NPN)
7 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time Figure 8. Fall Time

TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)

12 14
SOURCE RESISTANCE = 200
f = 1.0 kHz IC = 1.0 mA
IC = 1.0 mA 12
10
NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

10 IC = 0.5 mA
8 SOURCE RESISTANCE = 200

IC = 0.5 mA IC = 50 A
8
6 SOURCE RESISTANCE = 1.0 k IC = 100 A
IC = 50 A 6
4
4

2 SOURCE RESISTANCE = 500
2

IC = 100 A (NPN) (NPN)
0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS)

Figure 9. Noise Figure Figure 10. Noise Figure

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 MBT3946DW1T1

(NPN)
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)

300 100

hoe, OUTPUT ADMITTANCE ( mhos)

(NPN) 50 (NPN)

200
h fe , CURRENT GAIN

20

10
100

70 5

50
2

30 1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 11. Current Gain Figure 12. Output Admittance

20 hre , VOLTAGE FEEDBACK RATIO (x 10 −4) 10

7.0
h ie , INPUT IMPEDANCE (k OHMS)

10 (NPN) (NPN)
5.0
5.0
3.0

2.0 2.0

1.0
1.0
0.5
0.7

0.2 0.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio

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 MBT3946DW1T1

(NPN)
TYPICAL STATIC CHARACTERISTICS
2.0
h FE, DC CURRENT GAIN (NORMALIZED)

TJ = +125°C (NPN) VCE = 1.0 V

1.0 +25°C

0.7
0.5 −
55 °C

0.3

0.2

0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)

Figure 15. DC Current Gain

VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)

1.0
(NPN) TJ = 25°C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA

0.6

0.4

0.2

0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)

Figure 16. Collector Saturation Region

1.2 1.0
TJ = 25°C (NPN) (NPN)
1.0 VBE(sat) @ IC/IB =10 0.5 +25°C TO +125°C
VC FOR VCE(sat)
COEFFICIENT (mV/ °C)
V, VOLTAGE (VOLTS)

0.8 0 −
55 °C TO +25°C

VBE @ VCE =1.0 V
0.6 −
0.5
−
55 °C TO +25°C
0.4 −
1.0
VCE(sat) @ IC/IB =10 +25°C TO +125°C
0.2 −
1.5 VB FOR VBE(sat)

0 −
2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 17. “ON” Voltages Figure 18. Temperature Coefficients

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 MBT3946DW1T1

(PNP)

3V 3V
+9.1 V < 1 ns

275 275
< 1 ns
+0.5 V 10 k 10 k
0
Cs < 4 pF* 1N916 Cs < 4 pF*
10.6 V
300 ns 10 < t1 < 500 s
DUTY CYCLE = 2% t1 10.9 V
DUTY CYCLE = 2%

* Total shunt capacitance of test jig and connectors

Figure 19. Delay and Rise Time Figure 20. Storage and Fall Time
Equivalent Test Circuit Equivalent Test Circuit

TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25°C
TJ = 125°C

10 5000
VCC = 40 V
(PNP) 3000 (PNP)
7.0 IC/IB = 10
2000
CAPACITANCE (pF)

5.0 Cobo
Q, CHARGE (pC)

1000
700
Cibo
3.0 500

300
2.0 200 QT
QA
100
70
1.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
REVERSE BIAS (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 21. Capacitance Figure 22. Charge Data

500 500
(PNP) IC/IB = 10 (PNP) VCC = 40 V
300 300
IB1 = IB2
200 200
IC/IB = 20
t f , FALL TIME (ns)

100 100
70 70
TIME (ns)

50 tr @ VCC = 3.0 V 50

30 15 V 30
20 20 IC/IB = 10
40 V
10 2.0 V 10
7 td @ VOB = 0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 23. Turn −On Time Figure 24. Fall Time

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 MBT3946DW1T1

(PNP)

TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS
(VCE = − 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
5.0 12
SOURCE RESISTANCE = 200
f = 1.0 kHz IC = 1.0 mA
IC = 1.0 mA
10
4.0 IC = 0.5 mA
SOURCE RESISTANCE = 200

NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

IC = 0.5 mA 8
3.0
SOURCE RESISTANCE = 2.0 k
IC = 50 A 6
2.0
4 IC = 50 A

1.0 SOURCE RESISTANCE = 2.0 k IC = 100 A

IC = 100 A 2
(PNP) (PNP)
0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) Rg, SOURCE RESISTANCE (k OHMS)

Figure 25. Figure 26.

h PARAMETERS
(VCE = − 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 100
hoe, OUTPUT ADMITTANCE ( mhos)

(PNP) 70 (PNP)

50
h fe , DC CURRENT GAIN

200

30

100 20

70
10
50
7

30 5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 27. Current Gain Figure 28. Output Admittance

hre , VOLTAGE FEEDBACK RATIO (x 10 −4)

20 10

7.0
h ie , INPUT IMPEDANCE (k OHMS)

10 (PNP) (PNP)
7.0 5.0
5.0

3.0 3.0

2.0 2.0

1.0
0.7
1.0
0.5
0.7
0.3
0.2 0.5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 29. Input Impedance Figure 30. Voltage Feedback Ratio

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 MBT3946DW1T1

(PNP)

TYPICAL STATIC CHARACTERISTICS

2.0
h FE, DC CURRENT GAIN (NORMALIZED)

TJ = +125°C VCE = 1.0 V

1.0 +25°C

0.7
−
55 °C
0.5

0.3
(PNP)
0.2

0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)

Figure 31. DC Current Gain

VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)

1.0
(PNP) TJ = 25°C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA

0.6

0.4

0.2

0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)

Figure 32. Collector Saturation Region

1.0 1.0
 V , TEMPERATURE COEFFICIENTS (mV/ °C)

TJ = 25°C VBE(sat) @ IC/IB = 10

0.5 +25°C TO +125°C
0.8 VC FOR VCE(sat)
VBE @ VCE = 1.0 V
V, VOLTAGE (VOLTS)

0
0.6 −
55 °C TO +25°C
(PNP) (PNP)
−
0.5
0.4 +25°C TO +125°C
−
1.0
VCE(sat) @ IC/IB = 10 −
55 °C TO +25°C
0.2 VB FOR VBE(sat)
−
1.5

0 −
2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 33. “ON” Voltages Figure 34. Temperature Coefficients

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 MBT3946DW1T1

PACKAGE DIMENSIONS

SOT−363−6/SC−88
CASE 419B−02
ISSUE L

NOTES:
A 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
G 2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.

INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.071 0.087 1.80 2.20
6 5 4 B 0.045 0.053 1.15 1.35
C 0.031 0.043 0.80 1.10
S −B− D 0.004 0.012 0.10 0.30
G 0.026 BSC 0.65 BSC
1 2 3 H −−− 0.004 −−− 0.10
J 0.004 0.010 0.10 0.25
K 0.004 0.012 0.10 0.30
N 0.008 REF 0.20 REF
S 0.079 0.087 2.00 2.20
D 6 PL 0.2 (0.008) M B M
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
N 3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
J 6. COLLECTOR 2

K
H

SOLDERING FOOTPRINT*

0.50
0.0197

0.65
0.025

0.65
0.025
0.40
0.0157

1.9
0.0748
SCALE 20:1
inches
mm 

Figure 35. SC−88/SC70−6

*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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 MBT3946DW1T1

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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