Input Parameter

Parameter Value Unit

Pin 3240 W
Vin 400 V
Vout 48 V
N1 8 Turns
N2 2 Turns
Fsw 185 KHz
Lm 30 uH
δ 1.72E-08
MOSFET BRIDGE (W20NM60)
Rdson (60 C, Vdrv = 10V) 29 mR
Vmiller 8V
Vthreshold 4V
Ciss 1.5E-09 F
Qg 5.4E-08 C
Eoss 1E-05 J
Qgd 2E-08 C
Rg 10 Ohms
Quantity Fet // 1 Pcs
SECONDARY DIODE (MUR3020PT)
Rd 20 mR
Vf 0.8 V
Vmilner 5.5 V
Vthreshold 3V
Ciss 4.6E-09 F
Coss 9E-10 F
Qgd 1.8E-08 C
Rg 2 Ohms
Quantity Diode // 2 Pcs
RESONANT INDUCTANCE
Rdc 0.00338 Ohms
Ae 1.89 Cm2
n_res 8 Turns
m_res 0.09 Kg
 TRANSFORMER POWER
Rdc Primary 0.0046 Ohms
Rdc Secondary 0.00146 Ohms
Ae 3.28 Cm2
m_tran 0.195 Kg
Shunt
Rshunt 0.1 mR
Core Fe
k 4.855E-05
m 1.63
n 2.62

Conduction Loss
Parameter Value Unit
Pconmosbr 4.94914158355 W
PconLr 0.57683098457 W
Pconpritran 0.26906886914 W
Pconsectran 1.36640190938 W
Pshunt 0.455625 W
Pcondiode 7.59375 W
Pconchokeout 0W
PconCr 1.70660054605
TOTAL CONDUCTION LOSS 16.4617938927 W

TOTAL LOSS 127.773105386 W

Efficience 96.2060061237 %
 THREE-PHASE LLC C
arameter
Note

Primary Turns
Secondary Turns

Resitivity of Copper
GE (W20NM60)

ODE (MUR3020PT)
Each leg
Each leg
unused
unused
unused
unused
unused
unused

NDUCTANCE
Each leg

Mass of inductor
MER POWER
Each leg
Each leg

Mass of transformer
unt

e Fe

Material: PC95, Fsw > 100kHz, < 500kHz

Resul
ion Loss
Note
Mosfet bridge conduction loss
Resonant inductor conduction loss
Primary transformer conduction loss
Secondary transformer conduction loss
Shunt loss (unused)
Diode conduction loss
Choke ouput conduction loss
 THREE-PHASE LLC CONVERTER LOSS

Parameter Value

Iout 67.5
IsecLine 17.6625
IsecPhase 17.6625
VsecPhase 53.28
IsecLine_ave 11.25

IpriPhase 4.415625
IpriLine 2.54936228239044
VpriPhase 213.12
ImPhase 6.11464968152866
IrrmsPhase 7.54232622394733
IrrmsLine 4.35456407571196
IpriLine_ave 2.7
MO
Toff 3.5397207708E-08
MOSFET
Toff 1.3954631211E-08
T
calculating from Vf-If graph n 4
Bac 0.09887936717205
W/Kg 43.5367522645972

Bac 0.07054537062003
W/Kg 17.9749078437901

8 turns, l = 8*46.8 (PQ40/40)(mm), S = 1.9mm2 ESR 0.01

 8 turns, l = 8*64 (PQ50/50)(mm), S = 1.9mm2
2 turns, l = 2*64 (PQ50/50)(mm), S = 0.05*30 mm2

Results
Switching Loss
Parameter Value Unit
MOSFET BRIDGE (W20NM60)
Pswmosbr 21.2170863 W
Pcossmosbr 5.55 W
Pgmosbr 0.222 W
SECONDARY DIODE (MUR3020PT)
Pdiode 54 W
Pcossmosbr 3.452544 W
Pgmosbr 0.5994 W
TOTAL SWITCHING LOSS 80.9890863 W
 Output Parameter
Unit Note
Secondary Side (Each leg)
A Output Current
A RMS Secondary Line Current
A RMS Secondary Phase Current
V RMS Secondary Phase Voltage
A Average Secondary Line Current
Primary Side (Each leg)
A RMS Primary Phase Current
A RMS Primary Line Current
V RMS Primary Phase Voltage
A RMS Magneting Current Phase
A Resonant Current RMS Phase
A Resonant Current RMS Line
A Average Primary Line Current
MOSFET BRIDGE (W20NM60)

MOSFET SYNC (TPH2R608NH,L1Q;3 FET //)

unused
TRANSFORMER POWER
T/T Transformer Ratio
Tesla Eq. (2-16) Trans/Ind Design
Eq. (2-2) Trans/Ind Design

RESONANT INDUCTOR
Tesla Eq. (2-16) Trans/Ind Design
Eq. (2-2) Trans/Ind Design

Output Capacitor Loss

 Core Loss
Note Parameter
M60) RESONANT INDUCTOR
Mosfet bridge Switching loss Core Loss
Output capacitance loss TRANSFORMER POWER
Gate loss Core Loss
020PT)
Diode loss
Output capacitance loss (unused)
Gate loss (unused)
TOTAL CORE LOSS
 24.811
21.855
19.02
16.03
12.7
10.124
6.6

4.44 for sine wave

 Core Loss
Value Unit Note
ESONANT INDUCTOR
4.85322511782332 W
ANSFORMER POWER
25.4690000747894 W

30.3222251926127 W
\
 Input Parameter
Parameter Value Unit
Pin 1440 W
Vin 400 V
Vout 48 V
N1 8 Turns
N2 2 Turns
Fsw 185 KHz
Lm 30 uH
δ 1.72E-08
MOSFET BRIDGE (W20NM60)
Rdson (60 C, Vdrv = 10V) 29 mR
Vmiller 8V
Vthreshold 4V
Ciss 1.5E-09 F
Qg 5.4E-08 C
Eoss 1E-05 J
Qgd 2E-08 C
Rg 10 Ohms
Quantity Fet // 1 Pcs
SECONDARY DIODE (MUR3020PT)
Rd 20 mR
Vf 0.85 V
Vmilner 5.5 V
Vthreshold 3V
Ciss 4.6E-09 F
Coss 9E-10 F
Qgd 1.8E-08 C
Rg 2 Ohms
Quantity Diode // 2 Pcs
RESONANT INDUCTANCE
Rdc 0.00338 Ohms
Ae 1.89 Cm2
n_res 8 Turns
m_res 0.09 Kg
 TRANSFORMER POWER
Rdc Primary 0.0046 Ohms
Rdc Secondary 0.00146 Ohms
Ae 3.28 Cm2
m_tran 0.195 Kg
Shunt
Rshunt 0.1 mR
Core Fe
k 4.855E-05
m 1.63
n 2.62

Conduction Loss
Parameter Value Unit
Pconmosbr 2.67116707784 W
PconLr 0.31132912838 W
Pconpritran 0.07972410938 W
Pconsectran 0.404859825 W
Pshunt 0.09 W
Pcondiode 2.25 W
Pconchokeout 0W
PconCr 0.4605460479
TOTAL CONDUCTION LOSS 6.1776261885 W

TOTAL LOSS 64.3881452313 W

Efficience 95.7199778903 %
 TWO-PHASE LLC CO
arameter
Note

Primary Turns
Secondary Turns

Resitivity of Copper
GE (W20NM60)

ODE (MUR3020PT)
Each leg
Each leg
unused
unused
unused
unused
unused
unused

NDUCTANCE
Each leg

Mass of inductor
MER POWER
Each leg
Each leg

Mass of transformer
unt

e Fe

Material: PC95, Fsw > 100kHz, < 500kHz

Resul
ion Loss
Note
Mosfet bridge conduction loss
Resonant inductor conduction loss
Primary transformer conduction loss
Secondary transformer conduction loss
Shunt loss (unused)
Diode conduction loss
Choke ouput conduction loss
 TWO-PHASE LLC CONVERTER LOSS

Parameter Value

Iout 30
IsecLine 11.775
IsecPhase 11.775
VsecPhase 53.28
IsecLine_ave 7.5

IpriPhase 2.94375
IpriLine 2.94375
VpriPhase 213.12
ImPhase 6.11464968152866
IrrmsPhase 6.78635430775012
IrrmsLine 6.78635430775012
IpriLine_ave 1.8
MO
Toff 3.5397207708E-08
MOSFET
Toff 1.3954631211E-08
T
calculating from Vf-If graph n 4
Bac 0.09887936717205
W/Kg 43.5367522645972

Bac 0.06347456548339
W/Kg 13.6298307004845

8 turns, l = 8*46.8 (PQ40/40)(mm), S = 1.9mm2 Parameter Value

ESR 0.01
 8 turns, l = 8*64 (PQ50/50)(mm), S = 1.9mm2
2 turns, l = 2*64 (PQ50/50)(mm), S = 0.05*30 mm2

Results
Switching Loss
Parameter Value Unit
MOSFET BRIDGE (W20NM60)
Pswmosbr 9.4298161335 W
Pcossmosbr 3.7 W
Pgmosbr 0.148 W
SECONDARY DIODE (MUR3020PT)
Pdiode 25.5 W
Pcossmosbr 3.452544 W
Pgmosbr 0.5994 W
TOTAL SWITCHING LOSS 38.777816134 W
 Output Parameter
Unit Note
Secondary Side (Each leg)
A Output Current
A RMS Secondary Line Current
A RMS Secondary Phase Current
V RMS Secondary Phase Voltage
A Average Secondary Line Current
Primary Side (Each leg)
A RMS Primary Phase Current
A RMS Primary Line Current
V RMS Primary Phase Voltage
A RMS Magneting Current Phase
A Resonant Current RMS Phase
A Resonant Current RMS Line
A Average Primary Line Current
MOSFET BRIDGE (W20NM60)

MOSFET SYNC (TPH2R608NH,L1Q;3 FET //)

unused
TRANSFORMER POWER
T/T Transformer Ratio
Tesla Eq. (2-16) Trans/Ind Design
Eq. (2-2) Trans/Ind Design

RESONANT INDUCTOR
Tesla Eq. (2-16) Trans/Ind Design
Eq. (2-2) Trans/Ind Design

Output Capacitor Loss

 Core Loss
Note Parameter
M60) RESONANT INDUCTOR
Mosfet bridge Switching loss Core Loss
Output capacitance loss TRANSFORMER POWER
Gate loss Core Loss
020PT)
Diode loss
Output capacitance loss (unused)
Gate loss (unused)
TOTAL CORE LOSS
 10 18 6.8 0.4624
20 29 10.4 1.0816
30 40 13.53 1.83061
40 51 17 2.89
50 62 20.15 4.06023
60 73 23.3 5.4289
70 83 26.61 7.08092

4.44 for sine wave

 Core Loss
Value Unit Note
ESONANT INDUCTOR
2.45336952608721 W
ANSFORMER POWER
16.9793333831929 W

19.4327029092801 W
 Chart Title
90

80

70

60

50

40

30

20

10

0
0 10 20 30 40 50 60 70
20

10

0
0 10 20 30 40 50 60 70
70 80
70 80
\
 Input Parameter
Parameter Value Unit
Pout 1080 W
Vin 400 V
Vout 48 V
N1 8 Turns
N2 2 Turns
Fsw 185 KHz
Lm 30 uH
δ 1.72E-08
MOSFET BRIDGE (W20NM60)
Rdson (60 C, Vdrv = 10V) 29 mR
Vmiller 8V
Vthreshold 4V
Ciss 1.5E-09 F
Qg 5.4E-08 C
Eoss 1E-05 J
Qgd 2E-08 C
Rg 10 Ohms
Quantity Fet // 1 Pcs
SECONDARY DIODE (MUR3020PT)
Rd 20 mR
Vf 0.85 V
Vmilner 5.5 V
Vthreshold 3V
Ciss 4.6E-09 F
Coss 9E-10 F
Qgd 1.8E-08 C
Rg 2 Ohms
Quantity Diode // 2 Pcs
RESONANT INDUCTANCE
Rdc 0.00338 Ohms
Ae 1.89 Cm2
n_res 8 Turns
m_res 0.09 Kg
 TRANSFORMER POWER
Rdc Primary 0.0046 Ohms
Rdc Secondary 0.00146 Ohms
Ae 3.28 Cm2
m_tran 0.195 Kg
Shunt
Rshunt 0.1 mR
Core Fe
k 4.855E-05
m 1.63
n 2.62

Conduction Loss
Parameter Value Unit
Pconmosbr 1.64971386118 W
PconLr 0.19227699486 W
Pconpritran 0.08968962305 W
Pconsectran 0.45546730313 W
Pshunt 0.050625 W
Pcondiode 2.53125 W
Pconchokeout 0W
PconCr 0.56886684868
TOTAL CONDUCTION LOSS 5.4872646309 W

TOTAL LOSS 40.1798540785 W

Efficience 96.4130890292 %
 ONE-PHASE LLC CO
arameter
Note

Primary Turns
Secondary Turns

Resitivity of Copper
GE (W20NM60)

ODE (MUR3020PT)
Each leg
Each leg
unused
unused
unused
unused
unused
unused

NDUCTANCE
Each leg

Mass of inductor
MER POWER
Each leg
Each leg

Mass of transformer
unt

e Fe

Material: PC95, Fsw > 100kHz, < 500kHz

Resul
ion Loss
Note
Mosfet bridge conduction loss
Resonant inductor conduction loss
Primary transformer conduction loss
Secondary transformer conduction loss
Shunt loss (unused)
Diode conduction loss
Choke ouput conduction loss
 ONE-PHASE LLC CONVERTER LOSS

Parameter Value

Iout 22.5
IsecLine 17.6625
IsecPhase 17.6625
VsecPhase 53.28
IsecLine_ave 11.25

IpriPhase 4.415625
IpriLine 4.415625
VpriPhase 213.12
ImPhase 6.11464968152866
IrrmsPhase 7.54232622394733
IrrmsLine 7.54232622394733
IpriLine_ave 1.35
MO
Toff 3.5397207708E-08
MOSFET
Toff 1.3954631211E-08
T
calculating from Vf-If graph n 4
Bac 0.09887936717205
W/Kg 43.5367522645972

Bac 0.07054537062003
W/Kg 17.9749078437901

8 turns, l = 8*46.8 (PQ40/40)(mm), S = 1.9mm2 ESR 0.01

 8 turns, l = 8*64 (PQ50/50)(mm), S = 1.9mm2
2 turns, l = 2*64 (PQ50/50)(mm), S = 0.05*30 mm2

Results
Switching Loss
Parameter Value Unit
MOSFET BRIDGE (W20NM60)
Pswmosbr 3.5361810501 W
Pcossmosbr 1.85 W
Pgmosbr 0.074 W
SECONDARY DIODE (MUR3020PT)
Pdiode 19.125 W
Pcossmosbr 3.452544 W
Pgmosbr 0.5994 W
TOTAL SWITCHING LOSS 24.58518105 W
 Output Parameter
Unit Note
Secondary Side (Each leg)
A Output Current
A RMS Secondary Line Current
A RMS Secondary Phase Current
V RMS Secondary Phase Voltage
A Average Secondary Line Current
Primary Side (Each leg)
A RMS Primary Phase Current
A RMS Primary Line Current
V RMS Primary Phase Voltage
A RMS Magneting Current Phase
A Resonant Current RMS Phase
A Resonant Current RMS Line
A Average Primary Line Current
MOSFET BRIDGE (W20NM60)

MOSFET SYNC (TPH2R608NH,L1Q;3 FET //)

unused
TRANSFORMER POWER
T/T Transformer Ratio
Tesla Eq. (2-16) Trans/Ind Design
Eq. (2-2) Trans/Ind Design

RESONANT INDUCTOR
Tesla Eq. (2-16) Trans/Ind Design
Eq. (2-2) Trans/Ind Design

Output Capacitor Loss

 Core Loss
Note Parameter
M60) RESONANT INDUCTOR
Mosfet bridge Switching loss Core Loss
Output capacitance loss TRANSFORMER POWER
Gate loss Core Loss
020PT)
Diode loss
Output capacitance loss (unused)
Gate loss (unused)
TOTAL CORE LOSS
4.44 for sine wave
30 37 11.75 1.38063
20 25 8.58 0.736
10 15 5.24 0.274
 2.175

Core Loss
Value Unit Note
ESONANT INDUCTOR
1.61774170594111 W
ANSFORMER POWER
8.48966669159645 W

10.1074083975376 W
\
Output power(%) 3-phase operation 2-phase operation 1-phase operation
Calc (%) Sim(%) Calc (%) Sim(%) Calc (%) Sim(%)
100 94.26 94.48 0
90 94.27 94.2 0
80 94.26 94.45 0
70 94.22 94.46 94.14 93.76
60 94.12 94.8 94.15 94.3
50 93.95 94.7 94.11 94.44
40 93.64 94.3 93.94 94.67
30 93.06 94.1 93.67 94.9 94.38 93.94
20 91.83 93.6 92.9 94.94 94.23 94.94
10 88.14 84.23 90 93.81 93.17 95.64

Output Ripple Current (A)

90

80

70
Peak-to-peak Current (A)

60

50 3-phase
2-phase
40 1-phase

30

20

10

0
10 20 30 40 50 60 70 80 90 100

Normalized Output Power (%)

 3 2 1 2 1
10 88.38 91.26 94.5 10 18 25
20 92.76 94.25 96 20 29 37
30 94.29 95.24 96.41 30 40 50
40 95.05 95.72 40 51 60
50 95.5 95.98 50 62
60 95.78 96.13 60 73
70 95.98 70 83
80 96.11 80
90 96.2 90
100 96.27 100

98

96

94
3-phase
2-phase
1-phase
92 3-
2-
90
1-
88
100

86

84
10 20 30 40 50 60 70 80 90 100
 3
3.72
3.73
3.95
4.98
5.96
6.87
7.48
8
9.4
11

3-phase
2-phase
1-phase

90 100