STGW60V60DF,

STGWT60V60DF
Trench gate field-stop IGBT, V series
600 V, 60 A very high speed
Datasheet - production data

Features
TAB
• Maximum junction temperature: TJ = 175 °C
• Tail-less switching off
• VCE(sat) = 1.85 V (typ.) @ IC = 60 A
• Tight parameters distribution
3
2 3 • Safe paralleling
1 2
1 • Low thermal resistance
• Very fast soft recovery antiparallel diode
TO-247 TO-3P
Applications
• Photovoltaic inverters
Figure 1. Internal schematic diagram
• Uninterruptible power supply
C (2 or TAB)
• Welding
• Power factor correction
• Very high frequency converters

G (1)
Description
This device is an IGBT developed using an
advanced proprietary trench gate field stop
structure. The device is part of the V series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
E (3) maximize the efficiency of very high frequency
converters. Furthermore, a positive VCE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.

Table 1. Device summary

Order code Marking Package Packaging

STGW60V60DF GW60V60DF TO-247 Tube

STGWT60V60DF GWT60V60DF TO-3P Tube

October 2013 DocID024154 Rev 6 1/16

This is information on a product in full production. www.st.com 16
Electrical ratings STGW60V60DF, STGWT60V60DF

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0) 600 V

IC (1)
Continuous collector current at TC = 25 °C 80 A
IC Continuous collector current at TC = 100 °C 60 A
ICP(2) Pulsed collector current 240 A
VGE Gate-emitter voltage ±20 V
IF (1)
Continuous forward current at TC = 25 °C 80 A
IF Continuous forward current at TC = 100 °C 60 A
IFP(2) Pulsed forward current 240 A
PTOT Total dissipation at TC = 25 °C 375 W
TSTG Storage temperature range - 55 to 150 °C
TJ Operating junction temperature - 55 to 175 °C
1. Current level is limited by bond wires
2. Pulse width limited by maximum junction temperature.

Table 3. Thermal data

Symbol Parameter Value Unit

RthJC Thermal resistance junction-case IGBT 0.4 °C/W

RthJC Thermal resistance junction-case diode 1.14 °C/W
RthJA Thermal resistance junction-ambient 50 °C/W

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STGW60V60DF, STGWT60V60DF Electrical characteristics

2 Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 4. Static characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Collector-emitter
V(BR)CES breakdown voltage IC = 2 mA 600 V
(VGE = 0)
VGE = 15 V, IC = 60 A 1.85 2.3
VGE = 15 V, IC = 60 A
Collector-emitter saturation 2.15
VCE(sat) TJ = 125 °C V
voltage
VGE = 15 V, IC = 60 A
2.35
TJ = 175 °C
IF = 60 A 2 2.6 V
VF Forward on-voltage IF = 60 A TJ = 125 °C 1.7 V
IF = 60 A TJ = 175 °C 1.6 V
VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V
Collector cut-off current
ICES VCE = 600 V 25 μA
(VGE = 0)
Gate-emitter leakage
IGES VGE = ± 20 V 250 nA
current (VCE = 0)

Table 5. Dynamic characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Cies Input capacitance - 8000 - pF

Coes Output capacitance VCE = 25 V, f = 1 MHz, - 280 - pF
VGE = 0
Reverse transfer
Cres - 170 - pF
capacitance
Qg Total gate charge - 334 - nC
VCC = 480 V, IC = 60 A,
Qge Gate-emitter charge - 130 - nC
VGE = 15 V, see Figure 29
Qgc Gate-collector charge - 58 - nC

DocID024154 Rev 6 3/16

Electrical characteristics STGW60V60DF, STGWT60V60DF

Table 6. IGBT switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time - 60 - ns

tr Current rise time - 20 - ns
(di/dt)on Turn-on current slope - 2365 - A/μs
VCE = 400 V, IC = 60 A,
td(off) Turn-off delay time - 208 - ns
RG = 4.7 Ω, VGE = 15 V,
tf Current fall time - 14 - ns
see Figure 28
Eon(1) Turn-on switching losses - 0.75 - mJ
Eoff(2) Turn-off switching losses - 0.55 - mJ
Ets Total switching losses - 1.3 - mJ
td(on) Turn-on delay time - 57 - ns
tr Current rise time - 23 - ns
(di/dt)on Turn-on current slope - 2191 - A/μs
td(off) Turn-off delay time VCE = 400 V, IC = 60 A, - 216 - ns
RG = 4.7 Ω, VGE = 15 V,
tf Current fall time TJ = 175 °C, see Figure 28 - 27 - ns
Eon(1) Turn-on switching losses - 1.5 - mJ
Eoff(2) Turn-off switching losses - 0.8 - mJ
Ets Total switching losses - 2.3 - mJ
1. Energy losses include reverse recovery of the diode.
2. Turn-off losses include also the tail of the collector current.

Table 7. Diode switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

trr Reverse recovery time - 74 - ns

Qrr Reverse recovery charge - 703 - nC
IF = 60 A, VR = 400 V,
Irrm Reverse recovery current VGE = 15 V, - 19 - A
diF/dt = 1000 A/μs
Peak rate of fall of reverse
dIrr/ /dt see Figure 28 - 714 - A/μs
recovery current during tb
Err Reverse recovery energy - 184 - μJ
trr Reverse recovery time - 131 - ns
Qrr Reverse recovery charge IF = 60 A, VR = 400 V, - 2816 - nC
Irrm Reverse recovery current VGE = 15 V - 43 - A
diF/dt = 1000 A/μs
Peak rate of fall of reverse
dIrr/ /dt
recovery current during tb TJ = 175 °C, see Figure 28 - 404 - A/μs

Err Reverse recovery energy - 821 - μJ

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STGW60V60DF, STGWT60V60DF Electrical characteristics

2.1 Electrical characteristics (curves)

Figure 2. Power dissipation vs. case Figure 3. Collector current vs. temperature case
temperature
AM17139v1 AM17140v1
Ptot (W) IC (A)

350 80
VGE >_ 15 V, TJ <_ 175 °C
300 70

60
250
50
200
40
150
30
100
20
50 10

0 0
0 25 50 75 100 125 150 175 TC (°C) 0 25 50 75 100 125 150 175 TC (°C)

Figure 4. Output characteristics @ 25 °C Figure 5. Output characteristics @ 175 °C

AM17141v1 AM17142v1
Ic (A) IC (A)
VGE=15 V
TJ = 25 °C TJ = 175 °C
VGE=15 V 13 V
200
200
11 V
13 V 11 V
150 150

9V 9V
100 100

50 50

7V 7V
0 0
0 1 2 3 4 VCE (V) 0 1 2 3 4 VCE (V)

Figure 6. VCE(SAT) vs. junction temperature Figure 7. VCE(SAT) vs. collector current
VCE(sat) AM17143v1 VCE(sat) AM17144v1
(V) (V)
3.2 VGE = 15 V 3.2 VGE = 15 V
IC = 120 A
3.0 3.0 TJ = 175 °C

2.8 2.8

2.6 2.6

2.4 2.4 TJ = 25 °C
IC = 60 A
2.2 2.2

2.0 2.0

1.8 1.8
TJ = - 40 °C
1.6 IC = 30 A 1.6

1.4 1.4

1.2 1.2
-50 -25 0 25 50 75 100 125 150 175 TJ (ºC) 10 20 30 40 50 60 70 80 90 100 110 120 IC (A)

DocID024154 Rev 6 5/16

Electrical characteristics STGW60V60DF, STGWT60V60DF

Figure 8. Collector current vs. switching Figure 9. Safe operating area

frequency
AM17145v1 AM17146v1
Ic [A] I C (A)
1 μs
110
100 Tc=80°C
100 100 μs
90
Tc=100 °C
80
70 10 1 ms

60
50 1
40
30
rectangular current shape, 0.1 (single pulse TC =25 °C,
20 (duty cycle=0.5, VCC = 400V, RG=4.7 Ω, TJ <=175 °C; VGE =15 V)
10 VGE = 0/15 V, TJ =175°C)

0 0.01
1 10 f [kHz] 1 10 100 VCE (V)

Figure 10. Transfer characteristics Figure 11. Diode VF vs. forward current
AM17146v1 AM17148v1
IC (A) VF (V)

TJ= - 40°C
VCE= 5V TJ= 25°C 2.8
200

2.4
150
2
100
1.6
25°C
50
-40°C 1.2
175 °C
175°C
0 0.8
6 7 8 9 10 11 VGE (V) 10 30 50 70 90 110 IF (A)

Figure 12. Normalized VGE(th) vs. junction Figure 13. Normalized V(BR)CES vs. junction
temperature temperature
VGE(th) AM17149v1 V(BR)ces AM17150v1
norm norm
VCE= VGE
1.1 IC= 1 mA IC = 2 mA
1.1

1.0

0.9

1.0
0.8

0.7

0.6 0.9
-50 -25 0 25 50 75 100 125 150 175 TJ (ºC) -50 -25 0 25 50 75 100 125 150 175 TJ (ºC)

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STGW60V60DF, STGWT60V60DF Electrical characteristics

Figure 14. Capacitance variations Figure 15. Gate charge vs. gate-emitter voltage
AM17151v1 AM17152v1
C (pF) VGE (V)
C ies
10000 16 VCC = 480V
IC = 60A
14
C oes
12
1000
C res 10

100 6

f = 1MHz, VGE =0 4

2
10 0
0.1 1 10 VCE (V) 0 100 200 300 Qg (nC)

Figure 16. Switching losses vs. collector Figure 17. Switching losses vs. gate resistance
current
AM17153v1 AM17154v1
E (μJ) E (μJ)

4500 4500
VCC 400V, VGE= 15V, VCC=400V, VGE = 15V,
4000 Rg=4.7Ω, TJ = 175°C
4000 IC = 60 A, TJ = 175 °C

3500
3500 EON
3000
3000
2500 EON
2500
2000
2000 EOFF
1500

1000
1500

500 E OFF 1000

0 500
0 10 20 30 40 50 60 70 80 90 100 110120 Ic (A) 0 10 20 30 40 RG (Ω)

Figure 18. Switching losses vs. junction Figure 19. Switching losses vs. collector
temperature emitter voltage
AM17155v1 AM17156v1
E (μJ) E (μJ)
1500 VGE = 15V, TJ = 175°C
2000 IC = 60 A, Rg = 4.7 Ω
1400 VCC =400V, VGE = 15V, E ON
IC = 60 A, Rg = 4.7 Ω 1800
1300
1200 1600
1100
E ON 1400
1000
900 1200
E OFF
800 1000
700
E OFF 800
600
500 600
400 400
25 50 75 100 125 150 TJ (ºC) 150 200 250 300 350 400 450 Vce (V)

DocID024154 Rev 6 7/16

Electrical characteristics STGW60V60DF, STGWT60V60DF

Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance
AM17157v1 AM17159v1
t(ns) t(ns)
VCC = 400V, VGE = 15V, VCC= 400V, VGE = 15V,
Tj =175°C, Rg = 4.7 Ω Tj =175°C Ic = 60 A

1000
tdoff t doff

100 tr
tr tdon

100 t don

tf tf

10 10
0 20 40 60 80 100 Ic (A) 0 10 20 30 40 Rg (Ω)

Figure 22. Reverse recovery current vs. diode Figure 23. Reverse recovery time vs. diode
current slope current slope
AM17158v1 AM17160v1
Irm (A) trr (ns)
Vr = 400 V, IF = 60 A Vr = 400V, IF = 60 A
50
200

40
175°C 150 175 °C
30

100
20
TJ=25°C

10 50 TJ=25°C

0 0
0 500 1000 1500 2000 di/dt (A/μs) 0 500 1000 1500 2000 di/dt (A/μs)

Figure 24. Reverse recovery charge vs. diode Figure 25. Reverse recovery energy vs. diode
current slope current slope
Qrr (nC)
AM17161v1 Err AM17162v1
(μJ)
Vr = 400V, IF = 60 A
1400 VCC = 400V, VGE = 15V, IF = 60A
2500
1200
2000 175 °C 175°C
1000

1500 800

600
1000
TJ=25°C
400
500
200
TJ=25°C
0 0
0 500 1000 1500 2000 di/dt (A/μs) 0 500 1000 1500 2000 2500 3000 di/dt (A/μs)

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STGW60V60DF, STGWT60V60DF Electrical characteristics

Figure 26. Thermal data for IGBT

ZthTO2T_A
K
d=0.5

0.2

0.1

10-1 0.05

0.02

0.01

Single pulse
-2
10
10-5 10-4 10-3 10-2 10-1 tp (s)

Figure 27. Thermal data for diode

DocID024154 Rev 6 9/16

Test circuits STGW60V60DF, STGWT60V60DF

3 Test circuits

Figure 28. Test circuit for inductive load Figure 29. Gate charge test circuit
switching

AM01504v1 AM01505v1

Figure 30. Switching waveform Figure 31. Diode recovery time waveform

90% di/dt Qrr

VG 10%
IF trr
90%
ta tb
VCE Tr(Voff)
10%
Tcross t
90%
IRRM IRRM
IC Td(off)
10%
Td(on) Tf
Tr(Ion)
Toff
Ton

VF
dv/dt

AM01506v1 AM01507v1

10/16 DocID024154 Rev 6

STGW60V60DF, STGWT60V60DF Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.

Table 8. TO-247 mechanical data

mm.
Dim.
Min. Typ. Max.

A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70

DocID024154 Rev 6 11/16

Package mechanical data STGW60V60DF, STGWT60V60DF

Figure 32. TO-247 drawing

0075325_G

12/16 DocID024154 Rev 6

STGW60V60DF, STGWT60V60DF Package mechanical data

Table 9. TO-3P mechanical data

mm
Dim.
Min. Typ. Max.

A 4.60 5
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b 0.80 1 1.20
b1 1.80 2.20
b2 2.80 3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.90
E 15.40 15.80
E1 13.60
E2 9.60
e 5.15 5.45 5.75
L 19.50 20 20.50
L1 3.50
L2 18.20 18.40 18.60
øP 3.10 3.30
Q 5
Q1 3.80

DocID024154 Rev 6 13/16

Package mechanical data STGW60V60DF, STGWT60V60DF

Figure 33. TO-3P drawing

8045950_A

14/16 DocID024154 Rev 6

STGW60V60DF, STGWT60V60DF Revision history

5 Revision history

Table 10. Document revision history

Date Revision Changes

15-Jan-2013 1 Initial release.

Added:
– New order code STGWT60V60DF and new package
mechanical data TO-3P Table 9 on page 13, Figure 33
23-Apr-2013 2
on page 14.
– Section 2.1: Electrical characteristics (curves) on
page 5.
Updated Table 4: Static characteristics and Figure 12 on
04-Jun-2013 3 page 6.
Document status changed from preliminary to production data.
21-Jun-2013 4 Updated Figure 3: Collector current vs. temperature case.
12-Jul-2013 5 Updated RthJC value for Diode in Table 3: Thermal data.
21-Oct-2013 6 Updated title, features and description in cover page.

DocID024154 Rev 6 15/16

 STGW60V60DF, STGWT60V60DF

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16/16 DocID024154 Rev 6