ELE 438/538 Thin Film Engineering Assignment 1

Selina Cervantes Z1794445

Semiconductor technology improves and changes through generations as society requires.

The need for this constant development is due to the desire for faster, smaller, and simpler
designs. These developmental designs follow a law proposed by Gordon Moore in 1965, where
mathematical models predict that transistors for every silicon chip would double every two years
[2]. This has led to the developmental line of vacuum tubes to transistors, MOSFETS to CMOS
and FinFET devices. Moore’s Law generally predicts that these technological advances give a
0.7X shrinkage in minimum feature size per generation [4].
However, as the desire for smaller and simpler designs grow, we as researchers and
designers are limited to the size and capability of shrinkage. Shrinking devices is limited by the
cost and physical constraints of the materials as well as the technology creating these devices.
Old techniques require investing in high quality and precision tools. Even with these
investments, they still have the possibility of damaging the device and materials during
manufacturing due to physical limitations.
The next potential step for the
development of new nanoscale devises is
through the use of self-assembly materials. Self-
assembly is capable of creating three
dimensional forms around 10nm precision [3].
Self-assembly allows the user to introduce
patterns in nanometer sizes which will then
allow a spontaneous organization of
chemicals/components into pre-defined
structures [3]. For example, “self-assembled
monolayers (SAM) are single layers of
molecules that spontaneously organize
[themselves] into ordered lattice[s] on the surface of a
substrate” [3]. SAMs have been used as molecular
memories and molecular wires.
Self-assembling nanoscale systems have two
parts: Internal and external interactions. Internal
interactions consist of the elements spontaneously
acting together (such as chemical bonds, molecules,
energy, etc.) while external interactions consist of the
users preferred design (such as stamps, patterns,
layers, etc.). As can be seen in figure 2 on the right, researchers can develop pre-designed
patterns and layer multiple assemblies atop each other until the desired design is achieved.
The newest technology is FinFET devices. These devices are smaller and more reliable
than MOSFETS due to their design. By using Self-assembly, they could be scaled down even
farther. This would allow the response time to shorten, the power consumption to lessen and the
overall performance to increase (without relying on difficult and costly designs). “Desired
functionality is obtained by designing and positioning the proper molecules in the device”[3].
Smaller Semiconductor devices can be made, allowing for more devices on a chip, and therefore
adhering to Moore’s law.
 ELE 438/538 Thin Film Engineering Assignment 1
Selina Cervantes Z1794445

Sources:
[1] Bhattacharya, D., & Jha, N. K. (2014). FinFETs: From devices to architectures. Advances in
Electronics, 2014, 1–21. https://doi.org/10.1155/2014/365689
[2] Desai, N., & Kotnis, J. S. (2021). Artificial Intelligence Chips: A Promising Future of
Semiconductor Industry. International Journal of Engineering Research & Technology
(IJERT), V10(10), 233–235.
[3] Lu, W., & Sastry, A. M. (2007). Self-assembly for semiconductor industry. IEEE
Transactions on Semiconductor Manufacturing, 20(4), 421–431.
https://doi.org/10.1109/tsm.2007.907622
[4] Mack, C. A. (2003). The end of the semiconductor industry as we know it. SPIE
Proceedings. https://doi.org/10.1117/12.506867