TrenchPTM IXTA44P15T VDSS = - 150V

Power MOSFETs IXTP44P15T ID25 = - 44A

IXTQ44P15T RDS(on) ≤ 65mΩΩ
P-Channel Enhancement Mode
Avalanche Rated
IXTH44P15T
TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ)

G
S G
D
D (Tab) G S
DS D (Tab)
Tab

Symbol Test Conditions Maximum Ratings TO-247 (IXTH)

VDSS TJ = 25°C to 150°C - 150 V
VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 150 V
VGSS Continuous ±15 V
VGSM Transient ±25 V G
D
S D (Tab)
ID25 TC = 25°C - 44 A
IDM TC = 25°C, Pulse Width Limited by TJM -130 A G = Gate D = Drain
IA TC = 25°C - 22 A S = Source Tab = Drain
EAS TC = 25°C 1 J
PD TC = 25°C 298 W
TJ -55 ... +150 °C Features
TJM 150 °C
z
Tstg -55 ... +150 °C International Standard Packages
z
Avalanche Rated
TL 1.6mm (0.062 in.) from Case for 10s 300 °C z
Extended FBSOA
TSOLD Plastic Body for 10s 260 °C z
Fast Intrinsic Diode
Md Mounting Torque (TO-220, TO-247 & TO-3P) 1.13/10 Nm/lb.in. z
Low RDS(ON) and QG
Weight TO-263 2.5 g
TO-220 3.0 g Advantages
TO-3P 5.5 g
TO-247 6.0 g z
Easy to Mount
z
Space Savings
z
High Power Density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max. Applications

BVDSS VGS = 0V, ID = - 250μA -150 V z

High-Side Switching
z
VGS(th) VDS = VGS, ID = - 250μA - 2.0 - 4.0 V Push Pull Amplifiers
z
DC Choppers
IGSS VGS = ±15V, VDS = 0V ±100 nA z
Automatic Test Equipment
z
IDSS VDS = VDSS, VGS = 0V - 15 μA Current Regulators
z
TJ = 125°C - 750 μA Battery Charger Applications

RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 65 mΩ

© 2013 IXYS CORPORATION, All Rights Reserved DS100023B(01/13)

 IXTA44P15T IXTP44P15T
IXTQ44P15T IXTH44P15T
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = -10V, ID = 0.5 • ID25, Note 1 27 45 S
Ciss 13.4 nF
Coss VGS = 0V, VDS = - 25V, f = 1MHz 675 pF
Crss 183 pF
td(on) 25 ns
Resistive Switching Times
tr 42 ns
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
td(off) 50 ns
RG = 1Ω (External)
tf 17 ns
Qg(on) 175 nC
Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 65 nC
Qgd 58 nC
RthJC 0.42 °C/W
RthCS TO-220 0.50 °C/W
TO-247 & TO-3P 0.21 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
IS VGS = 0V - 44 A
ISM Repetitive, Pulse Width Limited by TJM -176 A
VSD IF = IS, VGS = 0V, Note 1 -1.3 V
trr 140 ns
IF = - 22A, -di/dt = -100A/μs
QRM 0.87 μC
VR = - 75V, VGS = 0V
IRM -12.4 A

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
 IXTA44P15T IXTP44P15T
IXTQ44P15T IXTH44P15T
TO-247 Outline TO-3P Outline

Pins: 1 - Gate 2,4 - Drain

1 = Gate 3 - Source
2 = Drain
3 = Source

TO-263 Outline
TO-220 Outline

Pins: 1 - Gate 2 - Drain

3 - Source

© 2013 IXYS CORPORATION, All Rights Reserved

 IXTA44P15T IXTP44P15T
IXTQ44P15T IXTH44P15T

Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC

-44 -180
VGS = -10V VGS = -10V
- 8V -160 - 9V
-36 - 7V - 8V
-140

- 6V -120
-28
ID - Amperes

ID - Amperes
- 7V
-100

-20 -80

-60
- 6V
-12
- 5V -40

-20 - 5V
-4

0
0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 -2.8 0 -5 -10 -15 -20 -25 -30
VDS - Volts VDS - Volts

Fig. 4. RDS(on) Normalized to ID = - 22A Value vs.

Fig. 3. Output Characteristics @ T J = 125ºC Junction Temperature
-44 2.2
VGS = -10V
- 8V 2.0 VGS = -10V
-36 - 7V
1.8
- 6V I D = - 44A
R DS(on) - Normalized
ID - Amperes

1.6
-28 I D = -22A
1.4
- 5V
-20 1.2

1.0
-12
0.8

-4 0.6

0.4
0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 -4.5 -5 -50 -25 0 25 50 75 100 125 150
VDS - Volts TJ - Degrees Centigrade

Fig. 5. RDS(on) Normalized to ID = - 22A Value vs. Fig. 6. Maximum Drain Current vs.
Drain Current Case Temperature
2.2 -50

VGS = -10V TJ = 125ºC

2.0
-40

1.8
R DS(on) - Normalized

ID - Amperes

-30
1.6

1.4
-20

1.2
TJ = 25ºC -10
1.0

0.8 0
0 -20 -40 -60 -80 -100 -120 -140 -50 -25 0 25 50 75 100 125 150
ID - Amperes TC - Degrees Centigrade

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
 IXTA44P15T IXTP44P15T
IXTQ44P15T IXTH44P15T

Fig. 7. Input Admittance Fig. 8. Transconductance

-50 70
TJ = - 40ºC
60
TJ = 125ºC
-40
25ºC 25ºC
- 40ºC 50
125ºC
ID - Amperes

g f s - Siemens
-30
40

30
-20

20
-10
10

0 0
-3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50
VGS - Volts ID - Amperes

Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge
-140 -10

-9 VDS = - 75V
-120 I D = - 22A
-8
I G = -1mA
-100 -7
IS - Amperes

-6
VGS - Volts

-80
-5
-60
TJ = 125ºC -4

-40 -3
TJ = 25ºC
-2
-20
-1

0 0
-0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 0 20 40 60 80 100 120 140 160 180
VSD - Volts QG - NanoCoulombs

Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area

100,000 - 1000

f = 1 MHz
RDS(on) Limit
Capacitance - PicoFarads

- 100 25µs
10,000 100µs
Ciss
ID - Amperes

- 10 1ms

Coss
1,000 10ms
-1 100ms
TJ = 150ºC
Crss DC
TC = 25ºC
Single Pulse

100 - 0.1
0 -5 -10 -15 -20 -25 -30 -35 -40 -1 -10 - 100 - 1000
VDS - Volts VDS - Volts

© 2013 IXYS CORPORATION, All Rights Reserved

 IXTA44P15T IXTP44P15T
IXTQ44P15T IXTH44P15T
Fig. 13. Resistive Turn-on Rise Time vs. Fig. 14. Resistive Turn-on Rise Time vs.
Junction Temperature Drain Current
50 48

46 RG = 1Ω, VGS = -10V 44

VDS = - 75V
42
40
t r - Nanoseconds

t r - Nanoseconds
TJ = 25ºC
38 RG = 1Ω, VGS = -10V
36 VDS = - 75V
I D = - 22A
34
32
30
I D = - 44A
28
26
TJ = 125ºC

22 24

18 20
25 35 45 55 65 75 85 95 105 115 125 -22 -24 -26 -28 -30 -32 -34 -36 -38 -40 -42 -44
TJ - Degrees Centigrade ID - Amperes

Fig. 15. Resistive Turn-on Switching Times vs. Fig. 16. Resistive Turn-off Switching Times vs.
Gate Resistance Junction Temperature
250 100 20 65

tr td(on) - - - - tf td(off) - - - -
TJ = 125ºC, VGS = -10V
200 80 19 RG = 1Ω, VGS = -10V 60
VDS = - 75V
VDS = - 75V
t d(on) - Nanoseconds

t d(off) - Nanoseconds
t f - Nanoseconds
t r - Nanoseconds

150 60 18 55
I D = - 44A, - 22A
I D = - 22A

100 40 17 50

I D = - 44A

50 20 16 45

0 0 15 40
0 2 4 6 8 10 12 14 16 18 20 25 35 45 55 65 75 85 95 105 115 125

RG - Ohms TJ - Degrees Centigrade

Fig. 17. Resistive Turn-off Switching Times vs. Fig. 18. Resistive Turn-off Switching Times vs.
Drain Current Gate Resistance
19 65 180 300

160 tf td(off) - - - - 270

TJ = 125ºC
TJ = 125ºC, VGS = -10V
18 60
140 VDS = - 75V 240
t d(off) - Nanoseconds

TJ = 125ºC
t d(off) - Nanoseconds

120 I D = - 22A 210

t f - Nanoseconds
t f - Nanoseconds

17 55
100 180
TJ = 25ºC
80 150
16 50
I D = - 44A
60 120

15 tf td(off) - - - - 45 40 90
TJ = 25ºC
RG = 1Ω, VGS = -10V
20 60
VDS = - 75V
14 40 0 30
-22 -24 -26 -28 -30 -32 -34 -36 -38 -40 -42 -44 0 2 4 6 8 10 12 14 16 18 20
ID - Amperes RG - Ohms

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
 IXTA44P15T IXTP44P15T
IXTQ44P15T IXTH44P15T

Fig. 19. Maximum Transient Thermal Impedance

1

0.1
Z (th)JC - ºC / W

0.01

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds

© 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: T_44P15T(A6)11-05-10-A

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