EEE221: PHYSICAL ELECTRONICS HOME WORK

Assignment 3
1. A uniform bar of n-type silicon of 2 µm length has a voltage of
1V applied across it. If 𝑁𝐷 = 1016 𝑐𝑚−3 and 𝜇𝑒 = 1350𝑐𝑚2 /
𝑉. 𝑠 (a) find the electron drift velocity, (b) the time it takes an
electron to cross the 2 µm length (c) the drift-current in the case
that the silicon bar has a cross sectional area of 0.25 µm2
2. Find the current that flows in a silicon bar of 10-μm length having
a 5-μm × 4-μm cross-section and having free-electron and hole
densities of 104 cm−3 and 1016 cm−3 , respectively, when a 1 V is
applied end-to-end. Use 𝜇𝑒 =1200 𝑐𝑚2 /V·s and 𝜇𝑝 = 500 𝑐𝑚2 /V·s.
3. If, for a particular junction, the acceptor concentration is
1017 cm−3 and the donor concentration is 1016 cm−3 , (i) find the
junction built-in voltage. Assume 1 × 1010 cm−3 (ii) Also, find
the width of the depletion region (W) and its extent in each of the
p and n regions when the junction terminals are left open. (iii)
Calculate the magnitude of the charge stored on either side of the
junction. Assume that the junction area is 100 µm2 . (iv) If a 3-V
reverse-bias voltage is applied across the junction specified find
W and 𝑄𝑗 .
4. By how much does the junction built in potentials change, ∅𝑏
change if NA or ND is increased by a factor of 10?
5. Calculate 𝐼𝑆 and the current I for V = 750 mV for a pn junction
for which 𝑁𝐴 = 1017 𝑐𝑚−3 , 𝑁𝐷 = 1016 𝑐𝑚−3 , A = 100 μ𝑚2 , ni=
1 × 1010 cm−3 , Lp = 5 μm, Ln = 10 μm, Dp = 10𝑐𝑚2 /s, and Dn=
18 𝑐𝑚2 /s.