Sensors and Actuators A 331 (2021) 112876

Contents lists available at ScienceDirect

Sensors and Actuators A: Physical

journal homepage: www.elsevier.com/locate/sna

Semi-transparent reduced graphene oxide temperature sensor on

organic light-emitting diodes for fingerprint liveness detection of
smartphone authentication
Hanyung Jung a , Hyunkoo Lee b,∗
a
Department of Electrical and Electronics Engineering, Seoyeong University, Gyeonggi-do, Republic of Korea
b
Department of Electronics Engineering, Sookmyung Women’s University, Seoul, Republic of Korea

a r t i c l e i n f o a b s t r a c t

Article history: We report a semi-transparent temperature sensor for fingerprint liveness detection on an organic light-
Received 4 March 2021 emitting diode (OLED). Solution-processable graphene oxide was coated between two indium tin oxide
Received in revised form 19 May 2021 electrodes on a glass substrate, and a semi-transparent reduced graphene oxide (rGO) temperature sen-
Accepted 29 May 2021
sor was successively fabricated through graphene oxide (GO) reduction using a laser source. The rGO
Available online 2 June 2021
temperature sensor showed a resistance variance characteristic of 80 % compared to the initial resis-
tance when heated from 15 ◦ C to 170 ◦ C. When finger was touched on the rGO temperature sensor, the
Keywords:
resistance variation was 0.5 % and 7 % at 35 ◦ C and 50 ◦ C, respectively. In addition, GO was coated on
Graphene oxide
Reduced graphene oxide
the light-emitting side of green phosphorescent OLEDs to investigate the damage caused by photother-
Organic light-emitting diode mal reduction energy. The OLEDs irradiated by the laser source for GO reduction showed nearly the same
Laser irradiation current–voltage characteristics and electroluminescence spectrum as the device without laser irradiation,
Temperature sensor although the luminance of the device decreased due to the absorption of rGO.
Fingerprint sensor © 2021 Elsevier B.V. All rights reserved.

1. Introduction fluoride–trifluoroethylene (P(VDF-TrFE)) copolymer [4]. There-

Biometric authentication is becoming increasingly popular in
mobile devices [1]. In recent smartphones, fingerprint recognition
has gradually expanded to mobile display screens with advances
in display technology [2]. The Samsung Galaxy S10 smartphone,
launched in 2019, uses an ultrasonic method for organic light-
emitting diode (OLED) display, and the Samsung Galaxy A50,
launched in 2020, uses an optical method of on-screen fingerprint
recognition. The fingerprint recognition method on the smartphone
screens has gradually expanded to large screens, and the temper-
ature measurement of a living body can function as an important
factor to prevent the spoofing and forgery of fingerprints during
biometric authentication. Therefore, a temperature sensor needs to
be fabricated on a display screen to check the liveness of fingerprint
authentication.
Commercial temperature sensors have a wide operating range
and high responsiveness [3]. However, it is difficult to apply
them on display screens because they are commonly made of
opaque materials such as platinum, copper, and poly(vinylidene
∗ Corresponding author.
E-mail address: lhk108@sookmyung.ac.kr (H. Lee).
fore, a transparent temperature sensor that can be applied
to a smartphone was manufactured using transparent and
temperature-sensitive materials such as graphene [5].
Graphene, reduced graphene oxide (rGO), and nanoporous car-
bon materials have received a lot of attention owing to their
transparency and high conductivity [6–21]. In particular, rGO thin
films reduced from graphene oxide (GO) are suitable for opti-
cal transparency and electrical conductivity [22–32]. In addition,
because rGO is sensitive to temperature changes, it can easily
measure the temperature variance when fingerprints are being
authenticated on a mobile display screen.
Here, we report semi-transparent temperature sensors fab-
ricated using rGO sheets and patterned indium tin oxide (ITO)
electrodes on a glass substrate. The temperature sensor was simu-
lated as a fingerprint sensor on the display screen of a smartphone,
and the temperature changes were detected through a finger touch.
During real-time fingerprint sensing, it can simultaneously mea-
sure finger temperature to check the finger liveness and enhance
the level of security for biometric authentication [33]. In addition,
we reduced GO on green phosphorescent OLEDs using a laser light
source. The GO layer was successively reduced to rGO without dam-
aging the OLEDs.

https://doi.org/10.1016/j.sna.2021.112876
0924-4247/© 2021 Elsevier B.V. All rights reserved.
H. Jung and H. Lee
Fig. 1. Temperature sensor fabrication process flow of laser light irradiation. (a) Glass substrate with ITO pattern with gap of 1 mm, (b) GO droplet via drop casting, (c) laser
light irradiation of GO, (d) the fabricated rGO sheet.
Table 1
Concentration calculation of GO material on glass.
GO material mass Calculation
GO solution concentration 0.5 mg/mL
GO solution drop on sensor 0.002 mL
Dried GO on sensor 0.001 mg
GO droplet radius 0.6 mm
GO concentration 88.5 ␮g/cm2
2. Materials and methods
2.1. rGO temperature sensors
To fabricate the rGO temperature sensor, a transparent rigid
glass was prepared to prevent deformation by external forces, as
shown in Fig. 1. ITO electrodes were patterned as external terminals
on a glass substrate, and a gap of 1 mm was formed between the two
electrodes. A total of 0.002 mL of GO solution (Graphene Supermar-
ket, 0.5 mg/mL concentration) was drop-cast over the gaps between
the electrodes. A total of 0.001 mg of GO solution droplets were
dried at 20 ◦ C for 20 h. The dried GO concentration was 88.5 ␮g/cm2 ,
as shown in Table 1. The GO sheet was reduced by laser irradiation
from the top. After GO reduction, the edge of the ITO electrodes was
coated with silver paste (CANS, ELCOAT; resistivity 10−4 ·cm) to
minimize the contact resistance between the electrodes. The exter-
nal circuit was connected to a multimeter (GDM-8351, GWINSTEK,
Taiwan) for resistance measurement. Both the rGO resistance and
temperature of the device were simultaneously measured using
a commercial multimeter and a temperature sensor, respectively.
The optical transmittance of the rGO on ITO-patterned glass was
measured using an ultraviolet–visible–near-infrared (UV–vis–NIR)
spectrophotometer (Lambda 750, PerkinElmer, U.S.A.).
2.2. Green phosphorescent OLEDs
ITO-patterned glass substrates were sequentially cleaned with
sulfuric acid, acetone, and methanol, followed by rinsing with
deionized water. After drying the substrates, all organic materi-
als and top cathode metals were deposited in succession using
the vacuum thermal evaporation method without breaking the
vacuum. The device consisted of ITO as the anode, 1,4,5,8,9,11-
2
Sensors and Actuators A 331 (2021) 112876
hexaazatriphenylene hexacarbonitrile (HAT-CN, 10 nm) as the
hole-injection layer, 1,1-Bis((di-4-tolylamino)phenyl)cyclohexane
(TAPC, 50 nm) as the hole-transport layer, 4,4 ,4 -tri(N-
carbazolyl)triphenylamine (TcTa, 10 nm) as the electron-blocking
layer, 2,6-bis(3-(carbazol-9-yl)phenyl)pyridine (26DCzPPy,
10 nm) doped with tris(2-phenylpyridine)iridium(III) (Ir(ppy)3 ,
7 %) as the green phosphorescent emitting layer, tris(3-(3-
pyridyl)mesityl)borane (3TPYMB, 25 nm) as the electron-transport
layer, lithium (Li)-doped 3TPYMB (30 nm) and lithium fluoride
(LiF, 1 nm) as the electron-injection layers, and aluminum (Al,
100 nm) as the cathode. Li was purchased from a commercial com-
pany (SAES Getters S.p.A., Italy) and evaporated at approximately
870 ◦ C. The 3TPYMB and Li were simultaneously co-evaporated,
and their deposition rates were approximately 0.6 Å/s and 0.03 Å/s,
respectively. During the deposition of the doping layers, the
deposition rates of both the host and dopant materials were
controlled using a quartz crystal oscillator. The fabricated OLEDs
were transferred to a nitrogen-filled glove box, where they were
encapsulated using a UV-curable epoxy and a glass cap with a
moisture absorbent. The emission area of the fabricated devices
was 2 mm × 2 mm.
The current density–voltage (J–V) characteristics were mea-
sured using a source-measure unit (Keithley-2450, Tektronics,
U.S.A.), and the luminance (L) and electroluminescence (EL) spec-
tra were examined using a spectroradiometer (CS-2000, Konica
Minolta, Japan). The J–V–L measurements of the OLEDs were con-
ducted at room temperature (∼293 K) in a dark box. The efficiencies
were calculated using luminance, current density, and EL spectra.
3. Results & discussion
After applying light source irradiation for GO reduction,
rGO was verified via Raman spectroscopy and X-ray photo-
electron spectroscopy (XPS) measurements. The ID /IG (=1.0365)
ratios of GO in the Raman spectrum increased to the ID /IG
(=1.1240) ratios of rGO, indicating a better graphitization of
rGO than that of GO, as shown in Fig. 2(a). The oxygen-
containing functional groups in GO were removed, resulting in
the re-establishment of sp2 hybridized C C bonds. The XPS mea-
surements showed that both C O (286.5 eV) and C O (287.8 eV)
bonding of GO decreased, as shown in Fig. 2(b). Therefore,
H. Jung and H. Lee Sensors and Actuators A 331 (2021) 112876

Fig. 2. GO and rGO obtained through light irradiation reduction: (a) Raman spectra of D peak (1350 cm−1 ) and G peak (1580 cm−1 ) (b) XPS spectra.

3
H. Jung and H. Lee
Fig. 3. (a) Optical transmittance of rGO/ITO/Glass (Inset: photograph of
rGO/ITO/Glass, red arrow: ITO, black arrow: rGO). (b) Resistance variance of rGO
temperature sensor at 40 ◦ C (For interpretation of the references to colour in this
figure legend, the reader is referred to the web version of this article).
Raman spectroscopy and XPS measurements indicated that the
oxygen-containing functional groups in GO were significantly
removed.
Fig. 5. Schematic cross-sectional structure of (a) commercial OLED mobile display panel with on-display fingerprint sensor. (b) rGO temperature sensor with buffer layer of
polyimide film.
4
Sensors and Actuators A 331 (2021) 112876
Fig. 4. Resistance and variance percentage of (a) first temperature sweep from 15 ◦ C
to 170 ◦ C and (b) 10th temperature sweep from 15 ◦ C to 170 ◦ C.
The rGO film was fabricated on ITO (150 nm)/glass (0.7 mm) to
measure the optical transmittance, as shown in Fig. 3(a). The optical
transmittance of rGO/ITO/glass was approximately 54 % at 550 nm,
which is sufficient for display applications. The resistance value
of the manufactured rGO temperature sensor was measured after
stabilization for 1 h at 29 % humidity. Resistance variance, R, was
calculated as R0 – R divided by R0 , where R0 and R are the initial
H. Jung and H. Lee Sensors and Actuators A 331 (2021) 112876

Fig. 6. Resistance variance of rGO temperature sensor during finger touch at (a) 15 ◦ C, (b) 25 ◦ C, (c) 32 ◦ C, (d) 35 ◦ C, (e) 40 ◦ C, and (f) 50 ◦ C. Touch on (first arrow) and off
(second arrow).

5
H. Jung and H. Lee Sensors and Actuators A 331 (2021) 112876

Fig. 7. (a) Device structure of OLEDs with rGO layer, (b) J–V–L characteristics, (c) luminous current efficiency as a function of luminance, (d) EL spectra (inset: photograph of
green-emitting OLEDs) of OLEDs with (w/) and without (w/o) rGO layers.

resistance and resistance at a specific temperature, respectively, as sensor had a large resistance change at a temperature similar to
follows: that of the body temperature in the range of 20 ◦ C–40 ◦ C.
Commercial touch-integrated OLED display panels are covered
R0 − R with glass on the top and are composed of several hundred microm-
R = × 100 (%) (1)
R0 eters, as shown in Fig. 5(a). Even the most recent foldable display
panels are made of ultra-thin glass of tens of micrometers. In the fin-
According to Eq. (1), the change in resistance variance was under
gerprint sensor of photodiode method on the smartphone display
1 % at 40 ◦ C for 3 h 30 min, as shown in Fig. 3(b). Because the
screen, the photo signal of the fingerprint was operated by passing
resistance fluctuation for checking the liveness of the finger touch
through the transparent touch sensor panel and the OLED display
occurred within a second, the fluctuation of less than 1 % for 3 h
panel. Therefore, the rGO temperature sensor can be used for fin-
was sufficient.
gerprint authentication when trying to identify fake fingerprints,
The manufactured rGO temperature sensor was heated from
such as silicon or fingerprint photos.
15 ◦ C to 170 ◦ C using a hot plate. The resistance of the rGO sen-
The rGO sensor measured real-time temperature using a poly-
sor was measured from 200 k to 50 k at 15 ◦ C to 170 ◦ C in
imide film of Kaptone® tape of 100 ␮m instead of a glass as a
the first temperature sweep, just after manufacture, as shown in
protective cover glass for the mobile phone, as shown in Fig. 5(b).
Fig. 4(a). The resistance of the rGO temperature sensor decreased
When the finger was touched on the polyimide film, a tempera-
as the temperature increased. This was due to the improved charge
ture change occurred within a second. This temperature change
transport properties with the increase in temperature in rGO, which
was continuously evaluated when the rGO temperature sensor
was mainly dominated by the hopping transport mechanism [34].
was touched under various temperature conditions, as shown
The change percentage in resistance was obtained using Eq. (1)
in Fig. 6(a)–(f). At 15 ◦ C and 25 ◦ C, when the temperature was
to calculate the resistance variance rate. The resistance of the rGO
lower than that of the finger skin, which was adjusted to approxi-
temperature sensor changed from 600 k to 120 k at the 10th
mately 33 ± 1 ◦ C [35], the resistances of the rGO temperature sensor
temperature sweep when the temperature increased from 15 ◦ C to
increased to 3.4 % and 2.7 % of the initial resistances, respectively,
170 ◦ C, as shown in Fig. 4(b), which was the same as the first tem-
according to Eq. (1), as shown in Fig. 6(a) and (b). The increase in
perature sweep range. In the 10th temperature sweep from 15 ◦ C to
temperature of the rGO temperature sensor showed a decrease in
170 ◦ C, the rate of temperature variance obtained using Eq. (1) was
resistance because a relatively higher finger temperature resulted
the same as that of the first temperature sweep, whereas the resis-
in an increase in rGO temperature. At 32 ◦ C and 35 ◦ C, when the tem-
tance value increased three times. When the temperature changed
perature was close to the finger temperature, the resistances of the
from 20 ◦ C to 40 ◦ C, the resistance variance rate of 21.7 % was
rGO temperature sensor changed by 0.3 % and −0.8 %, respectively.
obtained using Eq. (1). However, when the temperature changed
When the difference between the rGO temperature sensor and the
from 120 ◦ C to 140 ◦ C, which was a relatively high temperature, the
finger temperature was low, the fluctuation in the resistance values
resistance variance rate changed to 4.4 %. This was advantageous
was also low, as shown in Fig. 6(c) and (d). When the sensor tem-
in the detection of body temperature because the rGO temperature

6
H. Jung and H. Lee
perature was higher than the finger temperature, the resistances
of the rGO temperature sensor changed in the negative direction
of the initial resistances, as shown in Fig. 6(e) and (f). At relatively
high temperatures of 40 ◦ C and 50 ◦ C, the resistances changed by
−2.5 % and −7.5 %, respectively. Consequently, the rGO temper-
ature sensor showed a reversal of the resistance variance based
on a finger temperature of 33 ◦ C. The resistance variance increased
as the difference between the rGO temperature sensor and finger
temperature increased.
The GO layer was coated and reduced on a glass substrate with
a green phosphorescent OLED to test the influence of laser irradi-
ation, as shown in Fig. 7(a). The current density of the device with
the rGO layer was nearly the same as that of the device without the
rGO layer, as shown in Fig. 7(b). For instance, the current densities
of the device without and with the rGO layers were 1.51 mA/cm2
and 1.43 mA/cm2 at 4.5 V, respectively. This result implies that laser
irradiation for GO reduction rarely affects the electrical properties
of OLEDs. However, the luminance of the device with the rGO layer
was lower than that of the device without the rGO layer. For exam-
ple, the luminance values of the device with and without the rGO
layers were 1036 cd/m2 and 619 cd/m2 at 4.5 V, respectively. This
was due to the absorption of the rGO layer. Therefore, the lumi-
nous current efficiency of the device with the rGO layer was lower
than that of the device without the rGO layer, as shown in Fig. 7(c).
Nevertheless, the EL spectra of the devices were nearly the same
regardless of the rGO layer, as shown in Fig. 7(d). The main emis-
sion peaks of the EL spectra of the devices with and without the rGO
layers were 516 nm and 514 nm, respectively. These results suggest
that the developed rGO process and the film can be applied suffi-
ciently to the OLED displays by optimizing the thickness of the rGO
layers, although the rGO layer slightly reduces the luminance and
efficiency of the OLEDs.
4. Conclusions
We demonstrated a semi-transparent rGO temperature sensor
for liveness detection and anti-spoofing of mobile phone authenti-
cation by reducing GO via laser light irradiation as a suitable process
for OLEDs. The rGO was produced by reducing the top of the GO
sheet via laser light source irradiation. The rGO temperature sensor
showed a characteristic of linear resistance change with respect to
the initial resistance value at low to high temperature range. Using
the temperature change characteristic, the resistance of the rGO
showed a sensitive temperature change even when the finger was
touched on the buffer layer of the polyimide film. Moreover, the
electrical properties of the OLEDs changed rarely when the laser
light was irradiated for GO reduction. Therefore, by checking the
temperature of the finger to prevent forgery during fingerprint
authentication, the rate of change of resistance according to fin-
ger touch showed the possibility of applying it to the OLED display
panel.
CRediT authorship contribution statement
Hanyung Jung: Conceptualization, Methodology, Validation,
Formal analysis, Investigation, Resources, Writing - original draft.
Hyunkoo Lee: Methodology, Validation, Formal analysis, Inves-
tigation, Resources, Writing - original draft, Supervision, Project
administration, Funding acquisition.
Declaration of Competing Interest
The authors declare that they have no known competing finan-
cial interests or personal relationships that could have appeared to
influence the work reported in this paper.
7
Sensors and Actuators A 331 (2021) 112876
Acknowledgements
This research was partly supported by the Sookmyung Women’s
University Research Grants (1-2103-2001) and in part by the Elec-
tronics and Telecommunications Research Institute (ETRI) grant
funded by the Korean government (21ZB1200) and in part by the
Korea Evaluation Institute of Industrial Technology (KEIT) grant
funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea)
(20015805, Development of material parts and processing tech-
nology for post InP fluorescence quantum dot) and in part by the
National Research Foundation of Korea (NRF) grant funded by the
Korea government (MSIT) (No. 2021R1F1A1045517).
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Biographies
Hanyung Jung received the B.S. and the M.S. degree in
Electronics Engineering from Kyungpook National Uni-
versity in 2000 and 2005, respectively. He worked as a
circuit design engineer in LG Display Company for Mon-
itor development, Korea from 2005 to 2009. He received
his Ph.D. degree in 2014 from Seoul National University
with supercapacitors and minor in MEMS. He worked as a
staff engineer in SAMSUNG Display Company from 2014
for the photoelectric sensors and flexible display. He has
been with Seoyeong University as an assistant professor
since 2019. He is interested in nanotechnology and sensor
applications.
Hyunkoo Lee received his B.S. and M.S. Electrical Engi-
neering degrees from Seoul National University in 2004
and 2006, respectively. He was a junior researcher in the
Monitor Circuit Design Team of LG Display from 2006 to
2009. He received his Ph.D. Electrical Engineering degree
in 2013, also from Seoul National University. He was a
senior researcher from 2013 to 2020 in the Reality Display
Research Section of Electronics and Telecommunications
Research Institute (ETRI). He has been with Sookmyung
Women’s University as an assistant professor since 2020.
His research interests include optoelectronics devices
such as OLEDs, quantum dot-LEDs, and microdisplays.