Journal of Luminescence 239 (2021) 118393

Contents lists available at ScienceDirect

Journal of Luminescence
journal homepage: www.elsevier.com/locate/jlumin

Influence of the doping type on the temperature dependencies of the

photoluminescence efficiency of InGaAlAs/InGaAs/InP heterostructures
Innokenty I. Novikov a, *, Alexey M. Nadtochiy b, Aleksandr Yu Potapov c, Andrey G. Gladyshev a,
Evgenii S. Kolodeznyi a, Stanislav S. Rochas a, Andrey V. Babichev a, Vladislav V. Andryushkin a,
Dmitriy V. Denisov d, Leonid Ya Karachinsky a, Anton Yu Egorov e, f, Vladislav E. Bougrov a
a
ITMO University, St. Petersburg, 197101, Russia
b
National Research University Higher School of Economics, St. Petersburg, 190008, Russia
c
Peter the Great St.Petersburg Polytechnic University, St. Petersburg, 195251, Russia
d
Saint Petersburg Electrotechnical University “LETI”, St. Petersburg, 197376, Russia
e
Connector Optics LLC, St. Petersburg, 194292, Russia
f
Alferov University, St. Petersburg, 194021, Russia

A R T I C L E I N F O A B S T R A C T

Keywords: The temperature dependencies of photoluminescence efficiency of InGaAlAs/InGaAs/InP heterostructures with

Molecular beam epitaxy 1550 nm range strained quantum wells have been studied. The heterostructures had nine In0.74Ga0.26As quantum
Quantum well wells which were separated by In0.53Al0.20Ga0.27As barriers. The barriers were δ-doped with n- and p-type
Photoluminescence
dopants with different layer concentrations of charge carriers. The both p-type and n-type doping of barriers
Heterostructures
leads to slight increase in the efficiency when doping level not exceeding values of (1–5)⋅1012 cm− 2. Moreover,
doping with an n-type dopant leads to a significant increase in the width of the photoluminescence spectrum,
while doping with a p-type dopant leads to a decrease in its width, compared to a heterostructure with undoped
barrier layers.

1. Introduction
Lasers of 1550 nm spectral range are of great interest due to the
presence of a minimum of optical losses in the optical fiber, as well as the
presence of effective erbium fiber amplifiers [1] which provide ampli­
fication of optical signals without distortion. Significant advances have
been achieved in the creation of lasers of this spectral range on quantum
dots [2]. However, structures based on InGaAsP/InP materials, which
are produced by metal organic chemical vapor deposition (MOCVD), are
usually used to create lasers operating at wavelengths of 1520–1580 nm
[3]. The disadvantage of this material system is the low energy of
electron localization in quantum wells (QWs). The concept of doping
with respect to QWs structures is well known and was proposed in Refs.
[4,5]. In particular, it was assumed that the development of this
approach would be most applicable to quantum dots (QD)-based lasers
due to the lower density of states in them [6]. By n-type doping the
increase of linewidth enhancement factor 1300 nm QD-based lasers is
realized [7]. Using a p-doping in QD-based lasers would reduce
transparence carrier density and improve the differential gain [8], as
well as reduce the broadening inhomogeneity. At the same time, it was
shown that along with this, doping leads to deterioration in modulation
characteristics, limiting the performance at the level of 10 Gb/s [9].
Recently it has been shown that an increase of acceptors concentration
leads to an increase in gain compression due to an increase of internal
losses in the active region and thus limits the maximum modulation
bandwidth [10] Other limiting factors for p-doped QD-based lasers
include a decrease in modal enhancement due to the inter-valance band
absorption and increased nonradiative Auger recombination [11–13].
Using p-doping, GaAs-based substrate QD-based lasers operating at
1100 and 1300 nm have achieved a maximum 3-dB bandwidth of 11 and
8 GHz, respectively, which are only higher than those of the undoped
devices [14].
For the case of QWs active regions, the use of n-type modulation
doped (MD) multiple QWs (MQWs) structures (with doping of barrier
layers) allows to lower the threshold current density as for the case of
MOCVD-grown 1300-nm [15], 1500-nm InGaAsP/InP-based lasers [16],

* Corresponding author.
E-mail address: novikov@switch.ioffe.ru (I.I. Novikov).

https://doi.org/10.1016/j.jlumin.2021.118393
Received 29 March 2021; Received in revised form 16 July 2021; Accepted 10 August 2021
Available online 11 August 2021
0022-2313/© 2021 Elsevier B.V. All rights reserved.
I.I. Novikov et al.
and for MBE-grown 1300-nm InAsP/InP-based lasers [17–20]. At the
same time, by p-type doping the enhancement of the differential gain, T0
characteristic temperature and the reduction of the turn-on delay time
for MOCVD-grown 1500-nm GaInAs/InP-based [5], 1300-nm
InGaAsP/InP-based [21] as well as for MBE-grown 1300-nm
InAsP/InP-based lasers [18,20] are observed. Consequently, p-type
MD MQWs active region is promising from the point of view of imple­
mentation high-speed lasers. Moreover, the reduction of the threshold
carrier densities in the n-type MD-MQW laser can be explained by the
reduction of intervalence band absorption loss. In opposite, the p-type
doping increase the internal loss due to increase in the absorption loss
caused by the increase of the intervalence band absorption [18].
Beryllium (Be) in comparison with zinc (Zn) has a lower diffusion
coefficient, and, as a result, allows to localize impurity atoms to a greater
extent in barrier layers in comparison with Zn, which allows to reduce
excess absorption in the active layer [20]. Moreover, usage of carbon (C)
instead of Be allows additional localization of impurities in barriers [22,
23].
At this time, by application of p-doped barriers the increase of
vertical-cavity surface-emitting laser (VCSELs) modulation bandwidth is
realized. The 12 Gbps VCSELs modulation speed is realized [24].
Moreover, it was realized the increase of -3dB bandwidth to 21 GHz in
relation with undoped case of 850 nm VCSELs (18 GHz) [25]. Here, we
present the results of complex studies of the optical properties of
InGaAlAs/InGaAs/InP heterostructures with strained InGaAs QWs. The
barrier layers of the heterostructures were selectively doped (carbon or
silicon) to the values of layer concentrations (1–5)⋅1012 cm− 2. The re­
sults of this study can be applied for the improve the performance
long-wavelength VCSELs [26,27].
2. Experiment
For our experiments, six semiconductor heterostructures with
strained InGaAs QWs were grown on semi-insulated InP (100) substrates
using a Riber 49 molecular beam epitaxy (MBE) system. A 200-nm
In0.52Al0.48As buffer layer was grown on the InP substrate and used as
Fig. 1. The schematic representation of the grown structures and band diagram.
2
Journal of Luminescence 239 (2021) 118393
a barrier for charge carriers. The In0.53Ga0.27Al0.20As layer with the band
gap ~1.03 eV was used as the confinement and barrier layers. The active
region was grown between the In0.53Ga0.27Al0.20As confinement layers
and consisted of nine 3.7-nm-thick In0.74Ga0.26As QWs. The QWs were
separated by 12-nm-thick δ-doped In0.53Ga0.27Al0.20As barriers (see
Fig. 1). The heterostructures differed in the value and type of doping of
the barrier layers. Structure “U19” was grown as a reference sample with
undoped barriers. The “Si10” and “Si50” samples were grown with
silicon-doped barrier layers with a doping concentration of 1⋅1012cm− 2
and 5⋅1012cm− 2 respectively. The “C10”, “C20” and “C50” samples were
grown with carbon-doped barrier layers with a doping concentration of
1⋅1012cm− 2, 2⋅1012cm− 2 and 5⋅1012cm− 2 respectively. Carbon was used
as a p-type dopant because it does not diffuse, unlike the commonly used
beryllium. δ-Doping was chosen due to reproducibility and high accu­
racy of the concentrations of the dopants. The heterostructures were
grown using two gallium, two aluminum and one indium sources.
Growth rates of gallium sources were 0.5 and 0.35 Å/s, aluminum
sources – 0.38 and 0.92 Å/s, indium source – 1 Å/s. The growth tem­
perature during the growth process was 630 ◦ C. The description of
grown heterostructures is summarized in Table 1.
The active region was covered on the surface side by a 30-nm-thick
In0.52Al0.48As layer, which was covered by a thin In0.53Ga0.47As cap
layer to prevent surface oxidation. Fig. 1 shows the schematic repre­
sentation of the grown structures and band diagram.
The excitation of photoluminescence (PL) was performed by a
YAG: Nd laser with a wavelength of 527 nm and maximum output power
of 500 mW. The optical power of the laser was adjusted using neutral
light filters. The diameter of the focused laser spot is ~30 μm. The
measurements were carried out in a cryostat with temperature
Table 1
The description of the grown heterostructures.
Structure C10 C20 C50 U19 Si10 Si50
Dopant С С С – Si Si
Concentration, 1012 cm− 2
1.0 2.0 5.0 0.0 1.0 5.0
I.I. Novikov et al.
stabilization in the range of 13–325 K. A germanium photodiode cooled
by liquid nitrogen is used as a detector. The lock-in technique was used
for characterization.
3. Results and discussion
Fig. 2 displays the PL spectra of the six heterostructures at room
temperature. The excitation power density is 600 W/cm2.
It can be seen that PL peak position corresponding to the InGaAs QWs
for all samples has the same energy of 0.810 eV (1530 nm). This cor­
responds to the transition energy from the ground state level of electrons
(e1) to the ground state level of heavy holes (hh1) in QWs. There is also a
slight inflection of the high-energy part of the “Si 50” structure spec­
trum, which occurs due to the radiative recombination in the barrier
layers. Fig. 2 shows that the samples have different peak and integrated
PL intensities. The highest intensity at the peak of the PL spectrum is
shown by the “C10” sample doped with carbon to the level of 1.0 *
1012cm− 2, although the difference is rather small.
The standard equation for the charge carrier recombination rate (R)
is used for the analysis of recombination processes [28]. It is assumed
that the system is in equilibrium and the recombination rate is equal to
the rate of charge carrier generation. In this case, the generation rate is
proportional to the excitation power density Pex:
Pex ∼ R = An + Bn2 + Cn3 , (1)
Where n is the charge carrier concentration (the concentration of
electrons is equal to the concentration of holes), An is Shockley-Read-
Hall (SRH) recombination rate, Bn2 is the radiative recombination
rate, Cn3 is the rate of Auger recombination. According to equation (1),
at low levels of excitation, the SRH recombination dominates, and at
high levels, the Auger mechanism dominates. At intermediate levels of
excitation, the radiative recombination process can be expected to be
dominant. The contribution of various recombination processes can be
calculated by approximating the dependence of the integral PL intensity
on the excitation power density (see Fig. 3) by equation (1). The
contribution of Auger recombination at these excitation levels is insig­
nificant. The approximation will be more clearly if we change the co­
ordinate axes to the laser power density depends vs integral PL. As a
result of the approximation, we can determine the inflection point of
Fig. 2. PL spectra of samples measured at 300 K. The excitation power density is 600 W/cm2. The PL intensity scale is represented on a semi-logarithmic scale.
3
Journal of Luminescence 239 (2021) 118393
dependence where radiative and nonradiative recombination rates are
equal (Bn2 = An). The lower excitation level corresponding to the in­
flection point indicates the lower the excitation levels where the radi­
ative recombination (Bn2) begins to dominate, and therefore the optical
quality of the structure is higher.
Undoped sample “U19” was approximated by equation (1) and the
inflection point has been defined (see Fig. 3). PL of this sample dem­
onstrates superlinear growth at low excitation densities (nonradiative
recombination dominates), which transits to linear growth (radiative
recombination dominates) of excitation densities above 1850 W/cm2
(see Table 2). However, the doped samples demonstrate a qualitatively
different behavior of the PL intensity with an increase of the excitation
density: the dependencies do not have a pronounced superlinear growth
area. To describe this behavior, it is necessary to supplement the model
with the mechanism of recombination of nonequilibrium charge carriers
with dopant. Nonequilibrium charge carriers are born as a result of
optical excitation. Doping charge carriers are a result of the ionization of
dopant impurities. In this case, the radiative recombination of charge
carriers (Bn2) must be supplemented by the linear term n0n, where n0 is
the coefficient of the concentration of dopant impurities [29]. Equation
(1) for the approximation of doped samples can be written as:
Pex ∼ An + n0 n + Bn2 , (2)
where sum (n0n + Bn2) is radiative recombination and we neglected
Auger mechanism. As a result of the approximation by equation (2), two
inflection points on the dependence can be distinguished. The first in­
flection point at which the radiative recombination (n0n + Bn2) is equal
to the non-radiative recombination (An). The second inflection point on
the dependence indicated where linear (n0n) and quadratic (Bn2) com­
ponents of the radiative recombination are equal.
In this paper, we were able to approximate the dependencies of all
doped structures using Equation (2) (see Fig. 3). Samples “C10”, “C20”,
and “Si10” have the highest integral PL intensity over the entire range of
excitation power densities. The undoped structure has an almost one-
order-of-magnitude lower integral PL intensity compared to samples
“C10”, “C20”, and “Si20” at low excitation densities. However, an
equalization of the integral PL intensities is observed at a high level of
excitation.
Table 2 shows the obtained values of the excitation power density at
I.I. Novikov et al. Journal of Luminescence 239 (2021) 118393

Fig. 3. Dependence of the excitation power on the integral PL intensity and corresponding approximation curves. The curves are shifted along the horizontal axis for
better visibility. Solid symbols show the inflection points of the dependencies calculated as results of the approximation.

the inflection points of the dependencies (see Fig. 3). In heterostructures

Table 2
with doped barrier layers, as expected we see the increase of value of
The excitation power density in the inflection points of the dependencies
power density where transition from linear (impurity) optical recom­
(Fig. 3.).
bination to quadratic optical recombination is occurred, as well as we
Structure U19 C10 C20 C50 Si10 Si50 observe a decrease of excitation power density at which radiative
Pex at An = n0n + Bn2, W/cm2 1850 66 60 400 78 28 recombination begins to dominate over nonradiative. At doping level of
Pex at n0n = Bn2, W/cm2 – 11 12 87 63 2 1–2∙1012 cm− 2, the radiative recombination dominates at 60–80 W/
cm2, and these structures exhibit bright PL over the entire range of
excitation densities. A further increase in doping leads to a noticeable
quenching of luminescence and a corresponding increase in the power

Fig. 4. Temperature dependencies of integral PL intensity at the excitation power density of 600 W/cm2, on a semi-logarithmic scale.

4
I.I. Novikov et al.
density of the radiative recombination dominance (except for the
structure “Si50”).
Thus, with moderate doping levels, the efficiency of photo­
luminescence increases at low excitation levels, which may be con­
nected to a change in time of carrier capture into QWs.
Fig. 4 shows the temperature dependencies of integral PL intensity at
the excitation power density of 600 W/cm2.
When the temperature increases from 13 to 325 K, the drop of the
integral PL intensity is different for all samples. The sample with the
highest temperature stability among the studied structures is the “C10”
sample which is doped by carbon with concentration of 1⋅1012 cm− 2. It
can also be seen that the “C20” sample with doping level twice as high as
“C10” has almost identical stability. To obtain the temperature depen­
dence of the width of the PL spectrum, the integral characteristic of the
spectrum (Δhν) was used. This characteristic is the root mean square
deviation of the quantum energy (hν) from the mathematical expecta­
tion (RMS). The integral characteristic of the spectrum is used in the
study of complex, noisy or asymmetrical waveforms. This approach al­
lows us to obtain a more stable estimation of the PL spectrum width,
compared to the using of full width at half maximum (FWHM). The root
mean square deviation Δhν was calculated by equation (3):
√̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅
√∫ +∞
√ PL(hν)⋅(hνmean − hν)2 dhν
Δhν = RMS = √ − ∞ ∫ +∞
PL(hν)dhν
− ∞
where PL(hν) is the PL intensity for the quantum energy hν, hνmean is the
mathematical expectation of the quantum energy hν. The hvmean is
calculated using equation (4):
∫ +∞
PL(hν)⋅hνdhν
hνmean = −∫∞+∞ . (4)
PL(hν)dhν
− ∞
Fig. 5 shows the temperature dependencies of the RMS of the PL
spectra after processing the experimental data.
Fig. 6 shows PL spectra of the “Si50” sample at different tempera­
tures and PL spectra of the “Si50” sample at 13 K with different exci­
tation levels.
The samples “Si10” and “Si50” have the highest RMS values. This
fact is associated with the recombination of carriers in the barrier layer
Fig. 5. Temperature dependencies of the RMS of the PL spectra. Excitation power density 600 W/cm2.
Journal of Luminescence 239 (2021) 118393
(see Fig. 6a). As the temperature decreases, an extra peak (B) appears in
the high-energy part of the PL spectrum. Fig. 6b shows that at low
temperature, the spectra are reproduced in a wide range of the excita­
tion power density and do not change its shape. Also, the radiation in­
tensity of the barrier layer in relation to the radiation intensity of the
QWs (A) does not change with the excitation power density. It means
that the probabilistic recombination processes in the QWs and barrier
are independent on the pump level. The appearance of PL from barrier
layers is not related to the saturation of the PL from QWs, since in this
case, the PL from barrier layers should be attenuated with a decrease in
excitation. It is assumed that PL from barrier layers is associated with the
bending of the energy zones near the barrier-well interface due to high
doping level and the deterioration of the charge carriers transport with a
decrease in temperature. As a result, charge carriers are accumulated in
the barrier layers and then recombine with emitting of quanta whose
energy is equal to the energy of the band gap of the barrier layers.
4. Conclusion
In summary, the temperature dependencies of photoluminescence
efficiency of InGaAlAs/InGaAs/InP heterostructures with 1550 nm
range strained quantum wells have been studied. The analysis of the
integral PL intensities for all studied heterostructures allowed to define
, (3)
the values of the inflection points and the corresponding excitation
power densities where the radiative and non-radiative recombination
are equal. It was found that the moderate doping (up to cm− 2) of the
barrier layers increases the efficiency of radiative recombination at low
excitation levels. The dependencies of the spectrum width on the exci­
tation power density were analyzed. The width of the spectra of the
doped heterostructures exceeds the width of the spectrum of the undo­
ped sample. This fact is related to the levels of holes that are occupied by
charge carriers from doped barrier layers. The appearance of the second
peak at PL spectrum with a decrease in temperature was found for
samples doped with silicon up to 5⋅1012 cm− 2. The second peak is
associated with the radiation of the InGaAlAs confinement or barrier
layers. It is assumed that this fact is associated with the bending of the
energy zones near the barrier-quantum well interface due to the high
concentration of silicon doping. Obtained results can be used in the
development of light-emitting structures for 1550 nm spectral range.
5
I.I. Novikov et al.
Fig. 6. (a) PL spectra of the “Si50” sample at different temperatures. (b) PL spectra of the “Si50” sample at 13 K and different excitation levels.
Silicon doping may be promising for creating lasers and super­
luminescent diodes tunable in a wide spectral range.
Author statement
Innokenty I. Novikov: Supervision and Writing - Original Draft.
Alexey M. Nadtochiy: Investigation, Formal analysis, Data curation and
Funding acquisition. Aleksandr Yu. Potapov: Investigation. Andrey G.
Gladyshev: Methodology. Evgenii S. Kolodeznyi: Resources. Stanislav S.
Rochas: Resources. Andrey V. Babichev: Formal analysis and Writing -
Original Draft. Vladislav V. Andryushkin: Writing – original draft and
Investigation. Dmitriy V. Denisov: Methodology. Leonid Ya. Kar­
achinsky: Writing – review & editing and Validation. Anton Yu. Egorov:
6
Journal of Luminescence 239 (2021) 118393
Conceptualization and Supervision. Vladislav E. Bougrov: Supervision,
Project administration and Writing - Review & Editing.
Declaration of competing interest
The authors declare that they have no known competing financial
interests or personal relationships that could have appeared to influence
the work reported in this paper.
Acknowledgments
The work was carried out with the support of the Ministry of Science
and Higher Education of the Russian Federation (research project No.
I.I. Novikov et al.
2019-1442). N. A. M. thanks for the support of the Program of Funda­
mental Research of the National Research University "Higher School of
Economics" in terms of measurements.
References
[1] A.W. Naji, B.A. Hamida, X.S. Cheng, M.A. Mahdi, S. Harun, S. Khan, W.F. Al-
Khateeb, A.A. Zaidan, B.B. Zaidan, H. Ahmad, Review of Erbium-doped fiber
amplifier, Int. J. Phys. Sci. 6 (2011) 4674–4689, https://doi.org/10.5897/
IJPS11.782.
[2] I.I. Novikov, N.Yu Gordeev, M.V. Maximov, YuM. Shernyakov, A.E. Zhukov, A.
P. Vasil’ev, E.S. Semenova, V.M. Ustinov, N.N. Ledentsov, D. Bimberg, N.
D. Zakharov, P. Werner, Ultrahigh gain and non-radiative recombination channels
in 1.5 μm range metamorphic InAs–InGaAs quantum dot lasers on GaAs substrates,
Semicond. Sci. Technol. 20 (1) (2004) 33, https://doi.org/10.1088/0268-1242/
20/1/005.
[3] J. Zhu, MOCVD Growth of III-V Compounds for Long Wavelength Optoelectronic
Devices, Master’s Thesis, Nanyang Technological University, Singapore, 2005,
https://doi.org/10.32657/10356/4075.
[4] Kerry J. Vahala, C.E. Zah, Effect of doping on the optical gain and the spontaneous
noise enhancement factor in quantum well amplifiers and lasers studied by simple
analytical expressions, Appl. Phys. Lett. 52 (23) (1988) 1945–1947, https://doi.
org/10.1063/1.99584.
[5] C.E. Zah, R. Bhat, S.G. Menocal, F. Favire, N.C. Andreadakis, M.A. Koza, C. Caneau,
S.A. Schwarz, Y. Lo, T.P. Lee, Cavity length and doping dependence of 1.5-mu m
GaInAs/GaInAsP multiple quantum well laser characteristics, IEEE Photon.
Technol. Lett. 2 (4) (1990) 231–233, https://doi.org/10.1109/68.53245.
[6] N.T. Yeh, J.M. Lee, T.E. Nee, J.I. Chyi, Self-assembled In/sub 0.5/Ga/sub 0.5/As
quantum-dot lasers with doped active region, IEEE Photon. Technol. Lett. 12 (9)
(2000) 1123–1125, https://doi.org/10.1109/68.874209.
[7] Y.Q. Qiu, Z.R. Lv, H. Wang, H.M. Wang, X.G. Yang, T. Yang, Improved linewidth
enhancement factor of 1.3-μ m InAs/GaAs quantum dot lasers by direct Si doping,
AIP Adv. 11 (2021), 055002, https://doi.org/10.1063/5.0044313.
[8] Z. Zhang, D. Jung, J.C. Norman, P. Patel, W.W. Chow, J.E. Bowers, Effects of
modulation p doping in InAs quantum dot lasers on silicon, Appl. Phys. Lett. 113
(2018), 061105, https://doi.org/10.1063/1.5040792.
[9] K. Otsubo, N. Hatori, M. Ishida, S. Okumura, T. Akiyama, Y. Nakata, H. Ebe,
M. Sugawara, Y. Arakawa, Temperature-insensitive eye-opening under 10-Gb/s
modulation of 1.3-μm p-doped quantum-dot lasers without current adjustments,
Jpn. J. Appl. Phys. 43 (8B) (2004), https://doi.org/10.1143/JJAP.43.L1124.
L1124.
[10] A. Martinez, Y. Li, L.F. Lester, A.L. Gray, Microwave frequency characterization of
undoped and p-doped quantum dot lasers, Appl. Phys. Lett. 90 (25) (2007) 251101,
https://doi.org/10.1063/1.2749432.
[11] M.L. Huberman, A. Ksendzov, A. Larsson, R. Terhune, J. Maserjian, Optical
absorption by free holes in heavily doped GaAs, Phys. Rev. B 44 (3) (1991) 1128,
https://doi.org/10.1103/PhysRevB.44.1128.
[12] I.P. Marko, N.F. Massé, S.J. Sweeney, A.D. Andreev, A.R. Adams, N. Hatori,
M. Sugawara, Carrier transport and recombination in p-doped and intrinsic 1.3 μ m
in As∕ Ga as quantum-dot lasers, Appl. Phys. Lett. 87 (21) (2005) 211114, https://
doi.org/10.1063/1.2135204.
[13] I.P. Marko, A.R. Adams, S.J. Sweeney, D.J. Mowbray, M.S. Skolnick, H.Y. Liu, K.
M. Groom, Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3-/
spl mu/m quantum-dot lasers, IEEE J. Sel. Top. Quant. Electron. 11 (5) (2005)
1041–1047, https://doi.org/10.1109/JSTQE.2005.853847.
[14] S. Fathpour, Z. Mi, P. Bhattacharya, Small-signal modulation characteristics of p-
doped 1.1-and 1.3-μm quantum-dot lasers, IEEE Photon. Technol. Lett. 17 (11)
(2005) 2250–2252, https://doi.org/10.1109/LPT.2005.857242.
Journal of Luminescence 239 (2021) 118393
[15] K. Nakahara, K. Uomi, T. Tsuchiya, A. Niwa, T. Haga, T. Taniwatari, 1.3-/spl mu/m
InGaAsP-InP n-type modulation-doped strained multiquantum-well lasers, IEEE J.
Sel. Top. Quant. Electron. 3 (1997) 166–172, https://doi.org/10.1109/
2944.605650.
[16] T. Yamamoto, T. Watanabe, S. Ide, I. Tanaka, H. Nobuhara, K. Wakao, Low
threshold current density 1.3-μm strained-layer quantum-well lasers using n-type
modulation doping, IEEE Photon. Technol. Lett. 6 (1994) 1165–1166, https://doi.
org/10.1109/68.329626.
[17] H. Shimizu, K. Kumada, N. Yamanaka, N. Iwai, T. Mukaihara, A. Kasukawa, Low
threshold 1.3 [micro sign] m InAsP n-type modulation doped MQW lasers grown
by gas-source molecular-beam epitaxy, Electron. Lett. 34 (1998) 888, https://doi.
org/10.1049/el:19980662.
[18] H. Shimizu, K. Kumada, N. Yamanaka, N. Iwai, T. Mukaihara, A. Kasukawa, 1.3-/
spl mu/m InAsP modulation-doped MQW lasers, IEEE J. Quant. Electron. 36
(2000) 728–735, https://doi.org/10.1109/3.845730.
[19] H. Shimizu, K. Kumada, N. Yamanaka, N. Iwai, T. Mukaihara, A. Kasukawa,
Submilliampere threshold current in 1.3/spl mu/m InAsP n-type modulation doped
MQW lasers grown by gas source molecular beam epitaxy, Electron. Lett. 34 (1998)
1591–1593, https://doi.org/10.1049/el:19981076.
[20] H. Shimizu, K. Kumada, N. Yamanaka, N. Iwai, T. Mukaihara, A. Kasukawa, 1.3 μm
InAsP p-type modulation doped MQW lasers grown by gas-source molecular-beam
epitaxy, J. Cryst. Growth 201 (1999) 896–900, https://doi.org/10.1016/s0022-
0248(98)01488-2.
[21] F. Kano, T. Yamanaka, N. Yamamoto, Y. Yoshikuni, H. Mawatari, Y. Tohmori,
M. Yamamoto, K. Yokoyama, Reduction of linewidth enhancement factor in
InGaAsP-InP modulation-doped strained multiple-quantum-well lasers, IEEE J.
Quant. Electron. 29 (1993) 1553–1559, https://doi.org/10.1109/
islc.1992.763558.
[22] S. Godey, S. Dhellemmes, A. Wilk, M. Zaknoune, F. Mollot, CBr4 and Be heavily
doped InGaAs grown in a production MBE system, J. Cryst. Growth 278 (2005)
600–603, https://doi.org/10.1016/j.jcrysgro.2004.12.075.
[23] P.H. Lei, C.D. Yang, M.Y. Wu, M.C. Wu, K.Y. Cheng, C.C. Lin, W.J. Ho, Effects of n-
type modulation-doping barriers and a linear graded-composition GaInAsP
intermediate layer on the 1.3 μ m AlGaInAs∕ AlGaInAs strain-compensated
multiple-quantum-well laser diodes, J. Vac. Sci. Technol. B: Microelectron.
Nanometer. Struct. Process. Measure Phenomena 24 (2006) 623–628, https://doi.
org/10.1116/1.2172954.
[24] N. Hatori, A. Mizutani, N. Nishiyama, A. Matsutani, T. Sakaguchi, F. Motomura,
F. Koyama, K. Iga, An over 10-Gb/s transmission experiment using a p-type delta-
doped InGaAs-GaAs quantum-well vertical-cavity surface-emitting laser, IEEE
Photon. Technol. Lett. 10 (1998) 194–196, https://doi.org/10.1109/68.655355.
[25] K.L. Chi, D.H. Hsieh, J.L. Yen, X.N. Chen, J. Chen, H.C. Kuo, Y.J. Yang, J.W. Shi,
850 nm VCSELs with P-type δ-doping in the active layers for improved high-speed
and high-temperature performance, IEEE J. Quant. Electron. 52 (2016) 1–7,
https://doi.org/10.1109/JQE.2016.2611439.
[26] A.V. Babichev, et al., 6-mW single-mode high-speed 1550-nm wafer-fused VCSELs
for DWDM application, IEEE J. Quant. Electron. 53 (2017) 1–8, https://doi.org/
10.1109/JQE.2017.2752700.
[27] S. Blokhin, A. Babichev, A. Gladyshev, L. Karachinsky, I. Novikov, A. Blokhin,
S. Rochas, D. Denisov, K. Voropaev, A. Ionov, N. Ledentsov, A. Egorov, Wafer-
fused, 1300 nm VCSELs with an active region based on superlattice, Electron. Lett.
(2021), https://doi.org/10.1049/ell2.12232.
[28] A.M. Nadtochiy, M. V Maximov, S.A. Mintairov, N.A. Kalyuzhnyy, S. Rouvimov, A.
E. Zhukov, InGaAs/GaAs hybrid quantum well-dot nanostructures: impact of
substrate orientation and recombination mechanisms, J. Phys. Conf. 917 (2017),
032001, https://doi.org/10.1088/1742-6596/917/3/032001.
[29] R. Olshansky, C. Su, J. Manning, W. Powazinik, Measurement of radiative and
nonradiative recombination rates in InGaAsP and AlGaAs light sources, IEEE J.
Quant. Electron. 20 (1984) 838–854, https://doi.org/10.1109/
JQE.1984.1072500.