NEC NPN SILICON TRANSISTOR 2SC3209 DESCRIPTION ‘The 203209 is designed for use in TV chroma output circuits and TV horizontal deflection output circuits. FEATURES © High voltage Vceo=300 V © High Electrostatic. _(E-B reverse bias, C=2 300 pF) Discharge Resistant VespR: TYP. 1000V ABSOLUTE MAXIMUM RATINGS ‘Maximum Temperatures Storage Temperature - Junction Temperature... . .-150 °C Maximum Maximum Power Dissipation (T, 785 to +150°C Vego Collector to Base Voltage - Veeo Collector to Emitter Voltage. Veao Emitter to Base Voltage . Ie Collector Current . ELECTRICAL CHARACTERISTICS (T,=25 °C) PACKAGE DIMENSIONS in millimeters ines) oBsiain Hl watt Goad i] 33 s| eid 38 | 10.024) a ‘aaah ‘Test Conditions? Veg 10 V,ig= 10 mA SyMBOL ‘uanacTenisti¢ MIN, TYP MAK. UNIT TEST CONDITIONS hee? 26 Curent Gain 160 20 Vee = 10, I¢= 10a ts Oday Time ow Veo=30V t Rise Time 190 te= 100.ma Storage Time 20 — " Fall Time 1m | tr Gain Bandwidth Product 50 MHz Vce=30V, Ig =—10mA Vesor Etectrosatie Discharge Resinant 1000 V see Test Creve | Cop Cutout Capacitance 2835 oF Vcan20V, Ig 0,f-1.0 He ‘eso Coltctor Coot Crrent 100A. Veg 200V.1e=0 le80 Emitter Cutoff Current 100 nA Veg = 5.0V,1¢=0 Vee* ‘Base to Emitter Voltage: 600 670 700 mv Vee = 10 V,1¢= 10 mA Veetat)* Collector Sturation Vologe 015 15 Vg 50mA, Ig 50mA Voctnt* Ba Station Volage 08015 _V__tgrS0mA. Ig" 50mA * Pd PWE300 pe, ty eylen? % Cestication of heey Rank ™ c r ange | @0-720 | 100~200 | 160-2602SC3209 TYPICAL CHARACTERISTICS (T,=25 °C) TOTAL POWER DISSIPATION vs AMBIENT TEMPERATURE. a : or Poe A a a 1 . i Hl & sels . : 12 E sol a ie G 5 Ur, = {Gan Botvty Pet 38 5-10 —=50=100 e-Emiter Cunt—mk 340 SAFE OPERATING AREAS (TRANSIENT THERMAL. RESISTANCE METHOD) = ay GREE $8 Ig-Cotectr Curent 2a "lo 20-— 80" 180 Foo 500-00 Voe~Coteter to Enter voage—v DC CURRENT GAIN ve. COLLECTOR CURRENT go Ji 39 3 a 8 A 2 orazes 12s 1920 501002008001000 I—Cetctr Curent =mh OUTPUT CAPACITANCE ve COLLECTOR To BASE VOLTAGE 100 7 mt 128 10-26-80 100200 500 1000 epColecte o Bare Voage—¥ 500 =1000 NEC COLLECTOR CURRENT vs GOLLECTOR TO EMITTER VOLTAGE ui T x Wak 10} oe oak Ig-Caectr Cuenta, eH 10 oe Colecor to Emit Votage-¥ COLLECTOR SATURATION VOLTAGE, BASE SATURATION. VOLTAGE ve, CoLLecron CUSRENT Votags—v 0 SatrationVakage—Y Veetasd~Calctr Sata 3 1-20 $9 1002 S00T000 Ig~Celector Cuneta COLLECTOR CURRENT 05 oa Daley Tine—5 tagStrage Times roe inet 01 10-20-50 100700 500 1000 I~Colector CreatNEC 28C3209 ELECTROSTATIC-DISCHARGE-RESISTANT TEST CIRCUIT eae ‘TEST CONDITION 1) EB reverse bies 2) C= 2300 pF 3) Apply one shot pluss to 0.U.T, (Transistor Under the Test by SW. sUOGEMENT REJECT; BV Ego wavetorm defect ‘Asa result fD.U.T. is not rejected, apply higher voltage to capacitor land tet again 341