PNP Silicon Planar Epitaxial Transistors

FEATURES
Power dissipation
PCM: 0.625 W (Tamb=25℃) 1
Collector current 1. COLLECTOR
ICM: -0.1 A
2
Collector-base voltage 2. BASE

VCBO: BC556 -80 V 3

3. EMITTER
BC557 -50 V
BC558 -30 V 1 2 3

Operating and storage junction temperature range

TO-92
TJ, Tstg: -55℃ to +150℃

Electrical Characteristics (Ta=25 oC unless otherwise specified)

SPEC min max unit

Collector-base breakdown voltage BC556 -80
BC557 VCBO Ic= -100µA, IE=0 -50 V
BC558 -30
Collector-emitter breakdown voltage BC556 -65
BC557 VCEO IC= -2mA , IB=0 -45 V
BC558 -30

Emitter-base breakdown voltage VEBO IE= -100µA, IC=0 -6 V

Collector cut-off current BC556 VCB=- 70 V, IE=0

BC557 ICBO VCB= -45 V, IE=0 -0.1 µA
BC558 VCB= -25V, IE=0
Collector cut-off current BC556 VCE= -60 V, IB=0
BC557 ICEO VCE= -40 V, IB=0 -0.1 µA
BC558 VCE= -25 V, IB=0
Emitter cut-off current BC556
BC557 IEBO VEB= -5 V, IC=0 -0.1 µA
BC558
DC current gain BC556 120 500
BC557 120 800
BC558 120 800
hFE(1) VCE=-5V, IC= -2mA
BC557A 120 220
BC556B/BC557B/BC558B 180 460
BC557C 420 800
Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -5mA -0.3 V

Base-emitter saturation voltage VBE(sat) IC= -100mA, IB=-5mA -1 V

VCE= -5V, IC= -10mA

Transition frequency fT 150 MHz
f = 100MHz