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Optical properties and band alignments in ZnTe nanoparticles/MoS2 layer hetero-interface

using SE and KPFM studies

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Page 1 of 22 AUTHOR SUBMITTED MANUSCRIPT - NANO-114428.R2

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Optical properties and band alignments in ZnTe nanoparticles/MoS2 layer hetero-
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6 interface using SE and KPFM studies
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8 Intu Sharma and B. R. Mehta

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Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New
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13 Delhi, 110016, India

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15 Abstract
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18 Integration of a layered two-dimensional (2D) material with non-2D material provides a
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20 platform where one can modulate and achieve properties desired for various next-
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22 generation electronic and opto-electronic applications. Here, we investigate ZnTe
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25 nanoparticles/MoS2 hetero-interfaces with thickness of MoS2 varying from a few to
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27 multilayers. High resolution transmission electron microscopy has been used to observe
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crystalline behaviour of ZnTe nanoparticles while numbers of layers of MoS2 are
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32 investigated using Raman measurements. Spectroscopic ellipsometry (SE) analysis based
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34 on five layer fitting model is used to analyse optical behaviour of heterojunction where
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37 excitonic features corresponding to MoS2 layers and absorption features due to ZnTe
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39 nanoparticles are observed. From Kelvin probe force microscopy (KPFM) measurements,
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41 surface potential (SP) of ZnTe nanoparticles/MoS2 is found to be different in comparison
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44 to surface potential of ZnTe nanoparticles and MoS2 which is an indicative of charge
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46 transfer at ZnTe nanoparticles/MoS2 hetero-interface. Various parameters obtained using
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48 SE and KPFM measurements are used to propose energy band alignments at ZnTe
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51 nanoparticles/MoS2 heterointerface. In addition, an interface photovoltage of 193 mV is
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53 also obtained by carrying out KPFM measurements under illuminating conditions.

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Introduction
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6 Lack of natural energy band gap in graphene has pushed the 2D materials based research
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8 towards transition metal dichalcogenides (TMDs) [1, 2]. These TMDs are extremely

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flexible and show moderate carrier mobility with layer dependent electronic and optical
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13 properties, thus providing rich physics for tailoring the performance of optoelectronics

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15 devices. Band gaps of TMDs can be modulated in the visible region (1.2-2.1 eV) which
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18 favors their applications in photo detectors [3-5], light emitting diodes [6-8] and
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20 photovoltaic devices [9-12]. In addition, scaling down of modern electronic and
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22 optoelectronic devices can be achieved by fabricating field effect transistor [13, 14] and p-
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25 n junction diode [3, 15-17] from atomically thick TMDs. Due to the difficulties in
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27 synthesizing large area 2D TMDs and their heterojunctions, and low light absorption in
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atomic thin 2D materials, integration of 2D TMDs with different dimensionality i. e. nD
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32 (where n=0…3) materials is of growing scientific and technological interest. MoS2, a
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34 member of TMDs family shows an indirect band gap (Eg) of 1.2 eV in bulk form while its
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37 monolayer transforms to a direct band gap (Eg=1.8 eV) material [18]. Noticeable attempts
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39 of fabricating MoS2 heterostructures with 3D materials such as MoS2/GaN [19, 20],
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41 MoS2/SiC [21, 22], MoS2/Si [9, 23], MoS2/ZnS [24] and 2D materials such as MoS2/WS2
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44 [3, 10, 17, 25, 26], MoS2/WSe2 [27, 28] have been made. A few efforts to integrate MoS2
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46 with 1D materials (nanorods) such as MoS2/ZnO [29] and MoS2/CdS [30] have also been
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48 made. However, hybrid junctions of MoS2 with NPs or QDs are relatively unexplored in
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51 the existing literature. There are a few studies on the heterojunctions of MoS2 with 0D
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53 materials. In one of the report, MoS2 nano-flower decorated with ZnO nanoparticles are
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observed to show enhanced photocatalytic and field emission properties [31]. In an
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58 another work, photo detector based on heterointerfaces of 2D MoS2 with 0D PbS QDs are
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synthesised and found to show very high responsivity as compared to photo detectors
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6 based on individual PbS QDs and 2D MoS2 layers [32].
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8 In this regard, hetero-interfaces of MoS2 with a direct band gap semiconductor such as

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ZnTe are of great interest owing to enhanced light absorption which may lead to a better
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13 performance of optoelectronic devices. Zinc telluride (ZnTe) is an II-VI p-type

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15 semiconductor which shows a direct band gap (Eg) of 2.24 eV and is successfully used in
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18 photo detectors [33], solar cells [34, 35], light emitting diode [36] and display devices
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20 [37]. Due to its suitable band gap and its most negative conduction band (CB) edge
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22 position at ~ -1.63 eV with respect to standard hydrogen electrode, ZnTe is very attractive
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25 photocathode material for photoelctrochemical cell [38]. Recently, ZnTe film modified
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27 with MoS2 and carbon are found to show enhanced photoelectrochemical (PEC) activity
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with good stability in the electrolyte [39]. MoS2 shows layer dependent electron affinity
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32 and band gap values, hence CB offset, valence band (VB) offset and built-in field at the
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34 hetero interface can be modulated with the thickness of MoS2 layers [24].
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37 In van der Waals heterostructures based on TMDs, one needs to understand different
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39 electronic and optical properties of a heterostructure in comparison to two individual
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41 layers. Electronic structures and optical constants obtained by spectroscopic ellipsometry
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44 (SE) technique can be used to tune the light matter interactions for novel photonic devices.
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46 Generally Kelvin probe force microscopy (KPFM) is used to study the charge transfer
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48 processes, which result in band bending and formation of built-in field at the
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51 heterojunction [40] . KPFM combined with illumination source can be used to study
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53 photo-generated charge separation at the junction due to the existence of built-in field as
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explained in detail in one of our recent works [24]. It is worth mentioning here that contact
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58 electrification during tapping mode topography measurements, prior to the surface
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60 potential (SP) measurements using KPFM may lead to the error in the measured surface

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potential value, however this can be eliminated as proposed by Li et al.[41]. KPFM
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6 technique is also proved to be of potential use in the field of nanoscale triboelectrification.
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8 Zhou et al.[42, 43] have used combination of contact mode atomic and Kelvin probe force

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microscopy for quantitative characterization of the triboelectrification process and
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13 manipulation of contact electrification by an applied electric field at the nanoscale.

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15 In the present study, investigation of ZnTe nano crystalline films/MoS2 layers hetero
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18 interface with MoS2 thicknesses ranging from a few to multilayers have been carried out.
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20 SE and KPFM studies are used to propose possible band alignments, band bending, built-
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22 in field and photovoltage generated at the interface under illumination.
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25 Experimental details
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Prior to deposition, the sputtering chamber is evacuated down to a pressure of 3×10-6 Torr
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followed by the introduction of Ar gas. Next, Mo is sputtered from Mo target (99.95%
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32 purity) on SiO2/Si substrates for 20 s and 3 min at 1.8×10-3 Torr with a gas flow rate of 90
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34 SCCM at RF power of 50 W. Following this the sulfurization of Mo is carried out in a 2
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37 zone (high and low temperature) tube furnace. After purging quartz tube with Ar gas for
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39 15 min, temperature of zone 1 and 2 are raised to 800°C (ramping rate ~650°C/hour) and
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41 150°C (ramping rate~50°C/hour), respectively. Both the zones are maintained at desired
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44 temperatures for 10 min so that Mo can react with S to form MoS2. Reaction by-products
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46 are taken away by the carrier gas and passed through the KOH solution placed at the exit
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48 of the furnace. After MoS2 synthesis, ZnTe is sputtered on partially masked MoS2 film,
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51 SiO2/Si and carbon coated Cu grid for 10 s. Micro-structural properties of the prepared
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53 ZnTe nanocrystalline film are investigated using high resolution transmission electron
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microscopy (HRTEM) technique. Raman characterizations are performed with Ar ion
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58 laser (λ=514 nm) in the range 100 to 450 cm-1 whereas optical studies have been done
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60 using variable angle spectroscopic ellipsometry (VASE) technique in the wavelength

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range of 200-1000 nm. The information of films refractive index (n), extinction coefficient
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6 (k), real (ε1) and imaginary (ε2) part of dielectric constant, thickness and roughness is
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8 extracted out by modeling the layers structure and fitting the SE data. The ellipsometric

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data for the ZnTe and MoS2 layers has been modeled assuming a four layer model
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13 consisting of Si substrate (0.6 mm), SiO2 (285 nm), intermix layer between Si and SiO2 (5

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15 nm) and weakly absorbing Cauchy layer (~6 nm for ZnTe, ~81 for multilayers MoS2 and 3
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18 nm for few layers MoS2) up to the direct band-gap of the materials (2.34 for ZnTe , 1.78
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20 for multi layers MoS2 and 1.42 eV for few layer MoS2). In ellipsometric data analysis,
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22 thickness of layer is extracted out by fitting the ellipsometric data with the Cauchy layer in
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25 the optically transparent region. Afterwards, by keeping thickness as well as Cauchy
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27 layers parameters (An, Bn and Cn) as fixed, optical constants (n, k) are obtained in the
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entire spectral range by carrying out point by point fitting. These optical constants are
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32 saved in a file and Cauchy layer is replaced with General oscillator (GenOsc) layer. The
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34 saved optical constants are used as reference and general oscillators are fitted to match
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37 with the saved ε2 curve first and ε1 second. After a good match of reference and GenOsc
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39 model generated optical constants, GenOsc layer model is fitted to experimentally
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41 determined Ψ(λ) and ∆(λ). For ZnTe/MoS2 heterojunctions, fits are carried out by taking
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44 optical constants of ZnTe and MoS2 films modeled individually.
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46 To record the KPFM images, Bruker’s Dimension ICON AFM in non-contact mode is
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48 employed. A Pt-Ir tip (SCM-PIT) at the end of the Si cantilever with a radius of curvature
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51 30 nm operated at a resonance frequency of ∼65 kHz is used in the present study. First
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53 topography is recorded in tapping mode and then tip is lifted to a typical lift height of 30
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nm. An AC voltage plus DC voltage is applied to the AFM tip where VAC generates
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surface and tip. In KPFM, the value of VDC at which F=0 is VCPD, which is measured
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6 parameter. Detailed information on KPFM technique can be found here [40, 44, 45]. Scan
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8 rates of ~0.6 Hz are used in obtaining dual AFM topography and KPFM bias images, and

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the free oscillation amplitude of the cantilever used in these experiments is ~2V with a
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13 VAC=0.6V. WSxM [46] software is used to analyze the KPFM data.

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15 Results and discussion
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18 HRTEM and Raman studies
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20 TEM, HRTEM and selected area electron diffraction (SAED) patterns for ZnTe nano-
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22 crystallite layers are shown in Figures 1(a), (b) and (c), respectively. Auto correlation
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25 function of GATAN software is used to find the interplaner ‘d’ spacing and identifying the
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27 crystal planes. Fringes corresponding to (111) planes of cubic zinc blende phase of ZnTe
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are clearly visible in HRTEM images. Polycrystalline nature of ZnTe nano-crystalline
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32 films is also revealed from diffuse diffraction rings in the SAED pattern. Figure 1(d)
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34 shows typical micro Raman spectra for ZnTe nanocrystallites, few layers MoS2, multi
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37 layers MoS2 and their heterojunctions with ZnTe nanocrystallites. ZnTe film shows cubic
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39 crystal structure therefore first order Raman spectra consists of longitudinal optical (LO)
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41 mode and double degenerate transverse optical (TO) mode. ZnTe nanocrystalline film in
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44 the present study shows peaks at 129 and 144 cm-1 while no peaks corresponding to LO
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46 (208.3 cm-1) and TO (177.5 cm-1) modes of ZnTe are observed. In an earlier study [47],
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48 modes below 160 cm-1 are attributed to combination of transverse acoustic phonons while
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51 in another study these are attributed to Te due to laser induced damage of the ZnTe surface
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53 during Raman measurements [48]. Absence of LO and TO modes of ZnTe in our study
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may be due to less crystallinity and thickness of ZnTe nanocrystalline film [49].
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vibrations of Mo and S atoms whereas A1g mode represents out of plane vibrations of only
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6 S atoms. In MoS2, positions of these two modes evolve with the thickness of MoS2 layer.
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shifted. Thus peak position difference (Δ) of these two modes is an indicator of the
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13 thickness of the material. It has been reported earlier that mono, bi, tri, four and bulk MoS2

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15 show Δ as 18, 21, 23, 24 and 26 cm-1, respectively [50]. In the present study, for one MoS2
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18 sample, E12g and A1g modes are observed at 383.7 and 405.7 cm-1, respectively which
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22 sample, these are observed at 381.3 and 407 cm-1 respectively, hence Δ value of 25.7 cm-1
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25 represents multilayers nature of MoS2. Now onwards, MoS2 few and multilayers samples
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27 will be referred as MS(F) and MS(M), respectively and their junctions with ZnTe as
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ZT/MS(F) and ZT/MS(M). Raman spectra of ZnTe/MoS2 heterojunctions show typical
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32 vibrations of ZnTe as well as MoS2 indicating the formation of heterojunctions between
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34 two. ZT/MS(F) heterostructure shows Raman peaks at 128.2, 142.6, 383.4, 406.4 cm-1
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37 while ZT/MS(M) shows peaks at 128.2, 142.7, 381.3, 407 cm-1, respectively. Therefore Δ
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39 i. e. peak position difference of E12g and A1g modes in ZT/MS(F) sample is 23 cm-1 while
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41 Δ in case of ZT/MS(M) samples is 25.8 cm-1.
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36 nanocrystalline film, respectively. (d) Raman spectra for ZnTe, MS(F), MS(M),
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39 ZT/MS(F) and ZT/MS(M) samples.
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41 Dielectric constants and band gaps
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43 As already discussed, optical properties of ZnTe, MS(M), MS(F) and ZnTe/MoS2 hetero-
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46 junctions are investigated using VASE technique. The experimental and fitted data for
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48 Ψ(λ)(psi) values at angle of incidence 55°, 65° and 75° for individual ZnTe, MS(F) and
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50 MS(M) layers deposited on SiO2/Si substrate are shown in Figures 2(a), (b) and (c),
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53 respectively. Figures 2(d) and (e) show similar data’s and fits for ZT/MS(M) and
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55 ZT/MS(F) heterojunctions, respectively. Excitonic features are clearly visible in the Ψ
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plots of MS(M) layer and its heterostructure with ZnTe.
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26 Figure 2: (a), (b) and (c) are Ψ plots for ZnTe nanocrystalline film, MS(M) and
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28 MS(F) layers, respectively. (d) and (e) are similar plots for ZT/MS(M) and ZT/MS(F)
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31 heterojunctions, respectively.
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33 Figures 3(a) and (b) show the imaginary parts of dielectric constants (ε2(E)) for ZnTe and
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MoS2 layers of ZT/MS(M) and ZT/MS(F) heterojunctions, respectively. ZnTe layer shows
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38 peaks at ~2.5, 3.5, 4.1, 4.8 and 5.8 eV which are attributed to E0, E0+Δ0, E1, E1+Δ1 and E2
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40 transitions of ZnTe, respectively. E0 and E0+Δ0 are observed at the Γ point of Brillion zone
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43 (BZ), E1, E1+Δ1 along L point and E2 along X direction [51]. Imaginary part of dielectric
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47 in energy upto 1.74 eV where a sharp increase in ε2 value is observed. It shows maxima at
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50 energy value of 1.83 eV which corresponds to the direct band gap (Eo) transition of MoS2
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52 at the Κ point of the BZ; this transition is associated with A excitons of the material. Peak
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54 at 1.98 eV corresponds to (Eo+Δo) which is attributed to the transition from spin orbit
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57 splitted VB to CB at Κ’ point of BZ due to the B exciton of MoS2. Δ0 in our case is 150
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59 mV which is smaller in comparison to the reported value 190 mV for bulk MoS2 [52].
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Next broad peak in ε2(E) spectra at 2.79 eV is due to combined effect of C and D excitons

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which are attributed to the transition from VB to CB at the part of BZ between Λ and Γ
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6 points and transition from spin orbit splitted VB to the CB, respectively. Next transition is
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in the BZ. In ZT/MS(F) sample (see Figure 3(b)), MS(F) layer shows gradual increase
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15 4.2 eV. The peak at 2.04 eV is combined effect of A and B excitons while peak at 2.92 eV
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18 is attributed to C and D excitons. The peak at 4.2 eV is due to combination of several
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22 and MS(F) layer of ZT/MS samples in our case is consistent with the findings of Li et. al
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25 [52] as well Yu et. al [53]. It is well known that ε2(E) in 2D TMDs is given by
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AoJcvU[(0)] 2 where Ao a constant independent of layer number, Jcv joint density of state
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and U[(0)] 2 is excitonic effect [53]. The joint density of states increases while excitonic
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32 effect decreases with increase in layer number, so initially dielectric constant decreases
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34 upto 5 layers and increases on further increasing MoS2 thickness due to the combined
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37 effect of both parameters. The values of dielectric constants of MoS2 layers in MS(M) and
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39 MS(F) samples also suggest their multi and few layers nature.
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41 The extinction coefficients obtained from the fitted data is used to calculate the optical
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44 absorption coefficients. For this purpose, the relation α=4πk/λ is used. Figures 3(c) and
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46 (d) show variation of α with energy for individual ZnTe and MoS2 layers of ZT/MS(M)
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48 and ZT/MS(F) heterojunction samples, respectively. Variation of α with energy suggest
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51 that MS(M) and MS(F) layers show non-zero values of α in the entire energy range
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53 suggesting indirect nature of the material. For ZnTe, α is zero upto direct band gap of the
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material. The absorption coefficient in the band edge region is related to excitation energy
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58 by the relation: (αhν)1/n=A (hν-Eg) where h and ν are Planck’s constant and frequency of
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for direct and indirect allowed transitions, respectively. Using n=1/2 for ZnTe and n=2 for
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6 MoS2, band gaps of MoS2 and ZnTe layers are calculated by employing Tauc’s plot
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ZT/MS(F) samples are shown in Figures 3(e) and (f), respectively, where arrows indicate
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13 right exponent belong to ZnTe and left to MoS2 layer. Band gap values of 1.10, 2.34 and

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15 1.42, 2.34 eV are obtained for the individual MoS2 and ZnTe layers of ZT/MS(M) and
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18 ZT/MS(F) samples, respectively.
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40 Figure 3: (a) and (b) are imaginary parts of dielectric constants for ZnTe and MoS 2
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43 layers in ZT/MS(M) and ZT/MS(F) heterojunctions, respectively. (c) and (d) are
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45 absorption coefficients of ZnTe and MoS2 layers of ZT/MS(M) and ZT/MS(F)

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heterojunctions, respectively. (e) and (f) are Tauc’s plots for ZnTe and MoS 2 layers
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50 of ZT/MS(M) and ZT/MS(F) heterojunctions, respectively.
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55 Surface potential analysis for ZT/MS(M)
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57 Surface potential images for ZT/MS(M) sample under dark and white light conditions
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prior to measurements on the sample) have been carried out. Topography and surface
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6 potential images under white light condition for MoS2 are shown in Figures 4(a) and (b),
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Figures 4(c)-(d) and (e)-(f), respectively. Clear change in the topography and SP images of
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15 followed by MoS2 layers while diffuse grain boundaries are observed in ZnTe NPs film.
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Figure 4: (a) and (b) are topography and surface potential images under white light
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48 exposure for MS(M) layers, respectively. (c)-(d) and (e)-(f) are similar images for
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50 ZnTe nanocrystalline film and ZT/MS(M) heterojunction, respectively.
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53 SPs profiles under white light condition for MS(M), ZnTe layers and ZT/MS(M)
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55 heterostructure are shown in Figure 5. SP profiles are obtained from SP images by pixel-
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24 Figure 5: Surface potential profiles for MoS2 layers, ZnTe and ZnTe/MoS2
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heterojunction under white light conditions.
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For KPFM measurements in ZT/MS(M) heterostructure, MoS2 layer is grounded through
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31 Ti/Au contact and tip is scanned over ZnTe layer. As thickness of ZnTe layer is only~6
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nm, so the SP corresponds to charge transfer between tip and ZnTe layer and influence of
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36 charge transfer at ZT/MS(M) heterojunction. Average values of SPs for ZnTe/SiO2,
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38 MS(M)/SiO2 and ZT/MS(M)/SiO2 heterostructure under dark are found to be 18, -617 and
39
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41 218 mV, respectively. In the KPFM technique, VCPD and known work function of tip (Φtip)
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43 are used to calculate the work function of the sample as Φsample = Φtip-VCPD. Work function
44
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45 values of 5.12, 4.48 and 4.28 eV are obtained for MS(M), ZnTe and ZT/MS(M) hetero-
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47
48 junction, respectively. The work function of semiconductor is also given by relation
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50 Φsample = χs+(Ec-Ef), where χs is the electron affinity of the semiconductor and (Ec-Ef) is
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the position of Fermi level with respect to the conduction band. Combining above two
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55 equations, work function of the tip is given as Φtip= VCPD+χs+(Ec-Ef) [17, 54]. Values of
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57 electron affinities for ZnTe nanocrystalline film and multilayers MoS2 are reported to be
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2.7 eV [55] and 4.3 eV [56], respectively. Using relation Φtip= VCPD+χs+(Ec-Ef), values of

(Ec-Ef) are found to be 1.78 and 0.82 eV for ZnTe (Eg=2.3 eV) and multilayers MoS2

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(Eg=1.1 eV), respectively. Thus Fermi levels lie below the middle of the band gaps in
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6 ZnTe nanocrystalline film as well as multilayers MoS2 as shown in Figure 6 (a). Positions
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8 of Fermi levels with respect to conduction bands suggest p-type nature of both ZnTe

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nanocrystalline film and multilayers MoS2. Although multilayers MoS2 is n-type material,
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13 p-type behaviour may be due to either holes doping from the SiO2/Si substrate or it may

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15 also be due to adsorbed oxygen and water molecules which removes electrons from MoS2
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18 film [57, 58]. Using electron affinities (χs) from the literature, band gaps (Eg) from
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20 spectroscopic ellipsometry and Fermi levels (Ef) positions from KPFM measurements,
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22 band alignments as shown in Figure 6(a) are proposed for ZnTe and MoS2. MoS2/SiO2 and
23
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25 ZnTe/SiO2 samples on illumination with white light show SPs of 35 and -615 mV,
26 an
27 respectively. There is significant change in SP of ZnTe on illumination as compared to
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MoS2 layer. This is due to the fact that AFM laser light (which is a semiconductor laser
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32 diode with power of 1.0 mW at 670 nm) falling partially on the samples during
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34 measurements is capable of exciting MoS2 (Eg=1.2 eV) layer. However, laser light is
35
36
37 incapable of exciting ZnTe layer, therefore ZnTe layer under white light illumination
38
39 shows SP of 35 mV due to generation of excess carriers. Therefore, dark condition
40
41 basically corresponds to the partial illumination by AFM red laser light. Therefore, we
42
43
44 have carried out all ZnTe/MoS2 junction analysis under white light illumination.
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46 When ZnTe and MoS2 are brought in the contact to form junction, there is transfer of
47
48 electrons from ZnTe (lower work function, i. e. 4.5 eV) to MoS2 (higher work function i.
49
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51 e. 5.1) to align the Fermi levels at equilibrium. Due to this charge transfer, there is down
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53 ward band bending on ZnTe side while upward band bending on MoS2 side and a
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depletion region form, positive charges on ZnTe side and negative charges on MoS2 side,
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58 as shown in Figure 6(b). Alignment of the Fermi levels at equilibrium and existence of
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60 built-in field are manifested in the downward movement of vacuum level on ZnTe side.

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Theoretically, there should exist a built-in field of about 0.6 V i.e. 5.1-4.5 eV (Fermi
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6 levels difference of two materials) at the interface. However this situation exists under
7
8 dark condition only and is not measured in our experiment due to AFM laser light.

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When ZnTe/MoS2 sample is illuminated with the white light, there is absorption of
12
13 photons leading to generation of electron-hole pairs and subsequently separation of

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15 electrons and holes by the built in field existing at the interface. Electrons reside on ZnTe
16
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18 side while holes move to MoS2 side, as shown in Figure 6(c). Due to excess carriers,
19
20 system is in non-equilibrium state and Fermi level splits (quasi Fermi levels forms).The
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22 built-in field at the interface decreases resulting in an upward movement of vacuum level
23
24
25 on ZnTe side as shown in Figure 6(c). Therefore Fermi level shifts upwards on ZnTe side.
26 an
27 This decrease in Fermi level position of ZnTe is manifested in the shift of surface potential
28
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towards more positive value in ZnTe/MoS2 as compared to ZnTe/SiO2. Surface potential
30
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32 of ZnTe in ZnTe/SiO2 sample under dark is 18 mV whereas surface potential in
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34 ZnTe/MoS2 junction under illumination is 221 mV. Therefore we attributed this change of
35
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37 193 mV in the SP values in the two cases to the interface photovoltage existing at the
38
39 ZnTe/MoS2 interface under white light illumination as shown in Figure 6(c).
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26 an
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30 Figure 6: (a) Band alignments for MS(M) and ZnTe when both are isolated. (b) and
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32 (c) are band alignments on contact formation under dark and under white light
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35 illumination conditions, respectively.
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Conclusions
40
41
42 In summary, ZnTe nanoparticles/MoS2 heterojunctions have been fabricated by radio
43
44 frequency magnetron sputtering of ZnTe on partially masked MoS2 layers. These MoS2
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layers in the junctions are synthesized by vapor phase sulfurization of optimized thickness
48
49 of sputtered Mo films. Optical measurements carried out using spectroscopic ellipsometry
50
51 revealed that ZnTe/MoS2 heterojunctions show absorption corresponding to both ZnTe
52
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54 NPs and MoS2 layers with layer dependent energy band gaps of MoS2 and higher band gap
55
56 of ZnTe NPs in comparison to ZnTe thin films due to quantum confinements. The energy
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band gap and work function values obtained from optical and KPFM studies, respectively
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are used to construct possible energy band alignments at ZnTe/MoS2 hetero-interface and

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exploring charge transfer taking place between ZnTe NPs and MoS2. KPFM
4
5
6 measurements performed under illuminating conditions revealed the generation and
7
8 separation of charge carriers by junction field with interface photo-voltage close to 193

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mV. Fabrication, optical and charge transfer investigations of ZnTe/MoS2 heterojunctions
12
13 carried out in the present work may be beneficial in utilizing MoS2 layer based

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15 heterostructures in mainstream device applications.
16
17
18 Acknowledgements
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20 Intu Sharma acknowledges Council of Scientific and Industrial Research (CSIR) India and
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22 IIT Delhi for providing Senior Research Fellowship. Bodh Raj Mehta acknowledges the
23
24
25 support of the Schlumberger Chair Professorship. We also acknowledge NRF facility at
26 an
27 IIT Delhi.
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30
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