On behalf of the International, Scientific and Technical Committees we take great pleasure in welcoming

you to Brussels for the second edition of the International Conference Graphene.

A plenary session with internationally renowned speakers, extensive thematic workshops in parallel, one-
to-one meetings (Brokerage Event) and a significant industrial exhibition featuring current and future
Graphene developments will be highlighted at the event.

Graphene 2012 is now an established event, attracting global participants intent on sharing, exchanging
and exploring new avenues of graphene-related scientific and commercial developments.

We truly hope that Graphene 2012 serves as an international platform for communication between
science and business.

The organizers are also pleased to welcome Grafoid Inc., a Canadian graphene development and patenting
joint venture, as lead sponsor of this year’s event. They join many other remarkable institutions in
supporting the second edition of Graphene conference. Grafoid Inc. is a privately-held graphene
investment and technology company intent on establishing a mass production process for economically
scalable graphene.

We are also indebted to the following Scientific Institutions, Companies and Government Agencies for
their help and/or financial support:
Phantoms Foundation, Université Catholique de Louvain, ONERA, Centre National de la Recherche
Scientifique, CIN2 (ICN-CSIC), Grafoid Inc., Graphene Flagship Pilot Action, Consiglio Nazionale delle
Ricerche, Oxford Instruments, Aixtron, Thermo Fisher Scientific, Instituto Español de Comercio Exterior
(ICEX), Fonds de la Recherche Scientifique (FNRS), GDRI: Graphene-Nanotubes, SSCP and MULT-EU-SIM
project.

We also would like to thank all the exhibitors and participants that join us this year.

One thing we have for granted: very few industries, one way or another, will escape from the influence of
Graphene and the impact on businesses is here to stay.

Hope to see you again in the next edition of Graphene 2013 to be held during ImagineNano event
(www.imaginenano.com) in Spain.

Graphene 2012 Organising Committee

1
 Committees

Organising Committee

Jean-Christophe Charlier Université Catholique de Louvain (Belgium)

Antonio Correia Phantoms Foundation (Spain)
ONERA-CNRS and GDRI, Int. Research Group on Graphene and
Annick Loiseau
Nanotubes (France)
Stephan Roche CIN2 (ICN-CSIC) (Spain)

Local Organising Committee

Jean-Christophe Charlier Université Catholique de Louvain (Belgium)

Luc Henrard Facultés Universitaires Notre-Dame de la Paix de Namur (Belgium)

International Scientific Committee

Adrian Bachtold Catalan Institute of Nanotechnology (Spain)

Alexander Balandin University of California (USA)
Antonio Castro Neto National University of Singapore (Singapore)
Hui-Ming Cheng Institute of Metal Research (China)
Gianaurelio Cuniberti Technische Universität Dresden (Germany)
Toshiaki Enoki TITECH (Japan)
Andrea Ferrari University of Cambridge (UK)
Mar Garcia-Hernandez ICMM-CSIC (Spain)
Mark Goerbig LPS Orsay (France)
Pablo Jarillo-Herrero MIT (USA)
Jari Kinaret University of Chalmers (Sweden)
Alessandra Lanzara Lawrence Berkeley National Laboratory (USA)
Pierre Mallet Institut Néel - CNRS (France)
Charles Marcus Harvard University (USA)
Vincenzo Palermo CNR-ISOF (Italy)
COMMITTEES

François Peeters University of Antwerpen (Belgium)

Alain Pénicaud University of Bordeaux (France)
Loh Kian Ping National University of Singapore (Singapore)
Young Woo Son Korea Institute for Advanced Study (Korea)
2
Lead Sponsor

Platinum Sponsors

Gold Sponsors

Silver Sponsors SPONSORS

3
 Lead Sponsor

GRAFOID

Grafoid is a Canadian technology joint venture company. We invest

and we manage high-growth, scalable graphene investments,
patents and material applications. Our aim is to create the global
standard for an economically scalable graphene and engage in
strategic opportunities with industrial partners.
Grafoid’s pristine quality graphene comes from the world’s best graphite source, Focus Metals’ Lac Knife,
Quebec deposit. The inherent, conductive values of the graphite source remain undiminished through
Grafoid’s top-down extraction and transformation process that respects nature to the highest level.

Platinum Sponsors

OXFORD INSTRUMENTS

Oxford Instruments is a leading supplier of high technology tools and

systems for research and industry, specialising in equipment that can
fabricate, manipulate, characterise and analyse matter at the smallest
scale. We are opening up the exciting world of graphene with our
innovative toolbox of techniques and products, helping our partners to
reveal even more of the nano-world. To find out more about how a partnership with Oxford Instruments
can unlock challenging possibilities, please visit our booth or www.oxford-instruments.com

GRAPHENE FLAGSHIP

This pilot action GRAPHENE-CA paves the road to the FET Flagship
"Graphene-Driven Revolutions in ICT and Beyond" (GRAPHENE). The
GRAPHENE flagship ambition is to bring together a focused,
interdisciplinary European research community that aims at a radical
technology shift in information and communication technology that exploits the unique properties of
graphene and related two-dimensional materials. Graphene research is an example of an emerging
translational nanotechnology where discoveries in academic laboratories are rapidly transferred to
applications and commercial products.
SPONSORS
4
 NATIONAL RESEARCH COUNCIL OF ITALY (CNR)

The National Research Council (CNR) is the largest Italian

institution dedicated to scientific research; its duty is to carry
out and spread research activities in the main sectors of
knowledge, and applications of research to the economic and
social development of the country. To this end, the activities of the organization are divided into macro
areas of interdisciplinary research: biotechnology, medicine, materials, environment and land, information
and communications, advanced systems of production, judicial and socio-economic sciences, classical
studies and arts. CNR is distributed all over Italy through a network of institutes aiming at promoting a
wide diffusion of its competences throughout the national territory, and has a long-lasting experience in
both supervising large research projects at national level as well as participating to larger european
network of joint research within the past and presents EU framework programs.

Gold Sponsors

AIXTRON

AIXTRON has enabled researchers all over the world to grow high quality
graphene using our equipment, from small chips to 4-inch or 6-inch
diameter substrates, and even on industrial 12-inch wafer-scale. We are a
leading provider of state of the art equipment to the semiconductor industry with over 28 years of
experience in producing research and production equipment. Our technologies cover the deposition of
carbon, silicon, III-V and II-VI materials for electronics, display, storage, lighting and energy applications
using technologies such as CVD, PECVD, MOCVD and ALD.

THERMO FISHER SCIENTIFIC

Thermo Fisher Scientific, the world leader in serving science enables its
customers to make the world healthier, cleaner and safer by providing
analytical instruments, equipment, reagents and consumables, software
and services for research, analysis, discovery and diagnostics. The company delivers a broad selection of
analytical instruments, equipment, consumables and laboratory supplies. Its products includes innovative
technologies for mass spectrometry, elemental analysis, molecular spectroscopy, sample preparation,
informatics, fine and high-purity chemistry production, cell culture, RNA interference analysis and
immunodiagnostic testing, as well as air and water quality monitoring and process control.

UNIVERSITE CATHOLIQUE DE LOUVAIN

Founded in 1425, one of Europe’s oldest universities, UCL has over 27,000
students on five sites (Louvain-la-Neuve, Bruxelles, Mons, Tournai). UCL educates
almost one in every two French-speaking Belgians, and attracts every year 4,000
SPONSORS

international students from around the globe (a number of programmes are given
in English). UCL trains students in all disciplines, from beginner’s level through
doctorate level and on to adult continuing education. Teaching is based on solid
research and innovation. UCL is also one of the 22 European Universities to have received the ECTS label, a
UE recognition of the quality of its management of international exchanges.
5
 ICEX

The Spanish Institute for Foreign Trade (ICEX, “Institutito Español de

Comercio Exterior”) is the Spanish Government Agency serving
Spanish companies to promote their exports and facilitate their
international expansion, assisted by the network of Spanish Embassy’s Economic and Commercial Offices
and, within Spain, by the regional and Territorial Offices.
It is part of the Spanish Ministry of Economy and Competitiveness (“Ministerio de Economía y
Competitividad”)

ESPAÑA TECHNOLOGY FOR LIFE

This program, carried out by ICEX, focuses in the promotion in foreign markets of
Spain’s more innovative and leading industrial technologies and products.

Silver Sponsors

FNRS

Fund for Scientific Research-FNRS is a key player in fundamental research in the

French Community of Belgium. F.R.S.-FNRS has supported and championed free
scientific research in all scientific fields for over 80 years. Building on expertise
and partnerships, the F.R.S.-FNRS fosters innovation and knowledge
development by selecting, supporting and evaluating researchers and research
projects within university laboratories. A respected institution within Belgium, the F.R.S.- FNRS is a driving
force behind the competitiveness of Belgian research in Europe and worldwide. The mission of F.R.S.-
FNRS is to contribute to the development of a competitive knowledge society by supporting researchers
and their initiatives and disseminating scientific research.

GRAPHENE AND NANOTUBES – GDRI

The "Graphene and Nanotubes: science and applications" ("GNT")

group is a national research group (GDR 3217) and an international
coordination network (GDRI) cross-linking research on nanotubes and
graphene. Its scientific activity is based on three vital and emerging
research themes, which develop knowledge of basic properties of individual nano-objects as well as their
manipulation for developing devices linked to the industrial and socio-economical world. The group
gathers French, European and Canadian partners who have played a major role in the activities of the
previous GDR, and to which are added scientists of international reputation working on graphene.
SPONSORS
6
 SSCP

SSCP was established in 1973 and grew up as a specialty coating

company. In 1997, SSCP stepped into electronic material &
component industry and made a distinguished performance in
Optical Fiber, Printed Electronics, and EMI Filters.
With its accumulated technologies and facilities, SSCP recently succeeded to commercialize Graphene, the
material with astonishing thermal and electronic properties.
SSCP is now fully geared to mass product Graphene powders, pastes, inks and films, which will be applied
to LED TV, Mobile Devices, OLED, Secondary Batteries and Transparent Electrodes. Industry struggled with
thermal problems will welcome those products.

MULT.EU.SIM

MULT.EU.SIM aims to gather the simulation research community in Europe to

establish a joint vision of multiscale modelling and simulation. This will enable
to prepare Europe to play a leading role in the opening era of computational
sciences where multiscale simulation will profoundly change the scientific and
technological practices. This European vision will serve as the foundation for a
joint effort with emphasis toward multiscale unified codes and standardized
interfaces & workflows in a field that is currently very fragmented. Ultimately,
the availability of such a multiscale code toolbox will put Europe’s industry in
a strong IPR position.

NANO
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7
 Exhibitors

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EXHIBITORS
9
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Aachen (Germany) · Cambridge (UK) · Sunnyvale (USA) · Lund (Sweden) · Seoul (Korea)
Tokyo (Japan) · Shanghai (China) - Hsinchu (Taiwan)
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Russia Pavilion

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EXHIBITORS
11
ABSTRACTS
Abstracts - Index

Plenary Speakers

PAGE
Albert Fert (Université Paris Sud & CNRS/Thales, France)
"Graphene and Spintronics"
76

Keynote Speakers

Eva Y. Andrei (Rutgers University, USA) –

Mildred S. Dresselhaus (MIT, USA) –
Klaus Mullen (MPI for Polymer Research, Germany)
"Is the Future Black? – The Chemist’s Search for Graphene and Carbon Materials" 138

Invited Speakers

Li Baowen (National University of Singapore, Singapore)

"Anomalous thermal transport in low dimensional nanostructures" 33
Johann Coraux (Institut Néel – CNRS, France)
"Epitaxial graphene/metal hybrids" 64
Toshiaki Enoki (Tokyo Institute of Technology, Japan)
"Magnetic and electronic structures of nanographene and fluorinated nanographene with an 72
interplay of edge-state spins and dangling bond spins"
Jean-Noël Fuchs (Université Paris Sud, France)
"Bloch-Zener oscillations as a probe of Dirac points merging in artificial graphene" 81
Michael S. Fuhrer (University of Maryland, USA)
"Broadband Photodetection with Graphene Devices" 82
ABSTRACTS - INDEX

Francisco Guinea (ICMM-CSIC, Spain)

"Interaction effects in graphene heterostructures" 92
Masataka Hasegawa (AIST, Japan) –
Byung Hee Hong (Seoul National University, Korea)
"Production and Applications of Graphene for Large-Area Electronics" 95
Frank Koppens (ICFO, Spain)
"Graphene: a novel platform for capturing and manipulating light at the nanoscale" 109
15
 Nicola Marzari (EPFL, Switzerland)
"Phonon lifetimes, thermal transport, and mobility in graphene from density-functional –
perturbation theory"
Bae Ho Park (Konkuk University, Korea)
"Characterization and manipulation of graphene using AFM" 146
Maurizio Prato (University of Trieste, Italy)
"Reactivity of Graphene Sheets: Cycloadditions and Rolling up to form Nanotubes" 150
Christian Schönenberger (Basel University / SNI, Switzerland)
"Gapped ground state in suspended bilayer graphene" 164
Jurgen Smet (Max Planck Institute for Solid State Research, Germany) –
Kazu Suenaga (AIST, Japan)
"Atomic Imaging and Spectroscopy of Single Layered Materials with Interrupted 175
Periodicities"
Mauricio Terrones (The Pennsylvania State University, USA) –

Graphene Flagship session

Invited Speakers

Vladimir Falko (Lancaster University, United Kingdom)

"The Graphene Science and Technology Roadmap" 74
Andrea Ferrari (University of Cambridge, United Kingdom)
"The Graphene Science and Technology Roadmap" 74
Masataka Hasegawa (AIST, Japan)
–
"Japanese Graphene Research Activities and Roadmap"
Byung Hee Hong (Seoul National Univ., Korea)
"Korean Graphene Research Activities and Roadmap" 96
Jari Kinaret (Chalmers University of Technology, Sweden)
“Graphene Flagship: working together to combine scientific excellence and technological –
impacts”

Orals Plenary
ABSTRACTS - INDEX

Adrien Allain (CNRS, France)

"Tunable superconductivity in graphene based hybrid devices" 32
Christian Benz (Karlsruhe Inst. of Technology (KIT), Inst. of Nanotechnology (INT), Germany)
"Graphene Field-Effect Transistors on Hexagonal Boron Nitride Operating at Microwave 35
Frequencies"
16
Andreas Betz (Ecole Normale Supérieure, France)
"Electronic Cooling by 2D Acoustic Phonons in Graphene" 38
Alexey Bezryadin (University of Illinois, United States)
"Standard deviation of the switching supercurrent in graphene proximity junctions" 39
Liam Britnell (University of Manchester, United Kingdom)
"Field-effect tunneling transistor based on vertical graphene heterostructures" 50
Alessandro Cresti (IMEP-LAHC (UMR 5130), France)
"Quenching of the quantum Hall effect in graphene with scrolled edges" 65
Tim Echtermeyer (University of Cambridge, United Kingdom)
"Photo-thermo- vs. photo-electric effects in metal-graphene-metal photodetectors" 70
Luis Foa Torres (FaMAF, Universidad Nacional de Córdoba, Argentina)
"Tuning the transport properties of graphene through AC fields" 79
David Horsell (University of Exeter, United Kingdom)
"Scattering mechanisms that cause 1/f noise in graphene" 100
Allen Hsu (MIT, United States)
"Impact of Short Range Scattering in Graphene Electronics" 101
Antti-Pekka Jauho (Technical University of Denmark, Denmark)
"Transport phenomena in nanostructured graphene" 105
Samuel Lara-Avila (Chalmers University of Technology, Sweden)
"Disordered Fermi Liquid in Epitaxial Graphene from Quantum Transport Measurements" 115
Emiliano Pallecchi (Laboratoire de Photonique et Nanoastuctures, France)
"Quantum Hall measurements on epitaxial graphene with oxygen adsorption" 145
Antoine Reserbat-Plantey (Institut Néel- CNRS, France)
"A local optical probe for measuring motion and stress in a nanoelectromechanical system" 155
Biplab Sanyal (Uppsala University, Sweden)
"Spin manipulation of organometallics by strain engineering of defected graphene" 157
Timo Schumann (Paul-Drude-Institut für Festkörperelektronik, Germany)
"Anisotropic quantum Hall effect in graphene on stepped SiC surfaces" 165
Jean-Yves Veuillen (Institut Néel, CNRS-UJF, France)
"Reconstruction Dependent Interaction at the Graphene/ 6H-SiC(000-1) Interface probed by 186
STM and ab-initio calculations."
Heiko B. Weber (University of Erlangen, Germany)
"Manifestation of electron-electron interaction in the magnetoresistance of graphene" 192
ABSTRACTS - INDEX
17
 Parallel Workshop 1: Graphene Chemistry & Materials

Invited Speakers

Manish Chhowalla (Rutgers, USA)

"Solution Processable Graphene and Other Two Dimensional Materials for Energy 56
Applications"
Mark C. Hersam (Northwestern University, USA)
"Preparation and Application of Chemically Functionalized Graphene" 97
Renato Liardo (Volvo Corporate Materials Technology)
"Cheap competitors of graphene -the actual use of carbon black and carbon fibres in the 121
automotive and consumer industry"
Alain Pénicaud (University of Bordeaux, France)
"Chemical Solutions to Exfoliate Graphite" 149
Paolo Samorì (ISIS - Universitè de Strasbourg & CNRS, France)
"Supramolecular chemistry and (nano)graphenes: a honeymoon?" 156

Orals

Alexander Obraztsov (MV Lomonosov Moscow State University, Russia)

"Graphene-based nanomaterials for field emission applications" 141
Vincenzo Palermo (CNR Bologna, Italy)
"Introduction" 144
Vittorio Pellegrini (NEST, Italy)
"Reversible Hydrogen Storage by Controlled Buckling of Graphene Layers" 148
Guido Saracco (Polytecnic of Turin, FIAT, IIT, Italy)
"Potential of thermally conductive polymers based on carbon allotropes in the development 159
of new heat management components on board a car"

Matthias Schwab (BASF SE, Germany)

"Graphene Technology Platform at BASF" 167
ABSTRACTS - INDEX

Ester Vazquez (University of Castilla La Mancha, Spain)

"Few-layer graphenes from ball-milling of graphite with triazine derivatives" 184
18
Parallel Workshop 2: Modelling and Simulation of Graphene-based
Materials and Devices

Tutorial

Vladimir Falko (Lancaster University, United Kingdom) –

Invited Speakers

Gianluca Fiori (University of Pisa, Italy)

"Performance assessment of graphene-based devices through a multi-scale approach" 77
Arkady Krasheninikov (University of Helsinki and Aalto University, Finland)
"Tailoring the properties of graphene, dichalcogenides and other 2D materials through 112
electron irradiation: insight from DFT simulations and TEM experiments"
Aurélien Lherbier (Université Catholique de Louvain, Belgium)
"Simulation of electronic transport in defective graphene. From point defects to amorphous 119
structures"
Young-Woo Son (KIAS, Korea) –

Orals

Inanc Adagideli (Sabanci University, Turkey)

"Edge effects in graphene nanostructures: spectral density and quantum transport" 31
Dario Bercioux (Freiburg Institute for Advanced Studies, Germany)
"Spin-Resolved Transport Properties of Inhomogeneous Graphene Nanostructures" 37
Anders Blom (QuantumWise A/S, Denmark)
"Atomic-scale model for the contact resistance of the nickel-graphene interface" 41
Andres Rafael Botello Méndez (Université catholique de Louvain, Belgium)
"Boron and nitrogen doping of graphene from first principles" 48
ABSTRACTS - INDEX

Johan Carlsson (Accelrys Ltd, United Kingdom)

"Theory and hierarchical modeling of defective graphene, the effects of grain boundaries and 54
oxidation"
Mairbek Chshiev (Spintec, CEA/CNRS/UJF-Grenoble, INAC, France)
"Inducing magnetism in graphene in a view of spintronics" 58
Mauro Ferreira (Trinity College Dublin, Ireland)
"Dynamic RKKY interaction in graphene" 75
19
 Avik Ghosh (University of Virginia, United States)
"Graphene based electronics and electron ‘optics’: quantum transport and device 87
opportunities"
Pekka Koskinen (University of Jyväskylä, Finland)
"Twisting Graphene Nanoribbons into Carbon Nanotubes" 111
Yury Lozovik (Institute of Spectroscopy, Russia)
"Collective properties of Dirac electrons in graphene" 124
Elisa Molinari (University of Modena e Reggio Emilia, Italy)
"Optical Excitations and Nanoplasmonics in Graphene Flakes and Ribbons" 134
Vittorio Morandi (CNR-IMM Bologna, Italy)
"Folds and buckles at the nanoscale: experimental and theoretical investigation of the 135
bending properties of graphene membranes"
Elena Sheka (Peoples Friendship University of Russia, Russia)
"Correlation of odd electrons in graphene: Effect on chemistry, magnetism, and mechanics” 170
Maxim Trushin (University of Regensburg, Germany)
"Photocurrent in graphene n-n' junctions" 182
Shengjun Yuan (Radboud University of Nijmegen, Netherlands)
"Modeling Electronic Properties of Single-layer and Multilayer Graphene" 193
Xi Zhang (Nanyang Technological University, Singapore)
"Selective generation of Dirac-Fermi polarons at graphene edges and atomic vacancies" 197

Parallel Workshop 3: Synthesis and Characterization of Graphene

Tutorial

Ute Kaiser (Ulm University, Germany) –

Invited Speakers

Jérome Lagoute (Univ. Paris 7, France)

114
ABSTRACTS - INDEX

"Electronic properties of nitrogen doped graphene measured at the atomic scale"

Wencai Ren (Institute of Metal Research, Chinese Academy of Sciences, China)
"CVD Growth and Applications of Graphene with Millimetre-Size Single-Crystal Grains and 153
Three-Dimensional Interconnected Graphene Networks"
Amina Taleb (Synchroton Soleil, France)
"Linear band dispersion in multilayer epitaxial graphene grown on the SiC(000-1) C face" 179
Jamie Warner (University of Oxford, United Kingdom)
"Defects, Dislocations and Disorder in Graphene at the Atomic Level" 190
20
Orals

Mark Boneschanscher (Utrecht University, Debye Institute for Nanomaterials Science, CMI,
Netherlands)
"The atomic and electronic structure of well-defined graphene nanoribbons by scanning 44
probe microscopy"
Timothy Booth (DTU Nanotech, Denmark)
"Channeling of graphene in environmental TEM: towards zero-disorder nanolithography" 45
Jessica Campos-Delgado (Université catholique de Louvain, Belgium)
"Graphene synthesis using alcohol precursors" 52
Jean-François Colomer (University of Namur (FUNDP), Belgium)
"Graphene synthesized by Atmospheric Pressure Chemical Vapour Deposition" 60
Malcolm Connolly (National Physical Laboratory, United Kingdom)
"Charge writing on graphene devices using low temperature scanning probe microscopy" 62
Zheng Han (NEEL Institute, CNRS, France)
"Mechanism of Growth of Graphene Grains on Copper during Low Pressure Chemical Vapor 93
Deposition"
Robert Hurt (Brown University, United States)
"Self-Assembled Graphene Nanosacks" 103
Martin Kalbac (UFCH JH, Czech Republic)
"Raman spectroscopy of electrochemically doped 1-LG and 2-LG" 106
Philipp Leicht (University of Konstanz, Germany)
"Tailoring the atomic structure and electronic properties of graphene/metal interfaces by 117
intercalation"
Maria Losurdo (Italian National Council of Research-CNR, Italy)
"Interfacial Chemical-Electrical-Optical Phenomena in CVD-Graphene/Metal Hybrids" 122
Thomas Michely (II. Physikalisches Insitut, Germany)
"Europium on graphene: phase coexistence of clusters and islands" 131
Markus Morgenstern (RWTH Aachen, Germany)
"Scanning Probe Microscopy on Graphene Quantum Dots" 137
Louis Nilsson (University of Aarhus, Denmark)
"Graphene on the reconstructed Pt(100) surface and its interaction with atomic hydrogen" 139
Renald Schaub (University of St Andrews, United Kingdom)
"Size-Selective Carbon Nanoclusters as Precursors to the Growth of Epitaxial Graphene" 161
Alexander Soldatov (Lulea University of Technology, Sweden)
172
ABSTRACTS - INDEX

"Free standing graphene monolayer at high hydrostatic pressure"

Aldo Zarbin (Federal University of Parana, Brazil)
"Tri-layer enriched graphene sample by mechanochemical exfoliation of graphite: A one-step 195
route for the production, processing and deposition as transparent films"
Amaia Zurutuza (Graphenea, Spain)
"Graphene films synthesized via CVD" 199
21
 Parallel Workshop 4: Applications of Graphene-based Materials

Invited Speakers

Tamara Blanco-Varela (AIRBUS, Spain) –

Stefano Borini (Nokia Research Center, United Kingdom)
"Graphene technology for future mobile devices" 47
Luigi Colombo (Texas Instruments, United States) –
Chun-Yung Sung (IBM, United States)
"Near 400 GHz World Fastest Graphene RF Transistor For High Frequency Nanoelectronics 177
and Circuits CMOS Platform Integration"

Orals

Francesco Bonaccorso (Cambridge University, United Kingdom)

"Exfoliation and Sorting of Graphite flakes and inorganic two-dimensional materials" 43
Gordon Chiu (Grafoid Inc., Canada)
"Applications of Graphene-based Materials" 57
Jesus de la Fuente (GRAPHENEA S.A, Spain)
"Applications for Graphene films: market trends" 67
Vincent Derycke (CEA, France)
"Flexible GHz Transistors Derived from Solution-Based Single-Layer Graphene" 68
Jose A. Garrido (Technische Universität München, Germany)
"Graphene field effect transistors for bioelectronic applications" 83
Marcos Ghislandi (Eindhoven University of Technology, Netherlands)
"Preparation routes to aqueous graphene dispersions and their influence on electrical 85
conductivity of polymer composites"
Filippo Giubileo (CNR-SPIN, Italy)
"Study of double dip in the transfer characteristics of graphene based field-effect transistors" 89
Neil Graddage (Swansea University, United Kingdom)
"Roll to Roll Printing of Aqueous Pristine Graphene Dispersions" 90
ABSTRACTS - INDEX

Stefan Hertel (University of Erlangen, Germany)

"Tayloring the graphene/silicon carbide interface: a material system for monolithic wafer- 98
scale electronics"
Alexander Klekachev (IMEC, Belgium)
"Graphene – CdSe/ZnS quantum dots conjugated systems: charge transfer phenomena and 107
their applications"
Christy Martin (Vorbeck Materials Corp, United States)
"Near term commercial opportunities and applications of graphene" 126
22
Javier Martinez (ISOM Instituto de Sistemas Optoelectronicos y Microtecnologia, Spain)
"Graphene Electrodes For Nano-LEDs" 127
César Merino (GRAnPH Nanotech/Grupo Antolin-Ingenieria, Spain)
"Large crystalline graphene oxide sheets from helical ribbon carbon nanofibres" 129
Sergey Mikhailov (University of Augsburg, Germany)
"Graphene Based Terahertz Emitter" 133
Elena Obraztsova (Prokhorov General Physics Institute, RAS, Russia)
"Graphene for laser applications" 141
Antonio Radoi (IMT-Bucharest, Romania)
"MSM photodetector based on gold decorated graphene ink" 151
Marek Schmidt (University of Southampton, United Kingdom)
"Large Area Plasma-Enhanced Chemical Vapor Deposition of Nanocrystalline Graphite on 162
Insulator for Electronic Device Application"
Udo Schwalke (Institute for Semiconductor Technology and Nanoelectronics (ISTN),
Technische Universität Darmstadt, Germany) 168
"Transfer-Free Grown Bilayer Graphene Transistors with Ultra-High On/Off-Current Ratio"
Roman Sordan (Politecnico di Milano, Italy)
"Graphene audio voltage amplifier" 173
Ken Teo (AIXTRON Ltd., United Kingdom)
"Observing early stages of growth and scaling graphene over 300mm wafers" 180
Mercedes Vila (Universidad Complutense de Madrid, Spain)
"Cell uptake survey of functionalized Graphene for Near-Infrared Mediated tumor 188
Hyperthermia"

ABSTRACTS - INDEX
23
 Abstracts – Index Alphabetical Order

Workshop 1: Graphene Chemistry & Materials

Workshop 2: Modelling and Simulation of Graphene-based Materials and Devices
Workshop 3: Synthesis and Characterization of Graphene
Workshop 4: Applications of Graphene-based Materials
GFS: Graphene Flagship session

PAGE
Inanc Adagideli (Sabanci University, Turkey) ORAL
"Edge effects in graphene nanostructures: spectral density and quantum transport" Workshop 2 31
Adrien Allain (CNRS, France) ORAL
"Tunable superconductivity in graphene based hybrid devices" Plenary Session 32
KEYNOTE
Eva Y. Andrei (Rutgers University, USA) Plenary Session –
Li Baowen (National University of Singapore, Singapore) INVITED
"Anomalous thermal transport in low dimensional nanostructures" Plenary Session 33
Christian Benz (Karlsruhe Inst. of Technology (KIT), Inst. of Nanotechnology (INT), Germany)
ORAL
"Graphene Field-Effect Transistors on Hexagonal Boron Nitride Operating at Microwave Plenary Session 35
Frequencies"

Dario Bercioux (Freiburg Institute for Advanced Studies, Germany) ORAL

"Spin-Resolved Transport Properties of Inhomogeneous Graphene Nanostructures" Workshop 2 37
Andreas Betz (Ecole Normale Supérieure, France) ORAL
"Electronic Cooling by 2D Acoustic Phonons in Graphene" Plenary Session 38
Alexey Bezryadin (University of Illinois, United States) ORAL
"Standard deviation of the switching supercurrent in graphene proximity junctions" Plenary Session 39
INVITED
Tamara Blanco-Varela (AIRBUS, Spain) Workshop 4 –
Anders Blom (QuantumWise A/S, Denmark) ORAL
"Atomic-scale model for the contact resistance of the nickel-graphene interface" Workshop 2 41
Francesco Bonaccorso (Cambridge University, United Kingdom) ORAL
"Exfoliation and Sorting of Graphite flakes and inorganic two-dimensional materials" Workshop 4 43
Mark Boneschanscher (Utrecht Univ., Debye Inst. for Nanomaterials Science, CMI, Netherlands)
ORAL
"The atomic and electronic structure of well-defined graphene nanoribbons by scanning probe Workshop 3 44
microscopy”

Timothy Booth (DTU Nanotech, Denmark) ORAL

"Channeling of graphene in environmental TEM: towards zero-disorder nanolithography" Workshop 3 45
Stefano Borini (Nokia Research Center, United Kingdom)
ABSTRACTS - INDEX

INVITED
"Graphene technology for future mobile devices" Workshop 4 47
Andres Rafael Botello Méndez (Université catholique de Louvain, Belgium) ORAL
"Boron and nitrogen doping of graphene from first principles" Workshop 2 48
Liam Britnell (University of Manchester, United Kingdom) ORAL
"Field-effect tunneling transistor based on vertical graphene heterostructures" Plenary Session 50
Jessica Campos-Delgado (Université Catholique de Louvain, Belgium) ORAL
"Graphene synthesis using alcohol precursors" Workshop 3 52
24
Johan Carlsson (Accelrys Ltd, United Kingdom)
ORAL
"Theory and hierarchical modeling of defective graphene, the effects of grain boundaries and Workshop 2 54
oxidation"

Manish Chhowalla (Rutgers, USA) INVITED

"Solution Processable Graphene and Other Two Dimensional Materials for Energy Applications" Workshop 1 56
Gordon Chiu (Grafoid Inc., Canada) ORAL
"Applications of Graphene-based Materials" Workshop 4 57
Mairbek Chshiev (Spintec, CEA/CNRS/UJF-Grenoble, INAC, France) ORAL
"Inducing magnetism in graphene in a view of spintronics" Workshop 2 58
INVITED
Luigi Colombo (Texas Instruments, United States) Workshop 4 –
Jean-François Colomer (University of Namur (FUNDP), Belgium) ORAL
"Graphene synthesized by Atmospheric Pressure Chemical Vapour Deposition" Workshop 3 60
Malcolm Connolly (National Physical Laboratory, United Kingdom) ORAL
"Charge writing on graphene devices using low temperature scanning probe microscopy" Workshop 3 62
Johann Coraux (Institut Néel – CNRS, France) INVITED
"Epitaxial graphene/metal hybrids" Plenary Session 64
Alessandro Cresti (IMEP-LAHC (UMR 5130), France) ORAL
"Quenching of the quantum Hall effect in graphene with scrolled edges" Plenary Session 65
Jesus de la Fuente (Graphenea, Spain) ORAL
"Applications for Graphene films: market trends" Workshop 4 67
Vincent Derycke (CEA, France) ORAL
"Flexible GHz Transistors Derived from Solution-Based Single-Layer Graphene" Workshop 4 68
KEYNOTE
Mildred S. Dresselhaus (MIT, USA) Plenary Session –
Tim Echtermeyer (University of Cambridge, United Kingdom) ORAL
"Photo-thermo- vs. photo-electric effects in metal-graphene-metal photodetectors" Plenary Session 70
Toshiaki Enoki (Tokyo Institute of Technology, Japan)
INVITED
"Magnetic and electronic structures of nanographene and fluorinated nanographene with an Plenary Session 72
interplay of edge-state spins and dangling bond spins"
INVITED
Vladimir Falko (Lancaster University, United Kingdom)
"The Graphene Science and Technology Roadmap"
GFS 74
Andrea Ferrari (University of Cambridge, United Kingdom) INVITED
"The Graphene Science and Technology Roadmap" GFS 74
Mauro Ferreira (Trinity College Dublin, Ireland) ORAL
"Dynamic RKKY interaction in graphene" Workshop 2 75
Albert Fert (Université Paris Sud & CNRS/Thales, France) Plenary Speaker
"Graphene and Spintronics" 76
ABSTRACTS - INDEX

Gianluca Fiori (University of Pisa, Italy) INVITED

"Performance assessment of graphene-based devices through a multi-scale approach" Workshop 2 77
Luis Foa Torres (FaMAF, Universidad Nacional de Córdoba, Argentina) ORAL
"Tuning the transport properties of graphene through AC fields" Plenary Session 79
Jean-Noël Fuchs (Université Paris Sud, France) INVITED
"Bloch-Zener oscillations as a probe of Dirac points merging in artificial graphene" Plenary Session 81
Michael S. Fuhrer (University of Maryland, USA) INVITED
"Broadband Photodetection with Graphene Devices" Plenary Session 82
25
 Jose A. Garrido (Technische Universität München, Germany) ORAL
"Graphene field effect transistors for bioelectronic applications" Workshop 4 83
Marcos Ghislandi (Eindhoven University of Technology, Netherlands)
ORAL
"Preparation routes to aqueous graphene dispersions and their influence on electrical conductivity Workshop 4 85
of polymer composites"
Avik Ghosh (University of Virginia, United States) ORAL
"Graphene based electronics and electron ‘optics’: quantum transport and device opportunities" Workshop 2 87
Filippo Giubileo (CNR-SPIN, Italy) ORAL
"Study of double dip in the transfer characteristics of graphene based field-effect transistors" Workshop 4 89
Neil Graddage (Swansea University, United Kingdom) ORAL
"Roll to Roll Printing of Aqueous Pristine Graphene Dispersions" Workshop 4 90
Francisco Guinea (ICMM-CSIC, Spain) INVITED
"Interaction effects in graphene heterostructures" Plenary Session 92
Zheng Han (NEEL Institute, CNRS, France)
ORAL
"Mechanism of Growth of Graphene Grains on Copper during Low Pressure Chemical Vapor Workshop 3 93
Deposition"
Masataka Hasegawa (AIST, Japan) INVITED
"Japanese Graphene Research Activities and Roadmap" GFS –
Byung Hee Hong (Seoul National Univ., Korea) INVITED
"Korean Graphene Research Activities and Roadmap" GFS 96
Byung Hee Hong (Seoul National University, Korea) INVITED
"Production and Applications of Graphene for Large-Area Electronics" Plenary Session 95
Mark C. Hersam (Northwestern University, USA) INVITED
"Preparation and Application of Chemically Functionalized Graphene" Workshop 1 97
Stefan Hertel (University of Erlangen, Germany)
ORAL
"Tayloring the graphene/silicon carbide interface: a material system for monolithic wafer-scale Workshop 4 98
electronics"

David Horsell (University of Exeter, United Kingdom) ORAL

"Scattering mechanisms that cause 1/f noise in graphene" Plenary Session 100
Allen Hsu (MIT, United States) ORAL
"Impact of Short Range Scattering in Graphene Electronics" Plenary Session 101
Robert Hurt (Brown University, United States) ORAL
"Self-Assembled Graphene Nanosacks" Workshop 3 103
Antti-Pekka Jauho (Technical University of Denmark, Denmark) ORAL
"Transport phenomena in nanostructured graphene" Plenary Session 105
INVITED
Ute Kaiser (Ulm University, Germany) Workshop 3 –
Martin Kalbac (UFCH JH, Czech Republic) ORAL
106
ABSTRACTS - INDEX

"Raman spectroscopy of electrochemically doped 1-LG and 2-LG" Workshop 3

Jari Kinaret (Chalmers University of Technology, Sweden) INVITED

“Graphene Flagship: working together to combine scientific excellence and technological impacts” GFS –
Alexander Klekachev (IMEC, Belgium)
ORAL
"Graphene – CdSe/ZnS quantum dots conjugated systems: charge transfer phenomena and their Workshop 4 107
applications"

Frank Koppens (ICFO, Spain) INVITED

"Graphene: a novel platform for capturing and manipulating light at the nanoscale" Plenary Session 109
Pekka Koskinen (University of Jyväskylä, Finland) ORAL
"Twisting Graphene Nanoribbons into Carbon Nanotubes" Workshop 2 111
26
Arkady Krasheninikov (University of Helsinki and Aalto University, Finland)
INVITED
"Tailoring the properties of graphene, dichalcogenides and other 2D materials through electron Workshop 2 112
irradiation: insight from DFT simulations and TEM experiments"

Jérome Lagoute (Univ. Paris 7, France) INVITED

"Electronic properties of nitrogen doped graphene measured at the atomic scale" Workshop 3 114
Samuel Lara-Avila (Chalmers University of Technology, Sweden) ORAL
"Disordered Fermi Liquid in Epitaxial Graphene from Quantum Transport Measurements" Plenary Session 115
Philipp Leicht (University of Konstanz, Germany)
ORAL
"Tailoring the atomic structure and electronic properties of graphene/metal interfaces by Workshop 3 117
intercalation"

Aurélien Lherbier (Université Catholique de Louvain, Belgium)

INVITED
"Simulation of electronic transport in defective graphene. From point defects to amorphous Workshop 2 119
structures"
Renato Liardo (Volvo Corporate Materials Technology)
INVITED
"Cheap competitors of graphene -the actual use of carbon black and carbon fibres in the Workshop 1 121
automotive and consumer industry"
Maria Losurdo (Italian National Council of Research-CNR, Italy) ORAL
"Interfacial Chemical-Electrical-Optical Phenomena in CVD-Graphene/Metal Hybrids" Workshop 3 122
Yury Lozovik (Institute of Spectroscopy, Russia) ORAL
"Collective properties of Dirac electrons in graphene" Workshop 2 124
Christy Martín (Vorbeck Materials Corp, United States) ORAL
"Near term commercial opportunities and applications of graphene" Workshop 4 126
Javier Martínez (ISOM Instituto de Sistemas Optoelectronicos y Microtecnologia, Spain) ORAL
"Graphene Electrodes For Nano-LEDs" Workshop 4 127
Nicola Marzari (EPFL, Switzerland)
INVITED
"Phonon lifetimes, thermal transport, and mobility in graphene from density-functional Plenary Session –
perturbation theory"

Cesar Merino (GRAnPH Nanotech/Grupo Antolin-Ingenieria, Spain) ORAL

"Large crystalline graphene oxide sheets from helical ribbon carbon nanofibres" Workshop 4 129
Thomas Michely (II. Physikalisches Insitut, Germany) ORAL
"Europium on graphene: phase coexistence of clusters and islands" Workshop 3 131
Sergey Mikhailov (University of Augsburg, Germany) ORAL
"Graphene Based Terahertz Emitter" Workshop 4 133
Elisa Molinari (University of Modena e Reggio Emilia, Italy) ORAL
"Optical Excitations and Nanoplasmonics in Graphene Flakes and Ribbons" Workshop 2 134
Vittorio Morandi (CNR-IMM Bologna, Italy)
ORAL
"Folds and buckles at the nanoscale: experimental and theoretical investigation of the bending Workshop 2 135
properties of graphene membranes"
ABSTRACTS - INDEX

Markus Morgenstern (RWTH Aachen, Germany) ORAL

"Scanning Probe Microscopy on Graphene Quantum Dots" Workshop 3 137
Klaus Mullen (MPI for Polymer Research, Germany) KEYNOTE
"Is the Future Black? – The Chemist’s Search for Graphene and Carbon Materials" Plenary Session 138
Louis Nilsson (University of Aarhus, Denmark) ORAL
"Graphene on the reconstructed Pt(100) surface and its interaction with atomic hydrogen" Workshop 3 139
Alexander Obraztsov (MV Lomonosov Moscow State University, Russia) ORAL
"Graphene-based nanomaterials for field emission applications" Workshop 1 141
27
 Elena Obraztsova (Prokhorov General Physics Institute, RAS, Russia) ORAL
"Graphene for laser applications" Workshop 4 143
Vincenzo Palermo (CNR Bologna, Italy) ORAL
"Introduction" Workshop 1 144
Emiliano Pallecchi (Laboratoire de Photonique et Nanoastuctures, France) ORAL
"Quantum Hall measurements on epitaxial graphene with oxygen adsorption" Plenary Session 145
Bae Ho Park (Konkuk University, Korea) INVITED
"Characterization and manipulation of graphene using AFM" Plenary Session 146
Vittorio Pellegrini (NEST, Italy) ORAL
“Reversible Hydrogen Storage by Controlled Buckling of Graphene Layers" Workshop 1 148
Alain Pénicaud (University of Bordeaux, France) INVITED
"Chemical Solutions to Exfoliate Graphite" Workshop 1 149
Maurizio Prato (University of Trieste, Italy) INVITED
"Reactivity of Graphene Sheets: Cycloadditions and Rolling up to form Nanotubes" Plenary Session 150
Antonio Radoi (IMT-Bucharest, Romania) ORAL
"MSM photodetector based on gold decorated graphene ink" Workshop 4 151
Wencai Ren (Institute of Metal Research, Chinese Academy of Sciences, China)
INVITED
"CVD Growth and Applications of Graphene with Millimetre-Size Single-Crystal Grains and Three- Workshop 3 153
Dimensional Interconnected Graphene Networks"

Antoine Reserbat-Plantey (Institut Néel- CNRS, France) ORAL

"A local optical probe for measuring motion and stress in a nanoelectromechanical system" Plenary Session 155
Paolo Samorì (ISIS - Universitè de Strasbourg & CNRS, France) INVITED
"Supramolecular chemistry and (nano)graphenes: a honeymoon?" Workshop 1 156
Biplab Sanyal (Uppsala University, Sweden) ORAL
"Spin manipulation of organometallics by strain engineering of defected graphene" Plenary Session 157
Guido Saracco (Polytecnic of Turin, FIAT, IIT, Italy)
ORAL
"Potential of thermally conductive polymers based on carbon allotropes in the development of new Workshop 1 159
heat management components on board a car"

Renald Schaub (University of St Andrews, United Kingdom) ORAL

"Size-Selective Carbon Nanoclusters as Precursors to the Growth of Epitaxial Graphene" Workshop 3 161
Marek Schmidt (University of Southampton, United Kingdom)
ORAL
"Large Area Plasma-Enhanced Chemical Vapor Deposition of Nanocrystalline Graphite on Insulator Workshop 4 162
for Electronic Device Application"

Christian Schönenberger (Basel University / SNI, Switzerland) INVITED

"Gapped ground state in suspended bilayer graphene" Plenary Session 164
Timo Schumann (Paul-Drude-Institut für Festkörperelektronik, Germany) ORAL
"Anisotropic quantum Hall effect in graphene on stepped SiC surfaces" Plenary Session 165
ABSTRACTS - INDEX

Matthias Schwab (BASF SE, Germany) ORAL

"Graphene Technology Platform at BASF" Workshop 1 167
Udo Schwalke (Institute for Semiconductor Technology and Nanoelectronics (ISTN), Technische
ORAL
Universität Darmstadt, Germany) Workshop 4 168
"Transfer-Free Grown Bilayer Graphene Transistors with Ultra-High On/Off-Current Ratio"

Elena Sheka (Peoples Friendship University of Russia, Russia) ORAL

"Correlation of odd electrons in graphene: Effect on chemistry, magnetism, and mechanics" Workshop 2 170
INVITED
Jurgen Smet (Max Planck Institute for Solid State Research, Germany) Plenary Session –
28
Alexander Soldatov (Lulea University of Technology, Sweden) ORAL
"Free standing graphene monolayer at high hydrostatic pressure" Workshop 3 172
INVITED
Young-Woo Son (KIAS, Korea) Workshop 2 –
Roman Sordan (Politecnico di Milano, Italy) ORAL
"Graphene audio voltage amplifier" Workshop 4 173
Kazu Suenaga (AIST, Japan) ORAL
"Atomic Imaging and Spectroscopy of Single Layered Materials with Interrupted Periodicities" Plenary Session 175
Chun-Yung Sung (IBM, United States)
INVITED
"Near 400 GHz World Fastest Graphene RF Transistor For High Frequency Nanoelectronics and Workshop 4 177
Circuits CMOS Platform Integration"

Amina Taleb (Synchroton Soleil, France) INVITED

"Linear band dispersion in multilayer epitaxial graphene grown on the SiC(000-1) C face" Workshop 3 179
Ken Teo (AIXTRON Ltd., United Kingdom) ORAL
"Observing early stages of growth and scaling graphene over 300mm wafers" Workshop 4 180
INVITED
Mauricio Terrones (The Pennsylvania State University, USA) Plenary Session –
ORAL
Alessandro Tredicucci (NEST CNR-Nano and Scuola Normale Superiore Pisa, Italy) Workshop 4 –
Maxim Trushin (University of Regensburg, Germany) ORAL
"Photocurrent in graphene n-n' junctions" Workshop 2 182
Ester Vazquez (University of Castilla La Mancha, Spain) ORAL
"Few-layer graphenes from ball-milling of graphite with triazine derivatives" Workshop 1 184
Jean-Yves Veuillen (Institut Néel, CNRS-UJF, France)
ORAL
"Reconstruction Dependent Interaction at the Graphene/ 6H-SiC(000-1) Interface probed by STM Plenary Session 186
and ab-initio calculations"

Mercedes Vila (Universidad Complutense de Madrid, Spain)

ORAL
"Cell uptake survey of functionalized Graphene for Near-Infrared Mediated tumor Workshop 4 188
Hyperthermia"

Jamie Warner (University of Oxford, United Kingdom) INVITED

"Defects, Dislocations and Disorder in Graphene at the Atomic Level" Workshop 3 190
Heiko B. Weber (University of Erlangen, Germany) ORAL
"Manifestation of electron-electron interaction in the magnetoresistance of graphene" Plenary Session 192
Shengjun Yuan (Radboud University of Nijmegen, Netherlands) ORAL
"Modeling Electronic Properties of Single-layer and Multilayer Graphene" Workshop 2 193
Aldo Zarbin (Federal University of Parana, Brazil)
ORAL
"Tri-layer enriched graphene sample by mechanochemical exfoliation of graphite: A one-step route Workshop 3 195
for the production, processing and deposition as transparent films"

Xi Zhang (Nanyang Technological University, Singapore) ORAL

197
ABSTRACTS - INDEX

"Selective generation of Dirac-Fermi polarons at graphene edges and atomic vacancies" Workshop 2

Amaia Zurutuza (Graphenea, Spain) ORAL

"Graphene films synthesized via CVD" Workshop 3 199
29
Edge effects in graphene nanostructures:
spectral density and quantum transport

Inanc Adagideli, Juergen Wurm, Klaus Richter

Sabanci University, Orhanli-Tuzla, Istanbul, Turkey

adagideli@sabanciuniv.edu

We investigate the effect of different edge types on the statistical properties of both the energy spectrum
of closed graphene billiards [1] and the conductance of open graphene cavities [2] in the semiclassical
limit. To this end, we develop an exact expansion for the single particle Green's function of ballistic
graphene structures in terms of multiple reflections from the system boundary, that allows for a natural
treatment of edge effects. We first apply this formalism to calculate the average density of states of
graphene billiards. While the leading term in the corresponding Weyl expansion is proportional to the
billiard area, we find that the contribution that usually scales with the total length of the system boundary
differs significantly from what one finds in semiconductor-based, Schr\"odinger type billiards: The latter
term vanishes for armchair and infinite mass edges and is proportional to the zigzag edge length,
highlighting the prominent role of zigzag edges in graphene. We then compute analytical expressions for
the density of states oscillations and energy levels within a trajectory based semiclassical approach. We
derive a Dirac version of Gutzwiller's trace formula for classically chaotic graphene billiards and further
obtain semiclassical trace formulae for the density of states oscillations in regular graphene cavities. Next
we study the spectral two point correlation function, or more precisely its Fourier transform the spectral
form factor. We calculate the two leading order contributions to the spectral form factor, paying particular
attention to the influence of the edge characteristics of the system. Then we consider transport properties
of open graphene cavities. We derive generic analytical expressions for the classical conductance, the
weak localization correction, the size of the universal conductance fluctuations and the shot noise power
of a ballistic graphene cavity. Again we focus on the effects of the edge structure. For both, the
conductance and the spectral prperties, we find that edge induced pseudospin interference affects the
results significantly. In particular intervalley coupling mediated through scattering from armchair edges is
the key mechanism that governs the coherent quantum interference effects in ballistic graphene
cavities.an event.

References

[1] Jürgen Wurm, Klaus Richter, and İnanç Adagideli Phys. Rev. B 84, (2011) 075468
[2] Jürgen Wurm, Klaus Richter, and İnanç Adagideli; Phys. Rev. B 84, (2011) 205421
ABSTRACTS
31
 Tunable superconductivity in graphene
based hybrid devices

1 1 2 2 2 1
A. Allain , Z. Han , B. Kessler , C. Girit , A. Zettl , V. Bouchiat
1
Neel Institute, CNRS-Grenoble, France
2
Physics Dept, University of California, Berkeley, CA, USA
adrien.allain@grenoble.cnrs.fr

The easily accessible 2D electron gas in graphene provides an ideal platform on which to tune, via
application of an electrostatic gate, the coupling between electronically ordered dopants deposited on its
surface. I will present recent experimental studies on electrostatically tuned superconducting transition in
graphene sheets decorated with tin nanoparticles. The transition towards superconducting state is due to
percolation of superconductivity induced by proximity effect within the nanoparticules random array.
Depending of the disorder within the graphene layer, superconductivity show different characteristics and
significant variations. In case of low disorder exfoliated graphene, the superconducting state results from a
Berezinski-Kosterlitz-Thouless transition which leads to an homogeneous 2D superconducting state [1]. In
case of disordered Graphene (CVD-grown),we show that upon changes in carrier density (+/-7.1012 cm-2,
applying a gate voltage), a transition from a superconducting to a truly insulating state can be induced. [2].
An intermediate metallic regime is also present at the transition showing sheet resistivity of the order of
the resistance quantum h/4e^2. We interpret this transition within the framework of granular
superconductivity found in Josephson junction arrays. The intense positive magnetoresistance observed
for fields below the critical field of tin nanoparticles is a signature of the localization of Cooper pairs.
This hybrid system appears to be an original platform to investigate the current understanding of the
physics of the superconductor-insulator quantum phase transition and offer a original starting material for
the realization of superconducting weak links.

References

[1] B. M. Kessler et al., Phys. Rev. Lett. 104,047001 (2010).

[2] A. Allain et al., http://arxiv.org/abs/1109.6910.

Figures
ABSTRACTS

Figure 1: Superconducting Metal-insulating transition induced in Tin doped Graphene: Left, micrograph of a typical
sample, showing the macroscopic CVD-grown Graphene Sheet, Center :resistance-temperature curves at different gate
voltages (gate step 5V) Right : Field effect at different temperature,showing the universal resistance at the transition.
32
Anomalous Thermal Transport
in Low Dimensional Nanostructures

Li Baowen
Department of Physics and Centre for Computational Science and Engineering,
National University of Singapore, Singapore 117542, Singapore
Center for Phononics and Thermal Energy Science, Department of Physics,
Tongji University, Shanghai 200092, People’s Republic of China
phylibw@nus.edu.sg
phononics@tongji.edu.cn

The study of thermal transport in low dimensional nano scale structures is important for both fundamental
research and industrial applications. On the one hand, the low dimensional nanostructures such as
graphene, nanowires, and nanotubes provide a test bed for the conjectures and hypothesis proposed in
the last two decades for heat transport in two dimensional (2D) and one dimensional (1D) systems [1]. On
the other hand, low dimensional nano structured materials have been found to be an ideal candidates to
realize phononic functions such as thermal rectifier [2].
In bulk material, heat conduction is governed by Fourier’s law as: J=-κ∇T (1)
where J is the local heat flux and ∇T the temperature gradient, κ is the thermal conductivity which is size
independent. This is based on the assumption that phonons transport diffusively. However, for the low
dimensional systems, in particular 1D systems, except for a simple harmonic oscillator chains, we don’t
have any rigorous mathematical proof if the normal diffusion process can happen. Therefore it is still an
open question whether the Fourier law is valid in 1D and 2D systems. Especially the sufficient and
necessary condition for Fourier’s law is not clear yet [1].
In this talk, I will demonstrate that heat transfers in 1D and 2D systems are significantly from bulk material.
(1) Both numerically and experimentally show that thermal conductivity in 1D and/or quasi 1D system
such as nanowire and nanotube is not a constant. It depends on the system length as [3-4] (Fig 1 for silicon
nanowire and Fig 2 for nanotube): κ∼Lβ, with 0< β <1.
(2) Thermal conductivity in single layer suspended graphene depends on the length logarithmically when
the width is fixed [5].
In the last part, I will present our recent mathematical theory which bridges the anomalous thermal
conductivity to anomalous energy diffusion [9,10].

References

[1] A Dhar, Adv. Phys. 57, 457 (2008).

[2] N.-B Li, J. Ren, L Wang, G Zhang, P Hanggi, and B Li, Rev. Mod. Phys, in press (2012)
[3] N. Yang, G. Zhang, and B. Li, Nano Today 5, 85 (2010).
[4] C W Chang, D Okawa, H Garcia, A Majumdar, and A Zettl, Phys. Rev. Lett. 101, 075903 (2008).
ABSTRACTS

[5] X-F Xu et al Nature Materials (submitted)

[6] L Lindsay, D A Broido, and N Mingo, Phys. Rev. B 82, 115427 (2010).
[7] D L Nika, S Ghosh, E P Pokatilov, and A A Balandin, Appl. Phys. Lett. 94, 203103 (2009)
[8] L Yang, P Grassberger, and B Hu, Phys. Rev. E 74, 062101 (2006).
[9] B Li and L Wang, Phys. Rev. Lett 91, 044301 (2003).
[10] S Liu, J Ren, N.-B Li, and B Li, Phys. Rev. Lett (submitted)
33
 Figures

Figure 1: The dependence of thermal conductivity of SiNWs on the longitude length Lz. The results by Nose-Hoover
method coincide with those by Langevin methods, indicating that the results are independent of the heat bath used. The
black solid curves are the power law fitting curves (linear in log-log scale). For more details see Ref [3].

Figure 2: Left: A SEM image of a thermal conductivity test fixture with a nanotube after five sequences of
(CH3)3(CH3C5H4)Pt deposition. The numbers denote the nth deposition. The inset shows the SEM image after the first
(CH3)3(CH3C5H4)Pt deposition. Right: Normalized thermal resistance vs normalized sample length for CNT (solid black
circles), best fit assuming β=0.6 (open blue stars), and best fit assuming Fourier’s law (open red circles). For more details
see Ref [4].

Figure 3: Length dependence of κ at room temperature (black solid circles) of single suspended graphene. The black linear
ABSTRACTS

line is a guide to the eyes. The black arrow and dashed line indicate the phonon mean free path. The red solid
honeycombs and squares are plotted by extracting the data calculated by Lindsay el al.[6] and Nika et al.[7], respectively.
Note that this ~ logL is only valid when L>> λ and deviations from ~ logL in the shortest samples is expected [8]. Insert:
illustration of logκ ~ logL scaling behavior for 1D, 2D and 3D systems, where thermal conductivity scales as ~L0.3 , ~logL and
constant, respectively.
34
Graphene Field-Effect Transistors on Hexagonal Boron Nitride
Operating at Microwave Frequencies

1,2 1,2 1,2 3 4

Christian Benz, Zeineb Ben Aziza, Jens Mohrmann, Emiliano Pallecchi, Andreas Betz,
5 5 4 1,2,6
Kenji Watanabe, Takashi Taniguchi, Bernard Plaçais, Hilbert von Löhneysen, and Romain
1,2
Danneau
1
Institute of Nanotechnology, Karlsruhe Institute of Technology, Karlsruhe, Germany
2
Institute of Physics, Karlsruhe Institute of Technology, Karlsruhe, Germany
3
Laboratoire de Photonique et Nanostructures, CNRS, route de Nozay, 91460 Marcoussis, France
4
Laboratoire Pierre Aigrain, Ecole Normale Supérieure, CNRS (UMR 8551), Université P. et M. Curie, Université D. Diderot,
24, rue Lhomond, 75231 Paris Cedex 05, France
5
National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
6
Institute for Solid-State Physics, Karlsruhe Institute of Technology, Karlsruhe, Germany
c.benz@kit.edu

Due to its high charge carrier mobility, graphene is an ideal candidate for devices operating at microwave
frequency [1-4]. Despite the typically low on-off ratio in graphene devices, they may perform well in
analog applications. In radio-frequency graphene field-effect transistors (RF GFETs), transit frequencies up
to 300 GHz have been reached4 and even basic integrated circuits were demonstrated [5,6].
We have investigated RF GFETs on hexagonal boron nitride (hBN). Boron nitride crystals are known to
increase the mobility by reducing scattering in graphene, since they are atomically flat. At the same time,
boron nitride serves as dielectric between the graphene sheet and pre-patterned gate electrode
(schematics: fig. 1, optical micrograph: fig. 2). It has been shown that hBN acts as a defect-free dielectric
[8]. The hBN flakes can be exfoliated down to few or even one atomic layer enabling very thin dielectrics.
Thus, a minimum of charge impurities is introduced to the graphene. Moreover, current annealing remains
possible since the graphene channel is not covered by an oxide.
Our GFETs were prepared from exfoliated mono- and bi-layer graphene with a subsequent dry transfer
technique. To improve the flatness of the flakes, we employed an all-graphene layout with graphene gate
fingers in some of the devices. Losses due to the parasitic capacitances of the coplanar waveguide
contacting pads we reduced using sapphire [9], a fully insulating substrate. Several devices with gate
lengths down to 100 nm were produced and measured (fig. 3).
Our manufacturing methods allow for integration of the graphene FETs into circuits like amplifiers or
mixers. Together with the excellent heat conduction of sapphire they are well suited for cryogenic
applications.

References

[1] Meric, I. et al., IEDM 4796738 (2008)

[2] Lin, Y.-M. et al., Nano Lett. 9 (1) (2009) 422
[3] Wu, Y. et al., Nature 472 (2011) 74-78
ABSTRACTS

[4] Liao, L. et al., Nature 467 (2010) 305

[5] Lin, Y.-M. et al., Science, 332 (2011) 1294-1297
[6] Han, S.-J. et al., Nano Lett. 11 (9) (2011) 3690–3693
[7] Wang, H. et al., IEEE Electron Device Lett. 32 (99) (2011) 1-3
[8] [8] Britnell, L. et al. arXiv 1202.0735 (2012)
[9] [9] Pallecchi, E et. al, Appl. Phys. Lett. 99, 113502 (2011)
35
 Figures

Figure 1: Crosscut schematics of the device layout.

Figure 2: Optical micrograph of one of the devices. In the center, the hexagonal boron nitride flake is visible. The inset
shows the active area of the transistor in a GSG-layout with two finger gate.

1000

100
current gain |h21|

10

1
h21
h21 (de-embeded)

0,1
0,1 1 10 100
Frequency (GHz)

Figure 3: Current gain vs. frequency for one of the devices with metallic gate.
ABSTRACTS
36
Spin-Resolved Transport Properties of
Inhomogeneous Graphene Nanostructures

Dario Bercioux
Freiburg Institute for Advanced Studies, Albertstr. 19, 79104 Freiburg, Germany

dario.bercioux@frias.uni-freiburg.de

We address the problem of spin-resolved scattering through spin-orbit nanostructures in single-layer

graphene, i.e., regions of inhomogeneous spin-orbit coupling on the nanometer scale. Our main
motivation stems from a recent experiment that reported a large enhancement of extrinsic or Rashba spin-
orbit coupling splitting in single-layer graphene grown on Ni(111) intercalated with a gold monolayer [1],
and a recent theoretical proposal that shows how the presence of indium and thallium ad-atoms can
enhance the gap associated to this intrinsic spin-orbit coupling [2].

In particular, we discuss the phenomenon of spin-double refraction and its consequences on the spin
polarization. We study the transmission properties of a single, a double interface [3] and a periodic system
[4] between a region without spin-orbit coupling – normal region – and a region with finite spin-orbit
coupling – spin-orbit region. Furthermore, we analyze the polarization properties of these systems. In the
case of the periodic system, the simple form of the band condition enables us to estimate the size of gaps
due to avoided band crossings and gives insight into the dependence of the band-structure on the width of
the potential. We also investigate band structures for the case where the lattice momentum forms a finite
incidence angle with respect to the modulation direction of the spin-orbit coupling.
Finally, we address the problem of spin and charge adiabatic quantum pumping in the presence of applied
external gate voltages. We show that under particular conditions it is possible to find parameter regimes in
which the charge current is negligible compared to the spin current [5].

References

[1] A. Varykhalov et al., Phys. Rev. Lett. 101, 157601 (2008).

[2] C. Weeks at al., Phys. Rev. X 1, 021001 (2011).
[3] D. Bercioux and A. De Martino, Phys. Rev. B 81, 165410 (2010).
[4] L. Lenz and D. Bercioux, EPL 96, 27006 (2011).
[5] D. Bercioux, D. F. Urban, F. Romeo, and R. Citro, (2012), submitted.
ABSTRACTS
37
 Electronic Cooling by 2D Acoustic Phonons in Graphene

1 1 1 1 2 2 2 1
Andreas Betz , F. Vialla , D. Brunel , C. Voisin , M. Picher , A. Cavanna , A. Madouri , G. Fève ,
1 1 1
J.-M. Berroir , B. Plaçais and E. Pallecchi
1
Laboratoire Pierre Aigrain, Ecole Normale Supérieure, 24 rue Lhomond, 75005 Paris, France
2
Laboratoire de Photonique et Nanostructures, Route de Nozay, 91460 Marcoussis Cedex, France
andreas.betz@lpa.ens.fr

We have investigated the energy relaxation of hot electrons in metallic graphene by means of noise
thermometry. For this purpose, we have carried out GHz noise measurements at high bias voltage V and
liquid helium temperature in various diffusive samples. These include CVD grown samples on Si/SiO2
substrate as well as graphene deposited on hexagonal boron nitride (hBN). Therein we measure the
current noise spectral density SI as a function of frequency in the range of f=0--0.8GHz, which we are able
to convert to electronic temperature Te. We observe Te proportional to V and proportional to square root
of V at low and high bias, respectively.

The first agrees with the electron-electron relaxation regime where heat conduction to the contacts is
given by the Wiedemann-Franz law. The second corresponds to a Te4 dependence of the cooling power. It
is the signature of a 2D acoustic phonon mechanism and the hallmark of layered conductors. In graphene,
the observation of acoustic phonons is difficult due to their weak coupling and the strong effect of optical
phonons.

The interpretation above is confirmed by a theoretical analysis of the electron to phonon cooling crossover
using the heat equation with a Σ* Te4phonon term. By solving the heat equation, assuming perfectly cold
phonons, we find the spatial temperature profiles with respect to the incoming Joule power V2/R and the
energy loss towards phonons, Σ* Te4. Via integration, we then obtain the average electron temperature Te
as a function of applied bias V.

Comparing data and theory, we deduce the coupling constant Σ, [1] which is smaller than theoretical
predictions for LA-phonons [2].

For further analysis we will finally discuss our results in terms of Fano factor F=SI/2eI, a dimensionless
quantity widely used to discuss electronic noise in mesoscopic physics. Here, I is the drain-source current.
In general, the Fano factor will increase from 1/3 to √3/4, as a sign of electron-electron interactions, then
decrease following a power law with increasing bias due to electron-phonon interactions.

Overall, these measurements give new insight into electronic cooling mechanisms in graphene and can be
helpful in the development of graphene based devices, such as graphene electronic sensors.

References
ABSTRACTS

[1] A.C. Betz et al., to be published

[2] J.K. Viljas, T.T. Heikkilä, Phys. Rev. B 81, 245404 (2010).
38
Standard deviation of the switching supercurrent
in graphene proximity junctions

Alexey Bezryadin, M. Brenner, U. C. Coskun, T. Hymel, J. Ku, V. Vakaryuk, A. Levchenko

University of Illinois, 1110 W. Green str., Urbana, USA
bezryadi@illinis.edu

Measurements of the decay statistics of metastable states is a powerful tool for revealing the intrinsic
thermal and/or quantum fluctuations of the nano-scale system. In the Josephson junctions (JJ) a
metastable dissipationless (superconducting) state decays into dissipative (phase slippage) state when the
bias current, I, reaches so-called called switching current, Isw, which is stochastic. Analysis of the
distribution of the switching current was employed to reveal macroscopic quantum tunnelling in magnetic
nanoparticles, JJs, superconducting nanowires, and intrinsic JJs in high-T_c compounds. Experimentally
observed temperature dependence of the switching current standard deviation, sigma, obtained by
measuring the switching current many times on the same sample, always follows a power law,
sigma~T^{2/3}, if the switching is induced by a single thermally activated escape from the metastable
state. However, at sufficiently low temperatures, the temperature dependence of sigma saturates, which
is usually attributed to macroscopic quantum tunnelling. In general, any power law different from 2/3 is
associated with the possibility of quantum phase slips.

We investigate the stochastic nature of switching current of superconductor-graphene-superconductor

(SGS) junctions with large critical currents, achieve by a “finger” geometry of the junction (Fig.1a). To make
samples, graphene flakes are deposited on 280 nm thick SiO2 on the Si chip surface using mechanical
exfoliation, using the Novoselov-Geim method. Raman spectroscopy is used to confirm the number of
layers. The electrodes, which have a fingered shape (Fig. 1a), are patterned from a bilayer Pd/Pb
(4nm/100nm).

We find that the standard deviation, sigma, of the switching current distribution scales with temperature
as sigma~T^alpha. The power, alpha, of the power law temperature dependence of the standard
deviation can be as low as 1/3 in graphene junctions [1]. This observation is in sharp contrast with the
known JJ behavior in which alpha=2/3, as predicted by Kurkijarvi [2]. We find an explanation to the
observed unusual power alpha within the Kurkijarvi theory itself, which we modify appropriately to apply
to our current-biased junctions. In fact, the power law in the theory is dependent not only on temperature
by also on the critical current. In tunnel junctions with superconducting electrodes the critical current is
not temperature dependent at low temperatures. But, in proximity junctions [3] (called superconductor-
normal-superconductor or SNS) the temperature dependence of the critical current persists, in theory,
down to zero temperature. According to Kurkijarvi, sigma scales with the critical current as sigma~Ic^{1/3}.
We check this explicitly, probably for the first time, using the gate voltage control, which allows us to vary
Ic in a wide diapason. The result is presented in Fig.1b. Thus, as it is established that sigma scales with the
critical current as expected from the Kurkijarvi theory, we look into the main result of the theory, namely
that sigma~T^{2/3}Ic^{1/3}. From this it follows that the power of 2/3 should be recovered if sigma,
ABSTRACTS

normalized by the temperature-dependent critical current as sigma/Ic^{1/3}, is plotted versus T. This is

indeed the case as is shown in Fig.1c. The power observed there is close to the expected 2/3. Some
fluctuations of the power with the gate voltage remain unexplained.
39
 References

[1] U. C. Coskun, M. Brenner, T. Hymel, V. Vakaryuk, A. Levchenko, A. Bezryadin, Accepted for publication in Phys. Rev.
Lett. (2012).
[2] J. Kurkijarvi, Phys. Rev. B, 6, 832 (1972).
[3] H. Meissner, Phys. Rev. Lett. 2, 458 (1959).

Figures

Figure 1: (a) A scanning electron microscope (SEM) micrograph of a “fingured” graphene junctions. Such design allows us
to increase the critical current compared to straight junctions by a large factor. The electrodes (fingers) are made of Pd (4
nm) and Pb (100 nm). Lead is used as the material for the electrodes since it provides strong superconducting proximity
effect [3] into graphene. The distance between the electrodes is about 300-400 nm. The accumulative length of the
junctions varies from sample to sample and can be as long as 200 microns. Thus the fingered design allows us to obtain
extra-long junctions. (b) Logarithm of the standard deviation of the switching current plotted versus the logarithm of the
critical current. The scaling with the power of 0.34 is observed. This is in agreement with the Kurkijarvi theoretical
prediction [2] that such power should be 0.333. (c) Normalized standard deviation plotted versus temperature. The power
is about 0.6, which is close to the theoretically expected 2/3. Some fluctuations of the power with the gate voltage, which
is the parameter for these curves, is not well understood currently.
ABSTRACTS
40
Atomic-scale model for the contact resistance
of a nickel-graphene interface

Anders Blom, Kurt Stokbro, Mads Engelund

QuantumWise A/S, Lersø Parkallé 107, 2100 Copenhagen, Denmark
anders.blom@quantumwise.com

A question of great importance for the possible use of graphene in integrated circuits is the magnitude of
the contact resistance between graphene and metal electrodes, since a high contact resistance would limit
the performance of field-effect transistors [1]. Several experimental studies have investigated the topic,
but there is no clear consensus on the value or the dependence of the contact resistance on contact area,
temperature and applied gate potential. There is therefore a need for complementary theoretical studies
which can give insight about the physical mechanisms at play at the metal-graphene interface.

Earlier first-principles calculations have focused on charge transfer between the metal and the graphene
[2–5], but in this paper we aim to add new knowledge to the understanding of the graphene-metal contact
by investigating the effect of covalent bond formation on the contact resistance. Graphene forms a strong
covalent bond with nickel [2] which is similar to the bond formation between graphene and cobalt,
palladium and titanium, thus, the theoretical predictions will also be relevant for these systems.

We will present quantum transport calculations of electron transfer from a free suspended graphene
sheet to a nickel contact through different metal-graphene contact geometries, where we vary the
orientation of the graphene and the contact area. We find that the contact resistance is independent of
the orientation of the graphene, as well as of the contact area to the metal, in qualitative agreement with
recent experimental observations [6].

Our calculations [7] show that indeed the low-field contact resistance is independent of the contact area,
as well as of the direction of the graphene sheet. The edge contact resistance is about 30 Ωµm,
corresponding to twice the ideal quantum contact resistance of pure graphene. We predict that this
observation is generic for strongly bonded graphene, since we also see the same resistance when using a
model contact between graphene and a hydrogen crystal or two overlapping graphene sheets.

We suggest that our obtained contact resistance is the theoretical limit for an ideal bond between nickel
and graphene. This value is still rather far from experimentally observed values, which indicates that the
experiments do not deal with ideal contacts – impurities and defects are in all likelihood important factors
to consider. But our calculations do suggest that, however formidable the problems in forming a good
contact are, the challenge is still practical rather than fundamental.
ABSTRACTS
41
 References

[1] F. Xia, D. B. Farmer, Y.-M. Lin, and P. Avouris, Nano Lett., 10, 715 (2010).
[2] P. A. Khomyakov et al., Phys. Rev. B, 79, 195425 (2009).
[3] S. Barraza-Lopez et al., Phys. Rev. Lett., 104, 076807 (2010).
[4] J. Maassen, W. Ji, and H. Guo, Appl. Phys. Lett., 97, 142105 (2010).
[5] Q. Ran, M. Gao, X. Guan, Y. Wang, and Z. Yu, Appl. Phys. Lett., 94, 103511 (2009).
[6] K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi, Appl. Phys. Lett., 97, 143514 (2010).
[7] The transport calculations where performed with Atomistix ToolKit, version 12.2, QuantumWise A/S (2012).

Figures

Figure 1: Top view (B-C plane) and side view (A-C plane) of one the systems investigated in this paper, viz. a zigzag edge
graphene on top of a Ni(100) surface with 4 Å binding overlap. The transport direction is along the C direction. The red
curve shows the average electrostatic potential in the vacuum region.

Figure 2: Transmission coefficient per transverse line segment at zero bias for the four different systems studied (the
geometry of Fig. 1 is (a) here). Also shown is the transmission coefficient of an ideal graphene sheet.
ABSTRACTS
42
Exfoliation and Sorting of Graphite flakes and inorganic
two-dimensional materials

1 1 1 2 1 1 3
F. Bonaccorso , F. Torrisi , G. Privitera , V. Nicolosi , T. Hasan , G. Savini , N. Pugno and
1
A.C. Ferrari
1
Department of Engineering, University of Cambridge, JJ Thomson avenue, Cambridge CB3 0FA, UK
2
School of Chemistry, School of Physics & CRANN Trinity College Dublin Dublin 2 Ireland
3
Dept. of Structural Engineering, Corso Duca degli Abruzzi 24, 10129 Torino, Italy

fb296@cam.ac.uk

Liquid-phase exfoliation of graphite [1] is a promising tool for mass production of single and multi-layer
graphene flakes, as well as inks [2], thin films [1], and composites [3,4]. Here we report high yield
production of graphene via low power sonication of graphite in sodium deoxycholate (SDC) followed by
ultracentrifugation. There are two main approaches to ultracentrifugation: sedimentation-based
separation (SBS) and isopycnic separation. The former discriminates particles by their difference in mass.
The latter exploits density differences between particles in a density gradient medium [5,6]. Our results
suggest that graphite exfoliation via sonication produces flakes with lateral sizes increasing with the
number of layers. We thus exploit SBS to separate graphite flakes by number of layers [8]. TEM and Raman
spectroscopy indicate that ~65% of the flakes produced by SBS are monolayer with average size ~600nm2
[9,10]. Isopycnic separation allows us to obtain larger flakes than SBS. This requires the creation of density
differences between flakes with different number of layers. Surfactants provide this density variation [11].
In this case, sorting is strongly dependent on the surface/volume ratio and the coverage and clustering of
the surfactant molecules. SDC is the most effective surfactant for exfoliation and sorting of graphite flakes,
with ~60% of the flakes in the topmost fraction being monolayers, with average size 1μm2.
Ultracentrifugation can also be used to sort nanodiamonds in terms of shape and dimensions, and can also
be applied to inorganic layered materials, such as Boron Nitride, Tungsten Disulfide, Molybdenum
Disulfide, etc.[12].

References

[1] Y. Hernandez et al. Nature Nano, 3 (2008) 563.

[2] F. Torrisi, et al., arXiv:1111.4970v1 (2011).
[3] T. Hasan, et al., Adv. Mater. 21 (2009) 3874.
[4] T. Hasan, et al. Phys. Status Solidi B 247 (2010) 2953.
[5] M. S. Arnold et al., Nat. Nano 1 (2006) 60.
[6] F. Bonaccorso et al., Journal of Physical Chemistry C 114 (2010) 17267
[7] R. W. Fox, A. T. McDonald, P. J. Pritchard, Introduction to Fluid Mechanic, Wiley, 6 Edition (2003) ISBN 0471202312
[8] F. Bonaccorso et al. submitted (2012).
ABSTRACTS

[9] O.M. Marago’ et al., ACS Nano, 4 (2010) 7515.

[10] F. Bonaccorso et al., Nature Photonics 4 (2010) 611.
[11] A. A. Green et al, Nano Lett. 9 (2009) 4031.
[12] J.N. Coleman et al. Science 331 (2011) 568.
43
 The atomic and electronic structure of well-defined graphene
nanoribbons studied by scanning probe microscopy

a a a b a
M.P. Boneschanscher , J. vd Lit , Z. Sun , P. Liljeroth and D.Vanmaekelbergh
a
Condensed Matter and Interfaces, Debye Institute for Nanomaterials Science, Utrecht University,
PO Box 80000, 3508 TA Utrecht, The Netherlands
b
Department of Applied Physics, Aalto University School of Science, 00076 Aalto, Finland
m.p.boneschanscher@uu.nl

Despite the recent interest in graphene, there is still a lack of experimental studies on the electronic
properties of atomically well defined graphene nanostructures. In order to have full control over the size,
shape and edges of graphene nanostructures we use a chemical approach [1] to grow graphene
nanoribbons (GNRs) on a gold (111) substrates. The GNRs have a fixed width and edge termination as
determined by the choice of chemical precursor, resulting in armchair edges along the long axis of the
ribbon and zigzag ends along the short axis.

We studied the GNRs using scanning tunneling microscopy and spectroscopy as well as atomic force
microscopy. We measured the atomic structure of individual GNRs and spatially resolved the local density
of states at different energy values. We find that the electronic states of the GNRs close to the Dirac point
are located at the zigzag ends of the nanoribbons, whereas the states far away from the Dirac point are
located mostly along the armchair edges (figure 1). Comparison of our experimental results with density
functional theory indicates that the states at the zigzag ends are spin polarized whereas the states along
the armchair edge are spin degenerate.

References

[1] J. Cai et al., Nature, 446 (2010) 470-473.

Figures
ABSTRACTS

Figure 1: Energy spectroscopy on a GNR (left). Mapping the local density of states shows that states around the Dirac
point are localized on the zigzag ends of the ribbon, while states far away from the Dirac point are more localized along
the armchair edges (right top). The model for the GNR indicating the armchair edges in blue and the zigzag ends in red
shown together with an AFM image of the atomic backbone of one of the GNRs (right bottom).
44
Channeling of graphene in environmental TEM:
towards zero-disorder nanolithography

Tim J. Booth, Filippo Pizzocchero, Marco Vanin, Henrik Andersen, Thomas W. Hansen, Jakob B.
Wagner, Joerg R. Jinschek, Rafal E. Dunin-Borkowski, Ole Hansen and Peter Bøggild
DTU Nanotech, Technical University of Denmark, Kgs. Lyngby, Denmark
tim.booth@nanotech.dtu.dk

Catalytic channeling of graphene by metallic nanoparticles is unique due to the tendency of the trenches
to follow the graphene lattice orientations, and the possibility of forming long trenches in graphene with a
width of a few nanometers, sub-nanometer edge roughness and consistent lattice orientation. We have
studied the rich and complex microscopic behaviour of silver nanoparticle gasification in in-situ
environmental transmission electron microscopy and account for some of the observed trends and
phenomena, including the “shot-noise”-like discrete removal of carbon atoms from the graphene lattice
resulting in Poisson distributed temperature dependent instantaneous measured particle velocities [1],
and the fact that nearly all edges have zig-zag orientation.

With the support of DFT calculations, we identify the rate limiting step to be the removal of carbon atoms
from zig-zag edges. Other phenomena remain to be explained, such as the curious fact that the
characteristic shape of even large silver particles appear to be determined by the 1D graphene-silver
interface involving just a few hundred atoms. In the light of these findings, the scientific challenges and
technological opportunities involved in turning this process into a zero-disorder nanolithographic
technique are discussed.

References

[1] Tim J. Booth, Filippo Pizzocchero, Henrik Andersen, Thomas W. Hansen, Jakob B. Wagner, Joerg R. Jinschek, Rafal E.
Dunin-Borkowski, Ole Hansen and Peter Bøggild, Nano Letters 11 (2011) 2689
[2] Filippo Pizzocchero, manuscript in preparation.
ABSTRACTS
45
 Figures

Figure 1: TEM images of the transition between monolayer and bilayer etching (and vice versa) within a single channel.
These footprints of the interface of the silver particles in the graphene are triangular in shape with <100> orientated
edges, parallel to the zigzag direction of the graphene lattice. Highlighted angles in (b) 120o. Scale bars 5nm. c) A
schematic representation of the catalytic etching process. (i) The oxygen molecules interact with the silver nanoparticles.
(ii) After being adsorbed, the oxygen may dissociate. The atomic oxygen formed diffuses on the surface of the particle,
possibly reaching the silver-graphene interface where it interacts with the carbon edge atoms. (iii) Carbon at the edge
reacts with the oxygen at the interface and is gasified in the molecular form COx leaving a void which the catalyst particle
moves to fill. (iv) Schematic representation of changes in the number of layers removed, c.f. (a,b) d-e) The triangular front
of etching particles is clearly visible in these images. Scale bars 25 nm and 20 nm respectively.

Figure 2: a) A three dimensional representation of the structure used in the DFT calculation. b-c) Schematic 2D projections
of the structure shown in (a). In particular, in (b) the shape of the step is clear, while in (c) the position of the graphene
flake with respect to the silver edge is exemplified. d-e) Scale representations in the ZY plane of the actual DFT relaxed
graphene-silver interfaces for the armchair and zigzag edges respectively. In (d) two unit cells are shown, with one in (e).
ABSTRACTS
46
Graphene technology for future mobile devices

Stefano Borini, Di Wei, Samiul Haque, Alan Colli, Piers Andrew, Jani Kivioja
Nokia Research Center, 21 JJ Thomson Av., Cambridge,UK
stefano.borini@nokia.com

Due to its various and outstanding peculiar properties, graphene is expected to provide a technological
platform which will enable the development of new materials and applications. Therefore, radical
advancements and innovations beyond state-of-the-art technologies can easily be envisaged, based on the
strong driving force already demonstrated by graphene science in a plenty of R&D fields.
Some main opportunities that could be provided by graphene technology for the development of future
mobile devices will be presented, with special emphasis on the applications in energy harvesting and
storage.
Indeed, graphene represents an ideal material for the development of portable energy storage devices,
thanks to the high specific surface area, the superior electrical conductivity, a high chemical tolerance and
a broad electrochemical window. In addition, graphene is a “solution-processable” material, thus allowing
the preparation of colloid suspensions suitable for printing applications. Results on functionalized
graphene inks [1] and on the realization of graphene-based flexible lithium batteries [2] (see fig.1) will be
shown, demonstrating the potential of graphene technology in the field of energy storage.
Moroever, graphene-based transparent electrodes for organic photovoltaic cells, together with the
peculiar photo-thermoelectric effect observable in graphene p-n junctions, are likely to provide new
opportunities in the realization of energy harvesting devices. Possible perspectives for mobile devices
technology within such a field will be illustrated.
Finally, a broader outlook on possible graphene-driven radical innovations in the development of future
mobile devices will be given.

References

[1] D. Wei et al.,, Chem. Commun., 48 (2012) 1239.

[2] D. Wei et al., J. Mater. Chem., 21 (2011) 9762.

Figures
ABSTRACTS

Figure 1: Realization of a lithium battery based on graphene ink cathode and polymer electrolyte (from Ref.[2])
47
 Boron and nitrogen doping of graphene
from first principles

Andrés R. Botello-Méndez, Bing Zheng, Xavier Declerck, Aurelién Lherbier, Luc Henrard and
Jean-Cristophe Charlier
Institute for condensed Matter and Nanosciences, Université catholique de Louvain,
Chemin des étoiles 8, 1348 Louvain la neuve, Belgium
andres.botell@uclouvain.be

The modification of the electronic properties of sp2 carbon nanostructures by the controlled addition of
foreign atoms into the carbon lattice has been widely proposed and investigated [1,2], in close analogy to
the doping of silicon in the semiconductors industry. However, in contrast with conventional materials, the
effect of foreign atoms in nanostructures is expected to depend significantly on the position and
surrounding of each atom due to the quantum confinement of the electrons [2]. In principle, the fact that
nitrogen atoms contain one additional electron than carbon, suggests that nitrogen doped carbon
nanostructures will exhibit the characteristics of an n-type material [3,4]. Similarly, boron atoms which lack
of one electron with respect to carbon atoms are good elements to achieve a p-doped material [2].
Furthermore, recent experiments on graphene reveal through scanning tunneling microscopy (STM)
images, that B and N doping can occur in different kinds of geometries [5,6].

This work explores different configurations for nitrogen and boron atoms incorporated onto graphene,
and investigates their effects and properties using ab-initio electronic structure calculations. The
computed total and local density of states reveal specific signatures for each type of defect, which could
be correlated with experimental scanning tunneling spectroscopy (STS) measurements. In addition, STM
images are presented in order to aid the eventual large scale identification of these defects.

Our calculations, and recent experimental observations suggest that the classically assumed nitrogen
incorporations into graphitic structures (i.e., single substitution and pyridinic), are not necessarily the most
common. It is generally true, however, that substitution defects (single, double substitution) dopes
graphene with electrons, and vacancy-nitrogen complexes (e.g. pyridinic, or single nitrogen + vacancy) add
holes to the system. In contrast, boron atoms are usually found in substitution for carbon atoms in
graphene. However, these are rarely observed isolated, but rather showing a tendency to form islands.

In summary, we present an extensive study of the properties of different kinds of boron and nitrogen
doping in graphene. We show that the structural details of the incorporated atoms can be extremely
important for the electronic properties of the resulting doped material. In addition we show that specific
fingerprints in STM and STS analysis can be obtained accurately from ab-initio calculations.
ABSTRACTS
48
References

[1] P. Ayala, R. Arenal, A. Loiseau, A. Rubio, and T. Pichler, Rev. Mod. Phys. 82 (2010), p. 1843.
[2] M. Terrones, A. Filho, A. Rao. Doped Carbon Nanotubes: Synthesis, Characterization and Applications in Carbon
Nanotubes Springer 2008, pp. 531-566.
[3] P. Ayala, R. Arenal, M. Rümmeli, A. Rubio, and T. Pichler, Carbon, 48 (2010), pp. 575-586.
[4] J-Y. Yi and J. Bernholc. Phys. Rev. B, 47 (1993), p. 1708.
[5] L. Zhao, et al. Science, 333 (2011), pp. 999-1003.
[6] D. Deng, et al. Chem. Mater., 23 (2011), pp. 1188–1193.

Figures

Figure 1: Schematic image showing the different kinds of doping structures for both nitrogen and boron in graphene.

ABSTRACTS
49
 Field-effect tunneling transistor based
on vertical graphene heterostructures

L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, A. Mishchenko, T. Georgiou, M. I.

Katsnelson, L. Eaves, S. V. Morozov, N. M. R. Peres, J. Leist, A. K. Geim, K. S. Novoselov, L. A.
Ponomarenko
School of Physics & Astronomy, University of Manchester, Manchester M13 9PL, UK
liambritnell@gmail.com

An obstacle to the use of graphene as an alternative to silicon electronics has been the absence of an
energy gap between its conduction and valence bands, which makes it difficult to achieve low power
dissipation in the OFF state. We report a bipolar field-effect transistor that exploits the low density of
states in graphene and its one atomic layer thickness. Our prototype devices are graphene
heterostructures [1,2] with atomically thin boron nitride or molybdenum disulfide acting as a vertical
transport barrier. They exhibit room temperature switching ratios of ≈50 and ≈10,000 respectively. Such
devices have potential for high frequency operation and large-scale integration.

Our typical device vertical transistor architecture is as follows: we use graphene electrodes and a thin
dielectric layer separating them in a vertical arrangement, with current flow perpendicular to the
graphene’s basal plane, figure 1. The two graphene electrodes are etched into Hall bar geometry so that
we can measure the transport properties of the graphene leads, figure 2.

We are able to measure tunneling through the barrier—typically a few nanometers thick—by varying a
bias voltage between the graphene electrodes. The application of a gate voltage dramatically alters the
tunneling characteristics of the device, figure 3.

We explain the changes in the tunneling characteristics in our devices by a simple model [1,3] comprising
three effects. (i) Movement of the Fermi level in both graphene electrodes (ii) movement of the relative
position of their electronic bands and also (iii) lowering the effective barrier height. These combined
effects result in a large increase in the leakage current between the graphene electrodes. The best device
we have fabricated using hBN has a modest on/off ratio of ~50 and our first MoS2 devices show a much
improved ON/OFF ratio of ~104.

These devices are promising in development of the much vaunted application of graphene logic circuits,
allowing miniturisation and high speed operation as the expected transition time for carriers is expected to
be on the order of femtoseconds [4].

References
ABSTRACTS

[1] L. Britnell et. al., Science (2012) doi:10.1126/science.1218461 and Supporting material.
[2] P. A. Ponomarenko et. al., Nature Physics 7 (2011) 958–961.
[3] J. G. Simmons, J. App. Phys 34 (1963) 1793-1803.
[4] J. A. Simmons et al.,J. Appl. Phys. 84, (1998) 5626-5634
50
Figures

Figure 3: Tunneling characteristics for

Figure 2: Graphene as a tunneling
electrode. (A) Resistivities of the
source and drain graphene layers as a
function of Vg (B-D) Carrier
concentrations in the two layers
induced by gate voltage, which were
calculated from the measured Hall
resistivities. The shown device has a
4-layer hBN barrier.
↑ Figure 1: Graphene field-effect tunneling
transistor. (A) Schematic structure of our
experimental devices. In the most basic version of
the FET, only one graphene electrode (GrB) is
essential and the outside electrode can be made
from a metal. (B) The corresponding band structure
with no gate voltage applied. (C) The same band
a graphene-hBN device with 6±1
layers of hBN as the tunnel barrier.
(A) I-Vs for different Vg (in 10 V
steps). Note, that due to the finite
doping, the minimum tunneling
conductivity is achieved at Vg≈3V.
The inset compares the experimental
I-V at Vg=5V (red curve) with theory
(dark) which takes into account the
linear DoS in the two graphene layers
and assumes no momentum
conservation. Further examples of
experimental curves and their fitting
can be found in Supporting online
material of reference (). (B) Zero-bias
conductivity as a function of Vg. The
symbols are experimental data, and
the solid curve is our modeling.
ABSTRACTS

structure for a finite gate voltage Vg and zero bias

Vb. (D) Both Vg and Vb are finite. The cones illustrate
graphene’s Dirac-like spectrum and, for simplicity,
we consider the tunnel barrier for electrons. (E) An
artistic schematic of our vertical transistor devices.
51
 Graphene synthesis using alcohol precursors

Jessica Campos Delgado, Andrés Botello-Méndez, Benoit Hackens, Thomas Pardoen,

Jean-Christophe Charlier, Jean-Pierre Raskin
Université catholique de Louvain, 1348 Louvain-la-Neuve, Belgium
jessica.campos@uclouvain.be

Although the production of graphene through the mechanical exfoliation of graphite allowed the
availability of graphene for fundamental studies, its applications where limited by the small flake sizes and
low yield. Alternative routes to the production of graphene were imminent.

The most popular alternative route saw the light in 2009 when the chemical vapor deposition (CVD)
synthesis of graphene was reported using polycrystalline nickel as catalyst and methane as carbon source
at low pressures [1-2]. Later that year the growth using commercial Cu foils was reported [3]. The
synthesis technique relies on the decomposition of methane at ~1000°C at low pressure and its deposition
on the metal catalysts. While on Ni the solubility of C is high, the growth mechanism is through the
segregation and precipitation of carbon once the Ni is cooled down; in contrast, Cu has a low C solubility
and the growth is mediated by surface adsorption [4].

Besides methane (CH4) other carbon precursors have been used in the synthesis of graphene. Reports of
solid and liquid sources appear in the literature [5-6]. The above listed precursors are used in experiments
at low pressure conditions (mTorr) and generally pure Ar and H2 or Ar-H2 mixtures are involved in the
synthesis, which require a sophisticated set-up with pumping system, 2-3 gas lines available, flow meters,
and proper piping for contents higher that 5% of H2 because of safety issues.

Here we describe the synthesis of graphene via the thermal decomposition of alcohols at atmospheric
pressure, using copper foils as catalyst and a single gas inlet consisting of a gas mixture of Ar-H2 with a safe
concentration of H2 (5%).

We have investigated the growth of graphene using two liquid precursors: 2-phenylethanol and ethanol.
Commercial copper foils of 25 μm-thick have been purchased; after mild cleaning such foils are placed in
the growth chamber set to temperatures of 950°C-980°C, the decomposition of the alcohols at this
temperature leads to the growth of graphene on copper. We have studied the as-produced samples by
means of scanning electron and optical microscopy. To perform further studies we transferred the
samples to Si/SiO2 substrates using FeCl3 as copper etchant and PMMA as support/protection layer. The
transferred films have been characterized using optical microscopy, Raman spectroscopy, and atomic force
microscopy.

In Figure 1A, we show a scanning electron microscopy image of a film of graphene on copper grown from
ABSTRACTS

ethanol. The typical wrinkles originating from the mismatch in thermal expansion coefficients of both
materials are evident. Etching of copper and transference of the graphene film have been carried out. An
optical image of a transferred film depicted in Figure 1B shows uniformity at a large scale.
52
In order to verify the sp2 nature and quality of the produced material we perform Raman spectroscopy
measurements on the transferred films (Figure 1C). The high intensity of the 2D (G’) band reveals the
presence of monolayer graphene.

In this work, we will expose in detail the synthesis and transfer procedures, our results obtained by several
characterization techniques, and we will compare the quality of the synthesized materials depending on
the alcohol used as precursor.

References

[1] A. Reina, X. Jia, J. Ho, D. Nezich, H. Son, V. Bulovic, M.S. Dresselhaus, J. Kong. Large area, few-layer graphene films on
arbitrary substrates by chemical vapor deposition. Nanoletters 9 (2009) 30-35.
[2] K.S. Kim, Y. Zhao, H. Jang, S.Y. Lee, J.M. Kim, K.S. Kim, J.-H. Ahn, P. Kim, J.-Y. Choi, B.H. Hong. Large-scale pattern
growth of graphene films for stretchable transparent electrodes. Nature 457 (2009) 706-710.
[3] X. Li, W. Cai, J. An, S. Kim, J. Nah, D. Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S. K. Banerjee, L. Colombo, R.S.
Ruoff. Large-area synthesis of high-quality and uniform graphene films on copper foils. Science 324 (2009) 1312-
1314.
[4] X. Li, W. Cai, L. Colombo, R.S. Ruoff. Evolution of graphene growth on Ni and Cu by carbon isotope labeling.
Nanoletters 9 (2009) 4268-4272.
[5] Z. Sun, Z. Yan, J. Yao, E. Beitler, Y. Zhu, J.M. Tour. Growth of graphene from solid carbon sources. Nature 468 (2010)
549-552.
[6] A. Guermoune, T. Chari, F. Popescu, S.S. Sabri, J. Guillemette, H.S. Skulason, T. Szkopek, M. Siaj. Chemical vapor
deposition synthesis of graphene on copper with methanol, ethanol and propanol precursors. Carbon 49 (2011)
4204-4210.

Figures

Figure 1: Characterization of the produced graphene films. A) Scanning electron micrograph of the graphene film on
copper right after synthesis. B) Optical microscopy image at 100x of the transferred graphene film (in light purple color)
on a Si/SiO2 substrate, a crack at the left up corner leaves visible the substrate. Bluish traces correspond to PMMA
residues. C) Raman spectroscopy spectra recorded at different spots of the transferred film.
ABSTRACTS
53
 Theory and hierarchical modeling of defective graphene,
the effects of grain boundaries and oxidation

1 2 3
Johan Carlsson , Luca Ghiringhelli and Annalisa Fasolino
1
Accelrys Ltd, 334 Science Park, CB4 OWN Cambridge, UK
2
Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
3
Institute for Molecules and Materials, Radboud University Nijmegen, Heyendaalseweg 135, 6525 AJ Nijmegen,
The Netherlands
johan.carlsson@accelrys.com

Graphene has extraordinary properties, but utilizing these properties in electronic applications requires
the ability to grow large scale, defect-free graphene sheets. The ground breaking method to exfoliate
graphene sheets from graphite crystals do provide defect-free graphene sheet over large length scales, but
this method is not suitable for industrial scale production. Several other routes are currently pursued to
synthesize graphene, such as annealing of SiC, CVD growth or oxidation of graphite, but the samples
created in these ways are often found to be polycrystalline and may contain a variety of defects and
functional groups. These defects in the as-grown polycrystalline graphene samples can, on the one hand,
be detrimental for the properties of graphene, but on the other hand, offer a method to control its
mechanical and electronic properties. However, the graphene research has up to now been focusing on
perfect graphene and as-grown, defective graphene has only recently started to obtain some attention.
Point defect in graphene may be generated by electron beam irradiation [1], but grain boundary
engineering at the atomic level is still very challenging because no general theory is available, which is able
to describe the various structures that have been observed in experiments. Scanning tunnelling
microscopy (STM) investigations of a variety of [0001] tilt grain boundaries in graphene have shown that
small angle grain boundaries have the shape of periodic arrays of asymmetric hillocks with large
separation as demonstrated in Fig. 1a) [2], while a grain boundary with a misorientation angle q = 21°
could be characterized as a flat array of 5-7 ring complexes [3] and a grain boundary with a misorientation
angle of 60° had the shape of an array of 5 and 8 rings [4]. The shape and properties of the defects may be
further tailored by controlled oxidation [5], as the basal plane of graphene is inert towards molecular
oxygen and only vacancies are etched by O2 [6]. However, oxidation of graphene is a very complex process,
where the individual steps are not yet completely understood.
In order to improve the understanding of imperfect graphene, we have investigated the shape and effects
of point defects and grain boundaries in graphene and how oxidation influence as-grown graphene.
Our density-functional (DFT) calculations using the DMol-code showed that point defects in graphene form
a complex of non-hexagonal rings in the hexagonal graphene lattice [7]. Further analysis revealed that
these defects form semi-localized defect states, indicating that defects in graphene would have an
increased chemical activity, which was later confirmed by our investigation of oxidation of graphene [8].
In addition, we have developed a general theory for the structure of [0001] tilt grain boundaries in
graphene based on the coincidence site lattice (CSL)-theory [9]. The CSL-theory is convenient to derive
supercell models for grain boundaries and we have implemented the method into a script in Materials
Studio [10]. The script is able to generate grain boundary models for a particular misorientation angle q
ABSTRACTS

with two grain boundaries per supercell. The structure of a large set of the grain boundary models were
geometry optimized by force field and bond order potential calculations and selected models were also
optimized by DFT calculations using the CASTEP-code for reference. Our force field and DFT calculations
show that low energy grain boundaries in graphene can be identified as dislocation arrays. Grain
boundaries with small misorientation angles tend to form hillocks as shown in Fig. 1b). This occurs due to
the strain at the dislocation cores in agreement with STM observations of small misorientation angle grain
54
boundaries in epitaxial grown graphene [2]. Our calculations have also shown that contrary to the usual
bulk behaviour, in graphene there is an attractive interaction between dislocation cores that decreases the
strain energy, so that the dislocation arrays form ridges for misorientation angles 10°<q <25° and flatten
out for misorientation angles larger than q =25°. The structure of the grain boundary corresponding to the
STM observation in [4] is then approximately a flat array of 5-7 dislocation core rings. The attractive
interaction decreases the formation energy for grain boundaries with large misorientation angles so that a
minimum occurs for S=13 at q =32.2°.
Finally, we have investigated oxidation of graphene. Our DFT calculations using the CASTEP-code showed
that dissociation of O2 of the basal plane of graphene is strongly endothermal, which provides an
explanation to the inertness of defect-free graphene [8]. Further calculations for oxidation of vacancies
indicated that low temperature etching of graphene proceeds through a two-step mechanism. Bare
vacancies are very reactive towards O2 as our previous analysis indicated [7]. The O2 molecules get
dissociated, such that the vacancies quickly get saturated by ether and carbonyl groups. These O-groups
are stable with respect to CO-desorption below the critical temperature Tc, and they can be considered as
the ground state in an oxygen atmosphere. The saturation of the bare vacancies is the first step in the
oxidation reaction. The oxygen saturated vacancies are less reactive towards oxygen compared to the bare
vacancies, but significantly more reactive than the basal plane. The oxygen molecules can be dissociated at
the ether groups and this leads to the formation of larger O-groups, primarily lactones, which either
desorb directly as CO2 or the lactones are further activated by additional O2 dissociation forming anhydride
groups. The anhydride groups decompose rapidly and the CO2 desorption exposes new sites for O2-
dissociation, thus driving the etching reaction further. The dissociation of the oxygen molecules at the
ether groups forming lactones and anhydrides is the second step in the oxidation process.

References

[1] A. Hashimoto, K. Suenaga, A. Gloter, K. Urita, and S. Iijima, Nature 430 (2004) 870.
[2] J. Coraux, A. T. N'Diaye, C. Busse, and T. Michely, Nano Lett. 8 (2008) 565.
[3] P. Simonis, C. Goffaux, P. A. Thiry, L. P. Biro, P. Lambin, and V. Meunier, Surf. Sci. 511 (2002) 319.
[4] J. Lahiri, Y. Lin, P. Bozkurt, I. I. Oleynik, and M. Batzhill, Nature Nanotech. 5 (2010) 326.
[5] A. Böttcher, M. Heil, N. Stürzl, S. S. Jester, S. Malik, F. Perez-Willard, P. Brenner, D. Gerthsen, and M. Kappes,
Nanotech. 17 (2006) 5889.
[6] J. R. Hahn, Carbon 43 (2005) 1506.
[7] J. M. Carlsson and M. Scheffler, Phys. Rev. Lett. 96 (2006) 046806.
[8] J. M. Carlsson, F. Hanke, S. Linic and M. Scheffler, Phys. Rev. Lett. 102 (2009) 166104.
[9] J. M. Carlsson, L. M. Ghiringhelli, and A. Fasolino, Phys. Rev. B 88 (2011) 165423.
[10] Materials Studio release 5.5, Accelrys Software Inc., San Diego, USA (2010).

Figures ABSTRACTS

Figure 1: a). STM observation of the hillocks at a small angle grain boundary in graphene taken from [1]. b) Optimized
structure of the atomistic grain boundary model having the same misorientation angle as the experiment. Taken from [4].
55
 Solution Processable Graphene and Other Two Dimensional
Materials for Energy Applications

Manish Chhowalla
Rutgers University, Department of Materials Science and Engineering, Piscataway, NJ 08854, USA

Manish1@rci.rutgers.edu

Chemical exfoliation of layered two-dimensional materials such as graphite and transition metal
chalcogenides allow access to large quantities of atomically thin nanosheets that have properties that are
distinctly different from their bulk counterparts. Although 2D materials have recently become popular,
their fabrication via exfoliation of bulk crystals has been known for decades. For example, Brodie first
exfoliated graphite into atomically thin oxidized form of graphene in 1859. In the case of layered transition
metal dichalcogenides (LTMDs) such as MoS2, WS2, MoSe2, WSe2, etc., Frindt et al. performed seminal
work in the ‘70s and ‘80s. We have revived these techniques to obtain a wide variety of chemically
exfoliated two-dimensional nanosheets and utilized these materials in wide variety of electronic and
energy applications. In this presentation, I will highlight some of our key contributions with graphene
oxide (GO) and LTMD nanosheets. Specifically, I will present their implementation into large area
electronics, strategic implementation into solar cells, and as catalysts.
ABSTRACTS
56
Applications of Graphene-based Materials

Gary Economo and Gordon Chiu

Grafoid Inc., 912-130 Albert Street, Ottawa, Canada

gary@grafoid.com
dr.chiu@grafoid.com

Chemistry, and the optimization of graphene processes when combined with the world’s best graphite
feedstock are leading Grafoid towards a benchmark global standard for economically scalable, mass
produced graphene.

Hummer’s method resolves the scalability issue for graphene oxide but sacrifices quality. Growing
graphene via chemical vapor deposition produces high quality graphene, but fails on economics. The
challenge for scientists today is to produce pristine graphene for fifty cents per pound or less – down from
its current cost of $20,000 per pound.

Our research is leading us towards that goal. As applications in the scientific, medical, consumer, military
and industrial sectors flourish and multiply, the need for a standardized, scalable process grows ever
greater.

As a wonder material, graphene’s role in energy storage - as the next anode material for lithium ion
batteries to its role in ultra capacitors – is well known.

Eliminating costs is the key to commercial success. Universal market acceptance by the investment
community will come once mass producers of automobile, electronics and infrastructural components are
assured of a sustainable, low-cost, viable graphene source.

ABSTRACTS
57
 Inducing magnetism in graphene
in a view of spintronics

1 1 2 3 4,5 1
H. X. Yang , D. Terrade , D. W. Boukhvalov , X. Waintal , S. Roche and M. Chshiev
1
SPINTEC, CEA/CNRS/UJF-Grenoble, INAC, 17 rue des Martyrs, 38054 Grenoble, France
2
Korea Institute for Advanced Study (KIAS), Hoegiro 87, Dongdaemun-Gu, Seoul 130-722, Korea
3
CIN2 (ICN-CSIC) and Universitat Autonoma de Barcelona, Catalan Institute of Nanotechnology, Campus de la UAB, ES-
08193 Bellaterra (Barcelona), Spain
4
ICREA, Institucio Catalana de Recerca i Estudis Avancats, ES-08010 Barcelona, Spain
mair.chshiev@cea.fr

Graphene has emerged as one of the most promising material for developing "beyond CMOS"
nanoelectronics [1]. It is very attractive for spin electronics (spintronics) [2] since long spin lifetimes are
expected within this material due to its intrinsic weak spin-orbit coupling. Inducing magnetism in
graphene, however, remains one of the most challenging problems for its applications to spintronics.
Magnetic states in graphene can be induced using magnetic substrates, e.g. transition metals Co and Ni
[3]. For instance, interesting perpendicular magnetic anisotropy properties of Co/graphene interfaces have
been reported [4]. However, growing on conducting substrates limits graphene applications for electronic
devices. Alternative possibilities are to use magnetic insulating material EuO as a substrate [5] or to
explore shape induced magnetism in graphene nanomesh structures [6,7] inspired by recent reports on
possibility of inducing localized spin polarization and magnetic moments at one-dimensional zigzag edges
in graphene nanoribbons [8]. Here we present first principles investigations of both substrate and shape
induced magnetism and report promising potential for producing high spin polarization and exchange
splitting values [7].

Our calculations were performed using Vienna Ab-Initio Simulation Package (VASP) which is based on
density functional theory with generalized gradient approximation for exchange correlation and projector
augmented wave based pseudopotentials [9]. All calculations have been performed to ensure the
Hellman-Feynman forces acting on carbon atoms to be less than 10-3 eV/Å.

First, magnetic properties in graphene nanomesh structures (GNM) will be presented. For pure GNM, non-
spin-polarized states are found stable in armchair-type edges while antiferromagnetic states are found
stable for balanced zigzag edge structures. Furthermore, an unbalanced edge structure shows stable
ferrimagnetic state giving rise to a net magnetic moment up to 4 uB per 6 x 6 unit cell. We also found the
gap opening in the balanced zigzag edge GNMs which may reach up to 0.40 eV. For hydrogen terminated
GNM, we found that the ground state strongly depend both on the hole size and shape. For instance, a
large net magnetic moment (~2.15µB and ~3.62µB) is induced in the ground state for GNM with pentagon
and trianglular shaped holes shown in Fig. 1(h) and (c), respectively. At the same time, the ground state is
found to be paramagnetic for GNM with rhombic and 6-ring shaped holes represented in Fig. 1(f) and (e).
Interestingly, the net magnetic moment for GNM with intermediate between trianglular and rhombic
ABSTRACTS

shaped holes is equal to 1.04µB (Fig. 1(g)) providing that it scales between two end case values of 2.15µB
and 0µB. The magnetization is found to depend strongly on GNM hole size as seen in Fig. 1 and 2. Such
behavior can be explained in the framework of Lieb’s theorem with a few cases, however, going beyond
the latter (Fig. 2(a)). Of note, magnetic configurations get more stable compared to non-magnetic ones as
the hole sizes increases as seen in Fig. 2(b). Finally, one of the most interesting results is that the exchange
58
splitting increases as a function of ∆AB and reaches the values of the order of half eV (Fig. 2(a)) which is
very promising for room temperature spintronics [7].

The second part of the presentation will be devoted to possibility of inducing spin polarization in graphene
by means of magnetic insulator proximity effect. Using the optimized structure of graphene on EuO, we
calculated the local density of states for this system. We found that due to very strong spin polarization of
EuO substrate, magnetic properties of graphene are strongly affected. The average spin polarization in
graphene layer is found to be about 12%. We will also discuss an impact of magnetic insulator proximity on
Dirac point properties.

This work was supported by Chair of Excellence Program of the Nanosciences Foundation in Grenoble,
France, by French National Research Agency (ANR) Project NANOSIM_GRAPHENE, and by European Union
funded STREP Project CONCEPT-GRAPHENE.

References

[1] A. K. Geim and K. S. Novoselov, Nature Materials, 6 (2007) 183

[2] A. Fert et al, Mat. Sci. Eng. B, 84 (2001) 1; S. A. Wolf et al, Science, 294 (2001) 1488.
[3] A. Varykhalov et al, Phys. Rev. Lett., 101 (2008) 157601; O. Rader et al, Phys. Rev. Lett., 102 (2009) 057602.
[4] Chi Vo-Van et al, New J. Phys. 12, 103040 (2010)
[5] H. Haugen et al, Phys. Rev. B, 77 (2008) 115406.
[6] J. A. Furst et al, Phys. Rev. B, 80, 115117 (2009)
[7] H. X. Yang et al, Phys. Rev. B 84, 214404 (2011)
[8] Y.-W. Son et al, Nature, 444 (2006) 347; O. Yazyev et al, Phys. Rev. Lett., 100 (2008) 047209.
[9] G. Kresse and J. Hafner, Phys. Rev. B, 47 (1993) 558; P. E. Blöchl, Phys. Rev. B 50 (1994) 17953; G. Kresse and J.
Joubert, ibid. 59 (1999) 1758.

Figures

ABSTRACTS

Figure 1: (a)-(h) H-passivated GNMs with different
shapes. The corresponding net magnetic moments for
each structure are also indicated.
Figure 2: (a) Total magnetic moment (μB /cell) (left) and
spin-splitting (right) as a function of ∆AB for various
GNM geometries. The result of the Lieb’s theorem
prediction is also given for comparison. (b) Energy
difference between ferrimagnetic and paramagnetic
states.
59
 Graphene synthesized by
Atmospheric Pressure Chemical Vapour Deposition

J.-F. Colomer and A.V. Tyurnina

Research Center in Physics of Matter and Radiation (PMR), University of Namur (FUNDP),
61 rue de Bruxelles, B5000 Namur, Belgium
jean-francois.colomer@fundp.ac.be

Our investigation is concentrated on the growth of graphene by atmospheric pressure chemical vapour
deposition (APCVD) technique. This method is technologically more attractive for large scale production of
graphene because it is inexpensive and readily accessible way for the growth of reasonably high quality
graphene on the different metal substrates [1-3]. Most of the CVD growth methods use polycrystalline Ni
or Cu films/foils, but Cu seems to be the best candidate for making large-area graphene films. Because of a
low solubility of carbon in Cu (in comparison with Ni), the growth is restrained to the surface of the
catalyst, thus allows the formation of single layer graphene (SLG) [3]. Under atmospheric pressure,
methane and hydrogen gas mixtures at various ratios are used in the CVD process with a temperature
ranged between 800-1000°C [3-4]. Mainly all of successful results were obtained for graphene deposited
onto the Cu foils [5-6]. Another promising approach is to use metal films heteroepitaxially deposited on
conventional single crystalline substrates as reported for the Co and Ni [7-8]. Using epitaxial Cu(111)
deposited on c-plane sapphire, high quality SLG can be synthesized [9-10].

The proposed route of making graphene is based on the combination of plasma vapour deposition (PVD)
and APCVD synthesis. The PVD technique is used to tailor the catalysts in order to allow the formation of
uniform Cu films with required properties for graphene film grown on it. The APCVD technique implies the
controlled synthesis of such film with fixed number of graphene layers. The effect of different parameters
during the preparation of catalysts or/and the synthesis of graphene investigated using optical and
electron microscopies (SEM and TEM), AFM, X-ray photoelectron spectroscopy (XPS) and Raman
spectroscopy characterizations.

Our studies are focused on adjusting APCVD for graphene growth on Cu catalysts. First of all sputtering
route of catalyst preparation allows us to control the size and the shape of graphene films deposited on it.
Additionally, this method allows the flexibility of transferring as-produced film to alternative substrates by
wet-etching of the Cu catalysts. Based on our experience acquired in the past on the APCVD growth of
carbon nanotubes, we tried to adjust CVD parameters for graphene formation. But actually, a key
challenge for as-synthesized graphene concludes not only in finding the CVD conditions but also in
tailoring the catalyst deposition. For the synthesis of graphene, catalyst deposition must be tuned to
formation of uniform SLG film which should save continuity, flatness and homogeneity even after high
temperature CVD process. To reach so, the best catalysts could be heteroepitaxial metal films.
ABSTRACTS
60
References

[1] Reina A. et al, Nano Lett. 9 (2009) 30.

[2] Kim, K. S. et al, Nature 457 (2009) 457, 706.
[3] Li, X., et al, Nano Lett. 9 (2009) 4268.
[4] Lee, Y., et al, Nano Lett. 10 (2010) 490.
[5] Yu, Q., et al, Nat. Mater. 10 (2011) 443.
[6] Vlassiouk, I., et al, ASC NANO 5 (2011) 6069.
[7] A. Ago et al, ACS NANO 4 (2010) 7407.
[8] T. Iwasaki et al, Nano Lett. 11 (2011) 79.
[9] K. M. Reddy et al, 98 (2011) 113117.
[10] B. Hu et al, 50 (2012) 57.

Figures

Figure 1: AFM image and Roughness, XRD pattern and hexagonal LEED pattern of epitaxial Cu(111) on sapphire.

ABSTRACTS

Figure 2: Optical images of etching solution with graphene film supported by PMMA in it, transferred film onto the Si/SiO2
and Raman spectrum of as-transferred graphene.
61
 Charge writing on graphene devices
using low temperature scanning probe microscopy

1 1,2 1 3 4 4
E. D. Herbschleb , M. R. Connolly , R. K. Puddy , M. Roy , D. Logoteta , P. Marconcini ,
1 1 4 3 1
J. Griffiths , G. A. C. Jones , M. Macucci , P. Maksym , C. G. Smith
1
Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE, UK
2
National Physical Laboratory, Hampton Road, Teddington TW11 0LW, UK
3
Department of Physics and Astronomy, University of Leicester, University Road, Leicester, LE1 7RH, UK
4
Dipartimento di Ingegneria dell'Informazione, Universitá di Pisa, Via G. Caruso 16, I-56122 Pisa, Italy

mrc61@cam.ac.uk

Electrostatic Erasable Lithography [1] (EEL) is a technique which uses the tip of an atomic force microscope
to deposit charge above a two-dimensional electron system in order to define a quantum circuit.
Graphene is an ideal platform for performing EEL owing to the exposure of its basal plane to charges in the
environment. We recently demonstrated how EEL can be used to measure and modify the doping around
metallic contacts in a graphene flake covered with a thin dielectric layer at room temperature [2,3]. Here
we describe a technique that enables charge deposition to work at low temperature (4.2 K), thereby
paving the way towards drawing circuits where quantum effects such as phase coherence begin to play a
role.

In contrast to charge writing at room temperature, we find that low temperature EEL requires the tip to be
brought into direct contact with the dielectric, where charge can be written according to the tribocharging
technique [4] (Figure 1). Subsequent imaging of the potential of the written charge using Kelvin probe
microscopy [5] (KPM) enables us to extract the amplitude of the local surface potential, which can be over
10 V (Figure 1, insets). A systematic change in the bulk conductance of the contacted flake as a function of
back-gate voltage (Figure 1, main) confirms that the deposited charge is strongly coupled to the underlying
graphene. As a first step towards drawing quantum circuits in graphene, we fabricate a constriction
comprising a positively charged dot in a negatively charged 400 nm-wide line. Scanning gate microscopy
images [2] show a local response to the scanning tip at the locations where charge was written. Finally, we
show how the charge may be erased by running a high current through the flake, thus enabling multiple
quantum circuits to be designed and measured by EEL at low temperature.

References

[1] R. Crook, A.C. Graham, C.G. Smith, I. Farrer, H.E. Beere, and D.A. Ritchie, Nature 424 (2003), 751.
[2] M.R. Connolly, K.L. Chiou, C.G. Smith, D. Anderson, G.A.C. Jones, A. Lombardo, A. Fasoli, and A.C. Ferrari, Appl. Phys.
Lett. 96 (2010), 113501.
[3] M.R. Connolly, E.D. Herbschleb, R.K. Puddy, M. Roy, D. Anderson, G.A.C. Jones, P. Maksym, C.G. Smith,
arXiv:1111.0560v1 (2011).
ABSTRACTS

[4] A. Kleiner, O. Marti, U. Dürig, A. Knoll, B. Gotsmann, Journal of Applied Physics, 109 (2011), 124312.
[5] M. Nonnenmacher, M.P. O'Boyle, and H.K. Wickramasinghe, Appl. Phys. Lett. 58 (1991), 2921.
62
Figures

Figure 1: [Top] Depiction of the scanning probe writing charge in a thin dielectric layer covering a contacted graphene
flake. [Main] Conductance of the graphene device as a function of back-gate voltage after writing consecutively larger
amounts of negative charge in a square region over the graphene. We quantify the amount of deposited charge by the
average surface potential (VS), which is measured using Kelvin probe microscopy. Insets show maps of the surface
potential obtained by Kelvin probe microscopy at VS = -0.5 V (left) and VS = -11.5 V (right). The position of the device is
indicated by the overlaid lines.

ABSTRACTS
63
 Epitaxial graphene/metal hybrids

Johann Coraux
Institut Néel – CNRS, France

A number of transition metals may serve a supports and catalysts for the growth of epitaxial graphene. In
the last few years synthesis routes which were historically parallel are converging: on one hand,
preparation under ultra-clean conditions, namely under ultra-high vacuum and at the surface of single
crystal metals; on the other hand, growth under pressures approaching atmospheric conditions, at the
surface of metallic thin films. In both cases graphene layers having high quality can be obtained. The first
approach delivers model systems especially suited to fine surface science studies. The second approach is
motivated by the prospect for mass production of graphene.

I will present our recent studies on a particular graphene/metal system which is a case study for graphene
weakly interacting on its substrate, graphene/Ir(111), which we have been revisiting since 2007 and allows
for the preparation of ultra-high quality graphene [1-5]. I will show that even in such a high quality system,
small small imperfections, causing distributions of the lattice parameter in graphene of a few hundredths
of an ångström, are present [6]. I will then present our recent studies devoted to the deposit of metals on
graphene/Ir(111), which leads to ordered two-dimensional arrays of magnetic nanoclusters [7] or ultra-
thin magnetic films intercalated between graphene and its metallic substrate [8].

References

[1] J. Coraux et al. Nano Lett. 8, 565 (2008).

[2] J. Coraux et al., New J. Phys., 11, 023006 (2009).
[3] R. van Gastel et al., Appl. Phys. Lett. 95, 121901 (2009).
[4] H. Hattab et al., Appl. Phys. Lett. 98, 141903 (2011).
[5] C. Vo-Van, et al., Appl. Phys. Lett. 98, 181903 (2011).
[6] N. Blanc, et al., submitted.
[7] A. T. N'Diaye et al., New J. Phys. 11, 103045 (2009). C. Vo-Van et al., Appl. Phys. Lett. 99, 142504 (2011).
[8] J. Coraux, et al., submitted.

Figures

Figure 1: A. Domains with varying local

structure (left) and a domain wall with strain
between two domains (right) (the hexagon's
shape represent the shape of the graphene
ABSTRACTS

unit cell). B. Co clusters on graphene/Ir(111),

which are intercalated between graphene and
Ir upon annealing.
64
Quenching of the quantum Hall effect in graphene
with scrolled edges

1 2 3 4 5
Alessandro Cresti , Michael M. Fogler , Francisco Guinea , A. H. Castro Neto and Stephan Roche
1
IMEP-LAHC (UMR 5130), Grenoble INP, Minatec, 3 Parvis Louis Néel, F-38016 Grenoble, France
2
Department of Physics, UC San Diego, 9500 Gilman Drive, La Jolla, California 92093, USA
3
Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, E-28049 Madrid, Spain
4
Graphene Research Centre, National University of Singapore, 2 Science Drive 3, 117542, Singapore
5
CIN2 (ICN-CSIC) and Universitat Autonoma de Barcelona, E-08193 Bellaterra, Spain
crestial@minatec.inpg.fr

Compared to graphene deposited on substrate, suspended samples show exceptionally high charge
mobility, which can even be orders of magnitude larger. Surprisingly enough, the integer quantum Hall
effect is easily observable in deposited graphene even at room temperature, while its experimental
demonstration for suspended samples has been difficult to achieve.
The typical mechanism that causes the deviation from the integer quantum Hall effect is the crosslinking
of the chiral channels due to strong disorder, as impurities [1] or elastic strains [2]. However, suspended
graphene has very low disorder and the absence of substrate preserves it from remote Coulomb
impurities. Moreover, the continuous progress of the experimental techniques has allowed the fabrication
of samples with size up to several microns, for which such sources of scattering can be generally ruled out.
Another factor that might play a role is that of hot spots [1] for samples in the four-terminal configuration,
where the unfortunate placement of the contacts affects the potential felt by the probes, thus reducing of
the Hall voltage. Again, the large size of the current samples makes this issue irrelevant in most cases. The
only other known mechanism of disrupting the quantum Hall effect is edge reconstruction, which can
generate counter-propagating channels at the same edge. However, previously discussed edge
reconstructions [3,4] are not unique to suspended graphene and originate from a generic tendency of a 2D
metal to have an irregular density near the edge.
In this contribution, we propose an alternative explanation for the difficult observation of the quantum
Hall effect in suspended graphene. Our analysis starts from the matter-of-fact that suspended graphene
often has scrolled edges, as commonly observed experimentally [5]. In general, scrolling is most common
in four-terminal devices as the graphene samples are suspended underneath the contacts and these
regions are loose and can easily scroll.
In the region of the scrolls, the component of the magnetic field perpendicular to the graphene surface
oscillates and changes its sign due the curvature. This translates into an effective almost vanishing
magnetic field nearby the edge regions, and it turns the scrolls into conventional non-chiral conductors,
where backscattering can be easily induced by a minimum amount of disorder. The current in these
regions flows in parallel with the current in the flat part of the sample, thus leading to the quenching of
the quantum Hall effect.
We support this scenario by simulating electronic structure and transport in large graphene nanoribbons
with scrolled edges under magnetic fields up to 20 T [6], fig.1. From the calculation of the energy bands,
fig.2, we clearly demonstrate the rise of non-chiral edge states, with the typical Dirac-like dispersion,
ABSTRACTS

which coexist with the usual Landau states in the bulk region. The simulations of electronic transport
based on the Green function formalism, figs.3 and 4, show the detrimental impact that disorder has on the
transmission of the non-chiral channels and, consequently, on the global conductance quantization. Note
that strain is not supposed to play any role, because either it is absent (scrolls form to release strain) or it
is so inhomogeneous that the effect of the generated pseudomagnetic fields vanishes.
65
 Our results provide a consistent and meaningful interpretation of the possible suppression of quantum
Hall regime in suspended graphene and rationalize its complicate observation.

References

[1] I. Skachko, X. Du, F. Duerr, A. Luican, D.A. Abanin et al., Phil. Trans. Roy. Soc. A, 368 (2010) 5403.
[2] E. Prada, P. San-Jose, G. Léon, M.M. Fogler, and F. Guinea, Phys. Rev. B, 81 (2010) 161402(R).
[3] A.H. Castro Neto, F. Guinea and N.M.R. Peres, Phys. Rev. B, 73 (2006) 205408.
[4] P.G. Silvestrov and K.B. Efetov, Phys. Rev. B, 77 (2008) 155436.
[5] J.C. Meyer, A.K. Geim, M.I. Katsnelson, K.S. Novoselov, T.J. Booth et al., Nature, 446 (2007) 60.
[6] A. Cresti, M.M. Fogler, F. Guinea, A.H. Castro Neto and S. Roche, arXiv:1111.4437v1.

Figures

Figure 2: Band structure of a scroll

Figure 1: Configuration of the
system under study in which a
suspended graphene ribbon has
scrolled edges. The ribbon is
attached to the source and drain
contacts. The arrows indicate the
external current.
with the inner and outer radii
ri=9.91 and ro=11.1 nm,
respectively, at B=20T computed
from the Dirac equation with the
zigzag edge boundary condition.
The dashed lines are defined by
equations E=~v(kx ± lB −2 ro), where
v is the velocity of electrons at the
charge neutrality point of 2D
graphene, lB is the magnetic length and kx is the component of the wave
vector along the scroll axis. The cross-section of the system is sketched in the
bottom right corner of the figure. For clarity, the flat region (full width 100
nm) is truncated and the layer separation inside the scroll is enlarged.

Figure 3: (a) Band structure of a flat 100 nm wide armchair nanoribbon under a perpendicular magnetic field B=20T. (b)
Conductance as a function of the electron energy for pristine and disordered ribbons. Disorder extends over a section of
length 210 nm and includes a short-range component generated by randomly varying the on-site energies within the
range [−25,25] meV, and a finite-range component given by 50 Gaussians impurities with range ξ=1 nm and strengths in
the range [−500,500] meV. Thanks to the chirality of the edge channels, the integer quantum Hall effect is robust against
disorder and the conductance quantization is observed. (c) Corresponding shot-noise, which indicates the perfect
transmission except around the van Hove singularities.
ABSTRACTS

Figure 4: (a) Band structure of a100 nm wide armchair nanoribbon under a perpendicular magnetic field B=20T in the
presence of nanoscrolls of arc length 15 nm and two full turns. (b) Conductance as a function of the electron energy for
pristine (black dashed lines) and disordered (blue solid lines).The quantization is clearly destroyed in the whole energy
spectrum, with the exception of the region of the first plateau, where non-chiral channels are absent. (c) Corresponding
shot-noise, which confirms the strong enhancement of backscattering.
66
Applications for Graphene films: market trends

J. de la Fuente
Graphenea, San Sebastian, Spain

During the past two years, advances in Graphene CVD synthesis and transfer have opened new research
and industrial applications to the landscape. Outstanding properties of Graphene films, homogeneity,
industrial-scalability and reproducibility are the main drivers for the development of new Graphene films
based devices.

Most applications to date have been focused in the Energy Storage applications mainly in batteries and
ultracapacitors. Using Graphene films to enhanced electrodes has yield in an exceptional performance
improvement for these devices. Graphene enhanced Solar cells are also an intensive research topic. The
other group of leading applications is related to Electronics and Semiconductors mainly in the High
Frequency Electronics applications. In some cases, proof of concepts and prototypes has been developed.
Transparent conductors, Biosensors and Advanced Composites complete the list of leading innovations
using Graphene films.

In order to evolve to the next step to develop early stage technology products some key success factors
have to be considered. The key success factors to move forward in the development of the Graphene films
industry will be presented and discussed.

ABSTRACTS
67
 Flexible GHz Transistors Derived
from Solution-Based Single-Layer Graphene

1 1 2 3 3
Cédric Sire , Florence Ardiaca , Sylvie Lepilliet , Jung-Woo T. Seo , Mark C. Hersam ,
2 2 1
Gilles Dambrine , Henri Happy and Vincent Derycke
1
CEA Saclay, IRAMIS, Service de Physique de l’Etat Condensé, Laboratoire d’Electronique Moléculaire,
F-91191 Gif sur Yvette, France
2
Institut d’Electronique, de Microélectronique et de Nanotechnologie, UMR-CNRS 8520, BP 60069, Avenue Poincaré,
F-59652 Villeneuve d’Ascq, France
3
Department of Materials Science and Engineering and Department of Chemistry, Northwestern University,
Evanston 60208-3108, Illinois, USA
vincent.derycke@cea.fr

The potential of graphene transistors for high frequency electronics was recently demonstrated by several
groups using exfoliated, SiC-based and CVD-based graphene. The most recent studies reached de-
embedded current gain cut-off frequencies (fT) in the 100-300 GHz range with room for improvement at
both the material and device levels. In parallel, graphene is being explored for large scale electronics on
flexible substrates via CVD growth on metal foils associated with transfer methods. This progress is driven
by the perspective of replacing ITO as the material of choice for the transparent electrodes required in
applications such as touch screens, flat panel displays or organic photovoltaic cells. However, the
combination of these two properties, namely high speed and flexibility, remains an open challenge. In
particular for the viable development of fast and flexible electronic applications in the areas of portable /
wearable communicating devices with low power consumption, this combination should be achieved with
a source of material adapted to low-cost manufacturing methods such as ink-jet printing.

Printed electronics based on organic materials is a well established field. Organic materials are particularly
well suited for flexible circuits due to their mechanical resiliency. Yet, their low charge mobility limits their
ultimate operating frequency. While several examples of organic devices and circuits operating in the kHz
to MHz range have been demonstrated, these approaches fall well short of the GHz range. Conversely,
inorganic semiconducting materials such as III-V semiconductor nanowires and silicon thin films can reach
the GHz range, but few studies have evaluated their performances upon severe bending and these
inorganic materials are not ideally adapted for future printed technologies. Carbon-based nanomaterials
potentially combine high speed performance with the required mechanical properties. In particular,
carbon nanotubes were used to develop high frequency transistors on rigid substrates and to demonstrate
flexible devices and circuits. Recently, graphene transistors on flexible substrates were realized, but their
high frequency performance was not evaluated.

In this work [1], we demonstrate that solution-based single-layer graphene ideally combines the required
properties and presents important advantages over alternative graphene sources that are chemically
grown or mechanically exfoliated. Several methods of producing stable graphene-based suspensions have
been recently demonstrated. In particular, there have been extensive efforts to utilize graphene oxide as a
ABSTRACTS

solution-phase precursor for graphene. However, this approach requires subsequent chemical reduction
treatments that preclude complete recovery of the superior electrical properties of pristine graphene.
Alternatively, exfoliation of graphite is also possible. While this procedure is effective at isolating few-layer
pristine graphene, polydispersity in the thickness of graphene produced from these processes implies
inferior performance compared to single-layer graphene in high-performance electronic applications. To
overcome these issues, we employ solution-based, predominantly single-layer graphene flakes isolated via
68
density gradient ultracentrifugation [2] to fabricate flexible transistors on organic substrates operating at
GHz frequencies. The devices operate at low bias (VDS<0.7 V), achieve current gain cut-off frequencies fT as
high as 2.2 GHz before de-embedding (8.7 GHz after de-embedding), power gain cut-off frequency fMAX of
550 MHz and have a constant transconductance in the GHz range [1]. In addition, we show that both the
electron and hole conduction branches display high-speed performance, in contrast with previous reports
where only one type of carrier was considered due to the either high n-type or p-type doping of the
graphene used. RF measurements directly performed on bent samples show the remarkable mechanical
stability of these devices and demonstrate the advantages of solution-based graphene FETs over other
types of flexible transistors based on organic materials.

References

[1] C. Sire, F. Ardiaca, S. Lepilliet, J-W. T. Seo, M.C. Hersam, G. Dambrine, H. Happy, V. Derycke, Nano Lett. (2012) in
press (DOI: 10.1021/nl203316r).
[2] Green, A. A.; Hersam, M. C. Nano Lett. 9 (2009) 4031-4036.

Figures

Figure 1: (a) Evolution of the current gain H21 measured at 510 MHz as a function of the gate bias of an as-prepared
graphene-FET on polyimide. (b) Evolution of the transconductance as a function of frequency showing stable
performances up to ~5 GHz (VGS=-1V for holes and 1V for electrons). (c) Picture of a series of flexible graphene FETs on
polyimide. (d) Evolution of the current gain H21 (before and after de-embedding) and of the power gain U for a p-type
device after Joule annealing. The as-measured cut-off frequency fT is 2.2 GHz.
ABSTRACTS
69
 Photo-thermo- vs. photo-electric effects in
metal-graphene-metal photodetectors

1 1 2 3 1 1 1
T.J. Echtermeyer , P.S. Nene , M. Trushin , R.V. Gorbachev , A.L. Eiden , S. Milana , Z. Sun , J.
2 4 5 1
Schliemann , E. Lidorikis , K.S. Novoselov and A. C. Ferrari
1
Department of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
2
Institute for Theoretical Physics, University of Regensburg, D-93040 Regensburg, Germany
3
Centre for Mesoscience & Nanotechnology, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
4
Department of Materials Science and Engineering, University of Ioannina, Ioannina, Greece
5
School of Physics & Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
Tje29@cam.ac.uk

The electrical and optical properties of graphene make it an ideal material for photonics and
optoelectronics [1]. Graphene based photodetectors with a bandwidth up to 16 GHz have been
demonstrated and integrated into an optical communication link operating at 10 Gbit/s [2], proving their
suitability for high-speed photodetection over a wide wavelength range. However, the underlying physical
mechanism is still under debate as both photo-thermoelectric [3,4,5] and photoelectric effects [6,7,8] are
being suggested. We carry out wavelength and polarization dependent photovoltage mapping of metal-
graphene-metal junctions, demonstrating that both effects simultaneously contribute to the
photoresponse. These measurements allow us to quantify the wavelength dependent ratio of thermo- vs.
photoelectric effects from the visible to the near-infrared.

Fig. 1 shows the optical micrograph of a typical metal-graphene-metal photodetector. Gold contacts are
prepared to contact exfoliated single-layer graphene by means of e-beam lithography, metal evaporation
and a lift-off step. Subsequently, photovoltage-mapping is carried out by scanning linearly polarized laser
light with diffraction limited spot size over the sample and recording the position dependent
photoresponse of the device. By varying the incident laser light wavelength and polarization, information
about the contributing mechanisms to the overall photoresponse can be acquired. Fig. 2 shows the
photovoltage in dependence of the polarization angle Φ with respect to the metal contact long edge (0
deg denoting perpendicular to the edge). It can be observed that the photovoltage follows a cos2(Φ)
dependence. This behavior can be explained by considering the pseudospin selection rule for anisotropic
generation of electron-hole pairs in the driving term of the Boltzmann equation which is a clear proof for a
photo-electric effect in graphene-based photodetectors. Further, the ratio of the oscillating vs. non-
oscillating part of the photovoltage allows an estimation of the ratio of photo-thermalvs photo-electric
effects.

References

[1] F. Bonaccorso, Z. Sun, T. Hasan, A.C. Ferrari, Nat. Photonics 4, 611 (2010).
[2] T. Mueller, F. Xia, P. Avouris, Nat. Photonics 4, 297 (2010).
ABSTRACTS

[3] X. D. Xu et. al. , Nano. Lett. 10, 562 (2010).

[4] M.C. Lemme et. al. , Nano Lett. 11, 4134 (2011).
[5] N.M. Gabor et. al. , Science 4, 648 (2011).
[6] E. J. H. Lee et. al. , Nat. Nanotechnol. 3, 486 (2008).
[7] T. Mueller, F. Xia, M. Freitag, J. Tsang, Ph. Avouris, Phys. Rev. B 79, 245430 (2009).
[8] S. Mai, S. V. Syzranov, K. B. Efetov, Phys. Rev. B 83, 033402 (2011).
70
Figures

Figure 1: Optical micrograph of a metal-graphene-metal photodetector.

Figure 2: Normalized photovoltage in dependence of the incident laser light polarization angle for different wavelengths.

ABSTRACTS
71
 Magnetic and electronic structures of nanographene and fluorinated
nanographene with an interplay of edge-state spins and dangling
bond spins

Toshiaki Enoki
Department of Chemistry, Tokyo Institute of Technology, W4-1/2-12-1,
Meguro-ku, Tokyo 152-8551 Japan
enoki.t.aa@m.titech.ac.jp

The magnetic structure of graphene is modified drastically by introducing edges and defects. Here, localized non-bonding
edge states of π-electron origin having localized spins are created when a graphene sheet is cut along the zigzag direction,
while defects, which are not terminated, have magnetic σ-dangling bond states. We investigated the magnetic and
electronic properties of nanographene with a focus of interplay between the edge-state spins and dangling bond spins,
using nanoporous activated carbon fibers (ACFs), which are a 3D disordered network of nanographene sheets, and their
fluorinated derivatives, by means of NEXAFS, ESR and magnetic susceptibility.

NEXAFS experiments indicate the presence of edge state (peak position 284.5 eV) around the Fermi level in
nanographene together with the π*-conduction band (peak position 285.5 eV). The large negative chemical shift (-1.0 eV)
of the NEXAFS peak from the peak of the π*-conduction band is suggested to be a consequence of large screening effect,
which is associated with a large local density of states of the edge state of nonbonding π–electron. ESR result proves that
the edge state is magnetic with localized spin. A nanographene sheet, whose periphery is described in terms of a
combination of zigzag edges and armchair edges, is found to have ferrimagnetic structure with a net nonzero magnetic
moment as a result of cooperation of strong intra-zigzag-edge ferromagnetic interaction and intermediate strength inter-
zigzag-edge ferromagnetic/antiferromagnetic interaction. Heat-treatment of the ACFs induces an insulator-to-metal (IM)
transition around 1200 ˚C. This strengthens inter-nanographene exchange interaction in the 3D nanographene network,
bringing about a spin glass state in the vicinity of the IM transition.

Fluorination of ACFs proceeds in two step manner; fluorination of the edge carbon atoms first and then that of the carbon
atoms in the interior [Figure 1]. The first step taking place up to F/C~0.4 works to decrease the magnetic edge-state
contribution due to the local destruction of the zigzag edges as evidenced by a monotonical decrease in the spin
concentration, while magnetic σ-dangling bond states are created at the carbon site adjacent to the carbon atom
attacked by a fluorine atom in the interior of a nanographene sheet in the second step that takes place above F/C~0.4
after all the edge carbon atoms are terminated with fluorine atoms. The spin concentration of the dangling bonds starts
increasing above F/C~0.4, it is maximized when a half of the interior carbon atoms (F/C~0.8) are bonded with fluorine
atoms and finally it becomes negligible at a saturated fluorine concentration of F/C~1.2. This scenario of the fluorination
process, which is suggested by the magnetic measurement, is confirmed by the NEXAFS. NEXAFS shows an extra peak
assigned to the dangling bonds in the fluorinated ACFs at 284.9 eV above F/C~0.4. The small negative shift of -.0.6 eV of
the peak is a consequence of weak screening effect of the σ-dangling bond states having a small local density of states.
The NEXAFS intensity of the σ-dangling bond states tracks the behavior of the concentration of the σ-dangling bond spins
with fidelity. A combination of magnetic susceptibility, ESR and NEXAFS experiments demonstrates that the edge-state
spins have itinerant nature with a fractional magnetic moment whereas the dangling bond spins are localized in nature
with a magnetic moment of 1 μB and are free from exchange interaction.

References
ABSTRACTS

[1] M. Kiguchi, V. L. J. Joly, K. Takai, T. Enoki, R. Sumii, K. Amemiya, Phys. Rev. B84 (2011) 045421.
[2] T. Enoki, Proc. Nobel Symposium on Graphene and Quantum Matter, Physica Scripta T, 146, 014008 (2012).
72
Figures

Figure 1: Schematic model of the fluorinated ACFs at (a) F/C<0.4 and (b) F/C=0.4~0.8. The edge carbon atoms bonded to
two neighboring carbon atoms are terminated by two fluorine atoms (large circles). A -dangling bond (ellipsoids with a
dot inside) is created at a carbon site bonded to the carbon atom attacked by a fluorine atom in the interior of a
nanographene sheet. (c) The intensities of the π-edge state (squares), π-dangling bond state (circles), and π* state
(triangles) peaks as a function of fluorine concentration, obtained NEXAFS experiments. (d) The total localized spin
concentration (squares) as a function of fluorine concentration. The expected total density of magnetic moments in the F-
ACF (stars) obtained by multivariable analysis of the NEXAFS spectra with the contributions of the edge state and σ-
dangling bond state.

ABSTRACTS
73
 The Graphene Science and
Technology Roadmap

1 2
Vladimir Falko , Andrea C. Ferrari , Francesco Bonaccorso, Kostya S. Novoselov
1
School of Physics and Chemistry Lancaster University LA1 4YB, Lancaster, UK
2
Engineering Department, University of Cambridge, 9, JJ Thomson Avenue, Cambridge, CB3 0FA, UK

We will present the “The Graphene Science and Technology Roadmap” produced by the Graphene
Flagship pilot action in conjunction with the national communities of the EU member states. We will
outline the way this roadmap was conceived, its main objectives, together with its most salient features in
terms of research and applications. This will include a brief overview of grand challenges in topics such as
high frequency electronics, flexible displays, photonics, optoelectronics and plasmonics, as well as
composites, inks, production and up-scaling.
ABSTRACTS
74
Dynamic RKKY interaction in grapheme

M. S. Ferreira
School of Physics, Trinity College Dublin, Dublin 2, Ireland

The growing interest in carbon-based spintronics has stimulated a number of recent theoretical studies on
the RKKY interaction in graphene, based on which the energetically favourable alignment between
magnetic moments embedded in this material can be calculated. The general consensus is that the
strength of the RKKY interaction in graphene decays as 1/D3 or faster, where D is the separation between
magnetic moments. Such an unusually fast decay for a 2-dimensional system suggests that the RKKY
interaction may be too short ranged to be experimentally observed in graphene. Here we show in a
mathematically transparent form that a far more long ranged interaction arises when the magnetic
moments are taken out of their equilibrium positions and set in motion. We not only show that this
dynamic version of the RKKY interaction in graphene decays far more slowly but also propose how it can
be observed with currently available experimental methods.

ABSTRACTS
75
 Graphene and spintronics

1 1 2,3 2 1 1 4 1
A. Fert , A. Anane , C. Berger , W. de Heer , C. Deranlot , B. Dlubak , L. Hueso , H. Jaffrès ,
1 5 1 1 2 6 6 1
M-B. Martin , N. Mathur , F. Petroff , P. Seneor , M. Sprinkle , B. Servet , S. Xavier , H. Yang .
1
Unité Mixte de Physique CNRS/Thales, Palaiseau and Université Paris-Sud, Orsay, France
2
School of Physics, Georgia Institute of Technology, Atlanta, USA
3
Institut Néel, CNRS, Grenoble, France
4
CIC Nanogune, San Sebastian, Spain
5
Department of Materials Science, University of Cambridge, Cambridge, UK
6
Thales Research and Technology, Palaiseau, France
albert.fert@thalesgroup.com

Several spintronic devices (logic gates, spin FET, etc) are based on spin transport in a lateral channel
between spin polarized contacts. We will present, with experiments in support, an overall picture of the
properties of carbon nanotubes and graphene for the transport of spin currents to long distance in such
types of device. Their advantage over classical semiconductors and metals comes from the combination of
their large electron velocity with their long spin life time due to the small spin-orbit coupling of carbon.
This leads to spin diffusion lengths ≈ 100 μm.
For graphene, the experiments we present are magneto-transport measurements on graphene multilayers
on SiC [1] connected to cobalt electrodes through alumina tunnel barriers. In terms of ΔR =ΔV/I, the spin
signals, at low and room temperature, are in the MΩ range, well above the spin resistance of the graphene
channel. The analysis of the results in the frame of drift/diffusion equations [2] leads to spin diffusion
length in graphene around 100 mm for a series of samples having different lengths and different tunnel
resistances . The advantage of the graphene is not only the long spin diffusion length. The large electron
velocity also leads to short enough dwell times even for spin injection though tunnel barriers.
Our results on graphene can be compared with previous results [3] obtained by some of the authors (L.H.,
N.M., A. F.) on carbon nanotubes with also spin signals ΔR in the MΩ range (ΔR/R up to 72%) and spin
diffusion lengths around 50 μm. A unified picture of spin transport in nanotubes and graphene will be
presented.
In conclusion, carbon-based conductors like carbon nanotubes and graphene, with their combination of a
long spin life time with a large electron velocity and the resulting long spin diffusion length, turns out as
materials of choice for large scale logic circuits and the transport/processing of spin information.
Understanding the mechanism of the spin relaxation, improving the spin diffusion length and also testing
various concepts of spin gate are the next challenges.

References

[1] W.A. de Heer, C. Berger, X. Wu, M. Sprinkle, Y. Hu, M. Ruan, J.A. Stroscio, P.N. First, R. Haddon, B. Piot, C. Faugeras,
M. Potemski, and J.-S. Moon, Journal of Physics D: Applied Physics, 43, 374007, 2010.
ABSTRACTS

[2] H. Jaffrès, J.-M. George, and A. Fert, Physical Review B, 82, 140408(R), 2010.
[3] L.E. Hueso, J.M. Pruneda, V. Ferrari, G. Burnell, J.P. Valdes-Herrera, B.D. Simons, P.B. Littlewood, E. Artacho, A. Fert,
and N.D. Mathur, Nature, 445, 410, 2007.
76
Performance assessment of graphene-based
devices through a multi-scale approach

G. Fiori, G. Iannaccone
Dipartimento Ingegneria dell’Informazione, Università di Pisa, Via Caruso 16, 56122, Pisa, Italy

gfiori@mercurio.iet.unipi.it

Evaluating the potential performance of graphene-based devices is an issue suitable to be addressed by

numerical simulations. In order to be predictive, such simulations have to deal with quantum effects
involved at the atomistic level. Due to the reduced geometry, implemented physical models have to go
beyond the effective mass approximation widely exploited in the past: the flexibility of atomistic
approaches is indeed required to explore issues at this dimensional scale.
In this work, we will shed a light on the ultimate performance to be expected from devices at the end of
the ITRS roadmap, in which graphene is exploited as channel material. To this purpose, we will present our
method of choice for the simulation of graphene devices, i.e. a multi-scale approach, based on an
atomistic investigation of the material properties through ab-initio simulations, which will feed tight-
binding simulations, thus allowing to provide accurate results, but with reduced computational
requirements with respect to Density Functional Theory simulations.
In order to get a clear understanding of the physical behaviour of realistic devices, transport equations
have to be solved self-consistently with the Poisson equation. A versatile tool for this task is NanoTCAD
ViDES [1], the first software package for the simulation of graphene devices released under an open-
source license, capable to self-consistently solve the 2D and 3D Poisson equation together with the
Schroedinger equation with open boundary conditions, within the Non-Equilibrium Green’s Function
(NEGF) formalism [2].
By exploiting the code we can investigate the performance on a wide set of devices, ranging from 1D
dimensional transistors (based on nanotubes [3], graphene nanoribbons [4], one-dimensional
heterojunctions [5]) to 2D dimensional transistors (based on monolayer and bilayer graphene [6-8], and on
heterojunctions between graphene and other two-dimensional materials [9]).
In particular, attention will be focused on the evaluation of the main figures of merit for digital
applications, such as the largest achievable current in the on state (Ion) as well as the smallest current
when the device is switched off (Ioff), and the ratio (Ion/Ioff). For applications in analog electronics, we
will focus on voltage gain and on cut-off frequency as a function of different device structures.

References

[1] url: http://www.nanohub.org.tools/vides. DOI:10254/nanohub-r5116.5. (DOI: 10254/nanohub-r5116.5).

[2] S. Datta, Superlattice and Microstructures, Vol. 5, 523, 2000.
ABSTRACTS

[3] G. Fiori, G. Iannaccone, G. Klimeck, IEEE Transaction on Electron Devices, Vol. 53, pp. 1782-1788, 2006.
[4] G. Fiori, G. Iannaccone,
IEEE, Electron Device Letters, Vol. 28, Issue 8, pp. 760 - 762, 2007.
[5] L. Leem, A. Srivastava, S. Li, B. Magyari-Kope, G. Iannaccone, J. S. Harris, G. Fiori, IEDM 2010, p. 740.
[6] G. Fiori, G. Iannaccone, IEEE Electron Device Letters, Vol. 30, pp.1096-1098, 2009.
[7] G. Fiori, G. Iannaccone, IEEE Electron Device Letters, Vol. 30, pp. 261-264, 2009.
[8] B. N. Szafranek, G. Fiori, D. Schall, D. Neumaier, H. Kurz, Nano Letters, to be published ASAP.
[9] G. Fiori, A. Betti, S. Bruzzone, G. Iannaccone, ACS Nano, to be published ASAP.
77
 Figures

Figure 1: Graphene nanoribbon FET device

Figure2: Tunnel FET bilayer graphene FET.

ABSTRACTS
78
Tuning the transport properties of graphene
through AC fields

1 2 1 1 3,4
Luis E. F. Foa Torres , H. L. Calvo , L. H. Ingaramo , H. M. Pastawski , S. Roche
1
Instituto de Física Enrique Gaviola (IFEG)–CONICET, FaMAF, Universidad Nacional de Córdoba; Instituto de Física Enrique
Gaviola (IFEG)–CONICET, FaMAF, Universidad Nacional de Córdoba
2
Institut für Theorie der Statistischen Physik, RWTH Aachen University, D-52056 Aachen, Germany
3
CIN2 (ICN–CSIC), Catalan Institute of Nanotechnology, Universidad Autónoma de Barcelona, Campus UAB, 08193
Bellaterra (Barcelona), Spain
4
Institució Catalana de Recerca i Estudis Avançats (ICREA), 08070 Barcelona, Spain
lfoa@famaf.unc.edu.ar

More than a century ago, the use of alternating currents (ac) sparked a revolution that changed our
modern world. Today, the use of ac fields has reached the nanoscale. Here, the interplay between the
quantum coherence of the electrons, inelastic effects and dynamical symmetry breaking offers fascinating
opportunities for basic research and applications. The interest on time-dependent excitations by
electromagnetic fields or gate voltages has been steadily growing [1] and many captivating phenomena
such as photon-assisted tunneling, coherent destruction of tunneling [2] and quantum charge pumping [3]
have been unveiled.
Graphene and carbon nanotubes offer an outstanding ground for these studies [4,5,6]. Here we give a
brief overview of our recent research on driven electronic transport in these materials with a twofold
focus: the effects of radiation on electronic transport properties in graphene [6], notably the emergence of
dynamical band gaps, and how defects in carbon-based devices could help to generate a dc current in the
presence of ac fields [7]. More specifically, we will try to shed light on questions such as: Is it possible to
use ac fields to control the electric response (current and noise)? Could we achieve tunable band gaps in
graphene through illumination with a laser of suitable wavelength and polarization (see Fig. 1 and its
caption)? What is the role of defects in quantum pumping through carbon-based devices?
A brief overview of other facets of the wealth of phenomena that could be awaiting us, such as the
possibility of using the laser fields to generate the so called Floquet Topological Insulators [8,9,10], will
also be presented.

References

[1] S. Kohler, J. Lehmann, and P. Hänggi, Phys. Rep. 406 (2005) 379 .
[2] F. Grossmann, T. Dittrich, P. Jung, and P. Hänggi, Phys. Rev. Lett. 67 (1991) 516.
[3] M. D. Blumenthal et al., Nature Physics 3 (2007) 343; B. Kaestner et al., Phys. Rev. B 77 (2008) 153301; B. Kaestner et
al., Appl. Phys. Lett. 94 (2009) 012106; F. Giazotto et al. Nature Physics 7 (2011) 857.
[4] L. E. F. Foa Torres, G. Cuniberti, Appl. Phys. Lett. 94 (2009) 222103; C. G. Rocha, L. E. F. Foa Torres and G. Cuniberti
Phys. Rev. B 81 (2010) 115435.
[5] L. E. F. Foa Torres, H. L. Calvo, C. G. Rocha, G. Cuniberti, Appl. Phys. Lett. 99 (2011) 092102.
[6] H. L. Calvo, H. M. Pastawski, S. Roche, and L. E. F. Foa Torres, Appl. Phys. Lett. 98 (2011) 232103.
ABSTRACTS

[7] L. Ingaramo and L. E. F. Foa Torres, to be published.

[8] N. H. Lindner, G. Refael, and V. Galitski, Nature Physics, 7, 490 (2011); T. Kitagawa, E. Berg, M. Rudner, and E.
Demler, Phys. Rev. B 82 (2010) 235114.
[9] T. Kitagawa, T. Oka, A. Brataas, L. Fu, and E. Demler, Phys. Rev. B 84 (2011) 235108.
[10] Z. Gu, H. A. Fertig, D. P. Arovas, and A. Auerbach, Phys. Rev. Lett. 107 (2011) 216601; B. Dóra, J. Cayssol, F. Simon,
and R. Moessner, Phys. Rev. Lett. 108 (2012) 056602.
79
 Figures

Figure 1: (Left) Scheme of the proposed setup where a laser field is applied perpendicular to a graphene monolayer.
(Right) Effective density of states (DOS) as a function of the incident electron energy for three different laser
polarizations: linear (a), elliptic (b) and circular (c). The DOS for unirradiated graphene (gray line) suffers dramatic
modifications when the laser beam with ħΩ=140meV is turned on (the solid black and red dotted curves are for
intensities of 32 mW/mm2 and 130 mW/μm2 respectively). As a result of the interaction between the electrons and the
radiation, dynamical gaps open at ± ħΩ/2 and even at the Dirac point for circularly polarized light. These results are taken
from Ref. [6], where we showed the first atomistic simulations of the electrical response (dc conductance) of a large
graphene ribbon. Our results hint that a transport experiment carried out while illuminating with a laser in the mid-
infrared could unveil these phenomena.

A full list of related publications is available at http://nanocarbon.famaf.unc.edu.ar/

ABSTRACTS
80
Bloch-Zener oscillations as a probe of Dirac points merging
in artificial graphene

Jean-Noël Fuchs, Lih-King Lim and Gilles Montambaux

Laboratoire de Physique des Solides, Université Paris Sud, 91405 Orsay, France
jean-noel.fuchs@u-psud.fr

By varying band parameters, Dirac points can be manipulated and merged at a topological transition
towards a gapped phase. For example, Dirac points in graphene can be manipulated by applying stress to
the crystal. However the topological merging transition is unreachable as it would require unphysically
large deformations of the graphene sheet.

Recently, an experiment conducted in ETH Zürich realized a kind of “artificial graphene” by loading
ultracold fermions in a tunable brick-wall optical lattice [1]. Under a constant force, a Fermi sea initially in
the lower band can perform Bloch oscillations and may Zener tunnel to the upper band mostly at the
location of the Dirac points. Bloch oscillations and Landau-Zener tunneling were used in this experiment to
detect the presence/absence of Dirac points as a function of optical lattice parameters. A vanishing
tunneling probability was interpreted as a disappearance of Dirac points due to a merging transition.

We propose a simple anisotropic square tight-binding hamiltonian as a minimal model to describe such an
experiment [2]. At low energy it maps onto a so called universal hamiltonian [3] describing the vicinity of
the merging transition. We compute the corresponding tunneling probability and obtained a very good
agreement with the experiment. In addition, we study Stückelberg oscillations in such a system and show
how they could be observed in a strictly 2D gas. We also discuss the merging point, at which a semi-Dirac
spectrum (linear in one direction, quadratic in the other) is expected and should lead to new physics.

References

[1] L. Tarruell, D. Greif, T. Uehlinger, G. Jotzu and T. Esslinger, arXiv:1111.5020 (to appear in Nature 2012).
[2] L.-K. Lim, J.-N. Fuchs and G. Montambaux, arXiv:1201.1479 (to appear in Phys. Rev. Lett. 2012).
[3] G. Montambaux, F. Piéchon, J.-N. Fuchs and M.O. Goerbig, Phys. Rev. B 80, 153412 (2009) and Eur. Phys. J. B 72, 509
(2009).
ABSTRACTS
81
 Broadband Photodetection with
Graphene Devices

1,2 1,2 1,2 1,2 1,3

Michael S. Fuhrer , Jun Yan , Xinghan Cai , Myoung-Hwan Kim , Jennifer A. Elle , Andrei
1,2 1,2 1,3 1,2
B. Sushkov , Greg S. Jenkins , Howard M. Milchberg and H. Dennis Drew
1
Department of Physics
2
Center for Nanophysics and Advanced Materials
3
Institute for Research in Electronics and Applied Physics
University of Maryland, College Park, MD 20742-4111, USA
mfuhrer@umd.edu

Graphene’s unique massless, gapless bandstructure gives rise to strong, broadband interactions with light.
We report on two different broadband (THz to visible) photodetectors using graphene. The first
photodetector exploits the gate-tunable bandgap of bilayer graphene to produce a temperature-
dependent resistivity, allowing bolometric detection at temperatures of 5-20 K of visible (1.88 eV), near
infrared (1.2 eV), and mid-infrared (0.12 eV) radiation, and/or electrical joule heating[1]. The large heat
resistance between electrons and phonons in graphene due to the weak electron-acoustic phonon
interaction is directly measured. A near infrared (1.2eV) excitation pump-probe study verifies the intrinsic
electron-acoustic phonon energy relaxation time on order 1 ns which promises device operation to
gigahertz frequencies. Optimized graphene hot electron bolometers could compare favorably to
traditional silicon bolometers and superconducting transition edge detectors in noise equivalent power,
speed, and sensitivity. The second photodetector extends the known photovoltaic effect at graphene-
metal junctions to the THz regime by coupling an appropriate antenna structure to graphene through
dissimilar metal electrodes which allow rectification of the THz signal to produce a dc photocurrent[2].
Detection of 3 THz radiation at room temperature is demonstrated, and the possibility of plasmon-
enhanced detection will be discussed.

References

[1] J. Yan, M.-H. Kim, J.A. Elle, A.B. Sushkov, G.S. Jenkins, H.M. Milchberg, M.S. Fuhrer, and H.D. Drew, arXiv:1111.1202.
[2] X.H. Cai, A.B. Sushkov, G.S. Jenkins, M.S. Fuhrer, and H.D. Drew, in preparation.
ABSTRACTS
82
Graphene field effect transistors
for bioelectronic applications

Lucas Hess, Max Seifert, Markus Dankerl, Benno Blaschke, Eric Parzinger, Christoph Becker-
Freyseng, Martin Stutzmann, Jose A. Garrido
Walter Schottky Institut, Technische Universität München, Am Coulombwall 4, Garching, Germany
garrido@wsi.tum.de

The development of the future generation of neuroprosthetic devices will require the advancement of
novel solid-state sensors with a further improvement in the signal detection capability, a superior stability
in biological environments, and a more suitable compatibility with living tissue. Due to the maturity of Si
technology, Si-based MOSFETs have been extensively used in previous decades for these applications.
However, several disadvantages of Si technology, such as a relatively high electronic noise and poor
stability in aqueous environment have motivated the search for more suitable materials. In this respect,
the outstanding electronic and electrochemical performance of graphene holds great potential for
bioelectronic applications.

In this contribution, we will discuss our work towards the development of a graphene-based platform for
applications in bioelectronics. In particular, we will report on graphene solution-gated field effect
transistors (G-SGFETs) which can detect the electrical activity of electrogenic cells. Arrays of SGFETs were
fabricated using CVD-grown graphene, grown on Cu and transferred to insulating substrates. Typically, 4x4
transistor arrays with dimensions of the device’s active area of 20x10 µm2 were processed and
encapsulated for in-electrolyte characterization (Fig 1a). The electronic properties of these devices were
investigated by Hall effect experiments performed under electrolyte-gate controlled conditions. The
obtained mobility-carrier density curves (Fig 1b) are typical for high quality CVD graphene, with a carrier
mobility limited by surface polar phonon scattering introduced by the polar sapphire substrate. The carrier
mobility reaches values up to 104 cm2/Vs, in the low carrier density regime.

Graphene SGFETs (Fig 1c) are compared to state-of-the-art Si-SGFETs based on the sensitivity and low-
frequency noise performance of these devices [1]. The high carrier mobility in graphene, together with the
large interfacial capacitance at the graphene/electrolyte interface, leads to transconductive sensitivities
one order of magnitude higher than for Si devices [2]. Furthermore, G-SGFETs exhibit very low electronic
noise, with an RMS value that is equivalent to gate signals of less than 8 µV [3].

The biocompatibility of CVD graphene has been study using cultures of pure retinal ganglion cells (RGCs).
Our results confirm that graphene exhibit similar behavior than other biocompatible materials such as
glass. In addition, it will be shown how the growth of RGCs neurites can be directed by graphene
patterning. Further, we will report on the recording of the electrical activity of different cell lines using
arrays of graphene solution-gated field effect transistors (Fig 2a). Action potentials induced in dense
cultures of cardiomyocytes-like HL-1 cells are spatially and time-resolved by the graphene SGFETs (Fig 2b)
ABSTRACTS

[3]. The electrical coupling between a single cell and a graphene SGFET was studied by using HEK cells in a
patch-clamp configuration. Without the need of signal averaging, single recordings reveal not only the
electrical but also the chemical activity at the cell/transistor interface (Fig 2c). These results demonstrate
the potential of graphene to outperform state-of-the-art Si-based devices for biosensor and bioelectronic
applications.
83
 Finally, we will discuss how the facile integration of graphene with flexible substrates, together with the
excellent signal-to-noise ratio of graphene FETs and their sensitivity to the electrolyte composition hold
great potential in the field of electrically functional neural prostheses [4].

Acknowledgments
This work is partially supported by the German Research Foundation under the priority program
GRAPHENE, the Nanosystems Initiative Munich (NIM), and the EU under the FP7 program (project
NEUROCARE).

References

[1] Danker et al., Adv. Funct. Mater., 20 (2010) 3117

[2] Hess et al., Appl. Phys. Lett., 99 (2011) 033503
[3] Hess et al., Adv. Mater., 23 (2011) 5045
[4] Work in progress under the FP7-EU project NEUROCARE

Figures

Figure 1: a. Graphene transistor array on sapphire. b. Hall-effect carrier mobility versus carrier density for CVD grown
graphene structures measured using an electrolyte gate. c. Typical transistor curves measured in electrolyte with a
2
Ag/AgCl reference electrode. Transistor dimensions are 20x10 µm .
ABSTRACTS

Figure 2: a. Human embryonic kidney (HEK) cells cultured on a graphene transistor. b. Recordings of the transistor array in
a culture of cardiomyocyte-like cells, revealing the spontaneously elicited action potentials and noise levels below 30 µV.
c. HEK cell on a transistor gate region stimulated with a pipette electrode. The transistor recording (light blue=single
recording, dark blue=averaged signal) nicely follows the stimulation current signal (red curve).
84
Preparation routes to aqueous graphene dispersions and
their influence on electrical conductivity of polymer composites

1, 3 2, 3 1 2
Marcos Ghislandi , Evgeniy Tkalya , Alexander Alekseev , Cor Koning and
1
Gijsbertus de With
1
Laboratory of Materials and Interface Chemistry, Eindhoven University of Technology, 5600 MB Eindhoven, The
Netherlands
2
Laboratory of Polymer Chemistry, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
3
Dutch Polymer Institute DPI, PO Box 902, 5600 AX Eindhoven, The Netherlands
m.g.ghislandi@tue.nl

The chemical synthesis of graphene using graphite, graphite oxide (GO) or other graphite derivatives as
starting materials have been extensively studied. The conversion of graphite into GO via Hummers or
similar methods is an initial stage for different approaches. The water soluble GO can be reduced with the
use of chemicals1, or quickly thermally expanded2 to form graphene. Recently, the long-term (e.g. more
than 200 h) simple mechanical exfoliation (sonication) of graphite dispersed in polar solvents, as well as in
water/surfactant systems, were reported as methods that yield single and multilayer graphene platelets at
relatively high concentrations3. The chosen conversion techniques not only can be up-scaled but also can
provide graphene with improved processability and potentially new functionality. The exfoliated
dispersions are most suitable for the preparation of polymer composites with enhanced mechanical and
electrical properties. In this work, starting from graphite, we produced graphene dispersed in water
following the two main chemical conversion approaches (Oxi/Red Chemically and Oxi/Red Thermally) and
a physical conversion via ultrasonic exfoliation (Sonic Solution). Subsequently, graphene /polystyrene (PS)
composites were prepared using the well-known latex technology. The latex concept enables the
incorporation and proper dispersion of nanofillers into any kind of highly viscous polymer such as PS, e.g.
synthesized by emulsion polymerization or similar processes4. A comparison of the three chosen
techniques with respect to filler morphology and conductive properties of the respective nanocomposites
is presented.

Water/surfactant solutions were prepared with the nanofillers prepared via the three methods described
above and latex technology was applied for the preparation of conductive graphene/polystyrene
composites, with well-dispersed graphene platelets. Each dispersion was mixed with PS latex, frozen in
liquid nitrogen for several minutes, and subsequently freeze dried. The resulting composite powders were
heated up and then compression molded into films. The samples were characterized (Raman, UV-Vis,
AFM, SEM) with respect to filler properties and morphology, and their influences on electrical conductive
properties of the composites were compared.

AFM showed that the GO reduction techniques yield thin graphene platelets, and as a consequence
also induce wrinkling/agglomeration and possible size reduction of the platelets, especially for the
Oxi/red Thermally samples. Nevertheless, the thickness of the majority of the sheets measured is
between 1 and 3 nm, corresponding to a single or only a few layers of graphene. For the Sonic
ABSTRACTS

Solution graphene samples analyzed, the thickness measured was higher (5 to 25 nm) and the
average size was smaller, indicating multi-layer graphene. As the samples are much thicker, no
wrinkling was observed.

The conductivities of the graphene/PS nanocomposites, obtained by both four point and local
current measurement techniques, reveal high values up to 15 S/m and a low percolation threshold
85
 (0.9 wt.%) for the Oxi/red Chemically composites (Fig. 1). SEM and Conductive-AFM (see Fig. 2) show
the different graphene shapes, even inside the polymer, depending on the filler production method
used. Interesting differences in electronic transport behavior were also noticed, indicating at first
glance direct contact transport for Oxi/red Chemically graphene in contrast with tunneling for
Oxi/red Thermally and Sonic Solution graphene. The conductive properties of the composites studied
mainly depend on the initial morphological characteristics of the produced graphene and its
posterior organization inside the polymer matrix. These characteristics may have an important
influence also on the electronic transport behavior through the composite.

References

[1] S. Stankovich, D. A. Dikin, R. D. Piner, K. A. Kohlhaas, A. Kleinhammes, Y. Jia, Y. Wu, S. T. Nguyen, R. S. Ruoff, Carbon
2007, 45, (7), 1558-1565.
[2] M. J. McAllister, J. L. Li, D. H. Adamson, H. C. Schniepp, A. A. Abdala, J. Liu, M. Herrera-Alonso, D. L. Milius, R. Car, R.
K. Prud'homme, I. A. Aksay, Chemistry of Materials 2007, 19, (18), 4396-4404.
[3] M. Lotya, P. J. King, U. Khan, S. De, J. N. Coleman, Acs Nano 2010, 4, (6), 3155-3162.
[4] E. Tkalya, M. Ghislandi, A. Alekseev, C. Koning, J. Loos, Journal of Materials Chemistry 2010, 20, (15), 3035-3039.

Figures

Figure 1: Volume electrical conductivity of graphene/PS composites as a function of graphene weight fraction. Values
represent an average of 10 measurements for each sample; standard deviations are below 10%.
ABSTRACTS

Figure 2: C-AFM of the composites cross secrtion areas for the three graphene used. A) Oxi/red Chemically (inset linear I-V
curve), B) Oxi/red Thermally and C) Sonic Solution (inset exponential-like I-V curve) composites. Green/red spots
correspond to graphene paths wich contributes to conductivity through the sample.
86
Graphene based electronics and electron ‘optics’:
quantum transport and device opportunities

Redwan Sajjad, Frank Tseng and Dincer Unluer and Avik W. Ghosh
Electrical Engineering, University of Virginia, Charlottesville, VA 22901, USA
ag7rq@virginia.edu

Electronic conduction in graphitic materials can be quantitatively understood quite readily using the Landauer
transmission theory. We will start by showing that a wide variety of experiments can be explained (Fig. 1) simply in terms
of an integral over the mode spectra determined by the density of states, along with an energy-dependent scattering
length dictated by Fermi’s Golden Rule [1]. The theory, however, needs to be supplemented with a more involved
atomistic model when the sheets are narrowed down to nano-ribbon sizes [2]. Using non-orthogonal Extended Huckel
Theory, we demonstrate that the edges of narrow armchair nanoribbons resemble benzene minus their resonant
stabilization chemistry, imposing thus a molecular property to graphene electronics. The resulting strain along the edges
removes any signatures of metallicity, while edge roughness filters out the chiral segments with smaller bandgaps, making
the channel width the single arbiter of metallicity. We can thus design wide-narrow-wide all graphene devices
monolithically patterned out of a single graphene template [3]. A full solution of Poisson’s equation coupled with
quantum transport using a fully atomistic non-equilibrium Green’s function (NEGF) formalism shows that such a structure
benefits from the dual advantages of a superior 2D contact electrostatics as well as a quasi-Ohmic carbon based contact
resistance, mitigating short-channel effects that plague modern day silicon devices. However, the bane of these devices,
predictably, is their narrow bandgaps that lead to band-to-band tunnelling, once again, consistent with multiple
experiments. Our atomistic models allow us to quantify these effects [4].
The electronic gateability of graphene is fundamentally compromised by a trade-off imposed by an asymptotic property
of its bandstructure [5]. Atomistic simulations show that on opening a bandgap by various techniques (specifically,
selective doping of sheets, quantization in nanoribbons, and the use of transverse fields in Bernally stacked bilayer
sheets), the bandstructure stays pinned to a linear dispersion at high energies, so that the bandgap opens not by a simple
translation, but by an actual distortion of the bands. Such a distortion fundamentally increases the effective mass all
throughout the band, quantifiable in simple terms, leading to a reduction of their mobility even in the absence of any
increase in scattering rate. We predict a ~1/Eg reduction the mobility coming from the increase in effective mass alone,
and a further ~1/Eg reduction from an increase in scattering length (for bilayer sheets, there is, in addition, a sweet spot
due to Van Hove singularities, but the overall trend is still a fundamental reduction in mobility with increasing band-gap).
This means that with increase in switching reliability (ie, ON-OFF ratio), there is an invariable reduction in switching speed
(ON current), which limits the design space for graphene based electronic switches. Extended to graphene based
inverters, we expect accordingly a reduction in gain, a reduced voltage swing and a poor saturation of the transfer
characteristics, in close quantitative agreement with experiments [6].
A question we raise at the end is whether it is at all possible to design a graphene based switch without structurally
distorting it in the process of opening a band-gap. We show that this is in principle possible using purely geometrical
means, exploiting the pseudospin structure of the phase-coupled graphitic conduction and valence bands. It is, in fact,
this property that fundamentally distinguishes graphene from other 2D semiconductors such as silicon inversion layers,
boron nitride or molybdenum disulfide. In all narrow-bandgap semiconductors, a low voltage band-to-band tunneling
causes electrons to follow trajectories reminiscent of Snell’s law in optics, albeit with a ‘refractive index’ that can be gate
tuned into negativity. However, it is the pseudospin structure that determines the strength and angular quenching of the
refracted and reflected waves (the equivalent of Fresnel coefficients in optics) – in other words, Klein-antiKlein tunneling
in regular or bilayer sheets. In fact, we can see how this pseudospin rotates as we incrementally open a bandgap and
thereby introduce a pseudo-magnetic field. Our results compare well with recent experiments that show how this
ABSTRACTS

pseudospin selectivity controls a graphene pn junction resistance (both on exfoliated and CVD grown samples), with
varying tilt angles.
The theoretical and experimental gateability of a Klein tunnel switch is still quite modest to be of interest from a device
switching perspective. What we argue is that by introducing an additional scattering barrier from a non-graphitic
structure (e.g. a cut in a graphene sheet), we can introduce a transmission gap that arises when the angle subtended by
the cut at the source exceeds the critical angle for the graphene electrons. Aside from introducing a large ON-OFF ratio,
87
 the significant development is that this gap can be collapsed by reducing the voltage gradient across the junction [7]. Such
a gate tunable metal insulator transition does two things – it eliminates the current on the heterogeneous PN side of the
voltage axis [8], and significantly sharpens the rising current on the homogeneous PP or NN side, in fact, exceeding the
thermodynamic limit imposed by Boltzmann statistics that limits present day silicon based transistors. The unipolar, sub-
thermal switch (Fig. 1) arises simply because we can tune the transmission gap of the heterostructure with a gate voltage,
a property once again, unique to graphene and its pseudospin structure. We show how it allows us to design a high
quality inverter that can operate at a higher frequency [9]. We also show how the ability to control the electron trajectory
helps create reconfigurable electronic devices based on graphene heterojunctions.
The gate tunability of the gap is supported by fully atomistic simulations of current flow through large (~200x600nm)
sheets. However, these simulations also emphasize how sensitive graphene based electron ‘optics’ tends to be, outlining
three significant challenges that need to be overcome – (i) we need ways to collimate the electrons without significantly
excising their modal density and reducing the ON currents; (ii) we need ways to create high quality sheets and patterned
contacts to avoid unintentional rotations of the pseudospins from pseudo-magnetic fields at these junctions; and (iii)
most significantly, we need ways to flush out the electrons at the edges, which otherwise tend to redirect the electrons
back towards the junctions and create large, dissipative leakage paths.

References

[1] "Graphene Nanoribbons: from chemistry to circuits", F. Tseng, D. Unluer, M. R. Stan and A. W. Ghosh, invited book
chapter (Graphene Nanoelectronics: Metrology, Synthesis, Properties and Applications", Ed. H. Raza, Springer Series
in Materials Science 2012).
[2] "Diluted chirality dependence in edge rough graphene nanoribbon field-effect transistors", F. Tseng, D. Unluer, K.
Holcomb, M. Stan and A. W. Ghosh, Appl. Phys. Lett. Vol. 94, 223112 (2009).
[3] "Monolithically Patterned Wide-Narrow-Wide All-Graphene Devices", Dincer Unluer, Frank Tseng, Avik W. Ghosh,
Mircea R. Stan, IEEE Trans. Nano. issue 99, 2010.
[4] "Graphene Devices, Interconnect and Circuits -- Challenges and Opportunities", Mircea R. Stan, Dincer Unluer, Avik
Ghosh and Frank Tseng, IEEE International Symposium on Circuits and Systems (ISCAS), pp 69-72, 2009.
[5] "From low-bias mobility to high-bias current saturation: fundamental trade-offs in graphene based transistors",
Frank Tseng, Avik W. Ghosh, cond-mat/arXiv:1003.4551
[6] Frank Tseng, Dincer Unluer , Hong-yan Chen, Jeorg Appenzeller and Avik W. Ghosh, unpublished.
[7] "High efficiency switching using graphene based electron optics", R. Sajjad and A. W. Ghosh, Appl. Phys. Lett. Vol. 99,
123101 (2011)
[8] “Unipolar current voltage characteristics with graphene pn junctions”, R. Sajjad and A. W. Ghosh, in preparation.
[9] Redwan Sajjad, Chen-Yun Pan, Azad Naeemi and Avik W. Ghosh, unpublished.

Figures
ABSTRACTS

Figure 1: (Left) Experiments and (center) theory [1] showing graphene I-Vs with contact induced asymmetry and band-to-
band tunneling. (Right) atomistic simulations show that across a graphene heterojunction with a split gate, electronic
transmission can be quenched by the geometrical property of the pseudospin states (top) and completely eliminated with
a regular (as opposed to Klein) tunnel barrier in the graphene structure, using a cut for instance [9].
88
Study of double dip in the transfer characteristics of
graphene based field-effect transistors

1 2 2 1,2
Filippo Giubileo , Antonio Di Bartolomeo , Salvatore Santandrea , Francesco Romeo ,
1,2 3 3
Roberta Citro , Thomas Schroeder and Grzegorz Lupina
1
CNR-SPIN Salerno, via Ponte don Melillo, 84084 Fisciano (SA), Italy
2
Dipartimento di Fisica E. R. Caianiello and Centro Interdipartimentale Nanomates, Università degli Studi di Salerno,
via Ponte don Melillo, 84084 Fisciano (SA), Italy
3
IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
giubileo@sa.infn.it

We present measurements on Cr/Au-contacted long-channel (~10 µm) graphene transistors on Si/SiO2

substrate. We report the observation of hysteresis as well as double dips in the transfer characteristics,
that, as far as we know, have never been reported before on GFET with Cr/Au electrodes. Charge trapped
in the surrounding dielectric and in particular in silanol groups at the SiO2 surface is at the origin of
hysteresis; on the other hand, the gradient of carrier along the channel caused by electron transfer from
the graphene to the Au/Cr contacts and the band shift induced by the back-gate voltage and the SiO2-
trapped charge are proposed to accounts for the double-dip feature.
We show that p-n junctions are spontaneously formed by charge transfer between graphene and
electrodes, and a double Dirac point can be achieved when low-resistivity contacts are fabricated. We
further clarify the role of charge stored at the SiO2 interface in the formation of the double dip. Theoretical
modeling of experimental data was successfully implemented by taking into account a different doping at
contacts with respect to the bulk channel and partial charge pinning at the contacts.
We finally show that a double-dip enhanced hysteresis can conveniently be exploited to build graphene-
based memory devices.
References

[1] A. Di Bartolomeo et al., Nanotechnology 22 (2011) 275702 (8pp)

Figures
ABSTRACTS

Figure 1: (a) Transfer characteristic of a GFET with hysteresis and double dip. (b) Band diagrams of graphene between
source and drain and position of the Fermi level at different VGS for different gate voltages. For floating gate, the double
cone, close to the contacts, is shifted upward with respect to the one in the bulk channel to account for the p-type
graphene due to transfer of electrons from graphene to the Cr/Au leads.
89
 Roll to Roll Printing of
Aqueous Pristine Graphene Dispersions

1 2 1 1 2
N. Graddage , D. Parviz , T.C. Claypole , D.T. Gethin , M.J. Green
1
Welsh Centre for Printing and Coating, Swansea University, UK
2
Dept. Of Chemical Engineering, Texas Tech University, TX, USA
478018@swansea.ac.uk

Since the isolation and observation of graphene[1] there have been a vast number of proposed
applications for the material. With applications ranging from photovoltaic devices[2], touchscreens[3],
energy storage[4] and transistor electronics[5] the potential for graphene appears almost limitless.
However the commercial realisation of each application depends on graphene being produced and
deposited in a cheap, accurate and rapid manufacturing environment. This work aims to develop a stable
water based graphene solution and then deposit the graphene using a number of printing methods.
Graphene production techniques can be classified into two types; top down and bottom up. Bottom up
production describes the growth of graphene using epitaxial or CVD growth techniques. This tends to
result in high quality films and growth can be patterned precisely. However growth techniques tend to
require high temperatures and catalyst materials, limiting the choice of substrates. Bottom up growth
methods tend to require environments and timescales that are unsuitable for roll to roll production
techniques, though batch roll lamination of large area CVD grown graphene sheets has been
demonstrated.
Top down production techniques tend to separate the graphene sheets from a graphite precursor. This
can be performed in many ways, the most famous being the mechanical exfoliation method[1]. Other
separation methods include sonication in suitable solvents[6], reduction of graphene oxide and non
covalent functionalization of graphene in solution by stabilizers. Unlike bottom up methods, top-down
production methods allow for direct preparation of graphene dispersions or mass production of graphene
powders, which can then be dispersed in suitable solvents and deposited on proper substrate for further
device manufacturing. This will result in lower production costs and timescales, but at the same time the
conductivity and optical performance of graphene films may be hindered due to an increased contact
resistance between multilayers of graphene. However this method will still be suitable for many
applications, such as catalyst layers in dye sensitized photovoltaic cells which require large available
surface areas for which graphene powder will be preferable to large area flakes.
The initial stage of this research focused on the production of stable graphene solutions while avoiding the
use of conventional stabilizers such as surfactants. In first step, an aqueous solution of expanded graphite
and functionalized pyrene derivatives (or “π-π stackers”) was sonicated to increase the interlayer spacing
of graphene sheets. These stacker molecules adsorb on the surface of graphene layers through π-π
interactions between their aromatic basal planes. They prevent reaggregation of graphene sheets by
inducing steric and electrostatic repulsion forces between separated sheets[7,8]. The process was
followed by centrifugation step to remove undispersed graphite from the final graphene solution.
Compared to conventional stabilizers such as surfactants, these pyrene derivatives yield higher
ABSTRACTS

concentrations of graphene per mass of stabilizer.

These solutions were then tested with a variety of solution deposition methods to assess their suitability
for further device production. Initial tests focused on inkjet printing, a method that is ideal for low
viscosity solutions but limiting with respect to flake size due to the jetting nozzle diameter. The solution
was characterised to identify suitability for inkjet printing and it was found that the viscosity was below
90
recommended specifications and the surface tension was too high, however the solution was jettable. An
image of an inkjet print onto a Si wafer is shown in figure 1. Strategies for further optimisation of the fluid
for inkjet printing have been identified and further research is ongoing.
The solution was also deposited using a flexographic printing technique. This technique allows for higher
speeds than inkjet printing at the expense of feature resolution. Traditionally flexographic inks need to
have higher viscosities than inkjet inks, however techniques have been developed to partially overcome
these limitations and enable the flexographic printing of homogenous features using low viscosity inks.
This will allow minimisation of additive usage in the ink, which will tend to have a detrimental effect on the
electronic properties. Applying these techniques allowed features to be successfully printed. Analysis of
the electronic performance of these prints is also ongoing.
In conclusion, stable water based graphene dispersion has been produced using pyrene derivatives instead
of surfactants. This dispersion has then been deposited using two contrasting printing methods. This work
demonstrates the dispersion suitability for use in high speed, roll to roll device manufacture, which is one
of the keys to unlocking the commercial promise of graphene.
References

[1] Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V. & Firsov, A. A.,
Electric Field Effect in Atomically Thin Carbon Films, Science, 306 (2004) 666-669.
[2] Pang, S.; Hernandez, Y.; Feng, X.; Müllen, K., Graphene as Transparent Electrode Material for Organic Electronics,
Adv. Mater., 23 (2011) 2779-2795.
[3] Bae, S.; Kim, H.; Lee, Y.; Xu, X.; Park, J.-S.; Zheng, Y.; Balakrishnan, J.; Lei, T.; Ri Kim, H.; Song, Y. I.; Kim, Y.-J.; Kim, K. S.;
Ozyilmaz, B.; Ahn, J.-H.; Hong, B. H. & Iijima, S., Roll-to-roll production of 30-inch graphene films for transparent
electrodes, Nat Nano, 5 (2010) 574-578.
[4] Geim, A. K., Graphene: Status and Prospects, Science, 324 (2009) 1530-1534.
[5] Torrisi, F.; Hasan, T.; Wu, W.; Sun, Z.; Lombardo, A.; Kulmala, T.; Hshieh, G.W.; Jung, S.J.; Bonaccorso, F.; Paul, P.J.;
Chu, D.P.; Ferrari, A.C.; Ink-Jet Printed Graphene Electronics, arXiv:1111.4970v1 [cond-mat.mtrl-sci] (2011).
[6] Hernandez, Y.; Nicolosi, V.; Lotya, M.; Blighe, F. M.; Sun, Z.; De, S.; McGovern, I. T.; Holland, B.; Byrne, M.; Gun'Ko, Y.
K.; Boland, J. J.; Niraj, P.; Duesberg, G.; Krishnamurthy, S.; Goodhue, R.; Hutchison, J.; Scardaci, V.; Ferrari, A. C. &
Coleman, J. N., High-yield production of graphene by liquid-phase exfoliation of graphite, Nat Nano, 3 (2009) 563-
568.
[7] An, X.; Simmons, T.; Shah, R.; Wolfe, C.; Lewis, K. M.;Washington, M.; Nayak, S. K.;Talapatra, S.; Kar, S., Stable
Aqueous Dispersions of Noncovalently Functionalized Graphene from Graphite and their Multifunctional High-
Performance Applications. Nano Letters, 10 (2010) 4295-4301.
[8] Zhang, M.; Parajuli, R. R.; Mastrogiovanni, D.; Dai, B.; Lo, P.; Cheung, W.; Brukh, R.; Chiu, P. L.; Zhou, T.; Liu, Z.;
Garfunkel, E.; He, H., Production of Graphene Sheets by Direct Dispersion with Aromatic Healing Agents. Small, 6
(2010) 1100-1107.

Figures
ABSTRACTS

Figure 1: 6.5x optical image of aqueous graphene solution inkjet printed onto Si wafer.
91
 Interaction effects
in graphene heterostructures

Francisco Guinea
Instituto de Materiales de Madrid. CSIC, Spain

Recent experiments have shown a variety of effects induced by the electron-electron interaction in
graphene single layers and bilayers, as well as in graphene heterostructures [1-5] made up by combining
layers of graphene and boron nitride.

We analyze the electron-hole pairs and plasmons of these structures. These excitations modify the
electron-electron interactions, and they can lead to the superconducting pairing at observable carrier
concentrations and temperatures [6,7].

References

[1] A. S. Mayorov, R. V. Gorbachev, S. V. Morozov, L. Britnell, R. Jalil, L. A. Ponomarenko, P. Blake, K. S. Novoselov,

K.Watanabe, T. Taniguchi, and A. K. Geim, Nano Lett. 11, 2396 (2011).
[2] L. A. Ponomarenko, A. K. Geim, A. A. Zhukov, R. Jalil, S. V. Morozov, K. S. Novoselov, V. V. Cheianov, V. I. Fal'ko, K.
Watanabe, T. Taniguchi, and R. V. Gorbachev, Nature Phys. 7, 958 (2011).
[3] G.-H. Lee, Y.-J. Yu, C. Lee, C. Dean, K. L. Shepard, P. Kim, and J. Hone, Appl. Phys. Lett. 99, 243114 (2011).
[4] L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, M. I. Katsnelson, L. Eaves, S. V. Morozov, N. Peres, J. Leist,
A. K. Geim, K. S. Novoselov, and L. A. Ponomarenko (2011), Science 335, 947 (2012).
[5] L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, M. I. Katsnelson, L. Eaves, S. V. Morozov, A. S. Mayorov, N.
Peres, A. H.Castro Neto, J. Leist, A. K. Geim, L. A. Ponomarenko and K. S. Novoselov (2012), arXiv:1202.0735.
[6] B. Uchoa and A. H. Castro Neto, Phys. Rev. Lett. 98, 146801 (2007),
[7] W. Kohn and J. M. Luttinger, Phys. Rev. Lett. 15, 524 (1965),
ABSTRACTS
92
Mechanism of Growth of Graphene Grains on Copper
during Low Pressure Chemical Vapor Deposition

Zheng Han, Amina Kimouche, Adrien Allain, Hadi Arjmandi-Tash, Antoine Reserbat-Plantey,
Sébastien Pairis, Valérie Reita, Nedjma Bendiab, Johann Coraux & Vincent Bouchiat
Institut NÉEL, CNRS & Université Joseph Fourier, BP166, F-38042 Grenoble Cedex 9, France
zheng.han@grenoble.cnrs.fr

Graphene grown by chemical vapor deposition (CVD) on Cu is very promising for future graphene
applications, as it meets the two requirements for batch production, namely: 1) large size and self
limitation to a single-layer of graphene and 2) easy transfer onto arbitrary substrates [1-4]. New insights
for controlling CVD processes, e.g. leading to dendritic growth of graphene flakes [5], or allowing for
controlling the size of hexagonal islands [6], were recently demonstrated.

Although extensive studies have been conducted on the CVD of graphene on Cu, some of the processes
involved during growth remain to be elucidated. Two important remaining issues are: (1) the parasitic
formation of multilayer regions [7-8], and (2) the occurrence of both hexagonal-shaped and dendritic
flakes.

In this work, we report on a systematic study of the CVD growth mechanism of graphene on Cu under low
gas pressure (1 mbar total pressure of a Ar/H2/CH4 mixture). Before graphene islands merge into a
continuous layer, various shapes can be found for graphene flakes, ranging from hexagonal ones to flower-
like dendritic ones, depending on the growth conditions (inset of Figure 1). Besides flowershaped islands
coexist with smaller ones, hexagonally-shaped (Figure 2a). We found no indication for two preferential
crystallographic orientations which would each correspond to one type (larger or smaller) of islands.
Neither do we find any correlation between the island size and the distance to the nearest neighbor island.
We analyzed the roughness of the edges of graphene islands with different sizes by measuring the
perimeter of the islands against their area (Figure 1). A plot of hexagonal shape is shown in Figure 1 as a
reference. One can see that the smallest islands have almost hexagonal shape, and the larger the islands,
the more they diverge from the hexagonal shape, which reveals the that graphene growth begins with the
nucleation of hexagonal islands latter evolving into dendritic lobe-shaped islands, which is illustrated by
our model in Figure 3a, as well as the model proposed in other works [9,10].

Interestingly, the larger lobe-shaped islands are very likely comprising in their center a two- (or even more)
layer region (Figure 2) as already observed in previous reports [8,11,12]. The shape and size of the second
layer centered in the large islands are strikingly similar to that of smaller islands in between larger islands.
This bimodality in island shapes and sizes can be explained by the fact that the larger islands are the result
of surface growth from an adatom carbon gas at high temperature, and that the smaller islands develop
upon cooling down after growth, via segregation of carbon atoms stored at Cu defects extending out of
the surface plane (Figure 3b). Moreover, a recent study suggests that the central layer is underneath the
ABSTRACTS

first larger layer [13]. Actually, it is known that multilayer and inhomogeneous graphene results from
enhanced carbon segregation, which is favored at defects such as screw dislocations or grain boundaries
[14]. In the light of all above, there are two routes to suppress these carbon inhomogeneities: either by
suppressing the surface defects via graphene deposition on top of high quality metallic surfaces (single
crystal metal, epitaxial thin films), or by keeping standard low-cost copper foil but depleting nucleation at
defects upon cooling.
93
 References

[1] X. Li, et al Science 324 (2009) 5932.

[2] K. S. Kim, et al Nature 457 (2009) 706.
[3] S. Bae, et al Nat. Nanotech. 5 (2010) 574.
[4] D. R. Cooper, et al arXiv: 1110.6557v1
[5] X. Li, et al J. Am. Chem. Soc. 133 (2011) 2816
[6] Q. K. Yu, et al Nature Materials 10 (2011) 443
[7] K. Yan, et al NanoLett. 11 (2011) 1106
[8] A. W. Robertson, et al NanoLett. 11 (2011) 1182
[9] S. Nie, et al Phys. Rev. B 84 (2011) 155425
[10] C. Hwang, et al J. Phys. Chem. C, (2011), DOI: 10.1021/jp205980d.
[11] I. Vlassiouk, et al ACSnano 5 (2011) 6069
[12] G. X. Ni, et al ACSnano DOI: 10.1021/nn203775x
[13] S. Nie, et al arXiv: 1202.1031v1
[14] S. Yoshii, et al NanoLett. 11 (2011) 2628

Figures

Figure 1: Plot of the perimeter of graphene islands as a function of their area. Squares represent for graphene islands
prepared by CVD growth. The green dots correspond to perfect hexagonal islands. Inset: a, b, c, are SEM images of
graphene islands found on one single Cu foil obtained via CVD growth (2 sccm CH4, 20 min, 1 mbar), which presents three
different stages of the growth: start of the hexagonal nucleation, diffusive lobe-shape flower, flower with a “seed” in the
center. Scale bars for the inset are 3 μm.

Figure 3: a) A simple model showing the

Figure 2: a) Scanning electron micrograph images of graphene
formation of graphene islands from the
flakes grown on Cu under the condition of 1000 oC, 2 sccm CH4, 1
beginning of their nucleation to the final
mbar, for 20 minutes. Scale bar is 10 μm; b) AFM image of one of
continuous layer; b) Schematic of the flower
ABSTRACTS

the flowers shown in a. A profile of the cross section of this

centers formed at the defect sites during cooling
flower is given below.
down.
94
Production and Applications of
Graphene for Large-Area Electronics

Byung Hee Hong

Department of Chemistry, Seoul National University, Seoul 151-747, Korea
byunghee@skku.edu

Graphene has been attracting tremendous attention owing to its fascinating physical properties including
quantum electronic transport phenomena, ultrahigh mobility, superb elasticity, thermal conductivity and
mechanical strength. There have been many efforts to utilize these outstanding properties of graphene for
macroscopic applications such as transparent conducting films useful for flexible/stretchable electronics.
However, the scale and the quality graphene need to be further enhanced for practical applications by
developing more efficient synthesis, transfer and doping methods. In this talk, the recent advances in
large-area graphene synthesis/doping/transfer will be reviewed first, and the various applications to
graphene-based large-area electronics will be discussed.

References

[1] S. Bae et al. Nature Nanotech. 5, 574 (2010).

[2] K. S. Kim et al. Nature 457, 706 (2009).

ABSTRACTS
95
 Korean Graphene Research Activities and Roadmap

Byung Hee Hong

Department of Chemistry, Seoul National University, Seoul 151-747, Korea
byunghee@skku.edu

Recently, Korean government has approved a plan for commercializing graphene technologies, including
graphene-based touch panels, organic light-emitting diodes (OLEDs), electro-chromic smart windows,
secondary batteries for electronic vehicles, high-voltage high-power supercapacitors, ultra-light and strong
composites, high-performance gas barrier films, electro-magnetic interference shielding, and
environmentally friendly anti-oxidation steel plates. These items have been carefully selected considering
economic efficiency and technological feasibility. In addition, Korea is also planning a “Korean Graphene
Hub” project that is focusing on the fundamental sciences of graphene and related 2D materials,
separately. In this talk, the brief history, recent status, and prospect of Korea’s graphene projects will be
introduced, and discuss how we can harmonize the world-wide graphene projects based on international
collaboration rather than competition.
ABSTRACTS
96
Preparation and Application of
Chemically Functionalized Graphene

Mark C. Hersam
Department of Materials Science and Engineering; Northwestern University;2220 Campus Drive, Evanston, IL 60208-3108
http://www.hersam-group.northwestern.edu/

Graphene has emerged as one of the leading materials in condensed matter physics due to its superlative
electrical and mechanical properties. With an eye towards expanding its functionality and applications,
this talk will highlight our latest efforts to tailor the surface chemistry of graphene via chemical
functionalization [1]. At the molecular scale, we employ ultra-high vacuum (UHV) scanning tunneling
microscopy (STM) and conductive atomic force microscopy (cAFM) to characterize chemically modified
epitaxial graphene on SiC(0001) [2,3]. For example, a suite of perylene-based molecules form highly
ordered self-assembled monolayers (SAMs) on graphene via gas-phase deposition in UHV [4,5]. Due to
their noncovalent bonding, these SAMs preserve the superlative electronic properties of the underlying
graphene while providing uniform and tailorable chemical functionality [6]. In this manner, disparate
materials (e.g., high-k gate dielectrics) can be seamlessly integrated with graphene, thus enabling the
fabrication of capacitors, transistors, and related electronic/excitonic devices [7]. Alternatively, via aryl
diazaonium chemistry, functional polymers can be covalently grafted to graphene [8], while exposure to
atomic oxygen in UHV enables chemically homogeneous and thermally reversible epoxy functionalization
of graphene [9]. In addition to presenting opportunities for graphene-based chemical and biological
sensing, covalent grafting allows local tuning of the electronic properties of the underlying graphene.
Beyond UHV STM characterization, this talk will also delineate our most recent efforts to exploit
chemically functionalized graphene in technologically significant applications. Specific examples include
the utilization of graphene oxide as an interfacial layer in organic photovoltaic devices [10], solution-
processed graphene for transparent conductors [11-13] and flexible GHz transistors [14], pluronic-
dispersed graphene for in vivo biomedical applications [15,16], and graphene-titania nanocomposites as
photocatalysts for the production of solar fuels from carbon dioxide [17].

References

[1] Q. H. Wang and M. C. Hersam, MRS Bulletin, 36, 532 (2011).

[2] J. A. Kellar, et al., Applied Physics Letters, 96, 143103 (2010).
[3] J. M. P. Alaboson, et al., Advanced Materials, 23, 2181 (2011).
[4] Q. H. Wang and M. C. Hersam, Nature Chemistry, 1, 206 (2009).
[5] Q. H. Wang and M. C. Hersam, Nano Letters, 11, 589 (2011).
[6] J. D. Emery, et al., Surface Science, 605, 1685 (2011).
[7] J. M. P. Alaboson, et al., ACS Nano, 5, 5223 (2011).
[8] Md. Z. Hossain, et al., Journal of the American Chemical Society, 132, 15399 (2010).
[9] Md. Z. Hossain, et al., Nature Chemistry, in press, DOI: 10.1038/nchem.1269 (2012).
[10] I. P. Murray, et al., Journal of Physical Chemistry Letters, 2, 3006 (2011).
ABSTRACTS

[11] A. A. Green and M. C. Hersam, Journal of Physical Chemistry Letters, 1, 544 (2010).
[12] A. A. Green and M. C. Hersam, Nano Letters, 9, 4031 (2009).
[13] Y. T. Liang and M. C. Hersam, Journal of the American Chemical Society, 132, 17661 (2010).
[14] C. Sire, et al., Nano Letters, in press, DOI: 10.1021/nl203316r (2012).
[15] M. C. Duch, et al., Nano Letters, 11, 5201 (2011).
[16] J.-W. T. Seo, et al., Journal of Physical Chemistry Letters, 2, 1004 (2011).
[17] Y. T. Liang, et al., Nano Letters, 11, 2865 (2011).
97
 Tayloring the graphene/silicon carbide interface:
a material system for monolithic wafer-scale electronics

1 1 1 2 2
Stefan Hertel , Daniel Waldmann , Johannes Jobst , Sergey Reshanov , Adolf Schöner ,
1 1
Michael Krieger , Heiko B. Weber
1
Chair of Applied Physics, University of Erlangen-Nuremberg, Staudtstraße 7, 91058 Erlangen, Germany
2
ACREO AB, Electrum 236, 16440 Kista, Sweden
Stefan.Hertel@physik.uni-erlangen.de

Graphene has many outstanding electronic properties and a vision of post-silicon electronics based on
graphene is discussed. However, due to the absence of an electronic band gap transistors with high on/off
ratio are still lacking[1]. Consequently, graphene circuits are currently limited to analogue amplification[2]
and further modifications are needed for logic applications. Many efforts have been undertaken to
establish a gap in graphene devices, with a band gap induced by bilayer graphene, spatial confinement,
localization and chemical modification, resulting in rather small effects remote from technical
requirements. For wafer based applications, we consider epitaxial graphene on silicon carbide (0001) as
the first choice[3]. We propose a concept that monolithically employs the entire system epitaxial
graphene, consisting of graphene, silicon carbide, and their common interface. For a transistor, graphene
can be used as source, drain and gate electrode. The wide band gap semiconductor substrate silicon
carbide forms the channel. Finally, two differently tailored interfaces introduce transistor functionality.
The result is an epitaxial graphene transistor with high on/off ratio exceeding 104(see Fig. 1). Depending on
the underlying substrate, both normally-on and normally-off operation is possible. The concept’s particular
strength is its capability for integration: within the same processing effort many epitaxial graphene
transistors can be combined and complex circuits can be designed. In principle any logic functionality can
be implemented.

References

[1] Schwierz, F., Nature Nanotachnology, 5 (2011) 487-496.

[2] Lin, Y.-M.; Valdes-Garcia, A.; Han, S.-J.; Farmer, D. B.; Meric, I.; Sun, Y.; Wu, Y.; Dimitrakopoulos, C.; Grill, A.; Avouris,
P.; Jenkins, K. A., Science, 332 (2011) 1294-1297.
[3] Emtsev, K. V.; Bostwick, A.; Horn, K.; Jobst, J.; Kellogg, G. L.; Ley, L.; McChesney, J. L.; Ohta, T.; Reshanov, S. A.; Rohrl,
J.; Rotenberg, E.; Schmid, A. K.; Waldmann, D.; Weber, H. B.; Seyller, T., Nature Materials, 8 (2009) 203-207.
[4] Jobst, J.; Waldmann, D.; Speck, F.; Hirner, R.; Maude, D. K.; Seyller, T.; Weber, H. B., Solid State Communications, 151
(2011) 1061-1064.
[5] Gerhard Pensl, F. C., Thomas Frank, Michael Krieger, Sergey Reshanov, Frank Schmid, Michael Weidner, International
Journal of High Speed Electronics and Systems, 15 (2005) 705-745.
[6] Riedl, C.; Coletti, C.; Iwasaki, T.; Zakharov, A. A.; Starke, U., Physical Review Letters, 103 (2009) 246804.
ABSTRACTS
98
Figures

Figure 1: Figure 1a shows a scheme of our device. The graphene/silicon carbide interface is tailored in two different ways
resulting in contact graphene with ohmic contact to the semiconducting layer and gate graphene forming a Schottky
contact. With these components we define a MeSFET-like transistor with silicon carbide as the semiconductor and
graphene playing the role of both contact and gate metal. Figure 1b displays the transfer characteristics for various
temperatures. On/off ratios were determined between VTG = 0V and the minimum ID value (indicated by arrows). The
largest on/off contrast is achieved at T = 220 K. Improved surface quality, resulting in more homogeneous Schottky
barriers, is expected to further reduce leakage currents and to extend high on/off performance to room temperature and
beyond.

ABSTRACTS
99
 Scattering mechanisms that cause 1/f noise in graphene

A. A. Kaverzin, A. S. Mayorov, A. Shytov, D. W. Horsell

School of Physics, University of Exeter, Exeter, EX4 4QL, UK
D.W.Horsell@exeter.ac.uk

We experimentally study the effect of different scattering potentials on the 1/f noise observed in
graphene devices on silica and silicon nitride substrates. The noise in nominally identical devices is seen to
behave in two distinct ways as a function of carrier concentration, changing either monotonically or
nonmonotonically. We attribute this to the interplay between long- and short-range scattering
mechanisms. Water was found to significantly enhance the noise magnitude and change the type of the
noise behaviour. By using a simple model, we show that water is a source of long-range scattering. Its
presence on the graphene surface was found to increase the noise by an order of magnitude, yet cause a
comparatively insignificant change in the resistance, which demonstrates that low-frequency noise and
resistance in graphene can be determined by different scattering mechanisms. We have also shown that
the 1/f noise at the Dirac point and at finite concentration originates from different sources of scattering
and most likely from different fluctuation mechanisms.
ABSTRACTS
100
Impact of Short Range Scattering in Graphene Electronics

Allen Hsu, Ki Kang Kim, Daniel Nezich, Rachel Luo, Han Wang, Jing Kong, Tomas Palacios
Massachusetts Institute of Technology, 60 Vassar Street, Cambridge, U.S.A.
allenhsu@mit.edu

The extremely high carrier mobility of graphene, in excess of 100,000 cm2V-1s-1 [1], has inspired a large
number of new opportunities for this amazing material. Some examples, include ultra-thin-body graphene
transistors potentially enabling radio frequency (RF) circuits operating in the terahertz regime, graphene
interconnects with low resistance and capacitance to replace copper, and a cost-effective replacement for
Indium Tin Oxide (ITO) transparent conductive electrodes in light emitting diodes (LEDs), solar cells and flat
panel displays [2-4].

In spite of these applications, the predominant interest in graphene research has focused primarily on
studying the low carrier density (ns) transport regime < 1-2x1012 cm-2, where record mobility values have
been achieved. However for almost all applications of graphene, typically operating carrier densities are
greater than 2x1012 cm-2, especially in applications of graphene operating as a transparent conductor or in
radio frequency transistors where large sheet charges are necessary for adequate gain. While low carrier
concentration transport studies have allowed for many fundamental studies of relativistic physics and
ballistic transport in devices, transport studies at higher carrier densities are as important for many
commercial applications. Therefore, this work focuses on examining the transport limiting mechanisms in
graphene and their implications on three different device applications (1) transparent conductive
electrodes, (2) graphene-metal contact resistance, and (3) graphene interconnects. Through Hall
Measurements on graphene grown by chemical vapor deposition, we examine the high carrier density
mobility degradation due to short range scatters. To isolate the physical origin of short range scattering in
graphene, we have examined the mobility of various growth conditions comparing copper and nickel
synthesized graphene. Furthermore, we compared the effect of various dopants, such as Aluminum oxide,
on carrier mobility and extracted the ratio between the density of charged impurity and short range
scatters from our data as well as values from literature [5][6].

References

[1] K. Bolotin, K. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, H. Stromer, Solid State Communications, 9
(2008) 351.
[2] R. Murali, K. Brenner, Y. Yang, T. Beck, J.D. Meindl, IEEE Electron Device Letters, 6 (2009) 611.
[3] S. De, J.N. Coleman, ACS Nano, 5 (2010) 2713.
[4] J.S. Moon, D. Curtis, M. Hu, D. Wong, C. McGuire, P.M. Campbell, G. Jernigan, J.L. Tedesco, B. VanMil, R. Myers-
Ward, C. Eddy, D.K. Gaskill, IEEE Electron Device Letters, 6 (2009) 650.
[5] C.R. Dean, A.F. Young, I. Meric, C. Lee, L. Wang, S. Sorgenfrei, K. Watanabe, T. Taniguchi, P. Kim, K.L. Shepard, J.
ABSTRACTS

Hone, Nature Nanotechnology, 10 (2010) 722.

[6] L. A. Ponomarenko, R. Yang, T.M. Mohuiddin, M.I. Katsnelson, K. S. Novoselov, S. V. Morozov, A. A. Zhukov, F.
Schedin, E. W. Hill, A. K. Geim, Physics Review Letters, 20 (2009) 206603.
101
 Figures

4
10

µ (cm /Vs)
2

3
10
LPCVD Cu−G
APCVD Ni−G
LPCVD Cu−G + Al(ox)
hBN− HOPG SLG (Columbia)
SiC−Si Face (NRL)
1/µ0 + ns/C (C=2.0e+016,µ0 =1.0e+004)
1/µ0 + ns/C (C=1.0e+016,µ0 =5.0e+003)
1/µ + n /C (C=1.0e+017,µ =4.8e+004)
0 s 0

11 12 13 14
10 10 10 10
2
n (1/cm )
s

Figure 1: Mobility versus Carrier Concentration for various films. (x) – low pressure CVD graphene grown on Cu (Δ) –
ambient pressure graphene grown on Nickel (●) LPCVD Graphene on Copper with Al(ox) layer (○) HOPG on hBN [5] (+) SiC
Si Face [6]

3
10 LPCVD Cu−G
LPCVD Cu−G + Al(ox)
hBN−HOPG SLG (1−hBN/1−SLG)
1/µ + n /C (C=2.0e+016,µ =1.0e+004)
0 s 0
1/µ + n /C (C=1.0e+016,µ =5.0e+003)
0 s 0
1/µ + n /C (C=1.0e+017,µ =4.8e+004)
0 s 0

2
10
ρ (µΩ−cm)

1
10

Cu

0
10 11 12 13 14
10 10 10 10
2
ns (1/cm )

Figure 2: Specific Resistivity plotted as a function of carrier concentration. Copper values were obtained from literature [2].
ABSTRACTS
102
Self-Assembled Graphene Nanosacks

Yantao Chen, Fei Guo, Ashish Jachak, Sang-Pil Kim, Dibakar Datta, Jingyu Liu, Indrek Kulaots,
Charles Vaslet, Hee Dong Jang, Jiaxing Huang, Agnes Kane, Vivek B. Shenoy, Robert H. Hurt
Brown University, Providence, Rhode Island, USA
Northwestern University, Evanston, Illinois, USA

Robert_Hurt@brown.edu

Graphene oxide (GO) is a promising giant molecular precursor for the creation of new carbon materials,
because it can be aligned, stacked, folded, or otherwise assembled in the colloidal state into complex two-
or three-dimensional structures [1-6] and then reduced to carbon. Here we show that monolayer
graphene oxide can be co-suspended with a variety of second components in dilute aqueous phases and
ultrasonically nebulized and dried/heated to produce electron transparent graphene “sacks” that
encapsulate an internal cargo.

Graphene oxide was prepared by a modified Hummers method and purified by a two-step acid-acetone
wash [7]. Suspensions were ultrasonically aerosolized to produce a mist of microdroplets suspended in a
gas flow, which were dried in situ by heating (70-600 C). When graphene oxide is the only component in
suspension, the products are crumpled graphene nanoparticles similar to those reported recently [5,8]. In
the presence of a second component, however, the products are “filled graphene nanosacks” (Fig. 1). At
low filler concentrations, the crumpled nanoparticle structure is preserved but the second component is
found inside a thin graphene shroud (Fig. 1a). At higher filler concentrations, we still see a graphene
shroud (Fig. 2b), but the graphene has fewer creases and the structure resembles a sack with a cluster of
filler (Ag nanoparticles) as contents or “cargo”. The filler appears to act as a scaffold that mechanically
supports the graphene sack and prevents complete collapse to crumpled graphene. We have also
fabricated filled graphene nanosacks using cargos that include hydrophilic, arylsulfonated carbon black
nanoparticles (Fig. 1f), fluorescein-sodium dye, and salmon sperm DNA. If the chosen filler has a high
atomic number, it can be directly visualized inside the sack by SEM (Fig. 1a, b). Organic or carbon-based
fillers are not easily observable, but their presence is reflected in the swollen sack structure (Fig.1f), and
can be seen by TEM.

We propose that the filled graphene nanosacks are a self-assembled structure that occurs by spontaneous
segregation of the sack and filler into a core-shell symmetry. There is a thermodynamic driving force for
GO to adsorb at the liquid-vapor interface, and previous studies have reported the formation of GO
surface films on drying droplets [3]. In addition, GO has a large hydrodynamic radius (750 nm) and low
diffusion coefficient, and as a result is overtaken and scavenged by the receding water-air interface during
droplet drying. To better understand formation mechanisms, we carried out molecular dynamics (MD)
simulations of droplet drying in the presence of monolayer graphene (Fig. 2a) and graphene oxide (Figure
2b). For graphene there is a noticeable gap at the water interface, and the droplet appears to template or
ABSTRACTS

guide the graphene into a scroll structure during drying. We believe that weak van der Waals forces in the
water/graphene system [9] allow graphene to slide on the droplet surface, which enables this “guide and
glide” assembly mode. Graphene oxide in contrast clings to the droplet surface through hydrogen bond
interactions and is dragged inward as the droplet volume is reduced by drying (“cling and drag”
mechanism). These simulations together with calculations of diffusion rates for the sacks and fillers lead to
the conceptual model shown in Fig. 3 for the formation of filled graphene nanosacks.
103
 We currently envision a broad set of technological uses for filled graphene nanosacks. Many potential
applications derive from the ability of sacks to isolate nanoparticle cargos from biological tissue or the
natural environment where particle release is undesirable due to human or ecological toxicity. Inside the
sacks, nanoparticle cargos can be isolated from biological target molecules associated with toxicity, while
still exhibiting useful photonic, magnetic, or radiological functions.

References

[1] Ruoff, R. Nat. Nanotechnol. 3, (2008) 10.

[2] Compton, O. C.; Nguyen, S. T. Small 6 (2010) 711.
[3] Guo, F.; Kim, F.; Han, T. H.; Shenoy, V. B.; Huang, J.; Hurt, R. H. ACS Nano, 5 (2011) 8019.
[4] Guo, P.; Song, H.; Chen, X. J. Mater. Chem. 20, (2010) 4867.
[5] Luo, J.; Jang, H. D.; Sun, T.; Xiao, L.; He, Z.; Katsoulidis, A. P.; Kanatzidis, M. G.; Gibson, J. M.; Huang, J. ACS Nano 5
(2011) 8943.
[6] Zhou, X.; Wang, F.; Zhu, Y.; Liu, Z. J. Mater. Chem. 21 (2011), 3353.
[7] Kim, F.; Luo, J.; Cruz-Silva, R.; Cote, L. J.; Sohn, K.; Huang, J. Adv. Funct. Mater. 20 (2010) 2867.
[8] Ma, X.; Zachariah, M. R.; Zangmeister, C. D. Nano Lett. in press, 2012.
[9] Leenaerts, O.; Partoens, B.; Peeters, F. M. Phys. Rev. B 79 (2009) 235440.

Figures

Figure 1: Filled graphene nanosacks from drying

binary microdroplet suspensions. (a) SEM of Ag-
nanoparticle-filled sacks at low loading (Ag:GO
mass ratio 0.06); (b,c,d) SEM/TEMs of silver
nanoparticles at higher loading (Ag:GO mass ratio
+
2); (e) Time-resolved release of Ag in 5 mM pH 4
acetate buffer from gradual oxidation of
encapsulated nano-silver particles, vs. free Ag
nanoparticle control to show the inhibiting effect
of encapsulation, (f) hydrophilic, aryl-sulfonated
carbon black (CB) nanoparticles at high loading
(CB:GO ratio 2).

Figure 2: Mechanisms of
nanosack formation. (a,b)
Molecular dynamics
simulations of water-
droplet-actuated scrolling, Figure 3: Conceptual model for the colloidal self-
folding, or collapse for (a) assembly of filled graphene nanosacks.
monolayer graphene, which Microdroplet drying leads to graphene oxide
scrolls through a “guide and adsorption and scavenging at the receding
glide” mechanism; (b) gaswater interface, while the second component
diffuses away from the interface becomes
ABSTRACTS

Monolayer GO which closes

and collapses by a “cling
and drag” mechanism.
104
incorporated in the final nanoparticle core.
Colloidal segregation is followed by sack closure
and collapse by capillary forces. High filler
loading acts as a scaffold to prevent complete
sack collapse.
Transport phenomena in nanostructured graphene

Antti-Pekka Jauho
Center for Nanostructured Graphene (CNG), Department of Micro and Nanotechnology, Technical University of Denmark,
Kongens Lyngby, DK 2800 Denmark
Antti-Pekka_Jauho@nanotech.dtu.dk

In order to realize many of the promises that graphene may fulfill, the pristine sheet must be modfied so
as to display a band gap, at least in certain regions in space. This can be achieved, e.g., by a selective
adsorption of adatoms, by cutting the graphene sheet into a nanoribbon, or by applying a transverse
electric field to a bilayer graphene. Here we describe yet another route: a regular perforation of the
graphene sheet, dubbed as graphene antidot lattice (GAL). Our group developed this idea in 2008 [1], and
since then many groups have followed route, either independently, or by using the concepts we
introduced. We describe the basic theoretical ideas, review the experimental situation and some aspects
of the rapidly growing theoretical literature, and report on our recent simulations of charge and thermal
transport in finite GALs [2]. We also address how very large systems of nanostructured graphene may be
amenable to simulations using first-principles input [3].

References

[1] T. G. Pedersen, C. Flindt, J. Pedersen, N. A. Mortensen, A. P. Jauho, and K. Pedersen, Phys. Rev. Lett. 100, 136804
(2008)
[2] T. Gunst, T. Markussen, A. P. Jauho, and M. Brandbyge, Phys. Rev. B 84, 155449 (2011)
[3] A. Uppstu, K. Saloriutta, A. Harju, M. Puska, and A. P. Jauho, Phys. Rev. B 85, 041401 (2012) (RC)

ABSTRACTS
105
 Raman spectroscopy
of electrochemically doped 1-LG and 2-LG

a,b b a b,c
Martin Kalbac , Jing Kong , Ladislav Kavan and Mildred S. Dresselhaus
a
J. Heyrovský Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, v.v.i.,
Dolejškova 3, CZ-18223 Prague 8, Czech Republic
b
Department of Electrical Engineering and Computer Science, MIT, Cambridge, Massachusetts 02139, USA
c
Department of Physics, MIT, Cambridge, Massachusetts 02139, USA
kalbac@jh-inst.cas.cz

The doping of graphene can be realized chemically, electrochemically or by electrostatic charging. The
electrochemical doping can be easily controlled and it allows to reach relatively high doping levels of
graphene. The doping of graphene leads to a shift of the Fermi level and therefore it represents a simple
way to control graphene electrical and optical properties. These changes can be monitored and studied
using Raman spectroscopy. In our study we compared the influence of electrochemical doping on the
Raman spectra of one-layer and two-layer graphene. In the case of two layer graphene we prepared
isotopically engineered sample where one layer of graphene was formed by 13C isotope while the second
layer by 12C isotope. This approach allowed us to monitor charge distribution between the top and bottom
layer which is important for prospective application of two layer graphene in electronic devices.

References

[1] M. Kalbac,H. Farhat, J. Kong, P. Janda, L. Kavan, and M. S. Dresselhaus: Nanoletters, 11(5),1957-1963 (2011).
[2] M. Kalbac,A. Reina-Cecco, H. Farhat, J. Kong, L. Kavan, and M. S. Dresselhaus: ACS Nano, 4 (10), 6055-6063 (2010).
ABSTRACTS
106
Graphene – CdSe/ZnS quantum dots conjugated systems:
charge transfer phenomena and their applications

Alexander V. Klekachev1,2, Inge Asselberghs1, Sergey N. Kuznetsov3, Johan Hofkens2, Marleen H. van der
Veen1, Afshin Hadipour1, André L. Stesmans2, Marc M. Heyns1,2, Stefan De Gendt1,2
1
imec, Kapeldreef 75, B-3001 Leuven, Belgium
2
Katholieke Universiteit Leuven, Celestijnenlaan 200d, B-3001 Leuven, Belgium
3
Petrozavodsk State University, Lenin av. 33, 185910, Petrozavodsk, Russia
alexander.klekachev@imec.be

Graphene possesses unique physical properties, due to its specific energy bands configuration,
substantially different from that of materials traditionally employed in solid-state electronics. Among the
variety of remarkable properties, high transparency in the visible-light range and low resistivity of
graphene sheets are the most attractive ones for optoelectronic applications.
Zero-dimensional colloidal semiconductor nanocrystals, known as quantum dots (QDs), attract immense
attention in the field of photonics due to their size-dependent tunable optoelectronic properties. Their
interaction with conductive surfaces is often reported to provide energy transfer instead of the charge
transfer mechanism under presence of optical excitation. In this work, we demonstrate the role of single
layer graphene (SLG) as an efficient charge transfer agent when conjugated with CdSe/ZnS core/shell
quantum dots.
We first demonstrate quenching of QDs photoluminescence (PL) on the graphene surface. Firgure 1a
shows single-layer graphene flake exfoliated on a glass substrate followed by dispersion of QDs. Figure 1b
reveals PL image of the same area obtained via confocal microscope setup. A PL quenching of ~10-15 is
observed in correspondence of the SLG area, when compared to the SLG-free areas covered with QDs.
Figure 1c confirms the presence of QDs on graphene area, however, at magnified intensity scale.
We then characterize back-gated SLG field-effect transistors (FET) electrically during the QD excitation in
order to investigate the nature of the interaction between SLG and the QDs. The transfer characteristics Ids
vs. Vg of back-gated SLG field-effect transistors (FET) are shown in figure 2. The pristine SLG FET has its
neutrality point (VNP) at ~ 0V. The same SLG FET is then sensitized by spin casting the QD solution. The
transfer characteristics of the device are re-measured during excitation with laser of appropriate
wavelength. A shift of the neutrality voltage VNP from –1.9 V towards more negative voltages is observed
(VNP = –3.4 V), indicating that the electron accumulation in SLG is magnified by the interaction with the
charge released by the optically excited QDs. The band alignment between SLG and the QDs allows
electrons to be transferred by tunneling through the thin ZnS shell (figure 2b). The two conduction states
(corresponding to the laser ON/OFF states) can be cycled reproducibly.
Additionally, we demonstrate an efficient electron injection from graphene into CdSeZn or CdSe/ZnS
layered nanocrystalline structures and the operation of the corresponding graphene-QDs light emiting
diodes (LED). Typical structure of graphene-QDs LED device is shown in figure 3. A sandwich fabricated on
top of thin gold film (anode) consists of hole transport layer PEDOT:PSS, QDs layer and the single graphene
ABSTRACTS

layer, acting as cathode. In order to fabricate large-scale devices with active area of 1x1 mm2 we utilize
graphene layers synthesized via chemical vapor deposition (CVD) techniques. Graphene films are then
transferred to target sandwich structures by traditional PMMA transfer process. Our devices reveal rather
low threshold voltage of ~ 4.2 V and electroluminescence (EL) intensities up to ~300 cd/m2. We
demonstrate that the latter parameter can be increased dramatically by adjusting the work-function of
graphene electrode via molecular doping.
107
 References

[1] Klekachev, A.V., et al., Electron accumulation in graphene by interaction with optically excited quantum dots. Physica
E-Low-Dimensional Systems & Nanostructures, 2011. 43(5): p. 1046-1049.

Figures

Figure 1: (a) Optical image of a graphene flake exfoliated on a glass cover slip. (b) Photoluminescence image of the same
graphene flake after treatment with QDs. (c) Photoluminescence of individual QDs on the graphene in the area, selected
by blue rectangle under different intensity scale.

Figure.2: (a) Transfer characteristics of a SLG FET in pristine conditions, after QD deposition, and during QD excitation by a
laser light. The inset shows an optical microscope image of the device (scale bar: 2 µm). (b) Energy level diagram at the
interface of the graphene-QD system under study
ABSTRACTS

Figure.3: Schematic representation of graphene-QDs light emitting diode.

108
Graphene:
a new platform for capturing and manipulating light at the nanoscale

1 1 1 1
Frank Koppens , Gerasismos Konstantatos , Michela Badioli , Johann Osmond , Louis
1 1 1 1 1
Gaudreau , Maria Bernechea , Pelayo Garcia de Arquer , Fabio Gatti , Marko Spasenovic ,
2 2 2 2 3
Florian Huth , Jianing Chen , Pablo Alonso-González , Rainer Hillenbrand , Amaia Zurutuza ,
3 3 4 4
Alba Centeno , Amaia Pesquera , Suko Thongrattanasiri and Javier Garcia de Abajo
1
ICFO, The institute of photonic Sciences, Barcelona (Spain)
2
CIC nanoGUNE, San Sebastian
3
CNM-IMB, Barcelona and GREMAN, Tours
4
IQFR-CSIC, Madrid

The ability to manipulate optical fields and the energy flow of light is central to modern information and
communication technologies, as well as quantum information processing schemes. However, as photons
do not possess charge, controlling them efficiently by electrical means has so far proved elusive. A
promising way to achieve electric control of light could be through plasmon polaritons - coupled
excitations of photons and charge carriers – in graphene. In this two-dimensional sheet of carbon atoms, it
is expected that plasmon polaritons and their associated optical fields can be readily tuned electrically by
varying the graphene carrier density.

In the first part of this talk, I will discuss recent experiments revealing propagating optical plasmons in
tapered graphene nanostructures, using near-field scattering microscopy with infrared excitation light [1].
The plasmonic field profiles are visible in real-space images with nanometer resolution. We find that the
extracted plasmon wavelength is remarkably short - over 40 times smaller than the wavelength of
illumination. We exploit this strong optical field confinement to turn a graphene nanostructure into a
tunable resonant plasmonic cavity with extremely small mode volume [2]. The cavity resonance is
controlled in-situ by gating the graphene, and in particular, complete switching on and off of the plasmon
modes is demonstrated, thus paving the way towards graphene-based optical transistors. This successful
alliance between nanoelectronics and nano-optics enables the development of unprecedented active
subwavelength-scale optics and a plethora of novel nano-optoelectronic devices and functionalities, such
as tunable metamaterials, nanoscale optical processing and strongly enhanced light-matter interactions
for quantum devices and (bio)sensing applications.

The second part of the talk is devoted to a novel hybrid graphene-quantum dot photodetector [3] which
exhibits a gain mechanism that can generate multiple charge carriers from one incident photon. Strong
and tunable light absorption in the quantum-dot layer creates electric charges that are transferred to the
graphene, where they recirculate many times due to graphene's high charge mobility and long trapped-
charge lifetimes in the quantum-dot layer. We demonstrate a gain of 10^8 electrons per photon and a
record-high responsivity of 10^7 A/W. Our devices also benefits from gate-tunable sensitivity and speed,
spectral selectivity from the short-wavelength infrared to the visible, and compatibility with current circuit
ABSTRACTS

technologies.
109
 References

[1] J. Chen, M. Badioli, P. Alonso-González, S Thongrattanasiri, F Huth, J Osmond, M. Spasenović,
A. Centeno, A.

Pesquera, P. Godignon, A. Zurutuza, N. Camara, J. Garcia de Abajo, R. Hillenbrand, F. Koppens, “Optical nano-
imaging of gate-tuneable graphene plasmons”, arXiv 1202.4996 (2012)
[2] F. Koppens, D. Chang, J. García de Abajo, “Graphene Plasmonics: A Platform for Strong Light–Matter Interactions”,
Nano Letters 11, 3370–3377 (2011).

[3] G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, P. Garcia de Arquer, F. Gatti, F. Koppens, “Hybrid
graphene-quantum dot phototransistors with ultrahigh gain”, Nature Nanotechnology (in print). See also arXiv
1112.4730 (2011).
ABSTRACTS
110
Twisting Graphene Nanoribbons
into Carbon Nanotubes

1 1 1,2 2 1
Pekka Koskinen , Oleg O. Kit , Tuomas Tallinen , L. Mahadevan , Jussi Timonen
1
NanoScience Center, Department of Physics, University of Jyväskylä, 40014 Jyväskylä, Finland
2
School of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, MA 02138
pekka.koskinen@iki.fi

For the past 20 years carbon nanotubes have been tributed as "rolled up graphene," though no one ever
really did the rolling. Here we predict that, indeed, long and narrow graphene ribbons can be rolled into
carbon nanotubes by means of twisting.[1] As today carbon nanotubes, along with many other
nanomaterials, are made by atom-by-atom growth, the twisted proposal makes up a quite a different
nano-fabrication method. The basic idea, however, is simple and easily grasped: just twist the ends of a
strap of your backpack and watch the result (see figure). Therefore the mechanism, being classical in
origin, is robust and valid in macro-, micro-, and nano-scales. Mechanism also enables experimental
control, so it can be used to make carbon nanotubes controllably, to make various kinds of novel carbon
nanotubules, to encapsulate molecules inside tubes, or to make tubules from ribbons made of other
planar nanomaterials.

References

[1] O. O. Kit, T. Tallinen, L. Mahadevan, J. Timonen, and P. Koskinen, Phys. Rev. B (Editor's Suggestion) [in print] (2012)

Figures

Figure 1: Left: Snapshots from quantum simulation of a 24-Å wide zigzag graphene nanoribbon being twisted into a
pristine (9,3) carbon nanotube. Right: The concept of tube formation can be illustrated simply by twisting the ends of a
strap of a backpack.
ABSTRACTS
111
 Tailoring the properties of graphene, dichalcogenides and other 2D
materials through electron irradiation:
insight from DFT simulations and TEM experiments

1,2 1 2 3
Arkady V. Krasheninnikov, Hannu-Pekka Komsa, Natalia Berseneva, Simon Kurasch, Jani
1,4 1 3 4 2
Kotakoski, Ossi Lehtinen, Ute Kaiser, Jannik Meyer, Risto Nieminen
1
Department of Physics, University of Helsinki, P.O. Box 43, 00014 Helsinki, Finland
2
Department of Applied Physics, Aalto University, P.O. Box 1100, 00076 Aalto, Finland
3
Central Facility for Electron Microscopy, Group of Electron Microscopy of Materials Science, Ulm University, 89081 Ulm,
Germany
4
Department of Physics, University of Vienna, Boltzmanngasse 5, 1090 Wien, Austria
akrashen@acclab.helsinki.fi

Recent experiments on electron and ion bombardment of 2D materials demonstrate that irradiation can
have beneficial effects on such targets and that electron or ion beams can serve as tools to change the
morphology and tailor mechanical, electronic and even magnetic properties of low-dimensional materials.
In this presentation, our latest theoretical results on the response of graphene [1-2], h-BN [3] and several
dichalcogenides (MoS2, MoSe2, WS2, etc) [4] to irradiation will be presented, combined with the
experimental data obtained in collaboration with several groups.
Transformation of graphene to an amorphous 2D sheet (Fig. 1) by the beam of energetic electrons will be
discussed. It will be shown that bond rotations near vacancy-type defects (Fig.2) induced by energetic
electrons are the main mechanism of the transformation. We will further study the stability of graphene
ribbons under electron irradiation. It will be shown that the response of the ribbons to irradiation is not
determined by the equilibrium energetics as assumed in previous experiments, but by kinetic effects
associated with the dynamics of the edge atoms after impacts of energetic electrons, Fig.3. We will
demonstrate an unexpectedly high stability of armchair edges, comparable to that of pristine graphene,
and show that the electron energy should be below ∼50 keV to minimize the knock-on damage at the
edges. The electronic structure of graphene sheets with defects will be addressed as well, and possible
avenues for tailoring the electronic structure of graphene by irradiation-induced defects [5] and impurities
will be introduced.
We will also discuss how electron irradiation and electron beam-assisted deposition can be used for
engineering hybrid BN-C nanosystems by substituting B and N atoms with C atoms, Fig. 4. Using density-
functional theory static and dynamic calculations, we show that the substitution process is governed not
only by the response of such systems to irradiation, but also by the energetics of the atomic
configurations, especially when the system is electrically charged. We suggest using spatially localized
electron irradiation for making carbon islands and ribbons embedded into BN sheets.We further study the
magnetic and electronic properties of such hybrid nanostructures and show that triangular carbon islands
embedded into BN sheets possess magnetic moments, which can be switched on and off by electrically
charging the structure.
Finally, we present the results of firs-principles calculations [4] for displacement thresholds in various
dichalcogenides. We will further touch upon the most frequent defect structures which appear in these
ABSTRACTS

materials under electron irradiation and compare the calculated defect configurations to those found in
the transmission electron microscopy experiments [6]. Similar to h-BN, we explore how electron-beam-
assisted deposition can be used to change the atomic structure of dichalcogenides and tailor their
electronic properties through doping.
112
References

[1] J. Kotakoski, D. Santos-Cottin, and A. V. Krasheninnikov, ACS Nano 6 (2012) 671.

[2] J. Kotakoski, A. V. Krasheninnikov, U. Kaiser, and J.C. Meyer, Phys. Rev. Lett. 106 (2011) 105505.
[3] N. Berseneva, A. V. Krasheninnikov, and R.M. Nieminen, Phys. Rev. Lett. 107 (2011) 035501.
[4] H.-P. Komsa, J. Kotakoski, A. V. Krasheninnikov, to be published.
[5] F. Banhart, J. Kotakoski and A. V. Krasheninnikov, ACS Nano 5 (2011) 26.
[6] S. Kurasch, H.-P. Komsa, O. Lehtinen, A. V. Krasheninnikov, and U. Kaiser, to be published.

Figures

2
Figure 1: (a) Amorphous two-dimensional sp -bonded
carbon membrane created by a high-dose exposure of
graphene to 100 keV electron irradiation in an HRTEM.
Scale bar is 1 nm. (b) Fourier transforms from HRTEM
images of the initial graphene configuration and of the
amorphous 2D carbon (c). Courtesy of J.C. Meyer and U.
Kaiser.

Figure 2: Elementary defects and frequently observed defect transformations under irradiation. Atomic bonds are
superimposed on the defected areas in the bottom row. Creation of the defects can be explained by atom ejection and
reorganization of bonds via bond rotation. (a) Stone-Wales defect, (b) defect-free graphene, (c) single vacancy, (d)
Divacancy, (e) 555-777 divacancy, (f) 5555-6-7777 divacancy. Scale bar 1 nm. Courtesy of J.C. Meyer and U. Kaiser.

Figure 3: Different edge reconstructions as

optimized with DFT (a) and their formation
energies Ef and displacement thresholds Td
(b). Displacement thresholds as calculated
with both DFT and DFTB methods are
presented.

Figure 4: Schematic representation of the electron-beam-mediated

substitutional doping of boron nitride monolayer. Hydrocarbon
molecules decomposed by the beam provide carbon atoms which
preferentially take place of boron atoms displaced by the beam or due
ABSTRACTS

to beam-induced substitution reaction. (a) Irradiation of the whole

sample as done experimentally [X. Wei et al., ACS Nano 5, 29162922
(2011).] (b) Possible engineering of carbon island in BN matrix due to
focused electron beam. (c) Experimental TEM image of a triangular
hole formed in single BN sheet due to the electron beam [J. C. Meyer
et al., Nano Lett. 9, 2683 (2009)].
113
 Electronic properties of nitrogen doped graphene measured
at the atomic scale

1 2 1 2 2
Jérôme Lagoute , Frédéric Joucken , Yann Tison , Jacques Dumont , Damien Cabosart , Bing
3 1 1 1 1
Zheng , Vincent Repain , Cyril Chacon , Yann Girard , Sylvie Rousset , Andrés Rafael Botello-
3 2 3 2
Méndez , Robert Sporken , Jean-Christophe Charlier and Luc Henrard
1
Laboratoire Matériaux et Phénomènes Quantiques, UMR7162, Université Paris Diderot Paris 7, Sorbonne Paris Cité,
CNRS, UMR 7162 case courrier 7021, 75205 Paris 13, France
2
Research Center in Physics of Matter and Radiation (PMR), University of Namur (FUNDP),
61 Rue de Bruxelles, 5000 Namur, Belgium
3
Université Catholique de Louvain (UCL), Institute of Condensed Matter and Nanosciences (IMCN),
1/6 Place L. Pasteur, 1348 Louvain-la-Neuve, Belgium
jerome.lagoute@univ-paris-diderot.fr

Chemical doping is a promising strategy for tailoring the electronic properties of graphene. The
incorporation of nitrogen in the carbon lattice is a natural choice because of its suitable atomic radius and
additional electron. The substitution of some carbon atoms by nitrogen is expected to give rise to a shift of
the Dirac energy and an additional donor states. The local environment of the doping sites can also lead to
various effects in the graphene electronic structure [1]. Experimentally, the link between the local atomic
structure and electronic properties can be achieved using scanning tunneling microscopy (STM) and
spectroscopy (STS) by combining atomic scale imaging with local spectroscopy. Using STM/STS operating in
ultra high vacuum and at low temperature, we have investigated nitrogen doped graphene grown on
SiC(000-1). Substitutional nitrogen has been found to be the most common configuration observed
characterized by a specific triangular pattern similarly to the recently reported STM/STS study of N doped
graphene prepared by chemical vapor deposition on a copper substrate [2]. The spatial distribution of the
local density of states in high resolution images indicates a charge transfer between the nitrogen atom and
its neighboring carbon atoms. Local spectroscopy reveals that doping induces a shift of the Dirac energy as
expected for n-doping together with the formation of an additional localized state in the valence band.
This finding is in agreement with Density Functional Theory (DFT) calculations. Beside the observation of
single substitutional nitrogen atoms, various other atomic configurations have been observed revealing
different electronic properties.

References

[1] B. Zheng, P. Hermet, L Henrard, ACS Nano, 7 (2010) 4165

[2] L. Zhao et al., Science, 333 (2011) 999
ABSTRACTS
114
Disordered Fermi Liquid in Epitaxial Graphene from
Quantum Transport Measurements

Samuel Lara-Avila, Alexander Tzalenchuk, Sergey Kubatkin, Rositza Yakimova, T. J. B. M. Janssen,

Karin Cedergren, Tobias Bergsten, and Vladimir Fal’ko
Chalmers University of Technology, Kemivagen 9, Goteborg, Sweden
samuel.lara@chalmers.se

Epitaxial graphene synthesized on the Si-terminated face of silicon carbide (SiC/G) has demonstrated the
ability to supersede conventional semiconductors as the system of choice for fast analogue transistors,
quantum metrology, and is also emerging as a suitable platform for such disruptive technologies as
spintronics.

In SiC/G, the two dimensional system is formed by a conducting graphene layer situated on top of a non-
conducting buffer carbon layer, covalently bonded to SiC. The interplay between these two layers,
unavailable in graphene flakes, graphene on the C face of SiC or conventional semiconductor-based 2D
gases, makes SiC/G a system full of rich new physics. A detailed understanding of electron scattering and
localization in this material is therefore important.

We quantify the charge scattering in SiC/G by analyzing quantum corrections to conductivity from
magnetotransport measurements at low temperatures and decoupling the two quantum transport
phenomena contributing to effect: the Aronov-Altshuler electron-electron interaction (AA) and weak-
localization (WL). The analysis of the AA correction has confirmed that electrons in SiC/G display all the
attributes of a disordered Fermi liquid and that the electron-electron interaction is responsible for
dephasing in this system; from the analysis of WL has extract the characteristic times of symmetry-
breaking disorder and intervalley scattering, finding a characteristic phase relaxation time of electrons of
about 50 ps, which we attribute to the presence of local magnetic moments of defects in or under
graphene. Based on this, we conclude that spin memory of electrons in a field effect transistor based on
epitaxial graphene with n~1011 cm2 can exceed a micrometer scale, which proves the suitability of this
system for applications in spintronics

References

[1] S. Lara-Avila, A. Tzalenchuk, S. Kubatkin, R. Yakimova, T. J. B. M. Janssen, K. Cedergren, T. Bergsten, and V. Fal’ko,
Phys. Rev. Lett. 107, (2011), 166602.
ABSTRACTS
115
 Figures

Figure 1: Magnetotransport measurements in monolayer SiC/G. (a) Temperature dependence of the characteristic
scattering lengths and (b) decoherence rate for samples S1 (open markers) and S2 (solid markers). (c) Half-integer QHE
proving the monolayer nature of SiC/G. Inset: Micrograph of one of the devices. (d) Weak localization peak at different
temperatures.
ABSTRACTS
116
Tailoring the atomic structure and
electronic properties of graphene/metal interfaces by intercalation

1 1 1 1 2
Philipp Leicht , Konstantin Krausert , Lukas Zielke , Muriel Sicot , Florian Mittendorfer ,
2 2 3 3
Andreas Garhofer , Josef Redinger , Daniela Pacilé , Marco Papagno , Polina Makarovna
3 3 3 4 1
Sheverdyaeva , Paolo Moras , Carlo Carbone , Yuriy S. Dedkov and Mikhail Fonin
1
Fachbereich Physik, Universität Konstanz, 78457 Konstanz, Germany
2
Institute of Applied Physics, TU Vienna, and Center for Computational Materials Science,
Gusshausstrasse 25/134, A-1040 Wien, Austria
3
Instituto di Struttura della Materia, Consiglio Nazionale delle Ricerche, Trieste, Italy
4
SPECS Surface Nano Analysis GmbH, 13355 Berlin, Germany
philipp.leicht@uni-konstanz.de

The interface between graphene and the substrate plays a vital role for graphene based applications. It
influences the electronic properties concerning the position and form of the Dirac cone, furthermore spin-
filtering capabilities are predicted for magnetic substrates [1]. Apart from direct growth of graphene on a
small number of substrates, a variety of metals can be intercalated between graphene and the substrate
interface [2,3] and allow for the production of graphene on a large number of materials. In this work, we
present the investigation of Ni intercalation underneath graphene on Ir(111) and Rh(111). The atomic
structure and electronic properties were investigated for samples with intercalated Ni ranging from a
submonolayer to few monolayers.

For Ni intercalation underneath graphene/Ir(111), scanning tunneling microscopy shows large monolayer
thick areas of intercalated material accumulated at step edges. These areas show a strongly increased
moiré corrugation as well as a decreased average distance of graphene from Ni/Ir(111) compared to
Ir(111). The stronger corrugation in conjunction with considerable changes in the electronic structure
measured by the photoemission spectroscopy suggests an increased bonding between graphene and Ni.
The details of the atomic structure and electronic properties are discussed in the frame of recent DFT
calculations of graphene/Ni/Ir(111).

For Ni intercalation underneath graphene/Rh(111) [2], we observe the formation of epitaxial nanoislands
underneath graphene, which are scattered across the substrate terraces. The size and shape of
nanoislands is strongly influenced by the local spatial variation of the graphene-Rh bonding strength
involving size selection according to the moiré periodicity. Here, no considerable changes in bonding
strength are observed as compared to graphene/Ni/Ir(111).

In both systems, we identify the intercalation paths to be via diffusion through either pre-existing defects
in graphene, or metal-generated defects followed by the defect healing of the graphene lattice. For
intercalation of Ni underneath graphene/Ir(111) large patches of material, often in the vicinity of step
edges, are found and suggest long diffusion lengths of material at the interface of graphene and Ir(111)
This is not the case for graphene/Ni/Rh(111), where the strongly bound bridge sites act as diffusion
ABSTRACTS

barriers. Similar diffusion barriers can be achieved after intercalation of more than one monolayer of Ni.
117
 References

[1] Karpan, V.; Giovannetti, G.; Khomyakov, P.; Talanana, M.; Starikov, A.; Zwierzycki, M.; van den Brink, J.; Brocks, G.;
Kelly, P.; Phys. Rev. Lett. 99 (2007) 176602
[2] Sicot, M.; Leicht, P.; Zusan, A.; Bouvron, S.; Zander, O.; Weser, M.; Dedkov, Y. S.; Horn, K.; Fonin, M.; ACS Nano 6
(2012) 151
[3] Huang, L.; Pan, Y.; Pan, L.; Gao, M.; Xu, W.; Que, Y.; Zhou, H.; Wang, Y.; Du, S.; Gao, H.-J.; Appl. Phys. Lett. 99 (2011)
163107

Figures

Figure 1: (a) STM topograph of intercalated Ni underneath graphene/Ir(111). Intercalated material shows increased moiré
corrugation and accumulates at step edges. (b) STM topograph of intercalated Ni underneath graphene/Rh(111). Strongly
bound areas of the graphene/Rh(111) moiré cell act as diffusion barriers for material, eventually forming intercalated
islands with size-selection.
ABSTRACTS
118
Simulation of electronic transport in defective graphene.
From point defects to amorphous structures

1,2 3,4 1,5 1,2

Aurelien Lherbier , Stephan Roche , Simon M.-M. Dubois , Xavier Declerck , Oscar. A.
6 6 7 1,2
Restrepo , Arnaud Delcorte , Yann-Michel Niquet , and Jean-Christophe Charlier
1
Universite catholique de Louvain (UCL), Institute of Condensed Matter and Nanoscience (IMCN), NAPS, Chemin des
etoiles 8, 1348 Louvain-la-Neuve, Belgium
2
European Theoretical Spectroscopy Facility (ETSF)
3
CIN2 (ICN-CSIC) and Universitat Autonoma de Barcelona (UAB), Catalan Institute of Nanotechnology, Campus UAB,
08193 Bellatera (Barcelona), Spain
4
Institucio Catalana de Recerca i Estudis Avancats (ICREA), 08070 Barcelona, Spain
5
University of Cambridge, Cavendish Laboratory, Theory of Condensed Matter group, JJ Thomson Avenue, Cambridge CB3
0HE, United-Kingdom
6
Universite catholique de Louvain (UCL), Institute of Condensed Matter and Nanoscience (IMCN), BSMA, Place Croix du
Sud 1, 1348 Louvain-la-Neuve, Belgium
7
CEA-UJF, INAC, SP2M/L_Sim, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
aurelien.lherbier@uclouvain.be

Graphene, a one atom-thick membrane, has sparked out intense research activities from both
experimental and theoretical sides since almost a decade now. The striking properties of graphene in
various fields, such as mechanical, thermal, or electronic transport properties, are intrinsically related to
its two-dimensional aspect and to its honeycomb lattice structure yielding both to the peculiar electronics
of Dirac Fermions. From the electronic transport point of view, clean graphene samples exhibit particularly
long coherence length and high electronic mobility both interesting for devices applications in
nanoelecronics. Graphene provide simultaneously is genuine playground for fundamental researches such
as exploration of Anderson (anti-)localization phenomena in real two-dimensional systems.

In this presentation, simulations of electronic transport in defective graphene membranes are exposed.
Employing tight-binding models validated by ab initio calculations, and using a real-space order-N Kubo-
Greenwood transport method [1-2], the effect of structural defects disrupting the ideal honeycomb lattice
is theoretically investigated. The case of various concentrations of “point defects” or single structural
defects such as vacancies and Stone-Wales defects is first studied (Fig.1). Then, electronic and transport
properties in the presence of a mixture of different structural defects is examined. Finally, using molecular
dynamics simulations, highly defective graphene membranes presenting domains of amorphous graphene
structure [3-5] are created (Fig.2), and their transport properties are carefully inspected. Structural defects
are found to induce strong resonant scattering states at different energies depending on the nature and
the concentration of defects [6-8]. These induced resonant scattering states can yield to extremely short
mean free paths and low mobilities. At low temperatures, they also lead to an enhanced contribution of
quantum interferences driving to localization phenomena in the quantum transport regime. In case of
highly defective graphene membrane, the amorphization of the structure changes the system into a strong
two-dimensional Anderson insulator material [9], which could be experimentally confirmed by the
observation of a variable range hopping transport behavior at low temperatures.
ABSTRACTS
119
 References

[1] S. Roche, D. Mayou, Phys. Rev. Lett. 79 (1997) 2518

[2] A. Lherbier, X. Blase, Y.M. Niquet, F. Triozon, S. Roche, Phys. Rev. Lett 101 (2008) 036808
[3] J. Kotakoski, A.V. Krasheninnikov, U. Kaiser, J.C. Meyer, Phys. Rev. Lett 106 (2011) 105505
[4] V. Kapko, D.A. Drabold, M.F. Thorpe, Phys. Status Solidi B 247 (2010) 1197
[5] E. Holmström, J. Fransson, O. Eriksson, R. Lizárraga, B. Sanyal, S. Bhandary, M.I. Katsnelson, Phys. Rev. B 84 (2011)
205414
[6] T.O. Wehling, S. Yuan, A.I. Lichtenstein, A.K. Geim, M.I. Katsnelson, Phys. Rev. Lett. 105 (2010) 056802
[7] Y.V. Skrypnyk, V.M. Loktev, Phys. Rev. B 82 (2010) 085436
[8] A. Lherbier, S.M.-M. Dubois, X. Declerck, S. Roche, Y.M. Niquet, J.-C. Charlier, Phys. Rev. Lett. 106 (2011) 046803
[9] A. Lherbier, S. Roche, O.A. Restrepo, Y.M. Niquet, A. Delcorte, J.-C. Charlier, submitted for publication (2012).

Figures

Figure 1: Three structural defects in graphene: (a) Stone-Wales, (b) Divacancy 585, and (c) Divacancy 555-777

Figure 2: Highly defective graphene (HDG) membrane: (a) Randomized graphene sample, (b) Structurally optimized model
of HDG, (c) short list of frequently observed structural defects.
ABSTRACTS
120
Cheap competitors of graphene -the actual use of carbon black and
carbon fibres in the automotive and consumer industry

Renato Liardo
Volvo Group Trucks Technology – Advanced Technology & Research; Materials Technology
402 Av Charles de Gaulle, API: VNX AB1 1 02 - Gare 28, 69635, Vénissieux - France

renato.liardo@volvo.com
www.volvogroup.com

Carbon black is one of the oldest products known. Its manufacturing process has seen improvements over
the centuries. For which applications is carbon black used? The main characteristics that CB can provide
are: colour, gloss, UV protection, fade resistance, heat protection, reinforcement, rheology control,
electrical conductivity, thermal conductivity, reducing agent. Markets for the carbon black are mainly:
rubbers, plastics, coatings, adhesives and sealants, printing inks, toners in industries as automotive,
aerospace, marine, construction, packaging, electronics, cables for power transport and
telecommunication, pipes for transport of water or gas, fibres for clothing and carpets.

Carbon fibres were developed at the end of the 1950’s, and today are very popular. Their atomic structure
is similar to that of graphite. Why do we add carbon fibres to an application? To provide lightweight, high
stiffness, high tensile strength, high fatigue resistance, high temperature resistance, low thermal
expansion, high chemical inertness, low abrasion, good vibration damping, electrical conductivity,
biological inertness, x-ray permeability, self-lubrication. Markets for the carbon fibres are mainly:
aerospace, road and marine transports, sporting goods, missiles, aircraft brakes, loudspeakers for Hi-fi,
medical prostheses, surgery and x-ray equipment, implants, tendon/ligament repair, textile machinery,
chemical industry, nuclear field.

This talk will give a "broad view" on the actual uses and issues on what can be considered as ready
commercial alternative materials to graphene: carbon black and carbon fibres.

ABSTRACTS
121
 In Situ Real-Time Monitoring of interfacial Chemical-Electrical-Optical
Phenomena in CVD-Graphene/Metal Hybrids

1 1 2 2 2
Maria Losurdo , Maria M. Giangregorio , Wenyuan Jiao , Evonne Yi , Tong-Ho Kim ,
3 2 1
Iris Bergmair , April Brown and Giovanni Bruno
1
Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari, Italy
2
Electrical Computer Engineering Department, Duke University, 27708 Durham, North Carolina, US
3
Instituto di Struttura della Materia, Consiglio Nazionale delle Ricerche, Trieste, Italy
4
Profactor GmbH, Im Stadtgut A2 | 4407 Steyr-Gleink | Austria
maria.losurdo@ba.imip.cnr.it

As engineering applications of graphene attract increasing interest, we need in situ methods enabling real-
time control of graphene growth in order to control its thickness and to tailor properties, as well as
enhancing understanding interfacial phenomena involving graphene interactions with metals in hybrid
devices. Among various synthesis approaches, chemical vapor deposition (CVD) has emerged as a reliable
technological process for fabricating large area graphene.
The scope of this contribution is to highlight experimental achievements obtained using real-time optical
metrology with spectroscopic ellipsometry on the CVD growth of graphene, and its interactions with
metals.
Specifically, we show
• Improvements in the properties of graphene achieved by optimizing CVD growth and establishing
correlations between process kinetics and thickness. We have (i) demonstrated a real-time optical
probing method to monitor and relate all steps involved in graphene growth by CVD (using CH4-H2)
with its final thickness and quality; (ii) demonstrated a novel improved low-temperature H2 plasma
process for the cleaning and crystallization of the metal catalysts Ni and Cu, to improve substrate
quality and reduce the impact of grain boundaries effects on graphene properties; (iii) characterized
carbon diffusion kinetics when CH4 in injected into the CVD system and demonstrated control of
graphene thickness [Figure 1]; (iv) measured and articulated the impact of the H2/CH4 ratio on CVD
growth kinetics, graphene thickness and structural and optical properties [Figure 2]. The quality of the
synthesized graphene is revealed by the perfect Lorentzian fit of the 2D peak at 2702 cm-1 with FWHM
of approximately 33 cm-1. The absence of the Raman D peak at 1350 cm-1 indicates the absence of
defects. Furthermore, microscopy indicates a good uniform thickness coverage, which from the I2D/IG
Raman ratio, can be estimated to be from a monolayer to a 3-layers depending on growth conditions.
• New opportunities for the facile design of plasmonic graphene/metal systems based on charge
transfer. Charge transfer is crucial for characterizing metal/graphene interfaces and understanding a
wide range of light-matter interactions and devices, such as plasmon-coupling across the materials
components and plasmon-electron coupling in plasmaron-based devices. In addition, metals on
graphene allow the controlled modification of the Fermi energy across the system, enabling effective
graphene doping. Here, we provide for the first time the direct evidence of the tunability of the
plasmon resonance of graphene coupled to plasmonic metal nanoparticles (NPs) [Figure 3]. The novel
Ga NP/graphene system is an excellent model of a weakly-bound metal-graphene interface thus
preserving graphene electronic structure. Unlike transition metals, Ga (gallium) is a sp metal yielding a
ABSTRACTS

predominantly ionic interaction with graphene, i.e. without strong hybridization between the pz
orbitals of graphene and the valence electrons of Ga, and with a weak bonding charge yielding
minimal distortion of the graphene lattice. Furthermore, graphene/Ga NPs offer a plasmonic system
with broad surface resonance tunability, from the UV to the near-IR range, enabling coupling of the
plasmon resonance with graphene UV absorption at 4.6 eV and its intrinsic π plasmon. The role of
graphene in the charge transfer, between the metal NPs and the substrate, on the plasmon resonance
122
 energy and amplitude is discussed also in comparison with other metals such as silver (Ag) that
interacts electronically much more strongly with graphene
• Improvements in graphene/Ag system stability. The interface chemistry and electronic phenomena
underpinning the coupling of graphene with silver gratings and fishnet structures enable novel
realizations of hybrid functional materials, which are oxidation resistant and possess stable plasmon
resonances in the visible range. A chemical model based on the electron transfer from graphene to
silver is articulated to rationalize the oxidation resistance behavior of silver/graphene structures and
the new chemical/optical properties of the hybrid [Figure 4].
These results on graphene/metals have significant impact on a variety of fields, including optical
metrology, SERS-based sensors, renewable energy, plasmonics, metamaterials, specifically through the
development of novel graphene/silver composites.
We acknowledge funding of the FP7 European project NIM-NIL (GA 228637) www.nimnil.org
References

[1] M. Losurdo et al. Phys. Chem. Chem. Phys., 13 (2011) 20836.

[2] M. Losurdo et al. J. Phys. Chem. C. 115 (2011) 21804.
[3] M. Losurdo et al. Small (2012).

Figures
Figure 1: Correlation between real time monitoring of
graphene CVD growth and final graphene quality. (a) Real-
time evolution of extinction coefficient, <k>, monitored
during annealing of the 300 nm Ni/300 nm SiO2/Si substrate
in H2. (b) Corresponding AFM images recorded for the three
Ni substrates annealed at different temperature. (c) Real-
time <k> evolution during graphene growth on the three
characteristics Ni substrates. (d) Raman 100 μmx100 μm
maps of the I2D/IG intensity ratio for FLG samples
corresponding to the various kinetics and (e) Raman spectra
acquired in characteristic points indicated by the yellow dot.
Blue region corresponds to monolayer-graphene; green
region to 2-3 layers graphene and light green to >3 layers
graphene [1].

Figure 2: Impact of CH4-H2 ratio on graphene growth on Ni and Cu.

(a) Real-time evolution of <ε1> monitored during graphene growth
on Cu at various CH4/H2 ratios. The Raman spectra for 2 samples are
also shown with explicit I2D/IG ratio, indicative of the graphene
thickness, and IG/ID ratio, indicative of defects. (b) Typical Raman
spectrum for graphene grown on Ni at CH4:H2=100:10; no D-peak is
observed; the dependence of the 2D peak intensity and FWHM, as a
function of increasing H2 for graphene on Ni is also shown [2].
ABSTRACTS

Figure 3: Plasmon Resonance for Ga NPs/graphene
plasmonic hybrids. Real-time evolution of the extinction
coefficient spectra of the plasmon resonance for plasmonic
Ga nanoparticles/graphene [3].
Figure 4: Graphene-Silver Metamaterials. AFM and SEM views
of a graphene-silver metamaterials in the visible. XPS shows
that advantage of graphene is preserving the metal Ag
structure after 1 month of air exposure.
123
 Collective properties of Dirac electrons
in graphene

1,2
Yu. E. Lozovik
1
Institute of Spectroscopy, 142190 Troitsk, Moscow region, Russia
2
Moscow Institute of Physics and Technology, 141700, Dolgoprudny, Moscow region,Russia
lozovik@isan.troitsk.ru

Graphene, a two-dimensional form of carbon with honeycomb lattice, has attracted a lot of attention of
condensed-matter community due to its unique properties [1-3]. In the present talk we consider new phases
and collective properties of graphene structures. We discuss also various applications of graphene as a
constituents for for the elements of plasmonics, nanophotonics and photonic crystals. Electron-hole pairing
caused by Coulomb interaction in the system of independently gated graphene layers separated by dielectric
barrier is discussed. The theory of Cooper pairing of massless spatially separated Dirac electrons and holes at
strong coupling in graphene bilayer is presented. Similarity and distinction from phenomena in semiconductor
coupled quantum wells (see [4] and cit.lit.) will be discussed. The essential distinctions are due to Berry phase
of electronic wave functions and different screening properties. Localized electron-hole pairs (at zero
magnetic fields) are absent in graphene, thus the behavior of the system versus coupling strength is cardinally
different from usual BCS-BEC crossover. Various factors, leading to enlargement of the critical temperature at
strong coupling beyond Bardeen-Cooper-Schrieffer model predictions, are considered. These important
factors are multi-band character of the pairing, dynamical and correlation effects [5-8].
The collective properties of different types of quasiparticles in graphene is considered - 2D spatially indirect
magnetoexcitons in two-layer graphene, magnetoexcitonic polaritons (magnetopolaritons) in a graphene
layer embedded in an optical microcavity in a strong magnetic field (see also [4, 9-13] and cit.lit.). We predict
Bose-Einstein condensation (BEC), Kosterlitz-Thouless transition and superfluidity of indirect magnetoexcitons
and magnetoexcitonic polaritons in a strong magnetic field. Strongly correlated phases of of magnetoexcitons
in bilayer graphene is predicted. The e-h condensation in coupled graphene sheets can be observed through
essential rise of e-h drag, Josephson-like phenomena etc. The quasi-equilibrium system of magnetoexciton
polaritons, quantum superposition of optical microcavity photons and magnetoexcitons in embedded
graphene is considered. Fixation of relative phase of two order parameters corresponding to exciton and
cavity photons is analyzed. The transition temperature to superfluid state of cavity magnetopolaritons was
found as the function of exciton-photon detuning and Rabi splitting. Excitations in the system are discussed.
Magnetopolaritons, quantum superposition of optical microcavity photons and magnetoexcitons in graphene
(embedded in optical microcavity) are studied. Coherent state of magnetopolariton system is considered .
Different 2D traps for cavity polaritons are analyzed(see also [4] and cit.lit.). The systems considered give the
possibility to create nondissipative nanoelements for information transfer operating even at room
temperatures.
We consider disorder effect on electron–hole pairing in the system. The influence of charged impurities on
temperature of phase transition is studied. The quantum hydrodynamics of the system is considered and
phase stiffness of electron–hole condensate and temperature of Berezinskii–Kosterlitz–Thouless transition to
the superfluid state are calculated.
Dependence of critical temperate on mismatch of Fermi lines of e and h and value of triagonal warping of
their spectrum is obtained. We predict appearance of the ground state with finite value of Cooper pair
ABSTRACTS

momentum at mismatch of the Fermi lines above the critical value. We show that spatial structure of the
order parameter in this state can be reconstructed from the dependence of tunnel current between the
layers on value and direction of parallel magnetic field.
Collective properties and coherent phases of graphene structures in high magnetic fields are discussed.
Instabilities in the system, particularly, coherent state formation originated from composite fermions pairing
124
are analyzed. Drag effects in graphene structures are considered. The similarity and dissimilarity in properties
of Dirac electron system, particularly their collective properties in graphene vs. 3D topological insulators are
discussed. The method of calculations of nanoelements based on graphene by generalized density functional
approach for system with “ultrarelativistic” electronic spectra are developed.
The electromagnetic response of a composite medium consisting of monolayer graphene particularly
graphene based photonic crystals are discussed (see also [14]). The advantages of the graphene-based
photonic crystal are discussed. Plasma oscillations, plasmon polaritons and instabilities in graphene ,
graphene array and in surface of 3D topological insulator are discussed. Phonons and possible
superconductivity in strongly doped graphene are analyzed. Possible NEMS based on graphene are analyzed
(see also [15-18]).
Plasmon polaritons in a monolayer and bilayer doped graphene embedded in optical microcavity are
discussed. The dispersion law for lower and upper cavity plasmon polaritons was obtained. Peculiarities of
Rabi splitting for the system are analyzed; particularly, role of Dirac-like spinor (envelope) wave functions in
graphene and corresponding angle factors were considered. Typical Rabi frequencies and frequencies of
polaritons near polariton gap were estimated. The condition of existence of the lower pair of polaritons in the
bilayer graphene system (corresponding to the antiphase plasmon mode) was obtained. The collective
excitations in a helical electron liquid on a surface of three-dimensional topological insulator were studied.
Analogies with Dirac electron gas in graphene are discussed.
The plasmon polaritons in the system can be used for high-speed information transfer in the THz region.
The influence of the optical contrast between the two media, located on opposite sides of graphene on the
behavior of electromagnetic waves with TE and TM polarization is studied. It occurs that TE-polarized waves
becomes leaky due to the increase of the optical contrast. In the case under consideration TE-mode frequency
lies only in the window determined by the contrast. Analytical expressions describing the frequency range and
extent of leakage depending on the contrast are obtained. The different characteristics of leaky modes - the
wave vector, phase and group velocities, the characteristic length of leakage - are studied in detail. The
sensitivity of TE-modes to changes in contrast is estimated. Near the frequency where the imaginary part of
the conductivity of graphene vanishes, the very high sensitivity and very low detection limit are found. The
effect considered can be used for design of highly sensitive optical sensors based on graphene. It is expected
that they can essentially outperform modern plasmon resonance sensors. The influence of metamaterial
substrate on the TE-polarized electromagnetic waves in graphene is studied.
References
[1] K. Geim, K. S. Novoselov, Nature Materials 6, 183 (2007).
[2] M.Katsnelson , Materials Today 10, 20 (2007).
[3] Castro Neto AH, Guinea F, Peres NMR, Novoselov KS, Geim AK,Rev. Mod. Phys. 81 109 (2009)
[4] Yu.E.Lozovik, Physics-Uspekhi, 52, 286 (2009).
[5] Yu.E. Lozovik, A.A. Sokolik, JETP Lett., 87, 55(2008); Physics-Uspekhi, 51, No.7, pp. 727-748 (2008). Phys. Lett. A 374,
326(2009). Eur. Phys. J. B 73, 195 (2010); Phys. Lett. A 374, 2785 (2010).
[6] Yu.E. Lozovik, S.Ogarkov, A.A.Sokolik, Philosophical Transactions of the Royal Society A, Special Issue on “Graphene” 368,
5417-5429 (2010).
[7] Efimkin D. K, Lozovik Yu. E., J. Exp.Theor.Phys.113, 880 (2011).
[8] Efimkin D. K., Kulbachinskii V. A., Lozovik Yu. E.,JETP Lett., 93, 219 (2011).
[9] O. L. Berman, Yu. E. Lozovik, G. Gumbs, Phys. Rev. B 77, 155433 (2008); Phys.Rev.,B 78, 085401(2008).
[10] O. L. Berman, R. Ya. Kezerashvili, and Yu. E. Lozovik, Phys. Rev. B 78, 035135 (2008); Phys. Rev. B 80, 115302 (2009);
Nanotechnology 21, 134019 (2010).
[11] Yu.E. Lozovik, A.A. Sokolik, M. Willander, Physica Status Solidi A 206, 927-930 (2009).
[12] O. L. Berman, R.Ya. Kezerashvili, Yu.E. Lozovik, and D.W. Snoke, Philosophical Transactions of the Royal Society A, Special Issue
on “Graphene” 368, 5459–5482 (2010).
ABSTRACTS

[13] O.L. Berman, R.Ya. Kezerashvili, Yu.E. Lozovik , D.W. Snoke, R. Balili , B. Nelsen, L. Pfeiffer, K. West, Superlattices and
Microstructures 49 , No.3, 331–336 (2011).
[14] O.L. Berman, V.S. Boyko, R.Ya. Kezerashvili, A.A.Kolesnikov, Yu.E.Lozovik, Phys. Lett. A374, 3681-3684(2010).
[15] I.V. Lebedeva, A.A. Knizhnik, A.M. Popov, O.V. Ershova, Yu.E. Lozovik, B.V. Potapkin, Phys. Rev. B 82(15) 155460 (2010).
[16] I.V. Lebedeva, A.A. Knizhnik, A.M. Popov, Yu.E. Lozovik, B.V.Potapkin, Phys. Chem. Chem. Phys 13, 5687-5695 (2011).
[17] A.M. Popov, I. V. Lebedeva, A.A. Knizhnik, Yu.E. Lozovik, B.V. Potapkin, Phys.Rev.B 84, 045404 (2011).
[18] A.M. Popov, I.V. Lebedeva, A.A. Knizhnik, Yu.E. Lozovik, B.V. Potapkin, Phys.Rev.,B 84, 245437 (2011).
125
 Near term commercial opportunities
and applications of graphene

Christy Martin
Vorbeck Materials Corp, 8306 Patuxent Range Rd, Unit 105, Jessup, MD 20794, USA
christy.martin@vorbeck.com

Vorbeck Materials Corp. is a technology company established in 2006 to manufacture and develop
applications using Vor-x™, Vorbeck's patented graphene material developed at Princeton University.
Vorbeck launched the world’s first commercial graphene product in 2009 with the introduction of Vor-
ink™, a graphene-based conductive ink. Vor-ink™ formulations harness the exceptional conductivity of
graphene into ultra-flexible and robust inks and coatings for the printed electronics market. Designed for
operation on standard graphic printing presses without the need for specialized equipment, Vor-ink™ has
successfully run on commercial presses at speeds up to 150 m/min. Vor-ink™ is currently being used in a
range of consumer applications from printed circuits to sensors and goods using Vor-ink™ circuits are on
the shelves in major retailers today.

In conjunction with the Pacific Northwest National Labs (PNNL) and Princeton University, Vorbeck has also
developed Vor-charge™, a fully formulated anode composite next-generation battery electrode material,
which entered beta testing with commercial partners in 2010. The team is also developing next generation
lithium batteries, including lithium-sulfur and lithium-air systems and is working to rapidly bring this new
technology to market. Vorbeck is partnering with Hardwire LLC to integrate the new batteries into hybrid
military vehicles and is collaborating with companies to incorporate the new technology in toys, tools, and
commercial vehicles.

We will discuss the latest technical advancements in our Vor-ink™ materials and their role in enabling
(through improved performance, reduced cost, and simplified processing) item-level applications to high-
volume consumer goods. Updates on energy storage products and composite materials will also be
discussed.
ABSTRACTS
126
Graphene Electrodes For Nano-LEDs

Javier Martinez, A. Bosca, A. Bengoenchea-Encabo, S. Albert, M. A. Sanchez-Garcia, E. Calleja, F. Calle

ISOM Instituto de Sistemas Optoelectrónicos y Microtecnología, E.T.S.I.Telecomunicación,
Universidad Politécnica de Madrid, 28040 Madrid, Spain

javier.martinez@isom.upm.es

III- Nitride nanocolumns (III-N NCs) are the subject of intense research since the past decade because of
their unique properties and potential electronic and optoelectronic applications. NCs are usually grown on
Si(111), Si (100), SiC, and sapphire substrates by a self-assembly process using plasma-assisted molecular
beam epitaxy [1-3]. Unlike continuous layers, NCs accommodate the lattice-mismatch with the substrate
through a network of misfit dislocations localized at the hetero-interface. Therefore, they grow fully
relaxed and free of extended defects such as basal plane stacking faults or threading dislocations. This fact
makes III-N NCs excellent candidates to develop arrays of highly efficient nanolight-emitters in the
infrared-visible-ultraviolet range. Finally, the efficiency of a nanolight emitter will be increased if the NCs
are aligned in a periodic pattern.

Normally the transparent conducting electrode used for the light emitting diodes (LEDs) is the indium tin
oxide (ITO), but this material has a high cost and is instable in the presence of acids or bases and has poor
transparency in the blue and near-infrared light ranges [4]. Furthermore the need for a substitute for ITO
is ever increasing due to the limited availability of indium on earth [5]. Graphene is the ideal candidate in
order to replace the ITO due to its excellent electrical, optical and mechanical properties. So in this work
we used graphene as a transparent electrode to fabricate the nanoLEDs.

In our approach, we decided to use a focus ion beam system (ionLine from Raith, Germany) in order to
create the nanostructures (see Fig. 1). This technique will pattern our substrate in only one step and with
high precision in the periodicity due to the laser interferometric stage. The sample used was a 2 inch wafer
of GaN over a sapphire substrate (Lumilog, France). A thin layer of 7 nm of Ti was deposit on top. The
metal layer was patterning by the ionLine with holes of 100 nm and a pitch of 250 nm in writing fields of
50 μm. A matrix of 64 elements was fabricated covering an area of 400 μm2. After this one step process,
the sample was inserted inside a plasma assisted MBE in order to grow the NCs. With different conditions
one can create NCs with diverse doping (n or p) creating nanoLEDs. These devices are coated with a layer
of SiO2 as isolator. Finally, on top we deposit a layer of graphene as transparent electrode. The electrical
characterization of the devices was made with AFM and with a probe station with a semiconductor
analyzer. In figure 2, one can observe different steps in the fabrication of the nanoLED: AFM image of the
nanoholes created by the ion beam system, SEM image of the nanoLEDs grow in the MBE system and I/V
curve obtained in this device.

In conclusion, we propose the use of a graphene layer as a transparent electrode for GaN nanoLEDs. The
ABSTRACTS

electrical conductivity is higher than with ITO and its flexibility makes it the best material for contacting all
the nanocolumns.
127
 References

[1] M. Yoshizawa, A. Kikuchi, M. Mori, N. Fujita, K. Kishino, Jpn. J. Appl. Phys. 36 (1997) L459.
[2] M. A. Sanchez-Garcia, E. Calleja, E. Monroy, F. J. Sanchez, F. Calle, E. Muñoz , R. Beresford, J. Cryst. Growth 183
(1998) 23.
[3] L. Cerrutti, J. Ristic, S. Fernandez-Garrido, E. Calleja, A. Trampert, K. H. Ploog, S. Lazic, J. M. Calleja, Appl. Phys. Lett.
88 (2006) 213114.
[4] G. Jo, M. Choe, C. Y. Cho, J. H. Kim, W. Park, S. Lee, W. K. Hong, T. W. Kim, S. J. Park, B. H. Hong, Y. H. Kahng, T. Lee,
Nanotechnology 21 (2010) 175201.
[5] H. Park, J. A. Rowehl, K. K. Kim, V. Bulovic, J. Kong, Nanotechnology 21 (2010) 505204.

Figures

Figure 1: Fabrication scheme of the GaN nanoLEDs. A Titanium thin metal layer is deposited along the wafer with an e-
beam evaporator. In a second step, a metal layer is patterned with an ion beam equipment in order to create nano-holes
arrays. In a third step, the sample in inserted in a MBE system and the nanoleds grow inside the patterned areas. Finally,
is deposit a layer of SiO2 and on top a graphene layer as electrode.

Figure.2: AFM image of the nano-patterned holes on the Ti metal layer.SEM image of the selective area growth of GaN
NCs by PA-MBE. Electrical characterization of the nanoLEDs.
ABSTRACTS
128
Large crystalline graphene oxide sheets from
helical ribbon carbon nanofibres

1 1 2 2 2
C. Merino , P. Merino , H. Varela-Rizo , I. Rodriguez-Pastor , I. Martín-Gullón
GRAnPH Nanotech
1
Grupo Antolin Ingenieria, SA. Ctra. Madrid –Irún, km. 244.8, E09007 Burgos, Spain
2
Chemical Engineering Department, University of Alicante, 03080 Alicante, Spain

cesar.merino@granphnanotech.com

Among the different methods that are currently known to obtain graphene, the chemical methods
through the intercalation compounds of acids or/and oxysalts yielding graphite oxide, seems to be, at the
moment, the most promising technique to produce large quantities and thus supply the increasing
demand on graphene products. Commonly, natural graphite is used as a raw material[1], The subsequent
exfoliation of the intermediate graphite oxide produces, more precisely, graphene oxide, by definition
single layer or up 10 stacking layers. As graphite is composed by hundreds or thousands of graphene
layers, complete separation of all the layers is difficult and therefore the yield in graphene oxide sheets
becomes low. Other approaches have been use carbon nanotubes (CNT), which are also a graphitic
material, with less number of graphene layers [2]. Considering these examples, we use helical ribbon
carbon nanofibers (HR-CNF) to produce graphene oxide sheets.

The HR-CNFs are CVD-produced by Grupo Antolin (Burgos, Spain) by the floating catalyst method at
industrial scale, in a continuous process. Structurally, these filaments have a wide hollow core and a highly
graphitic structure, which is formed by a ribbon rolled along the fiber axis developing a continuous spiral.
This ribbon is composed of around 5 stacked graphene layers and this is the key point of our production
method, the structure of the CNFs is rolled graphene that has to be unzipped.

The production method consist of two steps, in the first step, the CNFs are unzipped by chemical oxidation
with a modified Hummers reaction [3, 4], in the second step the layers of the obtained graphene oxide are
even more separated and exfoliated by ultrasonication.

Characterization of this material seems to disagree when analyzing the bulk and just one graphene oxide
layer. X Ray Photoelectron Spectroscopy (XPS) shows a high content of oxygen, while electron energy loss
spectroscopy (EELS) analysis performed in one layer shows a much less oxidized material. Interestingly,
both analysis detect N in the structure, thus the graphene oxide sheets are presumably N-doped. The
single layer of graphene oxide was also analyzed by Raman spectroscopy, so the contributions of the sp2
and sp3 C domains are certainly these corresponding to just one layer.

This graphene oxide was introduced in an epoxy matrix [5]. The combination of O and N present groups in
the structure of the graphene oxide resulted in impressive improvements in the fracture toughness and
the fatigue life of the G-O/epoxy nanocomposites.
ABSTRACTS
129
 References

[1] Stankovich S, Dikin DA, Piner RD, Kohlhaas KA, Kleinhammes A, Jia Y, Wu Y, Nguyen ST, Ruoff RS, Carbon, 7 (2007)
1558-65.
[2] Kosynkin DV, Higginbotham AL, Sinitskii A, Lomeda JR, Dimiev A, Price BK, Tour JM, Nature, 7240 (2009) 872-76.
[3] Hummers W, Offeman R, J Am Chem Soc,(1958) 1339.
[4] Varela-rizo H, Rodriguez-pastor I, Merino C, Terrones M, Martin-gullon I, J Mater Res, 20 (2011) 2632-41
[5] Bortz DR, Heras EG, Martin-Gullon I, Macromolecules,(2011).

Figures

Figure 1: TEM images of: A) HR-CNF; B) evidence of the spiral structure of the HR-CNFs with a scheme of the structure; C)
single layer graphene oxide obtained from the HR-CNFs
ABSTRACTS
130
Europium on graphene:
phase coexistence of clusters and islands

1 1 2,3 1 4
Thomas Michely , Daniel F. Förster , Tim O. Wehling , Stefan Schumacher , Achim Rosch
1
II. Physikalisches Institut, Universität zu Köln, Zülpicher Straße 77, 50937 Köln, Germany
2
Institut für Theoretische Physik, Universität Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany
3
Bremen Center for Computational Materials Science, Am Fallturm 1a, 28359 Bremen, Germany
4
Institut für Theoretische Physik, Universität zu Köln, Zülpicher Straße 77, 50937Köln, Germany

michely@ph2.uni-koeln.de

In recent years, it has become apparent that the properties of graphene, even if present in high structural
quality, depend critically on its environment, e.g. on the type and distribution of chemical species
adsorbed to graphene. This critical dependence of the graphene properties on the environment may also
be turned into an advantage if new compound materials are constructed that bestow graphene with novel
properties while keeping the desirable features of its electronic structure intact (e.g. its conical bands and
the Dirac cone). As an example, it was proposed to bring the ferromagnetic insulator EuO into contact with
graphene in order to induce a spin split Dirac cone with the resulting option for spin filtering in graphene
[1]. Due to the large magnetic moment of 7μB of the Eu 4f-shell, also metallic Eu is a material with the
potential to bestow graphene with magnetic properties.

As a prerequisite for future work in this direction, it is necessary to understand in detail the adsorption and
growth of Eu on graphene. Moreover, we believe that a systematic study of Eu adsorption and growth as a
function of coverage and temperature under controlled ultra high vacuum conditions offers insight into
fundamental aspects of the interaction of graphene with an entire class of materials.

In this work [2], we investigate the adsorption and equilibrium surface phases of Eu on graphene on
Ir(111) in the temperature range from 35 to 400K and for coverages ranging from a small fraction of a
saturated monolayer to the second layer. We combine temperature-dependent Eu growth and annealing
experiments, scanning tunnelling microscopy, work function measurements by I(z) scanning tunneling
spectroscopy, low-energy electron diffraction, density functional theory calculations including 4f-shell
Coulomb interactions and qualitative modelling of electronic interactions in order to gain an
understanding of the Eu/graphene adsorbate system.

Most remarkably, at 300K in an intermediate coverage range a phase of uniformly distributed Eu clusters
(size 10–20 atoms) coexists in two-dimensional equilibrium with large Eu-islands in a ( 3 x 3)R30°
structure. We argue that the formation of the cluster phase is driven by the interplay of three effects:
Firstly, the metallic Eu–Eu binding leads to the local stability of ( 3 x 3)R30° structures. Secondly,
electrons lower their kinetic energy by leaving the Eu clusters, thereby doping graphene. Thirdly, the
Coulomb energy penalty associated with the charge transfer from Eu to graphene is strongly reduced for
ABSTRACTS

smaller clusters.
131
 References

[1] H. Haugen, D. Huertas-Hernando and A. Brataas, Phys. Rev. B 77 (2008) 115406.

[2] D.F. Förster, T.O. Wehling, S. Schumacher, A. Rosch and T. Michely, New J. Phys., in print (2012).

Figures

Figure 1: Scanning tunneling microscopy topographs taken at 35 K after Eu deposition at 300K on a perfect graphene layer
on Ir(111). Left: 3.3% ML Eu coverage. Right: 12% ML Eu coverage. 100% ML corresponds to one adsorbed atom per
graphene unit cell. Image size 320 nm x 320 nm. Inset size 40 nm x 40 nm.
ABSTRACTS
132
Graphene Based Terahertz Emitter

Sergey Mikhailov
Institute of Physics, University of Augsburg, Universitätsstr. 1, D-86135, Augsburg, Germany

sergey.mikhailov@physik.uni-augsburg.de

A specific design of a voltage tunable graphene based emitter and amplifier of electromagnetic radiation is
developed [1]. The proposed device consists of a few layers of graphene and hexagonal boron nitride (BN)
and is specifically structured in order to fulfill the threshold conditions for radiation and to optimize the
efficiency of radiation. A detailed theory of the device is developed. The influence of different physical
parameters (geometrical dimensions of the structure, electron/hole density, temperature, mean free path,
voltage biases) on the device operation is analyzed and the optimal and realistic conditions of the device
operation are found. It is shown that the proposed device is able to emit radiation in several frequency
bands from ~0.1 up to ~30 THz. The estimated emitted power is of order of 0.5 W/cm2 and the estimated
efficiency (the ratio of the emitted power to the heating power) is about 1%. The operating temperature
of the emitter can be close to room temperature, the heating of the device does not exceed several Kelvin
under realistic experimental conditions due to the very large surface-to-volume ratio in two-dimensional
graphene and to the high thermal conductivity of the BN or silicon substrate which can be used.

A slightly modified version of the basic structure can serve as an amplifier of a low frequency signal or as a
terahertz transistor combined with a distributed plane antenna.

Other opportunities of using graphene for terahertz science and technology will also be discussed. The
theoretically predicted [2,3] and later experimentally observed [4,5] nonlinear phenomena in graphene,
such as the frequency multiplication and mixing, will be overviewed. A new predicted effect of a giant
enhancement of higher harmonics due to plasma resonances will be presented [6].

References

[1] S.A.Mikhailov, European patent application “Graphene-based nanodevices for terahertz electronics” filed in
December 2011.
[2] S.A.Mikhailov, Europhys. Lett. 79, 27002 (2007).
[3] S.A.Mikhailov and K.Ziegler, J. Phys. Condens. Matter 20, 384204 (2008).
[4] E.Hendry, P.J.Hale, J.Moger, A.K.Savchenko and S.A.Mikhailov, Phys. Rev. Lett. 105, 097401 (2010).
[5] M.Dragoman, D.Neculoiu, G.Deligeorgis, G.Konstantinidis, D.Dragoman, A.Cismaru, A.A.Muller and R.Plana, Appl.
Phys. Lett. 97, 093101 (2010).
ABSTRACTS

[6] S.A.Mikhailov, Phys. Rev. B 84, 045432 (2011).

133
 Optical Excitations and Nanoplasmonics
in Graphene Flakes and Ribbons

1,2 1,2 2 1,2 3

Elisa Molinari , Caterina Cocchi , Deborah Prezzi , Alice Ruini , Marilia J. Caldas and
2
Stefano Corni
1
Physics Dept., University of Modena and Reggio Emilia, Modena, Italy
2
S3 Center - CNR Nanoscience Institute, Modena, Italy
3
Instituto de Fisica, Universidade de São Paulo, SP, Brazil

elisa.molinari@unimore.it

The fabrication of nanoscale graphene ribbons of finite length is now reaching atomic scale accuracy and
extreme edge control [1], and further geometries [2] and substrates are being explored experimentally.
Here we present a theoretical investigation of the optical excitations of elongated nanoflakes and ribbons.
We focus both on intrinsic field enhancement effects and on the modification of the optical properties by
means of edge modulation, functionalization and distortions. We employ either quantum chemistry semi-
empirical approaches [3-4] or ab-initio techniques [5], depending on the system type.

We find that the optical spectra of elongated graphene flakes are dominated at low energy by excitations
with strong intensity, comprised of characteristic coherent combinations of a few single-particle
transitions with comparable weight. They give rise to stationary collective oscillations of the photoexcited
carrier density extending throughout the flake, and to a strong dipole and field enhancement. This
behavior is robust with respect to width and length variations, thus ensuring tunability in a large frequency
range. The implications for nanoantenna and other nanoplasmonic applications are discussed for realistic
geometries down to the nm and sub-nm, where atomistic and quantum mechanical effects are found to
play a key role.

Our work shows that width modulation and edge functionalization [3-4] can be exploited to design both
type-I (straddling) and type-II (staggered) all-graphene nano-junctions. In the first case, we find that
minimal width-modulations are sufficient to obtain confinement of both electrons and holes, thus forming
optically active quantum dots with unique properties [5]. In the second case, we demonstrate that
electron affinities and ionization potentials of GNFs can be tuned to form both types of nanojunction [3].
At variance to type-I, type-II GNJs can display indirect excitations with electron and hole densities localized
on opposite sides [4]. The effect of functionalization-induced distortions is also discussed.

References

[1] J. Cai et al,. Nature 466, 470–473 (2010)

[2] S. Blankenburg et al., ACS Nano asap article, DOI: 10.1021/nn203129a.
[3] C. Cocchi et al,. J. Phys. Chem. C 115, 2969-2973 (2011).
ABSTRACTS

[4] C. Cocchi et al. J. Phys. Chem. Lett. 2, 1315–1319 (2011).

[5] D. Prezzi et al,. Phys. Rev. B 84, 041401 (2011).
134
Folds and buckles at the nanoscale: experimental and theoretical
investigation of the bending properties of graphene membranes

1 1 2 1
Vittorio Morandi , Luca Ortolani , Emiliano Cadelano , Giulio Paolo Veronese , Cristian Degli
1 4 2,3
Esposti Boschi , Etienne Snoeck and Luciano Colombo
1
CNR IMM-Bologna, Via Gobetti, 101, 40129 Bologna, Italy
2
CNR IOM-Cagliari, Cittadella Universitaria, 09042 Monserrato, Italy
3
University of Cagliari, Physics Department, Cittadella Universitaria, 09042 Monserrato, Italy
4
CEMES-CNRS, 29 rue Jeanne Marvig, 31055 Toulouse, France.
morandi@bo.imm.cnr.it

While the unique elastic properties of monolayer graphene (under either stretching or bending loading
conditions, as well as both in the linear and nonlinear regimes) have been extensively investigated [1-4],
comparatively less knowledge has been developed so far on folded graphene ribbons. Nevertheless, it has
been recently suggested that fold-induced curvature (occurring without in-plane strain) could possibly
affect the local chemical reactivity [5], the mechanical properties [6] and the electron transport of
graphene membranes [7]. This is indeed an intriguing perspective, since a proper engineering of the
folding and/or bending could enable a materials-by-design approach where tailored ribbons are used as
enhanced nano-resonators or nano-electro-mechanical devices.
In this work we will review an ongoing effort to understand the combined folding and bending properties
of graphene, where high-resolution transmission electron microscopy (HREM), continuum elasticity
theory, and tight-binding atomistic simulations are concurrently combined to provide a complete
nanoscale geometrical and physical picture. In particular, we will focus on the edge curvature and
topography of folded graphene membranes, with different crystalline orientations. Figure 1 shows the
equilibrium shape for a closed bi-layered edges graphene nanoribbon predicted by atomistic simulations.
Theoretical predictions were validated by applying a novel experimental methodology for the transmission
electron microscope, capable of recovering the 3D topography of the folded membrane. Figure 2-a shows
the experimental HREM image of a folded monolayer. Apparent strains in the graphene lattice (Fig. 2-b)
can be used to recover the 3D shape of the folded edge (Fig. 3-d), with sub-nanometre lateral resolution
and height precision.

References

[1] V. Pereira and A. Castro Neto. Phys. Rev. Lett. 103, 046801 (2009).
[2] E. Cadelano et al. Phys. Rev. Lett. 102, 235502 (2009).
[3] E. Cadelano et al. Phys. Rev. B 81, 144105 (2010).
[4] Kim et al. Phys. Rev. B 83, 245433 (2011).
[5] V. Tozzini and V. Pellegrini. C 115, 25523 (2011).
[6] Y. Zheng et al. Nanotechnology 22, 405701 (2011).
ABSTRACTS

[7] E. Prada et al. Phys. Rev. Lett. 105, 106802 (2010).

135
 Figures

Figure 1: Modeled closed bi-layer edge graphene nanoribbon, with the folded border parallel to the armchair direction.

Figure 2: a) HREM image of a folded graphene membrane. b) Strain component along the direction perpendicular to the
border, as reconstructed from a. c) Strain profile over region 1 in b. The compression of 4% close to the edge corresponds
to a slope of 16% over a region of 3nm. d) 3D structure of the folded edge reconstructed from the strain profile.
ABSTRACTS
136
Scanning Probe Microscopy
on Graphene Quantum Dots

1 1 2 3 1 1 2
M. Morgenstern , D. Subramaniam , F. Libisch , Y. Li , C. Pauly , V. Geringer , R. Reiter ,
1 1 2 4 4 3 1
T. Mashoff , M. Liebmann , J. Burgdörfer , C. Busse , T. Michely , R. Mazzarello , M. Pratzer
1
II. Institute of Physics and JARA-FIT, RWTH Aachen, D-52075 Aachen, Germany
2
Institute for Theoretical Physics, Vienna University of Technology, A-1040 Vienna, Austria
3
Institute for Theoretical Solid State Physics and JARA-FIT, RWTH Aachen University, D-52074 Aachen, Germany
4
II. Physikalisches Institut, Universität zu Köln, Zülpicherstrasse 77, D-50937 Köln, Germany

mmorgens@physik.rwth-aachen.de

I will present data of wave function mapping in graphene quantum dots deposited on an Ir(111) surface
[1]. These quantum dots are confined exclusively by zig-zag edges. However, edge states are absent due to
an exchange interaction of the π-bands of graphene with the dz2 surface states of the Ir(111) as evidenced
by a combination of density functional theory calculations and scanning tunneling spectroscopy data. The
same exchange interaction, which gets continuously smaller away from the edges, leads to a weak
confinement of the quantum dot states. It turns out that this weak confinement is decisive to achieve
rather regular wave functions within the quantum dots as observed experimentally (Fig. 1). Good
agreement for the wave function energies is achieved by a simple analytic model, but careful analysis of
the probed wave function patterns reveals that their appearance is additionally influenced by the
penetration of an sp-like surface state of Ir(111) into graphene.

In addition, I will show how graphene quantum dots can be produced on graphene flakes by local anodic
oxidation using an atomic force microscope.

References

[1] D. Subramaniam et al., Phys. Rev. Lett. 108 (2012) 046801.

Figures
ABSTRACTS

Figure 1: Scanning tunneling spectroscopy images (upper line) of a graphene quantum dot deposited on Ir(111) in
comparison with the local density of states calculated by a tight binding model (lower line). Measurement voltages and
energies are indicated [1].
137
 “Is the Future Black?
The Chemist’s Search for Graphene and Carbon Materials”

Klaus Müllen
Max-Planck-Institute for Polymer Research, Mainz, 55128, Germany
muellen@mpip-mainz.mpg.de

Research into energy technologies and electronic devices is strongly governed by the available materials.
More recently, carbon allotropes and carbon-rich molecules play an increasingly important role as
electronic conductors, semiconductors and catalysts and are attractive alternatives to established organic
and inorganic materials. The unique physical and chemical properties of the two-dimensional (2D) π-
electron system graphene ask for its chemical synthesis.
We introduce a synthetic route to graphenes which is based upon the cyclodehydrogenation
(“graphitization”) of well-defined dendritic (3D) polyphenylene precursors. This approach is superior to
physical methods of graphene formation such as chemical vapour deposition or exfoliation in terms of its
(i) size and shape control, (ii) structural perfection, and (iii) processability (solution, melt, and even gas
phase).
Columnar superstructures assembled from these nanographene discs serve as charge transport channels
in electronic devices. Field-effect transistors (FETs), solar cells, and sensors are described as examples and
their exemplary performance is discussed in terms of supramolecular order and interfacing.
Upon pyrolysis in confining geometries or “carbomesophases”, the above carbon-rich 2D- and 3D-
macromolecules transform into unprecedented carbon materials and their carbon-metal nanocomposites.
Exciting applications are shown for battery cells and fuel cells. In the latter case, nitrogen-containing
graphenes serve as catalysts for oxygen reduction whose efficiency is superior to that of platinum. Further,
transparent and conducting window-electrodes are fabricated which can replace ITO.

References

Feng, X., Marcon, V., Pisula, W., Hansen, M. R., Kirkpatrick, J., Andrienko, D., Kremer, K., Müllen, K., Nature Mater. 2009,
8, 421; Pang, S., Tsao, H. N., Feng, X., Müllen, K., Adv. Mater. 2009, 21, 3488; Yang, S., Feng, X., Zhi, L., Cao, Q., Maier, J.,
Müllen, K., Adv. Mater. 2010, 22, 838; Liu, R., Wu, D., Feng, X., Müllen, K., Angew. Chem. Int. Ed. 2010, 49, 2565; Käfer, D.,
Bashir, A., Dou, X., Witte, G., Müllen, K., Wöll, C., Adv. Mater. 2010, 22, 384; S. Blankenburg, M. Bieri, R. Fasel, K. Müllen,
C.A. Pignedoli, D. Passerone, Small 2010, 6, 2266; Diez-Perez, I., Li, Z., Hihath, J., Li, J., Zhang, C., Zang, X., Zang, L., Dai, Y.,
Heng, X., Müllen, K., Tao, N., Nature Commun. 2010, 1, 31, DOI: 10.1038/1029; Liang, Y.; Schwab, M. G.; Zhi, L. J.;
Mugnaioli, E.; Kolb, U.; Feng, X.L.; Müllen, K., J. Am. Chem. Soc. 2010, 132, 15030; Yang, S.; Feng, X.; Ivanovic, S.; Müllen,
K., Angew. Chem. Int. Ed. 2010, 49, 8408; Yang, S., Feng, X., Wang, L., Tang, K., Maier, J., Müllen, K., Angew. Chem. Int. Ed.
2010, 49, 4795; Cai, J., Ruffieux, P., Jaafar, R., Bieri, M., Braun, T., Blankenburg, S., Muoth, M., Seitsonen, A. P., Saleh, M.,
Feng, X., Müllen, K., Fasel, R., Nature 2010, 466, 470; Treier, M., Pignedoli, C. A., Laino, T., Rieger, R., Müllen, K.,
Passerone, D., Fasel, R., Nature Chem. 2011, 3, 61; Liu, R., von Malotki, C., Arnold, L., Koshino, N., Higashimura, H.,
Müllen, K., J. Am. Chem. Soc. 2011, 133, 10372; Jimenez-Garcia L., Kaltbeitzel A., Enkelmann V., Gutmann J. S., Klapper M.,
Müllen K., Adv. Funct. Mater. 2011, 21 (12), 2216; Bieri M., Blankenburg S., Kivala M., Pignedoli C. A., Ruffieux P., Müllen
K., Fasel R., Chem. Commun. 2011, 47, 10239; Li, H. L., Pang S. P., Wu S., Feng X. L., Müllen K., Bubeck C., J. Am. Chem.
ABSTRACTS

Soc. 2011, 133, 9423.

138
Graphene on the reconstructed Pt(100)
surface and its interaction with atomic hydrogen

L. Nilsson, M. Andersen, R. Balog, J. Bjerre, E. Lægsgaard, B. Hammer, F. Besenbacher, I.

Stensgaard and L. Hornekær
Interdisciplinary Nanoscience Center and Department of Physics and Astronomy,
University of Aarhus, Denmark

Louis@inano.au.dk

Introduction
Despite an enormous development for graphene fabrication within the last eight years, the production of
high quality, large scale graphene by cost efficient routes needs further improvements to meet industry
standards [1]. A fundamental understanding of the growth of graphene is therefore of utmost importance.
Here, we demonstrate, from an interplay between STM and DFT calculations, that a graphene sheet can be
grown continuously on the hex-reconstructed Pt(100) surface even across step edges and domain
boundaries in the platinum substrate [2].

To address the challenge of opening a band gap in graphene, we have recently presented results
demonstrating a band gap opening in graphene on Ir(111) by patterned hydrogen adsorption [3]. The
resulting patterned adsorption structure was facilitated by the interaction between the iridium substrate
and the graphene sheet. To obtain a better understanding of the role of the substrate, we investigate the
interaction between hydrogen atoms and graphene grown on the reconstructed Pt(100) surface by STM
and temperature programmed desorption (TPD) experiments combined with DFT calculations.

Techniques
STM measurements were performed using the so-called Aarhus STM. The Pt (100) surface was cleaned by
numerous cycles of 2 keV Ne sputtering and annealing up to 1000°C, combined with annealing in O2 at
700°C, followed by flashes to 900°C. The cleanliness of the surface was checked with STM. Synthesis of
graphene was typically carried out by exposing the Pt surface to 100-200 L of either ethylene or propylene
(C3H6) at pressures in the low 10-7 torr range and a sample temperature of 700°C, with periodic flashes to
900°C. A commercial “Hydrogen Atomic Beam Source, HABS-40” was used to expose the surface to
thermally cracked atomic hydrogen atoms.

The DFT calculations regarding rotated sheets of graphene on a Pt(111) surface were performed with the
semi-local meta-GGA density functional M06-L implemented in the real-space projector augmented wave
GPAW code.

The calculations regarding edge dislocation lines in graphene involved supercells with hundreds of atoms
and were therefore (for reasons of computational efficiency) performed with the Siesta code. Exchange
and correlation effects were described using the GGA functional of Perdew, Burke and Ernzerhof (PBE).
ABSTRACTS

Results and Discussion

A continuous graphene sheet has been grown on the well-known Pt(100)-hex-R0.7 reconstruction[4].
Interestingly, the reconstruction of the platinum substrate is still present after the growth of graphene
(figure 1). The graphene is found to grow across step edges and domain boundaries (figure 1) and thereby
139
 forming a continuous sheet. For domain boundaries of 7 degrees, the graphene is observed to rotate by
incorporating defects similar to the Stone-Wales defects [5]. From STM it is revealed that the graphene
sheet tends to have either an armchair or a zigzag direction aligned with the direction of the
reconstruction of the platinum surface, however, other angles are also observed. The observed energy
difference between different orientations of the graphene on the substrate is accordingly found to be
small from DFT calculations.

We also present a combined STM and TPD investigation of the interaction of the graphene with atomic
hydrogen. At low coverage, the hydrogen atoms are observed from STM to form dimer structures similar
to those observed previously on HOPG, and the desorption energy found from TPD is also similar to that
found for HOPG [6]. At higher coverage the reconstruction of the platinum substrate is lifted and extended
structures are depicted by STM. From TPD a distinct shift in desorption energies is observed. The
experimental data indicate that the platinum substrate plays an active role in stabilizing these adsorbate
structures on graphene. The experimental findings are supported by DFT calculations.

References

[1] Bae S, Kim H, Lee Y, Xu XF, Park JS, Zheng Y, et al. Roll-to-roll production of 30-inch graphene films for transparent
electrodes. Nature Nanotechnology. 2010;5(8):574-8.
[2] Nilsson L, Andersen M, Bjerre J, Balog R, Hammer B, Hornekær L, et al. Preservation of the Pt(100) surface
reconstruction after growth of a continuous layer of graphene. Surface Science. 2012;606(3-4):464-9.
[3] Balog R, Jorgensen B, Nilsson L, Andersen M, Rienks E, Bianchi M, et al. Bandgap opening in graphene induced by
patterned hydrogen adsorption. Nature Materials. 2010;9(4):315-9.
[4] Borg A, Hilmen AM, Bergene E. STM studies of clean, CO-exposed and O2-exposed Pt(100)-hex-R0.7-degrees. Surface
Science. 1994;306(1-2):10-20.
[5] Duplock EJ, Scheffler M, Lindan PJD. Hallmark of perfect graphene. Physical Review Letters. 2004;92(22):225502.
[6] Hornekaer L, Sljivancanin Z, Xu W, Otero R, Rauls E, Stensgaard I, et al. Metastable structures and recombination
pathways for atomic hydrogen on the graphite (0001) surface. Physical Review Letters. 2006;96(15):156104.

Figures
ABSTRACTS

Figure 1: STM image of a graphene area with a domain boundary between two perpendicular domains of the underlying
hex-reconstructed Pt(100) surface. The white lines indicate zigzag directions in the graphene.
140
Graphene-based nanomaterials
for field emission applications

Alexander N. Obraztsov, Victor V. Kleshch, Petr V. Shvets, Alexander P. Volkov

Department of Physics, M.V. Lomonosov Moscow State University, Moscow 119991, Russia
obraz@polly.phys.msu.ru

Field electron emission (FE) phenomenon has been a matter of considerable interest for purely academic
and applied science since it was discovered in 1897. In contrast to other electron emission mechanisms
(thermionic or photo emission) the field emission doesn’t need any power supply. Owing to this reason
the field emission is frequently referred to as “cold” and corresponding electron emitters as “cold
cathodes.” The FE is registered only at large electric field strength requiring an extremely high voltage to
be applied between the flat cathode and anode. To reduce the voltage down to the values, which are
practically suitable for vacuum electronic devices and for research purposes, the creation of emitters in
form of needles with high aspect ratio is required. One of the most attractive features of the FE is its
potential ability to provide the electron emission with very high current density. However, emitting
surface area of a single emitter with high aspect ratio is usually quite small. Thus, to obtain electron beams
with reasonable value of total current, the FE cathodes must contain arrays of numerous emitters. The
abilities to produce such kind of micron-sized FE cathodes were demonstrated previously using Si and
some other semiconductors and hard metals. However conventional lithographic technique of fabrication
of such FE cathodes is complicated and expensive hampering wide application of the cold cathodes made
of these materials. Since 1990s the interest to the FE has been triggered by the discovery of carbon
nanotubes (CNT) and other types of nanocarbons. Having graphitic type atomic structure these
nanostructured materials possess advantageous properties for efficient field emission: strong interatomic
bonds and corresponding chemical inertness and robustness to ion bombardment; high conductivity and
electron mobility, providing low resistive heating and voltage drop across emitter body; and high aspect
ratios of the individual nanostructures, allowing usage of moderate voltages.

We report here our recent results on investigation of field electron emission from graphene-based
nanocarbon film materials. The films were obtained using chemical vapor deposition (CVD) from
methane\hydrogen gas mixture activated by a direct current discharge. Si wafers, Ni or other metal sheets
with dimensions up to 50 mm in diameter were used as the substrates. The field emission cathodes were
made from the CVD films consisting of tiny graphite flakes with few graphene layers (of 2 to 50) oriented
perpendicularly to substrate surface (see Fig. 1). Composition, structure and surface morphology of the
nano-graphite films were analyzed with Raman, SEM and HR TEM (see, e.g. [1]). Our investigations of the
field emission characteristics of the CVD films shown that this material combine advantages of CNT species
(high aspect ratio, chemical inertness etc.) with other characteristics required for practical applications in
vacuum electronic devices [2]. To demonstrate abilities of the nano-graphite cold cathodes we have
developed device prototypes of the cathodoluminescent light sources (see, e.g. [2, 3] and Fig. 2). The
record characteristics were demonstrated for these light sources including power efficiency (more than
ABSTRACTS

10% for green light) and life time (exciding 10000 hours). Other developed device prototypes created with
use of the nano-graphite cold cathodes include X-ray source, electro-mechanical oscillators [4], electron
guns for particle accelerators and for application in an electric solar wind sail which is a space propulsion
concept that uses the natural solar wind dynamic pressure for production spacecraft thrust [5].
141
 References

[1] A.N. Obraztsov et al., Carbon 46 (2008) 963.

[2] A.N. Obraztsov, V.I. Kleshch, J. Nanoelectronics and Optoelectronics 4 (2009) 207.
[3] A.N. Obraztsov, Cathodoluminescent light source (2002), Patent RU 2274924, EP1498931, US7683530.
[4] V.I. Kleshch, et al., ETP Letters 90 (2009) 464
[5] P. Janhunen, et al., Rev. Sci. Instr. 81 (2010) 111301.

Figures

Figure 1: SEM image of the nano-graphite CVD film morphology (a) and HR TEM image of the top end of a graphite flake
composing the film.
ABSTRACTS

Figure 2: The photographs of the cathodoluminescent lamps with the nano-graphite cold cathodes accordingly to [3].
142
Graphene for laser applications

1 1 2 2 1
E.D. Obraztsova , M.G. Rybin , A.V. Tausenev , V.A. Shotniev , V.R. Sorochenko ,
1 1
P.S. Rusakov , I.I. Kondrashov
1
A.M. Prokhorov General Physics Institute, RAS, 38 Vavilov street, 119991, Moscow, Russia
2
Avesta-Project Limited Liability Company, Troitsk, Moscow Region, Russia
elobr@mail.ru

Since 2009 graphene is becoming more and more popular as a material for the ultrafast nonlinear optical
modulators, working in a wide spectral range– so called “saturable absorbers” [1,2]. These elements
introduced into the laser cavity allow transformation of a continuous wave (cw) output laser radiation into
a train of sub-picosecond pulses. An important advantage of graphene is a possibility to realize a mode-
locking regime in a much wider spectral range (at least from 1um to 12 um), than the range covered by
single-wall carbon nanotubes [3-6].

In this work we review our new data on synthesis [7,8], characterization [9] and application of graphene
sheets for realization of the mode-locking regime with an output pulse duration of 200 fs in Er fiber laser
(with a working wavelength of 1.55 um). The average output power was about 2.3 MW. The repetition
rate was 34.2 MHz. A unique potential of graphene for formation of the saturable absorbers for a mid-IR
range (~5-6 um (CO laser) and ~ 10 um (CO2 laser)) is also discussed.

The work was supported by RAS research programs and RFBR projects-10-02-00792 and 11-02-92121.

References

[1] Bao L.J., Zhang H., Wang Yu et al., Adv. Func. Materials 2009, 19, 3077.
[2] Sun Z., Hasan T., Torrisi F., Popa D. et al., ACS Nano 2010,4,803.
[3] Il’ichev N.N., Obraztsova E.D., Garnov S.V. et al., Quantum Electronics 2004, 34, 572
[4] [Garnov S.V., S.A. Solokhin, E.D. Obraztsova et al., Las. Phys. Lett. 2007, 4, 648.
[5] Solodyankin M.A., Obraztsova E.D., Lobach A.S. et al., Opt. Lett. 2008, 33,1336.
[6] A.V. Tausenev, E.D. Obraztsova, A.S. Lobach et al., Appl. Phys. Lett. 2008, 92, 171113 .
[7] Rybin M.G., Pozharov A.S. and Obraztsova E.D., Phys.Stat. Solidi C, 2010, 7, 2785.
[8] M. G. Rybin, P. K. Kolmychek, E. D. Obraztsova et al., J. Nanoelectron. Optoelectron. 4(2) (2009) 239.
[9] Obraztsov P.A., Rybin M.G., Turnina A.V. et al. , NanoLetters, 2011,11,1540.
ABSTRACTS
143
 Introduction

Vincenzo Palermo
CNR Bologna, Italy
www.isof.cnr.it/nanochemistry/

A main advantage of graphene technology is that, being based on carbon, it takes advantage of the huge
power and versatility of carbon-based organic chemistry, which allows a fantastic diversification of
properties and functionalities at the nanoscale.

Graphene can be chemically functionalized exactly like organic molecules; on the other hand, Graphene
stands as a very suitable electronic platform material giving its close chemical affinity with organic
molecules, from π-conjugated materials, to fullerene, carbon nanotubes or DNA. Graphene properties can
therefore be widely enriched and diversified by using organic chemistry, through chemical doping, and
molecular or atomic functionalization of its surface.

Controlled chemistry of graphene and production of hybrid materials could thus overcome current
technological locks, paving the way to considerable improvements of graphene-based devices
performances and enlargement of the spectrum of applications, from high frequency devices, to switches
and chemical sensors.
The “GRAPHENE CHEMISTRY & MATERIALS” workshop aims at validating the roadmap developed within
the GRAPHENE FLAGSHIP Pilot initiative, in particular in the fields of graphene chemical functionalization
for electronics and composites applications, by an open consultation with leading experts in the field.

Figures
ABSTRACTS
144
Quantum Hall measurements on epitaxial graphene
with oxygen adsorption

1 1 1 1 2 2 1
E. Pallecchi , M. Ridene , D. Kazazis , C. Mathieu , F. Schopfer , W. Poirier , D. Mailly , and A.
1
Ouerghi
1
CNRS - Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis
2
Laboratoire National de Metrologie et d'Essais, 29 Avenue Roger Hennequin, 78197 Trappes, France

emiliano.pallecchi@lpn.cnrs.fr

Graphene’s unique electronic properties make it an ideal play ground for mesoscopic physics and a
promising candidate for novel electronics devices. The development of techniques capable of producing
large area high quality graphene has further increased the interest for such a material.

In epitaxial graphene (EG) grown on SiC the first carbon layer, also called the buffer layer, does not show
graphitic signature and is responsible for large electron doping of graphene, typically on the order of
1013cm-2. Therefore, several techniques such as molecular doping, photochemical gating, and
hydrogenation have been used to decreases the carrier concentrations.

We report on low temperature transport measurement on oxygen-adsorped epitaxial graphene grown on

SiC. From the low field Hall resistivity we extract a carrier concentration on the order of 8 x 1011 cm-2 which
is more than one order of magnitude smaller than typical values of intrinsic epitaxial graphene. The
reduction of electron doping is consistent with estimates from ARPES measurements performed prior to
and after oxygen exposure. We find a fully developed quantum Hall effect over large distances of 50 µm,
with a plateau at ν=2 and a vanishing longitudinal resistance. Such a plateau is the hallmark of single layer
graphene and suggests that the buffer layer is not fully decoupled from the silicon carbide substrate.
Finally, we show that annealing in vacuum of the sample results in an increase of the carrier
concentration, up to values typical of intrinsic graphene on the order of 1013 cm-2.

These observations are relevant for understanding oxygen adsorption on epitaxial graphene and for
applications to fields such as metrology and quantum devices.
ABSTRACTS
145
 Characterization and manipulation of graphene using AFM

Bae Ho Park
Konkuk University, Korea
baehpark@konkuk.ac.kr

Monolayer graphene is one of the most interesting materials applicable to next-generation electronic
devices due to its transport properties. However, realization of graphene devices requires suitable
nanoscale lithography as well as a method to open a band gap in monolayer graphene. Nanoscale
hydrogenation and oxidation are promising methods to open an energy band gap by modification of
surface structures and to fabricate nanostructures such as graphene nanoribbons (GNRs). Until now it has
been difficult to fabricate nanoscale devices consisting of both hydrogenated and oxidized graphene
because the hydrogenation of graphene requires a complicated process composed of large-scale chemical
modification, nanoscale patterning, and etching. I will report on nanoscale hydrogenation and oxidation of
graphene under normal atmospheric conditions and at room temperature without etching, wet process, or
even any gas treatment by controlling just an external bias through atomic force microscope
lithography.[1]

On the other hand, graphene produced by mechanical exfoliation has not been able to provide and ideal
graphene with performance comparable to that predicted by theory, and structural and/or electronic
defects have been proposed as one cause of reduced performance. I will report the observation of
domains on exfoliated monolayer graphene that differ by their friction characteristics, as measured by
friction force microscopy.[2] Angle-dependent scanning reveals friction anisotropy with a periodicity of
180⁰ on each friction domain, as shown in Fig. 1. The frictioni anisotropy decreases as the applied load
increases. It is proposed that the domains arise from ripple distortions that give rise to anisotropic friction
in each domain as a result of the anisotropic puckering of the graphene.

References

[1] Ik-Su Byun, Duhee Yoon, Jin Sik Choi, Inrok Hwang, Duk Hyun Lee, Mi Jung Lee, Tomoji Kawai, Young-Woo Son,
Quanxi Jia, Hyeonsik Cheong, and Bae Ho Park, ACS Nano 5, 6417 (2011).
[2] Jin Sik Choi, Jin-Soo Kim, Ik-Su Byun, Duk Hyun Lee, Mi Jung Lee, Bae Ho Park, Changgu Lee, Duhee Yoon, Hyeonsik
Cheong, Ki Ho Lee, Young-Woo Son, Jeong Young Park, and Miquel Salmeron, Science 333, 607 (2011).
ABSTRACTS
146
Figures

Figure 1: (A) Friction force images showing the changing friction contrast as the sample is rotated counterclockwise from
0⁰ to 184⁰ relative to the horizontal scan direction (red dashed arrow). Roman numerals indicate the three friction
domains. (B) Normalized friction force versus rotation angle for each domain, showing 180⁰ periodicity. The lines show
that the variations in friction can be fitted by a simple sine modulus function.

ABSTRACTS
147
 Reversible Hydrogen Storage by
Controlled Buckling of Graphene Layers

Vittorio Pellegrini
CNR and Scuola Normale Superiore, Pisa, Italy *

Graphene is an intriguing material that shows promises for hydrogen storage. We shall present in this talk
theoretical and experimental evidence that by changing the curvature of graphene, the energy barrier for
adsorbing and desorbing atomic hydrogen attached to the pi-bonds of graphene can be removed making it
possible to attach and release hydrogen at room temperature, a mechanism that can be exploited for
room temperature hydrogen storage applications.

By means of calculations based on density-functional theory, we demonstrate a tunability of the binding

energies of more than 2 eV by changing the sheet out-of-plane deformation up to +-0.2Å, with the convex
regions allocating the energetically favored hydrogen binding sites. We simulate the process of hydrogen
chemisorption on corrugated graphene and release under the application of time-dependent mechanical
deformations. Our results show that the corrugation of the graphene sheet and the controlled inversion of
its curvature yield fast and efficient storage and release of hydrogen [1]. Our corrugated graphene device
can potentially reach gravimetric capacities up to 8%wt and reversibly store and release hydrogen by
external control of the local curvature at room conditions and with fast kinetics.

Initial experimental tests of the capacity of corrugated graphene to bind hydrogen are carried out on
epitaxial graphene grown on SiC(0001). The initial carbon layer (also known as the interface, zerolayer or
buffer layer) below the monolayer graphene has been theoretically predicted to have a high curvature
with an amplitude of 1.2Å over a length of ~2nm making it an optimal laboratory for testing the interaction
between hydrogen and graphene as a function of curvature [2]. To this end we shall discuss scanning
tunneling microscopy experiments of hydrogenated graphene sheets grown on the silicon face of silicon
carbide. In these experiments we were able to atomically resolve, for the first time, the hexagonal lattice
of the zerolayer verifying that it is topologically identical to monolayer graphene [3]. Upon obtaining
atomic resolution, we hydrogenated the sample in situ and studied the position of hydrogen atoms on the
graphene lattice as a function of curvature [4]. We found that atomic hydrogen binds to the carbon atoms
in the convexly curved areas, in agreement with our theoretical evaluations based on DFT calculations [1],
which indicates an increase of ~0.15eV in binding energy with respect to flat graphene (0.7eV). We finally
measured the carbon hydrogen bond height to be ~1Å, in agreement with the expected bond length of
1.1Å [1].

* Work done in collaboration with S. Goler,C. Coletti,V. Tozzini, T. Mashoff, M. Morandini, K. V. Emtsev, S.
Forti, U. Starke, F. Beltram, and S. Heun

References
ABSTRACTS

[1] V. Tozzini and V. Pellegrini. J. Phys. Chem. C115, 25523 (2011).

[2] F. Varchon et al. Phys. Rev. B 77, 235412 (2008).
[3] S. Goler et al. submitted; arXiv:1111.4918
[4] S. Goler et al. in preparation.
148
Chemical Solutions to Exfoliate Graphite

Alain Pénicaud
Université de Bordeaux - CNRS, Centre de Recherche Paul Pascal, 33600 Pessac, France

penicaud@crpp-bordeaux.cnrs.fr

Graphite is insoluble in all media but may be dispersed with surfactants and/or sonication to obtain
metastables suspensions. However, some graphite intercalation compounds (GICs) have been shown to be
spontaneously soluble in polar organic solvents without the need for any kind of additional energy, such as
sonication or high shear mixing.[1-3] Solutions of negatively charged graphene flakes have been prepared
in low boiling point solvents such as tetrahydrofurane (THF) by dissolution of the graphite intercalation
compound (GIC) KC8. In contrast with difficult-to-handle and/or carcinogenic solvents, such as NMP,
dissolving graphene flakes in solvent such as THF opens up routes towards composites. Light scattering
analysis allows to detect, in situ, the presence of two-dimensional objects in solution, with an average
lateral size of over one micron. High resolution transmission electron microscopy analysis shows that the
solubilized graphene flakes are exclusively single and double layers with no evidence for thicker species.

References

[1] C. Vallés and A. Pénicaud, patent (2007) WO 2009/087287; FR 07/05803 august 9, 2007.
[2] C. Vallés et al., J. Am. Chem. Soc., 130, (2008) 15802-15804
[3] A. Catheline, C. Vallés, C. Drummond, L. Ortolani, V. Morandi, M. Marcaccio, M. Iurlo, F. Paolucci, A. Pénicaud,
"Graphene solutions", Chem. Commun. 47, 2011, 5470-5472

ABSTRACTS
149
 Reactivity of Graphene Sheets:
Cycloadditions and Rolling up to form Nanotubes

Maurizio Prato
Center of Excellence for Nanostructured Materials (CENMAT), INSTM UdR di Trieste, Dipartimento di Scienze Chimiche e
Farmaceutiche, University of Trieste, Trieste, Italy
prato@units.it

The production of graphene by micromechanical cleavage has triggered an enormous experimental

activity. Since then, many studies have demonstrated that graphene monolayers possess novel structural,
electrical and mechanical properties. However many important issues need to be addressed before this
material can be used. Much work has been produced on the chemical functionalization as a tool for tuning
graphene chemical and physical properties. For example, chemical functionalization can make graphene
dispersible in many solvents. To exploit the high mobility of graphene, the band gap engineering and
controllable doping of semimetal graphene can be achieved by chemical functionalization. Moreover, the
non-uniformity of graphene edges and the potential for dangling bonds are thought to have significant
influence on their chemical properties and reactivity. Chemical modification of various forms of graphene,
including reduced graphene oxide, liquid-phase exfoliated graphite, pristine graphene and its multilayers
has been obtained. For instance, the aryl diazonium-based reaction has been extensively studied as a
specific radical reaction on graphene layers. In graphene, the edges exhibit a higher reactivity than the
interior during this specific reaction. Instead, we have recently reported the functionalization of graphene
layers by condensation of a protected α-amino acid and paraformaldehyde, demonstrating that even if the
reactivity of graphene differs from that of fullerenes and carbon nanotubes, the 1,3-dipolar cycloaddition
can be efficiently performed and yields a highly functionalized material taking place not just at the edges
but also at the C=C bonds in the center of graphene sheets. However, further work needs to be performed
for understanding the chemical structure of the functionalized graphene and their reaction mechanisms.

In this work we present a detailed study on the reactivity of graphene sheets stabilized in DMF using two
different reactions: the 1,3-dipolar cycloaddition reaction and the amide-bond condensation reaction
achieved between the free carboxylic groups already present in the exfoliated graphene and the amino
functionalities of the attached moieties. In addition, we will show that under certain circumstances,
graphene layers can be rolled up to form carbon nanotubes.
ABSTRACTS
150
MSM photodetector
based on gold decorated graphene ink

Antonio Radoi1, Alina Cismaru1, George Konstantinidis1, Mircea Dragoman2

1
National Institute for Research and Development in Microtechnology (IMT-Bucharest), Str. Erou Iancu Nicolae 126 A,
077190, Voluntari-Bucharest, Romania
2
Foundation for Research & Technology Hellas (FORTH) P.O. BOX 1527, Vassilika Vouton, Heraklion 711 10, Crete, Greece

antonio.radoi@imt.ro

Graphene is a single atom monolayer of carbon atoms, has many applications in optics and optoelectronics
[1] competing important applications in nanoelectronics [2]. Several methods are used to fabricate
graphene: mechanical exfoliation, epitaxial growth and advanced chemical vapor deposition (CVD)
techniques [3]. Graphene monolayer flakes, obtained via mechanical exfoliation and deposited over
interdigitated (IDT) electrodes, were recently used for the photodetection at 1.55 μm with a responsivity
of 6.1 mA/W [4].

Lately, graphene inks are a promising alternative for graphene device implementation especially in
optoelectronic domain (see Ref. 5 and the references herein).

In this communication, we have used a combination of top-down and bottom-up approaches to fabricate a
graphene photodetector. Our device consists of a MSM IDT bimetallic electrodes (Au/Pt) array (see Figure
1a) deposited on high resistivity (HR) Si wafer over which gold decorated graphene dispersion has been
casted.

The Au-Pt IDT array was manufactured on HR Si substrate using standard metallization techniques and
photolithography. Pristine graphene nanoplatelets (PureSheets QUATTRO, NanoIntegris, USA) were
purified by removing the surfactant and re-suspension in distilled water. A certain aliquots of graphene
dispersion was allowed to dry onto glass slides and further used in the metallization process. After gold
has been deposited using sputtering procedure, scanning electron microscopy investigations (SEM)
revealed nanosized gold platelets (Figure 1b).

The I-V measurements were made with the semiconductor characterization system Keithley 4200,
connected to a dark Faraday cage and the light was incident directly on the device. Due to the relatively
high mobility of the photogenerated electrons and holes and the small gaps between IDT fingers (1 mm), a
significant photoresponse is achieved before carrier recombination. The I-V characteristics were first
recorded at dark and for illumination with a halogen lamp, which generates a tunable power with a
maximum of 150 W in the visible spectrum. Also, an IR source consisting of a tungsten halogen lamp with a
power of 0.5 mW, which extend the spectral domain from 1500 nm to 2500 nm was used. The resulted I-V
responses are depicted in Figure 2.
ABSTRACTS

From the above figure we can see that in the UV-VIS spectral region when 100% of the power lamp is
illuminating the photodetector, the current is increasing more than 10 times (from ~90 nA up to ~1.2 mA
at V=8 V). In the case of IR, the current is increasing about 40 times when compared to dark current.
Further tests are currently under investigation.
151
 Authors acknowledge that this work was supported by a grant of Romanian National Authority for
Scientific Research, CNCS-UEFISCDI, project number PN-II-ID-PCE-2011-3-0071

References

[1] F. Bonaccorso, Z. Sun, T. Hasan, A. C. Ferrari, Nature Photonics, 4, (2010), 611.

[2] M. Dragoman, D. Dragoman, Progress in Quantum Electronics, 33, (2009),165.
[3] C. Soldano, A. Mahmood, E. Dujardin, Carbon 48, (2010), 2127.
[4] T. Mueller, F. Xia, P. Avouris, Nature Photonics, 4, (2010), 297.
[5] A. Radoi, A. Iordanescu, A. Cismaru, D. Dragoman and M. Dragoman, Nanotechnology, 21 (2010) 455202.

Figures

Figure 1: Interdigitated (IDT) bimetallic (Au/Pt) electrodes (a); SEM micrograph of gold decorated graphene nanoplatelets

Figure.2: The I-V response of graphene ink photodetector under various illuminatons.
ABSTRACTS
152
CVD Growth and Applications of Graphene with
Millimetre-Size Single-Crystal Grains and
Three-Dimensional Interconnected Graphene Networks

Wencai Ren, Libo Gao, Zongping Chen, and Hui-Ming Cheng

Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences,
Shenyang 110016, P.R. China
wcren@imr.ac.cn

Graphene has attracted increasing interests because of its unique two-dimensional structure, many
fascinating properties such as giant electron mobility, extremely high thermal conductivity, and
extraordinary elasticity and stiffness, as well as a wide range of technological applications [1,2]. Large
single-crystal graphene is highly desired and essentially important for the applications of graphene in
electronics since grain boundaries between graphene grains markedly degrade its quality and property.
However, graphene prepared so far is usually stitched together from nanometer to micrometer grains. In
addition, integration of individual two-dimensional graphene into macroscopic structures is also very
important for the application of graphene. A series of graphene-based composites and macroscopic
structures have been recently fabricated using chemically-derived graphene sheets. However, these
composites and structures suffer from poor electrical conductivity because of the low quality and/or high
inter-sheet junction contact resistance of the chemically-derived graphene sheets.

Here, we show the growth of millimeter-size hexagonal single-crystal graphene grains and graphene films
joint from such grains on Pt substrates by ambient-pressure chemical vapour deposition (CVD) [3], which
are more than 50 times larger than the biggest hexagonal single-crystal grains reported until now.
Moreover, we proposed a bubbling method to transfer these single graphene grains and graphene films to
arbitrary substrate, which is nondestructive not only to the graphene but also to the Pt substrates [3]. The
Pt substrates can be repeatedly used for graphene growth with almost no limit, and the graphene
obtained on a repeatedly-used Pt substrate has almost the same quality as that obtained originally. In
contrast, the commonly-used transfer process is mainly based on substrate etching, which not only leads
to inevitable damage to graphene, metal residues on graphene, and serious environmental pollution but
also greatly increases the production cost. In addition, such etching methods are not suitable for the
transfer of graphene from chemically inert substrates. These single-crystal graphene obtained shows high
crystal quality with the reported lowest wrinkle height of 0.8 nm and a carrier mobility greater than 7,000
cm2V-1s-1 under ambient conditions. The repeatable growth of graphene with large single-crystal grains on
Pt and its non-destructive transfer will enable various applications.

Besides two-dimensional growth of graphene, we have also realized the direct synthesis of a three-
dimensional (3D) porous graphene macrostructure by template-directed CVD, which we call graphene
foam (GF) [4]. This porous graphene bulk material consists of an interconnected network of graphene,
which is flexible and has fast transport channel of charge carriers for high electrical conductivity. Even with
a GF loading as low as 0.5 weight percent, GF/poly (dimethyl siloxane) (PDMS) composites show a very
ABSTRACTS

high electrical conductivity of 10 S/cm, 6 orders of magnitude higher than chemically-derived graphene-
based composites. Using this unique network structure and the outstanding electrical and mechanical
properties of GFs, as an example, we demonstrate the possibility of GF/PDMS composites for flexible,
foldable and stretchable conductors [4]. Recently, we found that this unique 3D macrostructure also show
a great potential for high-sensitivity gas detection [5].
153
 References

[1] A. K. Geim, K.S. Novoselov, Nature Materials 3 (2007) 183.

[2] A. K. Geim, Science 5934 (2009) 1530.
[3] L. B. Gao, W.C. Ren, H.L. Xu, L. Jin, Z.X. Wang, T. Ma, L.P. Ma, Z.Y. Zhang, Q. Fu, L.M. Peng, X.H. Bao, H.M Cheng,
Nature Communications DOI: 10.1038/ncomms1702.
[4] Z. P. Chen, W.C. Ren, L.B. Gao, B.L. Liu, S.F. Pei, H.M. Cheng, Nature Materials 10 (2011) 424.
[5] F. Yavari, Z.P. Chen, A.V. Thomas, W.C. Ren, H.M. Cheng, N. Koratkar, Scientific Reports DOI: 10.1038/srep00166.
ABSTRACTS
154
A local optical probe for measuring motion and
stress in a nanoelectromechanical system

Antoine Reserbat-Plantey, Laëtitia Marty, Olivier Arcizet, Nedjma Bendiab, Vincent Bouchiat
Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble Cedex 9, France
antoine.reserbat-plantey@grenoble.cnrs.fr

Nanoelectromechanical systems can be operated as ultrasensitive mass sensors and ultrahigh frequency
resonators, and can also be used to explore fundamental physical phenomena such as nonlinear damping
and quantum effects in macroscopic objects. Various dissipation mechanisms are known to limit the
mechanical quality factors of nanoelectromechanical systems and to induce aging due to material
degradation, so there is a need for methods that can probe the motion of these systems, and the stresses
within them, at the nanoscale. Here, we report a non-invasive local optical probe for the quantitative
measurement of motion and stress within a nanoelectromechanical system based on Fizeau
interferometry and Raman spectroscopy. The system consists of a multilayer graphene resonator that is
clamped to a gold film on an oxidized silicon surface. The resonator and the surface both act as mirrors
and therefore define an optical cavity. Fizeau interferometry provides a calibrated measurement of the
motion of the resonator, while Raman spectroscopy can probe the strain within the system and allows a
purely spectral detection of mechanical resonance at the nanoscale.
References

[1] Bunch, S.J. et al, Science, 315 (2007) 490.

[2] Otakar, F. et al, Nature Communications, 2 (2011) 255.
[3] Reserbat-Plantey, A. Marty, L. Arcizet, O. Bendiab, N. and Bouchiat, V. Nature Nanotechnology, accepted 15/12/11

Figures

ABSTRACTS

Figure 1: a: Whitelight optical image of a wedged MLG cantilever showing iridescence. Scale bar represents 5 μm. b: Schematic
view of the device : electrical excitation and optical detection, either with a photodiode (intensity) or a Raman spectrometer
(intensity and spectral data). c: Variations in G peak intensity (▲) and position (⊙) under MLG electrostatic actuation, revealing
peak softening at maximum cantilever deviation. The lower dashed line represents the drive voltage. d: Lock-in amplitude (dark
line) as a function of the drive frequency showing a resonant peak at ω0 = 1.3 MHz. The position of the Raman G peak (•) shows a
softening, which coincides with the mechanical resonance of the MLG cantilever.
155
 Supramolecular chemistry and
(nano)graphenes: a honeymoon?

Paolo Samorì
ISIS - University of Strasbourg & CNRS 7006, 8 allée Gaspard Monge, 67000 Strasbourg, France
samori@isis-ulp.org

Multifunctional materials based on π-conjugated systems, and in particular on (nano)graphenes, are key in
organic (opto)electronics. However, their practical use requires the optimization of the self-assembly of
multimodular architectures at surfaces using non-conventional methods, their controlled manipulation
and responsiveness to external stimuli, and the quantitative study of various physico-chemical properties
at distinct length- and time-scales. My lecture will review our recent findings on the bottom-up fabrication
of graphene based conducting architectures and materials as well as the use of multicomponent systems,
in particular based on responsive and semiconducting molecules, in order to realise multifunctional
devices such as optically switchable field-effect transistors.
ABSTRACTS
156
Spin manipulation of organometallics by
strain engineering of defected graphene

1 1 2 3 3
Biplab Sanyal , Sumanta Bhandary , Saurabh Ghosh , Heike Herper , Heiko Wende , Olle
1
Eriksson
1
Dept. of Physics and Astronomy, Uppsala University, Box-516, 75120 Uppsala, Sweden
2
School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
3
Faculty of Physics and Center for Nanointegration Duisburg-Essen (CeNIDE), University of Duisburg-Essen, Lotharstrasse
1, 47048 Duisburg, Germany
Biplab.Sanyal@physics.uu.se

In organic nanospintronics, one of the objectives is to manipulate the spin states of organic molecules [1]
with a d-electron center, by suitable external means, e.g., temperature pressure, light etc. In
organometallics, the central atom with unpaired d-electrons can have several spin states available, e.g.,
low, intermediate and high spin states. If the external agent is able to overcome the energy barrier, one
may move from one spin-state to other. For example, in iron porphyrin (FeP) molecule in the gas phase,
the ground state has a S=1 spin state with another higher energy minimum at S=2 spin state, which is
reachable by crossing an energy barrier of around 0.8 eV. Very recently, we have demonstrated [2] by first
principles density functional calculations that a strain induced change of the spin state, from S=1 to S=2,
takes place for an iron porphyrin (FeP) molecule deposited at a divacancy site in a graphene lattice. The
process is reversible in the sense that the application of tensile or compressive strains in the graphene
lattice can stabilize FeP in different spin states, each with a unique saturation moment and easy axis
orientation.

The effect is demonstrated in Fig. 1, where the molecular energy diagrams are shown for two spin states
along with the magnetization densities for the highest occupied molecular orbital (HOMO). Two situations
are shown (0% and 1% strain of the graphene lattice). When graphene is strained, the divacancy site on
which FeP is situated affects the bond length between Fe and N in FeP. As a result, the occupancies in the
molecular level changes and gives rise to a spin state change from S=1 to S=2. The magnetization densities
clearly show the nature of dz2 and dx2-y2 orbitals of Fe in FeP for S=1 and S=2 spin states respectively.

We also predict that the spin state change may be detected in x-ray magnetic circular dichroism (XMCD)
experiments. Our calculated values for the spin-dipole contribution <Tz> is quite large (7<Tz> = -1.89 μB and
1.32 μB) for 0% strained (S=1) and 1% strained (S=2) graphene lattice, respectively. Therefore, the
measured effective moments (sum of spin moment and spin-dipole moment) will be quite different for the
two spin states. The other detection method is the magnetic anisotropy in XMCD experiment. The
magnetic anisotropy energy (MAE) and hence, the easy axis of magnetization can be calculated by adding
the spin-orbit coupling term in the Hamiltonian. We have used second-order perturbation theory and a 4-
level model with HOMO, HOMO-1, LUMO and LUMO+1 states, (HOMO and LUMO being highest occupied
molecular orbital and lowest unoccupied molecular orbital respectively) to calculate MAE. We predict that
for the S=1 state, Fe will have an out of plane easy axis of magnetization with a MAE of 0.4 meV whereas,
ABSTRACTS

S=2 spin state yields an in-plane magnetization with a MAE of 2 meV. Considering these two prominent
effects, it is expected that the change in the spin state should be easily detectable in experiments.
157
 References

[1] H. Wende et al., Nat. Mater. 6, 516 (2007).

[2] S. Bhandary, S. Ghosh, H. Herper, H. Wende, O. Eriksson and B. Sanyal, Phys. Rev. Lett. 107, 257202 (2011).

Figures

Figure 1: Magnetization density isosurfaces for FeP on (left) 0% and (right) 1% strained graphene. The isosurfaces have
been plotted for an energy window of 0.4 eV below the Fermi levels in both cases. The spin densities shown in the left up
(side view) and right down (top view) parts correspond to spin-up and spin-down channels, respectively. The energy levels
with the d-orbital character of FeP are shown in the extreme left and right for 0% and 1% strained graphene, respectively.
ABSTRACTS
158
Potential of thermally conductive polymers based on carbon
allotropes in the development of new heat management components
on board a car

1 1 2 2 3
Alberto Fina , Guido Saracco , Samuele Porro , Fabrizio Pirri , Franco Anzioso and
3
Carloandrea Malvicino
1
Politecnico di Torino, Department of Applied Science and Technology, Torino, Italy
2
Italian Institute of Technology, Centre for Space Human Robotics, Torino, Italy
3
Centro Ricerche FIAT, Orbassano, Italy

Thermally conductive polymer nano-composites based on carbon allotropes (graphite, graphene and
nanotubes) offer new possibilities for replacing metal parts in several applications, including power
electronics, electric motors and generators, heat exchangers etc. The polymer brings in advantages such as
light weight, corrosion resistance and ease of processing; the nanofiller, to be distributed according to a
perculating network enabling phonon transfer, ensures sufficient thermal conductivity (a few W/mk).

In the automotive sector, the tremendous challenge of reduction of CO2 emissions, forces car
manufacturers to improve drastically the heat recovery chain as more than 60% of the fuel energy gets
actually lost. A survey of all the potential applications of carbon-based conductive polymers will be offered
relying on the expertise of a large car manufacturer. Several heat exchangers systems offer indeed good
application opportunities, including intercoolers, air conditioning condensers and evaporators as well as
novel radiators hosted in the car chassis to substitute those based on frontal air intake which affect
significantly the vehicle aerodynamics.

Unusually high thermal conductivity, in the range of a few thousands of W/mK 1, makes graphene and
carbon nanotubes the best promising candidate material for thermally conductive composites. However,
our experimental results, arising from the EU project Thermonano 2 and reviewed in this presentation,
show that it is not trivial to reach the desired heat conductivities 3. The bottleneck is the large interfacial
thermal resistance between the nanoparticles, which hinders the transfer of phonon dominating heat
conduction in carbon materials. In order to overcome this limitation, the aspect ratio and platelet-like
nature of graphene are beneficial, owing to the higher overlap obtainable with graphene compared to
CNT. The best compromise between cost and performance was found by a combination of different
allotropes, the carbon nanotubes bridging graphene or graphite platelets 4.

The compounding method and the plastic moulding process was found to have a significant importance in
ensuring the desired nanostructure. In this context, the graphene low apparent density poses specific
challenges and plays against a facile inclusion in the polymer matrix. Functionalisation of graphene platelets
may help in this context. Furthermore, to maximise the efficiency of particle/particle thermal contact, the
exploitation of self-structuring of nanoparticles in polymer blends is envisaged, based on the excellent results
recently obtained by this research group on micronic graphite-based polymer composites 4.
ABSTRACTS

In the presentation the complete development line of a prototype plate heat exchanger obtained by
injection moulding for an intercooler application will be disclosed and benchmarked against current heat
exchangers enlightening considerable economic margins.
159
 Finally, some ideas will be discussed to functionalize the nanofilled polymer heat exchangers with sensing
capabilities or increased surface conductivity. Graphene-based materials can indeed be solubilized and
transferred into nanoparticle-based inks or deposited through layer-by-layer deposition 5.

References

[1] J. Su, M. Cao, L. Ren, C. Hu, J. Phys. Chem. C, 115 (2011) 14469
[2] www.thermonano.org
[3] Z. Han, A. Fina. Thermal Conductivity of Carbon Nanotubes and their Polymer Nanocomposites: A Review. Prog.
Polym. Sci. 36 (2011) 914–944
[4] A. Fina, , Z. Han, G. Saracco, U. Gross, M. Mainil. Morphology and Conduction Properties of Graphite Filled
Immiscible PVDF/PPgMA Blends. Polymers for Advanced Technologies 2012, in press
[5] Laufer G., Carosio F., Martinez R., Camino G., Grunlan Jc. (2011) Growth and fire resistance of colloidal silica-
polyelectrolite thin film assemblies. In: JOURNAL OF COLLOID AND INTERFACE SCIENCE, vol. 356 n. 1, pp. 69-77
ABSTRACTS
160
Size-Selective Carbon Nanoclusters as
Precursors to the Growth of Epitaxial Graphene

R. Schaub, B. Wang, X.-F. Ma, M. Caffio and W.-X. Li

Scottish Centre for Interdisciplinary Surface Spectroscopy, School of Chemistry
University of St Andrews, St Andrews, KY16 9ST

renald,schaub@st-andrews.ac.uk

The nucleation and growth mechanisms of epitaxial graphene on a Rh(111) surface will be presented [1].
STM and DFT calculations show that carbon nano-islands form in the initial stages of graphene growth
using ethylene as the carbon source, possessing an exclusive size of 7 honeycomb carbon units (hereafter
labeled as 7C6). These magic-sized clusters adopt a dome-like hexagonal shape indicating that bonding to
the substrate is localized on the peripheral C atoms. Smoluchowski ripening is identified as the dominant
mechanism leading to the formation of graphene, with the size-selective carbon islands as precursors.
Control experiments and calculations, whereby coronene molecules, the hydrogenated analogues of 7C6,
are deposited on Rh(111), provide an unambiguous structural and chemical identification of the 7C6
building blocks.

References

[1] B. Wang, X.-F. Ma, M. Caffio, R. Schaub, W.-X. Li, Nano Letters, 11 (2011) 424.

Figures

Figure 1: Ball-and-stick model (left) and high resolution STM image (right) of the size-selective 7C6 nanoclusters identified
as precursors to the growth of graphene on a Rh(111) surface.
ABSTRACTS
161
 Large Area Plasma-Enhanced Chemical Vapor Deposition of
Nanocrystalline Graphite on Insulator for Electronic Device
Application

1 2 2 1 1
Marek E. Schmidt , Cigang Xu , Mike Cooke , Hiroshi Mizuta , Harold M.H. Chong
1
Nano Research Group, School of Electronics and Computer Science, University of Southampton,
Highfield, Southampton, UK
2
Oxford Instruments Plasma Technology, North End, Yatton, Bristol, UK

mets09r@ecs.soton.ac.uk

This paper reports on large area plasma-enhanced chemical vapor deposition (PECVD) of nanocrystalline
graphite (NCG) on thermally grown SiO2 wafer, quartz and sapphire substrates. Grown films are evaluated
using Raman spectroscopy, ellipsometry, scanning electron microscopy (SEM) and atomic force
microscopy (AFM). Electrical characterization and optical transmission measurements indicate promising
properties of this material for use as transparent electrodes and for electronic device application. A
plasma-based etch process for NCG has been developed.
Recently, growth of NCG on sapphire by molecular beam epitaxy has been reported [1]. This process,
however, requires ultra high vacuum compared to PECVD. Our contribution is a step towards large area
direct growth of few layer graphene on insulating substrates by PECVD, thus eliminating the required
transfer of graphene grown on metal catalysts by CVD [2].
The NC-graphite film is deposited using an Oxford Instruments Nanofab 1000 Agile tool, which allows
processing of wafers up to 8” in size. The table temperature is measured by a thermocouple below the
susceptor on which the substrate sits; the actual temperature of the samples is lower. In this work a
thermally oxidized 150 mm diameter silicon wafer was used for deposition. Quartz and sapphire samples
of 11x11 mm2 in size were used in a separate run for comparison. The process chamber is first conditioned
with hydrogen at 1000 mT and a flow rate of 100 sccm. This is followed by a heat-up procedure from
loading temperature of 700°C to the processing temperature of 900°C. The deposition is based on
introduction of methane and hydrogen at 60 sccm and 75 sccm, respectively, at a pressure of 1500 mT and
RF power of 100 W.
As-deposited NCG films are analyzed using a Rennishaw InVia Raman spectrometer with 532 nm laser
excitation wavelength. Typical Raman spectra of as-deposited NCG on SiO2, quartz and sapphire are shown
in Fig 1. All spectra exhibit distinct D, G and 2D peaks at around 1350, 1600 and 2700 cm-1, respectively.
The G peak position is unaffected by the excitation wavelength (532, 633 and 785 nm), and the intensity
ratio of the D to G peak is ~2.3. These observations are in accordance with previous reports on Raman
spectra of NCG [3]. The in-plane correlation length La = 21 Å is estimated from the D/G peak intensity ratio
[4]. Figure 2 shows an SEM micrograph of the surface topology of a 35 nm thick NCG film on SiO2. The
roughness RMS of 1.17 nm for this film was obtained from a 1x1 μm2 large AFM scan. This is an increase
compared to 0.1 ± 0.02 nm for the underlying SiO2. The thickness uniformity of the NCG film grown on a
150 nm wafer (shown in Fig. 3) was measured by ellipsometry, with results shown in Fig. 4. The central
7x7cm2 area of the wafer (see dotted line in Fig. 4) was mapped using Raman spectroscopy (532 nm, 5 mm
ABSTRACTS

data point spacing). The obtained distribution of the D to G peak intensity ratio is shown in Fig. 5.
Four-point hall measurement on 35 nm thick NCG on SiO2 was used to obtain the sheet resistance
RS=3728Ω/sq, mobility μ = 2.49 cm2/Vs and carrier concentration N = 1.8x1020 cm-3. Additionally, simple
electrical structures were fabricated on various samples for resistance measurements and film thickness
measurements by AFM. First, we pattern 4 and 50 μm wide lines with various lengths using
photolithography. This is followed by reactive ion etching of the NCG film in 20 sccm O2, 20 mT pressure
162
and 20 W RF power with an etch rate of 5 nm/min. After resist strip using N-Methyl-2- pyrrolidone (NMP),
Ti/Au contacts are realized by photolithography and subsequent lift-off in NMP, as shown in Fig. 6. For
these processed films, bulk resistivity of ρ = 0.029 Ωcm was obtained from two-probe measurement. The
optical transmission of an as-deposited 6.6 nm thick NCG on quartz glass was measured and is above 80%
across the visible spectrum.
Current work involves optimization of NCG film thickness uniformity and process tuning for thinner films
with larger crystalline domains.
Acknowledgements: This work was supported by the University of Southampton, School of Electronics and
Computer Science Scholarship and the Southampton Nanofabrication Centre.

References

[1] S. Jerng, D. Yu, Y. Kim, J. Ryou, S. Hong, C. Kim, S. Yoon, et al. J. Phys. Chem. C, 2011, 115 (11), pp 4491–4494
[2] A.K. Geim, Science, 324(5934) (2009), 1530-1534.
[3] A. C. Ferrari and J. Robertson, Phil. Trans. R. Soc. A 362 (2004), pp 2477–2512.
[4] A. C. Ferrari and J. Robertson, Physical Review B, 61(20) (2000), 14095.

Figures

Figure 1: Raman spectra of NCG on thermally grown Figure 2: SEM close-up of as-deposited NCG film on
SiO2, sapphire and quartz glass. thermal oxide.

Figure 3: Photograph of 150 mm wafer with NCG film. Figure 4: Ellipsometer thickness mapping of NCG film
British penny shown for size comparison. grown on 150 mm wafer.
ABSTRACTS

Figure 5: Distribution of Raman D to G peak intensity of Figure 6: SEM micrograph of NCG film patterned into two
central part of 150 mm wafer. Mapping area indicated 4 μm wide ribbons and contacted by Ti/Au.
in Fig 4.
163
 Gapped ground state in suspended bilayer graphene

F. Freitag, J. Trbovic, A. Baumgartner, R. Maurand, M. Weiss, and C. Schönenberger

Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland

Bilayer graphene is an exciting material, widely extending the range of phenomena as compared to
monolayer graphene. In bilayer graphene a gap can be opened by applying a potential difference between
the two layers, for example. Furthermore, the eight-fold ground-state degeneracy of the zero-energy
Landau level provides a large Hilbert space with novel composite particles, and due to the added mass,
Coulomb interaction is expected to be much larger than in monolayer graphene when the carrier density is
reduced. It has already been shown that the eight-fold ground state degeneracy can be lifted in a magnetic
field. Here we show that high-mobility suspended bilayer graphene devices allow for a spontaneous gap
formation at zero magnetic field [1] (similar work is reported in [2]) The properties of this gap are
investigated by means of electronic transport measurements in magnetic field as a function of gate-
voltage, source-drain bias voltage, and temperature. We find a very pronounced dip in the conductance at
the charge neutrality point in a rather narrow gate-voltage window. The differential finite-bias
conductance (dI/dV) reveals two kinds of gaps: a wide one of size 2meV with a shape that mimics the BCS
density-of-states and a smaller one of size 0.5meV. When repeating current annealing we find samples
where the conductance is vanishing fully over the whole width of the large gap and samples for which the
conductance does not vanish at the charge-neutrality point. For the latter the conductance rather appears
to saturate at low temperatures at a value that is independent of the applied magnetic field. The minimum
conductance of 0.2 e2/h at 230mK is however much lower than the typical minimum conductance values in
monolayer graphene. We will also discuss recent four terminal measurements on suspended bilayer
graphene.

We discuss the origin of the gaps in terms of the various many-electron broken symmetry states that have
been put forward by theory in recent years.

References

[1] F. Freitag, J. Trbovic, M. Weiss, and C. Schönenberger, arXiv:1104.3816, Phys. Rev. Lett. In press
[2] J. Velasco Jr., L. Jing, W. Bao, Y. Lee, P. Kratz, V. Aji, M. Bockrath, C.N. Lau, C. Varma, R. Stillwell, D. Smirnov, Fan
Zhang, J. Jung, A.H. MacDonald arXiv:1108.1609

Figures

Figure 1: Differential conductance Gd=dI/dV

measured as a function of source-drain bias
ABSTRACTS

voltage Vsd and back-gate voltage Vg. A

pronounced gap forms around the charge
neutrality point.
164
Anisotropic quantum Hall effect
in graphene on stepped SiC surfaces

T. Schumann, K.-J. Friedland, M. H. Oliveira, Jr., A. Tahraoui, J. M. J. Lopes, H. Riechert

Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
schumann@pdi-berlin.de

With its two-dimensional nature and extraordinary electrical properties, graphene is one of the most
promising materials for future electronic applications. The synthesis of graphene by the depletion of Si
from the surface of SiC is thereby of particular technological interest, since it offers the possibility of
preparing graphene on a large scale directly on an insulating substrate.

Epitaxial graphene prepared on the hexagonal SiC(0001) face exhibits a stepped surface with regular
terraces and step edges with graphene growing carpet-like over the complete substrate and forming a
closed layer. The influence of steps on the electrical transport at zero magnetic field has recently been
studied by different groups [1,2]. It was shown that step edges and monolayer-bilayer junctions contribute
to an intrinsic resistance. Other works [3] show that the electrical properties (i.e. carrier concentration and
mobility) are not altered by the existence of step edges. Besides these works, little research has been done
to determine the influence of the steps on the SiC surface on the transport properties of graphene,
especially in the presence of magnetic fields. Here, we report on an anisotropic behavior of the
magnetotransport in graphene at high magnetic fields for Hall bars aligned parallel and perpendicular to
surface terraces.

Monolayer graphene was prepared on semi-insulating 6H-SiC(0001) substrates with a miscut of ~1%.
Subsequently, Hall bars with a width of 2 μm and a length of 30 μm, oriented perpendicular or parallel to
the step edges on the surface, were defined by optical lithography and oxygen plasma etching. Their
surface morphology was investigated by atomic force microscopy and their structural quality by Raman
line scans. The Raman scans (not shown) reveal a strong variation in the position of the G- and 2D-line for
Hall bars oriented perpendicular to the terraces (i.e. crossing several step edges).

Hall- (ρxy) and longitudinal (ρxx) resistivity were measured at a temperature of 320 mK and magnetic fields
(B) perpendicular to the surface up to 14 T. The results are shown in figure 1. In both cases, the Hall
resistances at high magnetic fields show for both directions a similar behavior with only one clearly
recognizable Hall plateau. Carrier densities n and mobilities μ were derived from the Hall coefficients and
the resistivities at zero magnetic field.

However, the longitudinal resistivities show a quite different behavior for the two alignments at high
magnetic fields. While the Hall bar oriented parallel to the terraces shows a conventional quantum Hall
effect, the resistivity shows an overall increase with increasing magnetic field in the case where the
current crosses many surface steps. This behavior can not only be an effect of enhanced scattering, e. g. at
defects or impurities, since the resistivity at zero magnetic field is comparable. The anisotropy at high
ABSTRACTS

fields strongly indicates an influence of the steps of the SiC substrate on the magnetotransport properties
of epitaxial graphene.

To interpret this anisotropy, we adopt a simple model (figure 2). At high magnetic fields, the conductivity
is governed by a low number of channels at both edges of the Hall bar. The number of conductive channels
165
 is given by the filling factor ν and is proportional to n/B. In the region of the step edges, additional
conductive channels (corresponding to higher filling factors) may appear. One reason may be the lower
effective magnetic field (Beff ~0.9 B0) at the steps, caused by the tilt between the SiC surface (and hence
the graphene) and the step facet. A second reason might be differences in carrier concentration between
step edges and terraces. These additional channels enable the possibility that electrons scatter between
channels at opposite sides, since the spatial separation between the additional edge channels is reduced.
This enhances the backscattering, as indicated in Fig. 3, and may increase the longitudinal resistance at
high magnetic fields.

References

[1] M. K. Yakes et al. Nano Letters 10, 5 (2010) 1559.

[2] S.-H. Ji et al. Nature Materials 10, 11 (2011) 114.
[3] J. Jobst et al. Solid State Communications 151, 16 (2011) 1061.

Figures

Figure 1: Longitudinal- (ρxx) and Hall resistivity (ρxy) as a function of magnetic field (B) in Hall bar structures, aligned
parallel (black) and perpendicular (red) to the SiC terraces, respectively.

Figure 2: Model of the magnetotransport in graphene for narrow Hall bars on stepped SiC surfaces in side-view (a) and
top view (b).
ABSTRACTS
166
Graphene Technology Platform at BASF

Matthias Schwab
BASF SE
Technology Incubator - Graphene Research
GVM/I - J550, 67056 Ludwigshafen, Germany

matthias.schwab@basf.com

Graphene as an emerging material has recently spurred the interest of scientific research both in academia
and industry. At BASF graphene and graphene materials are currently being studied for several potential
fields of application. We have set up a graphene technology platform aiming at the systematic
investigation of this new carbon material fabricated either by top-down or bottom-up procedures. Owing
to its appealing electrical conductivity, graphene can be used for conductive formulations and coatings as
well as for polymer composite materials with antistatic properties. Also, graphene may serve as a new
carbon material thus replacing or complementing traditional carbon black additives in lithium-ion batteries
as well as activated carbons in supercapacitor devices. It is also intended to evaluate graphene-based
transparent conductive layers for their use in displays, organic solar cells and organic light emitting diodes.
On a longer perspective the semi-conducting properties of graphene nanoribbons fabricated from
chemical bottom-up approaches shall be explored.

The talk will focus on the recent activities of BASF in the field of graphene and provide an evaluation of
this promising material from an industrial point of view.

ABSTRACTS
167
 Transfer-Free Grown Bilayer Graphene Transistors
with Ultra-High On/Off-Current Ratio

Pia Juliane Wessely1, Frank Wessely1, Emrah Birinci1, Bernadette Riedinger2, Udo Schwalke1
1
Institute for Semiconductor Technology and Nanoelectronics (ISTN), Technische Universität Darmstadt,
Schlossgartenstraße 8, 64289 Darmstadt, Germany
2
Fraunhofer-Institut für Werkstoffmechanik, Wöhlerstraße 11, 79108 Freiburg, Germany

1. Introduction: In this paper we report on monolayer graphene transistors (MoLGFETs) and bilayer
graphene field effect transistors (BiLGFETs) which grow transfer-free on oxidized silicon wafers. By means
of catalytic chemical vapor deposition (CCVD) in-situ grown MoLGFETs and BiLGFETs, respectively, are
realized directly on oxidized silicon substrate, whereby the number of stacked graphene layers is
determined by the selected CCVD process parameters, e.g. temperature and gas mixture.
First experimental evidence demonstrating the feasibility of this transfer-free graphene growth method
has already been published in November 2009 [1, 2]. The results of a Fourier-analysis of transmission
electron microscopy (TEM) data of a fewlayer graphene sample revealed the crystalline properties of the
graphene multilayer more in detail as published in April 2011 [3]. In fact, the observed interplanar spacing
of 3.5Å is a strong evidence for the existence of fewlayer graphene grown by means of CCVD.
Furthermore, the combination of atomic force microscopy examination, Raman spectroscopy as well as
extensive electrical characterization of graphene structures on silicon dioxide confirms the suitability of
this novel in-situ CCVD growth process [4, 5, 6].
MoLGFETs exhibit the typically low on/off-current ratio of 16 and show the typical Dirac point. In contrast,
BiLGFETs exhibit ultra-high on/off-current ratios of 107, exceeding previously reported values by several
orders of magnitude. The transfer characteristic shows a pure unipolar p-type device behavior. Besides the
excellent device characteristics, the complete CCVD fabrication-process is silicon CMOS compatible. This
will allow a simple and low-cost integration of graphene devices for nanoelectronic applications in a hybrid
silicon CMOS environment.

2. Results and Discussion: The electrical characterization of the graphene devices is performed using a
Keithley SCS 4200 semiconductor parameter analyzer. The catalyst areas are simultaneously used as
source and drain contacts [5]. An illustration of the device is shown in Fig. 1a. Fig. 1b shows the transfer
characteristic of a MoLGFET. The current flow from source to drain (IDS) is measured as a function of the
applied backgate voltage (VBG), swept from -15V to 15V and reverse, while a constant voltage between
drain and source (VDS) of 3V is applied. The Dirac-point at VBG = -6V confirms the existence of electron and
hole conduction as expected for graphene [7]. The electrical characterization of several MoLGFETs shows
an average hysteresis value of VBG,MoLGFET = 16.8V ± 20% [6]. However, for in-situ CCVD grown graphene
FETs the maximum current is limited by the thin nickel conducting paths as well as the high contact
resistance caused by some carbon deposits on top of the source drain regions [5]. Fig. 1c shows the
current voltage characteristics of a typical in-situ CCVD grown BiLGFET depending on the applied backgate
voltage (VBG), exhibiting an on/off-current ratio of 1x107 at room temperature. Furthermore, when
ABSTRACTS

increasing the ambient temperature to 200°C, the on/off-current ratio only degrades slightly by one order
of magnitude for BiLGFETs [8]. The needed bandgap is partly induced by the applied backgate voltage.
Accordingly, we suspect that additional effects, like intensive interactions between bilayer graphene and
silicon dioxide are responsible to further enhance the bandgap. Such intensive interactions may develop
during the growth of the bilayer graphene on the silicon dioxide at moderate temperatures under well
defined ambient conditions within a CVD chamber [5]. Since substantial amounts of atomic hydrogen are
168
generated from the decomposition of methane during CCVD processing, it is likely that hydrogen atoms
adsorb on the graphene surface or may be incorporated within the graphene bilayer. As a result, effects
on the electronic properties such as increasing the bandgap are expected. All BiLGFETs show a clear
unipolar p-type device behavior which is consistent with the output characteristic [5]. The selection of the
carrier type (i.e. holes in this case) may be facilitated by additional doping and/or Schottky-barrier effects
[8]. In-situ CCVD grown BiLGFETs exhibit an average hysteresis of VBG,BiLGFET = 19.5V ± 20% [6]. The observed
hysteresis corresponds well to results on graphene devices obtained from other research groups [9]. The
hysteresis in both kind of transistors, i.e. MoLGFETs and BiLGFETs, is attributed to trapping and detrapping
of charges at the oxide-graphene interface [9].

3. Conclusions: BiLGFETs exhibit ultra-high on/off-current ratios of 1x107 exceeding previously reported
values by several orders of magnitude. We explain the improved device characteristics by a combination of
effects, in particular graphene-substrate interactions, hydrogen doping and Schottky-barrier effects at the
source/drain contacts as well. With this transfer-fee fabrication method hundreds of large scale BiLGFETs
are realized simultaneously on one 2’’ wafer in a silicon CMOS compatible process.

Acknowledgement: This research is part of the ELOGRAPH project within the ESF EuroGRAPHENE
EUROCORES program and partially funded by the German Research Foundation (DFG, SCHW1173/7-1).

References

[1] L. Rispal, U. Schwalke, SCS Trans., (2009)

[2] L. Rispal, P.J. Ginsel, U. Schwalke, ECS Trans., 33 (9) (2010), 13-19.
[3] P.J. Ginsel, F. Wessely, E. Birinci, U. Schwalke, IEEE DTIS (2011)
[4] P.J. Wessely, F. Wessely, E. Birinci, U. Schwalke, ECS Trans., (2011) in print
[5] P.J. Wessely, F. Wessely, E. Birinci, K. Beckmann, B. Riedinger, U. Schwalke, PhysicaE (2012), in print,
http://arxiv.org/abs/1111.6397
[6] P.J. Wessely, F. Wessely, E. Birinci, B. Riedinger, U. Schwalke, Electrochemical and Solid-State Letters, 15 (4) K1-K4
(2012) in print
[7] F. Schwierz, Nature Nanotechnology, 5, (2010)
[8] P.J. Wessely, F. Wessely, E. Birinci, B. Riedinger, U. Schwalke, ECS Trans., (2012) in print
[9] H. Wang, Y. Wu, C. Cong, J. Shang, T. Yu, ACS Nano 4, 12 (2010)

Figures

Figure 1: (a) Schematic drawing of a graphene field effect device structure produced by CCVD using an aluminum/nickel
catalyst system. (b) Current voltage characteristic of a monolayer graphene transistor as a function of the applied
ABSTRACTS

backgate voltage VBG exhibiting an on/off-current ratio of 16 at room temperature. (c) Current voltage characteristic of a
bilayer graphene transistor as a function of the applied backgate voltage VBG exhibiting an on/off-current ratio of 1x107 at
room temperature.
169
 Correlation of odd electrons in graphene:
Effect on chemistry, magnetism, and mechanics

Elena Sheka
Peoples’ Friendship University of Russia, Miklukho-Maklay str., 6, Moscow 117198, Russia
sheka@icp.ac.ru

In the imagination of the majority of quantum computationists, involved in the graphene nanoscience, the
motion of weakly bound odd electrons of graphene with different spins is not correlated. Only this fact can
justify them using computational techniques based on single restricted closed-shell determinants such as
widely used DFT schemes. Sometimes, the schemes have even been heralded as indisputable standard of
the computations in the field. However, the electron behavior in graphene is much richer and does not fit
a Procrustean bed of the electron correlation neglect just revealing peculiariries related to graphene
edges, structurally inhomogeneous chemical reactivity, size-dependent magnetism, enhancement of the
electron density of graphene bubles, and so forth.

When speaking about electron correlation, one must address the problem to the configuration interaction
(CI). However, neither full CI nor any its truncated version, clear and transparent conceptually, can be
applied for computations, valuable in graphene nanoscience, so that techniques based on single
unrestricted open shell determinants become the only alternative. UDFT and unrestricted Hartree-Fock
(UHF) approaches form the techniques ground and are both sensitive to the electron correlation, but
differently due to different dependence on electron spins. Nevertheless, one can suggest three
characteristic parameters that may characterize the extent of the electron correlation and that can be
evaluated within the framework of both techniques. Among the parameters there are the following:

1. Misalignment of energy
ΔERU=ER-EU (1)

Here ER and EU present total energies calculated by using restricted and unrestricted versions of the same
program;

2. The number of effectively unpaired electrons

ND = trD ( r r ′ ) and ND = ∑ A DA , (2)

where D ( r r ′ ) and DA present the total and atom-fractioned spin density caused by the spin asymmetry
due to location of electrons with different spins in different spaces;

3. Misalignment of squared spin

ΔSˆ 2 = SˆU2 - S(S + 1) (3)
2
ABSTRACTS

Here Ŝ presents the squared spin value calculated within the applied unrestricted technique.
U

Table 1 presents a set of the three parameters evaluated for a number of right-angled fragments (na,nz) of
graphene (na and nz count the numbers of benzenoid units along armchair and zigzag edges of the
fragment, respectively) by using AM1 version of semiempirical UHF approach. The first two parameters are
definitely not zero by absolute value, besides greatly dependent of the fragment size. At the same time,
their relative values are constant within ~10% accuracy pointing to a stable and size independent effect
170
caused by the electron correlation. Additionally, the relation ND = 2Sˆ U2 , which is characteristic for
correlated electrons in the singlet state, is rigidly kept over all fragments.

Odd
ΔE RU ND
Fragment electrons
( na ,nz ) Nodd Sˆ 2
δE RU = ΔE RU / E R δND = ND / Nodd
Kcal/mol e-
% %
(5, 5) 88 307.6 17 31 35 15.5
(7, 7) 150 376.2 15 52.6 35 26.3
(9, 9) 228 641.6 19 76.2 35 38.1
(11, 10) 296 760.1 19 94.5 32 47.2
(11, 12) 346 900.6 20 107.4 31 53.4
(15, 12) 456 1038.1 19 139 31 69.5

The data convincingly evidence that the electron correlation in graphene is significant. In view of the
correlation, peculiarities of the graphene chemistry, magnetism, and mechanics can be explained at the
quantitative level.

Chemical reactivity of graphene is atomically mapped due to difference in values DA in (2). The value,
whose expression should be properly adapted to the computational scheme in use, serves a quantitative
indicator of the target atom at any step of the chemical addition and lays the foundation of computational
synthesis of the graphene polyderivatives of any kind [1].

The electron correlation is the main reason for the species magnetism. In the case of graphene the
magnetism is molecular by origin and size dependent since the values of the magnetic constant , small
enough for the magnetic behavior of the singlet-ground-state species to become recordable, is achieved at
the average linear size of the graphene fragment of a few nm. The magnetism obviously disappears when
the size exceeds the electron mean free path [2].

Stretching graphene sheets results in strengthening the electron correlation thus providing increase in
their unpairing, which leads to lifting the electron density in general, and atomic chemical reactivity, in
particular [3], so that not a virtual magnetic field is responsible for a peculiar behavior of graphene bubles,
but a predictable change in the electron density of a stretched object lays the feature foundation.

General aspects of the odd electrons correlation related to sp2 nanocarbons and its manifestation in the
electronic properties of the species are presented in [4].

References

[1] E.F.Sheka and N.A.Popova, arXiv:1102.0922 [cond-mat.mes-hall], J Mol Mod (2012).

[2] E.F.Sheka, N.A.Popova, V.A.Popova, L.Kh. Shaymardanova, J Mol Mod 17 (2011) 1121.
[3] E.F.Sheka and L.A.Chernozatonskii, J Exp Theor Phys 110 (2010) 121.
[4] E.F.Sheka, Fullerenes: Nanochemistry, Nanomagnetism, Nanomedicine, Nanophotonics, CRC Press, Taylor&Francis
ABSTRACTS

Group, Boca Raton, 2011.

171
 Free standing graphene monolayer at
high hydrostatic pressure

1,2 1 1 3
Alexander V. Soldatov , Shujie You , Mattias Mases , Konstantin S. Novoselov
1
Department of Applied Physics Mechanical Engineering, Lulea University of Technology,
SE – 971 87 Lulea, Sweden
2
Department of Physics, Harvard University, Cambridge, MA 02138, USA
3
School of Physics and Astronomy, University of Manchester, Oxford Road,
Manchester M13 9PL, UK

Alexander.Soldatov@ltu.se

We report on the first Raman study of free standing (FS) graphene monolayer (membrane) at high
hydrostatic pressure in a diamond anvil cell (DAC). We were able to follow G - and G' band up to a pressure
of 10 GPa. Both modes exhibit significant attenuation and linear hardening on pressure increase at a rate
of 5.6-5.9 cm-1/GPa and 12 cm-1/GPa for G- and G' band respectively. The evolution of the bands
frequency, width, and relative intensity with pressure is discussed in detail. The modes' Gruneisen
parameter was determined and compared to that reported for uni- and bi-axial strain [1] and theoretical
predictions. The graphene membrane behaviour at high hydrostatic pressure differs drastically from that
of the single layer material deposited on a substrate [2] which obscures the intrinsic
material’s properties.

References

[1] T. Mohiuddin, A. Lombardo, R. Nair, et al., Phys. Rev. B 79, (2009), 205433.
[2] J.E Proctor, E. Gregoryanz, K.S. Novoselov, et al., Phys. Rev. B 80, (2009), 073408.
ABSTRACTS
172
Graphene audio voltage amplifier

Roman Sordan, Erica Guerriero, Laura Giorgia Rizzi, Massimiliano Bianchi, Laura Polloni
Department of Physics, Politecnico di Milano, Polo di Como, Via Anzani 42, 22100 Como, Italy

roman.sordan@como.polimi.it

The main building block of analog electronics is a voltage amplifier: an electronic device capable of
amplifying small alternating current (AC) voltage signals. Many graphene analog electronic devices,
performing different functions,[1-5] have recently been proposed stemming from high carrier mobility[6,7]
and ambipolar transport in graphene field effect transistors (FETs). However, none of these devices was
capable of signal amplification, thus ultimately requiring integration with Si transistors for performing this
most important task. Here we demonstrate an integrated graphene voltage amplifier paving the way for
all graphene analog electronics.[8]

Signal amplification was obtained by fabricating graphene transistors in which the top Al/Al2O3 gate stack
overlaps with the Ti/Au source and drain contacts (Figure 1a,b). A similar full-channel coverage exists in
conventional Si metal-oxide-semiconductor FETs and allows maximum drain current modulation as there
are no ungated parts of the channel that contribute to fixed series resistances which reduce the voltage
gain. The Al2O3 layer which forms on the surface of the Al gate prevents short circuits between the
contacts. The gate also serves as an additional heat sink which allows high drain currents ID and
consequently high voltage gain Av. Additionally, as the gate fully covers the channel, desorption of
adsorbates from graphene is suppressed at high drain currents, and therefore the electrical properties of
FETs are stable during operation. Voltage amplifiers were realized in a complementary push-pull
configuration (Figure 1c).

Figure 2a shows measured AC components of the input and output voltage signals of the amplifier biased
at VDD = 2.5 V. At this supply voltage a maximum voltage gain |Av|max = 3.7 (11.4 dB) was measured at an
input frequency f of 10 kHz. The frequency response of the fabricated amplifier in the frequency range
f < 5 MHz is shown in Figure 2b. High gain is preserved at very low frequencies due to a direct coupling
both at the input and output of the amplifier (i.e., there is no lower cut-off frequency). The gain remains
constant up to about 20 kHz, and then decreases as the frequency is increased, dropping by 3 dB at the
higher cut-off frequency f−3 dB = 70 kHz which also defines the bandwidth of the amplifier. The amplifier is
capable of signal amplification up to a unity-gain frequency f1 = 360 kHz. At this frequency, the amplifier
operates as a unity-gain amplifier (buffer), while for f > f1 it attenuates the input signal. The signal phase
shift φ introduced by the amplifier is 180° at low frequencies (signal inversion), decreasing to 90° at high
frequencies. Both amplitude and phase characteristics of the voltage gain indicate a typical dominant-pole
(at f−3 dB) behavior. However, this pole does not originate from the amplifier but from the capacitances of
the cables used to connect the amplifier to the measurement equipment (an intrinsic unity-gain frequency
can be estimated to be ∼ 9 GHz).
ABSTRACTS

Even higher gains could be obtained with higher supply voltages, with the use of gate dielectrics with
higher breakdown voltages. The obtained values demonstrate that, among other applications, the present
graphene amplifier is suitable for high fidelity amplification of audio signals. The high voltage gain
obtained in our devices can also be utilized to fabricate graphene digital logic gates which can be directly
coupled.
173
 References

[1] H. Wang, D. Nezich, J. Kong, T. Palacios, IEEE Electron Device Lett. 30 (2009) 547
[2] N. Harada, K. Yagi, S. Sato, N. Yokoyama, Appl. Phys. Lett. 96 (2010) 012102
[3] X. Yang, G. Liu, A. A. Balandin, K. Mohanram, ACS Nano 4 (2010) 5532
[4] A. Sagar, K. Balasubramanian, M. Burghard, K. Kern, R. Sordan, Appl. Phys. Lett. 99 (2011) 043307
[5] X. Yang, G. Liu, M. Rostami, A. A. Balandin, K. Mohanram, IEEE Electron Device Lett. 32 (2011) 1328
[6] K. I. Bolotin, K. J. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, H. L. Stormer, Solid State Commun. 146
(2008) 351
[7] X. Du, I. Skachko, A. Barker, E. Y. Andrei, Nature Nanotech. 3 (2008) 491 [8] E. Guerriero, L. Polloni, L. G. Rizzi, M.
Bianchi, G. Mondello, R. Sordan, Small 8 (2012) 357

Figures

Figure 1: Integrated graphene voltage amplifier. a) A Figure.2: Voltage amplification. a) AC

schematic of an amplifier. Source (VDD, GND) and drain
(OUT) contacts (Ti/Au) overlap with gate (IN) contacts (Al;
dark core) covered by an insulating layer (Al2O3; bright
shell). b) A tilted scanning electron microscope image of a
device. The arrows indicate the extent of the graphene
flake. c) A circuit diagram of the amplifier. Z = 1 MΩ||13 pF
is the input impedance of the oscilloscope used to measure
input and output signals while 50 Ω is the output resistance
of the input voltage source. Since |Z| >> 50 Ω the input
signal fully drops across Z, i.e., vIN(t) = VIN+vin(t), where VIN is
ABSTRACTS
components of the input and output voltage
signals at a frequency f = 10 kHz for VDD = 2.5 V
and RL → ∞. The voltage gain is Av = −3.7. The
DC components of the signals are VIN = 0.15 V
and VOUT = 1.15 V. b) Frequency response
Av =|Av|∠ϕ of the amplifier for VDD = 2.5 V and
RL→ ∞. Top: Magnitude |Av(f)| of the voltage
gain. The magnitude decreases at 18 dB/dec at
high frequencies, which is very close to the
decrease of 20 dB/dec expected from a

the DC bias voltage and vin(t) is the AC component of the dominant pole at f−3 dB. Bottom: Phase shift
input signal. The amplifier is additionally loaded with RL ϕ (f) between output and input signals
which simulates the input resistance of the next amplifying introduced by the amplifier.
stage. This resistance was either infinite, 30 kΩ, or 10 kΩ,
depending on the measurement.
174
Atomic Imaging and Spectroscopy of Single Layered Materials
with Interrupted Periodicities

Kazu Suenaga
Nanotube Research Center, National Institute of Advanced Industrial Science and Technology (AIST),
Central 5, 1-1-1 Higashi, Tsukuba, 305-8565, Japan
suenaga-kazu@aist.go.jp

The interrupted periodicities (atomic defects or edge structures) are quite important especially in low-
dimensional crystals since they strongly affect their physical and/or chemical properties. In bulk crystals
electron microscopes have been widely used to examine structural defects such as dislocations and grain
boundaries, which are regarded as one- and two-dimensional structural defects, respectively. In contrast,
the individual point defects (zero-dimensional defects, such as mono-vacancies, impurity/dopant atoms)
were believed to be difficult to investigate. Both atomic sensitivity and atomic resolution are required in
the analytical techniques.

After a monovacancy was first observed by TEM and proved to be stable even in low-dimensional carbon
structures [1], studies of point defects in mono-layered materials have become very popular among
scientists. Vacancies and topological defects in graphene are commonly examined at atomic level [2,3,4].
Defects and edge structures in hexagonal boron nitride (h-BN) are also a hot topic among physicists
[5,6,7,8]. Recently, mono-vacancies have been successfully identified in WS2 nano-ribbons [9].

Here we show how HR-TEM and spatially resolved EELS can be applied to the studies of various single-
layered materials with the interrupted periodicities. Atomic defects and edge structures can be
unambiguously identified with the elemental assignment. The inevitable delocalization of EELS signals is
suggested to practically limit the achievement of using EELS for chemical mapping with atomic resolution.
The boron monovacancy (VB) is assigned as a typical point defect by ADF imaging and EELS, and energy-
loss near edge fine structure (ELNES) is used to investigate the electronic states of nitrogen atoms around
the point defect. The work provides an example of spectroscopic imaging based on the scanning
transmission electron microscopy (STEM)-EELS techniques to demonstrate the possibilities of exploring the
electronic states with single atom sensitivity. A JEM-2100F equipped with a delta corrector and cold field
emission gun was operated at 60kV for these spectroscopy experiments [10,11]. A fast Frourier transform
(FFT) of the typical ADF image shows that the microscope can resolve 0.108 nm in the STEM mode (not
shown). The probe current was ~ 40 pA.

Fig. 1 shows an example of atomic defects in CVD graphene. The model structure involves pentagons and
heptagons located at the boundary to accommodate the small angle boundary. A monovacancy in h-BN is
examined by STEM-EELS (Fig. 2). The core-level spectroscopy on the nitrogen atoms at the vicinity of boron
vacancy is successfully made [12].

This work was supported by Japan Science and Technology Agency under the CREST project.
ABSTRACTS
175
 References

[1] A. Hashimoto et al., Nature, 430 (2004) pp.870-873

[2] K. Suenaga et al., Nature Nanotech., 2 (2007) pp.358-360
[3] J. Meyer et al., Nano lett., 8 (2008) pp.3582
[4] C. O. Girit, et al., Science 323, 1705–1708 (2009).
[5] C. Jin et al., Phys. Rev. Lett., 102, 195505 (2009)
[6] J. Meyer et al., Nano Lett., 9, 2683 (2009)
[7] N. Alem et al., Phys. Rev. B 80, 155425 (2009)
[8] O. Krivanek et al., Nature 464, 571-574 (2010)
[9] Z. Liu et al., Nat. Commun. 2, 213 (2011).
[10] T. Sasaki et al., J. Electron Microsc. 59, s7–s13 (2010).
[11] K. Suenaga and M. Koshino, Nature 468, 1088-1090 (2010).
[12] K. Suenaga, H. Kobayashi, and M. Koshino, Phys. Rev. Lett., 108 075501 (2012).

Figures

Figure 1: An example of 5-8-5 defect in graphene. (a) HR-TEM BF image, taken at 120kV. Octagon is almost at centar
between two pentagons at up and down side (b) simulated TEM image and (c) relaxed atomic model. Octagon with yellow
color and pentagon with blue color. Bar = 1nm. JEM 2010F with the CEOS corrector operated at 120kV.
ABSTRACTS

Figure 2: Monovacancy in h-BN layer [13]. (a) ADF image shows a monovacacny in a single layer h-BN. Line-spectrum was
recorded along the yellow line. (b) Schematic presentation (red: nitrogen, blue: boron) of boron monovacancy. (c)
Nitrogen K-edge fine structures extracted from the line-spectrum. Each of three approximately corresponds to the probe
positions marked in (b). A prominent prepeak in the nitrogen K-edge can be found at 392 eV in the spectrum recorded at
the position 2, i.e., near the boron vacancy site.
176
Near 400 GHz World Fastest Graphene RF TransistorFor High
Frequency Nanoelectronics and Circuits CMOS Platform Integration

Chun-Yung (C.Y) Sung

IBM, United States

Graphene possesses great potential for radio frequency (RF) applications such as amplifiers and frequency
mixers, whose performance can greatly benefit from the high carrier velocity of graphene. Ultra-high
carrier mobility has been demonstrated in mechanically exfoliated flakes under ideal conditions (e.g.
suspended graphene at low temperatures) which minimize external perturbations. In reality,
technologically-relevant graphene devices require large-area synthesized graphene supported on and in
contact with a substrate, i.e. under conditions where the graphene channels are inevitably affected by
extrinsic perturbations. With large-area graphene becoming available by either CVD or epitaxial methods,
it is of great importance to build devices from such technologically relevant graphene materials and to
evaluate their performance on high-quality substrates like diamond-like carbon (DLC) and silicon carbide
(SiC). Here we demonstrate RF field-effect transistors (FET) fabricated on wafer-scale CVD and epitaxial
graphene, both achieving record cut-off frequencies surpassing >350 GHz at a scaled channel length of 40
nm. We also conduct a systematic study on the voltage gain and power gain of these graphene transistors,
and demonstrate drastic performance enhancements through improvements in graphene quality, choice
of dielectric materials and optimal doping of the graphene channel. Finally, we demonstrate the first
graphene-based, amplifying integrated circuit, with a gain over 3 dB.

While graphene transistors have proven capable of delivering GHz-range cut-off frequencies, applying the
devices to RF circuits has been largely hindered by the lack of current saturation in the zero band gap
graphene. Herein, the first high-frequency voltage amplifier is demonstrated using large-area chemical
vapor deposition (CVD) grown graphene. The graphene field-effect transistor (GFET) has a 6-finger gate
design with gate length of 500 nm. The graphene common-source amplifier exhibits ~5dB low frequency
gain with the 3dB bandwidth greater than 6 GHz. This AC voltage gain demonstration of a GFET is
attributed to the clear current saturation in the device, which is enabled by an ultrathin gate dielectric (4
nm HfO2) of the embedded gate structures. The device also shows extrinsic transconductance of 1.2
mS/µm at 1 V drain bias, the highest for graphene FETs using large-scale CVD graphene reported to date.
The simulations are in good agreement with the measurements, validating the experimental
demonstration of this graphene-based amplifier. The simulation also shows the device is capable of
voltage amplification for frequencies exceeding 15 GHz. Compared with previously reported graphene
analog circuits that always show the attenuation of the signal, this is the first time an AC gain has been
reported. The nearly-constant frequency doubler performance over such a wide temperature range
indicates that the graphene transconductance in both p and n branches is temperature independent in this
range. To our knowledge, this is the first demonstration of this property in CVD graphene.
ABSTRACTS
177
 Figures

Figure 1: Small-signal current gain |h21| versus Figure 2: The measured voltage gain versus drain
frequency for two 40 nm devices with peak fT of 300 current at 5 MHz with a maximum gain of 3 dB from an
GHz and 350 GHz, also consistent with the value derived integrated circuit of graphene amplifier on wafer-scale
from Gummel’s method shown in the inset. epitaxial graphene on SiC.

(a) (b) (c)

Figure 3: (a) Schematic of graphene IC and the integration flow. The fabricated devices were protected by two layers of
passivation. Finally, to form an RF IC, an inductor was integrated with a FET device. (b) Output characteristics of the same
device. Strong current saturation and desired low gds are achieved. (c) gm, gds, and intrinsic voltage gain (Gin=gm/gds) as
a function of Vds at Vgs=1.2 V.

(a) (b) (c)

Figure 4: (a) Photograph of graphene IC using CVD graphene and embedded gates. Inductors were monolithically
integrated with graphene FETs and the circuit was measured as a frequency doubler. A six-finger device was used in the
ABSTRACTS

circuit. (b) Captured image from the spectrum analyzer during the circuit operation. With input power of 0 dBm at 1GHz,
the conversion gain is ~ -25 dB. (c) Measured frequency doubler performance over temperature for fIN=1GHz. This is an
important advantage of this technology for high-temperature applications.
178
Linear band dispersion in multilayer epitaxial graphene grown
on the SiC(000-1) C face

A. Taleb-Ibrahimi
UR1 CNRS/Synchrotron SOLEIL, St Aubin Gif/Yvette Cedex France

Epitaxial graphene (EG) onto SiC is extremely promising for applications because it makes feasible carbon
electronics while circumventing carbon nanotubes problems, i.e. scalability and contact problems. It is
possible to grow exceptional quality graphene on both Si and C faces of SiC. For multilayer epitaxial
graphene (MEG) grown on the C-face, a unique rotational stacking of the graphene layers causes adjacent
graphene layers to be electronically decoupled. A set of nearly independent linearly dispersing bands
(Dirac cones) at the graphene K-point are observed, where each cone corresponds to an individual macro-
scale graphene sheet. The top layers in MEG are quasi neutral, with the Dirac point within experimental
resolution from the Fermi level (about 10meV). This is in contrast to deviations to the linear dispersion
observed elsewhere for highly doped EG on the Si-face indicating electron-phonon and electron-plasmon
coupling (the Dirac point is 440 meV below EF). We will provide here direct experimental evidence of these
observations using angle-resolved photoemission.

References

[1] Sprinkle, M., Siegel, D., Hu, Y., Hicks, J., Soukiassian, P., Tejeda,A., Taleb-Ibrahimi, A., Le Fevre, P., Bertran,F., Vizzini,
S., Enriquez, H., Chiang, S., Berger, C., De Heer, W., Lanzara, A., Conrad, E.H. Phys Rev Lett, 103, 226803. (2009).
[2] Sprinkle, M., Hicks, J., Tejeda, A., Taleb-Ibrahimi, A., Le Fevre, P., Bertran, F., Tinkey, H., Clark, M. C., Soukiassian, P.,
Martinotti, D., Hass, J., & Conrad, E. H. Journal of Physics D: Applied Physics, 2010, 43(37): 374006.
[3] Hicks, J., Sprinkle, M., Shepperd, K., Wang, F., Tejeda, A., Taleb-Ibrahimi, A., Bertran, F., Le Fevre, P., de Heer, W. A.,
Berger, C., Conrad, E. H. Physical Review B, 2011, 83(20): 205403

ABSTRACTS
179
 Observing early stages of growth and scaling graphene
over 300mm wafers

1 1 1 1 2
Kenneth Teo , Andy Newham , Matthew Cole , Nalin Rupesinghe , Kemal Celebi , Jong Won
2 2
Choi and Hyung Gyu Park
1
AIXTRON, Cambridge, United Kingdom
2
ETH Zurich, Zurich, Switzerland

k.teo@aixtron.com

Here, we present our observations made during the early stages of graphene growth employing a chemical
vapour deposition method with copper catalyst. Spectroscopic monitoring of surface catalysis showed that
graphene crystals evolve from densely distributed nucleation points that interconnect to form large
crystals covering the entire surface. Under certain conditions, secondary nucleation which form a second
layer was observed inside the primary graphene crystals. Kinetics of growth and effective activation energy
for the graphene synthesis will be discussed for a possible rate limiting step of the surface catalytic
synthesis of graphene. Conditions for large-scale synthesis of monolayer graphene will be addressed in this
talk. Growth and characterisation of graphene grown using copper films on silicon dioxide on silicon
substrates were performed. Key considerations for scaling are discussed and graphene growth on the
300mm wafer scale was demonstrated.

Figures

Figure 1: Evolution of graphene domains during growth

ABSTRACTS
180
Figure 2: Growth of graphene onto Cu/SiO2/Si wafers. Clockwise from top left: Raman spectroscopy, 300mm wafer,
AIXTRON BM 300 automated equipment
ABSTRACTS
181
 Photocurrent in graphene n-n' junctions

Maxim Trushin, John Schliemann

University of Regensburg, 93040 Regensburg, Germany
Maxim.Trushin@physik.uni-regensburg.de

The carbon atoms in graphene are arranged in a honeycomb lattice, and due to its two interpenetrating
Bravais sublattices the charge carriers acquire an additional degree of freedom known as pseudospin. The
pseudospin orientation turns out to be coupled with the direction of particle motion in a way similar to the
spin-orbit coupling in semiconductors, see Fig. 1. The pseudospin-dependent selection rule constrains the
possible optical transitions between the valence and conduction bands in the presence of the linearly
polarized light, see Fig. 1. The pseudospin selection rule in optical excitations can be understood from the
effective interaction Hamiltonian which contains a coupling term between the pseudospin operators (Pauli
matrices) and the vector potential characterizing a linearly polarized electromagnetic wave. The carriers
have opposite pseudospin orientations in the valence and conduction bands. The pseudospin flip is
necessary to excite any valence electron to the conduction band as long as momentum transfer is
negligible. To be specific we set linear polarization along x-axis, i. e. the polarization angle is zero, as shown
in Fig. 1. The interaction Hamiltonian is trying to rotate the pseudospin about the polarization direction. If
the pseudospin and polarization direction are parallel with each other then the pseudospin orientation
obviously does not change and the interband transition does not occur. In the opposite case, when the
polarization is normal to the pseudospin orientation, the pseudospin can flip easily and the interband
transition probability is maximal. As consequence the photovoltage measured on the irradiated n-n'
junction depends strongly on the angle between the top contact long edge and light polarization plane.
In contrast to the previous work [1] we employ the Boltzmann equation [2] which includes a built-in
potential U(x) characterizing graphene n-n’ junction as well as the photocarriers’ generation rate due to
the linearly polarized radiation of power W. The resulting photovoltage contains polarization angle
dependent contribution Vosc which reads

Here, the factor 0.023 is the single layer absorption, τ=10−12 s is the photocarriers’ life-time [3], λ is the
radiation wavelength, vF is the Fermi velocity, ΔU is the built-in potential step, μ is the chemical potential
at zero U(x), and θ is the polarization angle. Note, that there is also a term which is independent of θ.
Moreover, an irradiated sample experiences heating and, therefore, the electrons are subject to the
temperature gradient there. The temperature gradient gives rise to the thermoelectric current flow which
is complementary to the photoelectric term. Most important is that the thermoelectric response depends
mostly on the radiation power converted to heating and is not sensitive to any particular light polarization.
In contrast, the photoelectric response does depend on the polarization angle that makes it possible to
separate these two effects in the total response measured. This is schematically shown in Fig. 2.

The model considered above allows making the following predictions: (i) The photoelectric contribution in
ABSTRACTS

the photoresponse oscillates with the polarization angle θ whereas the thermolelectric one is not sensitive
to θ at all. (ii) The amplitude of Vosc increases with the radiation wavelength as λ2. Thus, the
photoelectricity may play a major role in the total photoresponse at larger wavelengths. (iii) The amplitude
logarithmically depends on the potential step ΔU and increases slowly with ΔU as soon as the later
becomes comparable with the initial chemical potential. At the incident radiation power of the order of
100 μW and λ ~ 1000 nm the photovoltage amplitude can be as high as 10 μV .
182
The model can be generalized for graphene p-n junctions. The photovoltage behavior is qualitatively
similar to the one considered above as long as the potential step ΔU is higher than the temperature. We
thank Tim Echtermeyer for the stimulating discussions and fresh experimental data [4].

References

[1] S. Mai, S. V. Syzranov, K. B. Efetov, Phys. Rev. B, 83 (2011), 033402.

[2] M. Trushin and J. Schliemann, EuroPhys. Lett. 96 (2011), 37006.
[3] F. Bonaccorso, Z. Sun, T. Hasan, and A. C. Ferrari, Nat. Photon., 4 (2010), 611.
[4] T. Echtermeyer, priv. comm.

Figures

Figure 1: The pseudospin-dependent selection rule for interband optical excitations in the presence of the
electromagnetic radiation polarized along x-axis (zero polarization angle). The potential profile U(x) forming the junction
is also shown.

Figure 2: Left panel: Relative contributions to the total photoresponse shown schematically. Right panel: The oscillating
contribution Vosc given in Volts per Watt as a function of λ computed from the formula given in the main text. The
potential step is taken to be equal to the chemical potential.
ABSTRACTS
183
 Few-layer graphenes from
ball-milling of graphite with triazine derivatives

a a,b b b a
Ester Vázquez , Verónica León , Mildred Quintana , Maurizio Prato , M. Antonia Herrero
a
Departamento de Química Orgánica, Facultad de Ciencias Químicas-IRICA,
Universidad de Castilla-La Mancha, 13071 Ciudad Real, Spain.
b
Department of Chemical and Pharmaceutical Sciences, University of Trieste,
Piazzale Europa 1, 34127 Trieste, Italy

ester.vazquez@uclm.es

Of the different approaches to produce graphene, the solution-phase techniques [1] present several
advantages, because stable suspensions of graphene can be used for various processing of the material
such as film deposition, surface modification and chemical functionalization, all of which play a crucial role
in exploring their applications. The exfoliation of graphene into solution requires breaking the enormous
van der Waals-like forces between graphite layers. Molecular adsorption on the surface of graphene is a
key step to compensate the attractive interactions between the graphene sheets. [2] Recently, careful
calculations have suggested that aminotriazines are strongly adsorbed on graphite. [3] These compounds
are particularly attractive, because they offer a combination of unusually strong adsorption and
predictable interadsorbate hydrogen bonding which result in the creation of 2D molecular assemblies on
graphite. Charge transfer from graphene to aminotriazines seems to occur in part through the presence of
hydrogen atoms in the substituents

Recently, we have shown that solid phase techniques together with mechanical activation by milling
processes can be used to prepare scalable quantities of functionalized carbon nanostructures.[4] Others
have used ball milling to solubilize nanotubes through the formation of complexes between carbon
nanotubes and various substrates,[5] while wet ball milling (DMF) has produced few layer graphene in
solution.[6] All these results suggest that mechanical activation is a very promising way for modifying
carbon nanostructures.

Herein, we report a simple, practical scalable procedure to produce few-layer graphene sheets using ball-
milling Large quantities of inexpensive materials like graphite and melamine can be used for massive and
fast production of few layer graphenes with a low concentration of defects. The methodology opens the
way for an alternative and efficient processing of graphene materials, such as film deposition and chemical
functionalization these fields.

References

[1] A. A. Green, M. C. Hersam, J. Phys. Chem. Lett., 1, (2010), 544.

[2] C. Backes, F. Hauke, A. Hirsch, Adv. Mat., 23, (2011), 2588.
ABSTRACTS

[3] J. D. Wuest, A. Rochefort, Chem. Commun., 46, (2010), 2923.

[4] N. Rubio, C. Fabbro, M. A. Herrero, A. de la Hoz, M. Meneghetti, J. L. G. Fierro, M. Prato, E. Vazquez, Small, 7, (2011),
665.
[5] A. Ikeda, Y. Tanaka, K. Nobusawa and J. Kikuchi, Langmuir, 23, (2007), 10913.
[6] W. F. Zhao, M. Fang, F. R. Wu, H. Wu, L. W. Wang, G. H. Chen, J. Mater. Chem., 20, (2010) 5817
184
Figures

Figure 1: Schematic illustration for the exfoliation of graphite through ball-milling approach

ABSTRACTS
185
 Reconstruction dependent interaction at the
Graphene/ 6H-SiC(000-1) interface probed by STM and ab-initio
calculations.

J-Y Veuillen, F. Hiebel, P. Mallet, L. Magaud

Institut Néel, CNRS-UJF, Boîte Postale 166, 38042 Grenoble, France
jean-yves.veuillen@grenoble.cnrs.fr

Graphene single and multilayers grown by thermal decomposition on the 6H(4H)-SiC(000-1) face (in short
SiC-C face) have demonstrated physical properties similar to those expected for ideal graphene ([1], see
[2] for a review) and thus represent an appealing technique to prepare wafer scale graphene films directly
on an insulating substrate. The structure of the interface has a determinant influence on the electronic
properties of such samples, as demonstrated in the well documented case of graphene grown on the SiC-Si
face: a strong graphene substrate interaction leads to highly perturbed first carbon plane (the so-called
buffer layer) which lacks the characteristics Dirac cones of the material, and charge transfer results in a
significant doping of the successive graphene planes. Moreover, the interfacial coupling is thought to be
responsible for the unique orientation of the carbon planes found in multilayers on the Si face by imposing
the orientation of each newly formed graphitic layer.
In spite of its relevance, the structure of the interface is not well established for the SiC-C face. Recent
reports suggest that it depends on the growth conditions [3], and that it can be heterogeneous [4]. To
address this point we have performed Scanning Tunneling Micoscopy (STM) and Spectroscopy (STS)
experiments on partially graphitized samples prepared in-situ under UHV, coupled with ab-initio
calculations. From an experimental point of view, the so called “transparency” of graphene [5] allows the
investigation of the (buried) substrate structure at the interface from high-bias STM images whereas the
low energy electronic structure of the graphene layer can be probed in low bias images [6]. Thus a
complete description of the electronic structure of the interface can be achieved from variable bias
STM/STS data.
Starting from the clean SiC(3x3) surface, we first obtain monolayer graphene islands on top of the
unperturbed SiC(3x3) reconstruction (G/3x3 islands). At variance with the case of the Si face the
(azimuthal) orientation of the graphene layer varies from one island to the other, i.e. a “rotational
disorder” is found in the samples. No significant perturbations of either the substrate or the graphene
layer structures were observed on G/3x3 islands with different orientations [7] (see Figure 1 as an
example). This indicates that the graphene-SiC(3x3) interaction is quite weak, leading to an almost ideal
system [7]. We shall present STM/STS measurements which allow the determination of parameters
(graphene doping and interface defect density) relevant to the physical properties of the system [8].
Finally, owing to the coexistence of G/3x3 islands with area of bare SiC(3x3) surfaces we could perform a
quantitative study of the high bias “transparency” of graphene, which indicates an enhancement of the
tunnelling probability from/to the substrate surface states when they are buried below the carbon plane
[8].
Further annealing below the graphitization temperature leads to the selective transformation below the
ABSTRACTS

graphene layer of the SiC(3x3) surface reconstruction into the SiC(2x2) one, leading to G/2x2 islands. This
transformation results in an increase of the graphene substrate interaction [9]. The atomic structure of the
SiC(2x2) surface is a simple adatom-restatom structure (see Figure 2-a), and the graphene-substrate
coupling mostly involves Si adatoms [10]. The lattice mismatch and rotational disorder between graphene
and SiC gives rise to moiré patterns [7], and thus the graphene-adatom stacking varies laterally within the
186
period of the moiré. We shall present STM/STS data which show that the adatom graphene coupling
depends on the local configuration, the energy and broadening of the adatom state being different for e.g.
top and hollow graphene sites. This result can be qualitatively understood in the framework of a simple
(non interacting) Anderson impurity model (see e.g. [11]). This stacking dependent interaction is
correlated to perturbations in the low energy local density of states of graphene (see Figure 2-b). Ab-initio
calculations allow a quantitative analysis of the full interface electronic structure in the case of small
commensurate supercells.

References

[1] C. Berger et al. Science 312 (2006) 1191

[2] W. de Heer et al., J. Phys. D: Appl. Phys. 43 (2010) 374007
[3] N. Srivastava, Guowei He, Luxmi, and R. M. Feenstra, Phys. Rev. B 85 (2012) 041404(R)
[4] C. Mathieu et al., Phys. Rev. B 83 (2011) 235436
[5] G. M. Rutter et al., Phys. Rev. B 76 (2007) 235416
[6] P. Mallet et al., Phys. Rev. B 76 (2007) 041403(R)
[7] F. Hiebel, P. Mallet, L. Magaud, and J.-Y. Veuillen, Phys. Rev. B 80 (2009) 235429
[8] F. Hiebel, L. Magaud, P. Mallet and J-Y Veuillen, to appear in J. Phys. D: Appl. Phys. (2012)
[9] F. Hiebel, P. Mallet, F. Varchon, L. Magaud and J-Y Veuillen, Phys. Rev. B 78 (2008) 153412[
[10] L. Magaud, F. Hiebel, F. Varchon, P. Mallet, and J.-Y. Veuillen, Phys. Rev. B 79 (2009)161405(R)
[11] T.O. Wehling, M.I. Katsnelson and A.I. Lichtenstein, Chem. Phys. Lett. 476 (2009) 125

Figures

Figure 1: STM images of the same spot on a G/3x3 island, images size: 7.5x7.5 nm². a) High bias image (sample bias: -2.0V)
showing the structure of the SiC(3x3) reconstruction through the graphene layer. b) Low bias image (sample bias -50mV)
showing the low energy features of graphene: honeycomb atomic contrast (left) superimposed to “standing wave
patterns” due to electron scattering at the island edge (right).
ABSTRACTS

Figure2 : STM images of the same spot on a G/2x2 island, images size: 7.5x7.5 nm². a) High bias image (sample bias: +2.5
V) showing the adatoms of the SiC(2x2) reconstruction through the graphene layer. b) Low bias image (sample bias -
50mV) showing the perturbation to the low energy local density of state of graphene in G/2x2 islands. The perturbation
leads to “switched-off” graphene atoms (some indicated by arrows), which do not show up in a weakly interacting system
(e. g. G/3x3, figure 1-b). The perturbation is modulated in space with the (pseudo) period of the moiré pattern.
187
 Cell uptake survey of functionalized Graphene for
Near-Infrared Mediated tumor Hyperthermia

M.Vila1,2, M.T.Portolés3, P.A.A.P.Marques4, M.J.Feito3,M.C.Matesanz3,C.Ramírez-Santillán3, G. Gonçalves4,

S.M.A. Cruz4, A.Nieto-Peña1,2 and M.Vallet-Regi1,2
1
Inorganic and Bioinorganic Chemistry Dept. Universidad Complutense de Madrid. 28040 Spain
2
Centro de Investigación Biomédica en Red. Bioingeniería, Biomateriales y Nanomedicina, CIBER-BBN
3
Department of Biochemistry and Molecular Biology I, Universidad Complutense Madrid, 28040, Spain,
4
TEMA-NRD, Mechanical Engineering Department, University of Aveiro, 3810-193 Aveiro, Portugal

mvila@farm.ucm.es

The exciting advances in the preparation of nanosystems with applications in the medical field have lead
to new challenges in the design of smart materials capable of meeting the clinical demands. Therefore, the
application of nanotechnology for treatment, diagnosis, monitoring and control of biological systems
(recently denominated as nanomedicine) has been declared as one of the most promising fields of
research over the last decade. Mainly after finding that the introduction of nanosystems into living cells is
possible by shuttling various cargoes across cellular membranes, without producing cytotoxicity.

Nanoparticles have been proposed for locally releasing highly toxic drugs directly into tumors, while
reducing the unwanted side effects of aggressive treatments, and to target tumors using the intrinsic
capacities of different nanomaterials applied as new treatments. For example, their capacity to induce
localized heating within tumors is being exhaustively explored. Approaches to nanoparticlemediated
thermal therapy include absorption of infrared light, radio frequency ablation, and magnetically-induced
heating [1].

Among carbon based materials, following close and taking over carbon nanotubes, graphene represents
one of the most promising “nanoparticle” of the last few years. More specifically, graphene oxide (GO), it
is a small two-dimensional shape nanoparticle [2], that offers a new class of solutiondispersible
polyaromatic platform for performing chemistry and which aspect ratio make it incomparable to any other
previously suggested one. Besides all its properties, its low cost, large production scale and easy-
processing, makes this nanomaterial a promising nanoparticle for medical application were a large scale
production is needed. Its unique structure, with all atoms exposed on its surface, has an ultra-high surface
area available for efficient loading of aromatic drug molecules, useful for applications in drug delivery.
Also, its strong NIR optical absorption ability 700-1100 nm (“therapeutical window”, where it is a non
invasive, harmless and skin penetrating irradiation) range is particularly attractive for the induction of cells
hyperthermia in tumor treatments as a minimally invasive alternative to surgery (Photothermal therapy).
This therapy is based on the transfer of energy produced during the irradiation of a material, after being
internalized by a cell, generating vibrational energy, thus generating heat sufficient for cell destruction.[3]

With the purpose of understanding the biological response of cells to this graphene uptake, a complete in
ABSTRACTS

vitro biocompatibility and internalizing kinetics study of GO sheets has been performed in a survey of
different kind of cells: osteoblast, preosteoblasts, fibroblast, and macrophages.

GO nanosheets of c.a. 100 nm have been obtained from exfoliation of high purity graphite by a modified
Hummers method [4] see Fig. 1, and functionalized in its surface with non-toxic and nonimmunogenic
polymers to avoid the intercession with cellular functions or target immunogenicities and to decrease
188
aggregation. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) were used to
measure the thickness and size of the synthesized GO nanosheets. Moreover, the GO particles have been
labeled with a fluorescent marker (fluorescein FITC) as this is an important requisite for their in vitro
studies with cells both for the application of Confocal Microscopy and Flow Cytometry to follow uptake
and possible degradation within cells.

Different cell types have been cultured for several incubation periods in the presence of 0.075 mg/mL GO
solutions dispersed in supplemented Dulbecco´s Modified Eagle Medium (DMEM). GO-FITC uptake
kinetics, cell morphology, viability and proliferation, lactate dehydrogenase release were evaluated in vitro
by flow cytometry, and confocal microscopy. Incorporation assays of GO-FITC in the presence of Trypan
Blue, in order to quench the extracellular fluorescence, demonstrate the intracellular location of this
material.

Results show that cell viability measured by propidium iodide exclusion is always above 95% for all the
cells type studied after 30, 60 and 150 min and 1 day, suggesting that there is not induction of apoptosis or
necrosis by the nanomaterial. As an important discovery, GO uptake kinetics revealed several differences
in uptake speed as a function of the type of cell involved. It has been demonstrated that, for example in
the case of osteoblast like cells (see Fig.2), uptake kinetics are faster suggesting that GO can more easily
penetrate the cell membrane without resulting in greater cell membrane damage. Our studies have clearly
demonstrated that the uptake of GO nanosheets by the cells plays an extremely important role in how
efficient and controlled the treatments would be, and has given light to the future definition of timing
parameters and selective uptake control by certain type of cells in order to achieve an effective therapy.

References

[1] F.A. Jolesz, et al., Cancer J.2002, , 8, S100M.

[2] Melucci, et al., J. Mater. Chem. 2010. 20, 9052
[3] Z.M. Markovic et al., Biomaterials 2011,32, 1121
[4] G. Gonçalves, et al, Chem. Mater. 2009, 21, 4796

Figures

Figure 1: Scheme of GO exfoliation Figure 2: Confocal Microscopy image of

osteoblast-like cells (MC3T3). Green
ABSTRACTS

fluorescence due to fluorescein labeled GO

excitation.
189
 Defects, Dislocations and Disorder in
Graphene at the Atomic Level

R Jamie Warner and Angus Kirkland

Department of Materials, University of Oxford, Oxford, UK

Jamie.warner@materials.ox.ac.uk

The atomic structure of graphitic nanomaterials can be directly image using high resolution transmission
electron microscopy (HRTEM) with spherical aberration correctors (1,2). Using accelerating voltages of 80
kV limits damage to graphene and nanotubes and enables studies of how the atoms are arranged.
However, in order to fully resolve the atomic structure of graphene, chromatic aberration effects need to
be addressed. I shall present results on defects, dislocations and disorder in graphene obtained with
Oxford’s JEOL 2200MCO HRTEM, equipped with probe and image spherical aberration correctors, plus a
new double-Wien filter monochromator. The accelerating voltage is reduced to 80 kV, and we can achieve
80 picometer spatial resolution.

Using this sub-Angstrom resolution we have resolved several key structures associated with plastic
deformation, such as edge dislocations. We have fully resolved 5 and 7 member rings, shown in figure 1,
and reveal that C-C bond elongation and compression occurs in specific locations on edge glide
dislocations. I will show how we can intentionally create defects and disorder in pristine graphene with an
accuracy of 10 nm. Some of these highly strained regions of disorder relax back to pristine graphene,
whilst others remain stable.

We have also shown that trilayer graphene grown by chemical vapour deposition can adopt ABC stacking. I
will present a full analysis of the unique atomic structure of Rhombohedral stacked trilayer graphene.

These results demonstrate that improved resolution in HRTEM can enable new insights into the atomic
structure of defects, dislocations, disorder, and also the layer stacking in graphene and few layer graphene
sheets.

References

[1] J. H. Warner, M. H. Rümmeli, L. Ge, T. Gemming, B. Montanari, N. M. Harrison, B. Büchner, G. A. D. Briggs, Structural
transformations in graphene studied with high spatial and fast temporal resolution, Nature Nanotechnology, 4, p500
(2009)
[2] J. H. Warner, N. P. Young, A. I. Kirkland, G. A. D. Briggs, Resolving Strain in Carbon Nanotubes at the Atomic Level,
Nature Materials, 10, 958-962, (2011)
ABSTRACTS
190
Figures

Figure 1: (a) Aberration-corrected HRTEM image (with monochromation of electron beam) of monolayer graphene
showing two edge glide dislocations, plus the elastic strain induced in the lattice. (b) Atomic model representation of (a).

ABSTRACTS
191
 Manifestation of electron-electron interaction in the
magnetoresistance of graphene

1 1 2,3 2,4,5
Johannes Jobst , Daniel Waldmann , Igor V. Gornyi , Alexander D. Mirlin , and
1
Heiko B. Weber
1
Lehrstuhl für Angewandte Physik, Universität Erlangen-Nürnberg, Erlangen, Germany
2
Institut für Nanotechnologie, Karlsruhe Institute of Technology, Karlsruhe, Germany
3
A.F. Ioffe Physico-Technical Institute, St. Petersburg, Russia
4
Inst. für Theorie der kondensierten Materie, Karlsruhe Institute of Technology, Karlsruhe, Germany
5
Petersburg Nuclear Physics Institute, St. Petersburg, Russia
heiko.weber@physik.uni-erlangen.de

We investigate the magnetotransport in large-area graphene Hall bars epitaxially grown on silicon carbide
[1]. In the intermediate field regime between weak localization and Landau quantization the observed
temperature-dependent parabolic magnetoresistivity (MR) is a manifestation of the electron-electron
interaction (EEI). Using the scattering times gained from a detailed analysis of the weak localization
anomaly, we can consistently describe the data with a model for diffusive (magneto)transport. We find
excellent agreement between the experimentally observed temperature dependence of MR and the
theory of EEI in the diffusive regime. We can further assign a temperature-driven crossover to the
reduction of the multiplet modes contributing to EEI from 7 to 3 due to intervalley scattering. In addition,
we find a temperature independent ballistic contribution to the MR in classically strong magnetic fields.
The compelling similarity of recent experiments [2] (which were attributed to Kondo physics) to the well-
controlled corrections due to EEI is critically discussed.

References

[1] J. Jobst, D. Waldmann, I. V. Gornyi, A. D. Mirlin, and H. B. Weber: arXiv:1110.5893v2, accepted for publication in
Phys. Rev. Lett.
[2] J.-H. Chen, L. Li, W.G. Cullen, E. D. Williams, and M. S. Fuhrer, Nature Physics 7, (2011) 535–538

Figures
ABSTRACTS

Figure 1: a The magnetoresistivity displays a parabolic magnetic field dependence in between the weak localization and
the Landau quantization regime. Its temperature dependent part is caused by electron-electron interaction. A detailed
analysis displays a consistent description of the purely diffusive regime at not too high fields, and b a graphene-specific
crossover to a higher number of contributing multiplet channels. Further, a crossover in strong magnetic fields (|B|>5T) is
observed.
192
Modeling Electronic Properties
of Single-layer and Multilayer Graphene

Shengjun Yuan, Mikhail I. Katsnelson

Institute for Molecules and Materials, Radboud University of Nijmegen, NL-6525AJ Nijmegen, The Netherlands
s.yuan@science.ru.nl

Recent experimental realizations of bilayer and trilayer graphene have opened the possibility of exploring
their intriguing electronic properties, which depend dramatically on the stacking sequence of the
graphene layers. It has been demonstrated that the band gap can be tuned from 0 to several hundred meV
by applying voltage to a dual-gate bilayer or ABC-stacked trilayer graphene field-effect transistor (FET) at
room temperature. These experimental observations are important for the applications of graphene in
future electronics.

Just like the single-layer graphene, the bilayer and trilayer graphene samples in the real experiments
always have different kinds of disorder or impurities, such as ripples, adatoms, admolecules, etc. One of
the most important problems in graphene physics is to understand the effect of these imperfections on
the electronic structure and transport properties, especially for the cases of gap opening under the
perpendicular electronic field. Motivated by recent experiments, we performed a systemic study of the
effects of different types of disorder or impurities to the electronic properties of single-layer and (gated or
ungated) multilayer (including bilayer and trilayer) graphene [1-9].

We study this issue by direct numerical simulations of electrons on a honeycomb lattice in the framework
of full pi-band tight-binding model. The magnetic field is introduced by means of the Peierls substitution.
Numerical calculations based on exact diagonalization can only treat samples with relative small number
of sites. For large graphene sheet with millions of atoms, the numerical calculation of an important
property, the density of states (DOS), is performed by the time-evolution method. The time-evolution
method is based on numerical solution of time-dependent Schrödinger equation with additional averaging
over random superposition of basis states. We further extend this method to the calculation of various
quantities by using the Kubo formula, such as the static and dynamical conductivity, polarization function,
dielectric function, response function, and energy loss function. The effect of electron-electron interaction
is considered within the random phase approximation (RPA). Another extension of the time-evolution
method yields the quasieigenstate, a superposition of degenerate energy eigenstates. The Klein tunneling
and quantum interference (Aharonov-Bohm effect) are studied by direct simulation of the wave packet
propagation. Our numerical method allow us to carry out calculations for rather large systems, up to
hundreds of millions of sites, with a computational effort that increases only linearly with the system size.
ABSTRACTS
193
 References

[1] S. Yuan, H. De Raedt, and M. I. Katsnelson, Phys. Rev. B, 82 (2010) 115448.

[2] S. Yuan, H. De Raedt, and M. I. Katsnelson, Phys. Rev. B, 82 (2010) 235409.
[3] S. Yuan, R. Roldán, and M. I. Katsnelson, Phys. Rev. B, 84 (2011) 035439.
[4] S. Yuan, R. Roldán, and M. I. Katsnelson, Phys. Rev. B, 84 (2011) 125455.
[5] S. Yuan, R. Roldán, H. De Raedt, and M. I. Katsnelson, Phys. Rev. B, 84 (2011) 195418.
[6] T. O. Wehling, S. Yuan, A. I. Lichtenstein, A. K. Geim and M. I. Katsnelson, Phys. Rev. Lett., 105 (2010) 056802.
[7] R. R. Nair, W. C. Ren, R. Jalil, I. Riaz, V. G. Kravets, L. Britnell, P. Blake, F. Schedin, A. S. Mayorov, S. Yuan, M. I.
Katsnelson, H. M. Cheng, W. Strupinski, L. G. Bulusheva, A. V. Okotrub, I. V. Grigorieva, A. N. Grigorenko, K. S.
Novoselov, A. K. Geim, Small, 6 (2010) 2877.
[8] A. Singha, M. Gibertini, B. Karmakar, S. Yuan, M. Polini, G. Vignale, M.I. Katsnelson, A. Pinczuk, L.N. Pfeiffer, K.W.
West, and V. Pellegrini, Science, 332 (2011) 1176.
[9] S. Yuan, R. Roldán, and M. I. Katsnelson, arXiv:1201.4454
ABSTRACTS
194
Tri-layer enriched graphene sample by mechanochemical exfoliation
of graphite: A one-step route for the production, processing and
deposition as transparent films.

1 1 1 2
Aldo J.G. Zarbin , Rodrigo V. Salvatierra , Sergio H. Domingues , Marcela M. Oliveira
1
Department of Chemistry, Federal University of Paraná (UFPR), Curitiba-PR, Brazil.
2
Department of Chemistry and Biology, Technological Federal University of Paraná (UTFPR), Curitiba-PR, Brazil.

aldozarbin@ufpr.br

Several efforts have been made in the last few years to produce graphene with yields high enough to be
viable for scalable manufacturing. The majority of these efforts, however, resulted in graphene that was
lacking in structural integrity or yield or purity. Besides the search for efficient bulk production methods
for high-quality graphene samples, there are other important challenges in the field: one of them is related
to the development of efficient processing routes to graphene. Graphene is a promising candidate for the
next-generation opto-electronic devices, and these types of applications require the fabrication of large-
scale, transparent thin films of graphene onto a number of different types of substrates, including plastics,
flexible and stretchable substrates. Another challenge is the development of synthetic routes to produce
size- and layer-monodispersed graphene.

We report here a novel route for the production of trilayer enriched graphene samples, obtained from
graphite flakes, in which both the synthesis and processing as a transparent thin film (easily transferred to
arbitrary substrates) are solved together in one single pot. The starting material should be any type of
graphite sample, onto which a mechanical exfoliation processes are performed, followed by
chemical/thermal exfoliation, yielding few-layer graphene (FLG) flakes. The chemical/thermal exfoliation is
performed in a water/oil biphasic system in which the resulting FLG spontaneously self-assembles at the
water/oil interface as a thin film that is easily transferred to an arbitrary substrate. The whole process
consists in a mechanical peeling of graphite by rubbing it on the surface of a magnesium foil. The
magnesium holding the peeled graphite is subsequently mixed to a heterogeneous liquid-liquid mixture
formed from a toluene/aqueous hydrochloric acid solution under a ultrasonic bath. Immediately after the
contact with the aqueous acid solution, the magnesium foil dissolves through a highly exothermic
reaction. The carbonaceous material (characterized as FLG) remains dispersed in the water/toluene
emulsion, and spontaneously agglomerates into a continuous and homogenous film located at the
toluene/water interface, that can be easily transferred to an arbitrary substrate.

Figure 1a shows films deposited onto glass substrates (upper) and plastic substrates (bottom). The
flexibility of the film on plastic substrate can be seen in Figure 1b. The film presents excellent optical
transparencies (90% at 550 nm). The occurrence of FLG was confirmed by TEM, Electron Difraction and
Raman spectroscopy. By analyzing 100 Raman spectra collected at different samples we generate
occurrence statistics and estimate that our sample is composed of 59% of tri-layer AB-stacked graphene,
which is one of the most efficient layer-controlled syntheses of tri-layer FLG described to date.
ABSTRACTS

The authors acknowledge the financial support of CNPq, NENNAM (Pronex-F.Araucária/CNPq), Brazilian
Network on Carbon Nanotubes Research (CNPq) and the National Institute of Science and Technology of
Carbon Nanomaterials (INCT-Nanocarbono). We also thank LME-UFPR for the TEM images. RVS and SHD
thanks CNPq for the fellowship.
195
 Figures

Figure 1: A photograph of transparent graphene films deposited on quartz substrates (upper) and plastic (PET) substrates
(bottom). For the quartz substrate from the left to the right it is shown the substrate itself (with no film deposited), and
films prepared with 5 cm (middle) or 10 cm (right) of graphene. For the plastic substrate from the left to the right it is
shown the substrate itself (with no film deposited) and a film deposited starting from 5 cm of magnesium foil. (b) A
picture of the flexibility of the graphene film on the PET substrate.
ABSTRACTS
196
Selective generation of Dirac-Fermi polarons
at graphene edges and atomic vacancies

Xi Zhang, Changqing Sun

School of Electric & Electronic Engineering, Nanyang Technological Univeristy, Singapore
zh0005xi@e.ntu.edu.sg

The generation and hydrogen modulation of the massless[1], magnetic[2], and mobile Dirac-Fermi
polarons (DFPs) surrounding atomic vacancies at graphite surface and at edges of graphene nanoribbons
(GNR) are indeed fascinating with mechanisms far from clear. Here we show that an incorporation of the
bond order-length-strength (BOLS) correlation[3] into the spin-polarized tight-binding (TB) method with
the combination of the density-functional theory calculations have enabled the clarification of the
concerns.

We found that: i) the DFPs with high-spin-density at the zigzag-GNR and at the vacancies result from the
isolation and polarization of the dangling -bond electrons of identical distance along the edges by the
under-coordination-induced local densification and quantum entrapment of the core and bonding
electrons; ii) the pseudo-π-bond formation between the nearest dangling σ-bond electrons along the
armchair-GNR and the reconstructed-zigzag-GNR edges prevents, however, DFPs from being formed at
these edges; and, iii) hydrogenation reduces the spin density substantially and turns the asymmetric
dumb-bell-like sp2 into the spherical-like pz charge density of the zigzag-GNR edge and vacancy. A further
photoelectron spectroscopic purification[4] has confirmed the origin and consequence of the DFPs
generated at graphite surface atomic vacancies.

References

[1] Soldano, C., A. Mahmood, and E. Dujardin, Carbon, 8(2010), 2127-2150.

[2] Cervenka, J., M.I. Katsnelson, and C.F.J. Flipse, Nature Phys., 11(2009), 840-844.
[3] Zhang, X., et al., Nanoscale, (2010), 2160-2163.
[4] Sun, C.Q., Nanoscale. 10(2010), 1930-61.
ABSTRACTS
197
 Figures

Figure 1: Comparison of the purified XPS C 1s spectrum of graphite surface with and without vacancy defects showing that
bonds near to defects are shorter and stronger than those at the surface. The P, TS, and TD denotes, respectively, the
DFPs screened, undercoordination-induced quantum entrapment states of the outermost two atomic layers of surface
skin (z~ 3.2) and sites surrounding vacancy defects (z~ 2.5); D and B indicates the bulk position of diamond (z =12) and
graphite (z = 5.335). The valleys centered at 284.2(z = 5.35) and 284.4 eV(z = 4) correspond, respectively, to the removed
obvious graphite bulk and surface information. Indicated numbers are the effective z values.
ABSTRACTS

Figure 2: Comparison of the DFT-derived local spin-density contour and the BOLS-TB derived 3D plots of local spin density
of occupied states for (a) vacAGNR, (b) H-vacAGNR, (c) ZGNR, (d) H-ZGNR. The Dx (x = a, v, r, z) represents the dangling sp2
electron states indicated using red arrows. The dangling sp2 and the pz electron, contributes to a strong dumbbell-shaped
local antiferromagnetism and a weak spherical spin, respectively. The sites of group I show a much higher spin density
2
than group II. Hydrogenation tends more to interact and pair up the dangling sp electron than the pz electrons.
198
Graphene films synthesized via CVD

A. Zurutuza
Graphenea, San Sebastian, Spain

Graphene seems to be the new wonder material and as such could be potentially applied in many different
fields. Depending on the application the graphene format can vary from powder/flake to homogeneous
film form. The powder form could meet large volume/weight requirements and can be obtained from
graphite. While the large area graphene films can be obtained using chemical vapor deposition (CVD)
methods on a metal catalyst such as copper [1]. The synthesis of the graphene film is only the first step
since it has to be typically transferred onto insulating or similar substrates for subsequent characterization
or device fabrication. The importance of this transfer process is usually underestimated and if not done
with care it can end up damaging the graphene and in turn its performance.

The synthesis of graphene films via CVD will be described. After a successful transfer of monolayer and
bilayer graphene films onto the required substrates; the characterization via Raman, high resolution and
scanning mode TEM will be presented. Suspended graphene samples were required in order to determine
the grain diffraction pattern [2], the number of graphene layers and the orientation/stacking between the
different layers [3,4] using TEM. Even if the preparation of suspended graphene samples is not
straightforward the amount of information that can be extracted from this characterization technique is
extremely valuable.

References

[3] X. Li, et al Science 324, 1312 (2009).

[4] P.Y. Huang et al Nature 454, 390 (2011).
[5] H.J. Park et al Carbon 48, 1088 (2010).
[6] J.C. Meyer et al Solid State Commun. 143, 101 (2007). ABSTRACTS
199
POSTERS
 Posters - Alphabetical Order (187)

Only Posters submitted by registered participants are listed below. Last update (16/03/2012)

(Please, find your final poster number by looking up your name in the Author Index displayed in the
Registration and the Poster Exhibition Areas)

Student
Presenting Author Country Topic Poster Title
Senior

Growth, synthesis Studies of Isocyanate oligomer mixed with

Agalou Konstantinos Italy Student
techniques and integration Graphene Oxide
methods
Growth, synthesis CVD grown graphene evaluated with Raman and
Ahlberg Patrik Sweden Student
techniques and integration optical microscope
methods
Ahlskog Markus Finland Other 2 dimensional AFM-studies of humidity dependence of friction in Senior
materials graphene and other 2D materials

Growth, synthesis Computer Simulation of Epitaxial Graphene

Alekseyev Nick Russia techniques and integration Assembly on Silicon Carbide Surface with Using Senior
methods Semi-Empirical Quantum Chemistry Methods

Alexeev Arseny United Quantum transport Two-phonon scattering in graphene in the Student
Kingdom quantum Hall regime

Alonso Pruneda Miguel Spain Other 2 dimensional Magnetoelectric and Flexomagnetic effects in Senior
materials hybrid C/BN nanostructures
Alvarez Patricia Spain Chemistry of Graphene Different chemical approaches to produce Senior
graphene derivatives

Applications (gaz sensors, Advantage of few-layer graphene in comparison

Antonova Irina Russia Senior
composites, nanoelectronic with graphene for applications
devices...)
Antonova Irina Russia Chemistry of Graphene Fluorographene with nanoswell surface relief Senior
obtained by hydrofluoric acid treatment

Charge transfer engineering in graphene

Archambault Chloé Canada Chemistry of Graphene Student
nanoribbons using metallic contacts and organic
adsorbed layers
Applications (gaz sensors, Emulsion mixing technique for preparation of
Arzac Alejandro Spain Student
composites, nanoelectronic poly(buthylacrylate/methylmethacrylate)/graphe
devices...) ne electrically conductive composite films
Few layer graphene decorated with Pd
Bacsa Revathi France Chemistry of Graphene nanoparticles: synthesis, characterisation and Senior
catalytic applications in the electrochemical
oxidation of alcohols
United Development of a technique based on methylene
POSTERS

Baker Jenny Chemistry of Graphene Student

Kingdom blue for characterizing specific surface area of
graphenes and other carbon nanostructures

Baldwin Jack United Quantum transport A generalised, tight-binding transport model Student
Kingdom description for random edge-defected ZGNRs
203
 Student
Presenting Author Country Topic Poster Title
Senior

Growth, synthesis Graphene research in Lithuania with subsequent

Barkauskas Jurgis Lithuania Senior
techniques and integration application in bioanalysis, energy storage and
methods optical materials

United Growth, synthesis

Bayer Bernhard In-situ Characterization of Graphene Growth Senior
Kingdom techniques and integration
methods
Bending Simon United Quantum transport Superconductivity in Two-dimensional Crystals Senior
Kingdom

Growth, synthesis Large area Micro- and Nanostructuring of

Bergmair Iris Austria Senior
techniques and integration Graphene
methods
Applications (gaz sensors, Assembling graphene with diamond as novel
Bergonzo Philippe France Senior
composites, nanoelectronic platforms for biointerfacing and photovoltaics
devices...)
Bhandari Sagar United States Spectrocopies and Direct Imaging of atomic scale ripples in few-layer Student
microscopies graphene

Bianco Giuseppe Italy Chemistry of Graphene Plasmonic gold nanoparticle deposition on Senior
Valerio pristine and functionalized graphene

Applications (gaz sensors, Gate Control of Nonlinear Characteristics in

Bin Hashim Abdul Manaf Malaysia Student
composites, nanoelectronic Chemically Doped Graphene Three-Branch
devices...) Junction Device
Blaszczyk Jan Poland Spectrocopies and Interaction of epitaxial graphene with SiC Student
microscopies substrate studied by Raman spectroscopy

Applications (gaz sensors,

Boscá Alberto Spain Ambient p-doping of CVD graphene Student
composites, nanoelectronic
devices...)
Boukhicha Mohamed France Other 2 dimensional Raman scattering in single layer MoS2: Phonon Student
materials Bandwidths, zone edge phonons and 2D effects

Bukhvalov Danil Korea Chemistry of Graphene Catalytic properties of imperfect graphene: first Senior
principles modeling
Bundesmann Jan Germany Quantum transport Spin relaxation in graphene induced by adatoms Student

Applications (gaz sensors, Improvement of thermal conductivity in graphene

Bustero Izaskun Spain Senior
composites, nanoelectronic reinforced cyanate ester resin
devices...)
Candini Andrea Italy Magnetism and Spintronics Hybrid Graphene – Molecular Magnet Devices for Senior
Spintronics
Ceccato Marcel Denmark Chemistry of Graphene Insights into the chemical modification of Senior
graphene using diazonium salts

Growth, synthesis Preparation of Graphene Sheets from Expandable

Celik Yasemin Turkey Student
techniques and integration Graphite and Their Utilization in Ceramic-Matrix
methods Composites
Applications (gaz sensors, Field-Effect Sensor Based on Graphene Thin Films
Chen Si Sweden Student
POSTERS

composites, nanoelectronic Fabricated by Layer-by-Layer Stacking

devices...)
Applications (gaz sensors, Formation of quantum dots by "landing" of
Chernozatonskii Leonid Russia Senior
composites, nanoelectronic hydrogen atoms on graphene nanoribbons –
devices...) modeling of process, structures and properties
204
 Student
Presenting Author Country Topic Poster Title
Senior

Chshiev Mairbek France Magnetism and Spintronics Magnetic insulator proximity induced spin- Senior
polarization in graphene

Ciuk Tymoteusz Poland Magnetism and Spintronics Contactless magnetoresistance in large area CVD Student
graphene grown on SiC substrates

Connolly Malcolm United Quantum transport Quantized Charge Pumping in Graphene Senior
Kingdom
Crassee Iris Switzerland Spectrocopies and Intrinsic terahertz magnetoplasmons in Student
microscopies monolayer graphene
Cruz Sandra Portugal Spectrocopies and Synthesis of graphene-based nanocomposites as Student
microscopies SERS substrates in biodetection
Spectrocopies and Scanning tunnelling spectroscopy investigations of
Dabrowski Pawel Poland Senior
microscopies chemical composition of graphene/Cu(111)
interface
Declerck Xavier Belgium Spectrocopies and Boron and nitrogen doping from first principles Student
microscopies
Dollfus Philippe France Quantum transport Effect of negative differential conductance in Senior
graphene Esaki diodes: GNR or GNM?
Downing Charles United Quantum transport Zero-energy states in graphene waveguides, Student
Kingdom quantum dots and rings
Drexler Christoph Germany Spectrocopies and Terahertz Radiation Induced Edge Currents in Student
microscopies Graphene
Ellis Amanda Australia Chemistry of Graphene Graphene Oxide Flower-like Microstructures from Senior
Carbon Nanotubes
Erts Donats Latvia Nanoelectromechanical Application of Ge nanowire mass sensor for Senior
systems graphene exfoliation
Fedor Tkatschenko Germany Quantum transport Superlattice Effects on Transport in Graphene and Student
Graphene Nanoribbons
Growth, synthesis Cu(111) epitaxial films on mica(001) substrate
Fujii Takeshi Japan Senior
techniques and integration used for high quality graphene growth by
methods chemical vapor deposition
Gajewski Krzysztof Poland Spectrocopies and SPM investigations of electrical properties of Student
microscopies graphene nanostructures on 6H-SiC substrate

Growth, synthesis Epitaxial Growth of Single- and Few-layer

Gao Jianhua Japan Senior
techniques and integration Graphene on Pt(111) and Pd(111) Surfaces by
methods Surface Segregation
United Applications (gaz sensors, Graphene Oxide supported Layered Double
Garcia-Gallastegui Ainara Senior
Kingdom composites, nanoelectronic Hydroxides for CO2 capture applications
devices...)
Applications (gaz sensors, Hybrid graphene-quantum dot phototransistors
Gaudreau Louis Spain Senior
composites, nanoelectronic with ultrahigh gain
devices...)
Applications (gaz sensors, Hydrothermal synthesis of TiO2
Gholamvand Zahra Ireland composites, nanoelectronic nanotube/Graphene oxide composite and its Student
devices...) application in photocatalytic purification of water
POSTERS

Applications (gaz sensors, Simultaneous in-situ graphene oxide reduction

Giardi Rossella Italy Student
composites, nanoelectronic and UV curing of acrylic based formulations for
devices...) inkjet printing.
205
 Student
Presenting Author Country Topic Poster Title
Senior

Maria del United Growth, synthesis Self-assembly of a sulphur-terminated graphene

Gimenez Lopez Senior
Carmen Kingdom techniques and integration nanoribbon within a single-walled carbon
methods nanotube.
Applications (gaz sensors, New bioactive PMMA-Hydroxyapatite based bone
Goncalves Gil Portugal Student
composites, nanoelectronic cement reinforced with graphene oxide
devices...)
Goor Pedersen Jesper Denmark Magnetism and Spintronics Magneto-Optical Properties of Antidot Lattices Senior

Grodecki Kacper Poland Spectrocopies and Graphene formation on SiC (0001) surface steps Student
microscopies by CVD process
Nanoelectromechanical Influence of Structural Defects and Chemical
Güryel Songül Belgium Student
systems Functionalisation on the Mechanical Properties of
Graphene
Hague James United Quantum transport Gap engineering in atomically thin materials Senior
Kingdom

Hajgato Balazs Belgium Nanoelectromechanical Computation of Intrinsic Mechanical Properties of Senior

systems Double Layer Graphene

Direct transfer of graphene without the removal

Han Chang-Soo Korea Chemistry of Graphene Senior
of a metal substrate using a liquid polymer

Hancock Yvette United Magnetism and Spintronics Towards a realistic model of nanographene - Senior
Kingdom linking theory and experiment
Henrard Luc Belgium Spectrocopies and Electronic properties and STM images of N and B Senior
microscopies doped graphene
Hesse Lisa Germany Magnetism and Spintronics Orbital Magnetism in graphene bulk and Student
nanostructures
Heydrich Stefanie Germany Spectrocopies and Photoluminescence in Graphene Antidot lattices Student
microscopies
Hong Seul Ki Korea Chemistry of Graphene Chemical Analysis and Thermal Curing Effects of Student
CVD graphene during Transfer Pocess
Applications (gaz sensors, Decorated Carbon Nanostructured Electrodes for
Hussein Laith Germany Student
composites, nanoelectronic Biofuel Cell applications
devices...)
Growth, synthesis
Huynh Chi Australia Structured Graphene – Spinnable CNT and Beyond Student
techniques and integration
methods
Ijäs Mari Finland Chemistry of Graphene Chemical modification of graphene with Cl Student

Ilie Adelina United Spectrocopies and Surface Potential Variations in Graphene Induced Senior
Kingdom microscopies by Crystalline Ionic Substrates
Isic Goran Serbia Spectrocopies and Plasmonic resonances in the infrared spectra of Senior
microscopies nanostructured graphene

United Growth, synthesis

Jackman Richard Diamond as a platform for supporting graphene Senior
Kingdom techniques and integration
methods
POSTERS

Highly Concentrated and Conductive Reduced

Jeong Seung Yol Korea Chemistry of Graphene Graphene Oxide Nanosheets by Monovalent Senior
Cation-pi interaction: Toward Printed Electronics
206
 Student
Presenting Author Country Topic Poster Title
Senior

Applications (gaz sensors, Prospects of Graphene-enabled Wireless

Jornet Josep Miquel Spain Student
composites, nanoelectronic Communications
devices...)

Joucken Frederic Belgium Spectrocopies and Localized state and charge transfer in nitrogen- Student
microscopies doped epitaxial graphene

Kaestner Bernd Germany Quantum transport Nanoscale dual-gating of bilayer graphene on Senior
GaAs substrates
Kendra Fong Influence of Graphite Defect Density on Oxidation
Kam Singapore Chemistry of Graphene Student
Yu Behavior and Pi-electron Topology of Sub-
stoichiometric Graphene Oxides

Kang Hong Seok Korea Quantum transport Quantum Transport through Heterobilayers of Senior
Graphene Nanoribbon and Porphyrin Tape

Applications (gaz sensors, Synthesis, Characterization and Gas Sensing

Kayhan Emine Germany composites, nanoelectronic Behaviour of Large Area Continuous and Student
devices...) Transparent Graphene Films by Chemical Vapor
Deposition
United Growth, synthesis Nucleation and growth mechanism of graphene
Kim HoKwon Student
Kingdom techniques and integration on copper
methods
Applications (gaz sensors, Micro four-point probe characterization of
Klarskov Mikkel Denmark Student
composites, nanoelectronic nanostructured graphene
devices...)
Kochmann Sven Germany Spectrocopies and The Fluorescence Properties of Graphene Oxide Student
microscopies

Koghee Selma Belgium Other 2 dimensional Merging and alignment of Dirac points in a Student
materials shaken honeycomb optical lattice

Growth, synthesis Epitaxial Graphene on Si face of SiC: A

Kumar Bijandra France Senior
techniques and integration Comparative Study of Different Growth Conditions
methods
A Stable “Flat? Form of Two-Dimensional Crystals:
United Spectrocopies and
Kusmartsev Feodor Could Graphene, Silicene, Germanene Be Minigap Senior
Kingdom microscopies
Semiconductors and Have Huge
Magnetoresistance??
Landers John United States Chemistry of Graphene Investigation of Alumina/Graphene Oxide role in Student
catalysis
Growth, synthesis Molecular dynamics simulation of carbon
Laszlo Istvan Hungary Senior
techniques and integration nanostructures
methods
Applications (gaz sensors, Graphene Oxide as a Mono Atomic Protection
Laursen Bo W. Denmark Senior
composites, nanoelectronic Layer for Molecular Electronics: A Quantative
devices...) Structural Study
Lazar Petr Czech Chemistry of Graphene Nature of Interaction of Graphene with Ag, Au, Pd Senior
Republic Metals
Leconte Nicolas Belgium Quantum transport Chemically Tunable Transport Phenomena of Student
POSTERS

Functionalized Graphene
Growth, synthesis Atomistic Processes of Grain Boundary Motion
Lee Gun-Do Korea Senior
techniques and integration and Annihilation in Graphene
methods
207
 Student
Presenting Author Country Topic Poster Title
Senior

Lee Jae-Ung Korea Spectrocopies and Estimation of Young’s Modulus by Raman Student
microscopies Spectroscopy on Biaxially Strained Graphene

Lenz Lucia Germany Magnetism and Spintronics Graphene with a spin-orbit super-lattice potential Student

Lenzer Thomas Germany Spectrocopies and Ultrafast transient absorption and Raman- Senior
microscopies imaging studies of stacked graphene
Applications (gaz sensors, Solution-Processed Ultrathin Chemically Derived
Li Tao Denmark Senior
composites, nanoelectronic Graphene Films as Soft Top Contacts for Solid-
devices...) State Molecular Electronic Junctions

Li Qiang Denmark Nanoelectromechanical Suspended Graphene Based Devices and Student

systems Nanomechanical Properties
Lindvall Niclas Sweden Nanoelectromechanical Towards transfer-free fabrication of graphene Student
systems NEMS
Lipinska Ludwika Poland Chemistry of Graphene Fabrication of graphene flakes via oxidation- Senior
reduction method
Growth, synthesis Modelling graphene growth by atomistic
Lissowski Andrzej Poland Senior
techniques and integration simulation of 2D polycrystal crystallization – video
methods
Liu Ming-Hao Germany Quantum transport Minimal Tight-Binding Model for Quantum Senior
Transport in Graphene Heterojunctions
Lofwander Tomas Sweden Quantum transport Graphene nanogap for gate-tunable quantum- Senior
coherent single-molecule electronics
Growth, synthesis Synthesis of nanocrystalline graphene on
Lopes J. Marcelo Germany Senior
techniques and integration Al2O3(0001) by molecular beam epitaxy
methods
Spectrocopies and Measurement of reduced graphene oxide
Lopez-Polin Guillermo Spain Student
microscopies conductivity using Electrostatic Force Microscopy

Martin-Martinez Francisco Belgium Chemistry of Graphene Edge functionalization of graphene nanoribbons Senior
for electronic applications
Mathieu Claire France Spectrocopies and Effect of Oxygen Adsorption on the Local Senior
microscopies Properties of Epitaxial Graphene on SiC
Matkovic Aleksandar Serbia Spectrocopies and Spectroscopic ellipsometry measurements of Student
microscopies doped graphene
Applications (gaz sensors, Application of multilayer graphene for
Mazur Jacek Poland Senior
composites, nanoelectronic modification of the properties of composite
devices...) materials
Applications (gaz sensors, Complementary hot carrier transistor with vertical
Mehr Wolfgang Germany Senior
composites, nanoelectronic graphene base electrode for THz applications
devices...)

Growth, synthesis Structure and interface of graphene films grown

Michon Adrien France Senior
techniques and integration on SiC using propane-hydrogen-argon CVD
methods

Applications (gaz sensors, Surface Modification of Graphene Thorough

POSTERS

Mohamadi Somayeh Germany Student

composites, nanoelectronic Controlled Radical and Conventional Free Radical
devices...) Polymerization
208
 Student
Presenting Author Country Topic Poster Title
Senior

Removal of oxidation debris from graphene oxide:

Moraes Ana Brazil Chemistry of Graphene Student
influence on the formation of composites based
on silver nanoparticles

Applications (gaz sensors,

Morales-Narváez Eden Spain Optical biosensors based on graphene Student
composites, nanoelectronic
devices...)
Munarriz Javier Spain Quantum transport Spin-dependent negative differential resistance in Student
graphene superlattices

Growth, synthesis Development and Study of manufacturing method

Muramatsu Kazuo Japan Senior
techniques and integration of few layers graphene dispersed solution for wet
methods coating

Facile synthesis of high quality metal free reduced

Nanjundan Ashok France Chemistry of Graphene Senior
graphene nanosheets from expandable graphite
oxide

Neek-Amal Mehdi Iran Nanoelectromechanical Effect of grain boundary on the buckling of Senior
systems graphene nanoribbons

Growth, synthesis Low Temperature Graphene Growth Using Large

Nesladek Milos Belgium Senior
techniques and integration Area Linear-Antenna Microwave Plasma
methods Enhanced CVD System

Neuen Christian Germany Chemistry of Graphene Effects of nanostructures on macroscopic physical Student
properties of graphene layers

Ni Zhenhua China Spectrocopies and Surface enhanced Raman scattering of graphene Senior
microscopies

United Energy loss rates of hot Dirac fermions in

Nicholas Robin Quantum transport Senior
Kingdom epitaxial, exfoliated and CVD graphene under high
magnetic fields

United Applications (gaz sensors, Tunneling Negative Differential Resistance in

Nogaret Alain Senior
Kingdom composites, nanoelectronic Flexible Silicone/Graphite Composites
devices...)
Oroszlany Laszlo Hungary Quantum transport Intraband electron focusing by a flat lens in Senior
bilayer graphene
Spectrocopies and Graphene nanoribbons as low-bandgap donor
Osella Silvio Belgium Student
microscopies materials for organic photovoltaic: Quantum-
chemical aided design
Paiva Maria Portugal Chemistry of Graphene Formation of Graphene Nanoribbons in Solution Senior

Applications (gaz sensors, Nitrogen-doped Graphene and its Iron-based

Parvez Md Khaled Germany Student
composites, nanoelectronic composite as Efficient Electrocatalysts for Oxygen
devices...) Reduction Reaction

Growth, synthesis Graphene growth on Cu mono- and

Pasternak Iwona Poland Senior
techniques and integration polycrystalline substrates
methods
Hydroxyl Functional Groups on Pristine, Defected
POSTERS

Peressi Maria Italy Chemistry of Graphene Senior

Graphene, and Graphene Epoxide: insights from
first principles calculations
209
 Student
Presenting Author Country Topic Poster Title
Senior

Petersen Soren Denmark Chemistry of Graphene High Conductance, Large Area, Single Layer Student
Graphenes from Graphene Oxide

Growth, synthesis Graphene Nanoribbon Heterojunctions via partial

Pignedoli Carlo Antonio Switzerland Senior
techniques and integration cyclodehydrogenation
methods

Poltierova Jana Czech Magnetism and Spintronics Magnetic and transport properties of Senior
Vejpravova Republic graphene@MNPs hybrides

Popov Andrei Russia Chemistry of Graphene Chiral graphene nanoribbon inside carbon Senior
nanotube: ab initio study

Prezzi Deborah Italy Spectrocopies and Structure, Stability and Electronic Properties of Senior
microscopies Graphene Edges on Co(0001)
Rioux Julien Germany Magnetism and Spintronics Optical spin current injection in graphene Senior

Romeo Valentina Italy Chemistry of Graphene Mechanical stabilization of graphene aerogels by Senior
vulcanization with pure sulphur
Rozhkova Natalia Russia Chemistry of Graphene Molecular graphene of shungite Senior

Rudenko Alexander Germany Chemistry of Graphene Adsorption of cobalt on graphene: a quantum Senior
chemical perspective

Growth, synthesis Graphene produced by electrochemical exfoliation

Ruiz Virginia Spain Senior
techniques and integration of graphite: electroanalytical properties
methods

Sachs Burkhard Germany Chemistry of Graphene Theory of graphene-boron nitride Student

heterostructures
United Applications (gaz sensors,
Samuels Alexander Organic and Metallo-organic Doping of Graphene Student
Kingdom composites, nanoelectronic
devices...)
Growth, synthesis Synthesis of conducting transparent few-layer
Sandana Eric Vinod France Senior
techniques and integration graphene directly on Glass at 450°C
methods

Growth, synthesis Ecofriendly Reduction of Graphene Oxide Using

Sandhu Adarsh Japan Senior
techniques and integration Extremophile Bacteria
methods
Santos Cristiane Belgium Spectrocopies and Reflectance of pristine and N-doped epitaxial Senior
microscopies graphene from THz to mid-IR
Saxena Manav India Chemistry of Graphene Graphene: In Our Food Stuffs since Mesolithic Age Student

Growth, synthesis Efficient graphene preparation by combined

Schellenberg Peter Portugal Senior
techniques and integration intercalation – exfoliation steps
methods
Schlierf Andrea Italy Chemistry of Graphene The interaction of pyrene derivatives with Student
graphene nanoplatelets
Quantum Hall effect in exfoliated graphene
POSTERS

Schopfer Félicien France Quantum transport Senior

affected by charged impurities: metrological
measurements
210
 Student
Presenting Author Country Topic Poster Title
Senior

Interacting electrons and spin-splitting in

Shylau Artsem Sweden Quantum transport Student
graphene and graphene nanoribbons in the
quantum Hall regime

Electronic Transport Between Platinum Contacts

Silva-Guillén Jose Angel Spain Quantum transport Student
Through Graphene/Nanotubes Structures

Sinitsyna Olga Russia Spectrocopies and New promising pyrolytic graphite for micro- Senior
microscopies mechanical exfoliation of graphene

Sivek Jozef Belgium Other 2 dimensional First-principles investigation of titanium and Student
materials titanium dioxide adsorption on graphene

Son Jangyup Korea Spectrocopies and In-situ Raman study on CVD-grown graphene Student
microscopies microbridge under high current density

United Applications (gaz sensors, Fabrication and Applications of Graphene in

Song Mo Senior
Kingdom composites, nanoelectronic Loughborough University
devices...)

Applications (gaz sensors, New Electric Conductive Polymeric

Spitalsky Zdeno Slovakia Senior
composites, nanoelectronic Nanocomposites Based on Graphene
devices...)

Growth, synthesis 3D CVDGraphene™ Material Production Scale-up

Strobl Karlheinz United States Senior
techniques and integration Process using Ni powders
methods
Sul Onejae Korea Spectrocopies and Controlling the Chirality of Graphene’s edges Senior
microscopies using Polarization Selective Laser Annealing
Szpak Nikodem Germany Quantum transport A sheet of graphene – quantum field in a discrete Senior
curved space
Spectrocopies and Reversible Formation and Hydrogenation of
Themlin Jean-Marc France Senior
microscopies Deuterium-Intercalated Quasi-Free-Standing
Graphene on 6H-SiC(0001)

Growth, synthesis Electron-beam-induced direct etching of

Thiele Cornelius Germany Student
techniques and integration Graphene
methods
Toke Csaba Hungary Magnetism and Spintronics Excitations of bilayer graphene in the quantum Senior
Hall regime
Growth, synthesis Experimental study of nucleation and growth
Trinsoutrot Pierre France Student
techniques and integration mechanisms of graphene synthesized by Low
methods Pressure Chemical Vapor Deposition on copper foil
Troppenz Gerald V. Germany Spectrocopies and Strain analysis of CVD graphene by in situ Raman Student
microscopies spectroscopy
Growth, synthesis Graphite Oxide Reduction to Graphene Applying
Trusovas Romualdas Lithuania Student
techniques and integration Ultrashort Laser Pulses
methods
Growth, synthesis A molecular route to 1 nm thick carbon
Turchanin Andrey Germany Senior
techniques and integration nanomembranes (CNMs) and graphene for
POSTERS

methods functional applications

Ullrich Daniela Germany Spectrocopies and Investigation of excitonic Fano resonances in Student
microscopies graphene using optical spectroscopy
211
 Student
Presenting Author Country Topic Poster Title
Senior

Effect of Topological Disorder and Spin-Orbit

Van TUan Dinh Spain Quantum transport Student
Coupling in the Transport Properties of Graphene

Vijay Gopal Chilkuri France Chemistry of Graphene On the Interaction of Beryllium atoms with Student
Graphene Nanostructures
United Applications (gaz sensors, Plasma production and functionalisation of
Walters Ian Senior
Kingdom composites, nanoelectronic Graphene and GNP’s by plasma exfoliation
devices...)
Wang Kangpeng China Other 2 dimensional Ultrafast Nonlinear Optical Responses of 2D MoS2 Student
materials Nanosheets
A Robust, Scalable Process for Automated
Wendelbo Rune Norway Chemistry of Graphene Production of Highly Dispersed Graphene Oxide Senior
and its use in transparent conductive coatings

United Development of Nano-Composites which include

Williams John Chemistry of Graphene Student
Kingdom Plasma Functionalized Graphene Nanoplatelets

United The real graphene oxide revealed: stripping the

Wilson Neil Chemistry of Graphene Senior
Kingdom oxidative debris from the graphene-like sheets

Characterisation of multilayer grapheene

Spectrocopies and
Witowski Andrzej Poland obtained by SiC sublimation on C surface by far Senior
microscopies
infrared magnetospectroscopy and Raman
spectroscopy

Wlasny Igor Poland Spectrocopies and Scanning Tunneling Spectroscopy (STS) studies of Student
microscopies Graphene-Au interactions

Growth, synthesis Novel method of graphite exfoliation towards

Wojtoniszak Malgorzata Poland Student
techniques and integration synthesis of graphene
methods
Applications (gaz sensors, Nitrogen Doped Graphene-Supported Fe3O4
Wu Zhong-Shuai Germany Senior
composites, nanoelectronic Nanoparticles for Efficient Oxygen Reduction
devices...) Reaction
Nanoscale Comparison of graphite exfoliation by
Xia Zhenyuan Italy Chemistry of Graphene Senior
supramolecular, chemical and electrochemical
methods

Yaish Yuval Israel Quantum transport Chemical Potential of Inhomogeneous Single Senior
Layer of Graphene
Reaction Mechanisms of Chemical Reduction of
Yan Su China Chemistry of Graphene Senior
Graphene Oxide by Sulfur-Containing Compounds
：A DFT Study
Applications (gaz sensors, High Power Light Emitting Diode Operation with
Youn Doo-Hyeb Korea Senior
composites, nanoelectronic Graphene Transparent Electrode
devices...)
POSTERS

Yu Lili United States Other 2 dimensional Current Saturation in Few-layer MoS2 FET Student
materials
212
 Student
Presenting Author Country Topic Poster Title
Senior

United Spectrocopies and Interaction of Metals with suspended Graphene

Zan Recep Student
Kingdom microscopies observed by Transmission Electron Microscopy

Zanolli Zeila Belgium Quantum transport Quantum spin transport in carbon chains with Senior
graphene-like contacts.
Applications (gaz sensors, Energy levels of quantum rings in bilayer
Zarenia Mohammad Belgium Student
composites, nanoelectronic graphene
devices...)
Two-dimensional charge relaxation in graphene:
Zebrev Gennady Russia Quantum transport Senior
generalized telegraph equations and pseudo-
relativistic invariance

A novel way to prepare soluble graphene through

Zhang Xiaoyan Netherlands Chemistry of Graphene Student
organic functionalization on graphene

Zhu Shou-En Netherlands Nanoelectromechanical Graphene nanomechanical piezoresistive sensor Student

systems
Ziatdinov Maxim Japan Spectrocopies and Visualization of electronic states along the Student
microscopies boundaries of graphite nanoholes

POSTERS
213
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