¥ KEY CONCEPTS FOR FETs (UFET, DMOSFET, and EMOSFET) Field-effect transistors are unipolar devices (one-charge carrier). The three FET terminals are source, COMPARISON BETWEEN A FET AND BJT ase, Collector, ara, algae Terminate as Drain, Source site Relatveiybgger Cena amar The JFET operates with a reverse- Unipolar (uses only Bipolar uses bth biased pn junction (gate-to-source). Principe ct tacronsand tes ite lcs or eee ‘on its operations) One of the most important: es NPN and PNP characteristics of the FET is its high input impedance. Current-Controlled vottage-Controlled mime up curen (MUS ANtEN apt encton te get rine pul tage) The high input resistance of a JFET is due to the reverse-biaced gate- ‘ou-Cicuitbia Forward Reverse . : Relatively Low (ve Very source junction. Wennaaney iv eae Sree ‘iret Typical ac voltage gains for BJT Retotively more Retativey tess amplifiers are a great deal more than "et Sensitvny ‘sensitive sensitive T: Less stale Me table oat rele sosty (atiected by mchaffected by temperature "temperature vortions) variations) FETs are more temperature stable than BJTs, and FETs ate usually smaller than BJTs, making them particularly useful in integrated-circuit (IC) chips. Reverse bias of a JFET produces adepletion region within the channel, thus increasing channel resistance. JFET SCHEMATICSYMBOL v PLCHANNEL N-CHANNEL, The BUT transistor is a current- controlled device, whereas the JFET transistor is a voltage-controlled device. JFETs are voltage-controlled devices Drain Drain = v Gate Gate which means that the drain current is Source Aiaita controlled by the amount of gate-source voltage. Page 1 of 10 For more notes, practice questions with solutions, and video discussions, please visit/contact: (@ wwrm.percdclearnhub.org [FJ PERCOC LEARNHUB Manila (i) Peredc Learnhub Q 0949 6699588 (9 (02) 781 1005 (Bf 3 RIV.2008 Den Lorenzo Bldg., P. Paredes St, Sampaloc, Manila (front of PRC)p KR coe ¥ Accurrent-controlled device is o which a current defines the oper conditions of the device, whereas a POHANNEL N-cHANNEL voltage-controlled device is one in which a particular voltage defines the operating conditions. JFET : CONSTRUCTION Y The JFET can actually be used as a voltage-controlled resistor because of aunique sensitivity of the drain-to- source impedance to the gate-to- source voltage. Y AJFETisa “normally ON" device because drain current flows whet Vcs = OV. The pinch-off voltage, is the drain-source voltage at which drain current levels off. Y The maximum current for any JFET is labeled loss afd occurs when Vos = OV. Y The minimum current for a JFET occurs at pinch-off defined by Vos = Vr. Y For an n-channel JFET, Ves can vary from zero negatively to cutoff, Vosj, For a p-channel JFET, VGS can vary from zero positively to Vesion). Y In JFET, loss is the maximum drain current for a JFET and is defined by the conditions Vs = O Vand VDS > |Vrl. Y' In JFET, loss is the constant drain current when Ves = O. This is true for both JFETs and D- MOSFETs. OR IPOEATTER CERT “The relationship between the drain current RPPEMEIIE and the gate-to-source voltage of a JFET is a BLS oniincar one defined by Shockley's equation. As ee ‘the current level approaches loss, the sensitivity — OF lo to changes in Vz increases significantly. core VY. AFETis called a square-law device because a7 of the relationship of In to the square of a term a containing Ves. Page 2 of 10 For more notes, practice questions with solutions, and video discussions, please visit/contact: (@ worw-peredclearhub.org Fj PERCDCLEARNHUS—Manila EQ PeredcLeanhub Q 0949.668588 @ (02) 781 1005, {Af ar Rw.3008 Don Lorenzo Bde, redes St, Sampaloc, Manila (front of PRC)eT amines facebook page Common-Source IMPORTANT RELATIONSHIPS JFET BIT Vas\? In=Ips(1--8) c= Pla Ve Common-Drain/ In=ls Se kak Source-Follower Ig =0A Ve =07V JFET OPERATING REGIONS OHMICREGION —JFET act slike avoltage controlled resistor. PINCH-OFF REGION orcuT. —_YFETacteasanopen OFF REGION ote SATURATION or —-JFETactsasan ACTIVEREGION — amplifier Page 3 of 10 For more notes, practice questions with solutions, and video discussions, please visit/contact: (@ worw-peredclearhub.org Fj PERCDCLEARNHUS—Manila EQ PeredcLeanhub Q 0949.668588 @ (02) 781 1005, {Rf ar nw.3008 Don Lorenzo Big, . Paredes St, Sampaloe, Mani front of PRE)= eR. laa vIn JFET, the level of Voothat results in |p =O mA is defined by Vos = V>, with V; being a negative voltage for n-channel devices and a positive voltage for p-channel JFETS. Y AJFETusedas variable resistor is biased in the ohmic region. ¥ To bias in the ohmic region, drain current must be much smaller than drain to source saturation current. Y The gate voltage controls drain-to-source resistance in the ohmic region. Y When a JFETis biased at the origin (Vos = O, lo = O), the ac channel resistance is controlled by the gate voltage. ¥ MOSFETs differ from JFETs in that the gate of a MOSFET /s insulated from the channel by an SiO, layer, whereas the gate and channel n a JFET are separated by a pn junction. v There is no direct electrical connection between the gate terminal and the channel of a MOSFET. Y Its the ineulating layer of Si02 in the MOSFET construction that accounts for the very desirable high input impedance of the device. Y’ There are two basic types of MOSFETs: E-MOSFETs and D-MOSFETs. Like JFETs, MOSFETS are voltage-controlled devices. JFET BIAS VOLTAGES P-CHANNEL N-CHANNEL Visit our YougMit) Channel re Core ic Video Lectures Page 40f 10 For more notes, practice questions with solutions, and video discussions, please visit/contact: (@ worw-peredclearhub.org Fj PERCDCLEARNHUS—Manila EQ PeredcLeanhub Q 0949.668588 @ (02) 781 1005, {Af ar Rw.3008 Don Lorenzo Bde, redes St, Sampaloc, Manila (front of PRC)» eR com ¥ MOSFETs are availablein one of two types: depletion — N-CHANNEL DMOSFET and enhancement. The depletion-type MOSFET has the same transfer Drain characteristics as a JFET for drain currents up to the Ipss level. At this point the characteristics of a depletion-type MOSFET continue to levels above lose, whereas those of the JFET will end, Gn p ¥ The arrow in the symbol of n-channel JFETs or Channel MOSFETs will always point in to the center of the symbol, whereas those of a p -channel device will always point out of the center of the symbol. Sour Y The main difference between a JFET anda MOSFET is, i that the gate in the MOSFET is insulated from the channel by a thin layer of silicon dioxide (Si0,). This makes the input impedance of a MOSFET many times: higher than that of a JFET. Y_ D-MOSFETS are “normally ON" devices because drain s. current flows when V GS = OV. ForD-MOSFETS, | pss, isnot the maximum possible drain current. ¥ AD-MOSFET can operate in either the enhancement or depletion mode. ‘An E-MOSFET is a “normally OFF" device because there is no drain current when Vs = OV. For anE-MOSFET, Voaia)is the minimum gate-source voltage that produces drain current. YOne disadvantage of MOSFETs is their Watch extreme sensitivity to damage by electrostatic discharge (ESD). When handling MOSFETs, extreme caremust be taken to ensure that static electricity does @ [ percdclearnhyk.org) | not puncture the thin layer of SiO, separating CA percdclearnhyb org the gate and channel. Page 5 of 10 For more notes, practice questions with solutions, and video discussions, please visit/contact: (@ worw-peredclearhub.org Fj PERCDCLEARNHUS—Manila EQ PeredcLeanhub Q 0949.668588 @ (02) 781 1005, Jef 3¢ 501.3008 Don Lorenzo Bl, Paredes St, Sampalg, Mana (ont of PRC)@ ee N-CHANNELEMOSFET % —_ When handling MOSFETs, wear a grounded wrist strap! Drain ¥ The transfer characteristics of an enhancement type MOSFET are not defined by Shockley's equation. but rather by a nonlinear equation controlled by the gate-to- source voltage, the threshold voltage, and a constant k defined by the device employed. The resulting plot of lo versus Vos rises exponentially with increasing values of Vos. ¥ Always handle MOSFETs withadditional care due to the static electricity that exists in places we might least suspect. Do not remove any shorting mechanism between the leads of the device until itis installed. ¥ —__ACMOS (complementary MOSFET) device employs a unique combination of a p-channel and an n-channel MOSFET with.a single set of external leads. It has the advantages of'a very high input impedance, fast switching Soo speeds, and low operating power levels, all of which make it very useful in logic circuits. YA depletion MOSFET (D-MOSFET) can operate with a zero, positive, or negative gate to ‘source voltage. The D-MOSFET has a physical channel between the drain and source. Y Foran n-channel D-MOSFET, negative values of Ves produce the depletion mode and positive values produce the enhancement mode. Y Theenhancement MOSFET (E-MOSFET) has no physical channel. Y Unlike JFETs and D-MOSFETs, the E-MOSFET cannot operate with Vis = OV. Page 6 of 10 For more notes, practice questions with solutions, and video discussions, please visit/contact: (@ worw-peredclearhub.org Fj PERCDCLEARNHUS—Manila EQ PeredcLeanhub Q 0949.668588 @ (02) 781 1005, Jef 3¢ 501.3008 Don Lorenzo Bl, Paredes St, Sampalg, Mana (ont of PRC)» eR com ¥ Achannel is induced in an E-MOSFET by the application of AaVGS greater than the threshold value, Vee P-CHANNEL EMOSFET Drain ¥ An E-MOSFET has No Inco parameter. It is extremely stall, if specified (ideally 0). ¥ AnnchannelE-MOSFET has a positive Veo Ap-channel E-MOSFET has a negative Vosien. Y The transfer characteristic curve for a D-MOSFET intersects the vertical lp axis. ¥ The transfer characteristic curve for an E-MOSFET does not intersect the lp axis, Y All MOS devices are subject to damage from electrostatic discharge (ESD). Y Midpoint bias for a D-MOSFET is lo setting Vos =O. »e9 obtained by Y The gate of azero-biased D-MOSFET Is at OV due to alarge resistor to ground. ¥ AnE-MOSFET must have aVos@greater than the threshold value. Y A depletion-type MESFET includes a metal-semiconductor junction, resulting in characteristics that match those of an n -channel depletion-type JFET. Enhancement type ¥ MESFETs have the same characteristics as enhancement-type MOSFETs. The result of [hi ae Poe this similarity is that the same type of de ni and a¢ atalysis techniques can be applied to [Meme l CGM a MESFETs as was applied to JFETs. een eee ECE Y—Depletion-type and —_enhancement-type MESFETs are made with an n-channel between the drain and the source, and ‘therefore only n-type MESFETs are commercially available. Page 7 of 10 For more notes, practice questions with solutions, and video discussions, please visit/contact: (@ worw-peredclearhub.org Fj PERCDCLEARNHUS—Manila EQ PeredcLeanhub Q 0949.668588 @ (02) 781 1005, Jef 3¢ 501.3008 Don Lorenzo Bl, Paredes St, Sampalg, Mana (ont of PRC)KR exer ea The insulated-gate bipolar transistor (IGBT) combines P-CHANNEL DMOSFET ‘the input characteristics of a MOSFET with the output characteristics of a BUT. ¥ The IGBT has three terminals: emitter, gate, and collector. Y IGBTs are used in high-voltage switching applications. Y Depletion-type and enhancement-type MESFETs are made with an n-channel between the drain and the source, and therefore only n-type MESFETs are Sour commercially available. ¥ An open gate is hard to detect in a zero-biased D- MOSFET because the gate is normally at OV; however, erratic behavior may occur. a Y Anopengateis easy todetect inan E-MOSFET because the gate is normally at avoltage other than OV. ¥ Acommon-drain amplifier is more commonly known as a source follower. A source follower has high input impedance, low output impedance, and a voltage gain less than one. The transconductance of an FET relates the output current, |. to the input voltage, Vix YY Thevoltage gain of a common-source amplifier is determined largely by the transconductance, u and the drain resistance, Ry. Y The internal drain-to-source resistance, of a FET influences (reduces) the gain if it is not. sufficiently greater than R, so that it can be neglected. Y Anunbypassed resistance between source and ground (Rs) reduces the voltage gain of an FET amplifier. Y Aload resistance connected to the drain of a common-source amplifier reduces the voltage gain. Page 8 of 10 Formore notes, practice questions with solutions, and video discussions, please visit/contact: (@ worw-peredclearhub.org Fj PERCDCLEARNHUS—Manila EQ PeredcLeanhub Q 0949.668588 @ (02) 781 1005, {Af ar Rw.3008 Don Lorenzo Bde, redes St, Sampaloc, Manila (front of PRC)@ ee The input resistance at the gate of a FET is extremely high. The voltage gain of a common-drain amplifier (source-follower) is always slightly less than 1. There is no phase inversion between gate and source in a source-follower. Y The input resistance of acommon-gate amplifier is the reciprocal of g.. The cascode amplifier combines aCS amplifier and a CG amplifier. Y Ananalog switch passes or blocks an analog signal when turned on or off by a digital control input. Y Complementary MOS (CMOS) is used in low-power digital switching circutts. Y CMOS uses an n-channel MOSFET and a p-channel MOSFET connected in series. Y The transconductance parameter gqis determined by the ratio of the change in drain current. associated with a particular change in gate-to-source voltage in the region of interest. The steoper the slope of the | D -versus- V GS curve, the greater is the level of g.. In addition, the closer the point. or region of interest ‘to the saturation current Ipss, the greater is the transconductance parameter. Y Onopecification sheets, gais provided as y.. Te na step le tel PUL c i) CMe h tii Master ECE Laws by using our PercBook App me ee Pre) Page 9 of 10 For more notes, practice questions with solutions, and video discussions, please visit/contact: (@ worw-peredclearhub.org Fj PERCDCLEARNHUS—Manila EQ PeredcLeanhub Q 0949.668588 @ (02) 781 1005, Jef 3¢ 501.3008 Don Lorenzo Bl, Paredes St, Sampalg, Mana (ont of PRC)» eR com COMPARISON OF PARAMETERS FET CONFIGURATION COMMON GATE COMMON DRAIN COMMON SOURCE Voltage gain High Current gain Low Power gain Low Input resistance Low Output resistance High Input / output 0 phase relationship Teme C RL CTR CRM Pratt) (SOURCE FOLLOWER) Low Medium High Medium Medium High High Medium Low Medium or 180' de TOR meal Tee Meta Pret] ee AOR answers and solutions! Pre] Page 10 of 10 For more notes, practice questions with solutions, and video discussions, please visit/contact: (@ woewperedclearhub.org Fj PERCDCLEARNHUS Manila Percdcearshub 0549669 9588 (@ (02) 761 1005, Jef 3¢ 501.3008 Don Lorenzo Bl, Paredes St, Sampalg, Mana (ont of PRC)