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1 Introduction
Depending upon the decoder input and the INH signal the
channels of the corresponding multiplexers are selected which is given
in the Table 4.1.
Decoder input
Inhibit MUX1 o/p MUX2 o/p MUX3 o/p
CB A
0 0 0 1 CH1 CH1 -
0 0 1 0 CH2 CH2 -
0 0 1 1 CH3 CH3 -
0 1 0 0 CH4 CH4 -
0 1 0 1 CH5 CH5 -
0 1 1 0 CH6 CH6 -
1 0 0 1 CH7 - CH1
1 0 1 0 CH7 - CH2
1 0 1 1 CH7 - CH3
1 1 0 0 CH7 - CH4
1 1 0 1 CH7 - CH5
1 1 1 0 CH7 - CH6
Power in uw
voltage supplied by the voltage source may vary. The battery may
have an output voltage range. Also, the voltage regulator sitting
inside or outside the chip may have some inaccuracy range defined.
Let us say, a SOC has a nominal operating voltage of 1.2V with 10%
variation. Thus, it can operate at any voltage from 1.08 V to 1.32V.
The integrated circuits have to be tolerable enough to handle these
variations.
Thus in this design process corner condition has tested. The
results have been shown for the traditional process corner conditions,
while they have been obtained through CADENCE SPECTRE
SIMULATOR transistor model for the respective technology node to
account for all short-channel effects. Observe that the actual value of
body bias and its sensitivity to drain current strongly depends on the
process corner: fast, typical, or slow.
For the typical NMOS and PMOS device, maximum drain current
is obtained with a bulk voltage of 959 mV and 315.3mV respectively.
Source and drain junction forward biased leakage current increases
exponentially when the bulk voltage Vbulk is greater than VDD. Ijunc tries
to reach close to Ion which is linearly increasing ON current. It causes
charging and discharging of internal and output node of transistor
become slow. This conflict between (I on) and (Ijunc) is also the cause
for degradation of the output high and low levels. Junction
capacitance increment also slows down the circuit. The PVT corner
simulation of NMOS and PMOS of different corners like small-small
(SS), typical-typical (TT) and fast-fast (ff) is given in Table 4.2 and
Table 4.3.
97
VD
SS MODEL TT MODEL FF MODEL
D
0 0 0 0 0 0 0
Tem -40 C 27 C 110 - 27 110 -40 C 27 C 110 C
0
p C 40 C 0C C
0.9 1.5V 1.43V 1.28 1.3V 1. 1.38 1.47V 1.43 1.25V
V 7V 35 V V
V
0.8 1.5V 1.35V 1.17 1V 1V 1V 1.45V 1.33 1.168
V V V V
0.7 1.40 1.26V 1.08 1V 1V 1V 1.38V 1.25 1.08V
V 5V V V
0.6 1.29 1.165V 990 1V 1V 959 1.29V 1.14 990
V V mv mv 8V mV
0.5 1.19 1.07V 900 992 1V 880 1.199 1.05 900
V V mV mv mV V V mV
0.4 1.10 963 784. 1V 95 800 1.1V 960 781.1
V 8V mV 4 mV 9 mV mV mv
m
V
0.3 1.01 871.2 687. 991 80 678 1.03V 870 689.8
V V mV 7 mV mV 0 mV mV mV
m
V
mV mV 2 mV mV 3 mV mV 3 mV 9 mV mV
0.3V 525m 411 259. 525 411 257 552 434 285
V mV 1 mV mV mV mV mV mV mV
Table 4.4 Operating region and aspect ratio of transistors in OTA design
Operating
Devices W (um) / L (nm) ID
region
Sub-threshold
M1,2 20/180 393.4nA
region
Sub-threshold
M3,4 50/180 393.4nA
region
100
Sub-threshold
M5,6 10.02/180 514.1nA
region
Sub-threshold
M7,8 1/180 120nA
region
Sub-threshold
M9,10 1/180 120nA
region
Sub-threshold
M11,12 1/180 120nA
region
Parameter Measured
Gain 58dB
Bandwidth 282.16KHz
CMRR 89dB
PSRR 95dB
The design summary of notch filter is given in Table 4.6 shown below.
Center Frequency
49.286Hz
Low cut-off Frequency
47.3Hz
High cut-off frequency
52.1Hz
Center Frequency
17.058Hz
Low cut-off Frequency
16.414Hz
High cut-off frequency
17.91Hz
110
the measured result. This circuit is tested for the ECG frequency
ranging from 40 beats per min to 200 beats per min. The ECG signal
is filtered by band pass filter that allows only QRS complexes which is
given as input to the present system. The half wave rectifier removes
the negative components Q and S in the QRS complex and allows only
R peak. The sample and hold circuit samples these R peaks which set
Cadence Tool
MULTIPLEXER DESIGN
S.N Author TITLE Journal Year Specificatio
o n
1. Przemys.a “Low Power, IJET 2010 Power
w High Dissipation
Rydygier, Dynamic 0.28 mW
Range with supply
Analogue voltage 3.3v
Multiplexer
for Multi-
Channel
Parallel
Recording
Neuronal
Signals
Using Multi-
Electrode
Arrays”
2. Jinhe Cai “A Portable Volume 1.8V power
Low-Power SPRINGE 42, 2014 supply and
7-Lead ECG R the power
Recorder required is
with a New around
Analogue 40mW
Front-End
IC”
3. Jun-Chau A 15-Gb/s IEEE VOL. 16, Power
Chien, 2:1 NO. 10, consumption
Multiplexer OCTOBER of 110 mW
in 0.18-_m 2006 from a
CMOS 2-V supply
voltage
4 Daniel 40-Gb/s 2:1 IEEE VOL. 38, 1.5V supply
Kehrer Multiplexer JSSC NO. 11, voltage and
and 1:2 NOVEMBE 108mW
Demultiplex R 2003 power
er in consumption
120-nm
Standard
CMOS
5 Present Supply
124
work voltage 0.4V
and power
consumption
22.12μW
AMPLIFIER DESIGN
S.N Author TITLE Journals Year Specificat
o ion
1 Shahab Low Voltage IEEE Mar. 0.8v
Ardalan, Cascode Explorer 2002. POWER
Amplifier SUPPLY
AND 82uW
power
consumpti
on
2 Woradorn An Energy- IEEE VOL. 1, Power:7.5
Wattanapa Efficient TRANSACTI NO. 2, 6uW
nitch Micropower ONS JUNE
Neural 2007
Recording
Amplifier
3 Leon Fay A Micropower IEEE Vol. 3, Power:2.7
Electrocardio TRANSACTI no. 5, 6uW
gram ONS Oct
Amplifier 2009.
4 Jun Giap A low power ARPN VOL. 9, The power
Lau low noise Journal of NO. 12, consumpti
cmos Engineering DECEMB on is 5.51
amplifier for and Applied ER 2014 µW and
portable Sciences low noise
ecg of 17.2
monitoring µV/VHz at
application 10 Hz.
High
differential
voltage
gain of
54.5dB
and
71dB in
5 Jesus Ruiz A Low Noise Sensors 2015, Supply
Amplifier for 15 Voltage:1.
125
Neural Spike 2V
Recording Power:
Interfaces 1.92uW
6 Siddharth Design of Indian Vol 9. Supply
Bhat Low Voltage Journal of May Voltage:0.
CMOS OTA Science and 2016 4V
Using Technology, Power:
Bulk-Driven 350uW
Technique
7 Present Voltage:0.
work 4V
Power:620
nW
with notch
filter for
3.1GHz–
10.6GHz
ultra-
wideband
wireless
receiver
6. Present Supply
work voltage:0.4V
Power:768.9nW
for real-
time
analysis of
ECG in
portable
devices
5 Present Supply
work voltage:0.4v
Power:3.997μW
4.7. Summary