TIP31/TIP31A/TIP31B/TIP31C — NPN Epitaxial Silicon Transistor

July 2008

TIP31/TIP31A/TIP31B/TIP31C
NPN Epitaxial Silicon Transistor
Features
• Complementary to TIP32/TIP32A/TIP32B/TIP32C

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol Parameter Value Units

VCBO Collector-Base Voltage : TIP31 40 V

: TIP31A 60 V
: TIP31B 80 V
: TIP31C 100 V

VCEO Collector-Emitter Voltage : TIP31 40 V

: TIP31A 60 V
: TIP31B 80 V
: TIP31C 100 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current (DC) 3 A

ICP Collector Current (Pulse) 5 A

IB Base Current 1 A

PC Collector Dissipation (TC=25°C) 40 W

Collector Dissipation (Ta=25°C) 2 W

TJ Junction Temperature 150 °C

TSTG Storage Temperature - 65 ~ 150 °C

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

TIP31/TIP31A/TIP31B/TIP31C Rev. A 1
 TIP31/TIP31A/TIP31B/TIP31C — NPN Epitaxial Silicon Transistor
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units

VCEO(sus) * Collector-Emitter Sustaining Voltage

: TIP31 IC = 30mA, IB = 0 40 V
: TIP31A 60 V
: TIP31B 80 V
: TIP31C 100 V

ICEO Collector Cut-off Current

: TIP31/31A VCE = 30V, IB = 0 0.3 mA
: TIP31B/31C VCE = 60V, IB = 0 0.3 mA

ICES Collector Cut-off Current

: TIP31 VCE = 40V, VEB = 0 200 μA
: TIP31A VCE = 60V, VEB = 0 200 μA
: TIP31B VCE = 80V, VEB = 0 200 μA
: TIP31C VCE = 100V, VEB = 0 200 μA

IEBO Emitter Cut-off Current VEB = 5V, IC = 0 1 mA

hFE * DC Current Gain VCE = 4V, IC = 1A 25

VCE = 4V, IC = 3A 10 50

VCE(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 375mA 1.2 V

VBE(sat) * Base-Emitter Saturation Voltage VCE = 4V, IC = 3A 1.8 V

fT Current Gain Bandwidth Product VCE = 10V, IC = 500mA, f = 1MHz 3.0 MHz
* Pulse Test: PW≤300ms, Duty Cycle≤2%

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

TIP31/TIP31A/TIP31B/TIP31C Rev. A 2
 TIP31/TIP31A/TIP31B/TIP31C — NPN Epitaxial Silicon Transistor
Typical Characteristics

VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

1000 10000
VCE = 4V IC/IB = 10
hFE, DC CURRENT GAIN

100 1000 VBE(sat)

10 100

VCE(sat)

1 10
1 10 100 1000 10000 1 10 100 1000 10000

IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT

Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

10 50

IC(MAX) (PULSE) 45

100μs 40
IC[A], COLLECTOR CURRENT

PC[W], POWER DISSIPATION

IC(MAX) (DC)
5m

35
1m
s

30

1 25

20

15

TIP31 VCEO MAX. 10

TIP31A VCEO MAX.
TIP31B VCEO MAX. 5
TIP31C VCEO MAX.
0.1 0
10 100 0 25 50 75 100 125 150 175 200

o
VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE

Figure 3. Safe Operating Area Figure 4. Power Derating

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

TIP31/TIP31A/TIP31B/TIP31C Rev. A 3
 TIP31/TIP31A/TIP31B/TIP31C — NPN Epitaxial Silicon Transistor
Mechanical Dimensions

TO220

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

TIP31/TIP31A/TIP31B/TIP31C Rev. A 4
 TIP31/TIP31A/TIP31B/TIP31C NPN Epitaxial Silicon Transistor

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

TIP31/TIP31A/TIP31B/TIP31C Rev. A 5