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Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.62 V at IF = 5 A
FEATURES
TO-220AB
TMBS ® ITO-220AB • Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
3 3 peak of 245 °C (for TO-263AB package)
2 2
1 • Solder bath temperature 275 °C maximum, 10 s, per
V20200G 1 VF20200G
JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA
PIN 1 PIN 2 PIN 1 PIN 2
package)
PIN 3 CASE PIN 3
• Material categorization: for definitions of compliance
D2PAK (TO-263AB) TO-262AA please see www.vishay.com/doc?99912
K
K TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
2 converters and reverse battery protection.
1 3
2
VB20200G VI20200G 1 MECHANICAL DATA
PIN 1 K PIN 1 PIN 2 Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB), and
PIN 2 HEATSINK PIN 3 K TO-262AA
Molding compound meets UL 94 V-0 flammability rating
DESIGN SUPPORT TOOLS click logo to get started Base P/N-E3 - RoHS compliant, commercial grade
Terminals: matte tin plated leads, solderable per
Models J-STD-002 and JESD 22-B102
Available
E3 suffix meets JESD 201 class 1A whisker test
PRIMARY CHARACTERISTICS Polarity: as marked
IF(AV) 2 x 10 A Mounting Torque: 10 in-lbs max.
VRRM 200 V
IFSM 110 A
VF at IF = 10 A 0.71 V
TJ max. 150 °C
TO-220AB, ITO-220AB,
Package
D2PAK (TO-263AB), TO-262AA
Circuit configuration Common cathode
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
25 9
Average Forward Rectified Current (A)
D = 0.5 D = 0.8
Resistive or Inductive Load 8 D = 0.3
D = 0.2
Average Power Loss (W)
20 V(B,I)20200G 7
6 D = 0.1 D = 1.0
15
5
VF20200G
4
10
T
3
5 2
1 D = tp/T tp
0 0
0 25 50 75 100 125 150 175 0 2 4 6 8 10 12
Case Temperature (°C) Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
100 10
TA = 125 °C
10
1 TA = 100 °C
TA = 25 °C V(B,I)20200G
0.1 1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 100
Instantaneous Forward Voltage (V) t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode
100 10
Junction to Case
10
TA = 150 °C
1 TA = 125 °C
0.1 TA = 100 °C
0.01
0.001 TA = 25 °C
VF20200G
0.0001 1
10 20 30 40 50 60 70 80 90 100 0.01 0.1 1 10 100
Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 7 - Typical Transient Thermal Impedance Per Diode
10 000
TJ = 25 °C
f = 1.0 MHz
Junction Capacitance (pF)
Vsig = 50 mVp-p
1000
100
10
0.1 1 10 100
Reverse Voltage (V)
TO-220AB
0.415 (10.54)
0.380 (9.65) 0.161 (4.08) 0.185 (4.70)
0.139 (3.53) 0.175 (4.44)
0.113 (2.87) 0.055 (1.39)
0.103 (2.62) 0.045 (1.14)
0.035 (0.90)
0.104 (2.65) 0.028 (0.70)
0.022 (0.56)
0.096 (2.45) 0.205 (5.20) 0.014 (0.36)
0.195 (4.95)
TO-262AA
0.035 (0.90)
0.104 (2.65) 0.028 (0.70) 0.022 (0.56)
0.096 (2.45)
0.205 (5.20) 0.014 (0.35)
0.195 (4.95)
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Authorized Distributor
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