KA3S0765R SAMSUNG POWER SWITCH SAMSUNG POWER SwITcH ‘The SPS product family is specially designed for an off line SMPS with ‘minimal external component. The SPS consist of high voltage Power SenseFET and current mode control IC. Included control IC features a tr- -immed oscillator, under voltage lock out, leading edge blanking, optimized gate driver, and temperature compensated current sources. ‘Also included are various protective functions, thermal shutdown, Over- voltage protection, Overcurrent protection, and overload protection. Compared with RCC or control IC and MOSFET solution, SPS can reduce total number of components, design size, weight, For this reason SPS can increase efficiency, productivity and system reliability. It has a basic platform well suited for cost effective C-TV power supply. FEATURES = Wide operating frequency range up to 1SOKH7, - Pulse by pulse over current timiting = Over load protection - Over voltage protection (min:23V) - Internal thermal shutclown function Under voltage lockout Inernal high voltage sense FET - External syne terminal ~ Auto Restart Mode BLOCK DIAGRAM L.DRAIN 2GND 3.Voe 4.8.5. Synq ORDERING INFORMATION INTERNAL r BIAS. O DRAIN TLoaie Goon q "tT ; Lo rma Ll ToT ON RET S.GND ‘LETRONICSKA3S0765R SAMSUNG POWER SWITCH ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Value Unit Drain - Souree(GND) Voltage (1) Vpss 650 v Drain - Gate Voltage (Ras =1M¥ ) Vpor 650 v Gate - Source(GND) Voltage Vas 430 v Drain Current Pulsed (2) Ib 28.0 Anc Single Pulsed Avalanche Energy (3) Eas 570 mJ Avalanche Current Jas - A Continuous Drain Current (Te = 25; ) Ib. 70 Apc Continuous Drain Current (Tc = 100; _)| Ib. 5.6 Ape Supply Voltage Voc 30 v Analog Input Voltage Range VeR -0.3 ~ Vsp Vv Total Power Dissipation Pot wt HS) 10 » Derating 1 Wii Operating Temperature TopR 25 ~ 485 ; Storage Temperature TSIG =55~ +150 Notes: (1) T1=25; to 150 j (2) Repetitive ratin, (3) L=24mH, Vop ulse width limited by maximum junction temperature V, Ra = 25¥ , starting Tj =25; ELECTRICAL CHARACTERISTICS ( SFET part ) (Ta= 25; unless otherwise specified ) Symbol Characteristic Drain-Source Breakdown BV Voltage Inss Vos=Max, Rating, Voi Zero Gate Voltage Drain Current E Vos=0.8Max,Rating.V Ros(on) | Static Drain-Source On Resistance(4) Vas = 10V, Ip= 4.04 ‘LETRONICSKA3S0765R SAMSUNG POWER SWITCH ELECTRICAL CHARACTERISTICS ( SFET part continued) (Ta=25; unless otherwise specified ) Symbol Characteristic in| ‘Typ| Max|Units ‘Test Conditions gts Forward Transconductance(4) : Vps=15V, ID=4.0A Cas a 1600) Vos = OV, Vos = 25V, Toss ‘apaci 3 c Output Capacitance 0 Me Crss 120 Reverse Transfer Capacitance] td(on) | Turn On Delay Time 25 Vpp= 0.5BVpss , Ip (MOSFET switching time are essenstialy independent of operating temperature ) a Rise Time oe o5) Tur Off Delay Time Fall Time Total Gate Charge Vas = 10V, Ip=7.0A (Gate-Source + Gate-Drain ) Vps = 0.5BVpss (MOSFET switching time are essenstialy independent of operating temperature ) Gate-Source Charge Gate-Drain(Miller) Charge Notes: (1) T)=25; to 150 ; (2) Repetitive rating : Pulse width limited by maximum junction temperature (3) L = 24mH, Von =50V, Ra = 25¥ , starting Tj = 25; (4) Pulse Test : Pulse width ; 300uS, Duty Cycle ; 2 % ‘LETRONICSKA3S0765R ELECTRICAL CHARACTERISTICS ( Control part ) SAMSUNG POWER SWITCH (Ta=25; unless otherwise specified ) Symbol Characteristics Min] Typ | Max] Unit | ‘Test Conditions REFERENCE SECTION Vref __ | Output Voltage (Note 1)] 4.80] 5.00| 5.20] v_| Ta=25; Vref/ » T} Temperature Stability (Note 1&2) 0.3 | 0.6 |mw/; | -25; Taj +85; OSCILLATOR SECTION Fosc_| Initial Accuracy 18 | 20 | 22 | KHz | Ta=25; <7 yt | Frequency Change with 7 oo | ¥F/¥T Temperature (Note 2) i 5]; 10 ie 25; Ta ; +85 Vsyrn | Sync Threshold Voltage 60|64]68 | V | Vib=5Vv Dmax | Maximum Duty Cycle 92} 95 | 98 | % FEEDBACK SECTION, Ire Feedback Source Current 07 | 0.9 1d mA SI 0 Ta=25; tela s vl clay Ci 2 a Tdelay Shutdown Delay Current 14] 18 | 2. uA 5V; Vib; Vsp OVER CURRENT PROTECTION SECTION tauaxy | Over Current Protection 44 [5.00] 5.6 | A_| Max. Inductor Current UVLO SECTION Vawin_| Start Threshold Voltage 14 | 15 | 16 | Vv Vents [ Minimum Operating Voltage 9 Lio | |v after turn on ELECTRONICSKA3S0765R SAMSUNG POWER SWITCH ELECTRICAL CHARACTERISTICS ( Continued) (Ta=25; unless otherwise specified ) Symbol Characteristics Min Test Conditions TOTAL STANDBY CURRENT SECTION Ist Start up Current Od Operating Supply Current 6 (control part only ) Torr vz_| Vee Zener Voltage 30 SHUTDOWN SECTION Vsp_| Shutdown Feedback Voltage 69 Tsp_ | ThermalShutdownTemperature(Tj -_ | i [ote 1) Vovp_| Over Voltage Protection SOFT START SECTION Iss__ | Soft Start Current 7 Sync&S/$ = GND Vss__ | Soft Start Voltage 47 | 5.0 | 53] V_ |VrB=2V Notes: (1) These parameters, although guaranteed,are not 100% tested in production (2) These parameters, although guaranteed, are tested in EDS(wafer test) process. (3) The amplitude of the sync. pulse is recommended to be between 2V and 3V for stable syne. function, ‘LETRONICSKA3S0765R. SAMSUNG POWER SWITCH TYPICAL PERORMANCE CHARACTERISTICS, ( These characteristic grahps are normalized at Ta = 25; ) P10 pemthg Fequency 25 0 25 50 75 100 125 150, 25 0 Ten pemtum |;KA3S0765R SAMSUNG POWER SWITCH TYPICAL PERFORMANCE CHARACTERISTICS (Continued) ( These characteristic grahps are normalized at Ta = 25; )KA3S0765R SAMSUNG POWER SWITCH TYPICAL PERFORMANCE CHARACTERISTICS (Continued) ( These characteristic grahps are normalized at Ta = 25; )