Bipolar Junction transistor

Holes and electrons Three terminal device

determine device characteristics
Control of two terminal currents

Amplification and switching through 3rd contact

How can we make a BJT from a pn
diode?
• Take pn diode
V
I • Remember reverse bias
characteristics
• Reverse saturation current: I0
p n

I0 V
 Test: Multiple choice
Why is the reverse bias current of a pn diode
small?
1. Because the bias across the depletion region is
small.
2. Because the current consist of minority carriers
injected across the depletion region.
3. Because all the carriers recombine.
 Test: Multiple choice
Why is the reverse bias current of a pn diode
small?
1. Because the bias across the depletion region is
small.
2. Because the current consist of minority carriers
injected across the depletion region.
3. Because all the carriers recombine.
How can we make a BJT from a pn
diode?
• Take pn diode
V
I • Remember reverse bias
characteristics
e- • Reverse saturation current: I0
p n
Caused by minority carriers
h+ swept across the junction
I • np and pn low

I0 small

I0 V
 V
I

e-
p n Test: Multiple choice
h+

I • If minority carrier concentration

np and/or pn
can be increased what will happen to
I0?

I0 V 1. Increase
2. Decrease
3. Remain the same
 • If minority carrier concentration
V np and pn
I
can be increased near the depletion
region edge, then I0 will increase.
e-
p n
h+

I • If np and pn higher

|I0| larger

I0 V
 V
I

e-
p n Test: True-False
h+

If we only increase pn
then |I0| will still increase.

I0 V
How can we increase the minority carrier
concentration near the depletion region
edge?
• Take pn diode
V
I
• Remember forward bias
characteristics
h+
p n
• How can we make a hole
injector from a pn diode?
e-

1. By increasing the applied bias, V.

2. By increasing the doping in the p region only
3. By applying a reverse bias.
Hole injector
• Take pn diode
V
I
• Remember forward bias
characteristics
h+
• When using a p+n junction
p+p n
e-
diode current If ≈ hole current
I
• Ip  pno (eeV/kT-1)
In  npo (eeV/kT-1)
Since NA >> ND
V
np << pn
If
→ Ip >> In
 Thus:

A forward biased p+n diode is a good hole injector

A reverse biased np diode is a good minority carrier collector

V
V I0
I

h+ e-
p+ n n p
h+
e-
If W large, then?
W

1. Recombination of excess holes will occur and excess will be 0 at end of layer
2. Recombination of excess holes will occur and excess will be large at end of layer
3. No recombination of excess holes will occur.
4. Recombination of excess electrons will occur and excess will be np0 at end of layer
Thus:

A forward biased p+n diode is a good hole injector

A reverse biased np diode is a good minority carrier collector

V
V I0
I

dpn
h+ e-
p+ n n p
h+
e- Lp x
If W large → holes
W recombine

Excess hole concentration

reduces exponentially in W to
some small value.
What is the magnitude of the hole diffusion current at the edge
x=W of the “green” region?

V
V I0
I

dpn
h+ e-
p+ n n p
h+
e- Lp x

1. Magnitude of hole diffusion current at x=W is same as at x=0

2. Magnitude of hole diffusion current at x=W is almost 0
3. Magnitude of hole diffusion current cannot be derived from this layer.
Thus:

A forward biased p+n diode is a good hole injector

A reverse biased np diode is a good minority carrier collector

V
V I0
I

dpn
h+ e-
p+ n n p
h+
e- Lp x
if W large → holes
W recombine

Since gradient of dpn @ x=W

is zero, hole diffusion current
Reduce W is also zero
 BJT p+np
E: emitter V VVBC
B: base EB I I
E C
C: collector

p+ B
n p
E C

IC W < Lp

IE

VBC
Bipolar Junction Transistors (BJT)

NPN PNP
ECE 442 Power Electronics 16
 BJT Cross-Sections

Emitter

Collector

NPN PNP
ECE 442 Power Electronics 17
 Common-Emitter NPN Transistor
Reverse bias the CBJ

Forward bias the BEJ

ECE 442 Power Electronics 18

 Input Characteristics

• Plot IB as f(VBE, VCE)

• As VCE increases,
more VBE required to
turn the BE on so that
IB>0.
• Looks like a pn
junction volt-ampere
characteristic.

ECE 442 Power Electronics 19

 Output Characteristics

• Plot IC as f(VCE, IB)

• Cutoff region (off)
– both BE and BC
reverse biased
• Active region
– BE Forward biased
– BC Reverse biased
• Saturation region (on)
– both BE and BC
forward biased

ECE 442 Power Electronics 20

Transfer Characteristics

ECE 442 Power Electronics 21

Large-Signal Model of a BJT

KCL >> IE = IC + IB
βF = hFE = IC/IB
IC = βFIB + ICEO
IE = IB(1 + βF) + ICEO
IE = IB(1 + βF)
IE = IC(1 + 1/βF)
IE = IC(βF + 1)/βF

ECE 442 Power Electronics 22

I E = I B + IC
IC
 F = hFE =
IB
I C =  F I B + I CEO
I E = I B (1 +  F ) + I CEO  I B (  F + 1)
 1  F +1
I E  I C 1 +  = IC
 F  F
IC   F I E
F F
F =  F =
F +1 1−F
ECE 442 Power Electronics 23
 Transistor Operating Point

VB − VBE
IB =
RB
VCE VCC
IC = − +
RC RC
VCE = VCC − I C RC
ECE 442 Power Electronics 24
DC Load Line

VCC/RC

VCC

ECE 442 Power Electronics 25

BJT Transistor Switch

VB − VBE
IB =
RB
VCE = VCC − I C RC
VCE = VCB + VBE
VCB = VCE − VBE
ECE 442 Power Electronics 26
BJT Transistor Switch (continued)

VCC − VCE VCC − VBE

I CM = =
RC RC
I CM
I BM =
F
ECE 442 Power Electronics 27
BJT in Saturation
VCC − VCE ( sat )
I CS =
RC
I CS
I BS =
F
IB
ODF =
I BS
I CS
 forced =
IB
ECE 442 Power Electronics 28
Model with Current Gain

ECE 442 Power Electronics 29

 Miller Effect

iout
vbe vce

ECE 442 Power Electronics 30

 Miller Effect (continued)

d d
iout = Ccb (vbe − vce ) = Ccb (vbe − Avbe )
dt dt
d d
iout = Ccb ([1 − A]vbe ) = Ccb [1 − A] ( vbe )
dt dt
Ccb → Ccb [1 − A]

ECE 442 Power Electronics 31

 Miller Effect (continued)

• Miller Capacitance, CMiller = Ccb(1 – A)

– since A is usually negative (phase inversion),
the Miller capacitance can be much greater
than the capacitance Ccb
• This capacitance must charge up to the
base-emitter forward bias voltage, causing
a delay time before any collector current
flows.

ECE 442 Power Electronics 32

 Saturating a BJT

• Normally apply more base current than

needed to saturate the transistor
• This results in charges being stored in the
base region
• To calculate the extra charge (saturating
charge), determine the emitter current

I cs
Ie = I B − = ODF I BS − I BS = I BS ( ODF − 1)
 ECE 442 Power Electronics 33
 The Saturating Charge

• The saturating charge, Qs

Qs =  s I e =  s I BS (ODF − 1)
storage time constant of the
transistor

ECE 442 Power Electronics 34

Transistor Switching Times

ECE 442 Power Electronics 35

 Switching Times – turn on

• Input voltage rises from 0 to V1

• Base current rises to IB1
• Collector current begins to rise after the
delay time, td
• Collector current rises to steady-state
value ICS
• This “rise time”, tr allows the Miller
capacitance to charge to V1
• turn on time, ton = td + tr
ECE 442 Power Electronics 36
 Switching Times – turn off

• Input voltage changes from V1 to –V2

• Base current changes to –IB2
• Base current remains at –IB2 until the
Miller capacitance discharges to zero,
storage time, ts
• Base current falls to zero as Miller
capacitance charges to –V2, fall time, tf
• turn off time, toff = ts + tf
ECE 442 Power Electronics 37
 Charge Storage in Saturated BJTs

Charge storage in the Base Charge Profile during turn-off

ECE 442 Power Electronics 38

Example 4.2

ECE 442 Power Electronics 39

Waveforms for the Transistor Switch
VCC = 250 V
VBE(sat) = 3 V
IB = 8 A
VCS(sat) = 2 V
ICS = 100 A
td = 0.5 µs
tr = 1 µs
ts = 5 µs
tf = 3 µs
fs = 10 kHz
duty cycle k = 50 %
ECE 442 Power Electronics 40
ICEO = 3 mA
ECE 442 Power Electronics 41
 Power Loss due to IC for ton = td + tr

• During the delay time, 0 ≤t ≤td

• Instantaneous Power Loss
Pc (t ) = vCE iC = VCC I CEO
Pc (t ) = (250V )(3mA) = 0.75W

• Average Power Loss

td td
1 VCC I CEO
Pd =  Pc (t )dt =  dt = VCC I CEO f std
T 0 T 0

Pd = (250V )(3mA)(10kHz )(0.5 s) = 3.75mW

ECE 442 Power Electronics 42
 During the rise time, 0 ≤t ≤tr

Pc (t ) = vCE ic
 t  I CS
Pc (t ) = VCC + (Vce ( sat ) − VCC )  t
 tr  tr
dPc (t ) Vce ( sat ) − VCC I CS  t  I CS
= t + VCC + (Vce ( sat ) − VCC ) 
dt tr tr  tr  tr
Pc (t ) = Pmax @ t = tm
trVCC
tm =
2[VCC − Vce ( sat ) ]
ECE 442 Power Electronics 43
 (1 s )(250V )
tm = = 0.504  s
2[250V − 2V ]
2
V I
Pmax = CC CS

4[VCC − VCE ( sat ) ]

2
(250V ) (100 A)
Pmax = = 6300W
4[250V − 2V ]
ECE 442 Power Electronics 44
 Average Power during rise time

 VCC VCE ( sat ) − VCC 

tr
1
Pr =  Pc (t )dt = f s I CS tr  + 
T 0  2 3 
 (250V ) (2V − 250V ) 
Pr = (10kHz )(100 A)(1 s )  + 
 2 3 
Pr = 42.33W

ECE 442 Power Electronics 45

 Total Power Loss during turn-on

Pon = Pd + Pr
Pon = 0.00375 + 42.33 = 42.33375W
Pon = 42.33W

ECE 442 Power Electronics 46

ECE 442 Power Electronics 47
 Power Loss during
the Conduction Period
0  t  tn
ic (t ) = I CS = 100 A
vCE (t ) = VCE ( sat ) = 2V
Pc (t ) = ic vCE = (100 A)(2V ) = 200W
tn tn
1
Pn =  Pc (t )dt = VCE ( sat ) I CS f s  dt = VCE ( sat ) I CS f s tn
T 0 0

Pn = (2V )(100 A)(10kHz )(48.5 s ) = 97W

ECE 442 Power Electronics 48
ECE 442 Power Electronics 49
 Power Loss during turn off
Storage time
0  t  ts
ic (t ) = I CS = 100 A
vCE (t ) = VCE ( sat ) = 2V
Pc (t ) = vCE ic = VCE ( sat ) I CS = (2V )(100 A)
Pc (t ) = 200W
ts ts
1
Ps =  Pc (t )dt = VCE ( sat ) I CS f s  dt = VCE ( sat ) I CS f s t s
T 0 0

Ps = (2V )(100 A)(10kHz )(5 s ) = 10W

ECE 442 Power Electronics 50
ECE 442 Power Electronics 51
Power Loss during Fall time
0  t  tf
 t 
ic (t ) = I CS 1 −  , I CEO → 0
 tf 
 
V
vCE (t ) = CC t , I CEO → 0
tf
 t  t 
Pc (t ) = vCE ic = VCC I CS 1 −  
 t f  tf 

dPc (t ) VCC I CS  1   t 
=  −  t + 1 −   = 0
dt tf  t f   t f  
t f 3 s
Pc (t ) = Pm @ t = = = 1.5 s
2 2
V I (250V )(100 A)
Pm = CC CS = = 6250W
4 4
ECE 442 Power Electronics 52
 Power Loss during Fall time (continued)
tf
1 VCC I CS t f f s
Pf =  Pc (t )dt =
T 0 6
(250V )(100 A)(3 s )(10kHz )
Pf = = 125W
6
 VCC t f 
Poff = Ps + Pf = I CS f s  tsVCE ( sat ) + 
 6 
Poff = 10 + 125 = 135W
ECE 442 Power Electronics 53
ECE 442 Power Electronics 54
 Power Loss during the off time
0  t  to
vCE (t ) = VCC
ic (t ) = I CEO
Pc (t ) = vCE iC = VCC I CEO = (250V )(3mA) = 0.75W
to
1
Po =  VCC I CEO dt = VCC I CEO f s to
T 0
Po = (250V )(3mA)(10kHz )((50 − 5 − 3)  s)
Po = 0.315W
ECE 442 Power Electronics 55
 The total average power losses

PT = Pon + Pn + Poff + Po
PT = 42.33 + 97 + 135 + 0.315
PT = 274.65W

ECE 442 Power Electronics 56

Instantaneous Power for Example 4.2

ECE 442 Power Electronics 57

BJT Switch with an Inductive Load

ECE 442 Power Electronics 58

Load Lines

ECE 442 Power Electronics 59