, eR. texonay en KEY CONCEPTS FOR BUTs y¥ The BJT (bipolar junction transistor) is constructed with three regions: base, collector, and emitter. TYPE CONSTRUCTION ¥ The BJT has two pn junctions, the base-emitter junction and the base-collector junction. PNP Y Current in a BUT consists of both free electrons and holes, thus the term bipolar, Y The base region is very thin and lightly doped NPN H Nila le compared to the collector and emitter regions. Y The two types of bipolar junction transistor are ‘the npn and the pnp. Y Tooperate as an amplifier, the base-emitter junction must be forward-biased and the base- collector junction must be reverse-biased. This is called forward-reverse bias. ¥ The three currents in the transistor are the base current (Is), emitter current (Ir), and collector current (Ic). ¥ — InBJT currents, | is very small compared tol and le. TYPE ‘SCHEMATIC SYMBOL Y The de current gain of a transistor configured as Collect common-emitter is the ratio of |: to ly and is designated Boe. Values typically range from less than 20 to several Base PNP hundred. | oe Boc is usually referred to as hre on transistor datasheets. Cotector Y The ratio of Ic to Ir is called apg. Values typically NPN | &* range from 0.95 to0.99. ea ¥ There is avariation in Boc over temperature and also from one transistor to another of the same type. Page 1 of 8 For more notes, practice questions with solutions, and video discussions, please visit/contact: (@ worm percdclearnhub.org [FJ PERCOCLEARNHUB Manila (i Peredclearnhub J 0949 6699588 (@ (02) 781 1005 (Bf 3 RIV.2008 Den Lorenzo Bldg., P. Paredes St, Sampaloc, Manila (front of PRC)¥ Whenatransistoris forward-reverse biased, the voltage gain depends on the internal emitter resistance and the external collector resistance. Y Voltage gainis the ratio of output voltage to input voltage. Y transistor can be operated as an electronic switch in cutoff and saturation. In cutoff, both pn junctions are reverse-biased and there is essentially no collector current. ‘The transistor ideally behaves like an open switch between collector and emitter: Y Insaturation, both pn junctions are forward-biased and the collector current is maximum. The transistor ideally behaves like a closed switch between collector and emitter. Y In a phototransistor, base current is TYPE 2-DIODE ANALOGY produced by incident li ¥ Aphototransistor can be either a two-lead E ¢ ora three-lead device. PNP rs ¥ An optocoupler consists of an LED and a 2 photodiode or phototransistor. Y Optocouplers are used to. electrically e é isolate circuits, NPN on Y ‘There are many types’ of transistor 8 packages using plastic, metal, or ceramic. Y Two basic package’ types for BUTS are through-hole and surface mount. fer Mall RRs Y It is best.to check a transistor in-circuit [ielanlelele) Mslolel before removing it. ry " ¥~Gommon faults in transistor circuits are open junctions, low Boc. excessive leakage currents, and external opens and shorts on the circuit board. Page 2 of 8 For more notes, practice questions with solutions, and video discussions, please visit/contact: (@ worw-peredclearhub.org Fj PERCDCLEARNHUS—Manila EQ PeredcLeanhub Q 0949.668588 @ (02) 781 1005, Jef 3¢ 501.3008 Don Lorenzo Bl, Paredes St, Sampalg, Mana (ont of PRC)¥ Semiconductor devices have the following advantages over vacuum tubes: They are (1) of smaller size, (2) more lightweight, (3) more tugged, and (4) more efficient. In addition, ‘they have (1) no warm-up period, (2) no heater requirement, and (3) lower operating voltages. Y Transistors are three-terminal devices of [@ percdclearnh borg three semiconductor layers having a base or center layer a great deal thinner than the other two layers. The outer two layers are both of either n - or p -type materials, with the sandwiched layer the opposite type. fel Cela] Y The de emitter current is always the largest current of a transistor, whereas the base current is always the smallest. The emitter current is always the sum of the other two. Y ‘The collector current is made up of two component: minority current (also called the leakage current). he majority component and the The arrow in the transistor symbol defines the direction of conventional current flow for the emitter current and thereby defines the direction for the other currents of the device. Y A three-terminal device needs two-sets of characteristics to completely define its characteristics. Inthe active region of a transistor, the base-emitter junction is forward-biased, whereas the collector-base junction is reverse-biased. Inthe cutoff region the base-emitter and collector-base junctions of a transistor are both reverse-biased. E-B Junction €-BJunction —_Region of operation Application Fonward-biased —_-Reverse-biased Forward active made Amplifier Forward-biased —-Forward-biased Saturation mode Closed switch Reverse-biased _-Reverse-blased Cutott mode Open switch Reverse-biased —_‘Forward-biased Reverse active mode = — Page 3 of & For more notes, practice questions with solutions, and video discussions, please visit/contact: (@ worw-peredclearhub.org Fj PERCDCLEARNHUS—Manila EQ PeredcLeanhub Q 0949.668588 @ (02) 781 1005, {Rf ar nw.3008 Don Lorenzo Big, . Paredes St, Sampaloe, Mani front of PRE)Y Inthe saturation region the base-emitter and collector-base junctions are forward-biased. Take our 5-Level Board Exam App! ECE Y Onan average basis, as a first approximation, ‘the base-to-emitter voltage of an operating transistor can be assumed to be 0.7 V. Dena) Y The quantity alpha (a) relates the collector and emitter currents and is always close to one, foie Y The impedance between terminals of a forward-biased junction is always relatively small, whereas the impedance between terminals of a reverse-biased juniction is usually quite large. Y Thearrowin the symbol of an npn transistor points out of the device (not pointing in), whereas the arrow points in to the center of the symbol for a pnp tratisistor (pointing in). Y Forlinearamplfication purposes, cutoff for the cofmmon-emitter configuration willbe defined by Y The quantity beta (8) provides an important relationship between the base and collector currents, andis usually between 50 and 400. YY The de beta is defined by a siniple ratio of de currents at an operating point, whereas the ac beta is sensitive to the characteristics in the region of interest. For most: applications, however, the two are consideréd equivalent as a first. approximation. CONFIGURATION Common-Base Common-Emitter Common-Collector/ Emitter-Follower Page 4 of 8 For more notes, practice questions with solutions, and video discussions, please visit/contact: (@ worw-peredclearhub.org Fj PERCDCLEARNHUS—Manila EQ PeredcLeanhub Q 0949.668588 @ (02) 781 1005, Jef 3¢ 501.3008 Don Lorenzo Bl, Paredes St, Sampalg, Mana (ont of PRC)Y¥ Toensure that a transistoris operating within its maximum power level rating, simply find the product of the collector-to-emitter voltage and the collector current, and compare it to the rated value. Y Atransistor is made up of three doped regions: the emitter, base, and collector regions, Y The base is a very thin and lightly doped region that is sandwiched between the emitter and collector regions. - ratio of an amplifiers output current to GURRENTGAIN: ratostenanytere epee conmaveanon | cunnenran ean rearon cB Alpha (a) g Pea ce Beta (B) =f cc Gamma (y) y=Bra The emitter region is the most heavily doped region in a transistor. It's function is to emit or inject current carriers into the base region. Y The collector region is moderately doped and is the largest of all three transistor regions. Most of the currént catriers injected into the base are attracted into the collector region rather than flawing out: from the base lead. ¥ Inatransistor, e=ls+lo Practice more MCQs with CTE aC MCC Y The dc alpha (c1p¢ ) is the ratio of de collector currant to dc emitter current. ire = Y The de beta ( Bs.) is the ratio of de collector current to dc base current. Page 5 of 8 For more notes, practice questions with solutions, and video discussions, please visit/contact: (@ worw-peredclearhub.org Fj PERCDCLEARNHUS—Manila EQ PeredcLeanhub Q 0949.668588 @ (02) 781 1005, {Af ar Rw.3008 Don Lorenzo Bde, redes St, Sampaloc, Manila (front of PRC)@ ee ¥ Atransistor has four operating regions: the breakdown region, active region, saturation MARR IM (111] Tube Reutty region, and the cutoff region. co ¥ When a transistor is operating in the active region, the collector acts like acurrent source PRE MMe whose value is lc =» x Be. Video Lectures Y The power dissipation rating of a transistor decreases for temperatures above 25°C. Manufacturers specify a derating factor in W/°C so that the transistor's power rating canbe determined for any temperature. Y Transistors must be properly biased to obtain the desired circuit voltages and currents. When properly biased, the transistor can amplify ac signals. Y The most commonly used biasing techniques for transistors include base bias, voltage divider bias, and emitter bias. Y Base bias is seldom used becauseit has avery unstable @ point. DC LOAD LINE Y Voltage divider bias is the most common way cas = to bias a transistor. It provides a very stable Q a 7 point when designed properly. ef senee | P v Emitter bias using two power supplies provides avery stable @ point. YA de load line is a graph that shows all possible operating points for Ic and V ce in a transistor amplifier. ese Curent Y The endpoints for the de load line are labeled I ca and V cep - All points between cutoff and saturation are in the active region. Page 6 of & For more notes, practice questions with solutions, and video discussions, please visit/contact: (@ worw-peredclearhub.org Fj PERCDCLEARNHUS—Manila EQ PeredcLeanhub Q 0949.668588 @ (02) 781 1005, Jef 3¢ 501.3008 Don Lorenzo Bl, Paredes St, Sampalg, Mana (ont of PRC)@ KR are COMPARISON OF PARAMETERS: TRANSISTOR CONFIGURATION COMMON BASE COMMON COLLECTOR — COMMON EMITTER (EMITTER FOLLOWER) Voltage gain High Low Medium Current gain Low High Low Input / output phase 0 relationship Medium Power gain Medium, High f 180 Input resistance Low High igh Medium ‘Output resistance Low Medium Get more notes from our facebook page om Master ECE Laws by using or PercBook App in ECE Laws! ee AS eR Cee Bec Pret] ry Coane Page 7 of & For more notes, practice questions with solutions, and video discussions, please visit/contact: (@ woewperedclearhub.org Fj PERCDCLEARNHUS Manila Percdcearshub 0549669 9588 (@ (02) 761 1005, Jef 3¢ 501.3008 Don Lorenzo Bl, Paredes St, Sampalg, Mana (ont of PRC)‘LeARNBY VED SERIES Page 8 of & For more notes, practice questions with solutions, and video discussions, please visit/contact: @ wwrwpercdclearnhub.org [FJ PERCDC LEARNHUB-Manila EB Percdclearnhub 0949 669 9588 ( (02) 781 1005 ‘Bf 3 RM.3008 Den Lorenzo Bidg., P. Paredes St., Sampaloc, Manila (front of PRC)