FDD6685

May 2011

FDD6685
30V P-Channel PowerTrench MOSFET
General Description Features
This P-Channel MOSFET is a rugged gate version of • –40 A, –30 V. RDS(ON) = 20 mΩ @ VGS = –10 V
Fairchild Semiconductor’s advanced PowerTrench RDS(ON) = 30 mΩ @ VGS = –4.5 V

process. It has been optimized for power management • Fast switching speed
applications requiring a wide range of gave drive • High performance trench technology for extremely
low RDS(ON)
voltage ratings (4.5V – 25V).
• High power and current handling capability
• Qualified to AEC Q101

D
G G

S
TO-252
D

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol Parameter Ratings Units

VDSS Drain-Source Voltage –30 V
VGSS Gate-Source Voltage ±25 V
ID Continuous Drain Current @TC=25°C (Note 3) –40
@TA=25°C (Note 1a) –11 A
Pulsed, PW ≤ 100µs (Note 1b)
–100
PD Power Dissipation for Single Operation (Note 1) 52 W
(Note 1a) 3.8
(Note 1b) 1.6
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C

Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.9 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry.
For a copy of the requirements, see AEC Q101 at http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.

2011 Fairchild Semiconductor Corporation FDD6685 Rev D1

 FDD6685
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDD6685 FDD6685 13” 12mm 2500 units

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Drain-Source Avalanche Ratings (Note 4)

EAS Single Pulse Drain-Source ID = –11 A 42 mJ
Avalanche Energy
IAS Maximum Drain-Source –11 A
Avalanche Current
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –30 V
∆BVDSS Breakdown Voltage Temperature
ID = –250 µA, Referenced to 25°C –24 mV/°C
∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA
IGSS Gate–Body Leakage VGS = ±25V, VDS = 0 V ±100 nA

On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.8 –3 V
∆VGS(th) Gate Threshold Voltage ID = –250 µA, Referenced to 25°C 5 mV/°C
∆TJ Temperature Coefficient
RDS(on) Static Drain–Source VGS = –10 V, ID = –11 A 14 20 mΩ
On–Resistance VGS = –4.5 V, ID = –9 A 21 30
VGS = –10 V,ID = –11 A,TJ=125°C 20
ID(on) On–State Drain Current VGS = –10 V, VDS = –5 V –20 A
gFS Forward Transconductance VDS = –5 V, ID = –11 A 26 S

Dynamic Characteristics
Ciss Input Capacitance VDS = –15 V, V GS = 0 V, 1715 pF
Coss Output Capacitance f = 1.0 MHz 440 pF
Crss Reverse Transfer Capacitance 225 pF
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 3.6 Ω

Switching Characteristics (Note 2)

td(on) Turn–On Delay Time VDD = –15 V, ID = –1 A, 17 31 ns
tr Turn–On Rise Time VGS = –10 V, RGEN = 6 Ω 11 21 ns
td(off) Turn–Off Delay Time 43 68 ns
tf Turn–Off Fall Time 21 34 ns
Qg Total Gate Charge VDS = –15V, ID = –11 A, 17 24 nC
Qgs Gate–Source Charge VGS = –5 V 9 nC
Qgd Gate–Drain Charge 4 nC

Drain–Source Diode Characteristics and Maximum Ratings

VSD Drain–Source Diode Forward VGS = 0 V, IS = –3.2 A (Note 2) –0.8 –1.2 V
Voltage
Trr Diode Reverse Recovery Time IF = –11 A, 26 ns
Qrr Diode Reverse Recovery Charge diF/dt = 100 A/µs 13 nC

FDD6685 Rev D1
 FDD6685
Electrical Characteristics TA = 25°C unless otherwise noted

Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) RθJA = 40°C/W when mounted on a b) RθJA = 96°C/W when mounted

1in2 pad of 2 oz copper on a minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
PD
3. Maximum current is calculated as: RDS(ON) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V.

4. Starting TJ = 25°C, L = 0.69mH, IAS = –11A

FDD6685 Rev D1
 FDD6685
Typical Characteristics

40 2.4
VGS = -10V -4.5V
-4.0V VGS = -3.5V
2.2

DRAIN-SOURCE ON-RESISTANCE
-6.0V -5.0V
-ID, DRAIN CURRENT (A)

30 2

NORMALIZED
1.8
-4.0V
-3.5V 1.6
20
-4.5V
1.4 -5.0V
-6.0V
10 1.2
-3.0V -8.0V
1 -10V

0 0.8
0 1 2 3 0 2 4 6 8 10
-VDS, DRAIN-SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6 0.08
ID = -11.0A
ID = -5.5A
DRAIN-SOURCE ON-RESISTANCE

VGS = -10V
RDS(ON), ON-RESISTANCE (OHM)

1.4
0.06
NORMALIZED

1.2

0.04
o
TA = 125 C
1

0.02 o
0.8 TA = 25 C

0.6 0
-50 -25 0 25 50 75 100 125 150 175 2 4 6 8 10
TJ, JUNCTION TEMPERATURE (oC) -VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with

Temperature. Gate-to-Source Voltage.

40 100
TA = -55oC VGS = 0V
VDS = -5V o
-IS, REVERSE DRAIN CURRENT (A)

125 C
10
-ID, DRAIN CURRENT (A)

30 o
TA = 125 C
o 1
25 C
25oC
20 0.1

-55oC
0.01
10
0.001

0 0.0001
1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDD6685 Rev D1
 FDD6685
Typical Characteristics

10 2400
ID = -11.0 A f = 1MHz
-VGS, GATE-SOURCE VOLTAGE (V)

VDS = 10V VGS = 0 V

8
1800

CAPACITANCE (pF)
30V
Ciss
6
20V 1200
4

Coss
600
2

Crss
0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

1000 100
SINGLE PULSE
P(pk), PEAK TRANSIENT POWER (W)

RθJA = 96°C/W
100 80 TA = 25°C
ID, DRAIN CURRENT (A)

100µs
1ms
RDS(ON) LIMIT
10ms
10 100ms 60
1
10s
1 DC 40
VGS = 10V
SINGLE PULSE
0.1 RθJA = 96oC/W 20
TA = 25oC

0.01 0
0.01 0.10 1.00 10.00 100.00 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.

1
TRANSIENT THERMAL RESISTANCE

D = 0.5
r(t), NORMALIZED EFFECTIVE

RqJA(t) = r(t) * RqJA

0.2
RqJA = 96 °C/W
0.1 0.1
0.05
P(pk)
0.02
t1
0.01
0.01 t2
TJ - TA = P * RqJA(t)
SINGLE PULSE Duty Cycle, D = t1 / t2

0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

FDD6685 Rev D1
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™ FPS™ Power-SPM™ The Power Franchise®
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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification
Advance Information
Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Formative / In Design
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild

Obsolete Not In Production Semiconductor. The datasheet is for reference information only.
Rev. I54