BUK7606-55A: 1. Product Profile

BUK7606-55A
K
PA
D2
N-channel TrenchMOS standard level FET
Rev. 03 — 1 February 2011 Product data sheet
1. Product profile
1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits

 AEC Q101 compliant  Suitable for standard level gate drive
 Low conduction losses due to low sources
on-state resistance  Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V and 24 V loads  Motors, lamps and solenoids
 Automotive and general purpose
power switching
1.4 Quick reference data

Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source Tj ≥ 25 °C; Tj ≤ 175 °C - - 55 V
voltage
ID drain current VGS = 10 V; Tmb = 25 °C; [1] - - 75 A
see Figure 1; see Figure 3
Ptot total power Tmb = 25 °C; see Figure 2 - - 300 W
dissipation
Static characteristics
RDSon drain-source VGS = 10 V; ID = 25 A; - - 13.2 mΩ
on-state Tj = 175 °C; see Figure 12;
resistance see Figure 13
VGS = 10 V; ID = 25 A; - 5.3 6.3 mΩ
Tj = 25 °C; see Figure 12;
see Figure 13
NXP Semiconductors BUK7606-55A
Table 1. Quick reference data …continued

Avalanche ruggedness
EDS(AL)S non-repetitive ID = 75 A; Vsup ≤ 55 V; - - 1.1 J
drain-source RGS = 50 Ω; VGS = 10 V;
avalanche energy Tj(init) = 25 °C; unclamped
[1] Continuous current is limited by package.
2. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
mb D
2 D drain
3 S source
G
mb D mounting base; connected to
drain mbb076 S
2
1 3
SOT404 (D2PAK)
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BUK7606-55A D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
BUK7606-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 03 — 1 February 2011 2 of 13

4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 55 V
VDGR drain-gate voltage RGS = 20 kΩ - 55 V
VGS gate-source voltage -20 20 V
ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1; [1] - 154 A
see Figure 3 [2] - 75 A
Tmb = 100 °C; VGS = 10 V; see Figure 1 [2] - 75 A
IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; - 616 A
see Figure 3
Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 300 W
Tstg storage temperature -55 175 °C
Tj junction temperature -55 175 °C
Source-drain diode
IS source current Tmb = 25 °C [1] - 154 A
[2] - 75 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 616 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; - 1.1 J
avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped
[1] Current is limited by power dissipation chip rating.

[2] Continuous current is limited by package.
03ne93 03na19
200 120
ID
(A) Pder
(%)
150
80
100
40
50 Capped at 75 A due to package
0 0
25 50 75 100 125 150 175 200 0 50 100 150 200
Tmb (°C) Tmb (°C)
Fig 1. Normalized continuous drain current as a Fig 2. Normalized total power dissipation as a
function of mounting base temperature function of mounting base temperature

03nf32
103
ID RDSon = VDS / ID
(A) tp = 10 μs
102 100 μs
Capped at 75 A due to package

1 ms
D.C.
tp
P δ= 10 ms
10
T
100 ms
tp t
T
1
1 10 102
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5. Thermal characteristics
Rth(j-mb) thermal resistance from junction see Figure 4 - - 0.5 K/W
to mounting base
Rth(j-a) thermal resistance from junction mounted on printed-circuit - 50 - K/W
to ambient board; minimum footprint
03nf33
1
Zth(j-mb)
(K/W)
δ = 0.5
10−1 0.2
0.1
0.05
0.02 tp
10−2
P δ=
T
Single Shot
tp t
T
10−3
10−6 10−5 10−4 10−3 10−2 10−1 1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

6. Characteristics
Table 6. Characteristics
Static characteristics
V(BR)DSS drain-source ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 55 - - V
breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 50 - - V
VGS(th) gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C; 2 3 4 V
voltage see Figure 11
ID = 1 mA; VDS = VGS; Tj = 175 °C; 1 - - V
see Figure 11
ID = 1 mA; VDS = VGS; Tj = -55 °C; - - 4.4 V
see Figure 11
IDSS drain leakage current VDS = 55 V; VGS = 0 V; Tj = 175 °C - - 500 µA
VDS = 55 V; VGS = 0 V; Tj = 25 °C - 0.05 10 µA
IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA
VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA
RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 175 °C; - - 13.2 mΩ
resistance see Figure 12; see Figure 13
VGS = 10 V; ID = 25 A; Tj = 25 °C; - 5.3 6.3 mΩ
see Figure 12; see Figure 13
Dynamic characteristics
Ciss input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; - 4500 6000 pF
Coss output capacitance Tj = 25 °C; see Figure 14 - 960 1200 pF
Crss reverse transfer - 510 850 pF
capacitance
td(on) turn-on delay time VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; - 35 - ns
tr rise time RG(ext) = 10 Ω; Tj = 25 °C - 115 - ns
td(off) turn-off delay time - 155 - ns
tf fall time - 110 - ns
LD internal drain from drain lead 6 mm from package to - 4.5 - nH
inductance centre of die ; Tj = 25 °C
from upper edge of drain mounting base - 2.5 - nH
to centre of die ; Tj = 25 °C
LS internal source from source lead to source bond pad ; - 7.5 - nH
inductance Tj = 25 °C
Source-drain diode
VSD source-drain voltage IS = 30 A; VGS = 0 V; Tj = 25 °C; - 0.85 1.2 V
see Figure 15
trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; - 80 - ns
Qr recovered charge VGS = -10 V; VDS = 30 V; Tj = 25 °C - 200 - nC

03nf29 03nf28
400 RDSon8.5
20 10 9
14 (mΩ)
ID 8.5 8.0
(A) 12
7.5
300
VGS (V) = 7.5
7.0
6.5
200
6.5 6.0
5.5
100
5.5 5.0
4.5
4.5
0 4.0
0 2 4 6 8 10 5 10 15 20
VDS (V) VGS (V)
Fig 5. Output characteristics: drain current as a Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values of gate-source voltage; typical values
03aa35 03nf26
10−1 80
ID gfs
(A) (S)
min typ max
10−2
60
10−3
40
10−4
20
10−5
10−6 0
0 2 4 6 0 20 40 60 80 100
VGS (V) ID (A)
Fig 7. Sub-threshold drain current as a function of Fig 8. Forward transconductance as a function of

gate-source voltage drain current; typical values

03nf27 03nf25
120 10
ID VGS
(A) (V)
100
8
80 VDS = 14 V
6
60 VDS = 44 V
4
40
Tj = 175 °C
2
20
Tj = 25 °C
0 0
0 2 4 6 0 40 80 120
VGS (V) QG (nC)
Fig 9. Transfer characteristics: drain current as a Fig 10. Gate-source voltage as a function of turn-on
function of gate-source voltage; typical values gate charge; typical values
03aa32 03nf30
5 12
VGS(th)
(V) RDSon VGS (V) = 5.5
4 (mΩ)
max
6
6.5
8
3 7
typ
8
10
2 min
4
0 0
−60 0 60 120 180 0 40 80 120
Tj (°C) ID (A)
Fig 11. Gate-source threshold voltage as a function of Fig 12. Drain-source on-state resistance as a function
junction temperature of drain current; typical values

03ne89 03nf31
2 9000
C
(pF) Ciss
a 8000
Coss
7000
1.5
6000
5000 Crss
1
4000
3000
0.5
2000
1000
0 0
-60 0 60 120 180 10−2 10−1 1 10 102
Tj (°C) VDS (V)
Fig 13. Normalized drain-source on-state resistance Fig 14. Input and reverse transfer capacitances as a
factor as a function of junction temperature function of drain-source voltage; typical values
03nf24
100
IS
(A)
80
60
40
20
Tj = 175 °C
Tj = 25 °C
0
0 0.2 0.4 0.6 0.8 1.0
VSD (V)
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values

7. Package outline
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404
E A1
D1 mounting
base
HD
Lp
1 3
b c
e e Q
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)

D
UNIT A A1 b c D1 E e Lp HD Q
max.
mm 4.50 1.40 0.85 0.64 11 1.60 10.30 2.54 2.90 15.80 2.60
4.10 1.27 0.60 0.46 1.20 9.70 2.10 14.80 2.20
OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION
05-02-11
SOT404
06-03-16
Fig 16. Package outline SOT404 (D2PAK)

8. Revision history
Table 7. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BUK7606-55A v.3 20110201 Product data sheet - BUK7506_7606_55A v.2
Modifications: • The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type number BUK7606-55A separated from data sheet BUK7506_7606_55A v.2.
BUK7506_7606_55A v.2 20010703 Product Specification - -

9. Legal information
9.1 Data sheet status

Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
9.2 Definitions Suitability for use in automotive applications — This NXP

Semiconductors product has been qualified for use in automotive
Draft — The document is a draft version only. The content is still under applications. The product is not designed, authorized or warranted to be
internal review and subject to formal approval, which may result in suitable for use in medical, military, aircraft, space or life support equipment,
modifications or additions. NXP Semiconductors does not give any nor in applications where failure or malfunction of an NXP Semiconductors
representations or warranties as to the accuracy or completeness of product can reasonably be expected to result in personal injury, death or
information included herein and shall have no liability for the consequences of severe property or environmental damage. NXP Semiconductors accepts no
use of such information. liability for inclusion and/or use of NXP Semiconductors products in such
equipment or applications and therefore such inclusion and/or use is at the
Short data sheet — A short data sheet is an extract from a full data sheet customer’s own risk.
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and Quick reference data — The Quick reference data is an extract of the
full information. For detailed and full information see the relevant full data product data given in the Limiting values and Characteristics sections of this
sheet, which is available on request via the local NXP Semiconductors sales document, and as such is not complete, exhaustive or legally binding.
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail. Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
Product specification — The information and data provided in a Product representation or warranty that such applications will be suitable for the
data sheet shall define the specification of the product as agreed between specified use without further testing or modification.
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however, Customers are responsible for the design and operation of their applications
shall an agreement be valid in which the NXP Semiconductors product is and products using NXP Semiconductors products, and NXP Semiconductors
deemed to offer functions and qualities beyond those described in the accepts no liability for any assistance with applications or customer product
Product data sheet. design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
9.3 Disclaimers customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
Limited warranty and liability — Information in this document is believed to applications and products.
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or NXP Semiconductors does not accept any liability related to any default,
completeness of such information and shall have no liability for the damage, costs or problem which is based on any weakness or default in the
consequences of use of such information. customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
In no event shall NXP Semiconductors be liable for any indirect, incidental, testing for the customer’s applications and products using NXP
punitive, special or consequential damages (including - without limitation - lost Semiconductors products in order to avoid a default of the applications and
profits, lost savings, business interruption, costs related to the removal or the products or of the application or use by customer’s third party
replacement of any products or rework charges) whether or not such customer(s). NXP does not accept any liability in this respect.
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory. Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
Notwithstanding any damages that customer might incur for any reason damage to the device. Limiting values are stress ratings only and (proper)
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards operation of the device at these or any other conditions above those given in
customer for the products described herein shall be limited in accordance the Recommended operating conditions section (if present) or the
with the Terms and conditions of commercial sale of NXP Semiconductors. Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
Right to make changes — NXP Semiconductors reserves the right to make the quality and reliability of the device.
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without Terms and conditions of commercial sale — NXP Semiconductors
notice. This document supersedes and replaces all information supplied prior products are sold subject to the general terms and conditions of commercial
to the publication hereof. sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to
9.4 Trademarks
applying the customer’s general terms and conditions with regard to the Notice: All referenced brands, product names, service names and trademarks
purchase of NXP Semiconductors products by customer. are the property of their respective owners.
No offer to sell or license — Nothing in this document may be interpreted or Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
construed as an offer to sell products that is open for acceptance or the grant, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
conveyance or implication of any license under any copyrights, patents or ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
other industrial or intellectual property rights. QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior HD Radio and HD Radio logo — are trademarks of iBiquity Digital
authorization from national authorities. Corporation.
10. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com

11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 11
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
9.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
9.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
10 Contact information. . . . . . . . . . . . . . . . . . . . . .12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 1 February 2011
Document identifier: BUK7606-55A

BUK7606-55A: 1. Product Profile

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BUK7606-55A

1.1 General description

1.2 Features and benefits

1.4 Quick reference data

Table 1. Quick reference data …continued

[1] Continuous current is limited by package.

Product data sheet Rev. 03 — 1 February 2011 2 of 13

[1] Current is limited by power dissipation chip rating.

Product data sheet Rev. 03 — 1 February 2011 3 of 13

Capped at 75 A due to package

Product data sheet Rev. 03 — 1 February 2011 4 of 13

Product data sheet Rev. 03 — 1 February 2011 5 of 13

Fig 7. Sub-threshold drain current as a function of Fig 8. Forward transconductance as a function of

Product data sheet Rev. 03 — 1 February 2011 6 of 13

Product data sheet Rev. 03 — 1 February 2011 7 of 13

Product data sheet Rev. 03 — 1 February 2011 8 of 13

DIMENSIONS (mm are the original dimensions)

OUTLINE REFERENCES EUROPEAN

Fig 16. Package outline SOT404 (D2PAK)

Product data sheet Rev. 03 — 1 February 2011 9 of 13

Product data sheet Rev. 03 — 1 February 2011 10 of 13

9.1 Data sheet status

9.2 Definitions Suitability for use in automotive applications — This NXP

Product data sheet Rev. 03 — 1 February 2011 11 of 13

agreement is concluded only the terms and conditions of the respective

10. Contact information

For sales office addresses, please send an email to: salesaddresses@nxp.com

Product data sheet Rev. 03 — 1 February 2011 12 of 13

© NXP B.V. 2011. All rights reserved.

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