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Infineon Technologies IRF540ZPBF C459970
Infineon Technologies IRF540ZPBF C459970
nH 6mm (0.25in.)
G
LS Internal Source Inductance ––– 7.5 ––– from package
S
and center of die contact
Ciss Input Capacitance ––– 1770 ––– VGS = 0V
Coss Output Capacitance ––– 180 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 100 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 730 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 110 ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 170 ––– VGS = 0V, VDS = 0V to 80V f
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 36 MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current ––– ––– 140 integral reverse
(Body Diode) c p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 22A, VGS = 0V e
trr Reverse Recovery Time ––– 33 50 ns TJ = 25°C, IF = 22A, VDD = 50V
Qrr Reverse Recovery Charge ––– 41 62 nC di/dt = 100A/µs e
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRF540Z/S/L
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
ID, Drain-to-Source Current (A)
4.5V
10 10
4.5V
60µs PULSE WIDTH 60µs PULSE WIDTH
Tj = 25°C Tj = 175°C
1 1
0.1 1 10 100 0.1
0 1 10 100
100
VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)
1000 80
T J = 175°C
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current (Α)
60
100
T J = 175°C
40
T J = 25°C
10
T J = 25°C
20
VDS = 25V
VDS = 10V
60µs PULSE WIDTH
380µs PULSE WIDTH
1
4.0 5.0 6.0 7.0
0
0 10 20 30 40 50
VGS, Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
3000 20
VGS = 0V, f = 1 MHZ ID= 22A
C iss = C gs + C gd, C ds SHORTED
VDS= 80V
2000
Ciss
12
1500
8
1000
4
500 Coss FOR TEST CIRCUIT
Crss SEE FIGURE 13
0
0
1 10 100 0 10 20 30 40 50 60
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
1000.0 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
100.0 100
T J = 175°C
10.0 10 100µsec
1.0 1
T J = 25°C 1msec
Tc = 25°C
VGS = 0V Tj = 175°C 10msec
Single Pulse
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000
VSD, Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V)
40 3.0
(Normalized)
2.0
20
1.5
10
1.0
0 0.5
25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
10
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1
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IRF540Z/S/L
180
15V
60
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS 40
tp
20
0
25 50 75 100 125 150 175
I AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
QG
10 V
QGS QGD 4.0
VGS(th) Gate threshold Voltage (V)
VG
3.5
ID = 250µA
Charge 3.0
2.0
L
VCC
DUT
0 1.5
1K -75 -50 -25 0 25 50 75 100 125 150 175
T J , Temperature ( °C )
Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature
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IRF540Z/S/L
1000
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs
Avalanche Current (A)
0.1
1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
80
temperature far in excess of Tjmax. This is validated for
70 every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
60 not exceeded.
3. Equation below based on circuit and waveforms shown in
50
Figures 12a, 12b.
40 4. PD (ave) = Average power dissipation per single
avalanche pulse.
30 5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
20 6. Iav = Allowable avalanche current.
10 7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
0 tav = Average time in avalanche.
25 50 75 100 125 150 175 D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T J , Junction Temperature (°C)
*
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
-
+
Recovery
Current
Body Diode Forward
Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Ripple ≤ 5% ISD
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+
-VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
VDS
90%
10%
VGS
td(on) tr t d(off) tf
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IRF540Z/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415) 3.78 (.149) -B-
2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)
2.62 (.103) 4.20 (.165)
-A- 1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045) LEAD ASSIGNMENTS
MIN 1 - GATE
1 2 3 2 - DRAIN
3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530) 4.06 (.160)
3.55 (.140)
For GB Production
EXAMPLE: THIS IS AN IRF1010
LOT CODE 1789
AS S EMBLED ON WW 19, 1997 INTERNATIONAL PART NUMBER
IN T HE AS S EMBLY LINE "C" RECT IFIER
LOGO
DAT E CODE
LOT CODE
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IRF540Z/S/L
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
DAT E CODE
LOT CODE
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IRF540Z/S/L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IGBT
1- GATE
2- COLLEC-
TOR
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IRF540Z/S/L
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Notes:
Repetitive rating; pulse width limited by
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
max. junction temperature. (See fig. 11). avalanche performance.
Limited by TJmax, starting TJ = 25°C, L = 0.46mH This value determined from sample failure population. 100%
RG = 25Ω, IAS = 20A, VGS =10V. Part not tested to this value in production.
recommended for use above this value. This is only applied to TO-220AB pakcage.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%. This is applied to D2Pak, when mounted on 1" square PCB (FR-
Coss eff. is a fixed capacitance that gives the 4 or G-10 Material). For recommended footprint and soldering
same charging time as Coss while VDS is rising
techniques refer to application note #AN-994.
from 0 to 80% VDSS .
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/03
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/