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Irf540nlpbf Irf540nspbf
Irf540nlpbf Irf540nspbf
IRF540NSPbF
l Advanced Process Technology IRF540NLPbF
l Ultra Low On-Resistance HEXFET® Power MOSFET
l Dynamic dv/dt Rating
D
l 175°C Operating Temperature
VDSS = 100V
l Fast Switching
l Fully Avalanche Rated
RDS(on) = 44mΩ
l Lead-Free
G
Description
Advanced HEXFET ® Power MOSFETs from ID = 33A
International Rectifier utilize advanced processing S
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up D2 Pak TO-262
to 2.0W in a typical surface mount application. IRF540NSPbF IRF540NLPbF
The through-hole version (IRF540NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 33
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 23 A
IDM Pulsed Drain Current 110
PD @TC = 25°C Power Dissipation 130 W
Linear Derating Factor 0.87 W/°C
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Current 16 A
EAR Repetitive Avalanche Energy 13 mJ
dv/dt Peak Diode Recovery dv/dt 7.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.15
°C/W
RθJA Junction-to-Ambient (PCB mount)** ––– 40
www.irf.com 1
3/18/04
IRF540NS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, I D = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 44 mΩ VGS = 10V, ID = 16A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 21 ––– ––– S VDS = 50V, ID = 16A
––– ––– 25 VDS = 100V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 71 ID = 16A
Qgs Gate-to-Source Charge ––– ––– 14 nC VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 21 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 11 ––– VDD = 50V
tr Rise Time ––– 35 ––– ID = 16A
ns
td(off) Turn-Off Delay Time ––– 39 ––– RG = 5.1Ω
tf Fall Time ––– 35 ––– VGS = 10V, See Fig. 10
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH
from package G
––– ––– 33
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 16A, VGS = 0V
trr Reverse Recovery Time ––– 115 170 ns TJ = 25°C, IF = 16A
Qrr Reverse Recovery Charge ––– 505 760 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
This is a typical value at device destruction and represents
max. junction temperature. (See fig. 11) operation outside rated limits.
Starting TJ = 25°C, L =1.5mH This is a calculated value limited to TJ = 175°C .
RG = 25Ω, IAS = 16A. (See Figure 12) Uses IRF540N data and test conditions.
ISD ≤ 16A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS, **When mounted on 1" square PCB (FR-4 or G-10 Material). For
TJ ≤ 175°C
recommended footprint and soldering techniques refer to application
Pulse width ≤ 400µs; duty cycle ≤ 2%.
note #AN-994
2 www.irf.com
IRF540NS/LPbF
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
100 100
4.5V
10 4.5V 10
1000 3.5
ID = 33A
RDS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)
3.0
2.5
(Normalized)
TJ = 25 ° C 2.0
100
1.5
TJ = 175 ° C
1.0
0.5
V DS = 50V
20µs PULSE WIDTH VGS = 10V
10 0.0
4.0 5.0 6.0 7.0 8.0 9.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C)
3000 20
VGS = 0V, f = 1MHz ID = 16A
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd VDS = 80V
Ciss
2000
12
1500
8
1000
Coss
4
500
Crss FOR TEST CIRCUIT
SEE FIGURE 13
0 0
1 10 100 0 20 40 60 80
VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)
1000 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)
100 100
TJ = 175 ° C
10
100µsec
10
TJ = 25 ° C 1msec
1 1
T A = 25°C 10msec
T J = 175°C
V GS = 0 V Single Pulse
0.1 0.1
0.2 0.6 1.0 1.4 1.8
VSD ,Source-to-Drain Voltage (V) 1 10 100 1000
VDS , Drain-toSource Voltage (V)
35 RD
VDS
30
VGS
D.U.T.
RG
ID , Drain Current (A)
25 +
-VDD
20
V GS
Pulse Width ≤ 1 µs
15 Duty Factor ≤ 0.1 %
10
Fig 10a. Switching Time Test Circuit
5 VDS
90%
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.10 P DM
0.1 0.05 t1
0.02 SINGLE PULSE
0.01 (THERMAL RESPONSE) t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
www.irf.com 5
IRF540NS/LPbF
400
ID
RG D.U.T +
V
- DD 200
IAS A
20V
tp 0.01Ω
V(BR)DSS
tp 0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
50KΩ
12V .2µF
QG .3µF
VGS +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA
IG ID
Charge Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
6 www.irf.com
IRF540NS/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
- +
-
RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D" VDD
-
• D.U.T. - Device Under Test
VGS
[VGS=10V ] ***
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5% [ISD ]
OR
P AR T N U M B E R
IN T E R N AT IO N AL
R E C T IF IE R F 530S
L OGO
D AT E CO D E
P = D E S IG N AT E S L E AD -F R E E
AS S E M B L Y P R O D U C T (O P T IO N AL )
L OT COD E Y E AR 0 = 2 0 0 0
W E E K 02
A = AS S E M B L Y S IT E CO D E
8 www.irf.com
IRF540NS/LPbF
TO-262 Package Outline
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
OR
PART NUMBER
INT ERNAT IONAL
RECT IFIER
LOGO
DAT E CODE
P = DES IGNAT ES LEAD-FREE
AS S EMBLY PRODUCT (OPTIONAL)
LOT CODE YEAR 7 = 1997
WEEK 19
A = AS S EMBLY S ITE CODE
www.irf.com 9
IRF540NS/LPbF
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161)
1.50 (.059) 0.368 (.0145)
3.90 (.153)
0.342 (.0135)
FEED DIRECTION
30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/04
10 www.irf.com
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/