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Abstract
A philosophy for electrochemical impedance spectroscopy is presented which integrates experimental observation, model development, and error
analysis. This approach is differentiated from the usual sequential model development for given impedance spectra by its emphasis on obtaining
supporting observations to guide model selection, use of error analysis to guide regression strategies and experimental design, and use of models to
guide selection of new experiments. These concepts are illustrated with two examples taken from the literature. This work illustrates that selection
of models, even those based on physical principles, requires both error analysis and additional experimental verification.
© 2007 Elsevier Ltd. All rights reserved.
0013-4686/$ – see front matter © 2007 Elsevier Ltd. All rights reserved.
doi:10.1016/j.electacta.2007.10.075
M.E. Orazem, B. Tribollet / Electrochimica Acta 53 (2008) 7360–7366 7361
imental error structure and because they do not emphasize the The impedance measurements should also be conducted in
critical role of supporting experimental measurements. Orazem concert with error analysis with emphasis on both stochas-
et al. proposed a flow diagram (Figure 6 in reference [4]) consist- tic and systematic bias errors. The bias errors can be defined
ing of three elements: experiment, measurement model, and pro- to be those that result in data that are inconsistent with the
cess model. The measurement model was intended to assess the Kramers–Kronig relations. An empirical error analysis can
stochastic and bias error structure of the data; thus, their diagram be undertaken using the measurement model approach sug-
accounts for the independent assessment of experimental error gested by Agarwal et al. [5–7] and Orazem [8]. It should be
structure. Their diagram does not, however, account for sup- noted, however, that this approach is not definitive because
porting non-impedance measurements, and the use of regression Kramers–Kronig-consistent artifacts can be caused by electrical
analysis, while implied, is not shown explicitly. The object of leads and the electronics. Use of dummy cells can help identify
this work is to formulate a comprehensive approach which can be artifacts that are consistent with the Kramers–Kronig rela-
applied to measurement and interpretation of impedance spectra. tions. As an alternative approach for identification of stochastic
part of the error structure, Dygas and Breiter have shown
2. Integration of measurements, error analysis, and that impedance instrumentation could, in principle, provide
model standard deviations for the impedance measurements at each
frequency [9].
A refined philosophical approach toward the use of The feedback loop shown in Fig. 1 between EIS Experi-
impedance spectroscopy is outlined in Fig. 1 where the trian- ment and Error Analysis indicates that the error structure is
gle evokes the concept of an operational amplifier for which obtained from the measured data and that knowledge of the
the potential of input channels must be equal. Sequential steps error structure can guide improvements to the experimental
are taken until the model provides a statistically adequate rep- design. The magnitude of perturbation, for example, should be
resentation of the data to within the independently obtained selected to minimize stochastic errors while avoiding induc-
stochastic error structure. The different aspects which comprise ing a nonlinear response. The frequency range should be
the philosophy are presented in this section. selected to sample the system time constants, while avoiding
bias errors associated with non-stationary phenomena. In short,
2.1. Impedance measurement are integrated with the experimental parameters should be selected so as to min-
experimental error analysis imize the stochastic error structure while, at the same time,
allowing for the maximum frequency range that is free of bias
All impedance measurements should begin with measure- errors.
ment of a steady-state polarization curve. The steady-state
polarization curve is used to guide selection of an appropri- 2.2. Process model is developed in concert with other
ate perturbation amplitude and can provide initial hypotheses observations
for model development. The impedance measurements can
then make be performed at selected points on the polarization The model identified in Fig. 1 represents a process model
curve to explore the potential dependence of reaction rate con- intended to account for the hypothesized physical and chemi-
stants. Impedance measurements can be performed as well as cal character of the system under study. From the perspective
a function of other state variables such as temperature, rotation embodied in Fig. 1, the objective of the model is not to
speed, reactant concentration. Impedance scans made at differ- provide a good fit with the smallest number of parameters.
ent points of time can be used to explore temporal changes in The objective is rather to use the model to gain physical
system parameters. Some examples include growth of oxide or understanding of the system. The model should be able to
corrosion-product. account for, or at least be consistent with, all experimental
observations. The supporting measurements therefore provide
a means for model identification. The feedback loop shown in
Fig. 1 between Model and Other Observations is intended to
illustrate that the supporting measurements guide model devel-
opment and the proposed model can suggest experiments needed
to validate model hypotheses. The supporting experiments
can include both electrochemical and non-electrochemical
measurements.
Numerous scanning electrochemical methods such as scan-
ning reference electrodes, scanning tunneling microscopy, and
scanning electrochemical microscopy can be used to explore
surface heterogeneity. Scanning vibrating electrodes and probes
can be used to measure local current distributions. Local
Fig. 1. Schematic flowchart showing the relationship between impedance mea- electrochemical impedance spectroscopy provides a means of
surements, error analysis, supporting observations, model development, and exploring the distribution of surface reactivity. Measurements
weighted regression analysis. can be performed across the electrode at a single frequency to
7362 M.E. Orazem, B. Tribollet / Electrochimica Acta 53 (2008) 7360–7366
3. Examples
The systems described below illustrate the approach outlined Fig. 2. Impedance data as a function of frequency for an n-GaAs/Ti Schottky
in Fig. 1. diode with temperature as a parameter: (a) the real part of the impedance; and
(b) the imaginary part of the impedance. Data taken from Orazem et al. [11] and
Jansen et al. [12].
3.1. Deep-level states in GaAs diodes
a normalized frequency defined by
Orazem et al. [11] and Jansen et al. [12] described the
impedance response for an n-type GaAs Schottky diode with f E
temperature as a parameter. The system consisted of an n-GaAs f ∗ = ◦ exp (1)
f kT
single crystal with a Ti Schottky contact at one end and a Au,
Ge, Ni Schottky contact at the eutectic composition at the other where E = 0.827 eV, and the characteristic frequency f ◦ was
end. This material has been well characterized in the litera- assigned a value of 2.964 × 1014 Hz such that the imaginary part
ture and, in particular, has a well known EL2 deep-level state of the normalized impedance values reached a peak value near
that lies 0.83–0.85 eV below the conduction band edge [13]. f ∗ = 1. The data collected at different temperatures are reduced
Experimental details are provided elsewhere [11,12].
The experimental data are presented in Fig. 2 (a) and (b)
for the real and imaginary parts of the impedance, respectively,
for temperatures ranging from 320 to 400 K. The logarithmic
scale used in Fig. 2 emphasizes the scatter seen in the imag-
inary impedance at low frequencies. The impedance response
is seen to be a strong function of temperature. The impedance-
plane plots shown in Fig. 3 for data collected at 320 and 340 K
approach the classic semicircle associated with a single relax-
ation process.
Jansen and Orazem showed that the impedance data could be
superposed as given in Fig. 4[12]. The impedance data collected Fig. 3. Impedance data in impedance-plane format for an n-GaAs/Ti Schottky
at different temperatures were normalized by the maximum diode with temperature as a parameter. Data taken from Orazem et al. [11] and
mean value of the real part of the impedance and plotted against Jansen et al. [12]
M.E. Orazem, B. Tribollet / Electrochimica Acta 53 (2008) 7360–7366 7363
Fig. 4. Impedance data from Fig. 2 collected for an n-GaAs/Ti Schottky diode Fig. 5. Impedance data from Fig. 2 collected for an n-GaAs/Ti Schottky diode
as a function of frequency f ∗ = (f/f ◦ ) exp(E/kT ): (a) the real part of the as a function of frequency f ∗ = (f/f ◦ ) exp(E/kT ): (a) the real part of the
impedance; and (b) the imaginary part of the impedance. Data taken from Jansen impedance; and (b) the imaginary part of the impedance.
et al. [12]
4. Discussion
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5. Conclusions Development of physico-chemical models for electrochemical impedance
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