MITSUBISHI IGBT MODULES

CM150DU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE

CM150DU-12H

● IC ................................................................... 150A
● VCES .......................................................... 600V
● Insulated Type
● 2-elements in a pack

APPLICATION
UPS, NC machine, AC-Drive control, Servo, Welders

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

TC measured point
94
7 80 ±0.25 2–φ6.5
17 23 23 MOUNTING HOLES 4
4 11
CM

C2E1 E2 C1
E2 G2
24

18
13
48

G1E1

12 13.5
3–M5NUTS
12mm deep
E2 G2

TAB #110. t=0.5

16 2.5 25 2.5 16
7.5

C2E1 E2 C1
30 –0.5

G1 E1
+1

21.2

LABEL
CIRCUIT DIAGRAM

Feb. 2009

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 MITSUBISHI IGBT MODULES

CM150DU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE

MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)

Symbol Item Conditions Ratings Unit

VCES Collector-emitter voltage VGE = 0V 600 V
VGES Gate-emitter voltage VCE = 0V ±20 V
IC TC = 25°C 150 A
Collector current
ICM Pulse (Note 1) 300 A
IE (Note 2) TC = 25°C 150 A
Emitter current
IEM (Note 2) Pulse (Note 1) 300 A
PC (Note 3) Maximum collector dissipation TC = 25°C 600 W
Tj Junction temperature — –40 ~ +150 °C
Tstg Storage temperature — –40 ~ +125 °C
Viso Isolation voltage Charged part to base plate, f = 60Hz, AC 1 minute 2500 Vrms
Main terminals M5 screw 2.5 ~ 3.5 N·m
— Mounting torque
Mounting M6 screw 3.5 ~ 4.5 N·m
— Weight Typical value 310 g

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Limits
Symbol Item Test Conditions Unit
Min Typ Max
ICES Collector cutoff current VCE = VCES, VGE = 0V — — 1 mA
Gate-emitter
VGE(th) IC = 15mA, VCE = 10V 4.5 6 7.5 V
threshold voltage
IGES Gate-leakage current ±VGE = VGES, VCE = 0V — — 0.5 µA
Collector-emitter Tj = 25°C — 2.4 3.0
VCE(sat) IC = 150A, VGE = 15V (Note 4) V
saturation voltage Tj = 125°C — 2.6 —
Cies Input capacitance — — 13.2 nF
VCE = 10V
Coes Output capacitance — — 7.2 nF
VGE = 0V
Cres Reverse transfer capacitance — — 2 nF
QG Total gate charge VCC = 300V, IC = 150A, VGE = 15V — 300 — nC
td (on) Turn-on delay time VCC = 300V, IC = 150A — — 100 ns
tr Turn-on rise time VGE = ±15V — — 350 ns
td (off) Turn-off delay time RG = 4.2Ω — — 300 ns
tf Turn-off fall time Resistive load — — 300 ns
V EC(Note 2) Emitter-collector voltage IE = 150A, VGE = 0V — — 2.6 V
t rr (Note 2) Reverse recovery time IE = 150A, — — 160 ns
Q rr (Note 2) Reverse recovery charge die / dt = –300A / µs — 0.36 — µC
Rth(j-c)Q Junction to case, IGBT part (Per 1/2 module) — — 0.21 K/W
Thermal resistance (Note 5)
Rth(j-c)R Junction to case, FWDi part (Per 1/2 module) — — 0.47 K/W
Case to heat sink, conductive grease applied
Rth(c-f) Contact thermal resistance — 0.07 — K/W
(Per 1/2 module) (Note 6)
Note 1. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Case temperature (TC) measured point is shown in page OUTLINE DRAWING.
6. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].

Feb. 2009

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 MITSUBISHI IGBT MODULES

CM150DU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS TRANSFER CHARACTERISTICS
(TYPICAL) (TYPICAL)
300 300
VGE=20 14 VCE = 10V
(V) 13
COLLECTOR CURRENT IC (A)

COLLECTOR CURRENT IC (A)

250 250
Tj=25°C
15 12
200 200

150 11 150

100 10 100

50 9 50
Tj = 25°C
8 Tj = 125°C
0 0
0 2 4 6 8 10 0 4 8 12 16 20

COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V)

COLLECTOR-EMITTER SATURATION COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL)
5 10
SATURATION VOLTAGE VCE(sat) (V)

VGE = 15V
SATURATION VOLTAGE VCE(sat) (V)

Tj = 25°C
Tj = 25°C
4 Tj = 125°C 8
COLLECTOR-EMITTER

COLLECTOR-EMITTER

3 6

IC = 300A
2 4

IC = 150A
1 2
IC = 60A

0 0
0 40 80 120 160 200 240 280 300 0 4 8 12 16 20

COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V)

FREE-WHEEL DIODE
FORWARD CHARACTERISTICS CAPACITANCE CHARACTERISTICS
(TYPICAL) (TYPICAL)
102 102
Tj = 25°C 7
CAPACITANCE Cies, Coes, Cres (nF)

7 5
5
EMITTER CURRENT IE (A)

3
2
3
2 101
7 Cies
5
101 3
7 2
5 100 Coes
7
3 5
2 3
2 Cres
VGE = 0V
100 10–1 –1
1.0 1.4 1.8 2.2 2.6 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102

EMITTER-COLLECTOR VOLTAGE VEC (V) COLLECTOR-EMITTER VOLTAGE VCE (V)

Feb. 2009

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 MITSUBISHI IGBT MODULES

CM150DU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE

HALF-BRIDGE REVERSE RECOVERY CHARACTERISTICS

SWITCHING TIME CHARACTERISTICS OF FREE-WHEEL DIODE
(TYPICAL) (TYPICAL)

REVERSE RECOVERY CURRENT Irr (A)

7 103 102
–di/dt = 300A/µs
5 Tj = 125°C

REVERSE RECOVERY TIME trr (ns)

tf 7 7
Tj = 25°C
5 5
3
SWITCHING TIMES (ns)

2 td(off) 3 3
2 2
102
trr
7 102 101
5 7 7
td(on) lrr
5 5
3
2 tr 3 3
VCC = 300V 2 2
VGE = ±15V
101
RG = 4.2Ω
7 101 1 100
101 2 3 5 7 102 2 3 5 7 103 10 2 3 5 7 102 2 3 5 7 103

COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A)

TRANSIENT THERMAL TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS IMPEDANCE CHARACTERISTICS
(IGBT part) (FWDi part)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
101 101
7 Single Pulse 7 Single Pulse
5 5
THERMAL IMPEDANCE Zth(j – c)

THERMAL IMPEDANCE Zth(j – c)

3 TC = 25°C 3 TC = 25°C
NORMALIZED TRANSIENT

NORMALIZED TRANSIENT

2 2
Per unit base = Rth(j – c) = 0.21K/W Per unit base = Rth(j – c) = 0.47K/W
100 100
7 7
5 5
3 3 3 3
2 2 2 2
10–1 10–1 10–1 10–1
7 7 7 7
5 5 5 5
3 3 3 3
2 2 2 2
10–2 10–2 10–2 10–2
7 7 7 7
5 5 5 5
3 3 3 3
2 2 2 2
10–3 10–3 10–3 10–3
10–5 2 3 5 710–4 2 3 5 7 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3

TIME (s) TIME (s)

GATE CHARGE CHARACTERISTICS

(TYPICAL)
20
IC = 150A
GATE-EMITTER VOLTAGE VGE (V)

15
VCC = 200V

VCC = 300V
10

0
0 100 200 300 400

GATE CHARGE QG (nC)

Feb. 2009